WO1999063589A1 - Pad grid array and a method for producing such a pad grid array - Google Patents

Pad grid array and a method for producing such a pad grid array Download PDF

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Publication number
WO1999063589A1
WO1999063589A1 PCT/EP1999/003801 EP9903801W WO9963589A1 WO 1999063589 A1 WO1999063589 A1 WO 1999063589A1 EP 9903801 W EP9903801 W EP 9903801W WO 9963589 A1 WO9963589 A1 WO 9963589A1
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WO
WIPO (PCT)
Prior art keywords
grid array
conductor
connection pads
substrate
solder
Prior art date
Application number
PCT/EP1999/003801
Other languages
German (de)
French (fr)
Inventor
Rolf Aschenbrenner
Joachim KLÖSER
Erik Jung
Luc Boone
Marcel Heerman
Jozef Van Puymbroeck
Original Assignee
Siemens S.A.
De Steur, Hubert
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens S.A., De Steur, Hubert filed Critical Siemens S.A.
Publication of WO1999063589A1 publication Critical patent/WO1999063589A1/en

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/12Mountings, e.g. non-detachable insulating substrates
    • H01L23/13Mountings, e.g. non-detachable insulating substrates characterised by the shape
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/40Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/4007Surface contacts, e.g. bumps
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03Conductive materials
    • H05K2201/0332Structure of the conductor
    • H05K2201/0364Conductor shape
    • H05K2201/0367Metallic bump or raised conductor not used as solder bump
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09Shape and layout
    • H05K2201/09009Substrate related
    • H05K2201/09045Locally raised area or protrusion of insulating substrate
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09Shape and layout
    • H05K2201/09009Substrate related
    • H05K2201/09118Moulded substrate
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/02Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/027Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed by irradiation, e.g. by photons, alpha or beta particles

Definitions

  • Integrated circuits are getting more and more connections and are being miniaturized more and more.
  • the difficulties with solder paste application and assembly expected with this increasing miniaturization are to be remedied by new housing shapes, whereby single, Few or multi-chip modules in the Ball Grid Array Package should be emphasized (DE-Z produc- tronic 5, 1994, pages 54, 55).
  • These modules are based on a plated-through substrate on which the chips are contacted, for example, via contact wires or by means of flip chip assembly.
  • BGA Ball Grid Array
  • Solder Grid Array or a Solder Bump Array.
  • the ball grid array comprises solder bumps arranged flat on the underside of the substrate, which allow surface mounting on the printed circuit boards or assemblies. Due to the flat arrangement of the solder bumps, large numbers of connections can be realized in a coarse grid of, for example, 1.27 mm.
  • MID Molded Interconnection Devices
  • injection molded parts with integrated conductor tracks are used instead of conventional printed circuits.
  • High-quality thermoplastics that are suitable for injection molding three-dimensional substrates are the basis of this technology.
  • Thermoplastics of this type are distinguished from conventional substrate materials for printed circuits by better mechanical, chemical, electrical and environmental properties.
  • SIL injection molded parts with integrated conductor tracks
  • the structuring takes place tion of a metal layer applied to the injection molded parts without the usual masking technique by means of a special laser structuring process.
  • Several mechanical and electrical functions can be integrated into the three-dimensional injection molded parts with structured metallization.
  • the housing support functions simultaneously take over guides and snap connections, while the metallization layer also serves as an electromagnetic shield in addition to the wiring and connection function and ensures good heat dissipation.
  • the metallization layer also serves as an electromagnetic shield in addition to the wiring and connection function and ensures good heat dissipation.
  • a chip housing is known from WO-A-89/10005, the carrier body of which consists of a plastic and is provided on its underside with four ribs which are arranged and integrally molded on the edge.
  • the actual wiring here consists of a flexible circuit, which is applied to the top or the bottom of the carrier body and wound around the ribs on the edge, corresponding external connections being formed in the apex region of the ribs.
  • the flexible wiring carries one or more IC chips, which are then arranged on the top or the bottom of the carrier body, depending on the embodiment.
  • a single-chip module is known from WO-A-89/00346, in which the injection-molded, three-dimensional sub- strat bumps formed from an electrically insulating polymer on the underside of the substrate during injection molding, which can optionally also be arranged flat.
  • An IC chip is arranged on the upper side of this substrate, the connections of which are connected via fine bond wires to conductor tracks formed on the upper side of the substrate. These conductor tracks are in turn connected via plated-through holes to associated external connections formed on the bumps.
  • PSGA polymer stud grid array
  • the new one for single, Few - or multi-chip modules suitable design includes - an injection molded, three-dimensional substrate made of an electrically insulating polymer, polymer bumps arranged flat on the underside of the substrate and molded during injection molding, on the polymer bumps formed by a solderable end surface, at least on the outer connections Conductors formed on the underside of the substrate, which connect the external connections to internal connections, and at least one chip arranged on the substrate, the connections of which are electrically conductively connected to the internal connections.
  • the production of the external connections on the polymer bumps can also be carried out with minimal effort together with the production which is customary for MID technology or SIL technology the conductors are made. Thanks to the laser fine structuring preferred for SIL technology, the external connections on the polymer bumps with high numbers of connections can be realized in a fine grid. At the current state of injection molding technology, however, a grid of 0.8 mm and a diameter of the polymer bumps of 0.3 mm must be regarded as the lower limit, since with further miniaturization the injection mold in the area of the polymer bumps can no longer be safely filled with plastic.
  • the invention specified in claims 1 and 11 is based on the problem of creating a new housing shape which on the one hand has the advantages of the polymer stud grid array (PSGA) and on the other hand further miniaturization with a grid of connection pads of less than 0, 8 mm allows.
  • PSGA polymer stud grid array
  • the invention is based on the knowledge that a substrate with elongated waves compared to
  • Polymer Stud Grid Array (PSGA) substrate can be realized in a much finer geometry.
  • the areas of the injection mold corresponding to the shafts can be filled with plastic much more easily than the areas of an injection mold corresponding to the polymer bumps.
  • the injection mold suitable for producing a corrugated substrate can be produced much more simply and cost-effectively than the injection mold required for producing a substrate of a polymer stud grid array.
  • the formation of the conductor pattern with the connection pads on the corrugated underside of the substrate can easily be carried out by laser structuring in the required fineness. If the apex areas of the waves are seen in the longitudinal direction of the waves with the connection pads of the conductor pattern, then pad grid arrays can be realized with a fine grid of, for example, 250 ⁇ m.
  • Claim 2 relates to the remodeling of the pad grid array to a solder grid array. Since the required distance between the new housing shape and a printed circuit board is already ensured by the waves, the solder bumps have the sole task of electrically connecting the connection pads to the assigned connections of the printed circuit board. According to claim 3, tin-lead alloys are particularly suitable for such solder connections.
  • the embodiment according to claim 4 facilitates the formation of the solder bumps by remelting an electrolytically applied solder layer, since the conductor areas, which are reduced in width, prevent the liquid solder from flowing off via the conductor tracks.
