WO1998016994A1 - Inverter - Google Patents

Inverter Download PDF

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Publication number
WO1998016994A1
WO1998016994A1 PCT/DE1997/002334 DE9702334W WO9816994A1 WO 1998016994 A1 WO1998016994 A1 WO 1998016994A1 DE 9702334 W DE9702334 W DE 9702334W WO 9816994 A1 WO9816994 A1 WO 9816994A1
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WO
WIPO (PCT)
Prior art keywords
semiconductor
voltage
wave
semiconductor switch
microcontroller
Prior art date
Application number
PCT/DE1997/002334
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German (de)
French (fr)
Inventor
Dietrich Karschny
Original Assignee
Dietrich Karschny
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dietrich Karschny filed Critical Dietrich Karschny
Publication of WO1998016994A1 publication Critical patent/WO1998016994A1/en

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Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
    • H02M3/158—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load

Definitions

  • the invention relates to an inverter according to the preamble of claim 1, as it from the US Z .: C. M. Penalver, u. a. : Microprocessor Control of DC / AC Static Converters ", in: IEEE Transactions on Industrial Electronics, Vol. IE-32, No. 3, August 1985, pp. 186-191.
  • the conventional inverters have the following disadvantages: When using 50 Hz transformers, the devices are heavy and bulky. High losses occur when using HF transformers. A relatively high input voltage is required for circuits that do not use a transformer; the DC potential is not continuously at ground. When using thyristor inverters, the alternating current generated has relatively high distortion factors.
  • the invention has for its object to provide a light, low-loss inverter with a low distortion factor.
  • Fig. 1 shows the circuit diagram of such an inverter
  • FIG. 2 shows a switching pattern with which the semiconductor switches are switched depending on the profile of the AC voltage.
  • the circuit consists of a capacitor 34, which lies across the AC voltage inputs 12, 16.
  • a choke 8 is provided, one side of which is connected to the one DC voltage connection 12 via a first semiconductor 10 and the other side of which is connected to the other DC voltage input via a second semiconductor 14.
  • first series circuit which is formed from a first diode 18 and a third semiconductor 20
  • second series circuit which is made up a second diode 24 and a fourth semiconductor 26 is formed.
  • a fifth semiconductor 32 connects the center of the second series connection with one another. voltage input directly to the line connecting the other AC voltage output.
  • a - not shown - microcontroller switches the semiconductors 10, 14, 20, 26 and 32.
  • the first semiconductor 10 is only switched on and off several times during the positive half-wave of the sinusoidal mains voltage, and remains switched on during the negative half-wave.
  • the other semiconductor 14, on the other hand is constantly switched on and off, the ratio between the switch-on and switch-off times depending on the respective level of the mains voltage.
  • the third semiconductor 20 and the fifth semiconductor 32 are turned on during the positive half-wave and off during the negative half-wave. The reverse applies to the semiconductor 26.
  • the pulsed second semiconductor 14 applies a current to the inductor 8 during its conductive state, which current is taken from the DC voltage connections 12, 16 via the then closed semiconductor 10. Here, energy is stored in the throttle 8. If the second semiconductor 14 opens again, the energy stored in the choke 8 is fed to the AC voltage outputs via the first semiconductor 10 and the second series connection. This process is repeated in quick succession for the duration of the positive half-wave.
  • the energy stored in the inductor 8 during the negative half-wave after simultaneous blocking of the first and second semiconductors 10, 14 is obtained when the two semiconductors 14, 10 are simultaneously conducted via the first series circuit and the fourth semiconductor which is in series with the second diode 24 26 supplied to the AC voltage connections.
  • the pulse pattern is obtained from a control circuit in which the pulse duty factor (ON / OFF) is derived from an error amplifier, which is supplied with a setpoint (for example a sine function) and an actual value of the alternating voltage or alternating current generated.
  • the error amplifier then varies the pulse pattern supplied to the semiconductors 14, 10 accordingly.
  • the signal supplied to the other semiconductors 20, 26, 32 is correspondingly generated in the respective zero crossing on the AC voltage side.
  • the diodes 18, 24 can be replaced by controllable semiconductors, which are then suitably controlled by the microcontroller.
  • switching patterns with variable frequency such as occur in resonant converters, are also possible for the semiconductors 10 and 14.
  • the semiconductors 10 and 14 are either switched off or de-energized, which enables higher switching frequencies due to a lower loss line, and a reduced inductance 8. Small additional capacities or inductors enable this currentless or voltage-free switching.
  • the switching patterns for the semiconductors 10 and 14 differ in that the sum of the on and off times is no longer constant, i.e. the frequency of the pulse-modulated switching pattern is variable.

