WO1997020189A1 - Rate sensors - Google Patents
Rate sensors Download PDFInfo
- Publication number
- WO1997020189A1 WO1997020189A1 PCT/GB1996/002858 GB9602858W WO9720189A1 WO 1997020189 A1 WO1997020189 A1 WO 1997020189A1 GB 9602858 W GB9602858 W GB 9602858W WO 9720189 A1 WO9720189 A1 WO 9720189A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- ofthe
- spike
- plane
- rate sensor
- vibrating element
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
- G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
- G01C19/5719—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using planar vibrating masses driven in a translation vibration along an axis
- G01C19/5733—Structural details or topology
- G01C19/5755—Structural details or topology the devices having a single sensing mass
Definitions
- This invention relates to rate sensors of the kind including a resiliently-mounted element, an actuator that vibrates the element in a first plane, and a displacement sensor responsive to displacement ofthe vibrating element in a sensing direction normal to the first plane caused by rotation ofthe sensor about an axis in the plane and at right angles to the sensing direction.
- Vibrating element rate sensors such as tuning fork gyros, have an element driven to vibrate in one plane.
- a force is produced on the vibrating element orthogonal to the axis of rotation and the plane of vibration. This tends to cause deflection ofthe element, which is sensed by a suitable sensor, such as a capacitive pick-off.
- a rate sensor of the above-specified kind characterised in that the displacement sensor includes a tunnel pick-off having a first part located on the vibrating element and a second part separate from the vibrating element, one part including a spike and the other part including a surface closely spaced from the tip ofthe spike.
- the spike is preferably mounted on the vibrating element, the surface being on the second part.
- the tunnel pick-off may include two spikes, the surface having a recess located above one ofthe spikes, the output ofthe spike located beneath the recess being utilized to provide an output representative of vibration of the element.
- the sensor may include an actuator for maintaining constant average separation between the first part and the second part ofthe pick-off.
- the sensor may include an actuator so that the first and second parts can be displaced relative to one another from a position prior to use in which the or each spike is protected.
- the surface may have a recess positioned above the or each spike prior to use.
- the vibrating element is preferably a plate machined from a silicon substrate, the substrate supporting the second part ofthe tunnel pick-off
- the actuator that vibrates the element in the first plane is preferably an electrostatic actuator.
- the vibrating element may have two flexure arms, the vibrating element being tuned by removing material from a surface ofthe arms.
- a two-axis inertial rate sensor system including four pairs of rate sensors according to the above one aspect ofthe invention, characterised in that the rate sensors in each pair are mirror images of one another.
- Figure 1 is a plan view ofthe sensor
- Figures 2A and 2B are sectional side elevation views, to an enlarged scale, ofthe pick-off assembly along the line II-II in Figure 1 , showing the assembly at a rest and operational state respectively;
- Figure 3 is a sectional side elevation, to an enlarged scale, showing a part ofthe vibrating element along line III-III of Figure 1 ;
- Figure 4 is a plan view ofthe system
- Figure 5 is a plan view of a sensor with alternative actuators.
- the senor includes a silicon wafer substrate 1 of rectangular shape having a tine 2.
- the tine 2 is formed integrally from the wafer by using microengineering techniques, such as photolithography or micromachining, to cut an aperture extending around three sides ofthe tine.
- a second aperture 4 is cut laterally across the middle ofthe bottom of the tine 2 to leave two vertical flexure beams 5 and 6 providing the sole support for the tine in the wafer 1.
- the beams 5 and 6 are of rectangular section having their shorter sides parallel to the plane ofthe wafer, as shown in Figure 3. Between the beams 5 and 6, the tine has seven parallel teeth 7 extending vertically down and forming one half of an electrostatic comb actuator 8.
- the other half of the actuator 8 is provided by an assembly 9 mounted on the wafer 1 itself below the tine 2, which has six teeth 10 projecting upwardly between the teeth 7.
