US6222762B1
(en)
*
|
1992-01-14 |
2001-04-24 |
Sandisk Corporation |
Multi-state memory
|
US7071060B1
(en)
*
|
1996-02-28 |
2006-07-04 |
Sandisk Corporation |
EEPROM with split gate source side infection with sidewall spacers
|
US5657332A
(en)
*
|
1992-05-20 |
1997-08-12 |
Sandisk Corporation |
Soft errors handling in EEPROM devices
|
US8171203B2
(en)
*
|
1995-07-31 |
2012-05-01 |
Micron Technology, Inc. |
Faster write operations to nonvolatile memory using FSInfo sector manipulation
|
US6268623B1
(en)
*
|
1997-03-20 |
2001-07-31 |
Altera Corporation |
Apparatus and method for margin testing single polysilicon EEPROM cells
|
US6781883B1
(en)
|
1997-03-20 |
2004-08-24 |
Altera Corporation |
Apparatus and method for margin testing single polysilicon EEPROM cells
|
JP3786521B2
(en)
*
|
1998-07-01 |
2006-06-14 |
株式会社日立製作所 |
Semiconductor integrated circuit and data processing system
|
KR100544175B1
(en)
*
|
1999-05-08 |
2006-01-23 |
삼성전자주식회사 |
Recording medium storing linking type information and method for processing defective area
|
FR2802734B1
(en)
*
|
1999-12-15 |
2002-04-26 |
St Microelectronics Sa |
METHOD FOR CORRECTING A BIT IN A BIT CHAIN
|
US6532556B1
(en)
|
2000-01-27 |
2003-03-11 |
Multi Level Memory Technology |
Data management for multi-bit-per-cell memories
|
US6426893B1
(en)
*
|
2000-02-17 |
2002-07-30 |
Sandisk Corporation |
Flash eeprom system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks
|
US6363008B1
(en)
|
2000-02-17 |
2002-03-26 |
Multi Level Memory Technology |
Multi-bit-cell non-volatile memory with maximized data capacity
|
US6662263B1
(en)
|
2000-03-03 |
2003-12-09 |
Multi Level Memory Technology |
Sectorless flash memory architecture
|
US6396744B1
(en)
|
2000-04-25 |
2002-05-28 |
Multi Level Memory Technology |
Flash memory with dynamic refresh
|
US6856568B1
(en)
|
2000-04-25 |
2005-02-15 |
Multi Level Memory Technology |
Refresh operations that change address mappings in a non-volatile memory
|
US7079422B1
(en)
|
2000-04-25 |
2006-07-18 |
Samsung Electronics Co., Ltd. |
Periodic refresh operations for non-volatile multiple-bit-per-cell memory
|
US6512263B1
(en)
*
|
2000-09-22 |
2003-01-28 |
Sandisk Corporation |
Non-volatile memory cell array having discontinuous source and drain diffusions contacted by continuous bit line conductors and methods of forming
|
US6538922B1
(en)
|
2000-09-27 |
2003-03-25 |
Sandisk Corporation |
Writable tracking cells
|
JP4663094B2
(en)
|
2000-10-13 |
2011-03-30 |
株式会社半導体エネルギー研究所 |
Semiconductor device
|
US6747892B2
(en)
*
|
2000-11-21 |
2004-06-08 |
Sandisk Corporation |
Sense amplifier for multilevel non-volatile integrated memory devices
|
US6684289B1
(en)
|
2000-11-22 |
2004-01-27 |
Sandisk Corporation |
Techniques for operating non-volatile memory systems with data sectors having different sizes than the sizes of the pages and/or blocks of the memory
|
TW577082B
(en)
*
|
2000-12-15 |
2004-02-21 |
Halo Lsi Inc |
Fast program to program verify method
|
US6466476B1
(en)
|
2001-01-18 |
2002-10-15 |
Multi Level Memory Technology |
Data coding for multi-bit-per-cell memories having variable numbers of bits per memory cell
|
US6738289B2
(en)
*
|
2001-02-26 |
2004-05-18 |
Sandisk Corporation |
Non-volatile memory with improved programming and method therefor
|
US6936887B2
(en)
*
|
2001-05-18 |
2005-08-30 |
Sandisk Corporation |
Non-volatile memory cells utilizing substrate trenches
|
US6894343B2
(en)
*
|
2001-05-18 |
2005-05-17 |
Sandisk Corporation |
Floating gate memory cells utilizing substrate trenches to scale down their size
|
US6532172B2
(en)
|
2001-05-31 |
2003-03-11 |
Sandisk Corporation |
Steering gate and bit line segmentation in non-volatile memories
|
DE10128903C2
(en)
*
|
2001-06-15 |
2003-04-24 |
Infineon Technologies Ag |
Circuit arrangement for storing digital data
|
US6762092B2
(en)
*
|
2001-08-08 |
2004-07-13 |
Sandisk Corporation |
Scalable self-aligned dual floating gate memory cell array and methods of forming the array
|
US6396740B1
(en)
*
|
2001-08-10 |
2002-05-28 |
Taiwan Semiconductor Manufacturing Company, Ltd |
Reference cell circuit for split gate flash memory
|
US6490218B1
(en)
*
|
2001-08-17 |
2002-12-03 |
Matrix Semiconductor, Inc. |
Digital memory method and system for storing multiple bit digital data
|
US6778441B2
(en)
*
|
2001-08-30 |
2004-08-17 |
Micron Technology, Inc. |
Integrated circuit memory device and method
|
US7068544B2
(en)
|
2001-08-30 |
2006-06-27 |
Micron Technology, Inc. |
Flash memory with low tunnel barrier interpoly insulators
|
US7042043B2
(en)
*
|
2001-08-30 |
2006-05-09 |
Micron Technology, Inc. |
Programmable array logic or memory devices with asymmetrical tunnel barriers
|
US7087954B2
(en)
*
|
2001-08-30 |
2006-08-08 |
Micron Technology, Inc. |
In service programmable logic arrays with low tunnel barrier interpoly insulators
|
US7132711B2
(en)
|
2001-08-30 |
2006-11-07 |
Micron Technology, Inc. |
Programmable array logic or memory with p-channel devices and asymmetrical tunnel barriers
|
US6963103B2
(en)
|
2001-08-30 |
2005-11-08 |
Micron Technology, Inc. |
SRAM cells with repressed floating gate memory, low tunnel barrier interpoly insulators
|
US7075829B2
(en)
*
|
2001-08-30 |
2006-07-11 |
Micron Technology, Inc. |
Programmable memory address and decode circuits with low tunnel barrier interpoly insulators
|
US6754108B2
(en)
|
2001-08-30 |
2004-06-22 |
Micron Technology, Inc. |
DRAM cells with repressed floating gate memory, low tunnel barrier interpoly insulators
|
US6985388B2
(en)
|
2001-09-17 |
2006-01-10 |
Sandisk Corporation |
Dynamic column block selection
|
US7177197B2
(en)
|
2001-09-17 |
2007-02-13 |
Sandisk Corporation |
Latched programming of memory and method
|
US7170802B2
(en)
*
|
2003-12-31 |
2007-01-30 |
Sandisk Corporation |
Flexible and area efficient column redundancy for non-volatile memories
|
US6560146B2
(en)
|
2001-09-17 |
2003-05-06 |
Sandisk Corporation |
Dynamic column block selection
|
US6741502B1
(en)
|
2001-09-17 |
2004-05-25 |
Sandisk Corporation |
Background operation for memory cells
|
US6552932B1
(en)
*
|
2001-09-21 |
2003-04-22 |
Sandisk Corporation |
Segmented metal bitlines
|
US6507530B1
(en)
*
|
2001-09-28 |
2003-01-14 |
Intel Corporation |
Weighted throttling mechanism with rank based throttling for a memory system
|
US7000063B2
(en)
|
2001-10-05 |
2006-02-14 |
Matrix Semiconductor, Inc. |
Write-many memory device and method for limiting a number of writes to the write-many memory device
|
US6925007B2
(en)
*
|
2001-10-31 |
2005-08-02 |
Sandisk Corporation |
Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements
|
US6897522B2
(en)
|
2001-10-31 |
2005-05-24 |
Sandisk Corporation |
Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements
|
US6678192B2
(en)
*
|
2001-11-02 |
2004-01-13 |
Sandisk Corporation |
Error management for writable tracking storage units
|
US6967872B2
(en)
*
|
2001-12-18 |
2005-11-22 |
Sandisk Corporation |
Method and system for programming and inhibiting multi-level, non-volatile memory cells
|
DE60134870D1
(en)
*
|
2001-12-28 |
2008-08-28 |
St Microelectronics Srl |
Programming method for a multi-bit memory cell
|
KR100455441B1
(en)
*
|
2001-12-29 |
2004-11-06 |
주식회사 하이닉스반도체 |
Sensing circuit for multi level flash memory cell
|
US6818512B1
(en)
*
|
2002-01-04 |
2004-11-16 |
Taiwan Semiconductor Manufacturing Company |
Split-gate flash with source/drain multi-sharing
|
US6638821B1
(en)
|
2002-01-10 |
2003-10-28 |
Taiwan Semiconductor Manufacturing Company |
Flash EEPROM with function of single bit erasing by an application of negative control gate selection
|
US6645813B1
(en)
*
|
2002-01-16 |
2003-11-11 |
Taiwan Semiconductor Manufacturing Company |
Flash EEPROM with function bit by bit erasing
|
US6621739B2
(en)
*
|
2002-01-18 |
2003-09-16 |
Sandisk Corporation |
Reducing the effects of noise in non-volatile memories through multiple reads
|
US6850441B2
(en)
*
|
2002-01-18 |
2005-02-01 |
Sandisk Corporation |
Noise reduction technique for transistors and small devices utilizing an episodic agitation
|
US6975536B2
(en)
*
|
2002-01-31 |
2005-12-13 |
Saifun Semiconductors Ltd. |
Mass storage array and methods for operation thereof
|
JP2003242789A
(en)
*
|
2002-02-14 |
2003-08-29 |
Mitsubishi Electric Corp |
Nonvolatile semiconductor memory device
|
US6871257B2
(en)
|
2002-02-22 |
2005-03-22 |
Sandisk Corporation |
Pipelined parallel programming operation in a non-volatile memory system
|
US6771536B2
(en)
*
|
2002-02-27 |
2004-08-03 |
Sandisk Corporation |
Operating techniques for reducing program and read disturbs of a non-volatile memory
|
US6795349B2
(en)
*
|
2002-02-28 |
2004-09-21 |
Sandisk Corporation |
Method and system for efficiently reading and programming of dual cell memory elements
|
US7221591B1
(en)
*
|
2002-05-06 |
2007-05-22 |
Samsung Electronics Co., Ltd. |
Fabricating bi-directional nonvolatile memory cells
|
US6747896B2
(en)
|
2002-05-06 |
2004-06-08 |
Multi Level Memory Technology |
Bi-directional floating gate nonvolatile memory
|
US6914820B1
(en)
|
2002-05-06 |
2005-07-05 |
Multi Level Memory Technology |
Erasing storage nodes in a bi-directional nonvolatile memory cell
|
US6567304B1
(en)
|
2002-05-09 |
2003-05-20 |
Matrix Semiconductor, Inc |
Memory device and method for reliably reading multi-bit data from a write-many memory cell
|
US6751766B2
(en)
|
2002-05-20 |
2004-06-15 |
Sandisk Corporation |
Increasing the effectiveness of error correction codes and operating multi-level memory systems by using information about the quality of the stored data
|
US6751129B1
(en)
|
2002-05-21 |
2004-06-15 |
Sandisk Corporation |
Efficient read, write methods for multi-state memory
|
US20030218896A1
(en)
*
|
2002-05-22 |
2003-11-27 |
Pon Harry Q |
Combined memory
|
KR101110191B1
(en)
*
|
2002-06-19 |
2012-02-15 |
쌘디스크 코포레이션 |
Deep wordline trench to shield cross coupling between adjacent cells for scaled nand
|
US6894930B2
(en)
|
2002-06-19 |
2005-05-17 |
Sandisk Corporation |
Deep wordline trench to shield cross coupling between adjacent cells for scaled NAND
|
US6917544B2
(en)
|
2002-07-10 |
2005-07-12 |
Saifun Semiconductors Ltd. |
Multiple use memory chip
|
JP2004062922A
(en)
*
|
2002-07-25 |
2004-02-26 |
Renesas Technology Corp |
Nonvolatile semiconductor memory device
|
US6903987B2
(en)
*
|
2002-08-01 |
2005-06-07 |
T-Ram, Inc. |
Single data line sensing scheme for TCCT-based memory cells
|
US7324394B1
(en)
|
2002-08-01 |
2008-01-29 |
T-Ram Semiconductor, Inc. |
Single data line sensing scheme for TCCT-based memory cells
|
US6941412B2
(en)
*
|
2002-08-29 |
2005-09-06 |
Sandisk Corporation |
Symbol frequency leveling in a storage system
|
US6724662B2
(en)
|
2002-09-04 |
2004-04-20 |
Atmel Corporation |
Method of recovering overerased bits in a memory device
|
US6987693B2
(en)
|
2002-09-24 |
2006-01-17 |
Sandisk Corporation |
Non-volatile memory and method with reduced neighboring field errors
|
US7327619B2
(en)
*
|
2002-09-24 |
2008-02-05 |
Sandisk Corporation |
Reference sense amplifier for non-volatile memory
|
US6983428B2
(en)
|
2002-09-24 |
2006-01-03 |
Sandisk Corporation |
Highly compact non-volatile memory and method thereof
|
US7196931B2
(en)
*
|
2002-09-24 |
2007-03-27 |
Sandisk Corporation |
Non-volatile memory and method with reduced source line bias errors
|
AU2003272596A1
(en)
*
|
2002-09-24 |
2004-04-19 |
Sandisk Corporation |
Non-volatile memory and its sensing method
|
US6940753B2
(en)
|
2002-09-24 |
2005-09-06 |
Sandisk Corporation |
Highly compact non-volatile memory and method therefor with space-efficient data registers
|
US7324393B2
(en)
|
2002-09-24 |
2008-01-29 |
Sandisk Corporation |
Method for compensated sensing in non-volatile memory
|
US7443757B2
(en)
*
|
2002-09-24 |
2008-10-28 |
Sandisk Corporation |
Non-volatile memory and method with reduced bit line crosstalk errors
|
US7046568B2
(en)
*
|
2002-09-24 |
2006-05-16 |
Sandisk Corporation |
Memory sensing circuit and method for low voltage operation
|
US6891753B2
(en)
*
|
2002-09-24 |
2005-05-10 |
Sandisk Corporation |
Highly compact non-volatile memory and method therefor with internal serial buses
|
US6908817B2
(en)
*
|
2002-10-09 |
2005-06-21 |
Sandisk Corporation |
Flash memory array with increased coupling between floating and control gates
|
US6963505B2
(en)
|
2002-10-29 |
2005-11-08 |
Aifun Semiconductors Ltd. |
Method circuit and system for determining a reference voltage
|
US7136304B2
(en)
|
2002-10-29 |
2006-11-14 |
Saifun Semiconductor Ltd |
Method, system and circuit for programming a non-volatile memory array
|
US6992932B2
(en)
|
2002-10-29 |
2006-01-31 |
Saifun Semiconductors Ltd |
Method circuit and system for read error detection in a non-volatile memory array
|
JP2004171686A
(en)
*
|
2002-11-20 |
2004-06-17 |
Renesas Technology Corp |
Nonvolatile semiconductor memory device, and data erasing method therefor
|
JP3935139B2
(en)
|
2002-11-29 |
2007-06-20 |
株式会社東芝 |
Semiconductor memory device
|
US7073103B2
(en)
*
|
2002-12-05 |
2006-07-04 |
Sandisk Corporation |
Smart verify for multi-state memories
|
US7339822B2
(en)
*
|
2002-12-06 |
2008-03-04 |
Sandisk Corporation |
Current-limited latch
|
US6829167B2
(en)
*
|
2002-12-12 |
2004-12-07 |
Sandisk Corporation |
Error recovery for nonvolatile memory
|
JP4067956B2
(en)
*
|
2002-12-20 |
2008-03-26 |
スパンション エルエルシー |
Nonvolatile memory control method and nonvolatile memory
|
US6944063B2
(en)
|
2003-01-28 |
2005-09-13 |
Sandisk Corporation |
Non-volatile semiconductor memory with large erase blocks storing cycle counts
|
US6967896B2
(en)
*
|
2003-01-30 |
2005-11-22 |
Saifun Semiconductors Ltd |
Address scramble
|
US7178004B2
(en)
|
2003-01-31 |
2007-02-13 |
Yan Polansky |
Memory array programming circuit and a method for using the circuit
|
US7083586B2
(en)
*
|
2003-02-03 |
2006-08-01 |
Dj Orthopedics, Llc |
Patellofemoral brace
|
US7630237B2
(en)
*
|
2003-02-06 |
2009-12-08 |
Sandisk Corporation |
System and method for programming cells in non-volatile integrated memory devices
|
US6765825B1
(en)
*
|
2003-03-12 |
2004-07-20 |
Ami Semiconductor, Inc. |
Differential nor memory cell having two floating gate transistors
|
US7142464B2
(en)
*
|
2003-04-29 |
2006-11-28 |
Saifun Semiconductors Ltd. |
Apparatus and methods for multi-level sensing in a memory array
|
JP2004349334A
(en)
*
|
2003-05-20 |
2004-12-09 |
Sharp Corp |
Semiconductor storage device and method of improving data retention thereof
|
US7045849B2
(en)
*
|
2003-05-21 |
2006-05-16 |
Sandisk Corporation |
Use of voids between elements in semiconductor structures for isolation
|
US7237074B2
(en)
*
|
2003-06-13 |
2007-06-26 |
Sandisk Corporation |
Tracking cells for a memory system
|
US7105406B2
(en)
*
|
2003-06-20 |
2006-09-12 |
Sandisk Corporation |
Self aligned non-volatile memory cell and process for fabrication
|
JP4156985B2
(en)
*
|
2003-06-30 |
2008-09-24 |
株式会社東芝 |
Semiconductor memory device
|
US6914823B2
(en)
*
|
2003-07-29 |
2005-07-05 |
Sandisk Corporation |
Detecting over programmed memory after further programming
|
US6917542B2
(en)
*
|
2003-07-29 |
2005-07-12 |
Sandisk Corporation |
Detecting over programmed memory
|
US7057940B2
(en)
*
|
2003-08-19 |
2006-06-06 |
Powerchip Semiconductor Corp. |
Flash memory cell, flash memory cell array and manufacturing method thereof
|
US6954393B2
(en)
*
|
2003-09-16 |
2005-10-11 |
Saifun Semiconductors Ltd. |
Reading array cell with matched reference cell
|
US7123532B2
(en)
|
2003-09-16 |
2006-10-17 |
Saifun Semiconductors Ltd. |
Operating array cells with matched reference cells
|
US6956770B2
(en)
*
|
2003-09-17 |
2005-10-18 |
Sandisk Corporation |
Non-volatile memory and method with bit line compensation dependent on neighboring operating modes
|