  • the reduced-width conductor areas can be formed according to claims 5 and 6 in a simple manner by constricting the conductor tracks or through holes made in the central area of the conductor tracks.
  • the geometry of the connection pads and the conductor regions reduced in width enables an optimal formation of the solder bumps by remelting the electrolytically applied solder layer.
  • Claim 8 provides preferred grid dimensions of the connection pads which are matched to a substrate provided with waves.
  • the embodiment of the method according to the invention for producing a pad grid array according to claim 12 enables a particularly simple formation of solder bumps on the connection pads by remelting electrolytically applied solder layers. This remelting can be carried out quickly and selectively with the aid of a laser beam.
  • FIG. 1 shows a perspective illustration of an injection-molded substrate provided with waves
  • FIG. 2 to FIG. 5 shows different process stages in the production of a pad grid array provided with solder bumps on the substrate according to FIG. 1,
  • FIG. 6 shows a first possibility for realizing the connection pads and their connection to the further conductor tracks
  • FIG. 7 shows a second possibility for the implementation of the connection pads and their connection with the further conductor lines and
  • FIG. 8 shows a comparison of the waveforms of a pad grid array suitable for flip-chip mounting and a pad grid array suitable for surface mounting.
  • FIG. 1 shows a perspective illustration of an electrically insulating substrate S1, which is provided on its underside, which faces upwards in the drawing, with a multiplicity of raised waves W1 running parallel to one another.
  • the waves Wl are formed by integrally molded ribs of the substrate S1 produced by injection molding.
  • High-temperature resistant thermoplastics such as polyetherimide, polyether sulfone or liquid crystalline polymers, are suitable as substrate materials.
  • a pad grid array is to be formed on the underside of the substrate shown in FIG. 1, the connection pads of which should lie in the apex region of the waves W1 at the locations marked with stars.
  • the grid of the connection pads indicated by the stars can be realized, for example, in dimensions between 250 ⁇ m and 500 ⁇ m.
  • the substrate S1 shown in cross section in FIG. 2 is first metallized over the entire surface by chemical copper deposition, whereupon the desired conductor pattern including the connection pads is produced by laser structuring on the underside of the substrate S1.
  • an Nd: YAG laser with a wavelength of 1.06 ⁇ m is used for this laser structuring.
  • the chemically deposited copper layer is then strengthened by the electrolytic deposition of copper to complete the conductor pattern.
  • the electrolytic metal deposition on the conductor pattern is achieved, for example, by cathodic contacting in the Drawing, not shown, enables the collecting line, which connects all conductive areas of the conductor pattern to one another and is later separated, for example with the aid of a laser beam.
  • the conductor pattern shown in FIG. 3 comprises the connection pads P1 located in the apex regions of the waves W1 and the conductor lines LZ leading away from them, as well as further structures which are evident, for example, from FIGS. 7 and 8, which will be explained later.
  • solder layer LO is then applied to the conductor pattern by electrolytic deposition.
  • the solder layer LO is a tin-lead alloy which is deposited in a thickness between 15 ⁇ m and 50 ⁇ m.
  • the electrodeposited solder is remelted by heating to a temperature above the melting point, the solder bumps LH1 shown in FIG. 5 forming automatically due to the surface tension of the liquid solder on the connection pads P1.
  • the remelting is carried out with the aid of a laser beam indicated by an arrow LST in FIG. 5 and is selectively limited to the connection pads P1 and their closer surroundings, which are yet to be explained with reference to FIGS. 7 and 8.
  • This laser remelting which in comparison to known remelting processes only requires a minimal temperature load on the substrate S1, is again carried out, for example, with the aid of an Nd.YAG laser with a wavelength of 1.06 ⁇ m.
  • FIG. 6 shows a first possibility for the formation of the connection pads P1 and their immediate surroundings.
  • the geometry is shown as a development of the conductor pattern.
  • the connection between the connection Pads Pl and the further conductor tracks LZ are made via constricted conductor areas LB1, which have a width between 10 ⁇ m and 40 ⁇ m and a length between 100 ⁇ m and 500 ⁇ m with dimensions of the connection pads Pl between I00xl00 ⁇ m 2 and 250x250 ⁇ m 2 .
  • These constricted conductor areas LB1 prevent the liquid solder from flowing off via the conductor tracks LZ when the electrolytically applied solder layer LO (see FIG. 6) melts.
  • the solder layer LO on the conductor areas LB1 creates an additional solder volume for the
  • solder bump LH1 Formation of the solder bump LH1 (see FIG. 5) is provided.
  • a further increase in the volume of the solder bumps LH1 (cf. FIG. 5) can be brought about in a comparable manner by means of the solder feed structures LS shown in dash-dot lines in FIG. 7, which lead away from the individual connection pads P1.
  • solder feed structures LS like the conductor areas LB1, have a width between 10 ⁇ m and 40 ⁇ m and a length between 100 ⁇ m and 500 ⁇ m.
  • solder supply structures LS leading away from the individual connection pads Pl can be connected to the collecting line mentioned earlier, which is cathodically contacted to the conductor pattern during electrolytic metal deposition and is later separated from the rest of the conductor pattern.
  • solder bumps LH1 are formed by remelting the solder layer LO with the aid of a laser beam LST (cf. FIGS. 4 and 5)
  • the laser beam LST which is out of focus, is in each case selectively via the connection pad P1, the conductor region LB1 and possibly via the solder feed structures LS rastered. Since scanning can be carried out in less than 0.1 seconds, remelting takes place practically simultaneously.
  • FIG. 7 shows a second possibility for the formation of the connection pads designated here with P10 and their immediate surroundings.
  • connection area between connection pad P10 and a further line hole LZ is inserted in the middle of the This results in width-reduced conductor areas LB2 on both sides of the hole L.
  • Additional solder supply structures LS are again indicated in FIG. 8 by dash-dotted lines.
  • FIG. 8 shows a comparison between waves W3 suitable for flip-chip mounting and the much higher waves W4 suitable for surface mounting. This is a theoretical comparison, since with a pad grid array all connection pads must lie in one plane and all waves of a substrate must always be the same height.
  • the waves formed on the underside of a substrate can also have shapes other than those shown in the drawing and can, for example, be concentric with one another.
  • the waves do not have to have a constant height when viewed in the longitudinal direction. Seen in the longitudinal direction, for example, the waves could each have indentations or notches between two connection pads. This measure further increases the elasticity of the connection pads on the shafts, i.e. Mechanical stresses caused by temperature fluctuations or the like can be avoided even better.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)

Abstract

According to the invention, an electrically insulating substrate (S1) is provided with a plurality of longitudinally extended, elevated waves (W1) on the underside thereof. The conductor pattern is applied on the underside of the substrate by means of laser structuring such that the terminal pads (P1) are arranged in a flat manner in the grid array, and each is situated in the crest area of a wave. The inventive pad grid array can be produced with a fine grid of, for example, 250 νm.

