WO1998057423A1 - Method and system for locally annealing a microstructure formed on a substrate and device formed thereby - Google Patents

Method and system for locally annealing a microstructure formed on a substrate and device formed thereby Download PDF

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Publication number
WO1998057423A1
WO1998057423A1 PCT/US1998/011028 US9811028W WO9857423A1 WO 1998057423 A1 WO1998057423 A1 WO 1998057423A1 US 9811028 W US9811028 W US 9811028W WO 9857423 A1 WO9857423 A1 WO 9857423A1
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Prior art keywords
microstructure
substrate
resonator
micromechanical
predetermined
Prior art date
Application number
PCT/US1998/011028
Other languages
French (fr)
Inventor
Clark T.-C. Nguyen
Kun Wang
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The Regents Of The University Of Michigan
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Filing date
Publication date
Application filed by The Regents Of The University Of Michigan filed Critical The Regents Of The University Of Michigan
Priority to AT98923858T priority Critical patent/ATE238630T1/en
Priority to AU76050/98A priority patent/AU7605098A/en
Priority to EP98923858A priority patent/EP0988695B1/en
Priority to DE69813805T priority patent/DE69813805T2/en
Priority to JP50262099A priority patent/JP2002505046A/en
Publication of WO1998057423A1 publication Critical patent/WO1998057423A1/en
Priority to NO996113A priority patent/NO996113L/en

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02244—Details of microelectro-mechanical resonators
    • H03H9/02393—Post-fabrication trimming of parameters, e.g. resonance frequency, Q factor
    • H03H9/02401—Post-fabrication trimming of parameters, e.g. resonance frequency, Q factor by annealing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Definitions

