WO1997008754A3 - SiC semiconductor device comprising a pn junction with a voltage absorbing edge - Google Patents

SiC semiconductor device comprising a pn junction with a voltage absorbing edge Download PDF

Info

Publication number
WO1997008754A3
WO1997008754A3 PCT/SE1996/001073 SE9601073W WO9708754A3 WO 1997008754 A3 WO1997008754 A3 WO 1997008754A3 SE 9601073 W SE9601073 W SE 9601073W WO 9708754 A3 WO9708754 A3 WO 9708754A3
Authority
WO
WIPO (PCT)
Prior art keywords
junction
semiconductor device
sic semiconductor
edge
voltage absorbing
Prior art date
Application number
PCT/SE1996/001073
Other languages
French (fr)
Other versions
WO1997008754A2 (en
Inventor
Mietek Bakowski
Bo Bijlenga
Ulf Gustafsson
Christopher Harris
Susan Savage
Original Assignee
Asea Brown Boveri
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asea Brown Boveri filed Critical Asea Brown Boveri
Priority to EP96929634A priority Critical patent/EP0847598B1/en
Priority to JP51019497A priority patent/JP4350798B2/en
Priority to DE69631664T priority patent/DE69631664T2/en
Publication of WO1997008754A2 publication Critical patent/WO1997008754A2/en
Publication of WO1997008754A3 publication Critical patent/WO1997008754A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/1608—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/8611—Planar PN junction diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/931—Silicon carbide semiconductor

Abstract

A semiconductor component, which comprises a pn junction, where both the p-conducting and the n-conducting layers of the pn junction constitute doped silicon carbide layers and where the edge of at least one of the conducting layers of the pn junction, exhibits a stepwise or uniformly decreasing total charge or effective surface charge density from the initial value at the defined working junction to a zero or almost zero total charge at the outermost edge of the junction following a radial direction from the central part of the junction towards the outermost edge.
PCT/SE1996/001073 1995-08-30 1996-08-30 SiC SEMICONDUCTOR DEVICE COMPRISING A PN JUNCTION WITH A VOLTAGE ABSORBING EDGE WO1997008754A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP96929634A EP0847598B1 (en) 1995-08-30 1996-08-30 SiC SEMICONDUCTOR DEVICE COMPRISING A PN JUNCTION WITH A VOLTAGE ABSORBING EDGE
JP51019497A JP4350798B2 (en) 1995-08-30 1996-08-30 SiC semiconductor device comprising a pn junction having a voltage absorbing edge
DE69631664T DE69631664T2 (en) 1995-08-30 1996-08-30 SiC SEMICONDUCTOR ARRANGEMENT WITH A PN TRANSITION, WHICH INCLUDES AN EDGE FOR ABSORPTION OF THE VOLTAGE

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/520,689 US5967795A (en) 1995-08-30 1995-08-30 SiC semiconductor device comprising a pn junction with a voltage absorbing edge
US520,689 1995-08-30

Publications (2)

Publication Number Publication Date
WO1997008754A2 WO1997008754A2 (en) 1997-03-06
WO1997008754A3 true WO1997008754A3 (en) 1997-10-30

Family

ID=24073679

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/SE1996/001073 WO1997008754A2 (en) 1995-08-30 1996-08-30 SiC SEMICONDUCTOR DEVICE COMPRISING A PN JUNCTION WITH A VOLTAGE ABSORBING EDGE

Country Status (5)

Country Link
US (2) US5967795A (en)
EP (1) EP0847598B1 (en)
JP (1) JP4350798B2 (en)
DE (1) DE69631664T2 (en)
WO (1) WO1997008754A2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8835987B2 (en) 2007-02-27 2014-09-16 Cree, Inc. Insulated gate bipolar transistors including current suppressing layers
US8859366B2 (en) 2005-05-24 2014-10-14 Cree, Inc. Methods of fabricating silicon carbide devices having smooth channels
US8901699B2 (en) 2005-05-11 2014-12-02 Cree, Inc. Silicon carbide junction barrier Schottky diodes with suppressed minority carrier injection
US9117739B2 (en) 2010-03-08 2015-08-25 Cree, Inc. Semiconductor devices with heterojunction barrier regions and methods of fabricating same
US9142662B2 (en) 2011-05-06 2015-09-22 Cree, Inc. Field effect transistor devices with low source resistance
US9548374B2 (en) 2006-08-17 2017-01-17 Cree, Inc. High power insulated gate bipolar transistors

