WO1999026291A3 - Semiconductor component and manufacturing method for semiconductor components - Google Patents
Semiconductor component and manufacturing method for semiconductor components Download PDFInfo
- Publication number
- WO1999026291A3 WO1999026291A3 PCT/SE1998/002063 SE9802063W WO9926291A3 WO 1999026291 A3 WO1999026291 A3 WO 1999026291A3 SE 9802063 W SE9802063 W SE 9802063W WO 9926291 A3 WO9926291 A3 WO 9926291A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- semiconductor
- manufacturing
- acceptor
- semiconductor component
- type impurities
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
- H01L21/76283—Lateral isolation by refilling of trenches with dielectric material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
- H01L21/76286—Lateral isolation by refilling of trenches with polycristalline material
Abstract
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU12678/99A AU1267899A (en) | 1997-11-17 | 1998-11-16 | Semiconductor component and manufacturing method for semiconductor components |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE9704209A SE9704209L (en) | 1997-11-17 | 1997-11-17 | Semiconductor components and manufacturing process for semiconductor components |
SE9704209-7 | 1997-11-17 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO1999026291A2 WO1999026291A2 (en) | 1999-05-27 |
WO1999026291A3 true WO1999026291A3 (en) | 1999-08-05 |
Family
ID=20409013
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/SE1998/002063 WO1999026291A2 (en) | 1997-11-17 | 1998-11-16 | Semiconductor component and manufacturing method for semiconductor components |
Country Status (4)
Country | Link |
---|---|
AU (1) | AU1267899A (en) |
SE (1) | SE9704209L (en) |
TW (1) | TW396434B (en) |
WO (1) | WO1999026291A2 (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000353797A (en) * | 1999-06-11 | 2000-12-19 | Mitsubishi Electric Corp | Semiconductor wafer and manufacture thereof |
US20020140030A1 (en) * | 2001-03-30 | 2002-10-03 | Mandelman Jack A. | SOI devices with integrated gettering structure |
US6958264B1 (en) | 2001-04-03 | 2005-10-25 | Advanced Micro Devices, Inc. | Scribe lane for gettering of contaminants on SOI wafers and gettering method |
JP2004172362A (en) * | 2002-11-20 | 2004-06-17 | Hyogo Prefecture | Impurity removing method in semiconductor wafer, the semiconductor wafer, and semiconductor device |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5110752A (en) * | 1991-07-10 | 1992-05-05 | Industrial Technology Research Institute | Roughened polysilicon surface capacitor electrode plate for high denity dram |
US5430315A (en) * | 1993-07-22 | 1995-07-04 | Rumennik; Vladimir | Bi-directional power trench MOS field effect transistor having low on-state resistance and low leakage current |
JPH07273121A (en) * | 1994-03-31 | 1995-10-20 | Toshiba Corp | Fabrication of semiconductor device |
US5478758A (en) * | 1994-06-03 | 1995-12-26 | At&T Corp. | Method of making a getterer for multi-layer wafers |
US5646053A (en) * | 1995-12-20 | 1997-07-08 | International Business Machines Corporation | Method and structure for front-side gettering of silicon-on-insulator substrates |
-
1997
- 1997-11-17 SE SE9704209A patent/SE9704209L/en not_active Application Discontinuation
-
1998
- 1998-01-20 TW TW87100709A patent/TW396434B/en active
- 1998-11-16 WO PCT/SE1998/002063 patent/WO1999026291A2/en active Application Filing
- 1998-11-16 AU AU12678/99A patent/AU1267899A/en not_active Abandoned
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5110752A (en) * | 1991-07-10 | 1992-05-05 | Industrial Technology Research Institute | Roughened polysilicon surface capacitor electrode plate for high denity dram |
US5430315A (en) * | 1993-07-22 | 1995-07-04 | Rumennik; Vladimir | Bi-directional power trench MOS field effect transistor having low on-state resistance and low leakage current |
JPH07273121A (en) * | 1994-03-31 | 1995-10-20 | Toshiba Corp | Fabrication of semiconductor device |
US5478758A (en) * | 1994-06-03 | 1995-12-26 | At&T Corp. | Method of making a getterer for multi-layer wafers |
US5646053A (en) * | 1995-12-20 | 1997-07-08 | International Business Machines Corporation | Method and structure for front-side gettering of silicon-on-insulator substrates |
Also Published As
Publication number | Publication date |
---|---|
WO1999026291A2 (en) | 1999-05-27 |
TW396434B (en) | 2000-07-01 |
SE9704209D0 (en) | 1997-11-17 |
SE9704209L (en) | 1999-05-18 |
AU1267899A (en) | 1999-06-07 |
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