WO1999041773A1 - Substrate support for a thermal processing chamber - Google Patents
Substrate support for a thermal processing chamber Download PDFInfo
- Publication number
- WO1999041773A1 WO1999041773A1 PCT/US1999/002742 US9902742W WO9941773A1 WO 1999041773 A1 WO1999041773 A1 WO 1999041773A1 US 9902742 W US9902742 W US 9902742W WO 9941773 A1 WO9941773 A1 WO 9941773A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- edge ring
- silicon nitride
- polysilicon layer
- layer
- substrate
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10S156/914—Differential etching apparatus including particular materials of construction
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP99905887A EP1055252A1 (en) | 1998-02-11 | 1999-02-08 | Substrate support for a thermal processing chamber |
KR1020007008831A KR20010072545A (en) | 1998-02-11 | 1999-02-08 | Substrate support for a thermal processing chamber |
JP2000531865A JP4554075B2 (en) | 1998-02-11 | 1999-02-08 | Heat treatment chamber substrate support and method of forming heat treatment chamber substrate support |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/022,134 US6200388B1 (en) | 1998-02-11 | 1998-02-11 | Substrate support for a thermal processing chamber |
US09/022,134 | 1998-02-11 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1999041773A1 true WO1999041773A1 (en) | 1999-08-19 |
Family
ID=21807989
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1999/002742 WO1999041773A1 (en) | 1998-02-11 | 1999-02-08 | Substrate support for a thermal processing chamber |
Country Status (5)
Country | Link |
---|---|
US (1) | US6200388B1 (en) |
EP (1) | EP1055252A1 (en) |
JP (1) | JP4554075B2 (en) |
KR (1) | KR20010072545A (en) |
WO (1) | WO1999041773A1 (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002222768A (en) * | 2001-01-24 | 2002-08-09 | Ibiden Co Ltd | Jig for semiconductor |
WO2005056873A1 (en) * | 2003-12-05 | 2005-06-23 | Morgan Advanced Ceramics, Inc. | Free-standing silicon carbide articles formed by chemical vapor deposition and methods for their manufacture |
US8114505B2 (en) | 2003-12-05 | 2012-02-14 | Morgan Advanced Ceramics, Inc. | Free-standing silicon carbide articles formed by chemical vapor deposition and methods for their manufacture |
WO2012092008A1 (en) * | 2010-12-30 | 2012-07-05 | Veeco Instruments Inc. | Wafer carrier with selective control of emissivity |
TWI739392B (en) * | 2019-04-16 | 2021-09-11 | 南韓商東海炭素股份有限公司 | SiC EDGE RING |
US11702748B2 (en) | 2017-03-03 | 2023-07-18 | Lam Research Corporation | Wafer level uniformity control in remote plasma film deposition |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100292410B1 (en) | 1998-09-23 | 2001-06-01 | 윤종용 | Process chamber for reducing particulate contamination for manufacturing semiconductor device |
US6383931B1 (en) * | 2000-02-11 | 2002-05-07 | Lam Research Corporation | Convertible hot edge ring to improve low-K dielectric etch |
US6939821B2 (en) * | 2000-02-24 | 2005-09-06 | Shipley Company, L.L.C. | Low resistivity silicon carbide |
US6514378B1 (en) * | 2000-03-31 | 2003-02-04 | Lam Research Corporation | Method for improving uniformity and reducing etch rate variation of etching polysilicon |
US8202621B2 (en) * | 2001-09-22 | 2012-06-19 | Rohm And Haas Company | Opaque low resistivity silicon carbide |
US20030159778A1 (en) * | 2002-02-27 | 2003-08-28 | Kunihiko Koroyasu | Plasma processing apparatus, protecting layer therefor and installation of protecting layer |
US7704327B2 (en) * | 2002-09-30 | 2010-04-27 | Applied Materials, Inc. | High temperature anneal with improved substrate support |
US20080090309A1 (en) * | 2003-10-27 | 2008-04-17 | Ranish Joseph M | Controlled annealing method |
US8536492B2 (en) * | 2003-10-27 | 2013-09-17 | Applied Materials, Inc. | Processing multilayer semiconductors with multiple heat sources |
US7127367B2 (en) * | 2003-10-27 | 2006-10-24 | Applied Materials, Inc. | Tailored temperature uniformity |
JP2005340488A (en) * | 2004-05-27 | 2005-12-08 | Matsushita Electric Ind Co Ltd | Device for manufacturing electronic device |