Abstract

The invention relates to an inverter having two constant voltage connections and two alternating voltage connections and multiple semiconductor switches controlled by a microcontroller. Said inverter also comprises an inductor (8) having a first side connected with a constant voltage input (12) by a first semiconductor switch (10) and another side connected to the other constant voltage input (16) by a second semiconductor (14), a first series connection that is placed between one side of the choke (8) and a constant voltage output (22) composed of a first diode (18) and a third semiconductor switch (20), a second series connection placed between the other side of the choke (8) and a constant voltage output (22) composed of a second diode (24) and a fourth semiconductor switch (26), and a fifth semiconductor switch (32) joining the central point of the second series connection with a connecting line that directly links one of the other constant voltage connections (12) with the other alternating voltage output. During a half-wave, the microcontroller closes the first semiconductor switch (10) and the fourth semiconductor switch (26) while during the other half-wave, the third semiconductor switch (14) and the fifth semiconductor switch (32) are closed by the microcontroller. Said microcontroller pulse switches the second semiconductor switch (14) during a first half-wave and it pulse switches the first and the second semiconductor switches (10, 14) during the other half-wave.

Description

Wechselrichter Inverter
Die Erfindung betrifft einen Wechselrichter gemäß dem Oberbegriff des Anspruchs 1, wie er aus der US-Z.: C. M. Penalver, u. a. : Mikroprocessor Control of DC/AC Static Converters", in: IEEE Transactions on Industrial Electronics, Vol. IE-32, No. 3, August 1985, S. 186 - 191 bekannt ist.The invention relates to an inverter according to the preamble of claim 1, as it from the US Z .: C. M. Penalver, u. a. : Microprocessor Control of DC / AC Static Converters ", in: IEEE Transactions on Industrial Electronics, Vol. IE-32, No. 3, August 1985, pp. 186-191.
Aus der AT 381 813 B ist es bei einer Schaltungsanordnung zur Erzeugung einer bipolaren Ausgangsspannung aus einer unipolaren Eingangsspannung bekannt, eine Drossel zu verwenden, deren eine Seite über einen ersten Halbleiter mit dem einen Gleichspannungseingang und deren andere Seite über einen zweiten Halbleiter mit dem anderen Gleichspannungseingang verbunden ist, wobei die Drossel entsprechend dem Ein-/Aus-Zyklus der zugeordneten Schalter Energie speichert.From AT 381 813 B it is known in a circuit arrangement for generating a bipolar output voltage from a unipolar input voltage to use a choke, one side of which has a first semiconductor with one DC voltage input and the other side of which has a second semiconductor with the other DC voltage input is connected, the choke storing energy in accordance with the on / off cycle of the associated switches.
Die bisher üblichen Wechselrichter haben folgende Nachteile: Bei Verwendung von 50 Hz-Transformatoren sind die Geräte schwer und voluminös. Bei Verwendung von HF- Transformatoren entstehen hohe Verluste. Bei den Schaltungen, die auf einen Transformator verzichten, wird eine relativ hohe Eingangsspannung benötigt, das Gleich- spannungspotential liegt nicht kontinuierlich auf Masse. Bei der Verwendung von Thyristorwechselrichtern ist der erzeugte Wechselstrom mit relativ hohen Klirrfaktoren behaftet. Der Erfindung liegt die Aufgabe zugrunde, einen leichten, verlustarmen und mit einem geringen Klirrfaktor behafteten Wechselrichter zu schaffen.The conventional inverters have the following disadvantages: When using 50 Hz transformers, the devices are heavy and bulky. High losses occur when using HF transformers. A relatively high input voltage is required for circuits that do not use a transformer; the DC potential is not continuously at ground. When using thyristor inverters, the alternating current generated has relatively high distortion factors. The invention has for its object to provide a light, low-loss inverter with a low distortion factor.