Description

Beschreibungdescription
Pad Grid Array und Verfahren zur Herstellung eines derartigen Pad Grid ArraysPad grid array and method for producing such a pad grid array
Integrierte Schaltkreise bekommen immer höhere Anschlußzahlen und werden dabei immer weiter miniaturisiert. Die bei dieser zunehmenden Miniaturisierung erwarteten Schwierigkeiten mit Lotpastenauftrag und Bestückung sol- len durch neue Gehäuseformen behoben werden, wobei hier insbesondere Single-, Few- oder Multi-Chip-Module im Ball Grid Array Package hervorzuheben sind (DE-Z produc- tronic 5, 1994, Seiten 54, 55) . Diese Module basieren auf einem durchkontaktierten Substrat, auf welchem die Chips beispielsweise über Kontaktierdrähte oder mittels Flipchip-Montage kontaktiert sind. An der Unterseite des Substrats befindet sich das Ball Grid Array (BGA) , das häufig auch als Solder Grid Array oder Solder Bump Array bezeichnet wird. Das Ball Grid Array umfaßt auf der Un- terseite des Substrats flächig angeordnete Lothöcker, die eine Oberflächenmontage auf den Leiterplatten oder Baugruppen ermöglichen. Durch die flächige Anordnung der Lothöcker können hohe Anschlußzahlen in einem groben Raster von beispielsweise 1,27 mm realisiert werden.Integrated circuits are getting more and more connections and are being miniaturized more and more. The difficulties with solder paste application and assembly expected with this increasing miniaturization are to be remedied by new housing shapes, whereby single, Few or multi-chip modules in the Ball Grid Array Package should be emphasized (DE-Z produc- tronic 5, 1994, pages 54, 55). These modules are based on a plated-through substrate on which the chips are contacted, for example, via contact wires or by means of flip chip assembly. On the underside of the substrate is the Ball Grid Array (BGA), which is often referred to as a Solder Grid Array or a Solder Bump Array. The ball grid array comprises solder bumps arranged flat on the underside of the substrate, which allow surface mounting on the printed circuit boards or assemblies. Due to the flat arrangement of the solder bumps, large numbers of connections can be realized in a coarse grid of, for example, 1.27 mm.
Bei der sog. MID-Technologie (MID = Moulded Interconnec- tion Devices) werden anstelle konventioneller gedruckter Schaltungen Spritzgießteile mit integrierten Leiterzügen verwendet. Hochwertige Thermoplaste, die sich zum Spritzgießen von dreidimensionalen Substraten eignen, sind die Basis dieser Technologie. Derartige Thermoplaste zeichnen sich gegenüber herkömmlichen Substratmaterialien für gedruckte Schaltungen durch bessere mechanische, chemische, elektrische und umwelttechnische Ei- genschaften aus. Bei einer speziellen Richtung der MID- Technologie, der sog. SIL-Technik (SIL = Spitzgießteile mit integrierten Leiterzügen) , erfolgt die Strukturie- rung einer auf die Spritzgießteile aufgebrachten Metallschicht unter Verzicht auf die sonst übliche Maskentechnik durch ein spezielles Laserstrukturierungsverfahren. In die dreidimensionalen Spritzgießteile mit struktu- rierter Metallisierung sind dabei mehrere mechanische und elektrische Funktionen integrierbar. Die Gehäuseträgerfunktionen übernimmt gleichzeitig Führungen und Schnappverbindungen, während die Metallisierungsschicht neben der Verdrahtungs-und Verbindungsfunktion auch als elektromagnetische Abschirmung dient und für eine gute Wärmeabfuhr sorgt. Zur Herstellung von elektrisch leitenden Querverbindungen zwischen zwei Verdrahtungsanlagen auf einander gegenüberliegenden Oberflächen der Spritzgußteile werden bereits beim Spritzgießen entspre- chende Durchkontaktierungslöcher erzeugt. Die Innenwandungen dieser Durchkontaktierungslöcher werden dann beim Metallsisieren der Spritzgießteile ebenfalls mit einer Metallschicht überzogen. Weitere Einzelheiten zur Herstellung von dreidimensionalen Spritzgießteilen mit in- tegrierten Leiterzügen gehen beispielsweise aus der DE- A-37 32 249 oder der EP-A-0 361 192 hervor.With the so-called MID technology (MID = Molded Interconnection Devices), injection molded parts with integrated conductor tracks are used instead of conventional printed circuits. High-quality thermoplastics that are suitable for injection molding three-dimensional substrates are the basis of this technology. Thermoplastics of this type are distinguished from conventional substrate materials for printed circuits by better mechanical, chemical, electrical and environmental properties. With a special direction of MID technology, the so-called SIL technology (SIL = injection molded parts with integrated conductor tracks), the structuring takes place tion of a metal layer applied to the injection molded parts without the usual masking technique by means of a special laser structuring process. Several mechanical and electrical functions can be integrated into the three-dimensional injection molded parts with structured metallization. The housing support functions simultaneously take over guides and snap connections, while the metallization layer also serves as an electromagnetic shield in addition to the wiring and connection function and ensures good heat dissipation. For the production of electrically conductive cross connections between two wiring systems on opposite surfaces of the injection molded parts, corresponding through holes are already produced during injection molding. The inner walls of these via holes are then also coated with a metal layer when the injection molded parts are metallized. Further details on the production of three-dimensional injection molded parts with integrated conductor tracks can be found, for example, in DE-A-37 32 249 or EP-A-0 361 192.
Aus der WO-A-89/10005 ist ein Chipgehäuse bekannt, dessen aus einem Kunststoff bestehender Trägerkörper auf seiner Unterseite mit vier randseitig angeordneten und integral angformten Rippen versehen ist. Die eigentliche Verdrahtung besteht hier aus einer flexiblen Schaltung, die auf die Oberseite oder die Unterseite des Trägerkörpers aufgebracht und um die randseitigen Rippen gewunden wird, wobei im Scheitelbereich der Rippen entsprechende Außenanschlüsse gebildet werden. Die flexible Verdrahtung trägt einen oder mehrere IC-Chips, die dann je nach Ausführunsform auf der Oberseite oder der Unterseite des Trägerkörpers angeordnet sind.A chip housing is known from WO-A-89/10005, the carrier body of which consists of a plastic and is provided on its underside with four ribs which are arranged and integrally molded on the edge. The actual wiring here consists of a flexible circuit, which is applied to the top or the bottom of the carrier body and wound around the ribs on the edge, corresponding external connections being formed in the apex region of the ribs. The flexible wiring carries one or more IC chips, which are then arranged on the top or the bottom of the carrier body, depending on the embodiment.
