WO1999052647B1 - Non-planar micro-optical structures - Google Patents

Non-planar micro-optical structures

Info

Publication number
WO1999052647B1
WO1999052647B1 PCT/US1999/008279 US9908279W WO9952647B1 WO 1999052647 B1 WO1999052647 B1 WO 1999052647B1 US 9908279 W US9908279 W US 9908279W WO 9952647 B1 WO9952647 B1 WO 9952647B1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
laser structure
microlens
planar
adjacent layers
Prior art date
Application number
PCT/US1999/008279
Other languages
French (fr)
Other versions
WO1999052647A1 (en
Inventor
Gregory Peake
Stephen Hersee
Andrew Saragan
Original Assignee
Univ New Mexico
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ New Mexico filed Critical Univ New Mexico
Publication of WO1999052647A1 publication Critical patent/WO1999052647A1/en
Publication of WO1999052647B1 publication Critical patent/WO1999052647B1/en

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/0006—Arrays
    • G02B3/0037—Arrays characterized by the distribution or form of lenses
    • G02B3/0056—Arrays characterized by the distribution or form of lenses arranged along two different directions in a plane, e.g. honeycomb arrangement of lenses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29D—PRODUCING PARTICULAR ARTICLES FROM PLASTICS OR FROM SUBSTANCES IN A PLASTIC STATE
    • B29D11/00—Producing optical elements, e.g. lenses or prisms
    • B29D11/00009—Production of simple or compound lenses
    • B29D11/00365—Production of microlenses
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G02B6/124—Geodesic lenses or integrated gratings
    • G02B6/1245—Geodesic lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0267—Integrated focusing lens
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H01S5/18388—Lenses
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083—Constructional arrangements
    • G02B2006/12102—Lens
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083—Constructional arrangements
    • G02B2006/12121—Laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1089—Unstable resonators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18322—Position of the structure
    • H01S5/18327—Structure being part of a DBR

Abstract

In one embodiment, the present invention provides a microlens having very small focal length. The present invention also provides a non-planar microstructure having a covering layer which is slowly oxidizing or substantially free of oxygen. The present invention also provides methods for forming such microlenses and microstructures. In addition, the present invention provides a VCSEL which includes one or more non-planar microstructures of the present invention.

