WO1997022166A3 - Durchstimmbare, justierstabile halbleiterlaserlichtquelle sowie ein verfahren zur optisch stabilen, weitgehend kontinuierlichen durchstimmung von halbleiterlasern - Google Patents

Durchstimmbare, justierstabile halbleiterlaserlichtquelle sowie ein verfahren zur optisch stabilen, weitgehend kontinuierlichen durchstimmung von halbleiterlasern Download PDF

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Publication number
WO1997022166A3
WO1997022166A3 PCT/DE1996/002458 DE9602458W WO9722166A3 WO 1997022166 A3 WO1997022166 A3 WO 1997022166A3 DE 9602458 W DE9602458 W DE 9602458W WO 9722166 A3 WO9722166 A3 WO 9722166A3
Authority
WO
WIPO (PCT)
Prior art keywords
laser light
stable
freedom
semiconductor laser
light source
Prior art date
Application number
PCT/DE1996/002458
Other languages
English (en)
French (fr)
Other versions
WO1997022166A2 (de
Inventor
Manfred Gabbert
Wolfgang Reinecke
Original Assignee
Manfred Gabbert
Wolfgang Reinecke
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Manfred Gabbert, Wolfgang Reinecke filed Critical Manfred Gabbert
Priority to JP9521621A priority Critical patent/JP2000501887A/ja
Priority to US09/077,957 priority patent/US6785305B1/en
Priority to EP96946101A priority patent/EP0867057A2/de
Publication of WO1997022166A2 publication Critical patent/WO1997022166A2/de
Publication of WO1997022166A3 publication Critical patent/WO1997022166A3/de

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02255—Out-coupling of light using beam deflecting elements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/02—Details
    • G01J3/10—Arrangements of light sources specially adapted for spectrometry or colorimetry
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28—Investigating the spectrum
    • G01J3/42—Absorption spectrometry; Double beam spectrometry; Flicker spectrometry; Reflection spectrometry
    • G01J3/433—Modulation spectrometry; Derivative spectrometry
    • G01J3/4338—Frequency modulated spectrometry
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/08018—Mode suppression
    • H01S3/08022—Longitudinal modes
    • H01S3/08031—Single-mode emission
    • H01S3/08036—Single-mode emission using intracavity dispersive, polarising or birefringent elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/08018—Mode suppression
    • H01S3/0804—Transverse or lateral modes
    • H01S3/0805—Transverse or lateral modes by apertures, e.g. pin-holes or knife-edges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/08059—Constructional details of the reflector, e.g. shape
    • H01S3/08068—Holes; Stepped surface; Special cross-section
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/081—Construction or shape of optical resonators or components thereof comprising three or more reflectors
    • H01S3/0813—Configuration of resonator
    • H01S3/0815—Configuration of resonator having 3 reflectors, e.g. V-shaped resonators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/105—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02257—Out-coupling of light using windows, e.g. specially adapted for back-reflecting light to a detector inside the housing

Abstract

Bisher verfügbare, kontinuierlich durchstimmbare Halbleiterlaserlichtquellen mit externem Resonatoranteil sind dadurch vergleichsweise aufwendig, daß sie neben dem einen Freiheitsgrad, der zur Wellenlängendurchstimmung und gegebenenfalls einem weiteren, der zum Vermeiden von Modensprüngen erforderlich ist, weitere Freiheitsgrade enthalten, die allein sehr empfindlich in optimaler Stellung zu halten sind. Dieser Nachteil soll durch eine neuartige Anordnung überwunden werden. Die vorzugsweise weitgehend entspiegelte Facette eines Laserchips wird mit einem optischen System auf einen Reflektor abgebildet. Dadurch tritt zum einen durch den Katzenaugeneffekt eine wesentliche Erhöhung der Justiertoleranz auf und zum anderen ist dadurch, daß das optische System mit einer hohen Farblängsabweichung versehen ist, eine Wellenlängendurchstimmung durch Verschieben von Teilen des Gesamtsystems gegenüber anderen Teilen des Gesamtsystems möglich. Auf diese Weise kann eine modensprungfrei durchstimmbare Halbleiterlaserlichtquelle mit höchstens zwei verstellbaren Freiheitsgraden aufgebaut werden. Anwendung u.a. in der optischen Spektroskopie.
PCT/DE1996/002458 1995-12-14 1996-12-13 Durchstimmbare, justierstabile halbleiterlaserlichtquelle sowie ein verfahren zur optisch stabilen, weitgehend kontinuierlichen durchstimmung von halbleiterlasern WO1997022166A2 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP9521621A JP2000501887A (ja) 1995-12-14 1996-12-13 同調可能かつ調整が安定な半導体レーザ光源及び半導体レーザの光学的に安定なほぼ連続的な同調のための方法
US09/077,957 US6785305B1 (en) 1995-12-14 1996-12-13 Tuneable, adjustment-stable semiconductor laser light source and a method for the optically stable, largely continuous tuning of semiconductor lasers
EP96946101A EP0867057A2 (de) 1995-12-14 1996-12-13 Durchstimmbare, justierstabile halbleiterlaserlichtquelle sowie ein verfahren zur optisch stabilen, weitgehend kontinuierlichen durchstimmung von halbleiterlasern

