WO1996041687A1 - On-site manufacture of ultra-high-purity hydrofluoric acid for semiconductor processing - Google Patents
On-site manufacture of ultra-high-purity hydrofluoric acid for semiconductor processing Download PDFInfo
- Publication number
- WO1996041687A1 WO1996041687A1 PCT/US1996/009554 US9609554W WO9641687A1 WO 1996041687 A1 WO1996041687 A1 WO 1996041687A1 US 9609554 W US9609554 W US 9609554W WO 9641687 A1 WO9641687 A1 WO 9641687A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- vapor
- gas
- purity
- purifier
- flow
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D15/00—Separating processes involving the treatment of liquids with solid sorbents; Apparatus therefor
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B7/00—Halogens; Halogen acids
- C01B7/19—Fluorine; Hydrogen fluoride
- C01B7/191—Hydrogen fluoride
- C01B7/195—Separation; Purification
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J39/00—Cation exchange; Use of material as cation exchangers; Treatment of material for improving the cation exchange properties
- B01J39/04—Processes using organic exchangers
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B15/00—Peroxides; Peroxyhydrates; Peroxyacids or salts thereof; Superoxides; Ozonides
- C01B15/01—Hydrogen peroxide
- C01B15/013—Separation; Purification; Concentration
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B7/00—Halogens; Halogen acids
- C01B7/19—Fluorine; Hydrogen fluoride
- C01B7/191—Hydrogen fluoride
- C01B7/195—Separation; Purification
- C01B7/197—Separation; Purification by adsorption
- C01B7/198—Separation; Purification by adsorption by solid ion-exchangers
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01C—AMMONIA; CYANOGEN; COMPOUNDS THEREOF
- C01C1/00—Ammonia; Compounds thereof
- C01C1/02—Preparation, purification or separation of ammonia
- C01C1/024—Purification
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01C—AMMONIA; CYANOGEN; COMPOUNDS THEREOF
- C01C1/00—Ammonia; Compounds thereof
- C01C1/16—Halides of ammonium
- C01C1/162—Ammonium fluoride
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU61618/96A AU6161896A (en) | 1995-06-05 | 1996-06-05 | On-site manufacture of ultra-high-purity hydrofluoric acid f or semiconductor processing |
JP8536848A JPH11507001A (en) | 1995-06-05 | 1996-06-05 | On-site production of ultrapure hydrofluoric acid for semiconductor processing |
EP96919223A EP0833705A4 (en) | 1995-06-05 | 1996-06-05 | On-site manufacture of ultra-high-purity hydrofluoric acid for semiconductor processing |
US09/034,004 US6063356A (en) | 1994-01-07 | 1998-03-03 | On-site manufacture of ultra-high-purity hydrofluoric acid for semiconductor processing |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/US1995/007649 WO1996039358A1 (en) | 1995-06-05 | 1995-06-05 | Point-of-use ammonia purification for electronic component manufacture |
USPCT/US95/07649 | 1995-06-05 | ||
US49941495A | 1995-07-07 | 1995-07-07 | |
US08/499,414 | 1995-07-07 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1995/007649 Continuation-In-Part WO1996039358A1 (en) | 1994-01-07 | 1995-06-05 | Point-of-use ammonia purification for electronic component manufacture |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US08/673,909 Continuation-In-Part US5785820A (en) | 1994-01-07 | 1996-07-01 | On-site manufacture of ultra-high-purity hydrofluoric acid for semiconductor processing |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1996041687A1 true WO1996041687A1 (en) | 1996-12-27 |
Family
ID=26789684