Families Citing this family (78)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6002159A (en) * 1996-07-16 1999-12-14 Abb Research Ltd. SiC semiconductor device comprising a pn junction with a voltage absorbing edge
SE512259C2 (en) * 1998-03-23 2000-02-21 Abb Research Ltd Semiconductor device consisting of doped silicon carbide comprising a pn junction which exhibits at least one hollow defect and method for its preparation
WO1999053553A2 (en) 1998-04-09 1999-10-21 Koninklijke Philips Electronics N.V. Semiconductor device having a rectifying junction and method of manufacturing same
US6329675B2 (en) 1999-08-06 2001-12-11 Cree, Inc. Self-aligned bipolar junction silicon carbide transistors
US6218254B1 (en) 1999-09-22 2001-04-17 Cree Research, Inc. Method of fabricating a self-aligned bipolar junction transistor in silicon carbide and resulting devices
FR2803103B1 (en) * 1999-12-24 2003-08-29 St Microelectronics Sa SCHOTTKY DIODE ON SILICON CARBIDE SUBSTRATE
US6642558B1 (en) * 2000-03-20 2003-11-04 Koninklijke Philips Electronics N.V. Method and apparatus of terminating a high voltage solid state device
US6429041B1 (en) 2000-07-13 2002-08-06 Cree, Inc. Methods of fabricating silicon carbide inversion channel devices without the need to utilize P-type implantation
US6573128B1 (en) 2000-11-28 2003-06-03 Cree, Inc. Epitaxial edge termination for silicon carbide Schottky devices and methods of fabricating silicon carbide devices incorporating same
JP4011848B2 (en) * 2000-12-12 2007-11-21 関西電力株式会社 High voltage semiconductor device
US6844251B2 (en) * 2001-03-23 2005-01-18 Krishna Shenai Method of forming a semiconductor device with a junction termination layer
US6693308B2 (en) 2002-02-22 2004-02-17 Semisouth Laboratories, Llc Power SiC devices having raised guard rings
US9515135B2 (en) 2003-01-15 2016-12-06 Cree, Inc. Edge termination structures for silicon carbide devices
US7026650B2 (en) 2003-01-15 2006-04-11 Cree, Inc. Multiple floating guard ring edge termination for silicon carbide devices
JP4338701B2 (en) * 2003-04-09 2009-10-07 関西電力株式会社 Gate turn-off thyristor
US20050259368A1 (en) * 2003-11-12 2005-11-24 Ted Letavic Method and apparatus of terminating a high voltage solid state device
US20060006394A1 (en) * 2004-05-28 2006-01-12 Caracal, Inc. Silicon carbide Schottky diodes and fabrication method
US7812441B2 (en) 2004-10-21 2010-10-12 Siliconix Technology C.V. Schottky diode with improved surge capability
US7394158B2 (en) * 2004-10-21 2008-07-01 Siliconix Technology C.V. Solderable top metal for SiC device
US9419092B2 (en) * 2005-03-04 2016-08-16 Vishay-Siliconix Termination for SiC trench devices
US7834376B2 (en) 2005-03-04 2010-11-16 Siliconix Technology C. V. Power semiconductor switch
DE112006002377B4 (en) * 2005-09-08 2014-04-24 Mitsubishi Denki K.K. Semiconductor device and method of manufacturing a semiconductor device
US8368165B2 (en) * 2005-10-20 2013-02-05 Siliconix Technology C. V. Silicon carbide Schottky diode
US7372087B2 (en) * 2006-06-01 2008-05-13 Northrop Grumman Corporation Semiconductor structure for use in a static induction transistor having improved gate-to-drain breakdown voltage
KR101193453B1 (en) * 2006-07-31 2012-10-24 비쉐이-실리코닉스 Molybdenum barrier metal for sic schottky diode and process of manufacture
US7728402B2 (en) 2006-08-01 2010-06-01 Cree, Inc. Semiconductor devices including schottky diodes with controlled breakdown
