WO1996039547A2 - Multiple source deposition of shape-memory alloy thin films - Google Patents
Multiple source deposition of shape-memory alloy thin films Download PDFInfo
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- WO1996039547A2 WO1996039547A2 PCT/IB1996/000766 IB9600766W WO9639547A2 WO 1996039547 A2 WO1996039547 A2 WO 1996039547A2 IB 9600766 W IB9600766 W IB 9600766W WO 9639547 A2 WO9639547 A2 WO 9639547A2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H61/00—Electrothermal relays
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- A61B34/00—Computer-aided surgery; Manipulators or robots specially adapted for use in surgery
- A61B34/70—Manipulators specially adapted for use in surgery
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- F03G—SPRING, WEIGHT, INERTIA OR LIKE MOTORS; MECHANICAL-POWER PRODUCING DEVICES OR MECHANISMS, NOT OTHERWISE PROVIDED FOR OR USING ENERGY SOURCES NOT OTHERWISE PROVIDED FOR
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- F03G7/06—Mechanical-power-producing mechanisms, not otherwise provided for or using energy sources not otherwise provided for using expansion or contraction of bodies due to heating, cooling, moistening, drying or the like
- F03G7/065—Mechanical-power-producing mechanisms, not otherwise provided for or using energy sources not otherwise provided for using expansion or contraction of bodies due to heating, cooling, moistening, drying or the like using a shape memory element
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Abstract
A method for simultaneously and controllably depositing multiple metals to create thin film alloys that have unique physical properties. In particular, the method involves the deposition of multiple alloy thin films with shape-memory effects, such as Ni-Ti-Cu. The Ni-Ti-Cu films were mixed-sputter deposited onto heated silicon substrates from individually powered Ni, Ti, and Cu targets, providing increased flexibility in film stoichiometry, and thus allowing for optimization of the shape-memory properties. The multiple metal films have particular application for micro actuators, such that actuation can be performed on miniature/micro devices with dimensions as small as 5νm x 5νm x 2νm, and can effectively operate in 250νm diameter areas. One application is for actuation of catheter/endoscopic-based medical devices for minimally-invasive surgical or therapeutic procedures. Another application is for use in miniaturized valves and pumps, or for cleaning of miniature pipes.
Description
MULTTPLE SOURCE DEPOSITION OF SHAPE-MEMORY ALLOY THIN FILMS The United States Government has rights in this invention pursuant to Contract No. W-7405-ENG-48 between the United States Department of Energy and the University of California for the operation of Lawrence Livermore National Laboratory.
BACKGROUND OF THE INVENTION The present invention relates to the deposition of thin films, particularly to a method for the deposition of multiple metals to create thin film alloys, and more particularly to a method for simultaneously and controllably depositing multiple alloy thin films from separate source targets to produce shape-memory alloy thin films, composed of Ni-Ti-Cu, for example.