- the actuator 8 is connected to a drive unit 71, which applies an oscillating voltage between the two sets of teeth 7 and 10 so that the tine 2 is driven to vibrate in the direction "x" in the plane ofthe tine, at right angles to the length of the beams 5 and 6. More particularly, the teeth 7 are energized so that each tooth in the same comb has the opposite polarity from the adjacent tooth (+, -, +, - and so on). Also, the teeth 8 are similarly energized so that they each have opposite polarities from adjacent teeth in the same comb.
- the positively-charged teeth 7 are attracted to the neagatively-charged teeth 8, and the negatively-charged teeth 7 are attracted to those teeth 8 that are positively charged, causing movement ofthe tine 2 in one direction, at right angles to the length of the teeth. Reversing the polarity on one set of teeth causes the tine 2 to move in the opposite direction.
- the upper end ofthe wafer 1 supports a tunnel pick-off assembly 20 and an out-of- plane actuator assembly 30.
- a part of the tunnel pick-off assembly 20 is provided by two tunnel nanotips or spikes 21 and 21' projecting upwardly at right angles to the surface of the tine 2, side-by-side close to its upper edge.
- the spikes 21 and 21' are of conical shape and typically have a tip radius of about 5 nm.
- a tunnel pick-off is defined here as being one having a sharp discontinuity or spike that strips electrons from an adjacent surface when brought into close proximity, to produce a current that is proportional to the separation between the surface and the discontinuity. More than two spikes can be provided with only the outputs from the highest spikes being utilised.
- the spikes 21 and 21' may be formed by any conventional technique, such as by deposition through a stand-off mask or by laser- induced chemical vapour deposition (LICVD).
- the spikes may be of a diamond material.
- the other part of he pick-off assembly 20 is provided by a plate 22 extending parallel to the wafer 1 and closely spaced above it.
- the plate 22 is of rectangular shape, overlapping the upper region ofthe tine 2 on which the spikes 21 and 21' are located.
- the plate 22 has a conductive surface 27 on its underside and two small circular holes or similar recesses 51 and 51 ' through its thickness, which are positioned above the tunnel spikes 21 and 21' respectively when the plate 22 is in its rest position before use, as shown in Figure 2a.
- the pick-off plate 22 also has a hole or recess 52, of triangular shape, located a short distance below the left-hand circular hole 51.
- the circular holes 51 and 51 ' may be used as the stand-off masks through which the spikes 21 and 21' are deposited.
- the spikes 21 and 21' and the conductive underside 27 of the pick-off plate 22 are electrically connected to an electronics unit 72 to 75 functioning as a tunnel pick-off unit by which a voltage can be applied between the spikes and the plate.
- Two resilient suspension arms 23 and 24 project laterally on either side of the plate 22 and are terminated by short pillars 25 and 26 respectively attached to the upper surface of the wafer 1.
- the natural frequency ofthe pick-off plate suspension is selected to be higher than that of the tine 2.
- the suspension arms 23 and 24 hold the plate 22 above the tine 2 but allow it to be deflected up or down normal to the plane of the wafer along an axis "z", by the action ofthe out-of-plane actuator assembly 30.
- the out-of-plane actuator assembly 30 is of an electrostatic kind and comprises a lower metal electrode 31, mounted on the upper surface of the wafer 1 below the plate 22, and an upper electrode 32 mounted on the underside of the plate, directly above the lower electrode.
- the electrodes 31 and 32 are connected to the electronics unit 72 to 75, which acts as an out-of-plane actuator drive unit.
- the suspension arms 23 and 24 also allow the plate 22 to be displaced along a line parallel to the plane ofthe wafer 1 and at right angles to the arms, shown as the "y" axis. Displacement of the plate 22 along the y axis, parallel to the plane of the wafer 1 , is effected by means of an in-plane electrostatic actuator assembly 40.
- the in-plane actuator assembly 40 comprises a first part formed by a part of the plate 22 itself, in the form of an actuator arm 41 projecting upwardly along the y axis, the arm having four fingers 42 projecting outwardly from each side.
- the other part of the in-plane actuator assembly 40 comprises two sub-assemblies 43 and 44, one on each side of the arm 41.