US8432012B2 (en) 2006-08-01 2013-04-30 Cree, Inc. Semiconductor devices including schottky diodes having overlapping doped regions and methods of fabricating same
JP2007258742A (en) * 2007-05-23 2007-10-04 Kansai Electric Power Co Inc:The High breakdown-voltage semiconductor device
KR101494935B1 (en) 2007-11-09 2015-02-23 크리,인코포레이티드 Power semiconductor devices with mesa structures and buffer layers including mesa steps
US9640609B2 (en) * 2008-02-26 2017-05-02 Cree, Inc. Double guard ring edge termination for silicon carbide devices
JP3141688U (en) * 2008-02-29 2008-05-22 サンケン電気株式会社 Semiconductor device
US8232558B2 (en) 2008-05-21 2012-07-31 Cree, Inc. Junction barrier Schottky diodes with current surge capability
US8097919B2 (en) * 2008-08-11 2012-01-17 Cree, Inc. Mesa termination structures for power semiconductor devices including mesa step buffers
EP2175497B1 (en) * 2008-08-12 2019-11-20 Ascatron AB Avalanche photodiode for ultraviolet photon detection
US8497552B2 (en) 2008-12-01 2013-07-30 Cree, Inc. Semiconductor devices with current shifting regions and related methods
US8106487B2 (en) 2008-12-23 2012-01-31 Pratt & Whitney Rocketdyne, Inc. Semiconductor device having an inorganic coating layer applied over a junction termination extension
US8288220B2 (en) 2009-03-27 2012-10-16 Cree, Inc. Methods of forming semiconductor devices including epitaxial layers and related structures
US8294507B2 (en) 2009-05-08 2012-10-23 Cree, Inc. Wide bandgap bipolar turn-off thyristor having non-negative temperature coefficient and related control circuits
US8637386B2 (en) 2009-05-12 2014-01-28 Cree, Inc. Diffused junction termination structures for silicon carbide devices and methods of fabricating silicon carbide devices incorporating same
US8193848B2 (en) 2009-06-02 2012-06-05 Cree, Inc. Power switching devices having controllable surge current capabilities
US8629509B2 (en) 2009-06-02 2014-01-14 Cree, Inc. High voltage insulated gate bipolar transistors with minority carrier diverter
AU2010262784A1 (en) * 2009-06-19 2012-02-02 Power Integrations, Inc. Vertical junction field effect transistors and diodes having graded doped regions and methods of making
US8541787B2 (en) 2009-07-15 2013-09-24 Cree, Inc. High breakdown voltage wide band-gap MOS-gated bipolar junction transistors with avalanche capability
US8354690B2 (en) 2009-08-31 2013-01-15 Cree, Inc. Solid-state pinch off thyristor circuits
US20110084332A1 (en) * 2009-10-08 2011-04-14 Vishay General Semiconductor, Llc. Trench termination structure
SE537101C2 (en) * 2010-03-30 2015-01-07 Fairchild Semiconductor Semiconductor Component and Method for Designing a Structure in a Target Substrate for Manufacturing a Semiconductor Component
US8415671B2 (en) 2010-04-16 2013-04-09 Cree, Inc. Wide band-gap MOSFETs having a heterojunction under gate trenches thereof and related methods of forming such devices
USRE46464E1 (en) * 2010-12-14 2017-07-04 Lam Research Corporation Method for forming stair-step structures
US8535549B2 (en) * 2010-12-14 2013-09-17 Lam Research Corporation Method for forming stair-step structures
US8803277B2 (en) 2011-02-10 2014-08-12 Cree, Inc. Junction termination structures including guard ring extensions and methods of fabricating electronic devices incorporating same