Shape-memory alloys (SMA), named for their ability to recover large plastic deformation upon heating, are known in the art and a summary of the current state of SMA materials for practical application are set forth in an article entitled "The Present State Of Shape Memory Materials And Barriers Still To Be Overcome", J. Van Humbeeck et al., Proceedings of the First International Conference on Shape Memory and Superelastic Technologies, Asilomar Conference Center, Pacific Grove, CA, 1994. Shape-memory alloy films also show high potential for use in micro-actuator applications, as exemplified by U.S. Patent No. 5,061,914 issued October 29, 1991 to J. D. Busch et al. In addition, shape-memory alloy (SMA) films have recently been utilized to actuate micro-actuators for medical applications, such as retaining/releasing mechanism located at one end of a catheter tube and remotely actuated via the opposite end of the catheter tube. Such micro-actuators, which can operate in a 250μm opening are described and claimed in copending U.S. Application Serial No. 08/(IL-9193), filed May 22, 1995, entitled "Microfabricated Therapeutic Actuator Mechanisms", and assigned to the same assignee. In addition to medical applications, SMA films are being considered in
the growing field of micro-electromechanical systems, which require repeatable actuation or movement, such as miniaturized valves and pumps, disk drive arms, tools for cleaning out miniature pipes, and miniature tools in general. Several investigations into the properties of nickel/titanium (NiTi) alloy films, for use as shape-memory alloy films, have been conducted, all of which used sputter deposition or laser ablation of a single NiTi (alloy) target, with the intention of attaining films with the same composition and properties as the well characterized bulk target material. Although these prior techniques produced relatively uniform shape-memory films relatively quickly, they allowed for little flexibility in terms of stoichiometry (compositional control), which is well known to have a very strong influence on the resulting shape-memory alloy behavior. For example, increasing to atomic percentage of nickel by 1% from an equi-atomic ratio of NiTi lowers the maternsitic start temperature, Ms, from 50°C to -100°C. Furthermore, the composition for optimum shape-memory properties in a film may vary from that of bulk alloys due to the small grain sizes, surface effects, and plane stress conditions associated with films. Previous efforts have been directed to Ni-Ti-Cu films for SMA application, using multi-layers sputtered by alternating between Ni45Ti5oCu5 targets and pure titanium targets to compensate for titanium loss due to preferential sputtering of the alloy target. See L. Chang et al., Scripta Met., 25, 2079 (1991); L. Chang et al, Mat. Res. Soc. Symp. Proc, 187, 137 (1990); and L. Chang et al., Mat. Res. Soc. Symp. Proc, 246, 141 (1992). While these approaches increases compositional flexibility, it may lead to local inhomogeneities in the form of Ti2Ni or Ti4Ni2θx precipitates which were observed both in the grain interiors and at the boundaries after a one hour anneal at 650°C. A similar investigation of producing films of NiTi by ion beam enhanced deposition (IBED) techniques for controlling residual stresses in Ni-Ti films, have been carried out. See B. Walles et al., Mat. Res. Soc. Symp. Proc, 246, 349 (1992). Thus, a need has existed for a method of fabricating SMA films which allows for compositional control.
The present invention fills this need by providing a method for the deposition of SMA films which allows compositional control. The method of the present invention simultaneously (mixed- sputter) and controllably deposits multiple (three or more) metals, such
as nickel-titanium-copper, to create shape-memory alloy (SMA) thin films. The mixed sputter deposition provides compositional control, making it possible to optimize the SMA properties.
SUMMARY OF THE INVENTION An object of the present invention is to provide a method for controUably depositing multiple metals.
A further object of the invention is directed to multiple source deposition of shape-memory alloy thin films for micro-actuator applications.
A further object of the invention is to provide a method for simultaneously and controUably depositing multiple metals to create thin film alloys that have unique physical properties.
Another object of the invention is to provide a mixed- sputter deposition technique which provides for compositional control, making it possible to optimize properties of the thus deposited metals. Another object of the invention is to provide a multiple metal deposition technique, wherein one of the metals is copper.
Another object of the invention is to provide a method for producing shape-memory alloy films using multiple source targets.
Another object of the invention is to provide a method for producing multiple metal shape-memory alloy films.
Another object of the invention is to provide a method for controUably depositing Ni-Ti-Cu films on a substrate from individual Ni, Ti, and Cu targets, thereby providing increased flexibility in film stoichiometry, and allowing for optimization of the shape-memory properties of the thus deposited film.
Other objects and advantages of the present invention will become apparent from the following description and accompanying drawings.
A thermally induced crystalline phase change from a ductile martensite to a high strength austenite is responsible for the shape-memory effect exhibited by the prior NiTi alloy. Substitution of between 5 and 15 atomic percentage (at %) Cu for Ni in the normally equi-atomic Ni-Ti system is known to stabilize the shape memory effect in bulk alloys, significantly reducing the extreme sensitivity of the transformation temperature to slight changes in composition. Copper also serves to decrease the shape-memory hysteresis width and lower the
martensitic yield strength, allowing for faster switching times and lower resetting forces in shape-memory actuators.
