WO1997005665A1 - Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom - Google Patents
Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom Download PDFInfo
- Publication number
- WO1997005665A1 WO1997005665A1 PCT/US1996/012013 US9612013W WO9705665A1 WO 1997005665 A1 WO1997005665 A1 WO 1997005665A1 US 9612013 W US9612013 W US 9612013W WO 9705665 A1 WO9705665 A1 WO 9705665A1
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- WO
- WIPO (PCT)
- Prior art keywords
- memory
- memory element
- thin
- iayer
- film
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5678—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using amorphous/crystalline phase transition storage elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/828—Current flow limiting means within the switching material region, e.g. constrictions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/841—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/72—Array wherein the access device being a diode
Landscapes
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP96924647A EP0843901B1 (en) | 1995-07-25 | 1996-07-19 | Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom |
CA002227612A CA2227612C (en) | 1995-07-25 | 1996-07-19 | Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom |
AU65046/96A AU6504696A (en) | 1995-07-25 | 1996-07-19 | Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom |
JP50765697A JP4303316B2 (en) | 1995-07-25 | 1996-07-19 | Single cell memory element |
DE69634007T DE69634007T2 (en) | 1995-07-25 | 1996-07-19 | ELECTRICALLY ERASABLE, IMMEDIATELY OVERWRITE MEMORY, MULTIBIT SINGLE CELLS, AND MEMORY MATERIAL MADE THEREFROM |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/506,630 | 1995-07-25 | ||
US08/506,630 US5536947A (en) | 1991-01-18 | 1995-07-25 | Electrically erasable, directly overwritable, multibit single cell memory element and arrays fabricated therefrom |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1997005665A1 true WO1997005665A1 (en) | 1997-02-13 |
Family
ID=24015375
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1996/012013 WO1997005665A1 (en) | 1995-07-25 | 1996-07-19 | Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom |
Country Status (8)
Country | Link |
---|---|
US (1) | US5536947A (en) |
EP (1) | EP0843901B1 (en) |
JP (1) | JP4303316B2 (en) |
KR (1) | KR100379322B1 (en) |
AU (1) | AU6504696A (en) |
CA (1) | CA2227612C (en) |
DE (1) | DE69634007T2 (en) |
WO (1) | WO1997005665A1 (en) |
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US9019777B2 (en) | 2012-08-29 | 2015-04-28 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device and operating method of the same |
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Also Published As
Publication number | Publication date |
---|---|
DE69634007T2 (en) | 2005-12-29 |
JP4303316B2 (en) | 2009-07-29 |
AU6504696A (en) | 1997-02-26 |
DE69634007D1 (en) | 2005-01-13 |
EP0843901A1 (en) | 1998-05-27 |
CA2227612A1 (en) | 1997-02-13 |
MX9800692A (en) | 1998-07-31 |
JPH11510317A (en) | 1999-09-07 |
US5536947A (en) | 1996-07-16 |
KR19990035923A (en) | 1999-05-25 |
EP0843901B1 (en) | 2004-12-08 |
KR100379322B1 (en) | 2003-07-16 |
EP0843901A4 (en) | 1999-10-13 |
CA2227612C (en) | 2006-05-30 |
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