US9318623B2 (en) 2011-04-05 2016-04-19 Cree, Inc. Recessed termination structures and methods of fabricating electronic devices including recessed termination structures
US9029945B2 (en) 2011-05-06 2015-05-12 Cree, Inc. Field effect transistor devices with low source resistance
US9349797B2 (en) 2011-05-16 2016-05-24 Cree, Inc. SiC devices with high blocking voltage terminated by a negative bevel
US9337268B2 (en) * 2011-05-16 2016-05-10 Cree, Inc. SiC devices with high blocking voltage terminated by a negative bevel
JP5745954B2 (en) * 2011-06-29 2015-07-08 三菱電機株式会社 Semiconductor device and manufacturing method thereof
US8680587B2 (en) 2011-09-11 2014-03-25 Cree, Inc. Schottky diode
JP2014531752A (en) 2011-09-11 2014-11-27 クリー インコーポレイテッドＣｒｅｅ Ｉｎｃ． High current density power module with transistors having improved layout
US9640617B2 (en) 2011-09-11 2017-05-02 Cree, Inc. High performance power module
US8664665B2 (en) 2011-09-11 2014-03-04 Cree, Inc. Schottky diode employing recesses for elements of junction barrier array
US9373617B2 (en) 2011-09-11 2016-06-21 Cree, Inc. High current, low switching loss SiC power module
US8618582B2 (en) 2011-09-11 2013-12-31 Cree, Inc. Edge termination structure employing recesses for edge termination elements
US8749015B2 (en) * 2011-11-17 2014-06-10 Avogy, Inc. Method and system for fabricating floating guard rings in GaN materials
US9224828B2 (en) 2011-10-11 2015-12-29 Avogy, Inc. Method and system for floating guard rings in gallium nitride materials
JP6335795B2 (en) * 2012-02-06 2018-05-30 クリー インコーポレイテッドＣｒｅｅ Ｉｎｃ． SiC device with high blocking voltage, terminated by negative bevel
US9064738B2 (en) * 2013-07-19 2015-06-23 Cree, Inc. Methods of forming junction termination extension edge terminations for high power semiconductor devices and related semiconductor devices
US9425265B2 (en) * 2013-08-16 2016-08-23 Cree, Inc. Edge termination technique for high voltage power devices having a negative feature for an improved edge termination structure
CN104616978A (en) * 2014-12-31 2015-05-13 国家电网公司 Silicon-carbide power device terminal structure manufacturing method
CN104637793A (en) * 2014-12-31 2015-05-20 国家电网公司 Manufacturing method of terminal structure of silicon carbide device
DE102015117286B4 (en) 2015-10-09 2018-04-05 Infineon Technologies Ag METHOD FOR PRODUCING A SILICON CARBIDE SEMICONDUCTOR DEVICE BY REMOVING AMORPHISED SECTIONS
CN105428214B (en) * 2015-11-17 2018-07-13 中国工程物理研究院电子工程研究所 A kind of silicon carbide oblique angle mesa etch method
JP6524950B2 (en) * 2016-03-29 2019-06-05 豊田合成株式会社 Semiconductor device and method of manufacturing the same
CN109196415B (en) 2016-04-12 2022-04-01 E-视觉智能光学公司 Electroactive lens with raised resistive bridge
US10599006B2 (en) 2016-04-12 2020-03-24 E-Vision Smart Optics, Inc. Electro-active lenses with raised resistive bridges
JP6857488B2 (en) * 2016-11-29 2021-04-14 株式会社日立製作所 Manufacturing method of semiconductor devices
CN106783957A (en) * 2016-12-27 2017-05-31 西安电子科技大学 Carborundum multi-step groove knot termination extension terminal structure and preparation method thereof
CN108962747A (en) * 2017-05-24 2018-12-07 亚昕科技股份有限公司 Diode manufacturing method with ladder-type structure
DE102017125244B3 (en) 2017-10-27 2019-02-28 Infineon Technologies Ag SEMICONDUCTOR WITH JUNCTION CLOSING ZONE and method of making the same
CN113053999B (en) * 2021-03-12 2023-02-21 深圳方正微电子有限公司 Metal oxide semiconductor transistor and preparation method thereof

