WO1999053532A1 - Slurry for chemical-mechanical polishing metal surfaces - Google Patents
Slurry for chemical-mechanical polishing metal surfaces Download PDFInfo
- Publication number
- WO1999053532A1 WO1999053532A1 PCT/US1999/007482 US9907482W WO9953532A1 WO 1999053532 A1 WO1999053532 A1 WO 1999053532A1 US 9907482 W US9907482 W US 9907482W WO 9953532 A1 WO9953532 A1 WO 9953532A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- slurry
- metal
- chemical
- mechanical polishing
- copper
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Definitions
- the present invention concerns chemical compositions for use in polishing.
- the present invention concerns chemical compositions for use in polishing.
- present invention relates to a polishing slurry for the chemical-mechanical polishing of metal surfaces.
- CMP Chemical-mechanical polishing
- CMP has become the technology of choice among semiconductor chip fabricators to polish or planarize the surface of semiconductor chips after
- each metal containing circuit pattern layer is laid down.
- CMP technology is well-known, and
- polishing slurry to the surface to be polished
- a slurry for CMP metal surfaces which generally comprises: (i) water; and (ii) high -2- purity fine metal oxide particles.
- U.S. Pat. 5,575,885 issued to Hirabayashi et al. discloses a slurry for CMP copper-based metal surfaces which generally comprises: (i)
- a slurry for CMP metal surfaces is needed which provides significant improvement in terms of removal rates as compared to the prior art slurries. Moreover, a slurry for CMP metal surfaces is needed which is useful for polishing metals
- the present invention is directed to a chemical composition or slurry for CMP which
- a slurry for CMP metal surfaces according to the present invention generally comprises: (i) water; (ii) abrasive particles; and (iii) an oxidizing
- the oxidizing solution (iii) comprises: (a) water
- metals selected from the group consisting of chromium, cobalt, copper, iron, lead,
- the oxidizing solution (iii) comprises: (a') water soluble peroxide; and (b') organic amine.
- organic amine in combination with
- such oxidizing solution can further optionally comprise one or more metals and/or compounds containing metals selected from
- FIG. 1 is a graph illustrating that in a slurry of the present invention the rapid
- FIG. 2 is a graph illustrating that in a slurry of the present invention the rate of
- FIG. 3 is a graph illustrating that in a slurry of the present invention the rate of
- FIG. 4 is a graph illustrating that in a slurry of the present invention the use of copper
- the present invention provides a chemical composition for use as a CMP slurry which
- the slurry contains: (i) water, (ii) abrasive particles; and (iii) an oxidizing solution.
- the slurry contains: (i) water, (ii) abrasive particles; and (iii) an oxidizing solution.
- oxidizing solution (iii) comprises: (a) water soluble peroxide; (b) an amino acid or mixture
- chromium from the group consisting of chromium, cobalt, copper, iron, lead, nickel, palladium, rhodium,
- the oxidizing solution (iii) comprises: (a') water soluble peroxide; and (b') organic amine.
- the water (i) used in the slurry is preferably distilled water. More preferably, the
- the abrasive particles (ii) used in the slurry may comprise any one or a mixture of a
- suitable abrasive particles include alumina, silica, silicon nitride, silicon carbide, ceria, copper
- the abrasive particles preferably have
- a mean size ranging from about 0.02 to about 1.0 micrometers, with a maximum size of less
- the abrasive particles are preferably present in the slurry in an amount of from about 0.1 to about 60% by weight of the slurry.
- the oxidizing solution (iii) used in the slurry must rapidly generate more hydroxyl
- the oxidizing solution (iii) comprises:
- chromium 0 group consisting of chromium, cobalt, copper, iron, lead, nickel, palladium, rhodium,
- the water soluble peroxide (iii)(a) and (iii)(a') may comprise any water soluble peroxide (iii)(a) and (iii)(a') may comprise any water soluble peroxide (iii)(a) and (iii)(a') may comprise any water soluble peroxide (iii)(a) and (iii)(a') may comprise any water soluble peroxide (iii)(a) and (iii)(a') may comprise any water soluble
- R peroxide having the structure R-O-O-H, where R is hydrogen, an aliphatic hydrocarbon, or
- the water soluble peroxide is hydrogen peroxide. In another preferred embodiment, the water soluble peroxide is t-butyl-
- the water soluble peroxide is preferably present in the slurry by weight from about 0.1% to about 30%.