  • This invention relates to methods and systems for annealing a microstructure formed on a substrate and, in particular, to methods and systems for locally annealing a microstructure formed on a substrate and devices formed thereby.
  • trimming often does not comprise an overwhelming percentage of the total device cost.
  • trimming or programming can constitute a dominant percentage of device cost if it must be done serially.
  • laser trimming of micromechanical resonators to achieve a specific reso- nance frequency usually must be done serially, and thus, has low throughput and high cost.
  • RTA rapid thermal annealing
  • An object of the present invention is to provide a device and a method and system for locally annealing a microstructure such as a micromechanical device in situ on a substrate of the resulting device without affecting any other microstructure formed on the substrate .
  • Another object of the present invention is to provide a method and system for locally annealing a microstructure such as a micromechanical device in situ on a substrate which are especially useful in a batch- mode processing of such devices.
  • Yet another object of the present invention is to provide a method and system for locally annealing a micromechanical device such as a micromechanical resonator while the resonator is operating on a substrate to achieve a specific resonance frequency and Q factor enhancement at a relatively high throughput and low cost due largely to smaller thermal time constants for the microscale structure .
  • Yet still another object of the present invention is to provide an electronically-based method and system for locally annealing a micromechanical device such as a resonator in situ on a substrate to allow fabrication at relatively low temperatures which may, in turn, enable merged circuit and microstructure technologies and also allow a wide frequency trimming range without large DC voltages.
  • a micromechanical device such as a resonator in situ on a substrate
  • polysilicon structural material may be deposited amorphous at a low temperature then locally annealed into poly- crystalline material which has better material charac- teristics.
  • a method for locally annealing a predetermined microstructure formed on a substrate.
  • the method includes the step of controllably raising the energy state of the predetermined microstructure over a period of time sufficient to change material and/or microstructural properties of the predetermined microstructure without substantially affecting any other microstructure formed on the sub- strate.
  • the predetermined microstructure is preferably a micromechanical device such as a micromechanical resonator having a resonance frequency and a Q factor.
  • the step of controllably raising is preferably accom- plished by controllably heating the resonator sufficient to cause not only the resonance frequency but also the Q factor of the resonator to change.
  • the method further includes the steps of causing the resonator to oscillate and monitor- ing the resonance frequency.
  • the step of controllably heating heats the resonator until the resonator has a desired resonance frequency.
  • the micromechanical resonator includes a beam.
  • the micromechanical resonator is a folded-beam micromechanical resonator. In both embodiments, the micromechanical resonator is typically a polysilicon resonator.
  • the microstructure typically has a resistance and wherein the step of controllably heating includes the step of causing an electrical current to flow through the predetermined microstructure to heat the predetermined microstructure.
  • the method further includes the steps of forming a pair of electrodes on the substrate electrically coupled to the predetermined micro- struccure and applying an electrical signal at the electrodes.
  • the electrical signal may be a DC signal, but is preferably a time-varying signal such as a signal having one or more pulses.
  • the substrate is a semiconductor substrate, but it also may be glass or other substrates.
  • the semiconductor substrate may be a silicon semiconductor substrate.
  • the predetermined microstructure may be a semiconductor microstructure such as a silicon semiconductor microstructure.
  • the prede- termined microstructure initially has an amorphous silicon microstructure and wherein the step of controllably heating changes the amorphous silicon microstructure to a polycrystalline or crystalline silicon microstructure .
  • the microstructure may form part of a micro- electromechanical device.
  • a system for locally annealing a predetermined micro- structure formed on a substrate of a device.
  • the system includes an annealing power supply and means adapted to be coupled to a microscopic part of the device for transferring power from the annealing power supply to the microscopic part of the device in the form of an electrical signal so that microscopic part of the device converts the transferred power to a controlled amount of heat over a period of time sufficient to change material and/or microstructural properties of the predetermined microstructure without significantly affecting any other microstructure formed on the substrate.
  • a device is provided having at least one microstructure formed on a substrate.
  • the device has electrodes formed on the substrate and electrically coupled to a predetermined microstructure to receive an electrical signal.
  • the electrical signal causes an electrical current to flow through the predetermined microstructure to controllably and directly heat the predetermined micro- structure over a period of time sufficient to change material and/or microstructural properties of the predetermined microstructure without affecting any other microstructure formed on the substrate.
  • a device having at least one microstructure formed on a substrate.
  • the device includes a resistive heating element formed on the substrate immediately adjacent a predetermined microstructure and adapted to receive a signal.
  • the signal causes the element to indirectly heat the predetermined microstructure over a period of time sufficient to change material and/or microstructural properties of the predetermined microstructure without affecting any other microstructure on the substrate.
  • the device further includes a microplatform thermally isolated from the substrate and wherein the resistive heating element and the microstructure are formed on the microplatform.
  • the method of the invention is a batch-mode trimming technique for micromechanical devices such as resonators by which the quality factor of such micromechanical resonators can be increased or decreased for electronic filtering, oscillator, and gyroscopic applications .
  • the method and system achieve both controllable frequency trimming and quality factor enhancement in micro-scale mechanical devices.
  • the method and system are electrically-activated and can be implemented on a massive scale, in a similar fashion to programming an EEPROM.
  • the method and system both allow for post- fabrication frequency trimming of microresonator devices, and through its Q-enhancement capability, enable low temperature fabrication of high-Q micro-scale resonators, which may in turn enable merged circuit+micro- structures processes where structures are fabricated after MEMS.
  • FIGURE 1 is a schematic diagram of a relatively simple micromechanical resonator and a circuit for applying a voltage across anchors of the resonator to directly heat the resonator in accordance with a first embodiment of the present invention
  • FIGURE 2 is a graph which illustrates how a frequency characteristic of a device formed through the method and system of the present invention changes by having a different frequency and a higher Q;