- Each sub-assembly 43 and 44 has five fingers 45 extending inwardly towards one another, parallel to the x axis, which are interlaced with the fingers 42 on the arm 41.
- the fingers 42 and 45 are electrically connected to the electronics unit 72 to 75, which also serves as an in- plane actuator drive unit.
- the electronics unit 72 to 75 can apply a voltage between the fingers 42 and 45 to cause the plate 22 to be displaced either up or down along the y axis, at right angles to the length of the fingers, in the same way as with the tine actuator 8.
- the pick-off plate 22 is spaced above the tip of the spikes 21 and 21' by a short distance and the spikes are aligned with the holes 51 and 51', as shown in Figure 2A. In this way, the spikes 21 and 21' are protected, because, even if the plate 22 were deflected down towards the tine 2, it would not contact the spikes.
- a voltage is applied to the in-plane actuator assembly 40 sufficient to pull the pick-off plate 22 upwardly along the y axis, away from the tine 2, by a distance sufficient to move the protective holes 51 and 51' away from the spikes 21 and 21' and to position the triangular hole 52 directly above the left-hand spike 21, as shown in Figure 2B.
- the right- hand spike 21' is located below a plane surface provided by the underside 27 of the plate 22.
- a drive voltage is then applied to the tine actuator assembly 8 so that the tine 2 is driven to vibrate in the plane ofthe wafer 1 along the axis x.
- the actuator drive unit 71 is self tuning so that the tine 2 is driven at its resonant frequency at some nominal amplitude initially.
- a ramp voltage is then applied by the electronics unit 72 to 75 to the out-of-plane actuator assembly 30, so that the pick-off plate 22 is gradually moved down parallel to the z axis, towards the upper surface ofthe oscillating tine 2.
- the magnitude I of the current is given by the expression:
- Sensitivity ofthe sensor is about one order of magnitude for each A change in separation.
- the electronics unit 72 to 75 acts as a pick-off unit to monitor the mean current produced as the plate 22 is brought closer to the tip of the spike 21' and, when this reaches a predetermined value, corresponding to a predetermined separation, the ramp voltage is terminated and a servo voltage is applied so that this average separation is maintained.
- the separation between the tip ofthe spikes and the surface 27 of the plate 22 is ofthe same order as the tip radius, that is, about 5nm.
- the left-hand spike 21 produces a current output in the same way but, because this spike is located below the triangular hole 52, there will be a sharp drop in current when the spike passes under the hole.
- the electronics unit 72 to 75 monitors this output to derive a measure of the amplitude and frequency of oscillation of the tine 2 - this is used to servo control the magnitude ofthe signal applied by the in-plane actuator assembly 30.
- the tine 2 vibrates in the plane of the wafer 1 at a constant servo-controlled amplitude.
- the pick-off output current corresponds to the average servo-controlled gap between the tine 2 and the pick-off plate 22.
- an input rate is applied about the y axis, parallel to the plane of the wafer 1 and at right angles to the linear vibration ofthe tine 2, the tine will experience an oscillating Coriolis force tending to cause it to vibrate in a direction normal to the plane of the wafer, along the z axis.
- the frequency of this Coriolis force will be the same as the drive frequency ofthe tine.
- These minute oscillations are sensed by the pick-off assembly 20 and appear as a modulation of he mean tunnel current.
- the amplitude ofthe modulation corresponds to the magnitude ofthe input rate.
- the phase ofthe modulation compared with the phase of the drive voltage or the amplitude output ofthe pick-off 20, indicates the sense of the input rate, positive or negative.
- the tunnel gap is servoed to maintain a constant tunnel current; the out-of-plane actuator servo current then becomes a measure of input rate.
- the tunnel pick-off is sensitive to very small distances, its output will include noise caused by the surface discontinuities on the underside of the pick-off plate 22. However, the tunnel pick-off will trace the same path across the plate 22 for each oscillation, so the noise is cyclic and repeated, enabling it to be removed by digital signal processing or active filtering techniques.