- the amino acid (iii)(b) is selected from amino carboxylic acid, amino alkyl carboxylic acid, amino phenyl carboxylic acids and the sodium, potassium, and ammonium salts thereof, or a combination of the foregoing. Examples of specific amino acids suitable for use in the
- present invention include arginine, cysteine, glutamine, glutamic acid, glycine. histidine.
- the amino acid is preferably present in the slurry in an amount of from about 0.1 to about 10% by weight.
- metals and/or compounds containing metals (iii)(c) and optionally (iii)(c ) are one
- chromium or more selected from the group consisting of chromium, cobalt, copper, iron. lead, nickel,
- the metals can be used in the elemental form
- metal containing compounds such as water-soluble salts and oxides which
- Copper is the most preferred metal. Suitable forms of copper for use in the
- inventions include, for example, copper acetate, copper bromide, copper butyrate.
- hydroxide powder elemental copper powder, copper perchlorate, copper phenolsulfonate.
- compounds containing metals are preferably present in the slurry in an amount of from about
- the organic amine (iii)(b') used in the slurry may comprise primary amine (RNH 2 ),
- R is an aliphatic hydrocarbon or an
- the organic amine is N-(2-aminoethyl)-2-aminoethyl amine
- the organic amine is preferably
- present in the slurry in an amount of from about 0.1% to about 10% by weight.
- polishing For semiconductor polishing applications, it is generally preferred to polish
- the metal layers deposited on the substrate rapidly without etching or polishing the substrate
- the pH of the slurry is adjusted such that it is more acidic, the substrate material will not
- the slurry is optionally
- the slurry or polishing composition should be formulated so as to give a polishing
- glycol nitric acid, potassium hydroxide and propylene glycol may be added to adjust the
- surfactant polymeric stabilizers or other surface active dispersing agents can be used.
- Another aspect of the present invention relates to a method for polishing a metal
- polishing slurry composition with a metal surface to be polished and polishing the metal
- the polishing slurry composition comprises water, abrasive particles,
- the oxidizing solution comprises one or more
- water soluble peroxides one or more amino acids, and one or more metals or compounds
- metals selected from the group consisting of chromium, cobalt, copper, iron. lead.
- solution comprises one or more water soluble peroxides, one or more organic amines, and
- chromium consisting of chromium, cobalt, copper, iron, lead, nickel, palladium, rhodium, samarium, and
- the polishing method of the present invention is carried out by contacting the aqueous
- polishing composition or slurry with the metal to be polished normally at room temperature -9-
- the metal surface is then polished with the composition using a felt or other polishing pad.
- Typical pads include Rodel Suba 500 pads, IC 1000 pads or similar commercially available
- polishing is usually conducted at room temperature, it will be appreciated
- polishing composition of the present invention In addition to providing a slurry, the polishing composition of the present invention
- the metals and/or compounds may be generated in situ. More particularly, for example, the metals and/or compounds
- the polishing pad may be formed by incorporating a portion of the components of the slurry in a polishing pad.
- Pads that contain one or more components of the polishing slurry are well-known,
- the CMP slurry provided herein is particularly useful for polishing metal layers on
- Metal layers which may be polished using the CMP slurry disclosed herein include aluminum, copper, tantalum, tantalum nitride, titanium, tungsten, titanium nitride, titanium tungsten, and alloys or mixtures thereof.
- the slurry of the present invention may be prepared in a conventional manner by
- hydroxyl radical trap such as N,N-dimethyl-4-nitrosoaniline (PND A).