Basically, the present invention involves multiple source deposition of shape-memory alloy thin films for micro-actuator applications, for example. The present invention utilizes a mixed- sputter (simultaneous) and controllable deposition of multiple metals, such as Ni, Ti, and Cu, thereby providing increased flexibility in film stoichiometry, and allowing for optimization of the shape-memory properties of the thus deposited metals. The controlled deposition of Ni- Ti-Cu shape-memory films is carried out using individual Ni, Ti, and Cu targets. The application of shape-memory alloy thin films for micro- actuators, for example, is such that actuation can be performed on miniature/micro devices with dimensions as small as 5μm, 5μm and 2μm. One particular application is for actuation of catheter/endoscopic- based medical devices for minimally-invasive surgical or therapeutic procedures. Another application is for use in micro tools (medical or other) and devices that require repeatable actuation or movement, such as miniaturized valves and pumps, etc
BRIEF DESCRIPTION OF THE DRAWINGS
The accompanying drawings, which are incorporated into and form a part of the disclosure, illustrate an embodiment of a micro- actuator using the shape-memory alloy film made in accordance with the invention and test results thereof and, together with the description, serve to explain the principles of the invention.
Figure 1 is a three-dimensional schematic view of a micro gripper utilizing Ni-Ti-Cu SMA thin film to actuate the silicon cantilevers.
Figure 2 is a graph showing tensile stress vs. temperature for SMA films with slightly different composition, all deposited onto the same substrate. Figure 3 is a graph showing transformation temperatures vs. at.% Ti for Ni-Ti-Cu films with 7 at.% Cu.
Figure 4 illustrates a dc magnetron sputtering arrangement utilizing three individual sputter targets for simultaneously depositing Ni, Ti, and Cu on a silicon substrate.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention involves a method of producing shape-memory alloy (SMA) thin films via a mixed sputtering technique which allows the control necessary to create useful SMA films. The simultaneous or mixed sputtering technique uses individual target sources for each metal, thereby providing compositional control, making it possible to optimize shape-memory properties of the films. Sputtering from a single target does not allow for compositional control. In particular, the method of this invention is concerned with the deposition of multiple (three) metal alloy thin films, with shape- memory effects, such as nickel-titanium-copper (Ni-Ti-Cu). The simultaneously (mixed-sputter) Ni-Ti-Cu films deposited onto heated silicon substrates from individually powered Ni, Ti, and Cu targets, provided increased flexibility in film stoichiometry, and allowed for optimization of the shape-memory properties. For example, Ni-Ti-Cu shape-memory alloy films have been mixed-sputter deposited from separate nickel, titanium, and copper targets, providing increased compositional flexibility. Shape-memory characteristics, examined for films with 7 atomic percent (at.%) Cu and 41-51 at % Ti, were determined with temperature controlled substrate curvature measurements, and microstructure were studied with transmission electron microscopy. The Ni-Ti-Cu films were found to have shape-memory properties comparable to bulk materials, with transformation temperature between 20°C and 62°C, a 10-13°C hysteresis, and up to 330 MPa recoverable stress. The addition of copper to the Ni-Ti system, as pointed out above, is known to stabilize the shape-memory effect of bulk alloys, significantly reducing the sensitivity of the transformation temperature to slight changes in stoichiometry. Furthermore, copper serves to decrease the shape-memory hysteresis width and lower the martensitic yield stress, allowing for faster switching times and lower resetting forces in shape-memory actuators. The initial experimental verification results show that the mixed-sputter deposited Ni-Ti-Cu films have shape- memory properties comparable to bulk alloys. The amount of recoverable residual stress in the films (similar to the stress generated in constrained recovery), characterized with substrate curvature measurements, was found to be as high as about 400 MPa.