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3697829A (en) * 1968-12-30 1972-10-10 Gen Electric Semiconductor devices with improved voltage breakdown characteristics
US4375125A (en) * 1980-03-07 1983-03-01 U.S. Philips Corporation Method of passivating pn-junction in a semiconductor device
DD221598A1 (en) * 1983-12-30 1985-04-24 Adw Ddr Inst Optik PASSIVATION LAYER FOR GAAS-BASED SEMICONDUCTOR COMPONENTS
US4642669A (en) * 1983-12-07 1987-02-10 Bbc Brown, Boveri & Company Limited Semiconductor device having a blocking capability in only one direction
US4667393A (en) * 1984-08-21 1987-05-26 Sgs Microelettronica S.P.A. Method for the manufacture of semiconductor devices with planar junctions having a variable charge concentration and a very high breakdown voltage
US4927772A (en) * 1989-05-30 1990-05-22 General Electric Company Method of making high breakdown voltage semiconductor device
US5449925A (en) * 1994-05-04 1995-09-12 North Carolina State University Voltage breakdown resistant monocrystalline silicon carbide semiconductor devices
WO1995032524A1 (en) * 1994-05-24 1995-11-30 Abb Research Ltd. Semiconductor device in silicon carbide with passivated surface

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE221598C (en) * 1909-03-17
US4211586A (en) * 1977-09-21 1980-07-08 International Business Machines Corporation Method of fabricating multicolor light emitting diode array utilizing stepped graded epitaxial layers
US4242690A (en) * 1978-06-06 1980-12-30 General Electric Company High breakdown voltage semiconductor device
US4947218A (en) * 1987-11-03 1990-08-07 North Carolina State University P-N junction diodes in silicon carbide
US5119148A (en) * 1989-11-29 1992-06-02 Motorola, Inc. Fast damper diode and method
US5973114A (en) * 1992-06-23 1999-10-26 The University Of Virginia Patent Foundation Isolation and characterization of the growth hormone releasing hormone receptor
US5399883A (en) * 1994-05-04 1995-03-21 North Carolina State University At Raleigh High voltage silicon carbide MESFETs and methods of fabricating same
SE9500013D0 (en) * 1995-01-03 1995-01-03 Abb Research Ltd Semiconductor device having a passivation layer
US5814840A (en) * 1995-06-06 1998-09-29 Purdue Research Foundation Incandescent light energy conversion with reduced infrared emission