- PND A N,N-dimethyl-4-nitrosoaniline
- PNDA has a unique and strong absorption in the visible region at 440 nm whereas the
- the concentration of hydroxyl radical can be calculated by the rate equation
- ⁇ represents the molar absorptivity of PNDA
- c represents the transient concentration
- ⁇ 2 represents the molar abso ⁇ tivity of
- A is the absorption of the sample at any given time and A ⁇ is the initial absorption of
- Example 1 The purpose of the series of experiments conducted as Example 1 is to demonstrate
- Table 1 demonstrates that copper (both valences) is far superior as a radical promoter
- iron, lead, nickel, palladium, rhodium, samarium, and scandium are less effective in promoting
- Example 1 Each solution's intensity at 440nm was measured for 30 minutes in 5
- Example 2 demonstrates that as the concentration of b ⁇ s(hexamethvlene)t ⁇ am ⁇ ne
- Example 2 also demonstrates that the addition of metal ions to a
- Fig. 1 shows the plot of the ratio of PNDA concentration remaining in solution versus
- Example 3 The experiment in Example 3 was repeated except that glycine in the aqueous
- concentrations of hydrogen peroxide, amino acid and copper nitrate were 2% bv weight, 1%
- Fig. 2 illustrates the various components
- nitrate is replaced by copper oxide powder or elemental copper powder.
- concentration of copper oxide and copper powders varied from 3 mg/10 ml to 10 mg/10 ml.
- a tantalum disc is polished using a Struers polisher and Suba 500 pad, at a pressure
- Slurry A contains: (1) 3% by weight alumina abrasive particles with a mean
- Slurry B contains: (1) 3% by weight alumina abrasive particles with a mean
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000544000A JP2002511650A (en) | 1998-04-10 | 1999-04-05 | Slurry for polishing chemical-mechanical metal surfaces |
KR1020007011294A KR20010042616A (en) | 1998-04-10 | 1999-04-05 | Slurry for chemical-mechanical polishing metal surfaces |
EP99916387A EP1086484A4 (en) | 1998-04-10 | 1999-04-05 | Slurry for chemical-mechanical polishing metal surfaces |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US5861898A | 1998-04-10 | 1998-04-10 | |
US27745499A | 1999-03-26 | 1999-03-26 | |
US09/058,618 | 1999-03-26 | ||
US09/277,454 | 1999-03-26 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1999053532A1 true WO1999053532A1 (en) | 1999-10-21 |
Family
ID=26737823
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1999/007482 WO1999053532A1 (en) | 1998-04-10 | 1999-04-05 | Slurry for chemical-mechanical polishing metal surfaces |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP1086484A4 (en) |
JP (1) | JP2002511650A (en) |
KR (1) | KR20010042616A (en) |
WO (1) | WO1999053532A1 (en) |
Cited By (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2001012739A1 (en) * | 1999-08-13 | 2001-02-22 | Cabot Microelectronics Corporation | Chemical mechanical polishing systems and methods for their use |
EP1106663A1 (en) * | 1999-12-08 | 2001-06-13 | Eastman Kodak Company | Slurry for chemical mechanical polishing silicon dioxide |
WO2001048807A1 (en) * | 1999-12-28 | 2001-07-05 | Intel Corporation | Abrasives for chemical mechanical polishing |
SG83822A1 (en) * | 1999-10-27 | 2001-10-16 | Applied Materials Inc | Cmp slurry for planarizing metals |
WO2002020682A2 (en) * | 2000-09-08 | 2002-03-14 | Applied Materials, Inc. | Method of initiating copper cmp process |
WO2002044293A2 (en) * | 2000-12-01 | 2002-06-06 | Applied Materials, Inc. | Method and composition for the removal of residual materials during substrate planarization |