US7064980B2
(en)
*
|
2003-09-17 |
2006-06-20 |
Sandisk Corporation |
Non-volatile memory and method with bit line coupled compensation
|
US7173852B2
(en)
*
|
2003-10-03 |
2007-02-06 |
Sandisk Corporation |
Corrected data storage and handling methods
|
US7012835B2
(en)
*
|
2003-10-03 |
2006-03-14 |
Sandisk Corporation |
Flash memory data correction and scrub techniques
|
US7221008B2
(en)
*
|
2003-10-06 |
2007-05-22 |
Sandisk Corporation |
Bitline direction shielding to avoid cross coupling between adjacent cells for NAND flash memory
|
US7021900B2
(en)
*
|
2003-10-08 |
2006-04-04 |
Prueitt Melvin L |
Vapor-powered kinetic pump
|
US7177199B2
(en)
*
|
2003-10-20 |
2007-02-13 |
Sandisk Corporation |
Behavior based programming of non-volatile memory
|
US7301807B2
(en)
|
2003-10-23 |
2007-11-27 |
Sandisk Corporation |
Writable tracking cells
|
US7484329B2
(en)
|
2003-11-20 |
2009-02-03 |
Seaweed Bio-Technology Inc. |
Technology for cultivation of Porphyra and other seaweeds in land-based sea water ponds
|
US7049652B2
(en)
*
|
2003-12-10 |
2006-05-23 |
Sandisk Corporation |
Pillar cell flash memory technology
|
US20050251617A1
(en)
*
|
2004-05-07 |
2005-11-10 |
Sinclair Alan W |
Hybrid non-volatile memory system
|
WO2005066970A2
(en)
|
2003-12-30 |
2005-07-21 |
Sandisk Corporation |
Robust data duplication and improved update method in a multibit non-volatile memory
|
US8504798B2
(en)
*
|
2003-12-30 |
2013-08-06 |
Sandisk Technologies Inc. |
Management of non-volatile memory systems having large erase blocks
|
US7173863B2
(en)
*
|
2004-03-08 |
2007-02-06 |
Sandisk Corporation |
Flash controller cache architecture
|
US20050144363A1
(en)
*
|
2003-12-30 |
2005-06-30 |
Sinclair Alan W. |
Data boundary management
|
US7383375B2
(en)
*
|
2003-12-30 |
2008-06-03 |
Sandisk Corporation |
Data run programming
|
US7139864B2
(en)
*
|
2003-12-30 |
2006-11-21 |
Sandisk Corporation |
Non-volatile memory and method with block management system
|
US7433993B2
(en)
*
|
2003-12-30 |
2008-10-07 |
San Disk Corportion |
Adaptive metablocks
|
US7631138B2
(en)
*
|
2003-12-30 |
2009-12-08 |
Sandisk Corporation |
Adaptive mode switching of flash memory address mapping based on host usage characteristics
|
US7594135B2
(en)
*
|
2003-12-31 |
2009-09-22 |
Sandisk Corporation |
Flash memory system startup operation
|
US6888758B1
(en)
|
2004-01-21 |
2005-05-03 |
Sandisk Corporation |
Programming non-volatile memory
|
US7154779B2
(en)
*
|
2004-01-21 |
2006-12-26 |
Sandisk Corporation |
Non-volatile memory cell using high-k material inter-gate programming
|
US7139198B2
(en)
*
|
2004-01-27 |
2006-11-21 |
Sandisk Corporation |
Efficient verification for coarse/fine programming of non-volatile memory
|
US7068539B2
(en)
|
2004-01-27 |
2006-06-27 |
Sandisk Corporation |
Charge packet metering for coarse/fine programming of non-volatile memory
|
US7002843B2
(en)
*
|
2004-01-27 |
2006-02-21 |
Sandisk Corporation |
Variable current sinking for coarse/fine programming of non-volatile memory
|
US7355237B2
(en)
*
|
2004-02-13 |
2008-04-08 |
Sandisk Corporation |
Shield plate for limiting cross coupling between floating gates
|
US20050202615A1
(en)
*
|
2004-03-10 |
2005-09-15 |
Nanosys, Inc. |
Nano-enabled memory devices and anisotropic charge carrying arrays
|
WO2005089165A2
(en)
*
|
2004-03-10 |
2005-09-29 |
Nanosys, Inc. |
Nano-enabled memory devices and anisotropic charge carrying arrays
|
US7595528B2
(en)
|
2004-03-10 |
2009-09-29 |
Nanosys, Inc. |
Nano-enabled memory devices and anisotropic charge carrying arrays
|
US7183153B2
(en)
*
|
2004-03-12 |
2007-02-27 |
Sandisk Corporation |
Method of manufacturing self aligned non-volatile memory cells
|
US7177977B2
(en)
*
|
2004-03-19 |
2007-02-13 |
Sandisk Corporation |
Operating non-volatile memory without read disturb limitations
|
US7652930B2
(en)
*
|
2004-04-01 |
2010-01-26 |
Saifun Semiconductors Ltd. |
Method, circuit and system for erasing one or more non-volatile memory cells
|
US7020017B2
(en)
*
|
2004-04-06 |
2006-03-28 |
Sandisk Corporation |
Variable programming of non-volatile memory
|
US7755938B2
(en)
*
|
2004-04-19 |
2010-07-13 |
Saifun Semiconductors Ltd. |
Method for reading a memory array with neighbor effect cancellation
|
US7057939B2
(en)
|
2004-04-23 |
2006-06-06 |
Sandisk Corporation |
Non-volatile memory and control with improved partial page program capability
|
US7020026B2
(en)
*
|
2004-05-05 |
2006-03-28 |
Sandisk Corporation |
Bitline governed approach for program control of non-volatile memory
|
US7023733B2
(en)
*
|
2004-05-05 |
2006-04-04 |
Sandisk Corporation |
Boosting to control programming of non-volatile memory
|
KR100852506B1
(en)
|
2004-05-05 |
2008-08-18 |
샌디스크 코포레이션 |
Boosting to control programming of non-volatile memory
|
US7490283B2
(en)
|
2004-05-13 |
2009-02-10 |
Sandisk Corporation |
Pipelined data relocation and improved chip architectures
|
US8429313B2
(en)
*
|
2004-05-27 |
2013-04-23 |
Sandisk Technologies Inc. |
Configurable ready/busy control
|
JP5000510B2
(en)
|
2004-06-08 |
2012-08-15 |
ナノシス・インク. |
Method and device for forming nanostructure monolayer and device comprising such monolayer
|
US7968273B2
(en)
|
2004-06-08 |
2011-06-28 |
Nanosys, Inc. |
Methods and devices for forming nanostructure monolayers and devices including such monolayers
|
TW201341440A
(en)
*
|
2004-06-08 |
2013-10-16 |
Sandisk Corp |
Post-deposition encapsulation of nanostructures: compositions, devices and systems incorporating same
|
US7776758B2
(en)
|
2004-06-08 |
2010-08-17 |
Nanosys, Inc. |
Methods and devices for forming nanostructure monolayers and devices including such monolayers
|
US8088483B1
(en)
|
2004-06-08 |
2012-01-03 |
Nanosys, Inc. |
Process for group 10 metal nanostructure synthesis and compositions made using same
|
US8563133B2
(en)
*
|
2004-06-08 |
2013-10-22 |
Sandisk Corporation |
Compositions and methods for modulation of nanostructure energy levels
|
JP2006048783A
(en)
*
|
2004-08-02 |
2006-02-16 |
Renesas Technology Corp |
Nonvolatile memory and memory card
|
US8375146B2
(en)
*
|
2004-08-09 |
2013-02-12 |
SanDisk Technologies, Inc. |
Ring bus structure and its use in flash memory systems
|
US7095655B2
(en)
*
|
2004-08-12 |
2006-08-22 |
Saifun Semiconductors Ltd. |
Dynamic matching of signal path and reference path for sensing
|
US20060036803A1
(en)
*
|
2004-08-16 |
2006-02-16 |
Mori Edan |
Non-volatile memory device controlled by a micro-controller
|
US7239552B2
(en)
*
|
2004-09-02 |
2007-07-03 |
Micron Technology, Inc. |
Non-volatile one time programmable memory
|
US7038948B2
(en)
*
|
2004-09-22 |
2006-05-02 |
Spansion Llc |
Read approach for multi-level virtual ground memory
|
US7068204B1
(en)
|
2004-09-28 |
2006-06-27 |
Spansion Llc |
System that facilitates reading multi-level data in non-volatile memory
|
US7638850B2
(en)
|
2004-10-14 |
2009-12-29 |
Saifun Semiconductors Ltd. |
Non-volatile memory structure and method of fabrication
|
JP2006134536A
(en)
*
|
2004-11-09 |
2006-05-25 |
Matsushita Electric Ind Co Ltd |
Nonvolatile semiconductor memory and its read method
|
US7441067B2
(en)
|
2004-11-15 |
2008-10-21 |
Sandisk Corporation |
Cyclic flash memory wear leveling
|
US7173859B2
(en)
*
|
2004-11-16 |
2007-02-06 |
Sandisk Corporation |
Faster programming of higher level states in multi-level cell flash memory
|
US7092290B2
(en)
*
|
2004-11-16 |
2006-08-15 |
Sandisk Corporation |
High speed programming system with reduced over programming
|
US7381615B2
(en)
|
2004-11-23 |
2008-06-03 |
Sandisk Corporation |
Methods for self-aligned trench filling with grown dielectric for high coupling ratio in semiconductor devices
|
US7416956B2
(en)
*
|
2004-11-23 |
2008-08-26 |
Sandisk Corporation |
Self-aligned trench filling for narrow gap isolation regions
|
US7257025B2
(en)
*
|
2004-12-09 |
2007-08-14 |
Saifun Semiconductors Ltd |
Method for reading non-volatile memory cells
|
US7120051B2
(en)
*
|
2004-12-14 |
2006-10-10 |
Sandisk Corporation |
Pipelined programming of non-volatile memories using early data
|
US7420847B2
(en)
*
|
2004-12-14 |
2008-09-02 |
Sandisk Corporation |
Multi-state memory having data recovery after program fail
|
US7158421B2
(en)
*
|
2005-04-01 |
2007-01-02 |
Sandisk Corporation |
Use of data latches in multi-phase programming of non-volatile memories
|
US7315916B2
(en)
*
|
2004-12-16 |
2008-01-01 |
Sandisk Corporation |
Scratch pad block
|
US7386655B2
(en)
*
|
2004-12-16 |
2008-06-10 |
Sandisk Corporation |
Non-volatile memory and method with improved indexing for scratch pad and update blocks
|
US7366826B2
(en)
*
|
2004-12-16 |
2008-04-29 |
Sandisk Corporation |
Non-volatile memory and method with multi-stream update tracking
|
US7395404B2
(en)
|
2004-12-16 |
2008-07-01 |
Sandisk Corporation |
Cluster auto-alignment for storing addressable data packets in a non-volatile memory array
|
US7412560B2
(en)
*
|
2004-12-16 |
2008-08-12 |
Sandisk Corporation |
Non-volatile memory and method with multi-stream updating
|
US7849381B2
(en)
*
|
2004-12-21 |
2010-12-07 |
Sandisk Corporation |
Method for copying data in reprogrammable non-volatile memory
|
US7882299B2
(en)
*
|
2004-12-21 |
2011-02-01 |
Sandisk Corporation |
System and method for use of on-chip non-volatile memory write cache
|
US7202125B2
(en)
*
|
2004-12-22 |
2007-04-10 |
Sandisk Corporation |
Low-voltage, multiple thin-gate oxide and low-resistance gate electrode
|
US7482223B2
(en)
*
|
2004-12-22 |
2009-01-27 |
Sandisk Corporation |
Multi-thickness dielectric for semiconductor memory
|
US20060140007A1
(en)
*
|
2004-12-29 |
2006-06-29 |
Raul-Adrian Cernea |
Non-volatile memory and method with shared processing for an aggregate of read/write circuits
|
EP1839311A1
(en)
*
|
2005-01-12 |
2007-10-03 |
Nxp B.V. |
Circuit with a memory array and a reference level generator circuit
|
EP1684307A1
(en)
*
|
2005-01-19 |
2006-07-26 |
Saifun Semiconductors Ltd. |
Method, circuit and systems for erasing one or more non-volatile memory cells
|
US7315917B2
(en)
|
2005-01-20 |
2008-01-01 |
Sandisk Corporation |
Scheduling of housekeeping operations in flash memory systems
|
US7251160B2
(en)
*
|
2005-03-16 |
2007-07-31 |
Sandisk Corporation |
Non-volatile memory and method with power-saving read and program-verify operations
|
US8053812B2
(en)
|
2005-03-17 |
2011-11-08 |
Spansion Israel Ltd |
Contact in planar NROM technology
|
US7113431B1
(en)
*
|
2005-03-29 |
2006-09-26 |
Spansion Llc |
Quad bit using hot-hole erase for CBD control
|
US7447078B2
(en)
|
2005-04-01 |
2008-11-04 |
Sandisk Corporation |
Method for non-volatile memory with background data latch caching during read operations
|
US7173854B2
(en)
*
|
2005-04-01 |
2007-02-06 |
Sandisk Corporation |
Non-volatile memory and method with compensation for source line bias errors
|
US7206230B2
(en)
|
2005-04-01 |
2007-04-17 |
Sandisk Corporation |
Use of data latches in cache operations of non-volatile memories
|
US7170784B2
(en)
*
|
2005-04-01 |
2007-01-30 |
Sandisk Corporation |
Non-volatile memory and method with control gate compensation for source line bias errors
|
US7463521B2
(en)
*
|
2005-04-01 |
2008-12-09 |
Sandisk Corporation |
Method for non-volatile memory with managed execution of cached data
|
US7196928B2
(en)
*
|
2005-04-05 |
2007-03-27 |
Sandisk Corporation |
Compensating for coupling during read operations of non-volatile memory
|
US7196946B2
(en)
*
|
2005-04-05 |
2007-03-27 |
Sandisk Corporation |
Compensating for coupling in non-volatile storage
|
US7187585B2
(en)
*
|
2005-04-05 |
2007-03-06 |
Sandisk Corporation |
Read operation for non-volatile storage that includes compensation for coupling
|
JP2006294144A
(en)
*
|
2005-04-12 |
2006-10-26 |
Toshiba Corp |
Nonvolatile semiconductor memory device
|
US7339834B2
(en)
|
2005-06-03 |
2008-03-04 |
Sandisk Corporation |
Starting program voltage shift with cycling of non-volatile memory
|
US7274607B2
(en)
*
|
2005-06-15 |
2007-09-25 |
Micron Technology, Inc. |
Bitline exclusion in verification operation
|
US8400841B2
(en)
*
|
2005-06-15 |
2013-03-19 |
Spansion Israel Ltd. |
Device to program adjacent storage cells of different NROM cells
|
US7184313B2
(en)
*
|
2005-06-17 |
2007-02-27 |
Saifun Semiconductors Ltd. |
Method circuit and system for compensating for temperature induced margin loss in non-volatile memory cells
|
US8335894B1
(en)
|
2008-07-25 |
2012-12-18 |
Google Inc. |
Configurable memory system with interface circuit
|
US8111566B1
(en)
|
2007-11-16 |
2012-02-07 |
Google, Inc. |
Optimal channel design for memory devices for providing a high-speed memory interface
|
US9171585B2
(en)
|
2005-06-24 |
2015-10-27 |
Google Inc. |
Configurable memory circuit system and method
|
US20080028136A1
(en)
|
2006-07-31 |
2008-01-31 |
Schakel Keith R |
Method and apparatus for refresh management of memory modules
|
US8397013B1
(en)
|
2006-10-05 |
2013-03-12 |
Google Inc. |
Hybrid memory module
|
US8130560B1
(en)
|
2006-11-13 |
2012-03-06 |
Google Inc. |
Multi-rank partial width memory modules
|
US8796830B1
(en)
|
2006-09-01 |
2014-08-05 |
Google Inc. |
Stackable low-profile lead frame package
|
US8055833B2
(en)
|
2006-10-05 |
2011-11-08 |
Google Inc. |
System and method for increasing capacity, performance, and flexibility of flash storage
|
US8386722B1
(en)
|
2008-06-23 |
2013-02-26 |
Google Inc. |
Stacked DIMM memory interface
|
US9507739B2
(en)
|
2005-06-24 |
2016-11-29 |
Google Inc. |
Configurable memory circuit system and method
|
US10013371B2
(en)
|
2005-06-24 |
2018-07-03 |
Google Llc |
Configurable memory circuit system and method
|
US8041881B2
(en)
|
2006-07-31 |
2011-10-18 |
Google Inc. |
Memory device with emulated characteristics
|
US8060774B2
(en)
*
|
2005-06-24 |
2011-11-15 |
Google Inc. |
Memory systems and memory modules
|
US8359187B2
(en)
|
2005-06-24 |
2013-01-22 |
Google Inc. |
Simulating a different number of memory circuit devices
|
US8438328B2
(en)
|
2008-02-21 |
2013-05-07 |
Google Inc. |
Emulation of abstracted DIMMs using abstracted DRAMs
|
US8077535B2
(en)
|
2006-07-31 |
2011-12-13 |
Google Inc. |
Memory refresh apparatus and method
|
US7609567B2
(en)
*
|
2005-06-24 |
2009-10-27 |
Metaram, Inc. |
System and method for simulating an aspect of a memory circuit
|
US7386656B2
(en)
|
2006-07-31 |
2008-06-10 |
Metaram, Inc. |
Interface circuit system and method for performing power management operations in conjunction with only a portion of a memory circuit
|
US8081474B1
(en)
|
2007-12-18 |
2011-12-20 |
Google Inc. |
Embossed heat spreader
|
US8244971B2
(en)
|
2006-07-31 |
2012-08-14 |
Google Inc. |
Memory circuit system and method
|
US20080082763A1
(en)
|
2006-10-02 |
2008-04-03 |
Metaram, Inc. |
Apparatus and method for power management of memory circuits by a system or component thereof
|
US8089795B2
(en)
|
2006-02-09 |
2012-01-03 |
Google Inc. |
Memory module with memory stack and interface with enhanced capabilities
|
US7656710B1
(en)
|
2005-07-14 |
2010-02-02 |
Sau Ching Wong |
Adaptive operations for nonvolatile memories
|
JP2007027760A
(en)
|
2005-07-18 |
2007-02-01 |
Saifun Semiconductors Ltd |
High density nonvolatile memory array and manufacturing method
|
US7927948B2
(en)
|
2005-07-20 |
2011-04-19 |
Micron Technology, Inc. |
Devices with nanocrystals and methods of formation
|
US7230854B2
(en)
*
|
2005-08-01 |
2007-06-12 |
Sandisk Corporation |
Method for programming non-volatile memory with self-adjusting maximum program loop
|
US7023737B1
(en)
|
2005-08-01 |
2006-04-04 |
Sandisk Corporation |
System for programming non-volatile memory with self-adjusting maximum program loop
|
US20070036007A1
(en)
*
|
2005-08-09 |
2007-02-15 |
Saifun Semiconductors, Ltd. |
Sticky bit buffer
|
US7668017B2
(en)
|
2005-08-17 |
2010-02-23 |
Saifun Semiconductors Ltd. |