Claims

AMENDED CLAIMS [received by the International Bureau on 4 October 1999 (04.10.99); original claims 1, 16, 19, 45, 69 and 70-72 amended; remaining claims unchanged (11 pages)]
1. A non-faceted microlens having a focal length of 50 μm or less.
The microlens of claim 1, wherein said microlens has a focal length of 40 μm or less.
3. The microlens of claim 1, wherein said microlens has a focal length of 30 μm or less.
4. The microlens of claim 1 , wherein said microlens has a diameter of 30 μm or less.
5. The microlens of claim 1 , wherein said microlens is astigmatic.
6. The microlens of claim 1, wherein said microlens comprises a semiconductor material.
7. The microlens of claim 1 , wherein said microlens comprises a group III-V semiconductor material.
8. The microlens of claim 1, wherein said microlens comprises GaAs.
9. An array of microlenses mounted on a substrate, each of said microlenses having a focal length of 50 μ or less.
10. The array of claim 9, wherein each of said microlenses has a focal length of 40 μm or less.
11. The array of claim 9, wherein said of said microlenses has a focal length of 30 μm or less.
12. The array of claim 9, wherein each of said microlenses has a diameter of 30 μm or less.
1 . The array of claim 9, wherein each of said microlenses comprises a semiconductor material.
14. The array of claim 9, wherein each of said microlenses comprises a group ITT-V semiconductor material.
15. The array of claim 9, wherein each of said microlenses comprises GaAs.
16. Λ three-dimensional non-faceted non-planar microstructure comprising a first layer comprising at least one first CVD material selected from the group consisting of: a rapidly oxidizing CVD material and an oxygen-containing CVD material; and a covering layer comprising at least one second CVD material selected from the group
36 consisting of: a slowly oxidizing CVD material and a substantially oxygen free CVD material, said covering layer substantially covering a top surface of said first layer.
17. The non-planar microstructure of claim 16, wherein said covering layer comprises a group III-V semiconductor material.
18. The non-planar microstructure of claim 16, wherein said covering layer comprises GaAs.
19. A method for making at least one three-dimensional non- faceted non-planar microstructure comprising the steps of: depositing at least one CVD material through at least one window of a mask layer and an opening in a spacer layer beneath said mask layer to form a non-planar microstructure on a substrate, said mask layer being separated from said substrate by said spacer layer and overhanging said spacer layer, and removing said mask layer and said spacer layer from said substrate by applying a removal solution containing HF to said spacer layer to form a non-planar microstructure.
20. The method of claim 19, wherein said removal step comprises applying an aqueous solution of HF having an HF:H20 ratio of between 1 :20 and 1:5.
21. The method of claim 19, wherein said removal step comprises applying an aqueous solution of HF having an HF:H20 ratio of about 1:10.
37
22. The method of claim 1 , wherein, said spacer layer has an Al concentration of at least about 70%.
23. The method of claim 1 , wherein said spacer layer has an Al concentration of at least about 90%.
24. The method of claim 19, wherein said mask comprises GaAs.
25. The method of claim 19, wherein said non-planar microstructure comprises a microlens.
26. The method of claim 19, wherein said at least one non-planar microstructure comprises an array of microstructures on a substrate and said method comprises the steps of depositing said CVD material on said substrate through an array of mask layer windows and spacer openings to form an array of non-planar microstructures.
27. The method of claim 26, wherein said array of microstructures comprises an array of microlenses.
28. The method of claim 19, wherein said non-planar microstructure comprises a semiconductor material.
38
29. The method of claim 19, wherein said non-planar microstructure comprises a group III-V semiconductor material.
30. The method of claim 19, wherein said non-planar microstructure comprises GaAs.
31. The method of claim 19, wherein said non-planar microstructure comprises SiN.
32. The method of claim 19, wherein said non-planar microstructure comprises a first layer comprising at least one first CVD material selected from the group consisting of: a rapidly oxidizing CVD material and an oxygen-containing CVD material; and a covering layer comprising at least one second CVD material selected from the group consisting of: a slowly oxidizing CVD material and a substantially oxygen free CVD material, said covering layer substantially covering a top surface of said first layer.
33. The method of claim 32, wherein said covering layer comprises GaAs.
34. The method of claim 19, wherein said deposition step is carried out by chemical vapor deposition.
35. The method of claim 19, further comprising the steps of: depositing said spacer layer on said substrate; depositing said mask layer on said spacer layer; etching said at least one window in said mask layer;
39 etching said at least one opening in said spacer so that said mask layer overhangs said opening; and cleaning said mask layer, said spacer layer and said substrate to remove impurities therefrom.
36. The method of claim 19, wherein said CVD material comprises the same material as said substrate.
37. The method of claim 19, wherein said CVD material comprises a different material than said substrate.
38. The method of claim 19, wherein said substrate is a top layer of a VCSEL.
39. The method of claim 38, wherein said non-planar microstructure comprises a microlens.
40. The method of claim 39, wherein said top layer comprises a convex layer.
41. The method of claim 38, wherein said non-planar microstructure comprises a convex layer.
42. The method of claim 41 , wherein said top layer comprises a convex layer.
40
43. The method of claim 38, wherein said non-planar microstructure comprises a concave layer.
44. The method of claim 43 wherein said top layer comprises a concave layer.
45. A vertical cavity surface emitting laser structure comprising: a vertical cavity surface emitting laser including at least one three-dimensional non-faceted non-planar microstructure.
46. The laser structure of claim 45, wherein said at least one non-planar microstructure comprises a layer located at one end of said laser structure.
47. The laser structure of claim 45, wherein said laser structure includes at least two non-planar microstructures; said at least two non-planar microstructures comprise at least two adjacent layers; and said two adjacent layers arc located at one end of said laser structure.
48. The laser structure of claim 47, wherein each of said two adjacent layers is convex.
49. The laser structure of claim 48, wherein each of said two adjacent layers has a different curvature.
41
50. The laser structure of claim 47, wherein each of said two adjacent layers is concave.
51. The laser structure of claim 50, wherein each of said two adjacent layers has a different curvature.
52. The laser structure of claim 47, wherein one of said adjacent layers comprises a convex layer and at least one of said adjacent layers comprises a concave layer.
53. The laser structure of claim 45, wherein said non-planer structure comprises at least one interior layer of said laser structure.
54. The laser structure of claim 45, wherein said laser structure includes at least two non-planar microstructures; said at least two non-planar microstructures comprise at least two adjacent layers; and said two adjacent layers are interior layers of said laser structure.
55. The laser structure of claim 54, wherein each of said two adjacent layers is convex.
56. The laser structure of claim 55, wherein each of said two adjacent layers has a different curvature.
42
57. The laser structure of claim 54, wherein each of said two adjacent layers is concave.
58. The laser structure of claim 57, wherein each of said two adjacent layers has a different curvature.
59. The laser structure of claim 54, wherein one of said adjacent layers comprises a convex layer and at least one of said adjacent layers comprises a concave layer.
60. The laser structure of claim 45, wherein said at least one non-planar microstructure comprises a microlens.
61. The laser structure of claim 60, wherein said microlens has an emitting surface and said laser structure further comprises an ITO contact mounted on and covering substantially all of said emitting surface.
62. The laser structure of claim 61 , further comprising a ring comprising Λu which annularly surround a base region of said microlens
63. The laser structure of claim 60, wherein said microlens comprises a semiconductor material.
64. The laser structure of claim 60, wherein said microlens comprises a group III-V semiconductor material.
43
65. The laser structure of claim 60, wherein said microlens comprises GaAs.
66. The laser structure of claim 45, wherein said at least one non-planar microstructure comprises at least one convex layer.
67. The laser structure of claim 66, wherein said laser structure further comprises a microlens mounted on said at least one convex layer.
68. The laser structure of claim 45, wherein said at least one non-planar microstructure comprises at least one concave layer.
69. A method for making at least one non-planar microstructure comprising the steps of: depositing at least one CVD material through at least one window of a reusable shadow mask to form a non-planar microstructure on a substrate, said reusable shadow mask including an overhanging region which overhangs a spacer region which is directly bonded to said substrate.
70. The method of claim 69, further comprising the step of: removing said reusable shadow mask from said substrate.
71. The method of claim 69, wherein said reusable shadow mask comprises Si.
44
72. The method of claim 71, wherein said reusable shadow mask has an exterior covering of SiO2.
73. The method of claim 69, wherein said non-planar structure is a beam expander of an edge emitting laser.
74. The method of claim 69, wherein said substrate is an edge emitting laser and said non-planar structure comprises a microlens.
45
PCT/US1999/008279 1998-04-16 1999-04-15 Non-planar micro-optical structures WO1999052647A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US8218098P 1998-04-16 1998-04-16
US60/082,180 1998-04-16

Publications (2)

Publication Number Publication Date
WO1999052647A1 WO1999052647A1 (en) 1999-10-21
WO1999052647B1 true WO1999052647B1 (en) 1999-12-02

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WO (1) WO1999052647A1 (en)

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Also Published As

Publication number Publication date
WO1999052647A1 (en) 1999-10-21
US6728289B1 (en) 2004-04-27
US6122109A (en) 2000-09-19
US6365237B1 (en) 2002-04-02

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