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Publication numberWO1999043761 A1
Publication typeApplication
Application numberPCT/JP1999/000844
Publication date2 Sep 1999
Filing date24 Feb 1999
Priority date24 Feb 1998
Also published asDE69917010D1, DE69917010T2, EP1061111A1, EP1061111A4, EP1061111B1, US6410444, US6436835, US20020045350
Publication numberPCT/1999/844, PCT/JP/1999/000844, PCT/JP/1999/00844, PCT/JP/99/000844, PCT/JP/99/00844, PCT/JP1999/000844, PCT/JP1999/00844, PCT/JP1999000844, PCT/JP199900844, PCT/JP99/000844, PCT/JP99/00844, PCT/JP99000844, PCT/JP9900844, WO 1999/043761 A1, WO 1999043761 A1, WO 1999043761A1, WO 9943761 A1, WO 9943761A1, WO-A1-1999043761, WO-A1-9943761, WO1999/043761A1, WO1999043761 A1, WO1999043761A1, WO9943761 A1, WO9943761A1
InventorsTakanori Kido, Kagetaka Ichikawa
ApplicantShowa Denko K.K.
Export CitationBiBTeX, EndNote, RefMan
External Links: Patentscope, Espacenet
Abrasive composition for polishing semiconductor device and process for producing semiconductor device with the same
WO 1999043761 A1
Abstract
An abrasive composition for semiconductor device polishing which comprises cerium oxide, a water-soluble organic compound having at least one of -COOH, -COOMX (wherein MX is an atom or functional group which each, as a substitute for hydrogen, is capable of forming a salt), -SO3H, and -SO3MY (wherein MY is an atom or functional group which each, as a substitute for hydrogen, is capable of forming a salt), and water; and a method of shallow trench isolation in which the abrasive composition is used.
Patent Citations
Cited PatentFiling datePublication dateApplicantTitle
JPH0841443A * Title not available
JPH08302338A * Title not available
JPH09137156A * Title not available
Non-Patent Citations
Reference
1 *See also references of EP1061111A4
Referenced by
Citing PatentFiling datePublication dateApplicantTitle
EP1274123A1 *12 Apr 20018 Jan 2003Showa Denko K.K.Polishing compound for polishing semiconductor device and method for manufacturing semiconductor device using the same
EP1274123A4 *12 Apr 20017 Mar 2007Showa Denko KkPolishing compound for polishing semiconductor device and method for manufacturing semiconductor device using the same
US662710710 Jul 200230 Sep 2003Eastman Kodak CompanySlurry for chemical mechanical polishing silicon dioxide
US709116411 Jul 200315 Aug 2006Eastman Kodak CompanySlurry for chemical mechanical polishing silicon dioxide
US854626124 Feb 20111 Oct 2013Samsung Electronics Co., Ltd.Slurry for polishing and planarization method of insulating layer using the same
Classifications
International ClassificationH01L21/3105, C09K3/14
Cooperative ClassificationH01L21/31053, C09K3/1463
European ClassificationC09K3/14D2, H01L21/3105B2
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