Method of erasing non-volatile memory cells
|
US8110469B2
(en)
|
2005-08-30 |
2012-02-07 |
Micron Technology, Inc. |
Graded dielectric layers
|
US7345918B2
(en)
*
|
2005-08-31 |
2008-03-18 |
Micron Technology, Inc. |
Selective threshold voltage verification and compaction
|
DE112006004263B4
(en)
|
2005-09-02 |
2015-05-13 |
Google, Inc. |
memory chip
|
KR100675517B1
(en)
*
|
2005-09-09 |
2007-01-30 |
주식회사 엑셀반도체 |
A serial flash memory device and precharging method thereof
|
US20070059945A1
(en)
*
|
2005-09-12 |
2007-03-15 |
Nima Mohklesi |
Atomic layer deposition with nitridation and oxidation
|
US7640424B2
(en)
*
|
2005-10-13 |
2009-12-29 |
Sandisk Corporation |
Initialization of flash storage via an embedded controller
|
US7206235B1
(en)
|
2005-10-14 |
2007-04-17 |
Sandisk Corporation |
Apparatus for controlled programming of non-volatile memory exhibiting bit line coupling
|
US7286406B2
(en)
*
|
2005-10-14 |
2007-10-23 |
Sandisk Corporation |
Method for controlled programming of non-volatile memory exhibiting bit line coupling
|
US7541240B2
(en)
*
|
2005-10-18 |
2009-06-02 |
Sandisk Corporation |
Integration process flow for flash devices with low gap fill aspect ratio
|
US7631162B2
(en)
|
2005-10-27 |
2009-12-08 |
Sandisck Corporation |
Non-volatile memory with adaptive handling of data writes
|
US7301817B2
(en)
|
2005-10-27 |
2007-11-27 |
Sandisk Corporation |
Method for programming of multi-state non-volatile memory using smart verify
|
US7366022B2
(en)
*
|
2005-10-27 |
2008-04-29 |
Sandisk Corporation |
Apparatus for programming of multi-state non-volatile memory using smart verify
|
US7509471B2
(en)
*
|
2005-10-27 |
2009-03-24 |
Sandisk Corporation |
Methods for adaptively handling data writes in non-volatile memories
|
US20070106842A1
(en)
*
|
2005-11-04 |
2007-05-10 |
Conley Kevin M |
Enhanced first level storage caching methods using nonvolatile memory
|
US7634585B2
(en)
*
|
2005-11-04 |
2009-12-15 |
Sandisk Corporation |
In-line cache using nonvolatile memory between host and disk device
|
US7379330B2
(en)
*
|
2005-11-08 |
2008-05-27 |
Sandisk Corporation |
Retargetable memory cell redundancy methods
|
JP5224642B2
(en)
*
|
2005-11-21 |
2013-07-03 |
富士通セミコンダクター株式会社 |
Integrated circuit layout method and computer program
|
US7739472B2
(en)
*
|
2005-11-22 |
2010-06-15 |
Sandisk Corporation |
Memory system for legacy hosts
|
US7747927B2
(en)
*
|
2005-11-22 |
2010-06-29 |
Sandisk Corporation |
Method for adapting a memory system to operate with a legacy host originally designed to operate with a different memory system
|
US7737483B2
(en)
*
|
2005-12-06 |
2010-06-15 |
Sandisk Corporation |
Low resistance void-free contacts
|
US7615448B2
(en)
*
|
2005-12-06 |
2009-11-10 |
Sandisk Corporation |
Method of forming low resistance void-free contacts
|
US7262994B2
(en)
*
|
2005-12-06 |
2007-08-28 |
Sandisk Corporation |
System for reducing read disturb for non-volatile storage
|
US7349258B2
(en)
*
|
2005-12-06 |
2008-03-25 |
Sandisk Corporation |
Reducing read disturb for non-volatile storage
|
DE602006021058D1
(en)
|
2005-12-06 |
2011-05-12 |
Sandisk Corp |
SAVING THE READING ERROR IN NON-VOLATILE STORAGE
|
US7355889B2
(en)
*
|
2005-12-19 |
2008-04-08 |
Sandisk Corporation |
Method for programming non-volatile memory with reduced program disturb using modified pass voltages
|
US7355888B2
(en)
*
|
2005-12-19 |
2008-04-08 |
Sandisk Corporation |
Apparatus for programming non-volatile memory with reduced program disturb using modified pass voltages
|
US7489546B2
(en)
*
|
2005-12-20 |
2009-02-10 |
Micron Technology, Inc. |
NAND architecture memory devices and operation
|
US7655536B2
(en)
|
2005-12-21 |
2010-02-02 |
Sandisk Corporation |
Methods of forming flash devices with shared word lines
|
US7495294B2
(en)
*
|
2005-12-21 |
2009-02-24 |
Sandisk Corporation |
Flash devices with shared word lines
|
US7365018B2
(en)
*
|
2005-12-28 |
2008-04-29 |
Sandisk Corporation |
Fabrication of semiconductor device for flash memory with increased select gate width
|
US7349264B2
(en)
*
|
2005-12-28 |
2008-03-25 |
Sandisk Corporation |
Alternate sensing techniques for non-volatile memories
|
US7616481B2
(en)
*
|
2005-12-28 |
2009-11-10 |
Sandisk Corporation |
Memories with alternate sensing techniques
|
US7310255B2
(en)
*
|
2005-12-29 |
2007-12-18 |
Sandisk Corporation |
Non-volatile memory with improved program-verify operations
|
US7349260B2
(en)
*
|
2005-12-29 |
2008-03-25 |
Sandisk Corporation |
Alternate row-based reading and writing for non-volatile memory
|
US7733704B2
(en)
*
|
2005-12-29 |
2010-06-08 |
Sandisk Corporation |
Non-volatile memory with power-saving multi-pass sensing
|
US7443726B2
(en)
*
|
2005-12-29 |
2008-10-28 |
Sandisk Corporation |
Systems for alternate row-based reading and writing for non-volatile memory
|
US7224614B1
(en)
|
2005-12-29 |
2007-05-29 |
Sandisk Corporation |
Methods for improved program-verify operations in non-volatile memories
|
US7447094B2
(en)
*
|
2005-12-29 |
2008-11-04 |
Sandisk Corporation |
Method for power-saving multi-pass sensing in non-volatile memory
|
TWI260643B
(en)
*
|
2005-12-30 |
2006-08-21 |
Ind Tech Res Inst |
Organic memory
|
US7808818B2
(en)
|
2006-01-12 |
2010-10-05 |
Saifun Semiconductors Ltd. |
Secondary injection for NROM
|
US8055979B2
(en)
*
|
2006-01-20 |
2011-11-08 |
Marvell World Trade Ltd. |
Flash memory with coding and signal processing
|
US7844879B2
(en)
*
|
2006-01-20 |
2010-11-30 |
Marvell World Trade Ltd. |
Method and system for error correction in flash memory
|
US9632929B2
(en)
|
2006-02-09 |
2017-04-25 |
Google Inc. |
Translating an address associated with a command communicated between a system and memory circuits
|
ITRM20060074A1
(en)
|
2006-02-15 |
2007-08-16 |
Micron Technology Inc |
CIRCUIT FOR DATA LATCH SINGLE IN A VOLATILE MEMORY AND HIGHER LEVEL DEVICE
|
US8253452B2
(en)
|
2006-02-21 |
2012-08-28 |
Spansion Israel Ltd |
Circuit and method for powering up an integrated circuit and an integrated circuit utilizing same
|
US7760554B2
(en)
|
2006-02-21 |
2010-07-20 |
Saifun Semiconductors Ltd. |
NROM non-volatile memory and mode of operation
|
US7692961B2
(en)
|
2006-02-21 |
2010-04-06 |
Saifun Semiconductors Ltd. |
Method, circuit and device for disturb-control of programming nonvolatile memory cells by hot-hole injection (HHI) and by channel hot-electron (CHE) injection
|
US7436733B2
(en)
*
|
2006-03-03 |
2008-10-14 |
Sandisk Corporation |
System for performing read operation on non-volatile storage with compensation for coupling
|
US7499319B2
(en)
|
2006-03-03 |
2009-03-03 |
Sandisk Corporation |
Read operation for non-volatile storage with compensation for coupling
|
DE602007012157D1
(en)
|
2006-03-03 |
2011-03-03 |
Sandisk Corp |
Nonvolatile memory reading method with floating gate coupling compensation
|
US20070255889A1
(en)
*
|
2006-03-22 |
2007-11-01 |
Yoav Yogev |
Non-volatile memory device and method of operating the device
|
US7324389B2
(en)
*
|
2006-03-24 |
2008-01-29 |
Sandisk Corporation |
Non-volatile memory with redundancy data buffered in remote buffer circuits
|
US7224605B1
(en)
|
2006-03-24 |
2007-05-29 |
Sandisk Corporation |
Non-volatile memory with redundancy data buffered in data latches for defective locations
|
KR101347590B1
(en)
|
2006-03-24 |
2014-01-07 |
샌디스크 테크놀로지스, 인코포레이티드 |
Non-volatile memory and method with redundancy data buffered in remote buffer circuits
|
WO2007112201A2
(en)
|
2006-03-24 |
2007-10-04 |
Sandisk Corporation |
Non-volatile memory and method with redundancy data buffered in data latches for defective locations
|
US7394690B2
(en)
*
|
2006-03-24 |
2008-07-01 |
Sandisk Corporation |
Method for column redundancy using data latches in solid-state memories
|
US7352635B2
(en)
*
|
2006-03-24 |
2008-04-01 |
Sandisk Corporation |
Method for remote redundancy for non-volatile memory
|
US7436713B2
(en)
|
2006-04-12 |
2008-10-14 |
Sandisk Corporation |
Reducing the impact of program disturb
|
US7499326B2
(en)
*
|
2006-04-12 |
2009-03-03 |
Sandisk Corporation |
Apparatus for reducing the impact of program disturb
|
JP4995264B2
(en)
|
2006-04-12 |
2012-08-08 |
サンディスク コーポレイション |
Reduction of program disturbance during reading
|
US7515463B2
(en)
|
2006-04-12 |
2009-04-07 |
Sandisk Corporation |
Reducing the impact of program disturb during read
|
US7426137B2
(en)
|
2006-04-12 |
2008-09-16 |
Sandisk Corporation |
Apparatus for reducing the impact of program disturb during read
|
US7467253B2
(en)
*
|
2006-04-13 |
2008-12-16 |
Sandisk Corporation |
Cycle count storage systems
|
US7451264B2
(en)
*
|
2006-04-13 |
2008-11-11 |
Sandisk Corporation |
Cycle count storage methods
|
US7701779B2
(en)
|
2006-04-27 |
2010-04-20 |
Sajfun Semiconductors Ltd. |
Method for programming a reference cell
|
US7376018B2
(en)
*
|
2006-05-01 |
2008-05-20 |
Infineon Technologies Ag |
Non-volatile memory device with single transistor memory cell
|
CN103280239B
(en)
|
2006-05-12 |
2016-04-06 |
苹果公司 |
Distortion estimation in memory device and elimination
|
KR101202537B1
(en)
*
|
2006-05-12 |
2012-11-19 |
애플 인크. |
Combined distortion estimation and error correction coding for memory devices
|
WO2007132456A2
(en)
*
|
2006-05-12 |
2007-11-22 |
Anobit Technologies Ltd. |
Memory device with adaptive capacity
|
US7697326B2
(en)
*
|
2006-05-12 |
2010-04-13 |
Anobit Technologies Ltd. |
Reducing programming error in memory devices
|
US7511646B2
(en)
*
|
2006-05-15 |
2009-03-31 |
Apple Inc. |
Use of 8-bit or higher A/D for NAND cell value
|
US7551486B2
(en)
*
|
2006-05-15 |
2009-06-23 |
Apple Inc. |
Iterative memory cell charging based on reference cell value
|
US20070266296A1
(en)
*
|
2006-05-15 |
2007-11-15 |
Conley Kevin M |
Nonvolatile Memory with Convolutional Coding
|
US7639542B2
(en)
*
|
2006-05-15 |
2009-12-29 |
Apple Inc. |
Maintenance operations for multi-level data storage cells
|
US7852690B2
(en)
*
|
2006-05-15 |
2010-12-14 |
Apple Inc. |
Multi-chip package for a flash memory
|
US7568135B2
(en)
|
2006-05-15 |
2009-07-28 |
Apple Inc. |
Use of alternative value in cell detection
|
US7613043B2
(en)
*
|
2006-05-15 |
2009-11-03 |
Apple Inc. |
Shifting reference values to account for voltage sag
|
US7911834B2
(en)
*
|
2006-05-15 |
2011-03-22 |
Apple Inc. |
Analog interface for a flash memory die
|
US7701797B2
(en)
*
|
2006-05-15 |
2010-04-20 |
Apple Inc. |
Two levels of voltage regulation supplied for logic and data programming voltage of a memory device
|
US7840875B2
(en)
*
|
2006-05-15 |
2010-11-23 |
Sandisk Corporation |
Convolutional coding methods for nonvolatile memory
|
US8000134B2
(en)
|
2006-05-15 |
2011-08-16 |
Apple Inc. |
Off-die charge pump that supplies multiple flash devices
|
US7639531B2
(en)
*
|
2006-05-15 |
2009-12-29 |
Apple Inc. |
Dynamic cell bit resolution
|
US7457163B2
(en)
*
|
2006-06-01 |
2008-11-25 |
Sandisk Corporation |
System for verifying non-volatile storage using different voltages
|
WO2008097320A2
(en)
*
|
2006-06-01 |
2008-08-14 |
Virginia Tech Intellectual Properties, Inc. |
Premixing injector for gas turbine engines
|
US7440331B2
(en)
*
|
2006-06-01 |
2008-10-21 |
Sandisk Corporation |
Verify operation for non-volatile storage using different voltages
|
US20070281105A1
(en)
*
|
2006-06-02 |
2007-12-06 |
Nima Mokhlesi |
Atomic Layer Deposition of Oxides Using Krypton as an Ion Generating Feeding Gas
|
US20070281082A1
(en)
*
|
2006-06-02 |
2007-12-06 |
Nima Mokhlesi |
Flash Heating in Atomic Layer Deposition
|
US20070277735A1
(en)
*
|
2006-06-02 |
2007-12-06 |
Nima Mokhlesi |
Systems for Atomic Layer Deposition of Oxides Using Krypton as an Ion Generating Feeding Gas
|
US7450421B2
(en)
*
|
2006-06-02 |
2008-11-11 |
Sandisk Corporation |
Data pattern sensitivity compensation using different voltage
|
US7310272B1
(en)
*
|
2006-06-02 |
2007-12-18 |
Sandisk Corporation |
System for performing data pattern sensitivity compensation using different voltage
|
US20100024732A1
(en)
*
|
2006-06-02 |
2010-02-04 |
Nima Mokhlesi |
Systems for Flash Heating in Atomic Layer Deposition
|
US7342831B2
(en)
*
|
2006-06-16 |
2008-03-11 |
Sandisk Corporation |
System for operating non-volatile memory using temperature compensation of voltages of unselected word lines and select gates
|
US7391650B2
(en)
*
|
2006-06-16 |
2008-06-24 |
Sandisk Corporation |
Method for operating non-volatile memory using temperature compensation of voltages of unselected word lines and select gates
|
CN102306501B
(en)
*
|
2006-06-19 |
2014-03-19 |
桑迪士克股份有限公司 |
Programming defferently sized margins and sensing with compensations at select states for improved read operations in non-volatile memory
|
US7349261B2
(en)
*
|
2006-06-19 |
2008-03-25 |
Sandisk Corporation |
Method for increasing programming speed for non-volatile memory by applying counter-transitioning waveforms to word lines
|
US7492633B2
(en)
*
|
2006-06-19 |
2009-02-17 |
Sandisk Corporation |
System for increasing programming speed for non-volatile memory by applying counter-transitioning waveforms to word lines
|
US7606084B2
(en)
*
|
2006-06-19 |
2009-10-20 |
Sandisk Corporation |
Programming differently sized margins and sensing with compensations at select states for improved read operations in non-volatile memory
|
US7352628B2
(en)
*
|
2006-06-19 |
2008-04-01 |
Sandisk Corporation |
Systems for programming differently sized margins and sensing with compensations at select states for improved read operations in a non-volatile memory
|
US7486561B2
(en)
*
|
2006-06-22 |
2009-02-03 |
Sandisk Corporation |
Method for non-real time reprogramming of non-volatile memory to achieve tighter distribution of threshold voltages
|
US7489549B2
(en)
*
|
2006-06-22 |
2009-02-10 |
Sandisk Corporation |
System for non-real time reprogramming of non-volatile memory to achieve tighter distribution of threshold voltages
|
US20070297247A1
(en)
*
|
2006-06-26 |
2007-12-27 |
Gerrit Jan Hemink |
Method for programming non-volatile memory using variable amplitude programming pulses
|
US7304893B1
(en)
|
2006-06-30 |
2007-12-04 |
Sandisk Corporation |
Method of partial page fail bit detection in flash memory devices
|
US7355892B2
(en)
*
|
2006-06-30 |
2008-04-08 |
Sandisk Corporation |
Partial page fail bit detection in flash memory devices
|
US7443729B2
(en)
*
|
2006-07-20 |
2008-10-28 |
Sandisk Corporation |
System that compensates for coupling based on sensing a neighbor using coupling
|
US7506113B2
(en)
*
|
2006-07-20 |
2009-03-17 |
Sandisk Corporation |
Method for configuring compensation
|
US7894269B2
(en)
*
|
2006-07-20 |
2011-02-22 |
Sandisk Corporation |
Nonvolatile memory and method for compensating during programming for perturbing charges of neighboring cells
|
US7885119B2
(en)
*
|
2006-07-20 |
2011-02-08 |
Sandisk Corporation |
Compensating for coupling during programming
|
US7400535B2
(en)
*
|
2006-07-20 |
2008-07-15 |
Sandisk Corporation |
System that compensates for coupling during programming
|
US7522454B2
(en)
*
|
2006-07-20 |
2009-04-21 |
Sandisk Corporation |
Compensating for coupling based on sensing a neighbor using coupling
|
US7495953B2
(en)
*
|
2006-07-20 |
2009-02-24 |
Sandisk Corporation |
System for configuring compensation
|
US7619464B2
(en)
*
|
2006-07-28 |
2009-11-17 |
Freescale Semiconductor, Inc. |
Current comparison based voltage bias generator for electronic data storage devices
|
US7755132B2
(en)
|
2006-08-16 |
2010-07-13 |
Sandisk Corporation |
Nonvolatile memories with shaped floating gates
|
KR20120041806A
(en)
|
2006-08-16 |
2012-05-02 |
샌디스크 코포레이션 |
Nonvolatile memories with shaped floating gates
|
US7494860B2
(en)
*
|
2006-08-16 |
2009-02-24 |
Sandisk Corporation |
Methods of forming nonvolatile memories with L-shaped floating gates
|
WO2008026203A2