Aus der WO-A-89/00346 ist ein Single-Chip-Modul bekannt, bei welchem das spritzgegossene, dreidimensionale Sub- strat aus einem elektrisch isolierenden Polymer auf der Unterseite des Substrats beim Spritzgießen mitgeformte Höcker trägt, die ggf. auch flächig angeordnet sein können. Auf der Oberseite dieses Substrats ist ein IC-Chip angeordnet, dessen Anschlüsse über feine Bonddrähte mit auf der Oberseite des Substrats ausgebildeten Leiterbahnen verbunden sind. Diese Leiterbahnen sind ihrerseits über Durchkontaktierungen mit zugeordneten , auf den Höckern gebildeten Außenanschlüssen verbunden.A single-chip module is known from WO-A-89/00346, in which the injection-molded, three-dimensional sub- strat bumps formed from an electrically insulating polymer on the underside of the substrate during injection molding, which can optionally also be arranged flat. An IC chip is arranged on the upper side of this substrate, the connections of which are connected via fine bond wires to conductor tracks formed on the upper side of the substrate. These conductor tracks are in turn connected via plated-through holes to associated external connections formed on the bumps.
Aus der WO-A-96/096 46 ist ein sog. Polymer Stud Grid Array (PSGA) bekannt, welches die Vorteile eines Ball Grid Arrays (BGA) mit den Vorteilen der MID-Technologie vereinigt. Die Bezeichnung der neuen Bauform als Polymer Stud Grid Array (PSGA) erfolgte dabei in Anlehnung an das Ball Grid Array (BGA) , wobei der Begriff „Polymer Stud" auf beim Spritzgießen des Substrats mitgeformte Polymerhöcker hinweisen soll. Die neue für Single-, Few- oder Multi-Chip-Module geeignete Bauform umfaßt - ein spritzgegossenes, dreidimensionales Substrat aus einem elektrisch isolierenden Polymer, auf der Unterseite des Substrats flächig angeordnete und beim Spritzgießen mitgeformte Polymerhöcker, auf den Polymerhöckern durch eine lötbare Endober- fläche gebildete Außenanschlüsse, zumindest auf der Unterseite des Substrats ausgebildete Leiterzüge, die die Außenanschlüsse mit Innenanschlüssen verbinden, und mindestens einen auf dem Substrat angeordneten Chip, dessen Anschlüsse mit den Innenanschlüssen elektrisch leitend verbunden sind.A so-called polymer stud grid array (PSGA) is known from WO-A-96/096 46, which combines the advantages of a ball grid array (BGA) with the advantages of MID technology. The designation of the new design as the Polymer Stud Grid Array (PSGA) was based on the Ball Grid Array (BGA), the term "polymer stud" referring to polymer bumps molded during injection molding of the substrate. The new one for single, Few - or multi-chip modules suitable design includes - an injection molded, three-dimensional substrate made of an electrically insulating polymer, polymer bumps arranged flat on the underside of the substrate and molded during injection molding, on the polymer bumps formed by a solderable end surface, at least on the outer connections Conductors formed on the underside of the substrate, which connect the external connections to internal connections, and at least one chip arranged on the substrate, the connections of which are electrically conductively connected to the internal connections.
Neben der einfachen und kostengünstigen Herstellung der Polymerhöcker beim Spritzgießen des Substrats kann auch die Herstellung der Außenanschlüsse auf den Polymerhök- kern mit minimalem Aufwand zusammen mit der bei der MID- Technologie bzw. der SIL-Technik üblichen Herstellung der Leiterzüge vorgenommen werden. Durch die bei der SIL-Technik bevorzugte Laserfeinstrukturierung können die Außenanschlüsse auf den Polymerhöckern mit hohen Anschlußzahlen in einem feinen Raster realisiert werden. Beim derzeitgen Stand der Spritzgießtechnik müssen jedoch ein Raster von 0,8 mm und ein Durchmesser der Polymerhöcker von 0,3 mm als untere Grenze angesehen werden, da bei einer weiteren Miniaturisierung die Spritzgießform im Bereich der Polymerhöcker nicht mehr sicher mit Kunststoff gefüllt werden kann.In addition to the simple and inexpensive production of the polymer bumps when the substrate is injection molded, the production of the external connections on the polymer bumps can also be carried out with minimal effort together with the production which is customary for MID technology or SIL technology the conductors are made. Thanks to the laser fine structuring preferred for SIL technology, the external connections on the polymer bumps with high numbers of connections can be realized in a fine grid. At the current state of injection molding technology, however, a grid of 0.8 mm and a diameter of the polymer bumps of 0.3 mm must be regarded as the lower limit, since with further miniaturization the injection mold in the area of the polymer bumps can no longer be safely filled with plastic.
Der in den Ansprüchen 1 und 11 angegebnen Erfindung liegt das Problem zugrunde, eine neue Gehäuseform zu schaffen, welche einerseits die Vorteile des Polymer Stud Grid Arrays (PSGA) aufweist und andererseits eine weitere Miniaturisierung mit einem Raster der Anschluß- Pads von weniger als 0,8 mm ermöglicht.The invention specified in claims 1 and 11 is based on the problem of creating a new housing shape which on the one hand has the advantages of the polymer stud grid array (PSGA) and on the other hand further miniaturization with a grid of connection pads of less than 0, 8 mm allows.
Der Erfindung liegt die Erkenntnis zugrunde, daß ein Substrat mit langgestreckten Wellen im Vergleich zumThe invention is based on the knowledge that a substrate with elongated waves compared to
Substrat eines Polymer Stud Grid Arrays (PSGA) in einer wesentlich feineren Geometrie realisiert werden kann. So können beim Spritzgießen eines Substrats die den Wellen entsprechenden Bereiche der Spritzgießform wesentlich leichter mit Kunststoff gefüllt werden, als die den Polymerhöckern entsprechenden Bereiche einer Spritzgießform. Hervorzuheben ist ferner, daß die zur Herstellung eines wellenförmigen Substrats geeignete Spritzgießform wesentlich einfacher und kostengünstiger erstellt werden kann, als die zur Herstellung eines Substrats eines Polymer Stud Grid Arrays erforderliche Spritzgießform. Die Bildung des Leitermusters mit den Anschluß-Pads auf der gewellten Unterseite des Substrats kann durch Laser- strukturierung in der erforderlichen Feinheit problemlos vorgenommen werden. Werden die Scheitelbereiche der Wellen in Längsrichtung der Wellen gesehen mit den Anschluß-Pads des Leitermusters belegt, so können Pad Grid Arrays mit einem feinen Raster von beispielsweise 250 μm realisiert werden.Polymer Stud Grid Array (PSGA) substrate can be realized in a much finer geometry. When injection molding a substrate, the areas of the injection mold corresponding to the shafts can be filled with plastic much more easily than the areas of an injection mold corresponding to the polymer bumps. It should also be emphasized that the injection mold suitable for producing a corrugated substrate can be produced much more simply and cost-effectively than the injection mold required for producing a substrate of a polymer stud grid array. The formation of the conductor pattern with the connection pads on the corrugated underside of the substrate can easily be carried out by laser structuring in the required fineness. If the apex areas of the waves are seen in the longitudinal direction of the waves with the connection pads of the conductor pattern, then pad grid arrays can be realized with a fine grid of, for example, 250 μm.