  • FIGURE 3 is a schematic diagram of another embodiment of the method and system of the present invention wherein the micromechanical resonator is indirectly heated by a circuit;
  • FIGURE 4 is a schematic diagram of the embodiment of Figure 3 with the addition of an isolating microplatforra;
  • FIGURE 5 is a perspective schematic diagram illustrating the method and system of the first embodiment of the present invention with respect to a comb- driven, folded-beam micromechanical resonator wherein the frequency trimming is done in situ while the resona- tor is being operated;
  • FIGURE 6 is a side schematic diagram of a microelectromechanical system wherein the invention is employed in situ without affecting on-chip circuits.
  • Figure 1 presents one possible embodiment of the localized annealing method and system of the present invention.
  • a voltage V armeal is applied between anchors 10 of a conductive micromechanical device or structure (in this case, a micromechanical resonator) , generally indicated at 12 in Figures 1, 3 and 4, which has a resistance R strucc between its terminals.
  • a current I anneal which flows through a beam 14 of the structure 12 and dissipates a power given by:
  • the structure 12 can be heated to a temperature where annealing occurs, upon which its frequency and quality factor (i.e. Q factor) will change as material and microstructural properties, such as defect density, change. Due to the microscopic size of the structure 12, very little power (e.g., 20 mW) is required to reach temperatures in excess of 1000 Kelvin.
  • Q factor quality factor
  • a drive electrode 16 causes the beam 14 to oscillate upon the application of an electrical signal thereto.
  • a sense electrode 18 senses the oscillations of the beam 14.
  • FIG. 2 there is illustrated the result of localized annealing in accordance with the present invention.
  • an initial resonator at frequency f ⁇ b is locally annealed, resulting in a new frequency characteristic, with new resonance frequency f oa and a much higher quality factor (i.e., a sharper peak) .
  • the resonance frequency of the micromechanical resonator 12 changes upon annealing.
  • One possible mechanism for this resonance frequency change is because internal stresses are modified, and resonance frequency is generally a function of stress.
  • the quality factor of the micromechanical resonator 12 is a function of defects within the structure, at both molecular and microstructural levels. The larger the concentration of defects, the lower the quality factor. Thus, since annealing of a structure removes these defects, it is also possible that annealing raises the quality factor.
  • FIGs 3 and 4 Other embodiments of the method and system for localized annealing are presented in Figures 3 and 4 with the same micromechanical resonator 12.
  • heating is achieved using a resistive heating device such as a resistor 20 located immediately adjacent or near the structure (i.e. resonator 12) to be annealed.
  • the resistor 20 and structure 12 are situated directly on a substrate 22.
  • the resistor 20 and the structure 12 are situated on a microplatform 24, which is thermally isolated from the substrate (not shown in Figure 4) via long, thin struts 26.
  • the embodiment in Figure 4 can achieve annealing with much lower power, since it has better thermal insulation.
  • the voltage applied for heating of the structure 12 using any of the embodiments need not be a DC voltage, as shown. It can be pulsed (as illustrated in Figure 5) or an AC signal for more controlled annealing, or for location-dependent annealing. For example, at very high frequencies, the current flows mainly over the surface of the structure 10 (due to the skin effect) , and thus, high frequency voltages can be used to anneal only the structure's surface. Current crowding effects combined with thermal loss topologies can also be harnessed for location specific localized annealing.
  • Figure 5 presents a schematic depicting details of this filament -like annealing procedure as applied to a properly biased and excited comb-driven, folded-beam ⁇ mechanical resonator 30 with sense elec- tronics including a sense electrode 32 and an amplifier 34.
  • the resonator 30 also includes a comb transducer 36 formed on a sliced ground plane 40 and a drive electrode 38.
  • the resonator design is similar to prior art designs in all respects, except for the provision of distinct leads or annealing electrodes 42 coupled to anchors 44 and 46.
  • the pulse voltage generator V anneal is inactive and provides the ground voltage for all components in this resonator system.
  • the anchor leads 42 are tied to a DC-bias voltage V , and an AC drive signal is applied to the one or more of the transducer electrodes 38 to induce vibration.
  • an output current is generated via a DC-biased, time- varying capacitor at the output electrode 32. This current is then sensed and amplified to a voltage, V o l by the amplifier 34.
  • Figure 5 shows an open loop implementation but it is understood that a closed loop oscillator hookup can also be annealed in situ.
  • V anneal is activated.
  • V anneal is made to emit one or more voltage pulses of magnitude V anneal for each annealing cycle.
  • the potentials of the input and output electrodes 46, the ground plane 40, and one of the resonator anchors 44 are raised by V anneal , while the potential at the remaining resonator anchor 44 remains constant at V p .
  • each pulse effectively applies a voltage across the resonator 30, from anchor- to-anchor, of magnitude V anneal l which then sources a current I anneal from anchor-to-anchor. This current flows through the resonator structure, dissipating a power given by:
  • a controller 48 monitors the voltage V 0 and is able to determine the resulting resonant frequency of the annealed microresonator 30. If the resulting resonant frequency is not the desired resonant frequen- cy, the controller 48 sends a control signal to the pulse voltage generator to supply another pulse to further heat the microresonator 30.
  • the microelectrical device 52 may include a capacitor 54 and layers of PMOS and NMOS The annealing of the device 50 is possible without affecting the on-chip circuits in the merged microcir- cuit plus microstructure technology represented in Figure 6.
  • the main advantage behind the localized annealing method and system of the present invention is its simplicity.
  • the mere application of a voltage across anchor points is very easy to implement, and this simplicity makes the technique applicable to massive arrays of resonators fabricated using batch processes.
  • this localized annealing technique allows the electronic tuning/trimming of micromechanical resonators, perhaps thousands of them on each die of a wafer. Trimming should be possible at the wafer level in batch-mode using localized annealing, and this can substantially lower the cost of micromechanical devices, perhaps making some of them economically feasible for the first time.
  • CMOS complementary metal-oxide-semiconductor
  • microstruc- tures The main problem in this process was in depositing microstructural layers above CMOS, since the deposition temperature required to achieve stress-free poly- silicon structures (600 °C) is greater than the eutectic temperature of aluminum contacts (540 °C) .
  • Localized annealing can solve this problem by allowing deposition of silicon at lower temperatures (at which it is deposited amorphous) , then localized annealing of individual structures (in a batch process) to crystallize the silicon, making it conductive and annealing away the stress.

