WO1998020606A3 - Tunable dielectric flip chip varactors - Google Patents

Tunable dielectric flip chip varactors Download PDF

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Publication number
WO1998020606A3
WO1998020606A3 PCT/US1997/019334 US9719334W WO9820606A3 WO 1998020606 A3 WO1998020606 A3 WO 1998020606A3 US 9719334 W US9719334 W US 9719334W WO 9820606 A3 WO9820606 A3 WO 9820606A3
Authority
WO
WIPO (PCT)
Prior art keywords
varactors
flip chip
tunable dielectric
circuit
present
Prior art date
Application number
PCT/US1997/019334
Other languages
French (fr)
Other versions
WO1998020606A2 (en
Inventor
Gerhard A Koepf
John C Price
Andrey B Kozyrev
Carl H Mueller
Charles A Rogers
Alexander Prudan
Titiana Rivkina
David Galt
Original Assignee
Superconducting Core Technolog
Gerhard A Koepf
John C Price
Andrey B Kozyrev
Carl H Mueller
Charles A Rogers
Alexander Prudan
Titiana Rivkina
David Galt
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Superconducting Core Technolog, Gerhard A Koepf, John C Price, Andrey B Kozyrev, Carl H Mueller, Charles A Rogers, Alexander Prudan, Titiana Rivkina, David Galt filed Critical Superconducting Core Technolog
Priority to EP97946303A priority Critical patent/EP1002340A4/en
Priority to AU51502/98A priority patent/AU5150298A/en
Publication of WO1998020606A2 publication Critical patent/WO1998020606A2/en
Publication of WO1998020606A3 publication Critical patent/WO1998020606A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0805—Capacitors only
    • H01L27/0808—Varactor diodes

Abstract

The present invention is directed to a method for forming electrically tunable varactors independently of the circuit in which the varactors are to be incorporated. In the method, a tunable dielectric material (362) is deposited on a substrate, subjected to thermal treatment to reduce crystalline defects, metallized, and the layered structure subdivided into a number of varactors. The varactors are bonded using flip chip technique to a circuit. The present invention further provides varactors having differing configurations. One varactor configuration includes stacked conductor pairs (354/358, 366/370) separated by a nontunable insulating material (254) having a low electric permittivity.
PCT/US1997/019334 1996-10-25 1997-10-24 Tunable dielectric flip chip varactors WO1998020606A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP97946303A EP1002340A4 (en) 1996-10-25 1997-10-24 Tunable dielectric flip chip varactors
AU51502/98A AU5150298A (en) 1996-10-25 1997-10-24 Tunable dielectric flip chip varactors

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US2916296P 1996-10-25 1996-10-25
US60/029,162 1996-10-25

Publications (2)

Publication Number Publication Date
WO1998020606A2 WO1998020606A2 (en) 1998-05-14
WO1998020606A3 true WO1998020606A3 (en) 1998-06-25

Family

ID=21847580

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1997/019334 WO1998020606A2 (en) 1996-10-25 1997-10-24 Tunable dielectric flip chip varactors

Country Status (3)

Country Link
EP (1) EP1002340A4 (en)
AU (1) AU5150298A (en)
WO (1) WO1998020606A2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6525630B1 (en) 1999-11-04 2003-02-25 Paratek Microwave, Inc. Microstrip tunable filters tuned by dielectric varactors
AU2001257358A1 (en) 2000-05-02 2001-11-12 Paratek Microwave, Inc. Voltage tuned dielectric varactors with bottom electrodes
US6686817B2 (en) 2000-12-12 2004-02-03 Paratek Microwave, Inc. Electronic tunable filters with dielectric varactors
WO2002056417A2 (en) * 2001-01-11 2002-07-18 Motorola, Inc. Tunable structure utilizing a compliant substrate

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5173835A (en) * 1991-10-15 1992-12-22 Motorola, Inc. Voltage variable capacitor
US5283462A (en) * 1991-11-04 1994-02-01 Motorola, Inc. Integrated distributed inductive-capacitive network
US5640042A (en) * 1995-12-14 1997-06-17 The United States Of America As Represented By The Secretary Of The Army Thin film ferroelectric varactor

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2812405B2 (en) * 1991-03-15 1998-10-22 信越半導体株式会社 Semiconductor substrate manufacturing method
US5472935A (en) * 1992-12-01 1995-12-05 Yandrofski; Robert M. Tuneable microwave devices incorporating high temperature superconducting and ferroelectric films
US5538941A (en) * 1994-02-28 1996-07-23 University Of Maryland Superconductor/insulator metal oxide hetero structure for electric field tunable microwave device
WO1998000881A1 (en) * 1996-06-28 1998-01-08 Superconducting Core Technologies, Inc. Near resonant cavity tuning devices

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5173835A (en) * 1991-10-15 1992-12-22 Motorola, Inc. Voltage variable capacitor
US5283462A (en) * 1991-11-04 1994-02-01 Motorola, Inc. Integrated distributed inductive-capacitive network
US5640042A (en) * 1995-12-14 1997-06-17 The United States Of America As Represented By The Secretary Of The Army Thin film ferroelectric varactor

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP1002340A4 *

Also Published As

Publication number Publication date
EP1002340A2 (en) 2000-05-24
AU5150298A (en) 1998-05-29
WO1998020606A2 (en) 1998-05-14
EP1002340A4 (en) 2000-05-24

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