- the Coriolis force is directly proportional to the linear velocity of the tines and this is proportional to the amplitude of vibration, so the sensitivity ofthe sensor can be readily altered by adjusting the amplitude of vibration of the tine 2 to accommodate different input rates.
- the high sensitivity of the tunnel pick-off means that only very small vibration in the sensing plane is needed and that the sensing amplitude can be considerably smaller than the drive amplitude, thereby minimizing non-linearities of response. It also means that the drive amplitudes can be relatively small, minimizing hysteresis and coupling losses to the surrounding structure.
- the inertial rate system shown in Figure 4 comprises four pairs of sensors indicated by the labels Yl to Y4 and XI to X4. Each sensor in a pair is a mirror image of the other sensor in the pair.
- the eight sensors are mounted on a square substrate 70, about 2cm square, together with the five associated electronics units 71 to 75.
- the sensors and electronics units are preferably formed directly in the substrate, with the wafer 1 being a part of a silicon substrate, although they could be formed separately and subsequently mounted on the substrate.
- Each pair of sensors Yl and Y2, Y3 and Y4, XI and X2, and X3 and X4 is mounted centrally along the sides of substrate 70 with the unit 71 located centrally and the other units 72 to 75 located in opposite corners.
- the substrate could have additional slots and apertures to provide a flexible mounting ofthe sensors and thereby mechanically isolate them from the outside world.
- the central unit 71 contains electronics for driving the tines 2 of all eight sensors, the other four units 72 to 75 contain electronics for driving the in-plane actuator 40, the out-of-plane actuator 30 and for processing the outputs ofthe pick-off assemblies 20 and the out-of-plane actuators 30 of adjacent pairs of sensors.
- the sensors are arranged so that the both the x and y axis inputs have four inertially-balanced sensors with four tines vibrating in antiphase so that the tunnel pick-offs can provide a differential output signal with a good common mode rejection. This allows independent rate detection about two orthogonal axes.
- the resonant frequency of all eight tines in the system should be identical both in the plane of driven vibration and at right angles to this, in the sensing plane.
- the tines are initially machined to give them a natural frequency slightly higher in the sensing plane than in the driven plane.
- the tines are then frequency trimmed by ablating a small amount of material from the upper or lower surface, or both surfaces, of each flexure beam 5 and 6, close to a point P of maximum stress. This removal of material may be carried out by a focussed electron beam or laser.
- the flexure beams 5 and 6 have a neutral axis N[ for in-plane vibration that extends vertically out ofthe plane centrally across the width ofthe beam, and a neutral axis N 2 for out-of-plane vibration that extends horizontally centrally across the thickness of the beam.
- N[ for in-plane vibration that extends vertically out ofthe plane centrally across the width ofthe beam and a neutral axis N 2 for out-of-plane vibration that extends horizontally centrally across the thickness of the beam.
- Tuning is achieved by simultaneously exciting the tines 2 in both directions and monitoring their frequencies via their respective tunnel pick-off assemblies 20.
- the tines 2 are excited in the out-of-plane direction by applying an intermittent drive signal to the underside of the pick-off plate 22, with the out-of-plane actuator 30 being used to cancel out the reaction force and prevent the pick-off plate going into resonance.
- the beams are automatically trimmed until the two resonant frequencies become equal.
- the electrostatic actuators 8 and 40 described above have two combs with interdigitated fingers or teeth, one comb moving at right angles to the length of the fingers or teeth.
- Figure 5 shows a sensor with a tine actuator 8' and an in-plane actuator 40' where movement is effected parallel to the length ofthe fingers or teeth.
- the tine actuator 8' has a central structure 80 fixed on the wafer 1', with a set of five teeth 81 projecting to the left and five teeth 82 projecting to the right. These two sets of teeth 81 and 82 are interdigitated with respective pairs of teeth 83 and 84 on the tine 2', which extend at right angles to the length of the tine.
- Oscillation ofthe tine 2' is produced by applying a voltage of the same polarity to all the tine teeth 83 and 84, and by applying a voltage of one polarity to the teeth 81 , on one side ofthe fixed structure 80, and ofthe opposite polarity to the teeth 82 on the opposite side of the fixed structure.
