WO1999050940A1 - Vertical optical cavities produced with selective area epitaxy - Google Patents
Vertical optical cavities produced with selective area epitaxy Download PDFInfo
- Publication number
- WO1999050940A1 WO1999050940A1 PCT/US1999/003991 US9903991W WO9950940A1 WO 1999050940 A1 WO1999050940 A1 WO 1999050940A1 US 9903991 W US9903991 W US 9903991W WO 9950940 A1 WO9950940 A1 WO 9950940A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- optical cavity
- vertical optical
- active layer
- distributed bragg
- bragg reflector
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18358—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] containing spacer layers to adjust the phase of the light wave in the cavity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
- H01S5/1057—Comprising an active region having a varying composition or cross-section in a specific direction varying composition along the optical axis
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
- H01S5/106—Comprising an active region having a varying composition or cross-section in a specific direction varying thickness along the optical axis
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/42—Arrays of surface emitting lasers
- H01S5/423—Arrays of surface emitting lasers having a vertical cavity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
- H01S5/18388—Lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2077—Methods of obtaining the confinement using lateral bandgap control during growth, e.g. selective growth, mask induced
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP99908409A EP1066667A4 (en) | 1998-03-30 | 1999-02-24 | Vertical optical cavities produced with selective area epitaxy |
AU27847/99A AU2784799A (en) | 1998-03-30 | 1999-02-24 | Vertical optical cavities produced with selective area epitaxy |
JP2000541756A JP2002510869A (en) | 1998-03-30 | 1999-02-24 | Vertical optical cavity manufactured by selective area epitaxy |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/050,657 US5960024A (en) | 1998-03-30 | 1998-03-30 | Vertical optical cavities produced with selective area epitaxy |
US09/050,657 | 1998-03-30 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1999050940A1 true WO1999050940A1 (en) | 1999-10-07 |
Family
ID=21966584
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1999/003991 WO1999050940A1 (en) | 1998-03-30 | 1999-02-24 | Vertical optical cavities produced with selective area epitaxy |
Country Status (6)
Country | Link |
---|---|
US (2) | US5960024A (en) |
EP (1) | EP1066667A4 (en) |
JP (1) | JP2002510869A (en) |
CN (1) | CN1295730A (en) |
AU (1) | AU2784799A (en) |
WO (1) | WO1999050940A1 (en) |
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EP1030420A1 (en) * | 1999-01-26 | 2000-08-23 | Lucent Technologies Inc. | A vertical cavity surface emitting laser array and a process for making same |
EP1229374A2 (en) * | 2001-02-06 | 2002-08-07 | Agilent Technologies, Inc. (a Delaware corporation) | Optical cavities for optical devices |
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US6487231B1 (en) * | 1998-04-14 | 2002-11-26 | Bandwidth 9, Inc. | Vertical cavity apparatus with tunnel junction |
US6535541B1 (en) * | 1998-04-14 | 2003-03-18 | Bandwidth 9, Inc | Vertical cavity apparatus with tunnel junction |
US6493372B1 (en) * | 1998-04-14 | 2002-12-10 | Bandwidth 9, Inc. | Vertical cavity apparatus with tunnel junction |
US6490311B1 (en) * | 1998-04-14 | 2002-12-03 | Bandwidth 9, Inc. | Vertical cavity apparatus with tunnel junction |
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US6258615B1 (en) * | 1998-11-12 | 2001-07-10 | Sandia Corporation | Method of varying a characteristic of an optical vertical cavity structure formed by metalorganic vapor phase epitaxy |
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- 1999-02-24 EP EP99908409A patent/EP1066667A4/en not_active Withdrawn
- 1999-02-24 JP JP2000541756A patent/JP2002510869A/en active Pending
- 1999-02-24 AU AU27847/99A patent/AU2784799A/en not_active Abandoned
- 1999-02-24 WO PCT/US1999/003991 patent/WO1999050940A1/en not_active Application Discontinuation
- 1999-06-22 US US09/337,790 patent/US6222871B1/en not_active Expired - Lifetime
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1030420A1 (en) * | 1999-01-26 | 2000-08-23 | Lucent Technologies Inc. | A vertical cavity surface emitting laser array and a process for making same |
EP1229374A2 (en) * | 2001-02-06 | 2002-08-07 | Agilent Technologies, Inc. (a Delaware corporation) | Optical cavities for optical devices |
EP1229374A3 (en) * | 2001-02-06 | 2003-04-02 | Agilent Technologies, Inc. (a Delaware corporation) | Optical cavities for optical devices |
US6833958B2 (en) | 2001-02-06 | 2004-12-21 | Agilent Technologies, Inc. | Optical cavities for optical devices |
Also Published As
Publication number | Publication date |
---|---|
US5960024A (en) | 1999-09-28 |
CN1295730A (en) | 2001-05-16 |
JP2002510869A (en) | 2002-04-09 |
US6222871B1 (en) | 2001-04-24 |
EP1066667A4 (en) | 2001-04-11 |
AU2784799A (en) | 1999-10-18 |
EP1066667A1 (en) | 2001-01-10 |
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