Vorteilhafte Ausgestaltungen des erfindungsgemäßen Pad Grid Arrays sind in den Ansprüchen 2 bis 10 angegeben.Advantageous embodiments of the pad grid array according to the invention are specified in claims 2 to 10.
Vorteilhafte Ausgestaltungen des erfindungsgemäßen Ver- fahrens zur Herstellung eines Pad Grid Arrays sind in den Ansprüchen 11 bis 13 angegeben.Advantageous refinements of the method according to the invention for producing a pad grid array are specified in claims 11 to 13.
Der Anspruch 2 betrifft die Umgestaltung des Pad Grid Arrays zu einem Solder Grid Array. Da die Aufrechterhal- tung des erforderlichen Abstandes zwischen der neuen Gehäuseform und einer Leiterplatte bereits durch die Wellen gewährleistet ist, haben die Lothöcker hier allein die Aufgabe, die Anschluß-Pads mit den zugeordneten Anschlüssen der Leiterplatte elektrisch leitend zu verbin- den. Gemäß Anspruch 3 sind für derartige Lötverbindungen Zinn-Blei-Legierungen besonders gut geeignet.Claim 2 relates to the remodeling of the pad grid array to a solder grid array. Since the required distance between the new housing shape and a printed circuit board is already ensured by the waves, the solder bumps have the sole task of electrically connecting the connection pads to the assigned connections of the printed circuit board. According to claim 3, tin-lead alloys are particularly suitable for such solder connections.
Die Ausgestaltung nach Anspruch 4 erleichtert die Bildung der Lothöcker durch Umschmelzen einer elektroly- tisch aufgebrachten Lotschicht, da die in der Breite reduzierten Leiterbereiche ein Abfließen des flüssigen Lotes über die Leiterzüge verhindern. Die in der Breite reduzierten Leiterbereiche können dabei gemäß den Ansprüchen 5 und 6 auf einfache Weise durch eine Ein- schnürung der Leiterzüge oder durch in den mittleren Bereich der Leiterzüge eingebrachte Löcher gebildet werden. Die im Anspruch 7 angegebene Geometrie der Anschluß-Pads und der in der Breite reduzierten Leiterbereiche ermöglicht eine optimale Bildung der Lothöcker durch Umschmelzen der elektrolytisch aufgebrachten Lotschicht. Im Anspruch 8 sind bevorzugte und auf ein mit Wellen versehenes Substrat abgestimmte Rastermaße der Anschluß- pads gegeben.The embodiment according to claim 4 facilitates the formation of the solder bumps by remelting an electrolytically applied solder layer, since the conductor areas, which are reduced in width, prevent the liquid solder from flowing off via the conductor tracks. The reduced-width conductor areas can be formed according to claims 5 and 6 in a simple manner by constricting the conductor tracks or through holes made in the central area of the conductor tracks. The geometry of the connection pads and the conductor regions reduced in width enables an optimal formation of the solder bumps by remelting the electrolytically applied solder layer. Claim 8 provides preferred grid dimensions of the connection pads which are matched to a substrate provided with waves.
Die Weiterbildung nach Anspruch 9 ermöglicht eine zusätzliche Lotzufuhr bei der Bildung von Löthöckern durch Umschmelzen elektrolytisch aufgebrachter Lotschichten. Dabei ergeben sich optimale Bedingungen, wenn die im Anspruch 10 angegebene Geometrie der entsprechenden Lotzu- fuhrstrukturen eingehalten wird.The development according to claim 9 enables an additional supply of solder in the formation of solder bumps by remelting electrolytically applied solder layers. This results in optimal conditions if the geometry of the corresponding solder feed structures specified in claim 10 is observed.
Die Ausgestaltung des erfindungsgemäßen Verfahrens zur Herstellung eines Pad-Grid-Arrays nach Anspruch 12 ermöglicht eine besonders einfache Bildung von Lothöckern auf den Anschluß-Pads durch Umschmelzen elektrolytisch aufgebrachter Lotschichten. Dieses Umschmelzen kann dabei gemäß Anspruch 13 mit Hilfe eines Laserstrahls rasch und selektiv vorgenommen werden.The embodiment of the method according to the invention for producing a pad grid array according to claim 12 enables a particularly simple formation of solder bumps on the connection pads by remelting electrolytically applied solder layers. This remelting can be carried out quickly and selectively with the aid of a laser beam.
Ausführungsbeispiele der Erfindung sind in der Zeichnung dargestellt und werden im folgenden näher beschrieben.Embodiments of the invention are shown in the drawing and are described in more detail below.
Es zeigenShow it
Figur 1 eine perspektivische Darstellung eines spritzgegossenen und mit Wellen versehenen Substrats, Figur 2 bis Figur 5 verschiedene Verfahrensstadien bei der Herstellung eines mit Lothöckern versehenen Pad- Grid-Arrays auf dem Substrat gemäß Figur 1,1 shows a perspective illustration of an injection-molded substrate provided with waves, FIG. 2 to FIG. 5 shows different process stages in the production of a pad grid array provided with solder bumps on the substrate according to FIG. 1,
Figur 6 eine erste Möglichkeit für die Realisierung der Anschluß-Pads und ihrer Verbindung mit den weiterführenden Leiterzügen,FIG. 6 shows a first possibility for realizing the connection pads and their connection to the further conductor tracks,
Figur 7 eine zweite Möglichkeit für die Realisierung der Anschluß-Pads und ihrer Verbindung mit den weiterführenden Leiterzügen und Figur 8 einen Vergleich der Wellenformen eines für die Flip-Chip-Montage geeigneten Pad Grid Arrays und eines für die Oberflächenmontage geeigneten Pad Grid Arrays.Figure 7 shows a second possibility for the implementation of the connection pads and their connection with the further conductor lines and FIG. 8 shows a comparison of the waveforms of a pad grid array suitable for flip-chip mounting and a pad grid array suitable for surface mounting.
Figur 1 zeigt eine perspektivische Darstellung eines elektrisch isolierenden Substrats Sl, das auf seiner in der Zeichnung nach oben gekehrten Unterseite mit einer Vielzahl von parallel zueinander verlaufenden, erhabenen Wellen Wl versehen ist. Die Wellen Wl sind dabei durch integral angeformte Rippen des durch Spritzgießen hergestellten Substrats Sl gebildet. Als Substratmaterialien sind beispielsweise hochtemperaturbeständige Thermoplaste, wie Polyetherimid, Polyethersulfon oder Liquid Cri- stalline Polymers geeignet.FIG. 1 shows a perspective illustration of an electrically insulating substrate S1, which is provided on its underside, which faces upwards in the drawing, with a multiplicity of raised waves W1 running parallel to one another. The waves Wl are formed by integrally molded ribs of the substrate S1 produced by injection molding. High-temperature resistant thermoplastics, such as polyetherimide, polyether sulfone or liquid crystalline polymers, are suitable as substrate materials.