Abstract

A batch-compatible, post-fabrication annealing method and system are described that can be used to trim the resonance frequency and enhance the quality factor of mechanical microstructures, particularly micromechanical structures, such as micromechanical resonators. The technique involves running a current through a micromechanical structure, or through a nearby microstructure (e.g., a nearby resistor), thereby dissipating power and heating the structure to temperatures high enough to change its microstructure and/or its material properties, which then lead to changes in the microstructure's resonance frequency and quality factor. For micromechanical structures, this technique is particularly useful, since it allows for convenient, simultaneous trimming of many microstructures all at once, and can be implemented via the simple application of a voltage across the anchor points of a micromechanical structure.

Description

METHOD AND SYSTEM FOR LOCALLY ANNEALING
A MICROSTRUCTURE FORMED ON A SUBSTRATE
AND DEVICE FORMED THEREBY
Government Rights
This invention was made with government support under Contract No. ECS-9530190 awarded by the National Science Foundation. The government has certain rights in the invention.
Technical Field
This invention relates to methods and systems for annealing a microstructure formed on a substrate and, in particular, to methods and systems for locally annealing a microstructure formed on a substrate and devices formed thereby.
Background Art
Many devices require post -fabrication trimming in order to operate within specifications. In particular, sensors and references (e.g., frequency references) require such trimming. For the case of macroscopic devices that are manufactured serially, trimming often does not comprise an overwhelming percentage of the total device cost. For the case of microscopic devices fabricated in batches (e.g., integrated circuits or micromechanical devices) , trimming or programming can constitute a dominant percentage of device cost if it must be done serially. For example, laser trimming of micromechanical resonators to achieve a specific reso- nance frequency usually must be done serially, and thus, has low throughput and high cost.
With the advent of frequency specific applications for micromechanical resonators, such as oscillator references and highly selective bandpass filters, techniques for post -fabrication trimming of resonance frequencies are becoming increasingly important. This is especially true for recent communications applications of micromechanical resonators, in which large numbers of such resonators with precisely located center frequencies must realize parallel filter banks and multiple oscillator references. Since these applications will likely be batch-fabricated using planar technologies, high throughput trimming is desirable.
It is known that rapid thermal annealing (RTA) can change stress profiles in polysilicon thin films.
Summary Of The Invention
An object of the present invention is to provide a device and a method and system for locally annealing a microstructure such as a micromechanical device in situ on a substrate of the resulting device without affecting any other microstructure formed on the substrate .
Another object of the present invention is to provide a method and system for locally annealing a microstructure such as a micromechanical device in situ on a substrate which are especially useful in a batch- mode processing of such devices. Yet another object of the present invention is to provide a method and system for locally annealing a micromechanical device such as a micromechanical resonator while the resonator is operating on a substrate to achieve a specific resonance frequency and Q factor enhancement at a relatively high throughput and low cost due largely to smaller thermal time constants for the microscale structure .
Yet still another object of the present invention is to provide an electronically-based method and system for locally annealing a micromechanical device such as a resonator in situ on a substrate to allow fabrication at relatively low temperatures which may, in turn, enable merged circuit and microstructure technologies and also allow a wide frequency trimming range without large DC voltages. For example, polysilicon structural material may be deposited amorphous at a low temperature then locally annealed into poly- crystalline material which has better material charac- teristics.
In carrying out the above objects and other objects of the present invention, a method is provided for locally annealing a predetermined microstructure formed on a substrate. The method includes the step of controllably raising the energy state of the predetermined microstructure over a period of time sufficient to change material and/or microstructural properties of the predetermined microstructure without substantially affecting any other microstructure formed on the sub- strate. The predetermined microstructure is preferably a micromechanical device such as a micromechanical resonator having a resonance frequency and a Q factor. The step of controllably raising is preferably accom- plished by controllably heating the resonator sufficient to cause not only the resonance frequency but also the Q factor of the resonator to change.
Preferably, the method further includes the steps of causing the resonator to oscillate and monitor- ing the resonance frequency. The step of controllably heating heats the resonator until the resonator has a desired resonance frequency.
In one embodiment, the micromechanical resonator includes a beam.
In another embodiment, the micromechanical resonator is a folded-beam micromechanical resonator. In both embodiments, the micromechanical resonator is typically a polysilicon resonator.
The microstructure typically has a resistance and wherein the step of controllably heating includes the step of causing an electrical current to flow through the predetermined microstructure to heat the predetermined microstructure.
Also, preferably, the method further includes the steps of forming a pair of electrodes on the substrate electrically coupled to the predetermined micro- struccure and applying an electrical signal at the electrodes. The electrical signal may be a DC signal, but is preferably a time-varying signal such as a signal having one or more pulses.
Preferably, the substrate is a semiconductor substrate, but it also may be glass or other substrates. The semiconductor substrate may be a silicon semiconductor substrate.
The predetermined microstructure may be a semiconductor microstructure such as a silicon semiconductor microstructure. In one embodiment, the prede- termined microstructure initially has an amorphous silicon microstructure and wherein the step of controllably heating changes the amorphous silicon microstructure to a polycrystalline or crystalline silicon microstructure .
The microstructure may form part of a micro- electromechanical device.
Further in carrying out the above objects and other objects of the present invention, a system is provided for locally annealing a predetermined micro- structure formed on a substrate of a device. The system includes an annealing power supply and means adapted to be coupled to a microscopic part of the device for transferring power from the annealing power supply to the microscopic part of the device in the form of an electrical signal so that microscopic part of the device converts the transferred power to a controlled amount of heat over a period of time sufficient to change material and/or microstructural properties of the predetermined microstructure without significantly affecting any other microstructure formed on the substrate. Still further in carrying out the above objects and other objects of the present invention, a device is provided having at least one microstructure formed on a substrate. The device has electrodes formed on the substrate and electrically coupled to a predetermined microstructure to receive an electrical signal. The electrical signal causes an electrical current to flow through the predetermined microstructure to controllably and directly heat the predetermined micro- structure over a period of time sufficient to change material and/or microstructural properties of the predetermined microstructure without affecting any other microstructure formed on the substrate.
Yet still further in carrying out the above objects and other objects of the present invention, a device is provided having at least one microstructure formed on a substrate. The device includes a resistive heating element formed on the substrate immediately adjacent a predetermined microstructure and adapted to receive a signal. The signal causes the element to indirectly heat the predetermined microstructure over a period of time sufficient to change material and/or microstructural properties of the predetermined microstructure without affecting any other microstructure on the substrate.
Preferably, the device further includes a microplatform thermally isolated from the substrate and wherein the resistive heating element and the microstructure are formed on the microplatform.
The method of the invention is a batch-mode trimming technique for micromechanical devices such as resonators by which the quality factor of such micromechanical resonators can be increased or decreased for electronic filtering, oscillator, and gyroscopic applications .
The method and system achieve both controllable frequency trimming and quality factor enhancement in micro-scale mechanical devices. The method and system are electrically-activated and can be implemented on a massive scale, in a similar fashion to programming an EEPROM. The method and system both allow for post- fabrication frequency trimming of microresonator devices, and through its Q-enhancement capability, enable low temperature fabrication of high-Q micro-scale resonators, which may in turn enable merged circuit+micro- structures processes where structures are fabricated after MEMS.