US6451697B1 (en) | 2000-04-06 | 2002-09-17 | Applied Materials, Inc. | Method for abrasive-free metal CMP in passivation domain |
US6468910B1 (en) | 1999-12-08 | 2002-10-22 | Ramanathan Srinivasan | Slurry for chemical mechanical polishing silicon dioxide |
US6508953B1 (en) | 2000-10-19 | 2003-01-21 | Ferro Corporation | Slurry for chemical-mechanical polishing copper damascene structures |
EP1302522A2 (en) * | 2001-10-15 | 2003-04-16 | DuPont Air Products NanoMaterials, LLC. | Gel-free colloidal abrasive and polishing compositions and methods of using them |
WO2003055958A1 (en) * | 2001-12-21 | 2003-07-10 | Dynea Canada, Ltd. | Abrasive composition containing organic particles for chemical mechanical planarization |
US6592742B2 (en) | 2001-07-13 | 2003-07-15 | Applied Materials Inc. | Electrochemically assisted chemical polish |
SG97157A1 (en) * | 1999-07-28 | 2003-07-18 | Eternal Chemical Co Ltd | Chemical-mechanical abrasive composition and method |
US6604987B1 (en) | 2002-06-06 | 2003-08-12 | Cabot Microelectronics Corporation | CMP compositions containing silver salts |
WO2002004573A3 (en) * | 2000-07-08 | 2003-08-21 | Arch Spec Chem Inc | Ready-to-use stable chemical-mechanical polishing slurries |
WO2003072672A1 (en) * | 2002-02-26 | 2003-09-04 | Applied Materials, Inc. | Method and composition for polishing a substrate |
US6702954B1 (en) | 2000-10-19 | 2004-03-09 | Ferro Corporation | Chemical-mechanical polishing slurry and method |
US6730592B2 (en) | 2001-12-21 | 2004-05-04 | Micron Technology, Inc. | Methods for planarization of metal-containing surfaces using halogens and halide salts |
US6740589B2 (en) | 2000-11-30 | 2004-05-25 | Showa Denko Kabushiki Kaisha | Composition for polishing semiconductor wafer, semiconductor circuit wafer, and method for producing the same |
US6783432B2 (en) | 2001-06-04 | 2004-08-31 | Applied Materials Inc. | Additives for pressure sensitive polishing compositions |
KR100450986B1 (en) * | 2000-11-24 | 2004-10-02 | 도꾜 지끼 인사쯔 가부시키가이샤 | Slurry for chemical mechanical polishing |
KR100450985B1 (en) * | 2000-11-24 | 2004-10-02 | 도꾜 지끼 인사쯔 가부시키가이샤 | Slurry for chemical mechanical polishing |
US6830503B1 (en) | 2002-01-11 | 2004-12-14 | Cabot Microelectronics Corporation | Catalyst/oxidizer-based CMP system for organic polymer films |
US6872329B2 (en) | 2000-07-28 | 2005-03-29 | Applied Materials, Inc. | Chemical mechanical polishing composition and process |
US6884723B2 (en) | 2001-12-21 | 2005-04-26 | Micron Technology, Inc. | Methods for planarization of group VIII metal-containing surfaces using complexing agents |
SG119226A1 (en) * | 2003-11-20 | 2006-02-28 | Eternal Chemical Co Ltd | Chemical mechanical abrasive slurry and method of using the same |
US7014669B2 (en) | 2002-02-11 | 2006-03-21 | Dupont Air Products Nanomaterials Llc | Catalytic composition for chemical-mechanical polishing, method of using same, and substrate treated with same |
WO2006049892A2 (en) * | 2004-10-27 | 2006-05-11 | Cabot Microelectronics Corporation | Metal ion-containing cmp composition and method for using the same |
US7049237B2 (en) | 2001-12-21 | 2006-05-23 | Micron Technology, Inc. | Methods for planarization of Group VIII metal-containing surfaces using oxidizing gases |
US7077880B2 (en) | 2004-01-16 | 2006-07-18 | Dupont Air Products Nanomaterials Llc | Surface modified colloidal abrasives, including stable bimetallic surface coated silica sols for chemical mechanical planarization |
US7121926B2 (en) | 2001-12-21 | 2006-10-17 | Micron Technology, Inc. | Methods for planarization of group VIII metal-containing surfaces using a fixed abrasive article |
