WO1999019532A1 - Method of chemical vapor deposition of metal films - Google Patents
Method of chemical vapor deposition of metal films Download PDFInfo
- Publication number
- WO1999019532A1 WO1999019532A1 PCT/US1998/021113 US9821113W WO9919532A1 WO 1999019532 A1 WO1999019532 A1 WO 1999019532A1 US 9821113 W US9821113 W US 9821113W WO 9919532 A1 WO9919532 A1 WO 9919532A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- substrate
- film
- range
- reaction chamber
- exposing
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
- C23C16/0245—Pretreatment of the material to be coated by cleaning or etching by etching with a plasma
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
- C23C16/14—Deposition of only one other metal element
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
Definitions
- This invention relates generally to chemical vapor
- CVD chemical vapor deposition
- ohmic contacts in the circuits and between the various devices of an IC.
- a thin film of a desired metal might be applied
- substrate provides plugs of conductive material for the purpose of
- CVD chemicai vapor deposition
- Reactant gases are
- resistivity higher than about 2 ⁇ ohms-cm have less viability as a
- resistivities can replace copper. Factors that may influence film
- resistivity include film thickness, density, purity, and grain size.
- one objective of the present invention is to
- Another objective of the present invention is to provide a metal film on a substrate surface that has a low
- a further object of the present invention is to provide
- a still further object of the present invention is to
- resistivity of less than about 2 ⁇ ohm-cm.
- this invention is directed to a method of
- invention is directed to a method of depositing, on a substrate
- a copper film that has thickness of greater than about 750
- second thin metal film layer is subsequently deposited over the previously deposited film layer on the substrate surface.
- the plasma is a hydrogen/argon plasma and the film is
- FIG. 1 is a schematic of a susceptor and a substrate.
- FIG. 2 is a schematic cross-sectional view of a
- -6- typical susceptor 20 has a native oxide layer 24 on its top 26a and
- a substrate 22 is supported upon the susceptor
- the substrate 22 has as its top surface 28 a
- TiN layer 30 is, in turn, on top of a TiN layer 32 of about 500 A thick
- the reactor 45 includes a
- reaction chamber 46 which encloses a processing space 48.
- reaction chamber 46 which is shown as containing a substrate 22
- reactant gases for CVD are delivered to a susceptor 20
- a gas delivery system such as the system
- PECVD FILMS which is assigned to the Assignee of the present
- gas delivery systems contain gas-
- the showerhead 50 spreads the entering reactant gases around the processing space 48 of the reaction chamber 46
- the tmvs ligand stabilizes the precursor during its vaporization
- the reaction chamber 46 are: substrate temperature of about
- reaction pressure of about 0.5 torr to about 2.0 torr
- the reactor 45 is equipped with a plasma producing
- the apparatus 51 to expose the susceptor
- the apparatus 51 preferably includes a radio
- RF generator 52 capable of generating 450 KHz
- chamber 46 are: chamber pressure of about 1 torr; power of about
- substrate temperature of about 1 70°C.
- Copper 1 (hfac) (tmvs) is deposited in a thin layer by
- the copper film is approximately 500 A thick.
- the substrate 22 is subsequently exposed to a
- a second thin layer of copper is
- the second copper film layer is
- exposure followed by copper deposition may be used to produce a
- the susceptor 20 may be pretreated with a metal film to
Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP98952123A EP1021589B1 (en) | 1997-10-09 | 1998-10-07 | Method of chemical vapor deposition of metal films |
JP2000516079A JP4079591B2 (en) | 1997-10-09 | 1998-10-07 | Chemical vapor deposition of metal coatings |
KR1020007003774A KR100624351B1 (en) | 1997-10-09 | 1998-10-07 | Method of chemical vapor deposition of metal films |
DE69801231T DE69801231T2 (en) | 1997-10-09 | 1998-10-07 | METHOD FOR CHEMICAL VAPOR DEPOSIT OF METAL FILMS |
AU97894/98A AU9789498A (en) | 1997-10-09 | 1998-10-07 | Method of chemical vapor deposition of metal films |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/948,955 US6121140A (en) | 1997-10-09 | 1997-10-09 | Method of improving surface morphology and reducing resistivity of chemical vapor deposition-metal films |
US08/948,955 | 1997-10-09 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1999019532A1 true WO1999019532A1 (en) | 1999-04-22 |
Family
ID=25488428
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1998/021113 WO1999019532A1 (en) | 1997-10-09 | 1998-10-07 | Method of chemical vapor deposition of metal films |
Country Status (8)
Country | Link |
---|---|
US (1) | US6121140A (en) |
EP (1) | EP1021589B1 (en) |
JP (1) | JP4079591B2 (en) |
KR (1) | KR100624351B1 (en) |
AU (1) | AU9789498A (en) |
DE (1) | DE69801231T2 (en) |
TW (1) | TW432486B (en) |
