WO1999028955A3 - Chemical vapor deposition of titanium on a wafer comprising an in-situ precleaning step - Google Patents

Chemical vapor deposition of titanium on a wafer comprising an in-situ precleaning step Download PDF

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Publication number
WO1999028955A3
WO1999028955A3 PCT/US1998/023740 US9823740W WO9928955A3 WO 1999028955 A3 WO1999028955 A3 WO 1999028955A3 US 9823740 W US9823740 W US 9823740W WO 9928955 A3 WO9928955 A3 WO 9928955A3
Authority
WO
WIPO (PCT)
Prior art keywords
deposition
stage
titanium
gas
substrate
Prior art date
Application number
PCT/US1998/023740
Other languages
French (fr)
Other versions
WO1999028955A2 (en
Inventor
Ramanujapuram A Srinivas
Frederick C Wu
Anand Vasudev
Mei Chang
Lawrence D Buckley Jr
Li Wu
Brian P Boyle
Shunichi Hizume
Patricia Jennings
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to JP2000523700A priority Critical patent/JP4511721B2/en
Priority to KR1020007006015A priority patent/KR20010032726A/en
Publication of WO1999028955A2 publication Critical patent/WO1999028955A2/en
Publication of WO1999028955A3 publication Critical patent/WO1999028955A3/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
    • C23C16/14—Deposition of only one other metal element
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • C23C16/0245—Pretreatment of the material to be coated by cleaning or etching by etching with a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
    • H01L21/76855—After-treatment introducing at least one additional element into the layer
    • H01L21/76856—After-treatment introducing at least one additional element into the layer by treatment in plasmas or gaseous environments, e.g. nitriding a refractory metal liner
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

GB9803672e step chemical vapor deposition process for depositing a titanium film over a substrate. A first step of the deposition process includes a plasma pretreatment step in which a pretreatment gas including a hydrogen-containing gas and an inert gas are flowed into a deposition zone of a substrate processing chamber. During this first deposition stage, a plasma is formed from the pretreatment gas and maintained for at least about 5 seconds in order to etch any dielectric material left in the contact area of the substrate and clean the contact area prior to deposition of the titanium layer. Next, during a second deposition stage after the first stage, a titanium-containing source and a reduction agent are introduced into the deposition zone and the plasma formed in the first stage is maintained in order to deposit the titanium layer over the substrate. In a preferred embodiment, the hydrogen-containing source included in the pretreatment gas and the reduction agent in the process gas of the second deposition stage are the same continuous flow of H2.
PCT/US1998/023740 1997-12-02 1998-11-06 Chemical vapor deposition of titanium on a wafer comprising an in-situ precleaning step WO1999028955A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2000523700A JP4511721B2 (en) 1997-12-02 1998-11-06 Titanium chemical vapor deposition on wafer including in situ pre-cleaning step
KR1020007006015A KR20010032726A (en) 1997-12-02 1998-11-06 Chemical vapor deposition of titanium on a wafer comprising an in-situ precleaning step

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US98287297A 1997-12-02 1997-12-02
US08/982,872 1997-12-02

Publications (2)

Publication Number Publication Date
WO1999028955A2 WO1999028955A2 (en) 1999-06-10
WO1999028955A3 true WO1999028955A3 (en) 1999-09-16

Family

ID=25529591

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1998/023740 WO1999028955A2 (en) 1997-12-02 1998-11-06 Chemical vapor deposition of titanium on a wafer comprising an in-situ precleaning step

Country Status (4)

Country Link
JP (1) JP4511721B2 (en)
KR (1) KR20010032726A (en)
TW (1) TW507015B (en)
WO (1) WO1999028955A2 (en)

Families Citing this family (16)

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Publication number Priority date Publication date Assignee Title
US6355571B1 (en) * 1998-11-17 2002-03-12 Applied Materials, Inc. Method and apparatus for reducing copper oxidation and contamination in a semiconductor device
WO2001007677A1 (en) * 1999-07-26 2001-02-01 Tokyo Electron Limited Method and apparatus for manufacturing semiconductor device
US7169704B2 (en) 2002-06-21 2007-01-30 Samsung Electronics Co., Ltd. Method of cleaning a surface of a water in connection with forming a barrier layer of a semiconductor device
KR100447284B1 (en) 2002-07-19 2004-09-07 삼성전자주식회사 Method of cleaning chemical vapor deposition chamber
KR100703650B1 (en) * 2005-11-30 2007-04-06 주식회사 아이피에스 Apparatus for depositing thin film on wafer
US7341950B2 (en) 2005-12-07 2008-03-11 Infineon Technologies Ag Method for controlling a thickness of a first layer and method for adjusting the thickness of different first layers
CN101310040B (en) * 2006-02-24 2011-08-17 东京毅力科创株式会社 Manufacturing method of ti system film
US7790635B2 (en) 2006-12-14 2010-09-07 Applied Materials, Inc. Method to increase the compressive stress of PECVD dielectric films
CN102652186A (en) * 2009-12-22 2012-08-29 应用材料公司 PECVD multi-step processing with continuous plasma
US20130075262A1 (en) * 2011-09-22 2013-03-28 Catcher Technology Co., Ltd. Method of forming anodic titanium oxide layers having dual-color appearance and article having the same
JP6284786B2 (en) * 2014-02-27 2018-02-28 東京エレクトロン株式会社 Cleaning method for plasma processing apparatus
CN109920717B (en) * 2019-03-08 2022-06-17 拓荆科技股份有限公司 Wafer processing device
KR102141547B1 (en) * 2019-09-25 2020-09-14 솔브레인 주식회사 Method for forming thin film
KR102156663B1 (en) * 2019-09-25 2020-09-21 솔브레인 주식회사 Method for forming thin film
KR20220167017A (en) * 2021-06-11 2022-12-20 주성엔지니어링(주) Method for forming a barrier layer
KR102578955B1 (en) * 2023-02-08 2023-09-15 초이스테크닉스 주식회사 Female connecter for electrical wiring of a chemical vapor deposition apparatus

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Also Published As

Publication number Publication date
JP2001525613A (en) 2001-12-11
JP4511721B2 (en) 2010-07-28
TW507015B (en) 2002-10-21
KR20010032726A (en) 2001-04-25
WO1999028955A2 (en) 1999-06-10

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