(en)
|
2006-08-27 |
2008-03-06 |
Anobit Technologies |
Estimation of non-linear distortion in memory devices
|
US7440326B2
(en)
|
2006-09-06 |
2008-10-21 |
Sandisk Corporation |
Programming non-volatile memory with improved boosting
|
US7734861B2
(en)
*
|
2006-09-08 |
2010-06-08 |
Sandisk Corporation |
Pseudo random and command driven bit compensation for the cycling effects in flash memory
|
US7885112B2
(en)
*
|
2007-09-07 |
2011-02-08 |
Sandisk Corporation |
Nonvolatile memory and method for on-chip pseudo-randomization of data within a page and between pages
|
US7606966B2
(en)
*
|
2006-09-08 |
2009-10-20 |
Sandisk Corporation |
Methods in a pseudo random and command driven bit compensation for the cycling effects in flash memory
|
US7606091B2
(en)
*
|
2006-09-12 |
2009-10-20 |
Sandisk Corporation |
Method for non-volatile memory with reduced erase/write cycling during trimming of initial programming voltage
|
US7606077B2
(en)
*
|
2006-09-12 |
2009-10-20 |
Sandisk Corporation |
Non-volatile memory with reduced erase/write cycling during trimming of initial programming voltage
|
WO2008033693A2
(en)
|
2006-09-12 |
2008-03-20 |
Sandisk Corporation |
Non-volatile memory and method for linear estimation of initial programming voltage
|
US7453731B2
(en)
*
|
2006-09-12 |
2008-11-18 |
Sandisk Corporation |
Method for non-volatile memory with linear estimation of initial programming voltage
|
US7599223B2
(en)
|
2006-09-12 |
2009-10-06 |
Sandisk Corporation |
Non-volatile memory with linear estimation of initial programming voltage
|
DE602006013977D1
(en)
*
|
2006-09-13 |
2010-06-10 |
Hynix Semiconductor Inc |
A method of setting the read evaluation time in a non-volatile NAND memory device
|
US7779056B2
(en)
*
|
2006-09-15 |
2010-08-17 |
Sandisk Corporation |
Managing a pool of update memory blocks based on each block's activity and data order
|
US7774392B2
(en)
*
|
2006-09-15 |
2010-08-10 |
Sandisk Corporation |
Non-volatile memory with management of a pool of update memory blocks based on each block's activity and data order
|
US7696044B2
(en)
*
|
2006-09-19 |
2010-04-13 |
Sandisk Corporation |
Method of making an array of non-volatile memory cells with floating gates formed of spacers in substrate trenches
|
US7646054B2
(en)
*
|
2006-09-19 |
2010-01-12 |
Sandisk Corporation |
Array of non-volatile memory cells with floating gates formed of spacers in substrate trenches
|
US20080074920A1
(en)
*
|
2006-09-21 |
2008-03-27 |
Henry Chien |
Nonvolatile Memory with Reduced Coupling Between Floating Gates
|
US7615445B2
(en)
*
|
2006-09-21 |
2009-11-10 |
Sandisk Corporation |
Methods of reducing coupling between floating gates in nonvolatile memory
|
US7716538B2
(en)
*
|
2006-09-27 |
2010-05-11 |
Sandisk Corporation |
Memory with cell population distribution assisted read margining
|
US7886204B2
(en)
*
|
2006-09-27 |
2011-02-08 |
Sandisk Corporation |
Methods of cell population distribution assisted read margining
|
US20080092015A1
(en)
*
|
2006-09-28 |
2008-04-17 |
Yigal Brandman |
Nonvolatile memory with adaptive operation
|
US7705387B2
(en)
*
|
2006-09-28 |
2010-04-27 |
Sandisk Corporation |
Non-volatile memory with local boosting control implant
|
US7904783B2
(en)
*
|
2006-09-28 |
2011-03-08 |
Sandisk Corporation |
Soft-input soft-output decoder for nonvolatile memory
|
US7818653B2
(en)
*
|
2006-09-28 |
2010-10-19 |
Sandisk Corporation |
Methods of soft-input soft-output decoding for nonvolatile memory
|
US7805663B2
(en)
|
2006-09-28 |
2010-09-28 |
Sandisk Corporation |
Methods of adapting operation of nonvolatile memory
|
US7977186B2
(en)
*
|
2006-09-28 |
2011-07-12 |
Sandisk Corporation |
Providing local boosting control implant for non-volatile memory
|
US7675802B2
(en)
|
2006-09-29 |
2010-03-09 |
Sandisk Corporation |
Dual voltage flash memory card
|
US7656735B2
(en)
|
2006-09-29 |
2010-02-02 |
Sandisk Corporation |
Dual voltage flash memory methods
|
US7684247B2
(en)
*
|
2006-09-29 |
2010-03-23 |
Sandisk Corporation |
Reverse reading in non-volatile memory with compensation for coupling
|
US7447076B2
(en)
*
|
2006-09-29 |
2008-11-04 |
Sandisk Corporation |
Systems for reverse reading in non-volatile memory with compensation for coupling
|
US7474561B2
(en)
*
|
2006-10-10 |
2009-01-06 |
Sandisk Corporation |
Variable program voltage increment values in non-volatile memory program operations
|
US7450426B2
(en)
*
|
2006-10-10 |
2008-11-11 |
Sandisk Corporation |
Systems utilizing variable program voltage increment values in non-volatile memory program operations
|
JP5311784B2
(en)
*
|
2006-10-11 |
2013-10-09 |
ルネサスエレクトロニクス株式会社 |
Semiconductor device
|
US20080091901A1
(en)
*
|
2006-10-12 |
2008-04-17 |
Alan David Bennett |
Method for non-volatile memory with worst-case control data management
|
US20080091871A1
(en)
*
|
2006-10-12 |
2008-04-17 |
Alan David Bennett |
Non-volatile memory with worst-case control data management
|
US7586157B2
(en)
*
|
2006-10-17 |
2009-09-08 |
Sandisk Corporation |
Non-volatile memory with dual voltage select gate structure
|
US7616490B2
(en)
*
|
2006-10-17 |
2009-11-10 |
Sandisk Corporation |
Programming non-volatile memory with dual voltage select gate structure
|
US7691710B2
(en)
*
|
2006-10-17 |
2010-04-06 |
Sandisk Corporation |
Fabricating non-volatile memory with dual voltage select gate structure
|
US7372753B1
(en)
*
|
2006-10-19 |
2008-05-13 |
Unity Semiconductor Corporation |
Two-cycle sensing in a two-terminal memory array having leakage current
|
US7379364B2
(en)
*
|
2006-10-19 |
2008-05-27 |
Unity Semiconductor Corporation |
Sensing a signal in a two-terminal memory array having leakage current
|
US7596031B2
(en)
|
2006-10-30 |
2009-09-29 |
Sandisk Corporation |
Faster programming of highest multi-level state for non-volatile memory
|
CN101601094B
(en)
*
|
2006-10-30 |
2013-03-27 |
苹果公司 |
Reading memory cells using multiple thresholds
|
WO2008053472A2
(en)
|
2006-10-30 |
2008-05-08 |
Anobit Technologies Ltd. |
Reading memory cells using multiple thresholds
|
US7440323B2
(en)
*
|
2006-11-02 |
2008-10-21 |
Sandisk Corporation |
Reducing program disturb in non-volatile memory using multiple boosting modes
|
US7468911B2
(en)
*
|
2006-11-02 |
2008-12-23 |
Sandisk Corporation |
Non-volatile memory using multiple boosting modes for reduced program disturb
|
US8001441B2
(en)
*
|
2006-11-03 |
2011-08-16 |
Sandisk Technologies Inc. |
Nonvolatile memory with modulated error correction coding
|
US7558109B2
(en)
*
|
2006-11-03 |
2009-07-07 |
Sandisk Corporation |
Nonvolatile memory with variable read threshold
|
US7904788B2
(en)
*
|
2006-11-03 |
2011-03-08 |
Sandisk Corporation |
Methods of varying read threshold voltage in nonvolatile memory
|
US7904780B2
(en)
|
2006-11-03 |
2011-03-08 |
Sandisk Corporation |
Methods of modulating error correction coding
|
KR100827697B1
(en)
*
|
2006-11-10 |
2008-05-07 |
삼성전자주식회사 |
Semiconductor memory device having three dimension structure and cell array structure
|
US7508703B2
(en)
*
|
2006-11-13 |
2009-03-24 |
Sandisk Corporation |
Non-volatile memory with boost structures
|
US7696035B2
(en)
*
|
2006-11-13 |
2010-04-13 |
Sandisk Corporation |
Method for fabricating non-volatile memory with boost structures
|
US7508710B2
(en)
*
|
2006-11-13 |
2009-03-24 |
Sandisk Corporation |
Operating non-volatile memory with boost structures
|
US7924648B2
(en)
|
2006-11-28 |
2011-04-12 |
Anobit Technologies Ltd. |
Memory power and performance management
|
US8151163B2
(en)
*
|
2006-12-03 |
2012-04-03 |
Anobit Technologies Ltd. |
Automatic defect management in memory devices
|
US7623387B2
(en)
*
|
2006-12-12 |
2009-11-24 |
Sandisk Corporation |
Non-volatile storage with early source-side boosting for reducing program disturb
|
US7623386B2
(en)
*
|
2006-12-12 |
2009-11-24 |
Sandisk Corporation |
Reducing program disturb in non-volatile storage using early source-side boosting
|
KR100784867B1
(en)
*
|
2006-12-13 |
2007-12-14 |
삼성전자주식회사 |
Nonvolatile memory device having flag cells for storing msb program state
|
KR100801035B1
(en)
|
2006-12-14 |
2008-02-04 |
삼성전자주식회사 |
Method of programming multi-level cells, page buffer block and non-volatile memory device including the same
|
US7593263B2
(en)
*
|
2006-12-17 |
2009-09-22 |
Anobit Technologies Ltd. |
Memory device with reduced reading latency
|
US7900102B2
(en)
*
|
2006-12-17 |
2011-03-01 |
Anobit Technologies Ltd. |
High-speed programming of memory devices
|
US8686490B2
(en)
*
|
2006-12-20 |
2014-04-01 |
Sandisk Corporation |
Electron blocking layers for electronic devices
|
US7847341B2
(en)
|
2006-12-20 |
2010-12-07 |
Nanosys, Inc. |
Electron blocking layers for electronic devices
|
US20080150004A1
(en)
*
|
2006-12-20 |
2008-06-26 |
Nanosys, Inc. |
Electron Blocking Layers for Electronic Devices
|
US20080150003A1
(en)
*
|
2006-12-20 |
2008-06-26 |
Jian Chen |
Electron blocking layers for electronic devices
|
US20080150009A1
(en)
*
|
2006-12-20 |
2008-06-26 |
Nanosys, Inc. |
Electron Blocking Layers for Electronic Devices
|
US7800161B2
(en)
*
|
2006-12-21 |
2010-09-21 |
Sandisk Corporation |
Flash NAND memory cell array with charge storage elements positioned in trenches
|
US7642160B2
(en)
*
|
2006-12-21 |
2010-01-05 |
Sandisk Corporation |
Method of forming a flash NAND memory cell array with charge storage elements positioned in trenches
|
US8370561B2
(en)
*
|
2006-12-24 |
2013-02-05 |
Sandisk Il Ltd. |
Randomizing for suppressing errors in a flash memory
|
WO2008078314A1
(en)
*
|
2006-12-24 |
2008-07-03 |
Sandisk Il Ltd |
Flash memory device, system and method with randomizing for suppressing error
|
US8127200B2
(en)
|
2006-12-24 |
2012-02-28 |
Sandisk Il Ltd. |
Flash memory device and system with randomizing for suppressing errors
|
US7570520B2
(en)
*
|
2006-12-27 |
2009-08-04 |
Sandisk Corporation |
Non-volatile storage system with initial programming voltage based on trial
|
US7710776B2
(en)
*
|
2006-12-27 |
2010-05-04 |
Cypress Semiconductor Corporation |
Method for on chip sensing of SONOS VT window in non-volatile static random access memory
|
US7551482B2
(en)
*
|
2006-12-27 |
2009-06-23 |
Sandisk Corporation |
Method for programming with initial programming voltage based on trial
|
US20080157169A1
(en)
*
|
2006-12-28 |
2008-07-03 |
Yuan Jack H |
Shield plates for reduced field coupling in nonvolatile memory
|
US7539052B2
(en)
*
|
2006-12-28 |
2009-05-26 |
Micron Technology, Inc. |
Non-volatile multilevel memory cell programming
|
US20080160680A1
(en)
*
|
2006-12-28 |
2008-07-03 |
Yuan Jack H |
Methods of fabricating shield plates for reduced field coupling in nonvolatile memory
|
US7701765B2
(en)
*
|
2006-12-28 |
2010-04-20 |
Micron Technology, Inc. |
Non-volatile multilevel memory cell programming
|
US7606070B2
(en)
*
|
2006-12-29 |
2009-10-20 |
Sandisk Corporation |
Systems for margined neighbor reading for non-volatile memory read operations including coupling compensation
|
US7652919B2
(en)
*
|
2006-12-29 |
2010-01-26 |
Spansion Llc |
Multi-level operation in dual element cells using a supplemental programming level
|
US7495962B2
(en)
*
|
2006-12-29 |
2009-02-24 |
Sandisk Corporation |
Alternating read mode
|
US7590002B2
(en)
*
|
2006-12-29 |
2009-09-15 |
Sandisk Corporation |
Resistance sensing and compensation for non-volatile storage
|
US7539059B2
(en)
*
|
2006-12-29 |
2009-05-26 |
Intel Corporation |
Selective bit line precharging in non volatile memory
|
US7440324B2
(en)
*
|
2006-12-29 |
2008-10-21 |
Sandisk Corporation |
Apparatus with alternating read mode
|
US7616498B2
(en)
*
|
2006-12-29 |
2009-11-10 |
Sandisk Corporation |
Non-volatile storage system with resistance sensing and compensation
|
US7518923B2
(en)
*
|
2006-12-29 |
2009-04-14 |
Sandisk Corporation |
Margined neighbor reading for non-volatile memory read operations including coupling compensation
|
US8583981B2
(en)
*
|
2006-12-29 |
2013-11-12 |
Marvell World Trade Ltd. |
Concatenated codes for holographic storage
|
US7583535B2
(en)
*
|
2006-12-30 |
2009-09-01 |
Sandisk Corporation |
Biasing non-volatile storage to compensate for temperature variations
|
US7525843B2
(en)
*
|
2006-12-30 |
2009-04-28 |
Sandisk Corporation |
Non-volatile storage with adaptive body bias
|
US7554853B2
(en)
*
|
2006-12-30 |
2009-06-30 |
Sandisk Corporation |
Non-volatile storage with bias based on selective word line
|
US7468920B2
(en)
|
2006-12-30 |
2008-12-23 |
Sandisk Corporation |
Applying adaptive body bias to non-volatile storage
|
US7468919B2
(en)
*
|
2006-12-30 |
2008-12-23 |
Sandisk Corporation |
Biasing non-volatile storage based on selected word line
|
US7583539B2
(en)
*
|
2006-12-30 |
2009-09-01 |
Sandisk Corporation |
Non-volatile storage with bias for temperature compensation
|
US7577030B2
(en)
*
|
2007-01-17 |
2009-08-18 |
Kabushiki Kaisha Toshiba |
Semiconductor storage device
|
US7751240B2
(en)
|
2007-01-24 |
2010-07-06 |
Anobit Technologies Ltd. |
Memory device with negative thresholds
|
US8151166B2
(en)
|
2007-01-24 |
2012-04-03 |
Anobit Technologies Ltd. |
Reduction of back pattern dependency effects in memory devices
|
US7660166B2
(en)
|
2007-01-31 |
2010-02-09 |
Sandisk Il Ltd. |
Method of improving programming precision in flash memory
|
KR101147522B1
(en)
|
2007-02-20 |
2012-05-21 |
샌디스크 테크놀로지스, 인코포레이티드 |
Dynamic verify based on threshold voltage distribution
|
KR100866961B1
(en)
*
|
2007-02-27 |
2008-11-05 |
삼성전자주식회사 |
Non-volatile Memory Device and Driving Method for the same
|
JP2008217857A
(en)
*
|
2007-02-28 |
2008-09-18 |
Toshiba Corp |
Memory controller and semiconductor device
|
US7499320B2
(en)
*
|
2007-03-07 |
2009-03-03 |
Sandisk Corporation |
Non-volatile memory with cache page copy
|
US7502255B2
(en)
*
|
2007-03-07 |
2009-03-10 |
Sandisk Corporation |
Method for cache page copy in a non-volatile memory
|
CN101715595A
(en)
*
|
2007-03-12 |
2010-05-26 |
爱诺彼得技术有限责任公司 |
Adaptive estimation of memory cell read thresholds
|
US7535764B2
(en)
*
|
2007-03-21 |
2009-05-19 |
Sandisk Corporation |
Adjusting resistance of non-volatile memory using dummy memory cells
|
US7477547B2
(en)
*
|
2007-03-28 |
2009-01-13 |
Sandisk Corporation |
Flash memory refresh techniques triggered by controlled scrub data reads
|
US7573773B2
(en)
*
|
2007-03-28 |
2009-08-11 |
Sandisk Corporation |
Flash memory with data refresh triggered by controlled scrub data reads
|
US7508713B2
(en)
*
|
2007-03-29 |
2009-03-24 |
Sandisk Corporation |
Method of compensating variations along a word line in a non-volatile memory
|
US7797480B2
(en)
*
|
2007-03-29 |
2010-09-14 |
Sandisk Corporation |
Method for reading non-volatile storage using pre-conditioning waveforms and modified reliability metrics
|
US7577031B2
(en)
*
|
2007-03-29 |
2009-08-18 |
Sandisk Corporation |
Non-volatile memory with compensation for variations along a word line
|
US7904793B2
(en)
*
|
2007-03-29 |
2011-03-08 |
Sandisk Corporation |
Method for decoding data in non-volatile storage using reliability metrics based on multiple reads
|
US7745285B2
(en)
*
|
2007-03-30 |
2010-06-29 |
Sandisk Corporation |
Methods of forming and operating NAND memory with side-tunneling
|
US7532516B2
(en)
*
|
2007-04-05 |
2009-05-12 |
Sandisk Corporation |
Non-volatile storage with current sensing of negative threshold voltages
|
US7606076B2
(en)
*
|
2007-04-05 |
2009-10-20 |
Sandisk Corporation |
Sensing in non-volatile storage using pulldown to regulated source voltage to remove system noise
|
US7551483B2
(en)
*
|
2007-04-10 |
2009-06-23 |
Sandisk Corporation |
Non-volatile memory with predictive programming
|
US7643348B2
(en)
*
|
2007-04-10 |
2010-01-05 |
Sandisk Corporation |
Predictive programming in non-volatile memory
|
KR100875979B1
(en)
*
|
2007-04-19 |
2008-12-24 |
삼성전자주식회사 |