The above objects and other objects, features, and advantages of the present invention are readily apparent from the following detailed description of the best mode for carrying out the invention when taken in connection with the accompanying drawings.
Brief Description Of The Drawings
FIGURE 1 is a schematic diagram of a relatively simple micromechanical resonator and a circuit for applying a voltage across anchors of the resonator to directly heat the resonator in accordance with a first embodiment of the present invention;
FIGURE 2 is a graph which illustrates how a frequency characteristic of a device formed through the method and system of the present invention changes by having a different frequency and a higher Q;
FIGURE 3 is a schematic diagram of another embodiment of the method and system of the present invention wherein the micromechanical resonator is indirectly heated by a circuit;
FIGURE 4 is a schematic diagram of the embodiment of Figure 3 with the addition of an isolating microplatforra;
FIGURE 5 is a perspective schematic diagram illustrating the method and system of the first embodiment of the present invention with respect to a comb- driven, folded-beam micromechanical resonator wherein the frequency trimming is done in situ while the resona- tor is being operated; and
FIGURE 6 is a side schematic diagram of a microelectromechanical system wherein the invention is employed in situ without affecting on-chip circuits.
Best Mode For Carrying Out The Invention
Referring now to the drawing figures, there is illustrated in Figure 1 one embodiment of the method and system of the present invention. In particular, Figure 1 presents one possible embodiment of the localized annealing method and system of the present invention. Here, a voltage Varmeal is applied between anchors 10 of a conductive micromechanical device or structure (in this case, a micromechanical resonator) , generally indicated at 12 in Figures 1, 3 and 4, which has a resistance Rstrucc between its terminals. Application of this voltage sources a current Ianneal which flows through a beam 14 of the structure 12 and dissipates a power given by:
Figure imgf000011_0001
struct '
With sufficient voltage, Vaιmeal , the structure 12 can be heated to a temperature where annealing occurs, upon which its frequency and quality factor (i.e. Q factor) will change as material and microstructural properties, such as defect density, change. Due to the microscopic size of the structure 12, very little power (e.g., 20 mW) is required to reach temperatures in excess of 1000 Kelvin.
A drive electrode 16 causes the beam 14 to oscillate upon the application of an electrical signal thereto. A sense electrode 18 senses the oscillations of the beam 14.
Referring now to Figure 2, there is illustrated the result of localized annealing in accordance with the present invention. Here, an initial resonator at frequency fσb is locally annealed, resulting in a new frequency characteristic, with new resonance frequency foa and a much higher quality factor (i.e., a sharper peak) .
The resonance frequency of the micromechanical resonator 12 changes upon annealing. One possible mechanism for this resonance frequency change is because internal stresses are modified, and resonance frequency is generally a function of stress. The quality factor of the micromechanical resonator 12 is a function of defects within the structure, at both molecular and microstructural levels. The larger the concentration of defects, the lower the quality factor. Thus, since annealing of a structure removes these defects, it is also possible that annealing raises the quality factor.
Other embodiments of the method and system for localized annealing are presented in Figures 3 and 4 with the same micromechanical resonator 12. Here, heating is achieved using a resistive heating device such as a resistor 20 located immediately adjacent or near the structure (i.e. resonator 12) to be annealed. In Figure 3, the resistor 20 and structure 12 are situated directly on a substrate 22.
In Figure 4, the resistor 20 and the structure 12 are situated on a microplatform 24, which is thermally isolated from the substrate (not shown in Figure 4) via long, thin struts 26. The embodiment in Figure 4 can achieve annealing with much lower power, since it has better thermal insulation.
The voltage applied for heating of the structure 12 using any of the embodiments need not be a DC voltage, as shown. It can be pulsed (as illustrated in Figure 5) or an AC signal for more controlled annealing, or for location-dependent annealing. For example, at very high frequencies, the current flows mainly over the surface of the structure 10 (due to the skin effect) , and thus, high frequency voltages can be used to anneal only the structure's surface. Current crowding effects combined with thermal loss topologies can also be harnessed for location specific localized annealing. Figure 5 presents a schematic depicting details of this filament -like annealing procedure as applied to a properly biased and excited comb-driven, folded-beam μmechanical resonator 30 with sense elec- tronics including a sense electrode 32 and an amplifier 34. The resonator 30 also includes a comb transducer 36 formed on a sliced ground plane 40 and a drive electrode 38. The resonator design is similar to prior art designs in all respects, except for the provision of distinct leads or annealing electrodes 42 coupled to anchors 44 and 46.
During normal resonator operation, the pulse voltage generator Vanneal is inactive and provides the ground voltage for all components in this resonator system. In this configuration, the anchor leads 42 are tied to a DC-bias voltage V , and an AC drive signal is applied to the one or more of the transducer electrodes 38 to induce vibration. Once vibration is established, an output current is generated via a DC-biased, time- varying capacitor at the output electrode 32. This current is then sensed and amplified to a voltage, Vo l by the amplifier 34. Figure 5 shows an open loop implementation but it is understood that a closed loop oscillator hookup can also be annealed in situ.
To anneal the μresonator 30 during induced vibration, the pulse voltage generator Vanneal is activated. Depending on the requirements, Vanneal is made to emit one or more voltage pulses of magnitude Vanneal for each annealing cycle. During each pulse, the potentials of the input and output electrodes 46, the ground plane 40, and one of the resonator anchors 44 are raised by Vanneal , while the potential at the remaining resonator anchor 44 remains constant at Vp . Thus, each pulse effectively applies a voltage across the resonator 30, from anchor- to-anchor, of magnitude Vanneal l which then sources a current Ianneal from anchor-to-anchor. This current flows through the resonator structure, dissipating a power given by:
Figure imgf000014_0001
= -X"■ anneal1P- struct ' where -Rstruct is the resistance between the anchors 44 and 46 of the resonator 30. Heat is thus generated throughout the resonator structure, raising its overall temper- ature and effectively annealing it.
A controller 48 monitors the voltage V0 and is able to determine the resulting resonant frequency of the annealed microresonator 30. If the resulting resonant frequency is not the desired resonant frequen- cy, the controller 48 sends a control signal to the pulse voltage generator to supply another pulse to further heat the microresonator 30.
Referring now to Figure 6, there is illustrated a MEMS having both a micromechanical device 50 and microelectrical devices 52. The microelectrical device 52 may include a capacitor 54 and layers of PMOS and NMOS The annealing of the device 50 is possible without affecting the on-chip circuits in the merged microcir- cuit plus microstructure technology represented in Figure 6.
The main advantage behind the localized annealing method and system of the present invention is its simplicity. The mere application of a voltage across anchor points is very easy to implement, and this simplicity makes the technique applicable to massive arrays of resonators fabricated using batch processes. Just as EEPROM's with millions of transistors are electronically programmable, this localized annealing technique allows the electronic tuning/trimming of micromechanical resonators, perhaps thousands of them on each die of a wafer. Trimming should be possible at the wafer level in batch-mode using localized annealing, and this can substantially lower the cost of micromechanical devices, perhaps making some of them economically feasible for the first time.
Furthermore, these localized annealing procedures invite several novel circuits+micromechanical device technologies. For example, the recent MICS technology attempted to modularly merge CMOS and micro- mechanics by first implementing CMOS, then microstruc- tures . The main problem in this process was in depositing microstructural layers above CMOS, since the deposition temperature required to achieve stress-free poly- silicon structures (600 °C) is greater than the eutectic temperature of aluminum contacts (540 °C) . Localized annealing can solve this problem by allowing deposition of silicon at lower temperatures (at which it is deposited amorphous) , then localized annealing of individual structures (in a batch process) to crystallize the silicon, making it conductive and annealing away the stress. This results in a foundry-compatible merged technology process that can enable sensor and micro- actuator products. While the best mode for carrying out the invention has been described in detail, those familiar with the art to which this invention relates will recognize various alternative designs and embodiments for practicing the invention as defined by the following claims .