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3697829A (en) * 1968-12-30 1972-10-10 Gen Electric Semiconductor devices with improved voltage breakdown characteristics
US4375125A (en) * 1980-03-07 1983-03-01 U.S. Philips Corporation Method of passivating pn-junction in a semiconductor device
US4642669A (en) * 1983-12-07 1987-02-10 Bbc Brown, Boveri & Company Limited Semiconductor device having a blocking capability in only one direction
DD221598A1 (en) * 1983-12-30 1985-04-24 Adw Ddr Inst Optik PASSIVATION LAYER FOR GAAS-BASED SEMICONDUCTOR COMPONENTS
US4667393A (en) * 1984-08-21 1987-05-26 Sgs Microelettronica S.P.A. Method for the manufacture of semiconductor devices with planar junctions having a variable charge concentration and a very high breakdown voltage
US4927772A (en) * 1989-05-30 1990-05-22 General Electric Company Method of making high breakdown voltage semiconductor device
US5449925A (en) * 1994-05-04 1995-09-12 North Carolina State University Voltage breakdown resistant monocrystalline silicon carbide semiconductor devices
WO1995032524A1 (en) * 1994-05-24 1995-11-30 Abb Research Ltd. Semiconductor device in silicon carbide with passivated surface

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8901699B2 (en) 2005-05-11 2014-12-02 Cree, Inc. Silicon carbide junction barrier Schottky diodes with suppressed minority carrier injection
US8859366B2 (en) 2005-05-24 2014-10-14 Cree, Inc. Methods of fabricating silicon carbide devices having smooth channels
US9142663B2 (en) 2005-05-24 2015-09-22 Cree, Inc. Silicon carbide devices having smooth channels
US9548374B2 (en) 2006-08-17 2017-01-17 Cree, Inc. High power insulated gate bipolar transistors
US8835987B2 (en) 2007-02-27 2014-09-16 Cree, Inc. Insulated gate bipolar transistors including current suppressing layers
US9117739B2 (en) 2010-03-08 2015-08-25 Cree, Inc. Semiconductor devices with heterojunction barrier regions and methods of fabricating same
US9142662B2 (en) 2011-05-06 2015-09-22 Cree, Inc. Field effect transistor devices with low source resistance

Also Published As

Publication number Publication date
DE69631664D1 (en) 2004-04-01
EP0847598B1 (en) 2004-02-25
US5967795A (en) 1999-10-19
JP2002516027A (en) 2002-05-28
WO1997008754A2 (en) 1997-03-06
US5977605A (en) 1999-11-02
JP4350798B2 (en) 2009-10-21
DE69631664T2 (en) 2004-12-23
EP0847598A2 (en) 1998-06-17

Similar Documents

Publication Publication Date Title
WO1997008754A3 (en) SiC semiconductor device comprising a pn junction with a voltage absorbing edge
WO1998002924A3 (en) Sic semiconductor device comprising a pn junction with a voltage absorbing edge
WO1999000849A3 (en) SiC SEMICONDUCTOR DEVICE COMPRISING A PN-JUNCTION AND A JUNCTION TERMINATION EXTENTION
WO1998002923A3 (en) Depletion region stopper for pn junction in silicon carbide
US6673662B2 (en) Epitaxial edge termination for silicon carbide Schottky devices and methods of fabricating silicon carbide devices incorporating same
SE9700156D0 (en) Junction termination for Si C Schottky diode
EP2261987A3 (en) Guard ring termination for silicon carbide devices
TWI266405B (en) Bi-directional ESD protection devices
FR2738394B1 (en) SILICON CARBIDE SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREOF
JP2004515080A5 (en)
EP0881692A3 (en) Insulated gate semiconductor device and method of manufacturing the same
EP1233456A3 (en) High voltage/high beta semiconductor devices and methods of fabrication thereof
WO2000060670A3 (en) Integrated semiconductor device with one lateral power gate
CA2186796A1 (en) Power Semiconductor Device
SE9500013D0 (en) Semiconductor device having a passivation layer
WO2000065636A3 (en) A bipolar transistor
WO2004095477A3 (en) High-performance electrostatic clamp comprising a resistive layer, micro-grooves, and dielectric layer
RU96119670A (en) Avalanche Photodiode
EP1076364A3 (en) Power semiconductor device
EP0342866A3 (en) Iii-v group compounds semiconductor device schottky contact
JPS5737886A (en) Semiconductor device
KR900701033A (en) Electrostatic Discharge Protection Circuit
JPS55115340A (en) Semiconductor device
SE9601235L (en) Integrated detector
EP0788169A3 (en) High voltage semiconductor device having stable voltage blocking characteristics

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): JP

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): AT BE CH DE DK ES FI FR GB GR IE IT LU MC NL PT SE

DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
121 Ep: the epo has been informed by wipo that ep was designated in this application
WR Later publication of a revised version of an international search report
WWE Wipo information: entry into national phase

Ref document number: 1996929634

Country of ref document: EP

WWP Wipo information: published in national office

Ref document number: 1996929634

Country of ref document: EP

WWG Wipo information: grant in national office

Ref document number: 1996929634

Country of ref document: EP