Auf der Unterseite des in Figur 1 dargestellten Substrats soll ein Pad Grid Array gebildet werden, dessen Anschluß-Pads jeweils im Scheitelbereich der Wellen Wl an den mit Sternen gekennzeichneten Stellen liegen sollen. Das durch die Sterne angedeutete Raster der Anschluß-Pads kann beispielsweise in Abmessungen zwischen 250 μm und 500 μm realisiert werden.A pad grid array is to be formed on the underside of the substrate shown in FIG. 1, the connection pads of which should lie in the apex region of the waves W1 at the locations marked with stars. The grid of the connection pads indicated by the stars can be realized, for example, in dimensions between 250 μm and 500 μm.
Bei der Herstellung eines Pad Grid Arrays wird zunächst das in Figur 2 im Querschnitt dargestellte Substrat Sl durch chemische Kupferabscheidung ganzflächig metallisiert, worauf auf der Unterseite des Substrats Sl das gewünschte Leitermuster einschließlich der Anschluß-Pads durch Laserstrukturierung erzeugt wird. Für diese Laser- strukturierung wird beispielsweise ein Nd:YAG Laser mit einer Wellenlänge von 1,06 μm eingesetzt. Anschließend wird die chemisch abgeschiedene Kupferschicht zur Fertigstellung des Leitermusters durch die elektrolytische Abscheidung von Kupfer verstärkt. Die elektrolytische Metallabscheidung auf das Leitermuster wird beispielsweise durch die kathodische Kontaktierung einer in der Zeichnung nicht dargestellten Sammelleitung ermöglicht, die alle leitenden Bereiche des Leitermusters miteinander verbindet und später beispielsweise mit Hilfe eines Laserstrahls abgetrennt wird. Das aus Figur 3 ersichtliche Leitermuster umfaßt die in den Scheitelbereichen der Wellen Wl liegenden Anschluß-Pads Pl und die davon wegführenden Leiterzüge LZ, sowie weitere Strukturen, die beispielsweise aus den an späteren Stelle noch zu erläuternden Figuren 7 und 8 hervorgehen.When producing a pad grid array, the substrate S1 shown in cross section in FIG. 2 is first metallized over the entire surface by chemical copper deposition, whereupon the desired conductor pattern including the connection pads is produced by laser structuring on the underside of the substrate S1. For example, an Nd: YAG laser with a wavelength of 1.06 μm is used for this laser structuring. The chemically deposited copper layer is then strengthened by the electrolytic deposition of copper to complete the conductor pattern. The electrolytic metal deposition on the conductor pattern is achieved, for example, by cathodic contacting in the Drawing, not shown, enables the collecting line, which connects all conductive areas of the conductor pattern to one another and is later separated, for example with the aid of a laser beam. The conductor pattern shown in FIG. 3 comprises the connection pads P1 located in the apex regions of the waves W1 and the conductor lines LZ leading away from them, as well as further structures which are evident, for example, from FIGS. 7 and 8, which will be explained later.
Gemäß Figur 4 wird anschließend durch elektrolytische Abscheidung eine Lotschicht LO auf das Leitermuster aufgebracht. Im geschilderten Ausführungsbeispiel handelt es sich bei der Lotschicht LO um eine Zinn-Blei- Legierung, die in einer Stärke zwischen 15 μm und 50 μm abgeschieden wird.According to FIG. 4, a solder layer LO is then applied to the conductor pattern by electrolytic deposition. In the exemplary embodiment described, the solder layer LO is a tin-lead alloy which is deposited in a thickness between 15 μm and 50 μm.
Anschließend wird das elekrolytisch abgeschiedene Lot durch Erwärmen auf eine über dem Schmelzpunkt liegende Temperatur umgeschmolzen, wobei sich durch die Oberflächenspannung des flüssigen Lotes auf den Anschluß-Pads Pl die aus Figur 5 ersichtlichen Lothöcker LH1 von selbst bilden. Im geschilderten Ausführungsbeispiel wird das Umschmelzen mit Hilfe eines in Figur 5 durch einen Pfeil LST angedeuteten Laserstrahls vorgenommen und selektiv auf die Anschluß-Pads Pl und deren anhand der Figuren 7 und 8 noch zu erläuternde nähere Umgebung beschränkt. Dieses Laserumschmelzen, das im Vergleich zu bekannten Umschmelzverfahren nur eine minimale Tempera- turbelastung des Substrats Sl erfordert, wird beispielsweise wieder mit Hilfe eines Nd.YAG Lasers mit einer Wellenlänge von 1,06 μm vorgenommen.Subsequently, the electrodeposited solder is remelted by heating to a temperature above the melting point, the solder bumps LH1 shown in FIG. 5 forming automatically due to the surface tension of the liquid solder on the connection pads P1. In the exemplary embodiment described, the remelting is carried out with the aid of a laser beam indicated by an arrow LST in FIG. 5 and is selectively limited to the connection pads P1 and their closer surroundings, which are yet to be explained with reference to FIGS. 7 and 8. This laser remelting, which in comparison to known remelting processes only requires a minimal temperature load on the substrate S1, is again carried out, for example, with the aid of an Nd.YAG laser with a wavelength of 1.06 μm.