US20060060145A1 (en) * | 2004-09-17 | 2006-03-23 | Van Den Berg Jannes R | Susceptor with surface roughness for high temperature substrate processing |
US8222574B2 (en) * | 2007-01-15 | 2012-07-17 | Applied Materials, Inc. | Temperature measurement and control of wafer support in thermal processing chamber |
JP5169046B2 (en) * | 2007-07-20 | 2013-03-27 | ウシオ電機株式会社 | Light irradiation type heat treatment equipment |
US8111978B2 (en) * | 2008-07-11 | 2012-02-07 | Applied Materials, Inc. | Rapid thermal processing chamber with shower head |
US20100101729A1 (en) * | 2008-10-28 | 2010-04-29 | Applied Materials, Inc. | Process kit having reduced erosion sensitivity |
CN201415063Y (en) * | 2009-05-25 | 2010-03-03 | 林华龙 | A three-dimensional plastic diamond of split toy |
JP5443096B2 (en) * | 2009-08-12 | 2014-03-19 | 株式会社ニューフレアテクノロジー | Semiconductor manufacturing apparatus and semiconductor manufacturing method |
US8744250B2 (en) | 2011-02-23 | 2014-06-03 | Applied Materials, Inc. | Edge ring for a thermal processing chamber |
US8979087B2 (en) | 2011-07-29 | 2015-03-17 | Applied Materials, Inc. | Substrate supporting edge ring with coating for improved soak performance |
JP6026124B2 (en) * | 2012-03-28 | 2016-11-16 | 株式会社Screenホールディングス | Heat treatment equipment |
US9330949B2 (en) | 2012-03-27 | 2016-05-03 | SCREEN Holdings Co., Ltd. | Heat treatment apparatus for heating substrate by irradiating substrate with flash of light |
SG11201406137VA (en) * | 2012-05-18 | 2014-11-27 | Veeco Instr Inc | Rotating disk reactor with ferrofluid seal for chemical vapor deposition |
WO2014065955A1 (en) * | 2012-10-24 | 2014-05-01 | Applied Materials, Inc. | Minimal contact edge ring for rapid thermal processing |
US9385004B2 (en) | 2013-08-15 | 2016-07-05 | Applied Materials, Inc. | Support cylinder for thermal processing chamber |
US9330955B2 (en) * | 2013-12-31 | 2016-05-03 | Applied Materials, Inc. | Support ring with masked edge |
JP6298403B2 (en) * | 2014-12-26 | 2018-03-20 | グローバルウェーハズ・ジャパン株式会社 | Support jig for silicon wafer heat treatment |
CN108538744B (en) * | 2017-03-01 | 2021-03-02 | 北京北方华创微电子装备有限公司 | Chuck device and semiconductor processing equipment |
WO2019177837A1 (en) * | 2018-03-13 | 2019-09-19 | Applied Materials, Inc | Support ring with plasma spray coating |
KR102406942B1 (en) | 2019-09-16 | 2022-06-10 | 에이피시스템 주식회사 | Edge ring and heat treatment apparatus having the same |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5458688A (en) * | 1993-03-09 | 1995-10-17 | Tokyo Electron Kabushiki Kaisha | Heat treatment boat |
EP0713245A2 (en) * | 1994-11-17 | 1996-05-22 | Shin-Etsu Handotai Company Limited | A heat treatment jig for semiconductor wafers and a method for treating a surface of the same |
EP0840358A2 (en) * | 1996-11-05 | 1998-05-06 | Applied Materials, Inc. | Sloped substrate support |
Family Cites Families (23)
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US1850684A (en) | 1932-03-22 | Drive ring and method of jtaxing the same | ||
US698031A (en) | 1901-11-25 | 1902-04-22 | Naething Leslie Tiling Company | Tile. |
US3622427A (en) | 1970-04-28 | 1971-11-23 | Grace W R & Co | Pad for testing the seal of a can |
JPS6149416A (en) * | 1984-08-17 | 1986-03-11 | Hoxan Corp | Coating method of carbon tray for manufacturing polycrystalline silicon wafer |
JPS63153388A (en) | 1986-08-23 | 1988-06-25 | 東レ株式会社 | Heat treating furnace |
US5323035A (en) * | 1992-10-13 | 1994-06-21 | Glenn Leedy | Interconnection structure for integrated circuits and method for making same |
JPH01297141A (en) * | 1988-05-25 | 1989-11-30 | Canon Inc | Microwave plasma processing device |
JPH02291118A (en) * | 1988-12-30 | 1990-11-30 | Ag Processing Technol Inc | Method and apparatus for heating wafer uniformly by utilizing radiant heat source for heating surface and circumference of wafer |
JP3204699B2 (en) | 1990-11-30 | 2001-09-04 | 株式会社東芝 | Heat treatment equipment |