- the teeth 83 and 84 were to have a positive charge
- the teeth 81 a positive charge
- the tine 2' would move to the right.
- oscillation is produced.
- the in-plane actuator 40' has a set of teeth 90 on the pick-off plate 22' projecting parallel to the direction of desired displacement of the plate.
- a corresponding set of fixed teeth 91 is mounted on the wafer 1' and is interdigitated with the teeth 90.
- the senor will usually have a greater number of interdigitated teeth or fingers than described.
- the sensors ofthe present invention could be used in a system for measuring acceleration rather than rate.
- the sensors ofthe present invention can be made at low cost by microengineering techniques and are susceptible to automated manufacture, trimming and testing.
- the sensors are very compact and can have a high sensitivity.
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/068,535 US6092423A (en) | 1995-11-28 | 1996-11-20 | Tunnel pick-off vibrating rate sensor |
JP9520255A JP2000500870A (en) | 1995-11-28 | 1996-11-20 | Rate sensor |
EP96939175A EP0864074A1 (en) | 1995-11-28 | 1996-11-20 | Rate sensors |
AU76317/96A AU7631796A (en) | 1995-11-28 | 1996-11-20 | Rate sensors |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB9524241.8 | 1995-11-28 | ||
GBGB9524241.8A GB9524241D0 (en) | 1995-11-28 | 1995-11-28 | Rate sensors |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1997020189A1 true WO1997020189A1 (en) | 1997-06-05 |
Family
ID=10784522
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/GB1996/002858 WO1997020189A1 (en) | 1995-11-28 | 1996-11-20 | Rate sensors |
Country Status (6)
Country | Link |
---|---|
US (1) | US6092423A (en) |
EP (1) | EP0864074A1 (en) |
JP (1) | JP2000500870A (en) |
AU (1) | AU7631796A (en) |
GB (1) | GB9524241D0 (en) |
WO (1) | WO1997020189A1 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2000014476A1 (en) * | 1998-09-07 | 2000-03-16 | Quantum Precision Instruments Pty Ltd | Measurements using tunnelling current between elongate conductors |
WO2004094956A1 (en) * | 2003-04-22 | 2004-11-04 | Quantum Precision Instruments Asia Pte Ltd | Quantum tunnelling transducer device |
JP2012172970A (en) * | 2011-02-17 | 2012-09-10 | Seiko Epson Corp | Vibration device, method for manufacturing vibration device, motion sensor and electronic device |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
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US6630367B1 (en) | 2000-08-01 | 2003-10-07 | Hrl Laboratories, Llc | Single crystal dual wafer, tunneling sensor and a method of making same |
US6555404B1 (en) | 2000-08-01 | 2003-04-29 | Hrl Laboratories, Llc | Method of manufacturing a dual wafer tunneling gyroscope |
US6580138B1 (en) * | 2000-08-01 | 2003-06-17 | Hrl Laboratories, Llc | Single crystal, dual wafer, tunneling sensor or switch with silicon on insulator substrate and a method of making same |
US6563184B1 (en) | 2000-08-01 | 2003-05-13 | Hrl Laboratories, Llc | Single crystal tunneling sensor or switch with silicon beam structure and a method of making same |
US6674141B1 (en) * | 2000-08-01 | 2004-01-06 | Hrl Laboratories, Llc | Single crystal, tunneling and capacitive, three-axes sensor using eutectic bonding and a method of making same |
US6653611B2 (en) * | 2001-04-09 | 2003-11-25 | A-Tech Corporation | Optical line of sight pointing and stabilization system |
CN100383531C (en) * | 2004-09-08 | 2008-04-23 | 北京大学 | Differential overload-proof microchannel accelerometer and production thereof |
CN101420526B (en) * | 2007-10-26 | 2011-06-08 | 鸿富锦精密工业(深圳)有限公司 | Image sensor bearing device and camera module group |