US7121943B2 (en) | 2001-09-26 | 2006-10-17 | Igt | Gaming device with an increasing goal advancement game |
KR100735787B1 (en) * | 2000-04-04 | 2007-07-06 | 캐보트 마이크로일렉트로닉스 코포레이션 | Method for Polishing a Memory or Rigid Disk with an Amino Acid-Containing Composition |
US7402261B2 (en) | 2004-08-18 | 2008-07-22 | Samsung Electronics Co., Ltd. | Slurry compositions, methods of preparing slurry compositions, and methods of polishing an object using slurry compositions |
US7476620B2 (en) | 2005-03-25 | 2009-01-13 | Dupont Air Products Nanomaterials Llc | Dihydroxy enol compounds used in chemical mechanical polishing compositions having metal ion oxidizers |
US7513920B2 (en) | 2002-02-11 | 2009-04-07 | Dupont Air Products Nanomaterials Llc | Free radical-forming activator attached to solid and used to enhance CMP formulations |
US7691287B2 (en) | 2007-01-31 | 2010-04-06 | Dupont Air Products Nanomaterials Llc | Method for immobilizing ligands and organometallic compounds on silica surface, and their application in chemical mechanical planarization |
CN1854236B (en) * | 2005-04-21 | 2011-08-03 | 安集微电子(上海)有限公司 | Polished sizing material and its use |
CN102373014A (en) * | 2010-08-24 | 2012-03-14 | 安集微电子(上海)有限公司 | Chemical-mechanical polishing solution |
Families Citing this family (6)
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KR100458756B1 (en) * | 2001-06-27 | 2004-12-03 | 제일모직주식회사 | CMP Slurry for Polishing Metal Wirings of Semiconductor Devices |
JP3692066B2 (en) | 2001-11-28 | 2005-09-07 | 株式会社東芝 | CMP slurry and method of manufacturing semiconductor device |
KR100943020B1 (en) * | 2007-06-29 | 2010-02-17 | 제일모직주식회사 | CMP slurry composition for the phase change memory materials and polishing method using the same |
JP5263484B2 (en) * | 2008-02-27 | 2013-08-14 | Jsr株式会社 | Chemical mechanical polishing aqueous dispersion, polishing method for chemical mechanical polishing aqueous dispersion, and chemical mechanical polishing method for polishing a wiring layer made of copper or copper alloy provided on a substrate for an electro-optical display device |
KR100949255B1 (en) * | 2009-05-21 | 2010-03-25 | 제일모직주식회사 | CMP slurry composition for the phase change memory materials |
KR101833219B1 (en) * | 2016-08-05 | 2018-04-13 | 주식회사 케이씨텍 | Slurry composition for tungsten barrier layer polishing |
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US5783489A (en) * | 1996-09-24 | 1998-07-21 | Cabot Corporation | Multi-oxidizer slurry for chemical mechanical polishing |
US6309560B1 (en) * | 1996-12-09 | 2001-10-30 | Cabot Microelectronics Corporation | Chemical mechanical polishing slurry useful for copper substrates |
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- 1999-04-05 KR KR1020007011294A patent/KR20010042616A/en not_active Application Discontinuation
- 1999-04-05 JP JP2000544000A patent/JP2002511650A/en not_active Withdrawn
- 1999-04-05 EP EP99916387A patent/EP1086484A4/en not_active Withdrawn
- 1999-04-05 WO PCT/US1999/007482 patent/WO1999053532A1/en not_active Application Discontinuation
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US5575885A (en) * | 1993-12-14 | 1996-11-19 | Kabushiki Kaisha Toshiba | Copper-based metal polishing solution and method for manufacturing semiconductor device |
US5770095A (en) * | 1994-07-12 | 1998-06-23 | Kabushiki Kaisha Toshiba | Polishing agent and polishing method using the same |
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Cited By (69)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SG97157A1 (en) * | 1999-07-28 | 2003-07-18 | Eternal Chemical Co Ltd | Chemical-mechanical abrasive composition and method |
