WO1999039413A3 - Ii-iv lasers having index-guided structures - Google Patents
Ii-iv lasers having index-guided structures Download PDFInfo
- Publication number
- WO1999039413A3 WO1999039413A3 PCT/IB1999/000095 IB9900095W WO9939413A3 WO 1999039413 A3 WO1999039413 A3 WO 1999039413A3 IB 9900095 W IB9900095 W IB 9900095W WO 9939413 A3 WO9939413 A3 WO 9939413A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- lasers
- index
- portions
- active layer
- mesa
- Prior art date
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/28—Materials of the light emitting region containing only elements of group II and group VI of the periodic system
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0083—Processes for devices with an active region comprising only II-VI compounds
- H01L33/0087—Processes for devices with an active region comprising only II-VI compounds with a substrate not being a II-VI compound
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/327—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIBVI compounds, e.g. ZnCdSe-laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/347—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIBVI compounds, e.g. ZnCdSe- laser
Abstract
A buried-ridge II-VI laser diode has a mesa structure with portions of the active layer extending laterally from the sidewalls of the mesa and portions of the substrate extending laterally from the edges of the active layer. The sidewalls of the mesa and the extending portions of the active layer and of the substrate are covered with a layer of insulating material.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US1471598A | 1998-01-28 | 1998-01-28 | |
US09/014,715 | 1998-01-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO1999039413A2 WO1999039413A2 (en) | 1999-08-05 |
WO1999039413A3 true WO1999039413A3 (en) | 1999-09-16 |
Family
ID=21767243
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/IB1999/000095 WO1999039413A2 (en) | 1998-01-28 | 1999-01-25 | Ii-iv lasers having index-guided structures |
Country Status (1)
Country | Link |
---|---|
WO (1) | WO1999039413A2 (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SE0200751D0 (en) * | 2002-03-13 | 2002-03-13 | Optillion Ab | Method of manufacturing a photonic device and photonic device |
SE0200750D0 (en) * | 2002-03-13 | 2002-03-13 | Optillion Ab | Method for manufacturing photonic device and a photonic device |
WO2021251524A1 (en) * | 2020-06-11 | 2021-12-16 | 엘지전자 주식회사 | Semiconductor light-emitting device and display device using same |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5148267A (en) * | 1989-09-08 | 1992-09-15 | Hewlett-Packard Company | Double heterostructure step recovery diode with internal drift field |
EP0637862A2 (en) * | 1993-08-05 | 1995-02-08 | Hitachi, Ltd. | Semiconductor laser device and method of fabricating the laser device |
US5404027A (en) * | 1991-05-15 | 1995-04-04 | Minnesota Mining & Manufacturing Compay | Buried ridge II-VI laser diode |
US5519722A (en) * | 1993-12-28 | 1996-05-21 | Nec Corporation | II-VI compound semiconductor laser with burying layers |
US5619520A (en) * | 1994-09-09 | 1997-04-08 | Matsushita Electric Industrial Co., Ltd. | Semiconductor laser |
US5834330A (en) * | 1996-10-07 | 1998-11-10 | Minnesota Mining And Manufacturing Company | Selective etch method for II-VI semiconductors |
-
1999
- 1999-01-25 WO PCT/IB1999/000095 patent/WO1999039413A2/en active Application Filing
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5148267A (en) * | 1989-09-08 | 1992-09-15 | Hewlett-Packard Company | Double heterostructure step recovery diode with internal drift field |
US5404027A (en) * | 1991-05-15 | 1995-04-04 | Minnesota Mining & Manufacturing Compay | Buried ridge II-VI laser diode |
EP0637862A2 (en) * | 1993-08-05 | 1995-02-08 | Hitachi, Ltd. | Semiconductor laser device and method of fabricating the laser device |
US5519722A (en) * | 1993-12-28 | 1996-05-21 | Nec Corporation | II-VI compound semiconductor laser with burying layers |
US5619520A (en) * | 1994-09-09 | 1997-04-08 | Matsushita Electric Industrial Co., Ltd. | Semiconductor laser |
US5834330A (en) * | 1996-10-07 | 1998-11-10 | Minnesota Mining And Manufacturing Company | Selective etch method for II-VI semiconductors |
Non-Patent Citations (1)
Title |
---|
APPL. PHYS. LETT., Volume 63, No. 17, October 1993, M.A. HAASE, "Low-Threshold Buried-Ridge II-VI Laser Diodes". * |
Also Published As
Publication number | Publication date |
---|---|
WO1999039413A2 (en) | 1999-08-05 |
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