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Publication numberWO1997013177 A1
Publication typeApplication
Application numberPCT/JP1996/002858
Publication date10 Apr 1997
Filing date2 Oct 1996
Priority date3 Oct 1995
Also published asCN1145839C, CN1165568A, CN1221843C, CN1388404A, CN1624551A, CN1881062A, CN1881062B, CN100414411C, CN101369579A, CN101369579B, CN103956361A, US5930607, US20030207506, US20050082541, US20050084999, US20050104071, US20050233509, USRE38292, USRE44267
Publication numberPCT/1996/2858, PCT/JP/1996/002858, PCT/JP/1996/02858, PCT/JP/96/002858, PCT/JP/96/02858, PCT/JP1996/002858, PCT/JP1996/02858, PCT/JP1996002858, PCT/JP199602858, PCT/JP96/002858, PCT/JP96/02858, PCT/JP96002858, PCT/JP9602858, WO 1997/013177 A1, WO 1997013177 A1, WO 1997013177A1, WO 9713177 A1, WO 9713177A1, WO-A1-1997013177, WO-A1-9713177, WO1997/013177A1, WO1997013177 A1, WO1997013177A1, WO9713177 A1, WO9713177A1
InventorsTakashi Satou
ApplicantSeiko Epson Corporation
Export CitationBiBTeX, EndNote, RefMan
External Links: Patentscope, Espacenet
Active matrix substrate
WO 1997013177 A1
Abstract
A novel method of producing an amorphous silicon thin-film transistor having a reverse stagger structure in fewer process steps, an active matrix substrate equipped with electrostatic protection produced by the production method, and a liquid crystal display device using the substrate. In the production process of a thin film transistor, a contact hole and an opening for connecting an external terminal are simultaneously formed, and an ITO film is used as a wiring. The electrostatic protection comprises a bidirectional diode (electrostatic protective device) constituted by an MOS transistor connected between an electrode (pad) for connecting the external terminal and a common potential line. The electrostatic protective device is substantially a transistor having a large current capacity, and can be formed by using an ordinary TFT process for pixels without causing complexity.
Patent Citations
Cited PatentFiling datePublication dateApplicantTitle
JPH0527263A * Title not available
JPH03296725A * Title not available
JPH05333377A * Title not available
JPH06148688A * Title not available
JPH06186592A * Title not available
JPH07244294A * Title not available
Referenced by
Citing PatentFiling datePublication dateApplicantTitle
WO2002056380A112 Dec 200118 Jul 2002Koninklijke Philips Electronics N.V.A method of manufacturing an active matrix substrate
US659978711 Jan 200229 Jul 2003Koninklijke Philips Electronics N.V.Method of manufacturing an active matrix substrate
US68387008 Aug 20034 Jan 2005Koninklijke Philips Electronics N.V.Active matrix substrate
US706798318 May 200427 Jun 2006Seiko Epson CorporationElectro-optical device and electronic apparatus
US77278222 Mar 20061 Jun 2010Sharp Kabushiki KaishaActive matrix substrate and liquid crystal display device, production methods thereof and electronic device
US78086062 Jul 20085 Oct 2010Seiko Epson CorporationMethod for manufacturing substrate, liquid crystal display apparatus and method for manufacturing the same, and electronic device
US822858525 Jan 201124 Jul 2012Seiko Epson CorporationSubstrate for electro-optical devices, electro-optical device and electronic apparatus
US846702821 Mar 200618 Jun 2013Japan Display West Inc.Electro-optical device and electronic apparatus
US882952912 Jul 20139 Sep 2014Semiconductor Energy Laboratory Co., Ltd.Illumination apparatus
US908268831 Dec 201214 Jul 2015Semiconductor Energy Laboratory Co., Ltd.Display device
US925794725 Jun 20149 Feb 2016Mitsubishi Electric CorporationSemiconductor device
US931861021 Apr 201419 Apr 2016Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method of manufacturing the same
US95369374 Nov 20143 Jan 2017Semiconductor Energy Laboratory Co., Ltd.Semiconductor device having a rectifying element connected to a pixel of a display device
US95704709 Jul 201514 Feb 2017Semiconductor Energy Laboratory Co., Ltd.Display device
US97049964 Sep 201411 Jul 2017Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
Classifications
International ClassificationH01L27/02, G02F1/1362
Cooperative ClassificationH01L2924/13091, G02F1/136204, G02F2202/103, H01L27/0266, H01L27/0255, H01L2224/48463
European ClassificationH01L27/02B4F2, G02F1/1362A, H01L27/02B4F6
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