US7354530B2 (en) | 1999-08-13 | 2008-04-08 | Shumin Wang | Chemical mechanical polishing systems and methods for their use |
US6840971B2 (en) | 1999-08-13 | 2005-01-11 | Cabot Microelectronics Corporation | Chemical mechanical polishing systems and methods for their use |
WO2001012739A1 (en) * | 1999-08-13 | 2001-02-22 | Cabot Microelectronics Corporation | Chemical mechanical polishing systems and methods for their use |
US6520840B1 (en) | 1999-10-27 | 2003-02-18 | Applied Materials, Inc. | CMP slurry for planarizing metals |
US6435944B1 (en) | 1999-10-27 | 2002-08-20 | Applied Materials, Inc. | CMP slurry for planarizing metals |
SG83822A1 (en) * | 1999-10-27 | 2001-10-16 | Applied Materials Inc | Cmp slurry for planarizing metals |
US6544892B2 (en) | 1999-12-08 | 2003-04-08 | Eastman Kodak Company | Slurry for chemical mechanical polishing silicon dioxide |
EP1106663A1 (en) * | 1999-12-08 | 2001-06-13 | Eastman Kodak Company | Slurry for chemical mechanical polishing silicon dioxide |
US6627107B2 (en) | 1999-12-08 | 2003-09-30 | Eastman Kodak Company | Slurry for chemical mechanical polishing silicon dioxide |
US6468910B1 (en) | 1999-12-08 | 2002-10-22 | Ramanathan Srinivasan | Slurry for chemical mechanical polishing silicon dioxide |
US7091164B2 (en) | 1999-12-08 | 2006-08-15 | Eastman Kodak Company | Slurry for chemical mechanical polishing silicon dioxide |
KR100759623B1 (en) * | 1999-12-08 | 2007-09-17 | 이스트맨 코닥 캄파니 | Chemical-Mechanical Silicon Dioxide Polishing Slurry |
US7087188B2 (en) | 1999-12-28 | 2006-08-08 | Intel Corporation | Abrasives for chemical mechanical polishing |
US6881674B2 (en) | 1999-12-28 | 2005-04-19 | Intel Corporation | Abrasives for chemical mechanical polishing |
WO2001048807A1 (en) * | 1999-12-28 | 2001-07-05 | Intel Corporation | Abrasives for chemical mechanical polishing |
KR100735787B1 (en) * | 2000-04-04 | 2007-07-06 | 캐보트 마이크로일렉트로닉스 코포레이션 | Method for Polishing a Memory or Rigid Disk with an Amino Acid-Containing Composition |
US6451697B1 (en) | 2000-04-06 | 2002-09-17 | Applied Materials, Inc. | Method for abrasive-free metal CMP in passivation domain |
WO2002004573A3 (en) * | 2000-07-08 | 2003-08-21 | Arch Spec Chem Inc | Ready-to-use stable chemical-mechanical polishing slurries |
US6872329B2 (en) | 2000-07-28 | 2005-03-29 | Applied Materials, Inc. | Chemical mechanical polishing composition and process |
WO2002020682A2 (en) * | 2000-09-08 | 2002-03-14 | Applied Materials, Inc. | Method of initiating copper cmp process |
US6541384B1 (en) | 2000-09-08 | 2003-04-01 | Applied Materials, Inc. | Method of initiating cooper CMP process |
WO2002020682A3 (en) * | 2000-09-08 | 2002-05-30 | Applied Materials Inc | Method of initiating copper cmp process |
US6702954B1 (en) | 2000-10-19 | 2004-03-09 | Ferro Corporation | Chemical-mechanical polishing slurry and method |
EP1337601A1 (en) * | 2000-10-19 | 2003-08-27 | Ferro Corporation | Slurry for chemical-mechanical polishing copper damascene structures |
US6508953B1 (en) | 2000-10-19 | 2003-01-21 | Ferro Corporation | Slurry for chemical-mechanical polishing copper damascene structures |
EP1337601A4 (en) * | 2000-10-19 | 2005-09-14 | Ferro Corp | Slurry for chemical-mechanical polishing copper damascene structures |
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Publication number | Publication date |
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EP1086484A4 (en) | 2003-08-06 |
KR20010042616A (en) | 2001-05-25 |
EP1086484A1 (en) | 2001-03-28 |
JP2002511650A (en) | 2002-04-16 |
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