US5146481A (en) * | 1991-06-25 | 1992-09-08 | Diwakar Garg | Diamond membranes for X-ray lithography |
JP3234617B2 (en) | 1991-12-16 | 2001-12-04 | 東京エレクトロン株式会社 | Substrate support for heat treatment equipment |
JPH06204153A (en) * | 1993-01-06 | 1994-07-22 | Nippon Precision Circuits Kk | Boat for processing semiconductor wafer |
JP3348936B2 (en) | 1993-10-21 | 2002-11-20 | 東京エレクトロン株式会社 | Vertical heat treatment equipment |
US5393647A (en) * | 1993-07-16 | 1995-02-28 | Armand P. Neukermans | Method of making superhard tips for micro-probe microscopy and field emission |
JPH0758041A (en) * | 1993-08-20 | 1995-03-03 | Toshiba Ceramics Co Ltd | Susceptor |
US5556275A (en) | 1993-09-30 | 1996-09-17 | Tokyo Electron Limited | Heat treatment apparatus |
US5755511A (en) * | 1994-12-19 | 1998-05-26 | Applied Materials, Inc. | Method and apparatus for measuring substrate temperatures |
US5660472A (en) * | 1994-12-19 | 1997-08-26 | Applied Materials, Inc. | Method and apparatus for measuring substrate temperatures |
US5836150A (en) * | 1995-05-31 | 1998-11-17 | The United States Of America As Represented By The United States Department Of Energy | Micro thrust and heat generator |
JPH09199437A (en) * | 1996-01-12 | 1997-07-31 | Sumitomo Sitix Corp | Semiconductor wafer supporting device |
US5863170A (en) * | 1996-04-16 | 1999-01-26 | Gasonics International | Modular process system |
JP2777643B2 (en) * | 1996-09-30 | 1998-07-23 | 株式会社日立製作所 | Semiconductor wafer heat treatment apparatus and semiconductor wafer heat treatment apparatus |
US5770324A (en) * | 1997-03-03 | 1998-06-23 | Saint-Gobain Industrial Ceramics, Inc. | Method of using a hot pressed silicon carbide dummy wafer |
-
1998
- 1998-02-11 US US09/022,134 patent/US6200388B1/en not_active Expired - Lifetime
-
1999
- 1999-02-08 EP EP99905887A patent/EP1055252A1/en not_active Withdrawn
- 1999-02-08 KR KR1020007008831A patent/KR20010072545A/en not_active Application Discontinuation
- 1999-02-08 WO PCT/US1999/002742 patent/WO1999041773A1/en not_active Application Discontinuation
- 1999-02-08 JP JP2000531865A patent/JP4554075B2/en not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5458688A (en) * | 1993-03-09 | 1995-10-17 | Tokyo Electron Kabushiki Kaisha | Heat treatment boat |
EP0713245A2 (en) * | 1994-11-17 | 1996-05-22 | Shin-Etsu Handotai Company Limited | A heat treatment jig for semiconductor wafers and a method for treating a surface of the same |
EP0840358A2 (en) * | 1996-11-05 | 1998-05-06 | Applied Materials, Inc. | Sloped substrate support |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002222768A (en) * | 2001-01-24 | 2002-08-09 | Ibiden Co Ltd | Jig for semiconductor |
WO2005056873A1 (en) * | 2003-12-05 | 2005-06-23 | Morgan Advanced Ceramics, Inc. | Free-standing silicon carbide articles formed by chemical vapor deposition and methods for their manufacture |
US7829183B2 (en) | 2003-12-05 | 2010-11-09 | Morgan Advanced Ceramics, Inc. | Free-standing silicon carbide articles formed by chemical vapor deposition and methods for their manufacture |
US8114505B2 (en) | 2003-12-05 | 2012-02-14 | Morgan Advanced Ceramics, Inc. | Free-standing silicon carbide articles formed by chemical vapor deposition and methods for their manufacture |
KR101273209B1 (en) * | 2003-12-05 | 2013-06-12 | 모간 어드밴스드 세라믹스, 인코포레이티드 | Free-standing silicon carbide articles formed by chemical vapor deposition and methods for their manufacture |
WO2012092008A1 (en) * | 2010-12-30 | 2012-07-05 | Veeco Instruments Inc. | Wafer carrier with selective control of emissivity |
US11702748B2 (en) | 2017-03-03 | 2023-07-18 | Lam Research Corporation | Wafer level uniformity control in remote plasma film deposition |
TWI739392B (en) * | 2019-04-16 | 2021-09-11 | 南韓商東海炭素股份有限公司 | SiC EDGE RING |
Also Published As
Publication number | Publication date |
---|---|
KR20010072545A (en) | 2001-07-31 |
JP2002503884A (en) | 2002-02-05 |
JP4554075B2 (en) | 2010-09-29 |
US6200388B1 (en) | 2001-03-13 |
EP1055252A1 (en) | 2000-11-29 |
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