Figur 6 zeigt eine erste Möglichkeit für die Ausbildung der Anschluß-Pads Pl und ihrer näheren Umgebung. Die Geometrie ist dabei als eine Abwicklung des Leitermusters dargestellt. Die Verbindung zwischen den Anschluß- Pads Pl und den weiterführenden Leiterzügen LZ erfolgt über eingeschnürte Leiterbereiche LB1, die bei Abmessungen der Anschluß-Pads Pl zwischen I00xl00μm2und250x250μm2 eine Breite zwischen 10 μm und 40 μm und eine Länge zwi- sehen 100 μm und 500 μm aufweisen. Diese eingeschnürten Leiterbereiche LB1 verhindern beim Umschmelzen der ele- krolytisch aufgebrachten Lotschicht LO (vgl. Figur 6) ein Abfließen des flüssigen Lotes über die Leiterzüge LZ. Außerdem wird durch die Lotschicht LO auf den Lei- terbereichen LB1 ein zusätzliches Lotvolumen für dieFIG. 6 shows a first possibility for the formation of the connection pads P1 and their immediate surroundings. The geometry is shown as a development of the conductor pattern. The connection between the connection Pads Pl and the further conductor tracks LZ are made via constricted conductor areas LB1, which have a width between 10 μm and 40 μm and a length between 100 μm and 500 μm with dimensions of the connection pads Pl between I00xl00μm 2 and 250x250μm 2 . These constricted conductor areas LB1 prevent the liquid solder from flowing off via the conductor tracks LZ when the electrolytically applied solder layer LO (see FIG. 6) melts. In addition, the solder layer LO on the conductor areas LB1 creates an additional solder volume for the
Bildung der Lothöcker LH1 (vgl. Figur 5) bereitgestellt. Durch in Figur 7 strichpunktiert dargestellte Lotzufuhrstrukturen LS, die von den einzelnen Anschluß-Pads Pl wegführen, kann in vergleichbarer Weise eine weitere Vergrößerung des Volumens der Löthöcker LH1 (vgl. Figur 5) bewirkt werden. Dementsprechend weisen diese Lotzufuhrstrukturen LS wie die Leiterbereiche LB1 eine Breite zwischen 10 μm und 40 μm und eine Länge zwischen 100 μm und 500 μm auf. Außerdem kann jeweils eine der von den einzelnen Anschluß-Pads Pl wegführenden Lotzufuhrstrukturen LS mit der an früherer Stelle erwähnten Sammelleitung verbunden werden, die bei der elektrolytischen Me- tallabscheidung auf das Leitermuster kathodisch kontaktiert wird und später vom übrigen Leiterbild abgetrennt wird. Erfolgt die Bildung der Lothöcker LH1 durch Umschmelzen der Lotschicht LO mit Hilfe eines Laserstrahls LST (vgl. Figuren 4 und 5), so wird der stark außer Fokus gestellte Laserstrahl LST jeweils selektiv über das Anschluß-Pad Pl, den Leiterbereich LB1 und ggf. über die Lotzufuhrstrukturen LS gerastert. Da das Abrastern in weniger als 0,1 Sekunden durchgeführt werden kann, erfolgt das Umschmelzen praktisch gleichzeitig.Formation of the solder bump LH1 (see FIG. 5) is provided. A further increase in the volume of the solder bumps LH1 (cf. FIG. 5) can be brought about in a comparable manner by means of the solder feed structures LS shown in dash-dot lines in FIG. 7, which lead away from the individual connection pads P1. Accordingly, these solder feed structures LS, like the conductor areas LB1, have a width between 10 μm and 40 μm and a length between 100 μm and 500 μm. In addition, one of the solder supply structures LS leading away from the individual connection pads Pl can be connected to the collecting line mentioned earlier, which is cathodically contacted to the conductor pattern during electrolytic metal deposition and is later separated from the rest of the conductor pattern. If the solder bumps LH1 are formed by remelting the solder layer LO with the aid of a laser beam LST (cf. FIGS. 4 and 5), the laser beam LST, which is out of focus, is in each case selectively via the connection pad P1, the conductor region LB1 and possibly via the solder feed structures LS rastered. Since scanning can be carried out in less than 0.1 seconds, remelting takes place practically simultaneously.
Figur 7 zeigt eine zweite Möglichkeit für die Ausbildung der hier mit P10 bezeichneten Anschluß-Pads und ihrer näheren Umgebung. Hier wird in den Verbindungsbereich zwischen Anschluß-Pad P10 und einem weiterführenden Lei- terzug LZ mittig ein Loch L eingebracht. Hierdurch entstehen zu beiden Seiten des Loches L in der Breite reduzierte Leiterbereiche LB2. Zusätzliche Lotzufuhrstrukturen LS sind auch in Figur 8 wieder durch strichpunktier- te Linien angedeutet.FIG. 7 shows a second possibility for the formation of the connection pads designated here with P10 and their immediate surroundings. Here, in the connection area between connection pad P10 and a further line hole LZ is inserted in the middle of the This results in width-reduced conductor areas LB2 on both sides of the hole L. Additional solder supply structures LS are again indicated in FIG. 8 by dash-dotted lines.
Die vorstehend geschilderten Pad Grid Arrays bzw. die nach dem Aufbringen von Lothöckern LH1 oder LH2 (vgl. Figuren 5 oder 6) entstandenen Solder Grid Arrays können sowohl für die Flip-Chip-Montage als auch für die Oberflächenmontage eingesetzt werden. Dabei müssen die Wellen des Substrats jedoch unterschiedlich hoch ausgeformt werden. Ein Vergleich zwischen für die Flip-Chip-Montage geeigneten Wellen W3 und den wesentlich höheren für die Oberflächenmontage geeigneten Wellen W4 zeigt Figur 8. Dabei handelt es sich um eine theoretische Gegenüberstellung, da bei einem Pad Grid Array sämtliche Anschluß Pads in einer Ebene liegen müssen und sämtliche Wellen eines Substrats damit stets gleich hoch sein müssen.The above-described pad grid arrays or the solder grid arrays created after the application of solder bumps LH1 or LH2 (see FIGS. 5 or 6) can be used both for flip-chip mounting and for surface mounting. However, the waves of the substrate have to be shaped to different heights. FIG. 8 shows a comparison between waves W3 suitable for flip-chip mounting and the much higher waves W4 suitable for surface mounting. This is a theoretical comparison, since with a pad grid array all connection pads must lie in one plane and all waves of a substrate must always be the same height.
Es ist noch daraufhinzuweisen, daß die auf der Unterseite eines Substrats gebildeten Wellen auch andere als in der Zeichnung dargestellte Formen aufweisen können und beispielsweise konzentrisch zueinander verlaufen können. Außerdem müssen die Wellen in Längsrichtung gesehen keine konstante Höhe aufweisen. So könne die Wellen in Längsrichtung gesehen beispielsweise jeweils zwischen zwei Anschluß-Pads Einbuchtungen oder Einkerbungen aufweisen. Durch diese Maßnahme wird die Elastizität der Anschluß-Pads auf den Wellen weiter erhöht, d.h. mechanische Spannungen durch Temperaturschwankungen oder dgl. können noch besser vermieden werden. It should also be pointed out that the waves formed on the underside of a substrate can also have shapes other than those shown in the drawing and can, for example, be concentric with one another. In addition, the waves do not have to have a constant height when viewed in the longitudinal direction. Seen in the longitudinal direction, for example, the waves could each have indentations or notches between two connection pads. This measure further increases the elasticity of the connection pads on the shafts, i.e. Mechanical stresses caused by temperature fluctuations or the like can be avoided even better.

Claims

Patentansprüche claims
1. Pad Grid Array, mit einem elektrisch isolierenden Substrat (Sl; S2), - einer Vielzahl von langgestreckten, erhabenen Wellen (Wl; W3; W4) auf der Unterseite des Substrats (Sl; S2), und einem auf die Unterseite des Substrats (Sl) aufgebrachten Leitermuster, wobei die Anschluß-Pads (Pl; P2; P10) des Leitermusters flächig im Grid Array angeordnet sind und jeweils im Scheitelbereich einer Welle (Wl; W3; W4) liegen, und wobei - die Wellen (Wl) durch integral angeformte Rippen des Substrats (Sl) gebildet sind.1. Pad grid array, with an electrically insulating substrate (Sl; S2), - a plurality of elongated, raised waves (Wl; W3; W4) on the underside of the substrate (Sl; S2), and one on the underside of the substrate (Sl) applied conductor pattern, the connection pads (Pl; P2; P10) of the conductor pattern being arranged flat in the grid array and each lying in the apex region of a wave (Wl; W3; W4), and wherein - the waves (Wl) integrally formed ribs of the substrate (Sl) are formed.
2. Pad Grid Array nach Anspruch 1, dadurch g e k e n n z e i c h n e t , daß auf die Anschluß-Pads (Pl; P10) Lothöcker (LHl) aufgebracht sind.2. Pad grid array according to Claim 1, characterized in that solder bumps (LHL) are applied to the connection pads (Pl; P10).