Nonvolatile memory device, memory system including it and its read method
|
US8001320B2
(en)
*
|
2007-04-22 |
2011-08-16 |
Anobit Technologies Ltd. |
Command interface for memory devices
|
US7606071B2
(en)
*
|
2007-04-24 |
2009-10-20 |
Sandisk Corporation |
Compensating source voltage drop in non-volatile storage
|
US7606072B2
(en)
*
|
2007-04-24 |
2009-10-20 |
Sandisk Corporation |
Non-volatile storage with compensation for source voltage drop
|
US7606079B2
(en)
*
|
2007-04-25 |
2009-10-20 |
Sandisk Corporation |
Reducing power consumption during read operations in non-volatile storage
|
US7440327B1
(en)
|
2007-04-25 |
2008-10-21 |
Sandisk Corporation |
Non-volatile storage with reduced power consumption during read operations
|
US7463522B2
(en)
*
|
2007-05-07 |
2008-12-09 |
Sandisk Corporation |
Non-volatile storage with boosting using channel isolation switching
|
US7460404B1
(en)
*
|
2007-05-07 |
2008-12-02 |
Sandisk Corporation |
Boosting for non-volatile storage using channel isolation switching
|
US7577026B2
(en)
*
|
2007-05-07 |
2009-08-18 |
Sandisk Corporation |
Source and drain side early boosting using local self boosting for non-volatile storage
|
US8234545B2
(en)
*
|
2007-05-12 |
2012-07-31 |
Apple Inc. |
Data storage with incremental redundancy
|
WO2008139441A2
(en)
|
2007-05-12 |
2008-11-20 |
Anobit Technologies Ltd. |
Memory device with internal signal processing unit
|
US8073648B2
(en)
*
|
2007-05-14 |
2011-12-06 |
Sandisk Il Ltd. |
Measuring threshold voltage distribution in memory using an aggregate characteristic
|
US20080294813A1
(en)
*
|
2007-05-24 |
2008-11-27 |
Sergey Anatolievich Gorobets |
Managing Housekeeping Operations in Flash Memory
|
US20080294814A1
(en)
*
|
2007-05-24 |
2008-11-27 |
Sergey Anatolievich Gorobets |
Flash Memory System with Management of Housekeeping Operations
|
US7489553B2
(en)
*
|
2007-06-07 |
2009-02-10 |
Sandisk Corporation |
Non-volatile memory with improved sensing having bit-line lockout control
|
US7492640B2
(en)
*
|
2007-06-07 |
2009-02-17 |
Sandisk Corporation |
Sensing with bit-line lockout control in non-volatile memory
|
KR100892583B1
(en)
*
|
2007-06-08 |
2009-04-08 |
삼성전자주식회사 |
Apparatus for programming a data of memory cell considering floating poly coupling and method using the same
|
US7986553B2
(en)
*
|
2007-06-15 |
2011-07-26 |
Micron Technology, Inc. |
Programming of a solid state memory utilizing analog communication of bit patterns
|
US7463514B1
(en)
*
|
2007-06-21 |
2008-12-09 |
Intel Corporation |
Multi-level cell serial-parallel sense scheme for non-volatile flash memory
|
US7545678B2
(en)
*
|
2007-06-29 |
2009-06-09 |
Sandisk Corporation |
Non-volatile storage with source bias all bit line sensing
|
US7471567B1
(en)
|
2007-06-29 |
2008-12-30 |
Sandisk Corporation |
Method for source bias all bit line sensing in non-volatile storage
|
US7599224B2
(en)
*
|
2007-07-03 |
2009-10-06 |
Sandisk Corporation |
Systems for coarse/fine program verification in non-volatile memory using different reference levels for improved sensing
|
US7508715B2
(en)
*
|
2007-07-03 |
2009-03-24 |
Sandisk Corporation |
Coarse/fine program verification in non-volatile memory using different reference levels for improved sensing
|
US7925936B1
(en)
|
2007-07-13 |
2011-04-12 |
Anobit Technologies Ltd. |
Memory device with non-uniform programming levels
|
US8259497B2
(en)
|
2007-08-06 |
2012-09-04 |
Apple Inc. |
Programming schemes for multi-level analog memory cells
|
US8320191B2
(en)
|
2007-08-30 |
2012-11-27 |
Infineon Technologies Ag |
Memory cell arrangement, method for controlling a memory cell, memory array and electronic device
|
US7869273B2
(en)
|
2007-09-04 |
2011-01-11 |
Sandisk Corporation |
Reducing the impact of interference during programming
|
US7672163B2
(en)
|
2007-09-14 |
2010-03-02 |
Sandisk Corporation |
Control gate line architecture
|
US7652929B2
(en)
*
|
2007-09-17 |
2010-01-26 |
Sandisk Corporation |
Non-volatile memory and method for biasing adjacent word line for verify during programming
|
US8174905B2
(en)
*
|
2007-09-19 |
2012-05-08 |
Anobit Technologies Ltd. |
Programming orders for reducing distortion in arrays of multi-level analog memory cells
|
US8026170B2
(en)
*
|
2007-09-26 |
2011-09-27 |
Sandisk Technologies Inc. |
Method of forming a single-layer metal conductors with multiple thicknesses
|
US7577034B2
(en)
*
|
2007-09-26 |
2009-08-18 |
Sandisk Corporation |
Reducing programming voltage differential nonlinearity in non-volatile storage
|
US7978520B2
(en)
|
2007-09-27 |
2011-07-12 |
Sandisk Corporation |
Compensation of non-volatile memory chip non-idealities by program pulse adjustment
|
US7894263B2
(en)
*
|
2007-09-28 |
2011-02-22 |
Sandisk Corporation |
High voltage generation and control in source-side injection programming of non-volatile memory
|
US7773413B2
(en)
|
2007-10-08 |
2010-08-10 |
Anobit Technologies Ltd. |
Reliable data storage in analog memory cells in the presence of temperature variations
|
US8068360B2
(en)
*
|
2007-10-19 |
2011-11-29 |
Anobit Technologies Ltd. |
Reading analog memory cells using built-in multi-threshold commands
|
US8000141B1
(en)
|
2007-10-19 |
2011-08-16 |
Anobit Technologies Ltd. |
Compensation for voltage drifts in analog memory cells
|
WO2009050703A2
(en)
*
|
2007-10-19 |
2009-04-23 |
Anobit Technologies |
Data storage in analog memory cell arrays having erase failures
|
US7876616B2
(en)
*
|
2007-11-12 |
2011-01-25 |
Cadence Design Systems, Inc. |
System and method for wear leveling utilizing a relative wear counter
|
WO2009063450A2
(en)
*
|
2007-11-13 |
2009-05-22 |
Anobit Technologies |
Optimized selection of memory units in multi-unit memory devices
|
US8296498B2
(en)
*
|
2007-11-13 |
2012-10-23 |
Sandisk Technologies Inc. |
Method and system for virtual fast access non-volatile RAM
|
US7613045B2
(en)
*
|
2007-11-26 |
2009-11-03 |
Sandisk Il, Ltd. |
Operation sequence and commands for measuring threshold voltage distribution in memory
|
US8225181B2
(en)
|
2007-11-30 |
2012-07-17 |
Apple Inc. |
Efficient re-read operations from memory devices
|
US7948802B2
(en)
*
|
2007-12-04 |
2011-05-24 |
Micron Technology, Inc. |
Sensing memory cells
|
US7688638B2
(en)
*
|
2007-12-07 |
2010-03-30 |
Sandisk Corporation |
Faster programming of multi-level non-volatile storage through reduced verify operations
|
US8209588B2
(en)
*
|
2007-12-12 |
2012-06-26 |
Anobit Technologies Ltd. |
Efficient interference cancellation in analog memory cell arrays
|
US7941687B2
(en)
*
|
2007-12-13 |
2011-05-10 |
Digi International Inc. |
Method and apparatus for digital I/O expander chip with multi-function timer cells
|
US8456905B2
(en)
|
2007-12-16 |
2013-06-04 |
Apple Inc. |
Efficient data storage in multi-plane memory devices
|
US7701761B2
(en)
*
|
2007-12-20 |
2010-04-20 |
Sandisk Corporation |
Read, verify word line reference voltage to track source level
|
US7764547B2
(en)
*
|
2007-12-20 |
2010-07-27 |
Sandisk Corporation |
Regulation of source potential to combat cell source IR drop
|
US8085586B2
(en)
*
|
2007-12-27 |
2011-12-27 |
Anobit Technologies Ltd. |
Wear level estimation in analog memory cells
|
US7593265B2
(en)
*
|
2007-12-28 |
2009-09-22 |
Sandisk Corporation |
Low noise sense amplifier array and method for nonvolatile memory
|
US8098536B2
(en)
|
2008-01-24 |
2012-01-17 |
International Business Machines Corporation |
Self-repair integrated circuit and repair method
|
US8156398B2
(en)
*
|
2008-02-05 |
2012-04-10 |
Anobit Technologies Ltd. |
Parameter estimation based on error correction code parity check equations
|
US7986579B2
(en)
*
|
2008-02-13 |
2011-07-26 |
Spansion Llc |
Memory device and method thereof
|
US7924587B2
(en)
*
|
2008-02-21 |
2011-04-12 |
Anobit Technologies Ltd. |
Programming of analog memory cells using a single programming pulse per state transition
|
US7864573B2
(en)
|
2008-02-24 |
2011-01-04 |
Anobit Technologies Ltd. |
Programming analog memory cells for reduced variance after retention
|
US8230300B2
(en)
*
|
2008-03-07 |
2012-07-24 |
Apple Inc. |
Efficient readout from analog memory cells using data compression
|
US8400858B2
(en)
|
2008-03-18 |
2013-03-19 |
Apple Inc. |
Memory device with reduced sense time readout
|
US8059457B2
(en)
*
|
2008-03-18 |
2011-11-15 |
Anobit Technologies Ltd. |
Memory device with multiple-accuracy read commands
|
US7915664B2
(en)
*
|
2008-04-17 |
2011-03-29 |
Sandisk Corporation |
Non-volatile memory with sidewall channels and raised source/drain regions
|
US7808819B2
(en)
*
|
2008-04-29 |
2010-10-05 |
Sandisk Il Ltd. |
Method for adaptive setting of state voltage levels in non-volatile memory
|
US7808836B2
(en)
*
|
2008-04-29 |
2010-10-05 |
Sandisk Il Ltd. |
Non-volatile memory with adaptive setting of state voltage levels
|
US20100040568A1
(en)
*
|
2008-04-30 |
2010-02-18 |
Skinmedica, Inc. |
Steroidal compounds as melanogenesis modifiers and uses thereof
|
US8051240B2
(en)
*
|
2008-05-09 |
2011-11-01 |
Sandisk Technologies Inc. |
Compensating non-volatile storage using different pass voltages during program-verify and read
|
US8164655B2
(en)
|
2008-05-19 |
2012-04-24 |
Spatial Cam Llc |
Systems and methods for concurrently playing multiple images from a storage medium
|
US9171221B2
(en)
|
2010-07-18 |
2015-10-27 |
Spatial Cam Llc |
Camera to track an object
|
US9736368B2
(en)
|
2013-03-15 |
2017-08-15 |
Spatial Cam Llc |
Camera in a headframe for object tracking
|
US10896327B1
(en)
|
2013-03-15 |
2021-01-19 |
Spatial Cam Llc |
Device with a camera for locating hidden object
|
US20100097444A1
(en)
*
|
2008-10-16 |
2010-04-22 |
Peter Lablans |
Camera System for Creating an Image From a Plurality of Images
|
US10585344B1
(en)
|
2008-05-19 |
2020-03-10 |
Spatial Cam Llc |
Camera system with a plurality of image sensors
|
US11119396B1
(en)
|
2008-05-19 |
2021-09-14 |
Spatial Cam Llc |
Camera system with a plurality of image sensors
|
US10354407B2
(en)
|
2013-03-15 |
2019-07-16 |
Spatial Cam Llc |
Camera for locating hidden objects
|
US20110098083A1
(en)
*
|
2008-05-19 |
2011-04-28 |
Peter Lablans |
Large, Ultra-Thin And Ultra-Light Connectable Display For A Computing Device
|
US8355042B2
(en)
|
2008-10-16 |
2013-01-15 |
Spatial Cam Llc |
Controller in a camera for creating a panoramic image
|
US8031521B1
(en)
|
2008-05-20 |
2011-10-04 |
Marvell International Ltd. |
Reprogramming non-volatile memory devices for read disturbance mitigation
|
US7719902B2
(en)
*
|
2008-05-23 |
2010-05-18 |
Sandisk Corporation |
Enhanced bit-line pre-charge scheme for increasing channel boosting in non-volatile storage
|
US7952928B2
(en)
*
|
2008-05-27 |
2011-05-31 |
Sandisk Il Ltd. |
Increasing read throughput in non-volatile memory
|
US7505334B1
(en)
*
|
2008-05-28 |
2009-03-17 |
International Business Machines Corporation |
Measurement method for reading multi-level memory cell utilizing measurement time delay as the characteristic parameter for level definition
|
US7957197B2
(en)
*
|
2008-05-28 |
2011-06-07 |
Sandisk Corporation |
Nonvolatile memory with a current sense amplifier having a precharge circuit and a transfer gate coupled to a sense node
|
US7796435B2
(en)
*
|
2008-06-12 |
2010-09-14 |
Sandisk Corporation |
Method for correlated multiple pass programming in nonvolatile memory
|
US7826271B2
(en)
*
|
2008-06-12 |
2010-11-02 |
Sandisk Corporation |
Nonvolatile memory with index programming and reduced verify
|
US7813172B2
(en)
|
2008-06-12 |
2010-10-12 |
Sandisk Corporation |
Nonvolatile memory with correlated multiple pass programming
|
US7800945B2
(en)
*
|
2008-06-12 |
2010-09-21 |
Sandisk Corporation |
Method for index programming and reduced verify in nonvolatile memory
|
US7848144B2
(en)
*
|
2008-06-16 |
2010-12-07 |
Sandisk Corporation |
Reverse order page writing in flash memories
|
US8407559B2
(en)
*
|
2008-06-20 |
2013-03-26 |
Marvell World Trade Ltd. |
Monitoring memory
|
US8458563B2
(en)
*
|
2008-06-23 |
2013-06-04 |
Ramot At Tel Aviv University Ltd. |
Reading a flash memory by joint decoding and cell voltage distribution tracking
|
US7800956B2
(en)
*
|
2008-06-27 |
2010-09-21 |
Sandisk Corporation |
Programming algorithm to reduce disturb with minimal extra time penalty
|
US7808831B2
(en)
*
|
2008-06-30 |
2010-10-05 |
Sandisk Corporation |
Read disturb mitigation in non-volatile memory
|
US7852683B2
(en)
*
|
2008-07-02 |
2010-12-14 |
Sandisk Corporation |
Correcting for over programming non-volatile storage
|
US7965554B2
(en)
*
|
2008-07-02 |
2011-06-21 |
Sandisk Corporation |
Selective erase operation for non-volatile storage
|
US8014209B2
(en)
|
2008-07-02 |
2011-09-06 |
Sandisk Technologies Inc. |
Programming and selectively erasing non-volatile storage
|
US8458536B2
(en)
*
|
2008-07-17 |
2013-06-04 |
Marvell World Trade Ltd. |
Data recovery in solid state memory devices
|
US7719876B2
(en)
*
|
2008-07-31 |
2010-05-18 |
Unity Semiconductor Corporation |
Preservation circuit and methods to maintain values representing data in one or more layers of memory
|
US7751251B2
(en)
*
|
2008-07-31 |
2010-07-06 |
Intel Corporation |
Current sensing scheme for non-volatile memory
|
US8498151B1
(en)
|
2008-08-05 |
2013-07-30 |
Apple Inc. |
Data storage in analog memory cells using modified pass voltages
|
US7924613B1
(en)
|
2008-08-05 |
2011-04-12 |
Anobit Technologies Ltd. |
Data storage in analog memory cells with protection against programming interruption
|
US7715235B2
(en)
*
|
2008-08-25 |
2010-05-11 |
Sandisk Corporation |
Non-volatile memory and method for ramp-down programming
|
US8949684B1
(en)
|
2008-09-02 |
2015-02-03 |
Apple Inc. |
Segmented data storage
|
US8169825B1
(en)
|
2008-09-02 |
2012-05-01 |
Anobit Technologies Ltd. |
Reliable data storage in analog memory cells subjected to long retention periods
|
US8000135B1
(en)
|
2008-09-14 |
2011-08-16 |
Anobit Technologies Ltd. |
Estimation of memory cell read thresholds by sampling inside programming level distribution intervals
|
US8482978B1
(en)
|
2008-09-14 |
2013-07-09 |
Apple Inc. |
Estimation of memory cell read thresholds by sampling inside programming level distribution intervals
|
US7830701B2
(en)
*
|
2008-09-19 |
2010-11-09 |
Unity Semiconductor Corporation |
Contemporaneous margin verification and memory access for memory cells in cross point memory arrays
|
US7768836B2
(en)
*
|
2008-10-10 |
2010-08-03 |
Sandisk Corporation |
Nonvolatile memory and method with reduced program verify by ignoring fastest and/or slowest programming bits
|
US8239734B1
(en)
|
2008-10-15 |
2012-08-07 |
Apple Inc. |
Efficient data storage in storage device arrays
|
US8416282B2
(en)
*
|
2008-10-16 |
2013-04-09 |
Spatial Cam Llc |
Camera for creating a panoramic image
|
US8045375B2
(en)
|
2008-10-24 |
2011-10-25 |
Sandisk Technologies Inc. |
Programming non-volatile memory with high resolution variable initial programming pulse
|
US8261159B1
(en)
|
2008-10-30 |
2012-09-04 |
Apple, Inc. |
Data scrambling schemes for memory devices
|
US8208304B2
(en)
*
|
2008-11-16 |
2012-06-26 |
Anobit Technologies Ltd. |
Storage at M bits/cell density in N bits/cell analog memory cell devices, M>N
|
JP5193830B2
(en)
|
2008-12-03 |
2013-05-08 |
株式会社東芝 |
Nonvolatile semiconductor memory
|
WO2010067407A1
(en)
*
|
2008-12-08 |
2010-06-17 |
ハングリー・シー・アセッツ・エル・エル・ピー |
Semiconductor memory device and method for fabricating the same
|
US8291297B2
(en)
*
|
2008-12-18 |
2012-10-16 |
Intel Corporation |
Data error recovery in non-volatile memory
|
US7941697B2
(en)
*
|
2008-12-30 |
2011-05-10 |
Symantec Operating Corporation |
Failure handling using overlay objects on a file system using object based storage devices
|
US7944754B2
(en)
*
|
2008-12-31 |
2011-05-17 |
Sandisk Corporation |