PT2458357E (en) * | 2010-11-29 | 2014-06-11 | Air Prod & Chem | Method of, and apparatus for, measuring the pressure of a gas |
US9705450B2 (en) * | 2011-06-24 | 2017-07-11 | The United States Of America As Represented By The Secretary Of The Navy | Apparatus and methods for time domain measurement of oscillation perturbations |
US8427249B1 (en) * | 2011-10-19 | 2013-04-23 | The United States Of America As Represented By The Secretary Of The Navy | Resonator with reduced acceleration sensitivity and phase noise using time domain switch |
CN107976326B (en) * | 2017-12-04 | 2019-12-27 | 哈尔滨理工大学 | Method for acquiring dynamic flexibility of large-pitch thread machining system |
CN114720168B (en) * | 2022-04-29 | 2023-02-28 | 中国科学院武汉岩土力学研究所 | Tunnel engineering supporting structure deformation and control simulation test system |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0619494A1 (en) * | 1993-04-05 | 1994-10-12 | Siemens Aktiengesellschaft | Electron tunneling accelerometer |
EP0701135A1 (en) * | 1994-08-19 | 1996-03-13 | Hughes Aircraft Company | Single-wafer tunneling sensor and low-cost IC manufacturing method |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4267731A (en) * | 1980-02-11 | 1981-05-19 | Sperry Corporation | Force balanced vibratory rate sensor |
US5485053A (en) * | 1993-10-15 | 1996-01-16 | Univ America Catholic | Method and device for active constrained layer damping for vibration and sound control |
US5922212A (en) * | 1995-06-08 | 1999-07-13 | Nippondenso Co., Ltd | Semiconductor sensor having suspended thin-film structure and method for fabricating thin-film structure body |
-
1995
- 1995-11-28 GB GBGB9524241.8A patent/GB9524241D0/en active Pending
-
1996
- 1996-11-20 JP JP9520255A patent/JP2000500870A/en active Pending
- 1996-11-20 AU AU76317/96A patent/AU7631796A/en not_active Abandoned
- 1996-11-20 WO PCT/GB1996/002858 patent/WO1997020189A1/en not_active Application Discontinuation
- 1996-11-20 EP EP96939175A patent/EP0864074A1/en not_active Withdrawn
- 1996-11-20 US US09/068,535 patent/US6092423A/en not_active Expired - Lifetime
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0619494A1 (en) * | 1993-04-05 | 1994-10-12 | Siemens Aktiengesellschaft | Electron tunneling accelerometer |
EP0701135A1 (en) * | 1994-08-19 | 1996-03-13 | Hughes Aircraft Company | Single-wafer tunneling sensor and low-cost IC manufacturing method |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2000014476A1 (en) * | 1998-09-07 | 2000-03-16 | Quantum Precision Instruments Pty Ltd | Measurements using tunnelling current between elongate conductors |
US6707308B1 (en) | 1998-09-07 | 2004-03-16 | Quantum Precision Instruments Pty Ltd. | Measurements using tunnelling current between elongate conductors |
CN100437017C (en) * | 1998-09-07 | 2008-11-26 | 坤特精密仪器亚洲有限公司 | Measurements using tunnelling current between elongate conductors |
WO2004094956A1 (en) * | 2003-04-22 | 2004-11-04 | Quantum Precision Instruments Asia Pte Ltd | Quantum tunnelling transducer device |
CN100419383C (en) * | 2003-04-22 | 2008-09-17 | 量子精密仪器亚洲私人有限公司 | Quantum tunnelling transducer device |
US8033091B2 (en) | 2003-04-22 | 2011-10-11 | Quantum Precision Instruments Asia Pte Ltd. | Quantum tunnelling transducer device |
JP2012172970A (en) * | 2011-02-17 | 2012-09-10 | Seiko Epson Corp | Vibration device, method for manufacturing vibration device, motion sensor and electronic device |
Also Published As
Publication number | Publication date |
---|---|
JP2000500870A (en) | 2000-01-25 |
AU7631796A (en) | 1997-06-19 |
EP0864074A1 (en) | 1998-09-16 |
US6092423A (en) | 2000-07-25 |
GB9524241D0 (en) | 1996-01-31 |
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