3. Pad Grid Array nach Anspruch 2, dadurch g e k e n n z e i c h n e t , daß die Lothöcker (LHl) aus einer Zinn-Blei-Legierung bestehen.3. Pad grid array according to claim 2, characterized in that the solder bumps (LHl) consist of a tin-lead alloy.
4. Pad Grid Array nach einem der vorhergehenden Ansprüche, dadurch g e k e n n z e i c h n e t , daß die Anschluß-Pads (Pl; P10) jeweils über einen in der Breite reduzierten Leiterbereich (LBl; LB2) mit den weiterführenden Leiterzügen (LZ) des Leitermusters verbunden sind.4. Pad grid array according to one of the preceding claims, characterized g e k e n n z e i c h n e t that the connection pads (Pl; P10) are each connected via a width-reduced conductor area (LBl; LB2) with the further conductor runs (LZ) of the conductor pattern.
5. Pad Grid Array nach Anspruch 4, dadurch g e k e n n z e i c h n e t , daß die in der Breite reduzierten Leiterbereiche (LBl) durch eine Einschnürung der Leiterzüge (LZ) gebildet sind. 5. Pad grid array according to claim 4, characterized in that the reduced conductor areas (LBl) are formed by a constriction of the conductor lines (LZ).
6. Pad Grid Array nach Anspruch 4, dadurch g e k e n n z e i c h n e t , daß die in der Breite reduzierten Leiterbereiche (LBZ) durch in den mittleren Bereich der Leiterzüge (LZ) eingebrachte Löcher (L) gebildet sind.6. Pad grid array according to claim 4, characterized in that the width-reduced conductor areas (LBZ) are formed by holes (L) made in the central area of the conductor tracks (LZ).
7. Pad Grid Array nach einem der Ansprüche 4 bis 6, dadurch g e k e n n z e i c h n e t , daß die Anschluß-Pads (Pl; P2; P10) in ihrer Fläche Abmessungen zwischen 100xl00zw2 und 250X250-?M2 aufweisen und daß die in der Breite reduzierten Leiterbereiche (LBl) eine Breite zwischen 10 und 40 μm und eine Länge zwischen 100 und 500 μm aufweisen.7. Pad grid array according to one of claims 4 to 6, characterized in that the connection pads (Pl; P2; P10) have dimensions in their area between 100xl00zw 2 and 250X250-? M 2 and that the conductor areas are reduced in width (LBl) have a width between 10 and 40 μm and a length between 100 and 500 μm.
8. Pad Grid Array nach einem der vorhergehenden Ansprüche, dadurch g e k e n n z e i c h n e t , daß die Anschluß-Pads (Pl; P2, P10) in einem Rastermaß zwischen 250 μm und 500 μm im Grid Array angeordnet sind.8. Pad grid array according to one of the preceding claims, characterized in that the connection pads (Pl; P2, P10) are arranged in a grid dimension between 250 μm and 500 μm in the grid array.
9. Pad Grid Array nach einem der Ansprüche 4 bis 8, dadurch g e k e n n z e i c h n e t , daß von den einzelnen Anschluß-Pads (Pl; P2; P10) jeweils mindestens eine, in der Breite gegenüber der Breite der Lei- terzüge (LZ) reduzierte Lotzufuhrstruktur (LS) wegführt.9. Pad grid array according to one of claims 4 to 8, characterized in that each of the individual connection pads (Pl; P2; P10) each has at least one solder feed structure (width-wise compared to the width of the conductor tracks (LZ)) ( LS) leads away.
10. Pad Grid Array nach einem der vorhergehenden Ansprüche, dadurch g e k e n n z e i c h n e t , daß die Lotzufuhrstrukturen (LS) eine Breite zwischen 10 und 40 μm und eine Länge zwischen 100 μm und 500 μm aufweisen.10. Pad grid array according to one of the preceding claims, characterized in that the solder feed structures (LS) have a width between 10 and 40 μm and a length between 100 μm and 500 μm.
11. Verfahren zur Herstellung eines Pad Grid Arrays mit folgenden Schritten:11. A method for producing a pad grid array comprising the following steps:
Herstellung eines elektrisch isolierenden Substrats (Sl; S2), dessen Unterseite eine Vielzahl von langgestreckten , erhabenen integral angeformten Wellen (Wl; W3; W4) aufweist, Aufbringen einer Metallisierung auf das Substrat (Sl; S2),Production of an electrically insulating substrate (S1; S2), the underside of which has a plurality of elongated, raised integrally formed waves (W1; W3; W4), Applying a metallization to the substrate (S1; S2),
Laserstrukturierung der Metallisierung auf der Unterseite des Substrats (Sl) zur Bildung eines Leitermu- sters, dessen Anschluß-Pads (Pl; PIO) im Grid Array angeordnet sind und jeweils im Scheitelbereich einer Welle (*W1; W3; W4) liegen.Laser structuring of the metallization on the underside of the substrate (S1) to form a conductor pattern, the connection pads (Pl; PIO) of which are arranged in the grid array and each lie in the apex region of a wave (* W1; W3; W4).
12. Verfahren nach Anspruch 11, dadurch g e k e n n z e i c h n e t , daß auf das Leitermuster ein Lot (LO) elektrolytisch aufgebracht wird und daß das Lot (LO) zumindest im Bereich der Anschluß-Pads (Pl; PIO) zur Bildung von Lothöckern (LHl; LH2) umgeschmolzen sind.12. The method according to claim 11, characterized in that a solder (LO) is electrolytically applied to the conductor pattern and that the solder (LO) at least in the region of the connection pads (Pl; PIO) to form solder bumps (LHl; LH2) are remelted.
13. Verfahren nach Anspruch 12, dadurch g e k e n n z e i c h n e t , daß das Lot (LO) mit Hilfe eines Laserstrahls (LST) umgeschmolzen wird. 13. The method according to claim 12, characterized in that the solder (LO) is remelted with the aid of a laser beam (LST).
PCT/EP1999/003801 1998-06-02 1999-06-01 Pad grid array and a method for producing such a pad grid array WO1999063589A1 (en)

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PCT/EP1999/003801 WO1999063589A1 (en) 1998-06-02 1999-06-01 Pad grid array and a method for producing such a pad grid array

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WO2008112463A1 (en) * 2007-03-09 2008-09-18 Micron Technology, Inc. Microelectronic workpieces and methods for manufacturing microelectronic devices using such workpieces
US7928582B2 (en) 2007-03-09 2011-04-19 Micron Technology, Inc. Microelectronic workpieces and methods for manufacturing microelectronic devices using such workpieces
US8492198B2 (en) 2007-03-09 2013-07-23 Micron Technology, Inc. Microelectronic workpieces with stand-off projections and methods for manufacturing microelectronic devices using such workpieces
US8987874B2 (en) 2007-03-09 2015-03-24 Micron Technology, Inc. Microelectronic workpieces and methods for manufacturing microelectronic devices using such workpieces

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