WO1999041423A3 - Plasma processes for depositing low dielectric constant films - Google Patents

Plasma processes for depositing low dielectric constant films Download PDF

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Publication number
WO1999041423A3
WO1999041423A3 PCT/US1999/002903 US9902903W WO9941423A3 WO 1999041423 A3 WO1999041423 A3 WO 1999041423A3 US 9902903 W US9902903 W US 9902903W WO 9941423 A3 WO9941423 A3 WO 9941423A3
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WO
WIPO (PCT)
Prior art keywords
film
power level
oxidized organosilane
organosiloxane
constant
Prior art date
Application number
PCT/US1999/002903
Other languages
French (fr)
Other versions
WO1999041423A2 (en
Inventor
David Cheung
Wai-Fan Yau
Robert P Mandal
Shin-Puu Jeng
Kuo-Wei Liu
Yung-Cheng Lu
Mike Barnes
Ralf B Willecke
Farhad Moghadam
Tetsuya Ishikawa
Tze Poon
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/021,788 external-priority patent/US6054379A/en
Priority claimed from US09/162,915 external-priority patent/US6287990B1/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to JP2000531599A priority Critical patent/JP4447772B2/en
Priority to EP99906897A priority patent/EP1055012B1/en
Priority to DE1999629771 priority patent/DE69929771T2/en
Publication of WO1999041423A2 publication Critical patent/WO1999041423A2/en
Publication of WO1999041423A3 publication Critical patent/WO1999041423A3/en

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    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76835—Combinations of two or more different dielectric layers having a low dielectric constant
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    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
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    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
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    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31604—Deposition from a gas or vapour
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    • H01L2221/10—Applying interconnections to be used for carrying current between separate components within a device
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    • H01L2221/1031—Dual damascene by forming vias in the via-level dielectric prior to deposition of the trench-level dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24926—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including ceramic, glass, porcelain or quartz layer
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    • Y10T428/31652—Of asbestos
    • Y10T428/31663—As siloxane, silicone or silane

Abstract

A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10W to about 200W or a pulsed RF power level from about 20W to about 500W. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organosilane film is produced by reaction of methylsilane, CH3SiH3, dimethylsilane, (CH3)2SiH2, or 1,1,3,3-tetramethyl-disiloxane, (CH3)2-SiH-O-SiH-(CH3)2, and nitrous oxide, N2O, at a constant RF power level from about 10W to about 150W, or a pulsed RF power level from about 20W to about 250W during 10 % to 30 % of the duty cycle.
PCT/US1999/002903 1998-02-11 1999-02-10 Plasma processes for depositing low dielectric constant films WO1999041423A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2000531599A JP4447772B2 (en) 1998-02-11 1999-02-10 Plasma processing method for depositing low dielectric constant films
EP99906897A EP1055012B1 (en) 1998-02-11 1999-02-10 Plasma processes for depositing low dielectric constant films
DE1999629771 DE69929771T2 (en) 1998-02-11 1999-02-10 PLASMA DEPOSITION PROCESS OF DIELECTRIC FILMS WITH LOW DIELECTRIC CONSTANT

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
US09/021,788 US6054379A (en) 1998-02-11 1998-02-11 Method of depositing a low k dielectric with organo silane
US09/021,788 1998-02-11
US09/114,682 US6072227A (en) 1998-02-11 1998-07-13 Low power method of depositing a low k dielectric with organo silane
US09/114,682 1998-07-13
US09/162,915 US6287990B1 (en) 1998-02-11 1998-09-29 CVD plasma assisted low dielectric constant films
US09/162,915 1998-09-29
US09/185,555 1998-11-04
US09/185,555 US6303523B2 (en) 1998-02-11 1998-11-04 Plasma processes for depositing low dielectric constant films

Publications (2)

Publication Number Publication Date
WO1999041423A2 WO1999041423A2 (en) 1999-08-19
WO1999041423A3 true WO1999041423A3 (en) 1999-10-28

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PCT/US1999/002903 WO1999041423A2 (en) 1998-02-11 1999-02-10 Plasma processes for depositing low dielectric constant films

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US (8) US6303523B2 (en)
EP (1) EP1055012B1 (en)
JP (1) JP4447772B2 (en)
DE (1) DE69929771T2 (en)
TW (1) TW408369B (en)
WO (1) WO1999041423A2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6759325B2 (en) 2000-05-15 2004-07-06 Asm Microchemistry Oy Sealing porous structures
US8846522B2 (en) 2006-04-18 2014-09-30 Air Products And Chemicals, Inc. Materials and methods of forming controlled void
US8921205B2 (en) 2002-08-14 2014-12-30 Asm America, Inc. Deposition of amorphous silicon-containing films
US9312131B2 (en) 2006-06-07 2016-04-12 Asm America, Inc. Selective epitaxial formation of semiconductive films

Families Citing this family (626)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR900003245B1 (en) * 1986-05-14 1990-05-12 삼성전자 주식회사 Driving apparatus of video tape recorder
US6054379A (en) 1998-02-11 2000-04-25 Applied Materials, Inc. Method of depositing a low k dielectric with organo silane
US6340435B1 (en) 1998-02-11 2002-01-22 Applied Materials, Inc. Integrated low K dielectrics and etch stops
US6287990B1 (en) 1998-02-11 2001-09-11 Applied Materials, Inc. CVD plasma assisted low dielectric constant films
US6413583B1 (en) 1998-02-11 2002-07-02 Applied Materials, Inc. Formation of a liquid-like silica layer by reaction of an organosilicon compound and a hydroxyl forming compound
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