Non-volatile memory and method with continuous scanning time-domain sensing
|
US8248831B2
(en)
*
|
2008-12-31 |
2012-08-21 |
Apple Inc. |
Rejuvenation of analog memory cells
|
US7813181B2
(en)
*
|
2008-12-31 |
2010-10-12 |
Sandisk Corporation |
Non-volatile memory and method for sensing with pipelined corrections for neighboring perturbations
|
US8397131B1
(en)
|
2008-12-31 |
2013-03-12 |
Apple Inc. |
Efficient readout schemes for analog memory cell devices
|
US8700840B2
(en)
*
|
2009-01-05 |
2014-04-15 |
SanDisk Technologies, Inc. |
Nonvolatile memory with write cache having flush/eviction methods
|
US8040744B2
(en)
*
|
2009-01-05 |
2011-10-18 |
Sandisk Technologies Inc. |
Spare block management of non-volatile memories
|
US8244960B2
(en)
|
2009-01-05 |
2012-08-14 |
Sandisk Technologies Inc. |
Non-volatile memory and method with write cache partition management methods
|
KR101760144B1
(en)
|
2009-01-05 |
2017-07-31 |
샌디스크 테크놀로지스 엘엘씨 |
Non-volatile memory and method with write cache partitioning
|
US20100174845A1
(en)
*
|
2009-01-05 |
2010-07-08 |
Sergey Anatolievich Gorobets |
Wear Leveling for Non-Volatile Memories: Maintenance of Experience Count and Passive Techniques
|
US8094500B2
(en)
*
|
2009-01-05 |
2012-01-10 |
Sandisk Technologies Inc. |
Non-volatile memory and method with write cache partitioning
|
US7974133B2
(en)
|
2009-01-06 |
2011-07-05 |
Sandisk Technologies Inc. |
Robust sensing circuit and method
|
US8924661B1
(en)
|
2009-01-18 |
2014-12-30 |
Apple Inc. |
Memory system including a controller and processors associated with memory devices
|
US8166368B2
(en)
*
|
2009-02-24 |
2012-04-24 |
International Business Machines Corporation |
Writing a special symbol to a memory to indicate the absence of a data signal
|
US8023345B2
(en)
*
|
2009-02-24 |
2011-09-20 |
International Business Machines Corporation |
Iteratively writing contents to memory locations using a statistical model
|
US8228701B2
(en)
|
2009-03-01 |
2012-07-24 |
Apple Inc. |
Selective activation of programming schemes in analog memory cell arrays
|
US8259506B1
(en)
|
2009-03-25 |
2012-09-04 |
Apple Inc. |
Database of memory read thresholds
|
US8832354B2
(en)
*
|
2009-03-25 |
2014-09-09 |
Apple Inc. |
Use of host system resources by memory controller
|
US8026544B2
(en)
|
2009-03-30 |
2011-09-27 |
Sandisk Technologies Inc. |
Fabricating and operating a memory array having a multi-level cell region and a single-level cell region
|
US7983065B2
(en)
|
2009-04-08 |
2011-07-19 |
Sandisk 3D Llc |
Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines
|
US8199576B2
(en)
*
|
2009-04-08 |
2012-06-12 |
Sandisk 3D Llc |
Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines and a double-global-bit-line architecture
|
KR101717798B1
(en)
|
2009-04-08 |
2017-03-17 |
샌디스크 테크놀로지스 엘엘씨 |
Three-dimensional array of re-programmable nonvolatile memory elements having vertical bit lines and a double-global-bit-line architecture
|
US8351236B2
(en)
|
2009-04-08 |
2013-01-08 |
Sandisk 3D Llc |
Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines and a single-sided word line architecture
|
US7907449B2
(en)
|
2009-04-09 |
2011-03-15 |
Sandisk Corporation |
Two pass erase for non-volatile storage
|
US8238157B1
(en)
|
2009-04-12 |
2012-08-07 |
Apple Inc. |
Selective re-programming of analog memory cells
|
US7830708B1
(en)
*
|
2009-04-22 |
2010-11-09 |
Seagate Technology Llc |
Compensating for variations in memory cell programmed state distributions
|
US8027195B2
(en)
*
|
2009-06-05 |
2011-09-27 |
SanDisk Technologies, Inc. |
Folding data stored in binary format into multi-state format within non-volatile memory devices
|
US8102705B2
(en)
*
|
2009-06-05 |
2012-01-24 |
Sandisk Technologies Inc. |
Structure and method for shuffling data within non-volatile memory devices
|
EP2441007A1
(en)
|
2009-06-09 |
2012-04-18 |
Google, Inc. |
Programming of dimm termination resistance values
|
US20100318720A1
(en)
*
|
2009-06-16 |
2010-12-16 |
Saranyan Rajagopalan |
Multi-Bank Non-Volatile Memory System with Satellite File System
|
US7974124B2
(en)
*
|
2009-06-24 |
2011-07-05 |
Sandisk Corporation |
Pointer based column selection techniques in non-volatile memories
|
US8054691B2
(en)
|
2009-06-26 |
2011-11-08 |
Sandisk Technologies Inc. |
Detecting the completion of programming for non-volatile storage
|
US20110002169A1
(en)
*
|
2009-07-06 |
2011-01-06 |
Yan Li |
Bad Column Management with Bit Information in Non-Volatile Memory Systems
|
US8479080B1
(en)
|
2009-07-12 |
2013-07-02 |
Apple Inc. |
Adaptive over-provisioning in memory systems
|
US8144511B2
(en)
|
2009-08-19 |
2012-03-27 |
Sandisk Technologies Inc. |
Selective memory cell program and erase
|
US8400854B2
(en)
|
2009-09-11 |
2013-03-19 |
Sandisk Technologies Inc. |
Identifying at-risk data in non-volatile storage
|
US8386739B2
(en)
*
|
2009-09-28 |
2013-02-26 |
International Business Machines Corporation |
Writing to memory using shared address buses
|
US8230276B2
(en)
*
|
2009-09-28 |
2012-07-24 |
International Business Machines Corporation |
Writing to memory using adaptive write techniques
|
US8495465B1
(en)
|
2009-10-15 |
2013-07-23 |
Apple Inc. |
Error correction coding over multiple memory pages
|
US8634240B2
(en)
*
|
2009-10-28 |
2014-01-21 |
SanDisk Technologies, Inc. |
Non-volatile memory and method with accelerated post-write read to manage errors
|
US8423866B2
(en)
|
2009-10-28 |
2013-04-16 |
SanDisk Technologies, Inc. |
Non-volatile memory and method with post-write read and adaptive re-write to manage errors
|
US8214700B2
(en)
*
|
2009-10-28 |
2012-07-03 |
Sandisk Technologies Inc. |
Non-volatile memory and method with post-write read and adaptive re-write to manage errors
|
US8174895B2
(en)
*
|
2009-12-15 |
2012-05-08 |
Sandisk Technologies Inc. |
Programming non-volatile storage with fast bit detection and verify skip
|
US8677054B1
(en)
|
2009-12-16 |
2014-03-18 |
Apple Inc. |
Memory management schemes for non-volatile memory devices
|
US20110153912A1
(en)
|
2009-12-18 |
2011-06-23 |
Sergey Anatolievich Gorobets |
Maintaining Updates of Multi-Level Non-Volatile Memory in Binary Non-Volatile Memory
|
US8468294B2
(en)
|
2009-12-18 |
2013-06-18 |
Sandisk Technologies Inc. |
Non-volatile memory with multi-gear control using on-chip folding of data
|
US8725935B2
(en)
|
2009-12-18 |
2014-05-13 |
Sandisk Technologies Inc. |
Balanced performance for on-chip folding of non-volatile memories
|
US8054684B2
(en)
*
|
2009-12-18 |
2011-11-08 |
Sandisk Technologies Inc. |
Non-volatile memory and method with atomic program sequence and write abort detection
|
US8144512B2
(en)
|
2009-12-18 |
2012-03-27 |
Sandisk Technologies Inc. |
Data transfer flows for on-chip folding
|
US8694814B1
(en)
|
2010-01-10 |
2014-04-08 |
Apple Inc. |
Reuse of host hibernation storage space by memory controller
|
US8677203B1
(en)
|
2010-01-11 |
2014-03-18 |
Apple Inc. |
Redundant data storage schemes for multi-die memory systems
|
US8213255B2
(en)
|
2010-02-19 |
2012-07-03 |
Sandisk Technologies Inc. |
Non-volatile storage with temperature compensation based on neighbor state information
|
US8243523B2
(en)
*
|
2010-03-09 |
2012-08-14 |
Micron Technology, Inc. |
Sensing operations in a memory device
|
KR20110107190A
(en)
*
|
2010-03-24 |
2011-09-30 |
삼성전자주식회사 |
Method and apparatus for wear-out cell management in resistive memories
|
US7888966B1
(en)
|
2010-03-25 |
2011-02-15 |
Sandisk Corporation |
Enhancement of input/output for non source-synchronous interfaces
|
US8463985B2
(en)
|
2010-03-31 |
2013-06-11 |
International Business Machines Corporation |
Constrained coding to reduce floating gate coupling in non-volatile memories
|
EP2559036A1
(en)
|
2010-04-15 |
2013-02-20 |
Ramot at Tel-Aviv University Ltd. |
Multiple programming of flash memory without erase
|
US8546214B2
(en)
|
2010-04-22 |
2013-10-01 |
Sandisk Technologies Inc. |
P-type control gate in non-volatile storage and methods for forming same
|
US8427874B2
(en)
|
2010-04-30 |
2013-04-23 |
SanDisk Technologies, Inc. |
Non-volatile memory and method with even/odd combined block decoding
|
US8694853B1
(en)
|
2010-05-04 |
2014-04-08 |
Apple Inc. |
Read commands for reading interfering memory cells
|
US9208899B2
(en)
*
|
2010-05-05 |
2015-12-08 |
Texas Instruments Incorporated |
Universal test structures based SRAM on-chip parametric test module and methods of operating and testing
|
US8416624B2
(en)
|
2010-05-21 |
2013-04-09 |
SanDisk Technologies, Inc. |
Erase and programming techniques to reduce the widening of state distributions in non-volatile memories
|
US8274831B2
(en)
|
2010-05-24 |
2012-09-25 |
Sandisk Technologies Inc. |
Programming non-volatile storage with synchronized coupling
|
US20110297912A1
(en)
|
2010-06-08 |
2011-12-08 |
George Samachisa |
Non-Volatile Memory Having 3d Array of Read/Write Elements with Vertical Bit Lines and Laterally Aligned Active Elements and Methods Thereof
|
US8526237B2
(en)
|
2010-06-08 |
2013-09-03 |
Sandisk 3D Llc |
Non-volatile memory having 3D array of read/write elements and read/write circuits and method thereof
|
US8572423B1
(en)
|
2010-06-22 |
2013-10-29 |
Apple Inc. |
Reducing peak current in memory systems
|
US8543757B2
(en)
|
2010-06-23 |
2013-09-24 |
Sandisk Technologies Inc. |
Techniques of maintaining logical to physical mapping information in non-volatile memory systems
|
US8417876B2
(en)
|
2010-06-23 |
2013-04-09 |
Sandisk Technologies Inc. |
Use of guard bands and phased maintenance operations to avoid exceeding maximum latency requirements in non-volatile memory systems
|
US8432732B2
(en)
|
2010-07-09 |
2013-04-30 |
Sandisk Technologies Inc. |
Detection of word-line leakage in memory arrays
|
US8514630B2
(en)
|
2010-07-09 |
2013-08-20 |
Sandisk Technologies Inc. |
Detection of word-line leakage in memory arrays: current based approach
|
US8305807B2
(en)
|
2010-07-09 |
2012-11-06 |
Sandisk Technologies Inc. |
Detection of broken word-lines in memory arrays
|
US8595591B1
(en)
|
2010-07-11 |
2013-11-26 |
Apple Inc. |
Interference-aware assignment of programming levels in analog memory cells
|
US9069688B2
(en)
|
2011-04-15 |
2015-06-30 |
Sandisk Technologies Inc. |
Dynamic optimization of back-end memory system interface
|
US8464135B2
(en)
|
2010-07-13 |
2013-06-11 |
Sandisk Technologies Inc. |
Adaptive flash interface
|
US8369156B2
(en)
|
2010-07-13 |
2013-02-05 |
Sandisk Technologies Inc. |
Fast random access to non-volatile storage
|
KR101719395B1
(en)
|
2010-07-13 |
2017-03-23 |
샌디스크 테크놀로지스 엘엘씨 |
Dynamic optimization of back-end memory system interface
|
US9104580B1
(en)
|
2010-07-27 |
2015-08-11 |
Apple Inc. |
Cache memory for hybrid disk drives
|
WO2012015438A1
(en)
*
|
2010-07-30 |
2012-02-02 |
Hewlett-Packard Development Company, L.P. |
Memory element and method for determining the data state of a memory element
|
US8645794B1
(en)
|
2010-07-31 |
2014-02-04 |
Apple Inc. |
Data storage in analog memory cells using a non-integer number of bits per cell
|
US8856475B1
(en)
|
2010-08-01 |
2014-10-07 |
Apple Inc. |
Efficient selection of memory blocks for compaction
|
US8238158B2
(en)
*
|
2010-08-04 |
2012-08-07 |
Texas Instruments Incorporated |
Programming of memory cells in a nonvolatile memory using an active transition control
|
US8694854B1
(en)
|
2010-08-17 |
2014-04-08 |
Apple Inc. |
Read threshold setting based on soft readout statistics
|
US9021181B1
(en)
|
2010-09-27 |
2015-04-28 |
Apple Inc. |
Memory management for unifying memory cell conditions by using maximum time intervals
|
US8374031B2
(en)
|
2010-09-29 |
2013-02-12 |
SanDisk Technologies, Inc. |
Techniques for the fast settling of word lines in NAND flash memory
|
US8279662B2
(en)
|
2010-11-11 |
2012-10-02 |
Seagate Technology Llc |
Multi-bit magnetic memory with independently programmable free layer domains
|
US8837216B2
(en)
|
2010-12-13 |
2014-09-16 |
Sandisk Technologies Inc. |
Non-volatile storage system with shared bit lines connected to a single selection device
|
US8885381B2
(en)
|
2010-12-14 |
2014-11-11 |
Sandisk 3D Llc |
Three dimensional non-volatile storage with dual gated vertical select devices
|
EP2731110B1
(en)
|
2010-12-14 |
2016-09-07 |
SanDisk Technologies LLC |
Architecture for three dimensional non-volatile storage with vertical bit lines
|
US9227456B2
(en)
|
2010-12-14 |
2016-01-05 |
Sandisk 3D Llc |
Memories with cylindrical read/write stacks
|
US8472280B2
(en)
|
2010-12-21 |
2013-06-25 |
Sandisk Technologies Inc. |
Alternate page by page programming scheme
|
US8099652B1
(en)
|
2010-12-23 |
2012-01-17 |
Sandisk Corporation |
Non-volatile memory and methods with reading soft bits in non uniform schemes
|
US8782495B2
(en)
*
|
2010-12-23 |
2014-07-15 |
Sandisk Il Ltd |
Non-volatile memory and methods with asymmetric soft read points around hard read points
|
US8498152B2
(en)
|
2010-12-23 |
2013-07-30 |
Sandisk Il Ltd. |
Non-volatile memory and methods with soft-bit reads while reading hard bits with compensation for coupling
|
US8472257B2
(en)
|
2011-03-24 |
2013-06-25 |
Sandisk Technologies Inc. |
Nonvolatile memory and method for improved programming with reduced verify
|
US9342446B2
(en)
|
2011-03-29 |
2016-05-17 |
SanDisk Technologies, Inc. |
Non-volatile memory system allowing reverse eviction of data updates to non-volatile binary cache
|
US8334796B2
(en)
|
2011-04-08 |
2012-12-18 |
Sandisk Technologies Inc. |
Hardware efficient on-chip digital temperature coefficient voltage generator and method
|
US8713380B2
(en)
|
2011-05-03 |
2014-04-29 |
SanDisk Technologies, Inc. |
Non-volatile memory and method having efficient on-chip block-copying with controlled error rate
|
US8379454B2
(en)
|
2011-05-05 |
2013-02-19 |
Sandisk Technologies Inc. |
Detection of broken word-lines in memory arrays
|
US8843693B2
(en)
|
2011-05-17 |
2014-09-23 |
SanDisk Technologies, Inc. |
Non-volatile memory and method with improved data scrambling
|
US9176864B2
(en)
|
2011-05-17 |
2015-11-03 |
SanDisk Technologies, Inc. |
Non-volatile memory and method having block management with hot/cold data sorting
|
US9141528B2
(en)
|
2011-05-17 |
2015-09-22 |
Sandisk Technologies Inc. |
Tracking and handling of super-hot data in non-volatile memory systems
|
KR20140040137A
(en)
|
2011-05-17 |
2014-04-02 |
샌디스크 테크놀로지스, 인코포레이티드 |
Non-volatile memory and method with small logical groups distributed among active slc and mlc memory partitions
|
US8456911B2
(en)
|
2011-06-07 |
2013-06-04 |
Sandisk Technologies Inc. |
Intelligent shifting of read pass voltages for non-volatile storage
|
US8427884B2
(en)
|
2011-06-20 |
2013-04-23 |
SanDisk Technologies, Inc. |
Bit scan circuits and method in non-volatile memory
|
US8995206B2
(en)
*
|
2011-07-14 |
2015-03-31 |
Technion Research And Development Foundation Ltd. |
Device, method and computer readable program for accessing memory cells using shortened read attempts
|
US8432740B2
(en)
|
2011-07-21 |
2013-04-30 |
Sandisk Technologies Inc. |
Program algorithm with staircase waveform decomposed into multiple passes
|
US8750042B2
(en)
|
2011-07-28 |
2014-06-10 |
Sandisk Technologies Inc. |
Combined simultaneous sensing of multiple wordlines in a post-write read (PWR) and detection of NAND failures
|
US8726104B2
(en)
|
2011-07-28 |
2014-05-13 |
Sandisk Technologies Inc. |
Non-volatile memory and method with accelerated post-write read using combined verification of multiple pages
|
US20130031431A1
(en)
|
2011-07-28 |
2013-01-31 |
Eran Sharon |
Post-Write Read in Non-Volatile Memories Using Comparison of Data as Written in Binary and Multi-State Formats
|
US8775901B2
(en)
|
2011-07-28 |
2014-07-08 |
SanDisk Technologies, Inc. |
Data recovery for defective word lines during programming of non-volatile memory arrays
|
US8495285B2
(en)
*
|