Claims

What Is Claimed Is:
1. A method for locally annealing a predetermined microstructure formed on a substrate, the method comprising the step of: controllably raising the energy state of the predetermined microstructure over a period of time sufficient to change material and/or microstructural properties of the predetermined microstructure without substantially affecting any other microstructure formed on the substrate.
2. The method of claim 1 wherein the step of controllably raising includes the step of controllably heating.
3. The method as claimed in claim 2 wherein the predetermined microstructure is a micromechanical device .
4. The method as claimed in claim 3 wherein the micromechanical device is a micromechanical resonator having a resonance frequency and a Q factor.
5. The method as claimed in claim 4 wherein the step of controllably heating is sufficient to cause the resonance frequency of the resonator to change.
6. The method as claimed in claim 5 further comprising the steps of causing the resonator to oscil- late and monitoring the resonance frequency wherein the step of controllably heating heats the resonator until the resonator has a desired resonance frequency.
7. The method as claimed in claim 4 wherein the step of controllably heating is sufficient to cause the Q factor to change.
8. The method as claimed in claim 4 wherein the step of controllably heating is sufficient to cause the resonance frequency and the Q factor to change .
9. The method as claimed in claim 4 wherein the micromechanical resonator includes a beam having a pair of anchors .
10. The method as claimed in claim 4 wherein the micromechanical resonator is a folded-beam micromechanical resonator having anchors .
11. The method as claimed in claim 1 wherein the micromechanical resonator is a polysilicon resona- tor.
12. The method as claimed in claim 2 wherein the microstructure has a resistance and wherein the step of controllably heating includes the step of causing an electrical current to flow through the predetermined microstructure to heat the predetermined microstructure.
13. The method as claimed in claim 12 further comprising the step of forming a pair of electrodes on the substrate electrically coupled to the predetermined microstructure and applying an electrical signal at the electrodes.
14. The method as claimed in claim 13 wherein the electrical signal is a time-varying signal.
15. The method as claimed in claim 14 wherein the time-varying signal is a signal having at least one pulse .
16. The method as claimed in claim 1 wherein the substrate is a semiconductor substrate.
17. The method as claimed in claim 15 wherein the semiconductor substrate is a silicon semiconductor substrate .
18. The method as claimed in claim 2 wherein the predetermined microstructure is a semiconductor microstructure .
19. The method as claimed in claim 18 wherein the semiconductor microstructure is a silicon semiconductor microstructure .
20. The method as claimed in claim 19 wherein the predetermined microstructure has an amorphous silicon microstructure and wherein the step of controllably heating changes the amorphous silicon microstructure to a polycrystalline silicon microstructure.
21. The method as claimed in claim 1 wherein the microstructure forms part of a microelectromechanical device.
22. A system for locally annealing a predetermined microstructure formed on a substrate of a device, the system comprising: an annealing power supply; and means adapted to be coupled to a microscopic part of the device for transferring power from the annealing power supply to the microscopic part in the form of an electrical signal so that microscopic part of the device converts the transferred power to a controlled amount of heat over a period of time sufficient to change material and/or microstructural properties of the predetermined microstructure without significantly affecting any other microstructure formed on the sub- strate.
23. The system as claimed in claim 22 wherein the predetermined microstructure is a micromechanical device .
24. The system as claimed in claim 23 wherein the micromechanical device is a micromechanical resonator having a resonance frequency and a Q factor.
25. The system as claimed in claim 24 wherein the heat is sufficient to cause the resonance frequency of the resonator to change.
26. The system as claimed in claim 25 further comprising an electrical power supply adapted to be coupled to a driver of the resonator for supplying an electrical drive signal to the driver so that the resonator oscillates and a controller for monitoring the resulting resonance frequency wherein the controller controls the electrical signal from the annealing power supply until the resonator has a desired resonance frequency.
27. The system as claimed in claim 24 wherein the heat is sufficient to cause the Q factor to change.
28. The system as claimed in claim 24 wherein the heat is sufficient to cause the resonance frequency and the Q factor to change.
29. The system as claimed in claim 24 wherein the micromechanical resonator includes a beam having a pair of anchors .
30. The system as claimed in claim 24 wherein the micromechanical resonator is a folded-beam resonator.
31. The system as claimed in claim 22 wherein the micromechanical resonator is a polysilicon resonator.
32. The system as claimed in claim 22 wherein the microscopic part of the device is the predetermined microstructure .
33. The system as claimed in claim 22 wherein the electrical signal is a time-varying signal.
34. The system as claimed in claim 33 wherein the time-varying signal is a signal having at least one pulse .
35. The system as claimed in claim 32 wherein the device has a pair of electrodes coupled at spaced positions to the microstructure and wherein the electrical signal is applied at the electrodes.
36. The system as claimed in claim 22 wherein the substrate is a semiconductor substrate.
37. The system as claimed in claim 36 wherein the semiconductor substrate is a silicon semiconductor substrate.
38. The system as claimed in claim 22 wherein the predetermined microstructure is a semiconductor microstructure .
39. The system as claimed in claim 38 wherein the semiconductor microstructure is a silicon semiconductor microstructure.
40. The system as claimed in claim 39 wherein the predetermined microstructure has an amorphous silicon microstructure and wherein the heat is suffi- cient to change the amorphous silicon microstructure to a polycrystalline or crystalline silicon microstructure.
41. The system as claimed in claim 22 wherein the microstructure forms part of a microelectromechanical device.
42. A device having at least one microstructure formed on a substrate, the improvement comprising: electrodes formed on the substrate and electrically coupled to a predetermined microstructure to receive an electrical signal which, in turn, causes an electrical current to flow through the predetermined microstructure to controllably and directly heat the predetermined microstructure over a period of time sufficient to change material and/or microstructural properties of the predetermined microstructure without substantially affecting any other microstructure formed on the substrate.
43. The device as claimed in claim 42 wherein the microstructure is a micromechanical device having anchors and wherein the electrodes are electrically coupled to their respective anchors.
44. A device having at least one microstructure formed on a substrate, the improvement comprising: a microplatform formed on and thermally isolated from the substrate; at least one microstructure formed on the microplatform; and a resistive heating element formed on the microplatform and adapted to receive a signal which, in turn, causes the element to indirectly heat any microstructure formed on the microplatform including the at least one microstructure over a period of time sufficient to change material and/or microstructural proper- ties of the at least one microstructure without substantially affecting any other microstructure formed on the substrate but not on the microplatform.
45. The device as claimed in claim 44 wherein the at least one microstructure is a micromechanical device.
46. A device having at least one microstructure formed on a substrate, the improvement comprising: a resistive heating element formed on the substrate immediately adjacent a predetermined micro- structure and adapted to receive a signal which, in turn, causes the element to indirectly heat the predetermined microstructure over a period of time sufficient to change material and/or microstructural properties of the predetermined microstructure without substantially affecting any other microstructure on the substrate.
47. The device as claimed in claim 46 wherein the microstructure is a micromechanical device.
PCT/US1998/011028 1997-06-13 1998-05-29 Method and system for locally annealing a microstructure formed on a substrate and device formed thereby WO1998057423A1 (en)

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AT98923858T ATE238630T1 (en) 1997-06-13 1998-05-29 METHOD AND DEVICE FOR LOCAL ANNEALING A MICROSTRUCTURE MOLDED ON A SUBSTRATE AND DEVICE PRODUCED THEREFROM
AU76050/98A AU7605098A (en) 1997-06-13 1998-05-29 Method and system for locally annealing a microstructure formed on a substrate and device formed thereby
EP98923858A EP0988695B1 (en) 1997-06-13 1998-05-29 Method and system for locally annealing a microstructure formed on a substrate and device formed thereby
DE69813805T DE69813805T2 (en) 1997-06-13 1998-05-29 METHOD AND DEVICE FOR LOCAL GLOWING OF A MICROSTRUCTURE MOLDED ON A SUBSTRATE, AND DEVICE PRODUCED BY THIS
JP50262099A JP2002505046A (en) 1997-06-13 1998-05-29 Method and system for locally annealing microstructures formed on a substrate and devices formed thereby
NO996113A NO996113L (en) 1997-06-13 1999-12-10 Method and system for local glowing of a microstructure formed on a substrate, as well as device made therewith