Erfindungsgemäß wird diese Aufgabe durch die Merkmale des Anspruchs 1 gelöst. Die Unteransprüche geben bevorzugte Ausgestaltungen der Erfindung an.According to the invention, this object is achieved by the features of claim 1. The subclaims indicate preferred embodiments of the invention.
Die Erfindung wird im folgenden anhand einer Zeichnung erläutert. Dabei zeigt:The invention is explained below with reference to a drawing. It shows:
Fig. 1 das Schaltbild eines solchen Wechselrichters, undFig. 1 shows the circuit diagram of such an inverter, and
Fig. 2 ein Schaltmuster, mit dem die Halbleiterschalter in Abhängigkeit von dem Verlauf der Wechselspannung geschaltet werden.2 shows a switching pattern with which the semiconductor switches are switched depending on the profile of the AC voltage.
Die Schaltung besteht aus einem Kondensator 34, der über den Wechselspannungseingängen 12, 16 liegt. Eine Drossel 8 ist vorgesehen, deren eine Seite über einen ersten Halbleiter 10 mit dem einen Gleichspannungsanschluß 12 und deren andere Seite über einen zweiten Halbleiter 14 mit dem anderen Gleichspannungseingang verbunden ist.The circuit consists of a capacitor 34, which lies across the AC voltage inputs 12, 16. A choke 8 is provided, one side of which is connected to the one DC voltage connection 12 via a first semiconductor 10 and the other side of which is connected to the other DC voltage input via a second semiconductor 14.
Zwischen der einen Seite der Drossel und dem einen Wechselspannungsausgang 22 liegt eine erste Reihenschaltung, die aus einer ersten Diode 18 und einem dritten Halbleiter 20 gebildet ist, zwischen der anderen Seite der Drossel 8 und dem einen Wechselspannungsausgang 22 liegt weiter eine zweite Reihenschaltung, die aus einer zweiten Diode 24 und einem vierten Halbleiter 26 gebildet ist.Between the one side of the inductor and the one AC voltage output 22 there is a first series circuit which is formed from a first diode 18 and a third semiconductor 20, between the other side of the inductor 8 and the one AC voltage output 22 there is also a second series circuit which is made up a second diode 24 and a fourth semiconductor 26 is formed.
Ein fünfter Halbleiter 32 verbindet den Mittelpunkt der zweiten Reihenschaltung mit einer den anderen Gleich- spannungseingang direkt mit dem anderen Wechselspannungsausgang verbindenden Leitung.A fifth semiconductor 32 connects the center of the second series connection with one another. voltage input directly to the line connecting the other AC voltage output.
Ein - nicht gezeigter - Mikrocontroller schaltet die Halbleiter 10, 14, 20, 26 und 32. Der erste Halbleiter 10 wird nur während der positiven Halbwelle der sinusförmigen Netzspannung mehrfach ein- und ausgeschaltet, während der negativen Halbwelle bleibt er eingeschaltet. Der andere Halbleiter 14 wird dagegen ständig ein- und ausgeschaltet, wobei das Verhältnis zwischen den Ein- und Ausschaltzeiten von der jeweiligen Höhe der Netzspannung abhängig ist. Der dritte Halbleiter 20 und der fünfte Halbleiter 32 werden während der positiven Halbwelle ein- und während der negativen Halbwelle ausgeschaltet. Für den Halbleiter 26 gilt das Umgekehrte.A - not shown - microcontroller switches the semiconductors 10, 14, 20, 26 and 32. The first semiconductor 10 is only switched on and off several times during the positive half-wave of the sinusoidal mains voltage, and remains switched on during the negative half-wave. The other semiconductor 14, on the other hand, is constantly switched on and off, the ratio between the switch-on and switch-off times depending on the respective level of the mains voltage. The third semiconductor 20 and the fifth semiconductor 32 are turned on during the positive half-wave and off during the negative half-wave. The reverse applies to the semiconductor 26.