2011-08-31 |
2013-07-23 |
Micron Technology, Inc. |
Apparatuses and methods of operating for memory endurance
|
US8522178B2
(en)
*
|
2011-09-07 |
2013-08-27 |
Apple Inc. |
Re-modeling a memory array for accurate timing analysis
|
US8638606B2
(en)
|
2011-09-16 |
2014-01-28 |
Sandisk Technologies Inc. |
Substrate bias during program of non-volatile storage
|
WO2013043602A2
(en)
|
2011-09-19 |
2013-03-28 |
SanDisk Technologies, Inc. |
High endurance non-volatile storage
|
US8406053B1
(en)
|
2011-09-21 |
2013-03-26 |
Sandisk Technologies Inc. |
On chip dynamic read for non-volatile storage
|
US8705293B2
(en)
|
2011-10-20 |
2014-04-22 |
Sandisk Technologies Inc. |
Compact sense amplifier for non-volatile memory suitable for quick pass write
|
US8630120B2
(en)
|
2011-10-20 |
2014-01-14 |
Sandisk Technologies Inc. |
Compact sense amplifier for non-volatile memory
|
WO2013058960A2
(en)
|
2011-10-20 |
2013-04-25 |
Sandisk Technologies Inc. |
Compact sense amplifier for non-volatile memory
|
US8917554B2
(en)
|
2011-10-26 |
2014-12-23 |
Sandisk Technologies Inc. |
Back-biasing word line switch transistors
|
US8593866B2
(en)
|
2011-11-11 |
2013-11-26 |
Sandisk Technologies Inc. |
Systems and methods for operating multi-bank nonvolatile memory
|
US9076544B2
(en)
|
2011-11-18 |
2015-07-07 |
Sandisk Technologies Inc. |
Operation for non-volatile storage system with shared bit lines
|
EP2780912B1
(en)
|
2011-11-18 |
2016-10-26 |
SanDisk Technologies LLC |
Non-volatile storage with data recovery
|
US8687421B2
(en)
|
2011-11-21 |
2014-04-01 |
Sandisk Technologies Inc. |
Scrub techniques for use with dynamic read
|
US8811091B2
(en)
|
2011-12-16 |
2014-08-19 |
SanDisk Technologies, Inc. |
Non-volatile memory and method with improved first pass programming
|
US9036415B2
(en)
|
2011-12-21 |
2015-05-19 |
Sandisk Technologies Inc. |
Mitigating variations arising from simultaneous multi-state sensing
|
US8885404B2
(en)
|
2011-12-24 |
2014-11-11 |
Sandisk Technologies Inc. |
Non-volatile storage system with three layer floating gate
|
US8634239B2
(en)
|
2011-12-28 |
2014-01-21 |
Sandisk Technologies Inc. |
Hybrid multi-level cell programming sequences
|
US9269425B2
(en)
|
2011-12-30 |
2016-02-23 |
Sandisk 3D Llc |
Low forming voltage non-volatile storage device
|
US8811075B2
(en)
|
2012-01-06 |
2014-08-19 |
Sandisk Technologies Inc. |
Charge cycling by equalizing and regulating the source, well, and bit line levels during write operations for NAND flash memory: verify to program transition
|
US8780608B2
(en)
|
2012-01-23 |
2014-07-15 |
Micron Technology, Inc. |
Apparatuses and methods for reading and/or programming data in memory arrays having varying available storage ranges
|
US8582381B2
(en)
|
2012-02-23 |
2013-11-12 |
SanDisk Technologies, Inc. |
Temperature based compensation during verify operations for non-volatile storage
|
US8730722B2
(en)
|
2012-03-02 |
2014-05-20 |
Sandisk Technologies Inc. |
Saving of data in cases of word-line to word-line short in memory arrays
|
US8730723B2
(en)
*
|
2012-03-12 |
2014-05-20 |
Flashsilicon Incorporation |
Structures and methods of high efficient bit conversion for multi-level cell non-volatile memories
|
US8937835B2
(en)
|
2012-03-13 |
2015-01-20 |
Sandisk Technologies Inc. |
Non-volatile storage with read process that reduces disturb
|
US8842473B2
(en)
|
2012-03-15 |
2014-09-23 |
Sandisk Technologies Inc. |
Techniques for accessing column selecting shift register with skipped entries in non-volatile memories
|
US8817569B2
(en)
|
2012-03-19 |
2014-08-26 |
Sandisk Technologies Inc. |
Immunity against temporary and short power drops in non-volatile memory
|
US8638608B2
(en)
|
2012-03-26 |
2014-01-28 |
Sandisk Technologies Inc. |
Selected word line dependent select gate voltage during program
|
US8804425B2
(en)
|
2012-03-26 |
2014-08-12 |
Sandisk Technologies Inc. |
Selected word line dependent programming voltage
|
US8804430B2
(en)
|
2012-03-26 |
2014-08-12 |
Sandisk Technologies Inc. |
Selected word line dependent select gate diffusion region voltage during programming
|
US8760957B2
(en)
|
2012-03-27 |
2014-06-24 |
SanDisk Technologies, Inc. |
Non-volatile memory and method having a memory array with a high-speed, short bit-line portion
|
US8732391B2
(en)
|
2012-04-23 |
2014-05-20 |
Sandisk Technologies Inc. |
Obsolete block management for data retention in nonvolatile memory
|
US8995183B2
(en)
|
2012-04-23 |
2015-03-31 |
Sandisk Technologies Inc. |
Data retention in nonvolatile memory with multiple data storage formats
|
US8681548B2
(en)
|
2012-05-03 |
2014-03-25 |
Sandisk Technologies Inc. |
Column redundancy circuitry for non-volatile memory
|
US8937837B2
(en)
|
2012-05-08 |
2015-01-20 |
Sandisk Technologies Inc. |
Bit line BL isolation scheme during erase operation for non-volatile storage
|
US9171584B2
(en)
|
2012-05-15 |
2015-10-27 |
Sandisk 3D Llc |
Three dimensional non-volatile storage with interleaved vertical select devices above and below vertical bit lines
|
US9281029B2
(en)
|
2012-06-15 |
2016-03-08 |
Sandisk 3D Llc |
Non-volatile memory having 3D array architecture with bit line voltage control and methods thereof
|
US9147439B2
(en)
|
2012-06-15 |
2015-09-29 |
Sandisk 3D Llc |
Non-volatile memory having 3D array architecture with staircase word lines and vertical bit lines and methods thereof
|
US9142305B2
(en)
|
2012-06-28 |
2015-09-22 |
Sandisk Technologies Inc. |
System to reduce stress on word line select transistor during erase operation
|
US20140003176A1
(en)
|
2012-06-28 |
2014-01-02 |
Man Lung Mui |
Compact High Speed Sense Amplifier for Non-Volatile Memory with Reduced layout Area and Power Consumption
|
US9293195B2
(en)
|
2012-06-28 |
2016-03-22 |
Sandisk Technologies Inc. |
Compact high speed sense amplifier for non-volatile memory
|
US8971141B2
(en)
|
2012-06-28 |
2015-03-03 |
Sandisk Technologies Inc. |
Compact high speed sense amplifier for non-volatile memory and hybrid lockout
|
US8566671B1
(en)
|
2012-06-29 |
2013-10-22 |
Sandisk Technologies Inc. |
Configurable accelerated post-write read to manage errors
|
US9053819B2
(en)
|
2012-07-11 |
2015-06-09 |
Sandisk Technologies Inc. |
Programming method to tighten threshold voltage width with avoiding program disturb
|
US8830745B2
(en)
|
2012-07-17 |
2014-09-09 |
Sandisk Technologies Inc. |
Memory system with unverified program step
|
US8854900B2
(en)
|
2012-07-26 |
2014-10-07 |
SanDisk Technologies, Inc. |
Non-volatile memory and method with peak current control
|
US8750045B2
(en)
|
2012-07-27 |
2014-06-10 |
Sandisk Technologies Inc. |
Experience count dependent program algorithm for flash memory
|
US8737125B2
(en)
|
2012-08-07 |
2014-05-27 |
Sandisk Technologies Inc. |
Aggregating data latches for program level determination
|
US8730724B2
(en)
|
2012-08-07 |
2014-05-20 |
Sandisk Technologies Inc. |
Common line current for program level determination in flash memory
|
CA2820253C
(en)
|
2012-08-08 |
2020-10-27 |
Shrenik Shah |
System and method for improving impact safety
|
US9036417B2
(en)
|
2012-09-06 |
2015-05-19 |
Sandisk Technologies Inc. |
On chip dynamic read level scan and error detection for nonvolatile storage
|
US20140071761A1
(en)
|
2012-09-10 |
2014-03-13 |
Sandisk Technologies Inc. |
Non-volatile storage with joint hard bit and soft bit reading
|
US9329986B2
(en)
|
2012-09-10 |
2016-05-03 |
Sandisk Technologies Inc. |
Peak current management in multi-die non-volatile memory devices
|
US8887011B2
(en)
|
2012-09-13 |
2014-11-11 |
Sandisk Technologies Inc. |
Erased page confirmation in multilevel memory
|
US9810723B2
(en)
|
2012-09-27 |
2017-11-07 |
Sandisk Technologies Llc |
Charge pump based over-sampling ADC for current detection
|
US9164526B2
(en)
|
2012-09-27 |
2015-10-20 |
Sandisk Technologies Inc. |
Sigma delta over-sampling charge pump analog-to-digital converter
|
US9490035B2
(en)
|
2012-09-28 |
2016-11-08 |
SanDisk Technologies, Inc. |
Centralized variable rate serializer and deserializer for bad column management
|
US9076506B2
(en)
|
2012-09-28 |
2015-07-07 |
Sandisk Technologies Inc. |
Variable rate parallel to serial shift register
|
US9053011B2
(en)
|
2012-09-28 |
2015-06-09 |
Sandisk Technologies Inc. |
Selective protection of lower page data during upper page write
|
US8897080B2
(en)
|
2012-09-28 |
2014-11-25 |
Sandisk Technologies Inc. |
Variable rate serial to parallel shift register
|
US9047974B2
(en)
|
2012-10-04 |
2015-06-02 |
Sandisk Technologies Inc. |
Erased state reading
|
US20140108705A1
(en)
|
2012-10-12 |
2014-04-17 |
Sandisk Technologies Inc. |
Use of High Endurance Non-Volatile Memory for Read Acceleration
|
US9159406B2
(en)
|
2012-11-02 |
2015-10-13 |
Sandisk Technologies Inc. |
Single-level cell endurance improvement with pre-defined blocks
|
US9466382B2
(en)
|
2012-11-14 |
2016-10-11 |
Sandisk Technologies Llc |
Compensation for sub-block erase
|
US8830717B2
(en)
|
2012-11-29 |
2014-09-09 |
Sandisk Technologies Inc. |
Optimized configurable NAND parameters
|
US9171620B2
(en)
|
2012-11-29 |
2015-10-27 |
Sandisk Technologies Inc. |
Weighted read scrub for nonvolatile memory
|
US9183945B2
(en)
|
2012-11-30 |
2015-11-10 |
Sandisk Technologies Inc. |
Systems and methods to avoid false verify and false read
|
US9146807B2
(en)
|
2012-12-04 |
2015-09-29 |
Sandisk Technologies Inc. |
Bad column handling in flash memory
|
US9087601B2
(en)
|
2012-12-06 |
2015-07-21 |
Sandisk Technologies Inc. |
Select gate bias during program of non-volatile storage
|
US8995184B2
(en)
|
2012-12-06 |
2015-03-31 |
Sandisk Technologies Inc. |
Adaptive operation of multi level cell memory
|
US9104591B2
(en)
|
2012-12-11 |
2015-08-11 |
Sandisk Technologies Inc. |
Data recovery on cluster failures and ECC enhancements with code word interleaving
|
US9025374B2
(en)
|
2012-12-13 |
2015-05-05 |
Sandisk Technologies Inc. |
System and method to update read voltages in a non-volatile memory in response to tracking data
|
US8988941B2
(en)
|
2012-12-18 |
2015-03-24 |
SanDisk Tehcnologies Inc. |
Select transistor tuning
|
US8923065B2
(en)
|
2012-12-31 |
2014-12-30 |
SanDisk Technologies, Inc. |
Nonvolatile memory and method with improved I/O interface
|
US9076545B2
(en)
|
2013-01-17 |
2015-07-07 |
Sandisk Tecnologies Inc. |
Dynamic adjustment of read voltage levels based on memory cell threshold voltage distribution
|
US9026757B2
(en)
|
2013-01-25 |
2015-05-05 |
Sandisk Technologies Inc. |
Non-volatile memory programming data preservation
|
US8913428B2
(en)
|
2013-01-25 |
2014-12-16 |
Sandisk Technologies Inc. |
Programming non-volatile storage system with multiple memory die
|
US8885416B2
(en)
|
2013-01-30 |
2014-11-11 |
Sandisk Technologies Inc. |
Bit line current trip point modulation for reading nonvolatile storage elements
|
US9098205B2
(en)
|
2013-01-30 |
2015-08-04 |
Sandisk Technologies Inc. |
Data randomization in 3-D memory
|
US8971128B2
(en)
|
2013-01-31 |
2015-03-03 |
Sandisk Technologies Inc. |
Adaptive initial program voltage for non-volatile memory
|
US8929142B2
(en)
*
|
2013-02-05 |
2015-01-06 |
Sandisk Technologies Inc. |
Programming select gate transistors and memory cells using dynamic verify level
|
US8995195B2
(en)
|
2013-02-12 |
2015-03-31 |
Sandisk Technologies Inc. |
Fast-reading NAND flash memory
|
US9411722B2
(en)
|
2013-03-04 |
2016-08-09 |
Sandisk Technologies Llc |
Asynchronous FIFO buffer for memory access
|
US9202694B2
(en)
|
2013-03-04 |
2015-12-01 |
Sandisk 3D Llc |
Vertical bit line non-volatile memory systems and methods of fabrication
|
US9064547B2
(en)
|
2013-03-05 |
2015-06-23 |
Sandisk 3D Llc |
3D non-volatile memory having low-current cells and methods
|
US9384839B2
(en)
|
2013-03-07 |
2016-07-05 |
Sandisk Technologies Llc |
Write sequence providing write abort protection
|
US9165933B2
(en)
|
2013-03-07 |
2015-10-20 |
Sandisk 3D Llc |
Vertical bit line TFT decoder for high voltage operation
|
US9349452B2
(en)
|
2013-03-07 |
2016-05-24 |
Sandisk Technologies Inc. |
Hybrid non-volatile memory cells for shared bit line
|
US9053810B2
(en)
*
|
2013-03-08 |
2015-06-09 |
Sandisk Technologies Inc. |
Defect or program disturb detection with full data recovery capability
|
US9165656B2
(en)
|
2013-03-11 |
2015-10-20 |
Sandisk Technologies Inc. |
Non-volatile storage with shared bit lines and flat memory cells
|
US8988947B2
(en)
|
2013-03-25 |
2015-03-24 |
Sandisk Technologies Inc. |
Back bias during program verify of non-volatile storage
|
US9070449B2
(en)
|
2013-04-26 |
2015-06-30 |
Sandisk Technologies Inc. |
Defective block management
|
US9218890B2
(en)
|
2013-06-03 |
2015-12-22 |
Sandisk Technologies Inc. |
Adaptive operation of three dimensional memory
|
US9183086B2
(en)
*
|
2013-06-03 |
2015-11-10 |
Sandisk Technologies Inc. |
Selection of data for redundancy calculation in three dimensional nonvolatile memory
|
US9230656B2
(en)
|
2013-06-26 |
2016-01-05 |
Sandisk Technologies Inc. |
System for maintaining back gate threshold voltage in three dimensional NAND memory
|
US20150006784A1
(en)
|
2013-06-27 |
2015-01-01 |
Sandisk Technologies Inc. |
Efficient Post Write Read in Three Dimensional Nonvolatile Memory
|
US9218242B2
(en)
|
2013-07-02 |
2015-12-22 |
Sandisk Technologies Inc. |
Write operations for defect management in nonvolatile memory
|
US9063671B2
(en)
|
2013-07-02 |
2015-06-23 |
Sandisk Technologies Inc. |
Write operations with full sequence programming for defect management in nonvolatile memory
|
US9177663B2
(en)
|
2013-07-18 |
2015-11-03 |
Sandisk Technologies Inc. |
Dynamic regulation of memory array source line
|
KR102133362B1
(en)
*
|
2013-08-14 |
2020-07-15 |
삼성전자주식회사 |
Nonvolatile memory device, memory system having the same, and programming method thereof
|
US9442842B2
(en)
|
2013-08-19 |
2016-09-13 |
Sandisk Technologies Llc |
Memory system performance configuration
|
US9142324B2
(en)
|
2013-09-03 |
2015-09-22 |
Sandisk Technologies Inc. |
Bad block reconfiguration in nonvolatile memory
|
US9105468B2
(en)
|
2013-09-06 |
2015-08-11 |
Sandisk 3D Llc |
Vertical bit line wide band gap TFT decoder
|
US9342401B2
(en)
|
2013-09-16 |
2016-05-17 |
Sandisk Technologies Inc. |
Selective in-situ retouching of data in nonvolatile memory
|
US9240238B2
(en)
|
2013-09-20 |
2016-01-19 |
Sandisk Technologies Inc. |
Back gate operation with elevated threshold voltage
|
US9165683B2
(en)
|
2013-09-23 |
2015-10-20 |
Sandisk Technologies Inc. |
Multi-word line erratic programming detection
|
US8929141B1
(en)
|
2013-10-02 |
2015-01-06 |
Sandisk Technologies Inc. |
Three-dimensional NAND memory with adaptive erase
|
US20150121156A1
(en)
|
2013-10-28 |
2015-04-30 |
Sandisk Technologies Inc. |
Block Structure Profiling in Three Dimensional Memory
|
US9177673B2
(en)
|
2013-10-28 |
2015-11-03 |
Sandisk Technologies Inc. |
Selection of data for redundancy calculation by likely error rate
|
US9501400B2
(en)
|
2013-11-13 |
2016-11-22 |
Sandisk Technologies Llc |
Identification and operation of sub-prime blocks in nonvolatile memory
|
US9411721B2
(en)
|
2013-11-15 |
2016-08-09 |
Sandisk Technologies Llc |
Detecting access sequences for data compression on non-volatile memory devices
|
US9043537B1
(en)
|
2013-11-21 |
2015-05-26 |
Sandisk Technologies Inc. |
Update block programming order
|
US9229644B2
(en)
|
2013-11-25 |
2016-01-05 |
Sandisk Technologies Inc. |
Targeted copy of data relocation
|
US9141291B2
(en)
|
2013-11-26 |
2015-09-22 |
Sandisk Technologies Inc. |
Adaptive context disbursement for improved performance in non-volatile memory systems
|
US9213601B2
(en)
|
2013-12-03 |
2015-12-15 |
Sandisk Technologies Inc. |
Adaptive data re-compaction after post-write read verification operations
|
US9058881B1
(en)
|
2013-12-05 |
2015-06-16 |
Sandisk Technologies Inc. |