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1996/009554 WO1996041687A1 (en) | 1994-01-07 | 1996-06-05 | On-site manufacture of ultra-high-purity hydrofluoric acid for semiconductor processing |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPH11507001A (en) |
KR (1) | KR19990022226A (en) |
CN (1) | CN1190913A (en) |
AU (1) | AU6161896A (en) |
MY (1) | MY132240A (en) |
WO (1) | WO1996041687A1 (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0970744A2 (en) | 1998-07-07 | 2000-01-12 | Air Products And Chemicals, Inc. | Chemical generator with controlled mixing and concentration feedback and adjustment |
WO2001049601A1 (en) * | 1999-12-30 | 2001-07-12 | Honeywell International Inc. | Purification of hydrogen fluoride |
EP1178526A2 (en) * | 2000-07-31 | 2002-02-06 | Mitsubishi Chemical Corporation | Mixed acid solution in etching process, process for producing the same, etching process using the same and process for producing semiconductor device |
US9260306B2 (en) | 2008-11-28 | 2016-02-16 | Kyoto University | Hydrogen fluoride purification method |
US10316469B2 (en) | 2014-12-16 | 2019-06-11 | Ecolab Usa Inc. | On-line control and reaction process for pH adjustment |
CN112010263A (en) * | 2020-08-31 | 2020-12-01 | 北京化工大学 | Production device and production method of electronic-grade hydrofluoric acid |
CN115487522A (en) * | 2022-09-06 | 2022-12-20 | 内蒙古东岳金峰氟化工有限公司 | Hydrogen fluoride purification system and process |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005281048A (en) * | 2004-03-29 | 2005-10-13 | Stella Chemifa Corp | Method and apparatus for refining hydrofluoric acid |
US9216364B2 (en) | 2013-03-15 | 2015-12-22 | Air Products And Chemicals, Inc. | Onsite ultra high purity chemicals or gas purification |
CN114195099B (en) * | 2021-12-16 | 2023-04-28 | 浙江博瑞电子科技有限公司 | Method for preparing electronic grade hydrogen fluoride and electronic grade hydrofluoric acid by in-situ arsenic removal of multichannel microreactor |
Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4756899A (en) * | 1987-02-12 | 1988-07-12 | Allied-Signal Inc. | Manufacture of high purity low arsenic anhydrous hydrogen fluoride |
US4828660A (en) * | 1986-10-06 | 1989-05-09 | Athens Corporation | Method and apparatus for the continuous on-site chemical reprocessing of ultrapure liquids |
US4929435A (en) * | 1987-02-12 | 1990-05-29 | Allied-Signal Inc. | Manufacture of high purity low arsenic anhydrous hydrogen fluoride |
US4952386A (en) * | 1988-05-20 | 1990-08-28 | Athens Corporation | Method and apparatus for purifying hydrogen fluoride |
US4980032A (en) * | 1988-08-12 | 1990-12-25 | Alameda Instruments, Inc. | Distillation method and apparatus for reprocessing sulfuric acid |
US5164049A (en) * | 1986-10-06 | 1992-11-17 | Athens Corporation | Method for making ultrapure sulfuric acid |
US5288333A (en) * | 1989-05-06 | 1994-02-22 | Dainippon Screen Mfg. Co., Ltd. | Wafer cleaning method and apparatus therefore |
US5346557A (en) * | 1991-10-29 | 1994-09-13 | Hi-Silicon, Co., Ltd. | Process for cleaning silicon mass and the recovery of nitric acid |
US5362469A (en) * | 1991-10-31 | 1994-11-08 | Solvay Fluor Und Derivate Gmbh | Preparation of ultrapure hydrogen fluoride |
US5496778A (en) * | 1994-01-07 | 1996-03-05 | Startec Ventures, Inc. | Point-of-use ammonia purification for electronic component manufacture |
US5500098A (en) * | 1993-08-05 | 1996-03-19 | Eco-Tec Limited | Process for regeneration of volatile acids |
-
1996
- 1996-06-05 WO PCT/US1996/009554 patent/WO1996041687A1/en not_active Application Discontinuation
- 1996-06-05 CN CN96194483A patent/CN1190913A/en active Pending