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19548647.1 1995-12-14
DE19548647A DE19548647C2 (de) 1995-12-14 1995-12-14 Durchstimmbare, justierstabile Halbleiterlaserlichtquelle sowie ein Verfahren zur optisch stabilen, weitgehend kontinuierlichen Durchstimmung von Halbleiterlasern

Publications (2)

Publication Number Publication Date
WO1997022166A2 WO1997022166A2 (de) 1997-06-19
WO1997022166A3 true WO1997022166A3 (de) 1997-08-14

Family

ID=7781351

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE1996/002458 WO1997022166A2 (de) 1995-12-14 1996-12-13 Durchstimmbare, justierstabile halbleiterlaserlichtquelle sowie ein verfahren zur optisch stabilen, weitgehend kontinuierlichen durchstimmung von halbleiterlasern

Country Status (5)

Country Link
US (1) US6785305B1 (de)
EP (1) EP0867057A2 (de)
JP (1) JP2000501887A (de)
DE (1) DE19548647C2 (de)
WO (1) WO1997022166A2 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004050118A1 (de) * 2004-07-30 2006-03-23 Osram Opto Semiconductors Gmbh Halbleiterlaserbauelement, optische Vorrichtung für ein Halbleiterlaserbauelement und Verfahren zur Herstellung einer optischen Vorrichtung
US20070002922A1 (en) * 2005-06-30 2007-01-04 Intel Corporation Retro-reflecting lens for external cavity optics
JP2016134484A (ja) * 2015-01-19 2016-07-25 国立大学法人大阪大学 レーザー共振装置、及びそれを備えたレーザー装置、並びに、可変型バンドパスフィルタ装置
DE102018208147A1 (de) * 2018-05-24 2019-11-28 Carl Zeiss Smt Gmbh Messanordnung zur frequenszbasierten Positionsbestimmung einer Komponente
CN112821191A (zh) * 2020-12-31 2021-05-18 中国电子科技集团公司第十三研究所 半导体激光器驱动电路、多线激光器及多线激光雷达

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3663897A (en) * 1969-02-06 1972-05-16 Inst Angewandte Physik Method of modulating a laser beam and related apparatus
JPH0294489A (ja) * 1988-09-29 1990-04-05 Nec Corp 光機能素子
JPH03209638A (ja) * 1990-01-11 1991-09-12 Fujitsu Ltd 光学ヘッド
EP0587154A2 (de) * 1992-09-10 1994-03-16 Hughes Aircraft Company Vielfachlasersystem mit schmaler Bandbreite

Family Cites Families (7)

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Publication number Priority date Publication date Assignee Title
DE2051328B2 (de) 1970-10-20 1973-03-29 Fa. Carl Zeiss, 7920 Heidenheim Vorrichtung zur wellenlaengenselektion bei breitbandig emittierenden lasern
GB8807385D0 (en) 1988-03-29 1988-05-05 British Telecomm Semiconductor device assembly
US4907237A (en) * 1988-10-18 1990-03-06 The United States Of America As Represented By The Secretary Of Commerce Optical feedback locking of semiconductor lasers
US5172390A (en) * 1989-04-20 1992-12-15 Massachusetts Institute Of Technology Pre-aligned diode laser for external cavity operation
US5050179A (en) * 1989-04-20 1991-09-17 Massachusetts Institute Of Technology External cavity semiconductor laser
US5177750A (en) 1991-07-30 1993-01-05 Hewlett-Packard Company Misalignment-tolerant, grating-tuned external-cavity laser with enhanced longitudinal mode selectivity
US5524012A (en) * 1994-10-27 1996-06-04 New Focus, Inc. Tunable, multiple frequency laser diode

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3663897A (en) * 1969-02-06 1972-05-16 Inst Angewandte Physik Method of modulating a laser beam and related apparatus
JPH0294489A (ja) * 1988-09-29 1990-04-05 Nec Corp 光機能素子
JPH03209638A (ja) * 1990-01-11 1991-09-12 Fujitsu Ltd 光学ヘッド
EP0587154A2 (de) * 1992-09-10 1994-03-16 Hughes Aircraft Company Vielfachlasersystem mit schmaler Bandbreite

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
F. FAVRE: "external cavity semiconductor laser with 15 nm continuous tuning range", ELECTRONICS LETTERS, vol. 22, no. 15, 17 July 1986 (1986-07-17), STEVENAGE GB, pages 795 - 796, XP002032605 *
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PATENT ABSTRACTS OF JAPAN vol. 014, no. 292 (E - 0944) 25 June 1990 (1990-06-25) *
PATENT ABSTRACTS OF JAPAN vol. 015, no. 487 (P - 1286) 10 December 1991 (1991-12-10) *
ZORABEDIAN P ET AL: "INTERFERENCE-FILTER-TUNED, ALIGNMENT-STABILIZED, SEMICONDUCTOR EXTERNAL-CAVITY LASER", OPTICS LETTERS, vol. 13, no. 10, October 1988 (1988-10-01), pages 826 - 828, XP000050989 *

Also Published As

Publication number Publication date
DE19548647C2 (de) 2003-01-23
US6785305B1 (en) 2004-08-31
WO1997022166A2 (de) 1997-06-19
JP2000501887A (ja) 2000-02-15
EP0867057A2 (de) 1998-09-30
DE19548647A1 (de) 1997-06-26

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