Systems and methods for partial page programming of multi level cells
|
US9244631B2
(en)
|
2013-12-06 |
2016-01-26 |
Sandisk Technologies Inc. |
Lower page only host burst writes
|
US9093158B2
(en)
|
2013-12-06 |
2015-07-28 |
Sandisk Technologies Inc. |
Write scheme for charge trapping memory
|
US9218886B2
(en)
|
2013-12-10 |
2015-12-22 |
SanDisk Technologies, Inc. |
String dependent parameter setup
|
US9129701B2
(en)
|
2013-12-19 |
2015-09-08 |
Sandisk Technologies Inc. |
Asymmetric state detection for non-volatile storage
|
US9208023B2
(en)
|
2013-12-23 |
2015-12-08 |
Sandisk Technologies Inc. |
Systems and methods for scheduling post-write read in nonvolatile memory
|
US9466383B2
(en)
|
2013-12-30 |
2016-10-11 |
Sandisk Technologies Llc |
Non-volatile memory and method with adaptive logical groups
|
US9620182B2
(en)
|
2013-12-31 |
2017-04-11 |
Sandisk Technologies Llc |
Pulse mechanism for memory circuit interruption
|
US9368224B2
(en)
|
2014-02-07 |
2016-06-14 |
SanDisk Technologies, Inc. |
Self-adjusting regulation current for memory array source line
|
US9542344B2
(en)
|
2014-02-19 |
2017-01-10 |
Sandisk Technologies Llc |
Datapath management in a memory controller
|
US9362338B2
(en)
|
2014-03-03 |
2016-06-07 |
Sandisk Technologies Inc. |
Vertical thin film transistors in non-volatile storage systems
|
US9379246B2
(en)
|
2014-03-05 |
2016-06-28 |
Sandisk Technologies Inc. |
Vertical thin film transistor selection devices and methods of fabrication
|
US9230689B2
(en)
|
2014-03-17 |
2016-01-05 |
Sandisk Technologies Inc. |
Finding read disturbs on non-volatile memories
|
US9123392B1
(en)
|
2014-03-28 |
2015-09-01 |
Sandisk 3D Llc |
Non-volatile 3D memory with cell-selectable word line decoding
|
US9384128B2
(en)
|
2014-04-18 |
2016-07-05 |
SanDisk Technologies, Inc. |
Multi-level redundancy code for non-volatile memory controller
|
US8902652B1
(en)
|
2014-05-13 |
2014-12-02 |
Sandisk Technologies Inc. |
Systems and methods for lower page writes
|
US8929169B1
(en)
|
2014-05-13 |
2015-01-06 |
Sandisk Technologies Inc. |
Power management for nonvolatile memory array
|
US8886877B1
(en)
|
2014-05-15 |
2014-11-11 |
Sandisk Technologies Inc. |
In-situ block folding for nonvolatile memory
|
US9015561B1
(en)
|
2014-06-11 |
2015-04-21 |
Sandisk Technologies Inc. |
Adaptive redundancy in three dimensional memory
|
US8918577B1
(en)
|
2014-06-13 |
2014-12-23 |
Sandisk Technologies Inc. |
Three dimensional nonvolatile memory with variable block capacity
|
US9483339B2
(en)
|
2014-06-27 |
2016-11-01 |
Sandisk Technologies Llc |
Systems and methods for fast bit error rate estimation
|
US9443612B2
(en)
|
2014-07-10 |
2016-09-13 |
Sandisk Technologies Llc |
Determination of bit line to low voltage signal shorts
|
US9484086B2
(en)
|
2014-07-10 |
2016-11-01 |
Sandisk Technologies Llc |
Determination of word line to local source line shorts
|
US9460809B2
(en)
|
2014-07-10 |
2016-10-04 |
Sandisk Technologies Llc |
AC stress mode to screen out word line to word line shorts
|
US9633742B2
(en)
|
2014-07-10 |
2017-04-25 |
Sandisk Technologies Llc |
Segmentation of blocks for faster bit line settling/recovery in non-volatile memory devices
|
US9514835B2
(en)
|
2014-07-10 |
2016-12-06 |
Sandisk Technologies Llc |
Determination of word line to word line shorts between adjacent blocks
|
US9627009B2
(en)
|
2014-07-25 |
2017-04-18 |
Sandisk Technologies Llc |
Interleaved grouped word lines for three dimensional non-volatile storage
|
US9218874B1
(en)
|
2014-08-11 |
2015-12-22 |
Sandisk Technologies Inc. |
Multi-pulse programming cycle of non-volatile memory for enhanced de-trapping
|
US9208895B1
(en)
|
2014-08-14 |
2015-12-08 |
Sandisk Technologies Inc. |
Cell current control through power supply
|
US9330776B2
(en)
|
2014-08-14 |
2016-05-03 |
Sandisk Technologies Inc. |
High voltage step down regulator with breakdown protection
|
US9305648B2
(en)
|
2014-08-20 |
2016-04-05 |
SanDisk Technologies, Inc. |
Techniques for programming of select gates in NAND memory
|
US9312026B2
(en)
|
2014-08-22 |
2016-04-12 |
Sandisk Technologies Inc. |
Zoned erase verify in three dimensional nonvolatile memory
|
US9349468B2
(en)
|
2014-08-25 |
2016-05-24 |
SanDisk Technologies, Inc. |
Operational amplifier methods for charging of sense amplifier internal nodes
|
US9202593B1
(en)
|
2014-09-02 |
2015-12-01 |
Sandisk Technologies Inc. |
Techniques for detecting broken word lines in non-volatile memories
|
US9240249B1
(en)
|
2014-09-02 |
2016-01-19 |
Sandisk Technologies Inc. |
AC stress methods to screen out bit line defects
|
US9449694B2
(en)
|
2014-09-04 |
2016-09-20 |
Sandisk Technologies Llc |
Non-volatile memory with multi-word line select for defect detection operations
|
US9411669B2
(en)
|
2014-09-11 |
2016-08-09 |
Sandisk Technologies Llc |
Selective sampling of data stored in nonvolatile memory
|
CN106796819B
(en)
|
2014-09-12 |
2020-06-16 |
东芝存储器株式会社 |
Nonvolatile semiconductor memory device
|
US9418750B2
(en)
|
2014-09-15 |
2016-08-16 |
Sandisk Technologies Llc |
Single ended word line and bit line time constant measurement
|
US10114562B2
(en)
|
2014-09-16 |
2018-10-30 |
Sandisk Technologies Llc |
Adaptive block allocation in nonvolatile memory
|
US9419006B2
(en)
|
2014-09-24 |
2016-08-16 |
Sandisk Technologies Llc |
Process for 3D NAND memory with socketed floating gate cells
|
US9496272B2
(en)
|
2014-09-24 |
2016-11-15 |
Sandisk Technologies Llc |
3D memory having NAND strings switched by transistors with elongated polysilicon gates
|
US9595338B2
(en)
|
2014-09-24 |
2017-03-14 |
Sandisk Technologies Llc |
Utilizing NAND strings in dummy blocks for faster bit line precharge
|
US9431411B1
(en)
|
2014-09-24 |
2016-08-30 |
Sandisk Technologies Llc |
Efficient process for 3D NAND memory with socketed floating gate cells
|
US9318204B1
(en)
|
2014-10-07 |
2016-04-19 |
SanDisk Technologies, Inc. |
Non-volatile memory and method with adjusted timing for individual programming pulses
|
US9443606B2
(en)
|
2014-10-28 |
2016-09-13 |
Sandisk Technologies Llc |
Word line dependent two strobe sensing mode for nonvolatile storage elements
|
US20160118135A1
(en)
|
2014-10-28 |
2016-04-28 |
Sandisk Technologies Inc. |
Two-strobe sensing for nonvolatile storage
|
US9552171B2
(en)
|
2014-10-29 |
2017-01-24 |
Sandisk Technologies Llc |
Read scrub with adaptive counter management
|
US9934872B2
(en)
|
2014-10-30 |
2018-04-03 |
Sandisk Technologies Llc |
Erase stress and delta erase loop count methods for various fail modes in non-volatile memory
|
US9978456B2
(en)
|
2014-11-17 |
2018-05-22 |
Sandisk Technologies Llc |
Techniques for reducing read disturb in partially written blocks of non-volatile memory
|
US9349479B1
(en)
|
2014-11-18 |
2016-05-24 |
Sandisk Technologies Inc. |
Boundary word line operation in nonvolatile memory
|
US9947682B2
(en)
|
2014-11-18 |
2018-04-17 |
Sandisk Technologies Llc |
Three dimensional non-volatile memory with separate source lines
|
US9406377B2
(en)
|
2014-12-08 |
2016-08-02 |
Sandisk Technologies Llc |
Rewritable multibit non-volatile memory with soft decode optimization
|
US10497409B2
(en)
|
2014-12-17 |
2019-12-03 |
International Business Machines Corporation |
Implementing DRAM row hammer avoidance
|
US9361990B1
(en)
|
2014-12-18 |
2016-06-07 |
SanDisk Technologies, Inc. |
Time domain ramp rate control for erase inhibit in flash memory
|
US20160189786A1
(en)
|
2014-12-24 |
2016-06-30 |
Sandisk Technologies Inc. |
Methods and apparatus for reducing read time for nonvolatile memory devices
|
US9385721B1
(en)
|
2015-01-14 |
2016-07-05 |
Sandisk Technologies Llc |
Bulk driven low swing driver
|
US9224502B1
(en)
|
2015-01-14 |
2015-12-29 |
Sandisk Technologies Inc. |
Techniques for detection and treating memory hole to local interconnect marginality defects
|
US9543023B2
(en)
|
2015-01-23 |
2017-01-10 |
Sandisk Technologies Llc |
Partial block erase for block programming in non-volatile memory
|
US9236128B1
(en)
|
2015-02-02 |
2016-01-12 |
Sandisk Technologies Inc. |
Voltage kick to non-selected word line during programming
|
US9318210B1
(en)
|
2015-02-02 |
2016-04-19 |
Sandisk Technologies Inc. |
Word line kick during sensing: trimming and adjacent word lines
|
US9959067B2
(en)
|
2015-02-04 |
2018-05-01 |
Sandisk Technologies Llc |
Memory block allocation by block health
|
US10032524B2
(en)
|
2015-02-09 |
2018-07-24 |
Sandisk Technologies Llc |
Techniques for determining local interconnect defects
|
US9583207B2
(en)
|
2015-02-10 |
2017-02-28 |
Sandisk Technologies Llc |
Adaptive data shaping in nonvolatile memory
|
US9449700B2
(en)
|
2015-02-13 |
2016-09-20 |
Sandisk Technologies Llc |
Boundary word line search and open block read methods with reduced read disturb
|
US10055267B2
(en)
|
2015-03-04 |
2018-08-21 |
Sandisk Technologies Llc |
Block management scheme to handle cluster failures in non-volatile memory
|
US9318209B1
(en)
|
2015-03-24 |
2016-04-19 |
Sandisk Technologies Inc. |
Digitally controlled source side select gate offset in 3D NAND memory erase
|
US9450023B1
(en)
|
2015-04-08 |
2016-09-20 |
Sandisk Technologies Llc |
Vertical bit line non-volatile memory with recessed word lines
|
US9269446B1
(en)
|
2015-04-08 |
2016-02-23 |
Sandisk Technologies Inc. |
Methods to improve programming of slow cells
|
US20160300620A1
(en)
|
2015-04-08 |
2016-10-13 |
Sandisk Technologies Inc. |
Multiple bit line voltage sensing for non-volatile memory
|
US9564219B2
(en)
|
2015-04-08 |
2017-02-07 |
Sandisk Technologies Llc |
Current based detection and recording of memory hole-interconnect spacing defects
|
US9502123B2
(en)
|
2015-04-21 |
2016-11-22 |
Sandisk Technologies Llc |
Adaptive block parameters
|
US9478308B1
(en)
*
|
2015-05-26 |
2016-10-25 |
Intel IP Corporation |
Programmable memory device sense amplifier
|
US9595317B2
(en)
|
2015-05-28 |
2017-03-14 |
Sandisk Technologies Llc |
Multi-state programming for non-volatile memory
|
US9922719B2
(en)
*
|
2015-06-07 |
2018-03-20 |
Sandisk Technologies Llc |
Multi-VT sensing method by varying bit line voltage
|
US9484098B1
(en)
|
2015-08-05 |
2016-11-01 |
Sandisk Technologies Llc |
Smart reread in nonvolatile memory
|
US9659666B2
(en)
|
2015-08-31 |
2017-05-23 |
Sandisk Technologies Llc |
Dynamic memory recovery at the sub-block level
|
KR20170030697A
(en)
*
|
2015-09-09 |
2017-03-20 |
에스케이하이닉스 주식회사 |
Non-volatile memory device having uniform threshold voltage and method of programming the same
|
US10157681B2
(en)
|
2015-09-14 |
2018-12-18 |
Sandisk Technologies Llc |
Programming of nonvolatile memory with verify level dependent on memory state and programming loop count
|
US9653154B2
(en)
|
2015-09-21 |
2017-05-16 |
Sandisk Technologies Llc |
Write abort detection for multi-state memories
|
US9691473B2
(en)
|
2015-09-22 |
2017-06-27 |
Sandisk Technologies Llc |
Adaptive operation of 3D memory
|
US9401216B1
(en)
|
2015-09-22 |
2016-07-26 |
Sandisk Technologies Llc |
Adaptive operation of 3D NAND memory
|
US9792175B2
(en)
|
2015-10-21 |
2017-10-17 |
Sandisk Technologies Llc |
Bad column management in nonvolatile memory
|
US9715924B2
(en)
|
2015-10-22 |
2017-07-25 |
Sandisk Technologies Llc |
Three dimensional non-volatile memory with current sensing programming status
|
US9858009B2
(en)
|
2015-10-26 |
2018-01-02 |
Sandisk Technologies Llc |
Data folding in 3D nonvolatile memory
|
JP2017111847A
(en)
|
2015-12-17 |
2017-06-22 |
株式会社東芝 |
Semiconductor memory device
|
US9698676B1
(en)
|
2016-03-11 |
2017-07-04 |
Sandisk Technologies Llc |
Charge pump based over-sampling with uniform step size for current detection
|
JP6416141B2
(en)
|
2016-03-11 |
2018-10-31 |
東芝メモリ株式会社 |
Memory device
|
US10248499B2
(en)
|
2016-06-24 |
2019-04-02 |
Sandisk Technologies Llc |
Non-volatile storage system using two pass programming with bit error control
|
US9817593B1
(en)
|
2016-07-11 |
2017-11-14 |
Sandisk Technologies Llc |
Block management in non-volatile memory system with non-blocking control sync system
|
US10340010B2
(en)
|
2016-08-16 |
2019-07-02 |
Silicon Storage Technology, Inc. |
Method and apparatus for configuring array columns and rows for accessing flash memory cells
|
US10061524B2
(en)
|
2016-09-01 |
2018-08-28 |
International Business Machines Corporation |
Wear-leveling of memory devices
|
US9792994B1
(en)
|
2016-09-28 |
2017-10-17 |
Sandisk Technologies Llc |
Bulk modulation scheme to reduce I/O pin capacitance
|
US9685239B1
(en)
*
|
2016-10-12 |
2017-06-20 |
Pegasus Semiconductor (Beijing) Co., Ltd |
Field sub-bitline nor flash array
|
US9842657B1
(en)
|
2017-05-18 |
2017-12-12 |
Sandisk Technologies Llc |
Multi-state program using controlled weak boosting for non-volatile memory
|
US10678768B2
(en)
*
|
2017-06-30 |
2020-06-09 |
Intel Corporation |
Logical band-based key-value storage structure
|
US10304550B1
(en)
|
2017-11-29 |
2019-05-28 |
Sandisk Technologies Llc |
Sense amplifier with negative threshold sensing for non-volatile memory
|
US10497866B1
(en)
|
2018-06-19 |
2019-12-03 |
National Technology & Engineering Solutions Of Sandia, Llc |
Ionic floating-gate memory device
|
KR102641097B1
(en)
*
|
2018-12-31 |
2024-02-27 |
삼성전자주식회사 |
Resistive memory device and programming method of the same
|
US10643695B1
(en)
|
2019-01-10 |
2020-05-05 |
Sandisk Technologies Llc |
Concurrent multi-state program verify for non-volatile memory
|
WO2021024241A1
(en)
*
|
2019-08-04 |
2021-02-11 |
Healables, Ltd. |
Variable frequency waveform synthesis using fixed size data arrays and constant loop rate
|
US11107535B2
(en)
*
|
2019-09-10 |
2021-08-31 |
Adesto Technologies Corporation |
Memory device with adaptive noise and voltage suppression during read-while-write operations
|
KR20210058568A
(en)
|
2019-11-14 |
2021-05-24 |
삼성전자주식회사 |
Resistive memory device controlling bitline voltage
|
US11024392B1
(en)
|
2019-12-23 |
2021-06-01 |
Sandisk Technologies Llc |
Sense amplifier for bidirectional sensing of memory cells of a non-volatile memory
|
US11081162B1
(en)
|
2020-02-24 |
2021-08-03 |
Sandisk Technologies Llc |
Source side precharge and boosting improvement for reverse order program
|
US10998041B1
(en)
|
2020-05-07 |
2021-05-04 |
Western Digital Technologies, Inc. |
Calibrating non-volatile memory read thresholds
|
US11526279B2
(en)
*
|
2020-05-12 |
2022-12-13 |
Intel Corporation |
Technologies for performing column architecture-aware scrambling
|
KR20210156985A
(en)
|
2020-06-19 |
2021-12-28 |
삼성전자주식회사 |
Semiconductor devices including work function layers
|
KR20210158615A
(en)
|
2020-06-24 |
2021-12-31 |
삼성전자주식회사 |
Integrate circuit device including gate line
|
KR20210158607A
(en)
|
2020-06-24 |
2021-12-31 |
삼성전자주식회사 |
Semiconductor device including capping layer
|
US11527300B2
(en)
|
2020-08-26 |
2022-12-13 |
Western Digital Technologies, Inc. |
Level dependent error correction code protection in multi-level non-volatile memory
|
US11436083B2
(en)
|
2020-09-04 |
2022-09-06 |
Western Digital Technologies, Inc. |
Data address management in non-volatile memory
|
KR20220068535A
(en)
*
|
2020-11-19 |
2022-05-26 |
에스케이하이닉스 주식회사 |
Memory system and operating method of memory system
|
US11557358B2
(en)
|
2021-04-15 |
2023-01-17 |
Sandisk Technologies Llc |
Memory apparatus and method of operation using adaptive erase time compensation for segmented erase
|
US11556416B2
(en)
|
2021-05-05 |
2023-01-17 |
Apple Inc. |
Controlling memory readout reliability and throughput by adjusting distance between read thresholds
|
US11847342B2
(en)
|
2021-07-28 |
2023-12-19 |
Apple Inc. |
Efficient transfer of hard data and confidence levels in reading a nonvolatile memory
|
WO2023200468A1
(en)
*
|
2022-04-13 |
2023-10-19 |
Silicon Storage Technology, Inc. |
Method of screening non-volatile memory cells
|