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6570468B2 (en) * 2001-06-29 2003-05-27 Intel Corporation Resonator frequency correction by modifying support structures
JP2005533400A (en) * 2001-09-28 2005-11-04 インテル・コーポレーション Micro-bridge structure with reduced central mass for very high frequency MEM resonators
US7091801B2 (en) 2001-11-09 2006-08-15 Robert Bosch Gmbh Micromechanical resonator having a metal layer surrounding a cylinder formed in a base layer
US8542074B2 (en) 2010-05-26 2013-09-24 Panasonic Corporation MEMS resonator

Families Citing this family (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6593831B2 (en) 1999-01-14 2003-07-15 The Regents Of The University Of Michigan Method and apparatus for filtering signals in a subsystem including a power amplifier utilizing a bank of vibrating micromechanical apparatus
US6713938B2 (en) 1999-01-14 2004-03-30 The Regents Of The University Of Michigan Method and apparatus for filtering signals utilizing a vibrating micromechanical resonator
US6566786B2 (en) 1999-01-14 2003-05-20 The Regents Of The University Of Michigan Method and apparatus for selecting at least one desired channel utilizing a bank of vibrating micromechanical apparatus
US6577040B2 (en) 1999-01-14 2003-06-10 The Regents Of The University Of Michigan Method and apparatus for generating a signal having at least one desired output frequency utilizing a bank of vibrating micromechanical devices
US6424074B2 (en) 1999-01-14 2002-07-23 The Regents Of The University Of Michigan Method and apparatus for upconverting and filtering an information signal utilizing a vibrating micromechanical device
US6600252B2 (en) 1999-01-14 2003-07-29 The Regents Of The University Of Michigan Method and subsystem for processing signals utilizing a plurality of vibrating micromechanical devices
US6238946B1 (en) * 1999-08-17 2001-05-29 International Business Machines Corporation Process for fabricating single crystal resonant devices that are compatible with integrated circuit processing
US6346030B1 (en) * 2000-05-09 2002-02-12 Sandia Corporation Microdevice having interior cavity with high aspect ratio surface features and associated methods of manufacture and use
US6739190B2 (en) * 2000-08-24 2004-05-25 The Regents Of The University Of Michigan Micromechanical resonator device
DE10065723A1 (en) * 2000-12-29 2002-07-04 Bosch Gmbh Robert Arrangement for temperature measurement and control
US6568264B2 (en) * 2001-02-23 2003-05-27 Charles E. Heger Wireless swimming pool water level system
US6600389B2 (en) * 2001-05-30 2003-07-29 Intel Corporation Tapered structures for generating a set of resonators with systematic resonant frequencies
EP1876608A3 (en) * 2001-09-10 2008-04-16 Microbridge Technologies Inc. Method for effective trimming of resistors using pulsed heating
AU2002325723A1 (en) * 2001-09-10 2003-03-24 Microbridge Technologies Inc. Method for trimming resistors
US7004015B2 (en) * 2001-10-25 2006-02-28 The Regents Of The University Of Michigan Method and system for locally sealing a vacuum microcavity, methods and systems for monitoring and controlling pressure and method and system for trimming resonant frequency of a microstructure therein
US6605319B1 (en) * 2002-02-11 2003-08-12 Applied Materials, Inc. Use of integrated polygen deposition and RTP for microelectromechanical systems
US7029829B2 (en) * 2002-04-18 2006-04-18 The Regents Of The University Of Michigan Low temperature method for forming a microcavity on a substrate and article having same
US7025778B2 (en) * 2002-06-07 2006-04-11 Endovascular Technologies, Inc. Endovascular graft with pressure, temperature, flow and voltage sensors
US7261733B1 (en) * 2002-06-07 2007-08-28 Endovascular Technologies, Inc. Endovascular graft with sensors design and attachment methods
US7399313B2 (en) 2002-06-07 2008-07-15 Brown Peter S Endovascular graft with separable sensors
WO2004013893A2 (en) * 2002-08-01 2004-02-12 Georgia Tech Research Corporation Piezo electric on seminconductor on- insulator resonator
AU2003290513A1 (en) * 2002-08-07 2004-04-08 Georgia Tech Research Corporation Capacitive resonators and methods of fabrication
JP4189637B2 (en) * 2002-09-19 2008-12-03 日本電気株式会社 FILTER, COMPOSITE FILTER, FILTER MOUNTING BODY WITH THE SAME, INTEGRATED CIRCUIT CHIP, ELECTRONIC DEVICE, AND METHOD FOR CHANGE THE FREQUENCY CHARACTERISTICS OF THE SAME
US6930569B2 (en) * 2003-07-31 2005-08-16 Discera Micromechanical resonator having short support beams
US6870444B1 (en) * 2003-08-28 2005-03-22 Motorola, Inc. Electromechanical resonator and method of operating same
JP2007505543A (en) * 2003-09-10 2007-03-08 コニンクリユケ フィリップス エレクトロニクス エヌ．ブイ． Electromechanical transducer and electrical device
US6995622B2 (en) 2004-01-09 2006-02-07 Robert Bosh Gmbh Frequency and/or phase compensated microelectromechanical oscillator
US7068125B2 (en) * 2004-03-04 2006-06-27 Robert Bosch Gmbh Temperature controlled MEMS resonator and method for controlling resonator frequency
US7102467B2 (en) * 2004-04-28 2006-09-05 Robert Bosch Gmbh Method for adjusting the frequency of a MEMS resonator
US7256107B2 (en) * 2004-05-04 2007-08-14 The Regents Of The University Of California Damascene process for use in fabricating semiconductor structures having micro/nano gaps
JP4611127B2 (en) * 2004-06-14 2011-01-12 パナソニック株式会社 Electromechanical signal selection element
US7176770B2 (en) * 2004-08-24 2007-02-13 Georgia Tech Research Corp. Capacitive vertical silicon bulk acoustic resonator
US7918800B1 (en) * 2004-10-08 2011-04-05 Endovascular Technologies, Inc. Aneurysm sensing devices and delivery systems
KR100610016B1 (en) * 2004-11-18 2006-08-08 삼성전자주식회사 activation apparatus of impurity atom for semiconductor device manufacturing and activation method thereof
US7205867B2 (en) * 2005-05-19 2007-04-17 Robert Bosch Gmbh Microelectromechanical resonator structure, and method of designing, operating and using same
US7337671B2 (en) 2005-06-03 2008-03-04 Georgia Tech Research Corp. Capacitive microaccelerometers and fabrication methods
WO2007037150A1 (en) * 2005-09-27 2007-04-05 Matsushita Electric Industrial Co., Ltd. Resonator and filter using same
US7578189B1 (en) 2006-05-10 2009-08-25 Qualtre, Inc. Three-axis accelerometers
US7767484B2 (en) 2006-05-31 2010-08-03 Georgia Tech Research Corporation Method for sealing and backside releasing of microelectromechanical systems
US20080054759A1 (en) * 2006-08-11 2008-03-06 Farrokh Ayazi Wafer-level encapsulation and sealing of electrostatic transducers
JP4977431B2 (en) * 2006-10-12 2012-07-18 三洋電機株式会社 Micromechanical resonator
JP4965962B2 (en) * 2006-10-13 2012-07-04 学校法人立命館 Micromechanical resonator
JP4337870B2 (en) * 2006-12-15 2009-09-30 セイコーエプソン株式会社 MEMS resonator and method for manufacturing MEMS resonator
JP2009060173A (en) * 2007-08-29 2009-03-19 Seiko Instruments Inc Oscillation element and oscillator having the same
JP5039959B2 (en) * 2007-08-31 2012-10-03 セイコーインスツル株式会社 Oscillator
JP4995675B2 (en) * 2007-09-10 2012-08-08 セイコーインスツル株式会社 Oscillator device and oscillator
JP2009088854A (en) * 2007-09-28 2009-04-23 Sanyo Electric Co Ltd Micro mechanical resonator and its manufacturing method
WO2011026100A1 (en) 2009-08-31 2011-03-03 Georgia Tech Research Corporation Bulk acoustic wave gyroscope with spoked structure
US8686508B2 (en) * 2009-09-03 2014-04-01 International Business Machines Corporation Structures, methods and applications for electrical pulse anneal processes
TWI511916B (en) 2012-06-28 2015-12-11 Nat Univ Tsing Hua Micromechanical resonator oscillator structure and driving method
US9584092B2 (en) * 2015-04-14 2017-02-28 International Business Machines Corporation Mechanical resonator with a spring-mass system comprising a phase-change material
EP3311486B1 (en) * 2015-06-19 2020-12-02 SiTime Corporation Microelectromechanical resonator
US10148244B1 (en) * 2015-09-15 2018-12-04 National Technology & Engineering Solutions Of Sandia, Llc Trimming method for microresonators and microresonators made thereby

