WO1999039413A3 - Ii-iv lasers having index-guided structures - Google Patents

Ii-iv lasers having index-guided structures Download PDF

Info

Publication number
WO1999039413A3
WO1999039413A3 PCT/IB1999/000095 IB9900095W WO9939413A3 WO 1999039413 A3 WO1999039413 A3 WO 1999039413A3 IB 9900095 W IB9900095 W IB 9900095W WO 9939413 A3 WO9939413 A3 WO 9939413A3
Authority
WO
WIPO (PCT)
Prior art keywords
lasers
index
portions
active layer
mesa
Prior art date
Application number
PCT/IB1999/000095
Other languages
French (fr)
Other versions
WO1999039413A2 (en
Inventor
Kevin W Haberern
Roijen Raymond Van
Sharon J Flahmholtz
Paul F Baude
Michael A Haase
Greg M Halugein
Original Assignee
Koninkl Philips Electronics Nv
Philips Svenska Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Electronics Nv, Philips Svenska Ab filed Critical Koninkl Philips Electronics Nv
Publication of WO1999039413A2 publication Critical patent/WO1999039413A2/en
Publication of WO1999039413A3 publication Critical patent/WO1999039413A3/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26Materials of the light emitting region
    • H01L33/28Materials of the light emitting region containing only elements of group II and group VI of the periodic system
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00Nanooptics, e.g. quantum optics or photonic crystals
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005Processes
    • H01L33/0083Processes for devices with an active region comprising only II-VI compounds
    • H01L33/0087Processes for devices with an active region comprising only II-VI compounds with a substrate not being a II-VI compound
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/20Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227Buried mesa structure ; Striped active layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/30Structure or shape of the active region; Materials used for the active region
    • H01S5/32Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/327Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIBVI compounds, e.g. ZnCdSe-laser
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/04Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042Electrical excitation ; Circuits therefor
    • H01S5/0421Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/20Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227Buried mesa structure ; Striped active layer
    • H01S5/2275Buried mesa structure ; Striped active layer mesa created by etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/30Structure or shape of the active region; Materials used for the active region
    • H01S5/34Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/347Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIBVI compounds, e.g. ZnCdSe- laser

Abstract

A buried-ridge II-VI laser diode has a mesa structure with portions of the active layer extending laterally from the sidewalls of the mesa and portions of the substrate extending laterally from the edges of the active layer. The sidewalls of the mesa and the extending portions of the active layer and of the substrate are covered with a layer of insulating material.
PCT/IB1999/000095 1998-01-28 1999-01-25 Ii-iv lasers having index-guided structures WO1999039413A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US1471598A 1998-01-28 1998-01-28
US09/014,715 1998-01-28

Publications (2)

Publication Number Publication Date
WO1999039413A2 WO1999039413A2 (en) 1999-08-05
WO1999039413A3 true WO1999039413A3 (en) 1999-09-16

Family

ID=21767243

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB1999/000095 WO1999039413A2 (en) 1998-01-28 1999-01-25 Ii-iv lasers having index-guided structures

Country Status (1)

Country Link
WO (1) WO1999039413A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE0200751D0 (en) * 2002-03-13 2002-03-13 Optillion Ab Method of manufacturing a photonic device and photonic device
SE0200750D0 (en) * 2002-03-13 2002-03-13 Optillion Ab Method for manufacturing photonic device and a photonic device
WO2021251524A1 (en) * 2020-06-11 2021-12-16 엘지전자 주식회사 Semiconductor light-emitting device and display device using same

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5148267A (en) * 1989-09-08 1992-09-15 Hewlett-Packard Company Double heterostructure step recovery diode with internal drift field
EP0637862A2 (en) * 1993-08-05 1995-02-08 Hitachi, Ltd. Semiconductor laser device and method of fabricating the laser device
US5404027A (en) * 1991-05-15 1995-04-04 Minnesota Mining & Manufacturing Compay Buried ridge II-VI laser diode
US5519722A (en) * 1993-12-28 1996-05-21 Nec Corporation II-VI compound semiconductor laser with burying layers
US5619520A (en) * 1994-09-09 1997-04-08 Matsushita Electric Industrial Co., Ltd. Semiconductor laser
US5834330A (en) * 1996-10-07 1998-11-10 Minnesota Mining And Manufacturing Company Selective etch method for II-VI semiconductors

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5148267A (en) * 1989-09-08 1992-09-15 Hewlett-Packard Company Double heterostructure step recovery diode with internal drift field
US5404027A (en) * 1991-05-15 1995-04-04 Minnesota Mining & Manufacturing Compay Buried ridge II-VI laser diode
EP0637862A2 (en) * 1993-08-05 1995-02-08 Hitachi, Ltd. Semiconductor laser device and method of fabricating the laser device
US5519722A (en) * 1993-12-28 1996-05-21 Nec Corporation II-VI compound semiconductor laser with burying layers
US5619520A (en) * 1994-09-09 1997-04-08 Matsushita Electric Industrial Co., Ltd. Semiconductor laser
US5834330A (en) * 1996-10-07 1998-11-10 Minnesota Mining And Manufacturing Company Selective etch method for II-VI semiconductors

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
APPL. PHYS. LETT., Volume 63, No. 17, October 1993, M.A. HAASE, "Low-Threshold Buried-Ridge II-VI Laser Diodes". *

Also Published As

Publication number Publication date
WO1999039413A2 (en) 1999-08-05

Similar Documents

Publication Publication Date Title
TW373362B (en) Semiconductor substrate and semiconductor device
WO2008013712A8 (en) Semiconductor laser micro-heating element structure
WO2002045217A3 (en) Versatile method and system for single mode vcsels
EP0971465A4 (en) Compound semiconductor laser
WO1999039371A3 (en) METHOD FOR PRODUCING A STRUCTURE SUCH AS AN INSULATOR SEMICONDUCTOR AND IN PARTICULAR SiCOI
CA2257888A1 (en) Current confinement for a vertical cavity surface emitting laser
CA2084820A1 (en) Buried heterostructure lasers using mocvd growth over patterned substrates
EP1006629A3 (en) Compound semiconductor light emitting device
WO1999039413A3 (en) Ii-iv lasers having index-guided structures
EP1233486A3 (en) Semiconductor optical device and method for fabricating same
EP1469569A3 (en) Semiconductor laser diode and semiconductor laser diode assembly containing the same
WO2002031863A3 (en) A single frequency laser
WO2001050553A3 (en) Stripe laser diode element
EP1081815A3 (en) Semiconductor laser element having resonator surface coated with oxygen gettering layer and high thermal conductivity layer
EP1037343A3 (en) Distributed feedback semiconductor laser
WO2006102686A3 (en) High power diode lasers
WO2003073562A3 (en) GaAs/AI(Ga)As DISTRIBUTED BRAGG REFLECTOR ON InP
EP1120872A4 (en) Semiconductor laser
WO2002055419A3 (en) Adhesive tape for flying reel changes
US6075802A (en) Lateral confinement laser
SE9702629D0 (en) Laser diode of the type with buried heterostructure
EP0828324A3 (en) Semiconductor laser device
WO2003005514A1 (en) Semiconductor laser device, semiconductor laser module, and optical fiber amplifier using semiconductor laser module
EP1263099A3 (en) Semiconductor laser
CA2112319A1 (en) Semiconductor Laser Having an AlGaInP Cladding Layer

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): JP

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE

AK Designated states

Kind code of ref document: A3

Designated state(s): JP

AL Designated countries for regional patents

Kind code of ref document: A3

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE

121 Ep: the epo has been informed by wipo that ep was designated in this application
122 Ep: pct application non-entry in european phase