- 1996-06-05 AU AU61618/96A patent/AU6161896A/en not_active Abandoned
- 1996-06-05 KR KR1019970708705A patent/KR19990022226A/en not_active Application Discontinuation
- 1996-06-05 JP JP8536848A patent/JPH11507001A/en active Pending
- 1996-06-05 MY MYPI96002210A patent/MY132240A/en unknown
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4828660A (en) * | 1986-10-06 | 1989-05-09 | Athens Corporation | Method and apparatus for the continuous on-site chemical reprocessing of ultrapure liquids |
US5164049A (en) * | 1986-10-06 | 1992-11-17 | Athens Corporation | Method for making ultrapure sulfuric acid |
US4756899A (en) * | 1987-02-12 | 1988-07-12 | Allied-Signal Inc. | Manufacture of high purity low arsenic anhydrous hydrogen fluoride |
US4929435A (en) * | 1987-02-12 | 1990-05-29 | Allied-Signal Inc. | Manufacture of high purity low arsenic anhydrous hydrogen fluoride |
US4952386A (en) * | 1988-05-20 | 1990-08-28 | Athens Corporation | Method and apparatus for purifying hydrogen fluoride |
US4980032A (en) * | 1988-08-12 | 1990-12-25 | Alameda Instruments, Inc. | Distillation method and apparatus for reprocessing sulfuric acid |
US5288333A (en) * | 1989-05-06 | 1994-02-22 | Dainippon Screen Mfg. Co., Ltd. | Wafer cleaning method and apparatus therefore |
US5346557A (en) * | 1991-10-29 | 1994-09-13 | Hi-Silicon, Co., Ltd. | Process for cleaning silicon mass and the recovery of nitric acid |
US5362469A (en) * | 1991-10-31 | 1994-11-08 | Solvay Fluor Und Derivate Gmbh | Preparation of ultrapure hydrogen fluoride |
US5500098A (en) * | 1993-08-05 | 1996-03-19 | Eco-Tec Limited | Process for regeneration of volatile acids |
US5496778A (en) * | 1994-01-07 | 1996-03-05 | Startec Ventures, Inc. | Point-of-use ammonia purification for electronic component manufacture |
Non-Patent Citations (1)
Title |
---|
See also references of EP0833705A4 * |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0970744A2 (en) | 1998-07-07 | 2000-01-12 | Air Products And Chemicals, Inc. | Chemical generator with controlled mixing and concentration feedback and adjustment |
US6224252B1 (en) | 1998-07-07 | 2001-05-01 | Air Products And Chemicals, Inc. | Chemical generator with controlled mixing and concentration feedback and adjustment |
WO2001049601A1 (en) * | 1999-12-30 | 2001-07-12 | Honeywell International Inc. | Purification of hydrogen fluoride |
EP1178526A2 (en) * | 2000-07-31 | 2002-02-06 | Mitsubishi Chemical Corporation | Mixed acid solution in etching process, process for producing the same, etching process using the same and process for producing semiconductor device |
EP1178526A3 (en) * | 2000-07-31 | 2004-03-03 | Mitsubishi Chemical Corporation | Mixed acid solution in etching process, process for producing the same, etching process using the same and process for producing semiconductor device |
US9260306B2 (en) | 2008-11-28 | 2016-02-16 | Kyoto University | Hydrogen fluoride purification method |
US10316469B2 (en) | 2014-12-16 | 2019-06-11 | Ecolab Usa Inc. | On-line control and reaction process for pH adjustment |
CN112010263A (en) * | 2020-08-31 | 2020-12-01 | 北京化工大学 | Production device and production method of electronic-grade hydrofluoric acid |
CN115487522A (en) * | 2022-09-06 | 2022-12-20 | 内蒙古东岳金峰氟化工有限公司 | Hydrogen fluoride purification system and process |
Also Published As
Publication number | Publication date |
---|---|
JPH11507001A (en) | 1999-06-22 |
KR19990022226A (en) | 1999-03-25 |
MY132240A (en) | 2007-09-28 |
CN1190913A (en) | 1998-08-19 |
AU6161896A (en) | 1997-01-09 |
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