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5144184A (en) * 1990-01-26 1992-09-01 The Charles Stark Draper Laboratory, Inc. Micromechanical device with a trimmable resonant frequency structure and method of trimming same
US5188983A (en) * 1990-04-11 1993-02-23 Wisconsin Alumni Research Foundation Polysilicon resonating beam transducers and method of producing the same
US5451425A (en) * 1994-09-13 1995-09-19 The United States Of America As Represented By The Secretary Of The Army Process for setting the frequency of a silicon microresonator

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5451525A (en) * 1992-02-14 1995-09-19 Coulter Corporation Method and materials for determining particle count in a flow cytometer
US5645684A (en) * 1994-03-07 1997-07-08 The Regents Of The University Of California Multilayer high vertical aspect ratio thin film structures
DE4417132C2 (en) * 1994-05-17 1996-08-14 Ibm Resonant sensor and its use
US5530342A (en) * 1994-09-30 1996-06-25 Rockwell International Corporation Micromachined rate sensor comb drive device and method
US5696491A (en) * 1995-06-07 1997-12-09 Regents Of The University Of California Self-excited microelectromechanical device
US5696591A (en) 1996-01-05 1997-12-09 Eastman Kodak Company Apparatus and method for detecting longitudinally oriented flaws in a moving web
JP3604259B2 (en) 1997-06-12 2004-12-22 株式会社東芝 Refueling machine and its control device
US5870007A (en) * 1997-06-16 1999-02-09 Roxburgh Ltd. Multi-dimensional physical actuation of microstructures

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5144184A (en) * 1990-01-26 1992-09-01 The Charles Stark Draper Laboratory, Inc. Micromechanical device with a trimmable resonant frequency structure and method of trimming same
US5188983A (en) * 1990-04-11 1993-02-23 Wisconsin Alumni Research Foundation Polysilicon resonating beam transducers and method of producing the same
US5451425A (en) * 1994-09-13 1995-09-19 The United States Of America As Represented By The Secretary Of The Army Process for setting the frequency of a silicon microresonator

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
KUN WANG ET AL.: "Frequency Trimming and Q-Factor Enhancement of Micromechanical Resonators Via Localized Filament Annealing", INTERNATIONAL CONFERENCE ON SOLID-STATE SENSORS AND ACTUATORS. TRANSDUCERS 97. DIGEST OF TECHNICAL PAPERS, vol. 1, 16 June 1997 (1997-06-16) - 19 June 1997 (1997-06-19), Chicago, IL, US, pages 109 - 112, XP002077463 *
PEERLINGS J ET AL: "LONG RESONATOR MICROMACHINED TUNABLE GAAS-ALAS FABRY-PEROT FILTER", IEEE PHOTONICS TECHNOLOGY LETTERS, vol. 9, no. 9, September 1997 (1997-09-01), pages 1235 - 1237, XP000721226 *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6570468B2 (en) * 2001-06-29 2003-05-27 Intel Corporation Resonator frequency correction by modifying support structures
US6650204B2 (en) 2001-06-29 2003-11-18 Intel Corporation Resonator frequency correction by modifying support structures
JP2005533400A (en) * 2001-09-28 2005-11-04 インテル・コーポレーション Micro-bridge structure with reduced central mass for very high frequency MEM resonators
US7091801B2 (en) 2001-11-09 2006-08-15 Robert Bosch Gmbh Micromechanical resonator having a metal layer surrounding a cylinder formed in a base layer
US8542074B2 (en) 2010-05-26 2013-09-24 Panasonic Corporation MEMS resonator

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EP0988695B1 (en) 2003-04-23
ATE238630T1 (en) 2003-05-15
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NO996113L (en) 2000-02-07

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