Der gepulst geschaltete zweite Halbleiter 14 beaufschlagt während seines leitenden Zustands die Drossel 8 mit einem Strom, der über den dann geschlossenen Halbleiter 10 den Gleichspannungsanschlüssen 12, 16 entnommen wird. Hierbei wird in der Drossel 8 Energie gespeichert. Öffnet nun der zweite Halbleiter 14 wieder, wird die in der Drossel 8 gespeicherte Energie über den ersten Halbleiter 10 und die zweite Reihenschaltung den Wechselspannungsausgängen zugeführt. Dieser Vorgang wiederholt sich in schneller Folge für die Dauer der positiven Halbwelle.The pulsed second semiconductor 14 applies a current to the inductor 8 during its conductive state, which current is taken from the DC voltage connections 12, 16 via the then closed semiconductor 10. Here, energy is stored in the throttle 8. If the second semiconductor 14 opens again, the energy stored in the choke 8 is fed to the AC voltage outputs via the first semiconductor 10 and the second series connection. This process is repeated in quick succession for the duration of the positive half-wave.
Die während der negativen Halbwelle in der Drossel 8 nach gleichzeitigem Sperren des ersten und des zweiten Halbleiter 10, 14 gespeicherte Energie wird bei gleichzeitigem Leiten der beiden Halbleiter 14, 10 über die erste Reihenschaltung und den in Reihe mit der zweiten Diode 24 liegenden leitenden vierten Halbleiter 26 den Wechselspannungsanschlüssen zugeführt. Das Pulsmuster wird aus einer Ansteuerschaltung gewonnen, in der das Tastverhältnis der Pulse (EIN/AUS) aus einem Fehlerverstärker abgeleitet wird, dem zum einen ein Sollwert (beispielsweise eine Sinusfunktion) und zum anderen ein Istwert der erzeugten Wechselspannung bzw. des Wechselstromes zugeführt wird. Der Fehlerverstärker variiert daraufhin entsprechend das den Halbleiter 14, 10 zugeführte Pulsmuster. Das den anderen Halbleiter 20, 26, 32 zugeführte Signal wird entsprechend im jeweiligen Nulldurchgang der Wechselspannungsseite erzeugt.The energy stored in the inductor 8 during the negative half-wave after simultaneous blocking of the first and second semiconductors 10, 14 is obtained when the two semiconductors 14, 10 are simultaneously conducted via the first series circuit and the fourth semiconductor which is in series with the second diode 24 26 supplied to the AC voltage connections. The pulse pattern is obtained from a control circuit in which the pulse duty factor (ON / OFF) is derived from an error amplifier, which is supplied with a setpoint (for example a sine function) and an actual value of the alternating voltage or alternating current generated. The error amplifier then varies the pulse pattern supplied to the semiconductors 14, 10 accordingly. The signal supplied to the other semiconductors 20, 26, 32 is correspondingly generated in the respective zero crossing on the AC voltage side.
Bei Verwendung des Wechselrichters in einem Inselbetrieb können die Dioden 18, 24 durch steuerbare Halbleiter ersetzt werden, die dann von dem Mikrocontroller geeignet anzusteuern sind.When using the inverter in an island operation, the diodes 18, 24 can be replaced by controllable semiconductors, which are then suitably controlled by the microcontroller.
Alternativ zu dem in Fig. 2 dargestellten Schaltmuster sind für die Halbleiter 10 und 14 auch Schaltmuster mit variabler Frequenz möglich, wie sie in Resonanzwandlern vorkommen. Dabei werden die Halbleiter 10 und 14 entweder stromlos oder spannungslos geschaltet, was durch geringere Verlustleitung höhere Schaltfrequenzen ermöglicht, und eine verkleinerte Induktivität 8 erlaubt. Kleine zusätzlich Kapazitäten bzw. Induktivitäten ermöglichen dieses stromlose bzw. spannungslose Schalten.As an alternative to the switching pattern shown in FIG. 2, switching patterns with variable frequency, such as occur in resonant converters, are also possible for the semiconductors 10 and 14. In this case, the semiconductors 10 and 14 are either switched off or de-energized, which enables higher switching frequencies due to a lower loss line, and a reduced inductance 8. Small additional capacities or inductors enable this currentless or voltage-free switching.
Die Schaltmuster für die Halbleiter 10 und 14 unterscheiden sich dadurch, daß die Summe von Ein- und Ausschaltzeit nicht mehr konstant ist, d.h. die Frequenz des pulsmodulierten Schaltmusters variable ist. The switching patterns for the semiconductors 10 and 14 differ in that the sum of the on and off times is no longer constant, i.e. the frequency of the pulse-modulated switching pattern is variable.