WO (1) | WO1999019532A1 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8114754B2 (en) | 2009-11-18 | 2012-02-14 | S.O.I.Tec Silicon On Insulator Technologies | Methods of fabricating semiconductor structures and devices using glass bonding layers, and semiconductor structures and devices formed by such methods |
US8765508B2 (en) | 2008-08-27 | 2014-07-01 | Soitec | Methods of fabricating semiconductor structures or devices using layers of semiconductor material having selected or controlled lattice parameters |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6440494B1 (en) * | 2000-04-05 | 2002-08-27 | Tokyo Electron Limited | In-situ source synthesis for metal CVD |
KR100383759B1 (en) * | 2000-06-15 | 2003-05-14 | 주식회사 하이닉스반도체 | Method of forming a copper metal wiring in a semiconductor drvice |
KR100539274B1 (en) * | 2003-07-15 | 2005-12-27 | 삼성전자주식회사 | Method for depositing cobalt layer |
US8486192B2 (en) | 2010-09-30 | 2013-07-16 | Soitec | Thermalizing gas injectors for generating increased precursor gas, material deposition systems including such injectors, and related methods |
US8133806B1 (en) | 2010-09-30 | 2012-03-13 | S.O.I.Tec Silicon On Insulator Technologies | Systems and methods for forming semiconductor materials by atomic layer deposition |
US9023721B2 (en) | 2010-11-23 | 2015-05-05 | Soitec | Methods of forming bulk III-nitride materials on metal-nitride growth template layers, and structures formed by such methods |
FR2968830B1 (en) | 2010-12-08 | 2014-03-21 | Soitec Silicon On Insulator | IMPROVED MATRIX LAYERS FOR THE HETEROEPITAXIAL DEPOSITION OF NITRIDE III SEMICONDUCTOR MATERIALS USING HVPE PROCESSES |
FR2968678B1 (en) | 2010-12-08 | 2015-11-20 | Soitec Silicon On Insulator | METHODS OF FORMING GROUP III NITRIDE MATERIALS AND STRUCTURES FORMED THEREFROM |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0288754A2 (en) * | 1987-04-30 | 1988-11-02 | International Business Machines Corporation | High rate tungsten CVD process for stress-free films |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5628829A (en) * | 1994-06-03 | 1997-05-13 | Materials Research Corporation | Method and apparatus for low temperature deposition of CVD and PECVD films |
US5576071A (en) * | 1994-11-08 | 1996-11-19 | Micron Technology, Inc. | Method of reducing carbon incorporation into films produced by chemical vapor deposition involving organic precursor compounds |
US5773363A (en) * | 1994-11-08 | 1998-06-30 | Micron Technology, Inc. | Semiconductor processing method of making electrical contact to a node |
-
1997
- 1997-10-09 US US08/948,955 patent/US6121140A/en not_active Expired - Lifetime
-
1998
- 1998-10-07 WO PCT/US1998/021113 patent/WO1999019532A1/en active IP Right Grant
- 1998-10-07 JP JP2000516079A patent/JP4079591B2/en not_active Expired - Fee Related
- 1998-10-07 DE DE69801231T patent/DE69801231T2/en not_active Expired - Lifetime
- 1998-10-07 EP EP98952123A patent/EP1021589B1/en not_active Expired - Lifetime
- 1998-10-07 KR KR1020007003774A patent/KR100624351B1/en not_active IP Right Cessation
- 1998-10-07 AU AU97894/98A patent/AU9789498A/en not_active Abandoned
- 1998-10-12 TW TW087116727A patent/TW432486B/en not_active IP Right Cessation
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0288754A2 (en) * | 1987-04-30 | 1988-11-02 | International Business Machines Corporation | High rate tungsten CVD process for stress-free films |
Non-Patent Citations (2)
Title |
---|
"DEPOSIT AND ETCH TECHNIQUE FOR MAKING SMOOTH, LOW RESISTIVITY TUNGSTEN FILMS", RESEARCH DISCLOSURE, no. 305, 1 September 1989 (1989-09-01), pages 633, XP000070496 * |
EISENBRAUN E T ET AL: "ENHANCED GROWTH OF DEVICE-QUALITY COPPER BY HYDROGEN PLASMA-ASSISTED CHEMICAL VAPOR DEPOSITION", APPLIED PHYSICS LETTERS, vol. 60, no. 25, 22 June 1992 (1992-06-22), pages 3126 - 3128, XP000280704 * |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8765508B2 (en) | 2008-08-27 | 2014-07-01 | Soitec | Methods of fabricating semiconductor structures or devices using layers of semiconductor material having selected or controlled lattice parameters |
US9793360B2 (en) | 2008-08-27 | 2017-10-17 | Soitec | Methods of fabricating semiconductor structures or devices using layers of semiconductor material having selected or controlled lattice parameters |
US8114754B2 (en) | 2009-11-18 | 2012-02-14 | S.O.I.Tec Silicon On Insulator Technologies | Methods of fabricating semiconductor structures and devices using glass bonding layers, and semiconductor structures and devices formed by such methods |
US8461014B2 (en) | 2009-11-18 | 2013-06-11 | Soitec | Methods of fabricating semiconductor structures and devices with strained semiconductor material |
US8487295B2 (en) | 2009-11-18 | 2013-07-16 | Soitec | Semiconductor structures and devices including semiconductor material on a non-glassy bonding layer |
Also Published As
Publication number | Publication date |
---|---|
TW432486B (en) | 2001-05-01 |
US6121140A (en) | 2000-09-19 |
JP4079591B2 (en) | 2008-04-23 |
DE69801231D1 (en) | 2001-08-30 |
KR100624351B1 (en) | 2006-09-18 |
KR20010030989A (en) | 2001-04-16 |
EP1021589B1 (en) | 2001-07-25 |
EP1021589A1 (en) | 2000-07-26 |
AU9789498A (en) | 1999-05-03 |
DE69801231T2 (en) | 2001-11-08 |
JP2001520314A (en) | 2001-10-30 |
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