Claims

ANSPRUCHE EXPECTATIONS
1. Mikrocontroller-gesteuerter Einphasen-Wechsel- richter mit zwei Gleichspannungsanschlussen und zwei Wechselspannungsanschlüssen und einer Mehrzahl von von einem Mikrocontroller gesteuerten Halbleitern,1. microcontroller-controlled single-phase inverter with two DC voltage connections and two AC voltage connections and a plurality of semiconductors controlled by a microcontroller,
gekennzeichnet durchmarked by
eine Drossel (8), deren eine Seite über einen ersten Halbleiter (10) mit dem einen Gleichspannungseingang (12) und deren andere Seite über einen zweiten Halbleiter (14) mit dem anderen Gleichspannungseingang (16) verbunden ist,a choke (8), one side of which is connected to the one DC voltage input (12) via a first semiconductor (10) and the other side of which is connected to the other DC voltage input (16) via a second semiconductor (14),
eine zwischen der einen Seite der Drossel (8) und dem einen Wechselspannungsausgang (22) liegenden, aus einer ersten Diode (18) und einem dritten Halbleiter (20) gebildeten ersten Reihenschaltung,a first series circuit formed between the one side of the choke (8) and the one AC voltage output (22) and formed from a first diode (18) and a third semiconductor (20),
eine zwischen der anderen Seite der Drossel (8) und dem einen Wechselspannungsausgang (22) liegende, aus einer zweiten Diode (24) und einem vierten Halbleiter (26) gebildeten zweiten Reihenschaltung, unda second series circuit formed between the other side of the choke (8) and the one AC voltage output (22) and formed from a second diode (24) and a fourth semiconductor (26), and
einen den Mittelpunkt der zweiten Reihenschaltung mit einer den anderen Gleichspannungseingang (12) direkt mit dem anderen Wechselspannungsausgang (30) verbindende Leitung verbindenden fünften Halbleiter (32),a fifth semiconductor (32) connecting the center of the second series circuit with a line connecting the other DC voltage input (12) directly to the other AC voltage output (30),
wobei der Mikrocontroller während der einen Halbwelle den ersten Halbleiter (10) und den vierten Halbleiter (26) und während der andere Halbwelle den dritten Halbleiter (20) und den fünften Halbleiter (32) sperrt, undin which the microcontroller blocks the first semiconductor (10) and the fourth semiconductor (26) during the one half-wave and the third semiconductor (20) and the fifth semiconductor (32) during the other half-wave, and
der Mikrocontroller während der einen Halbwelle den zweiten Halbleiter (14) gepulst schaltet und während der anderen Halbwelle den ersten und den zweiten Halbleiter (10, 14) gepulst schaltet.the microcontroller switches the second semiconductor (14) in a pulsed manner during the one half-wave and switches the first and second semiconductors (10, 14) in a pulsed manner during the other half-wave.
2. Wechselrichter nach Anspruch 1, gekennzeichnet durch einen über den Gleichspannungseingängen (12, 16) liegenden ersten Kondensator (34) .2. Inverter according to claim 1, characterized by a first capacitor (34) lying above the DC voltage inputs (12, 16).
3. Wechselrichter nach Anspruch 1 oder 2 , gekennzeichnet durch einen über den Wechselspannungsausgän- gen (30, 22) liegenden zweiten Kondensator (36) .3. Inverter according to claim 1 or 2, characterized by a over the AC voltage outputs (30, 22) lying second capacitor (36).
4. Wechselrichter nach einem der vorangehenden Ansprüche, dadurch gekennzeichnet, daß die Halbleiter mit parallelen Inversdioden versehen sind.4. Inverter according to one of the preceding claims, characterized in that the semiconductors are provided with parallel inverse diodes.
5. Wechselrichter nach einem der vorangehenden Ansprüche, dadurch gekennzeichnet, daß die Halbleiter (10, 14) mit einem Schaltmuster mit variabler Frequenz versehen sind. 5. Inverter according to one of the preceding claims, characterized in that the semiconductors (10, 14) are provided with a switching pattern with variable frequency.
PCT/DE1997/002334 1996-10-15 1997-10-13 Inverter WO1998016994A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19642522A DE19642522C1 (en) 1996-10-15 1996-10-15 Inverter
DE19642522.0 1996-10-15

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CN103765754A (en) * 2011-08-17 2014-04-30 艾思玛太阳能技术股份公司 Inverter with coupled inductances
US9281755B2 (en) 2011-08-17 2016-03-08 Sma Solar Technology Ag Inverter with coupled inductances
CN103765754B (en) * 2011-08-17 2016-06-01 艾思玛太阳能技术股份公司 There is the invertor of coupling inductance
WO2015152745A1 (en) 2014-04-05 2015-10-08 Inov Inesc Inovação Instituto De Novas Tecnologias Electronic energy conversion circuit, energy arrangement presenting said circuit and process of operation of said circuit

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