This is illustrated in Figure 2, showing stress vs. temperature for five (5) films with 7 atomic percent (at.%) Cu and slightly different atomic percent compositions of Ni and Ti, all deposited on the same wafer or substrate. The films illustrated in Figure 2 are composed by atomic (at.) percent of Ni49Ti44Cu7, Ni52Ti4i -
Cu7,Ni43Ti5oCu7, Ni 2Ti5iCu7, 2nd cycle, and Ni42TisιCu7, 28th cycle. Of these films Ni42Ti5iCu7 is the best composition for shape-memory applications. The N-42Ti5iCu7 film response did not degrade after 25 additional thermal cycles. The curvature measurement technique used in tests shown in Figure 2 is a known technique which measures the curvature of the substrate as a function of temperature. It was found that stress in the film is proportional to the inverse of the curvature. Characterization of the shape-memory effect was obtained by dicing 4 inch silicon wafers into 20 x 20 mm squares, and curvature measurements were made using a Tencor FLX-2320 laser system on the individual dies over the temperature range of 24 to 100°C, ramping at 2°C/minute and scanning 25 mm along the diagonal of the die. Thermal cycling was performed by placing the die in a furnace at 100°C for 1.5 minutes, then cooling to room temperature with a fan.
Film stress, σf which is inversely proportional to the substrate radius curvature, r, was calculated from wafer curvature using the Stoney equation, modified for the bi-axial stress state:
where E is the Young's modulus, U(nu) is the Poisson's ratio, t is thickness, and the subscripts s and f refer to substate and film, respectively. For {100} - oriented silicon, the bi-axial modulus E/(l-U) is transversely isotropic, ensuring spherical deformation of the substrate. The wafer curvature before film deposition, measured with an interference microscope, was found to correspond to a stress of less than 10 MPa for a one μm thick film. Based on this result, curvature of the individual dies was assumed to be due to stress in the film only.
While the curvature technique is commonly used to measure residual stress in thin films, it was applied here for the first time to analyze the shape-memory effect in SMA films.
As pointed out above, copper serves to decrease the shape- memory hysteresis width and lower the martensitic yield stress, allowing for faster switching times and lower resetting forces in shape-memory actuators. Also, transformation temperatures are less sensitive to composition when copper is added to the Ni-Ti alloy.
Figure 3 shows the transformation temperatures for Ni-Ti- Cu films with 7 at.% Cu and with the Ti from 47-51 at.%, the remainder being Ni: where Ms = martensite start temperature (temperature at which, when cooling, austenite begins to transform to martensite); Mf = martensite finish temperature; As = austenite start temperature (temperature at which, when heating, martensite begins to transform to austenite); and Af = austenite finish temperature. As shown in Figure 3, with an at.% Ti of 51 the shape-memory hysteresis for a film section 1 μm thick is 10°C with Ms = 53°C, Mf = 36°C, As = 47°C, and Af = 62°C. Note from Figure 3 that the hysteresis is about 10°C at 47 and 51 at.% Ti, and is slightly (12-13°C) higher at 48-50 at.% Ti with 7 at.% Cu. Test also showed that with film sections with 41 and 44 at.% Ti, no shape-memory behavior occured between 24-100°C. Also, recoverable stress, o"reo of Ni- Ti-Cu films shown in Figure 3 was 330 MPa, 210 MPa, 310 MPa, and 295 MPa for at.% Ti of 51, 50, 48, and 47. Thermal cycling was found to have little effect on the shape-memory characteristics, with a 42 at.% Ni, 51 at.% Ti, and 7 at.% Cu, for example, showing no degradation after over 50 thermal cycles. With transformation temperatures just above body temperature, the Ni-Ti-Cu films are ideally suited for medical applications.
The application of these films are for micro actuators, such that actuation can be performed on miniature /micro devices with dimensions as small as 5μm x 5μm x 2μm. One particular application, such as the micro gripper illustrated in Figure 1, is for actuation of catheter/endoscopic-based medical devices for minimally-invasive surgical or therapeutic procedures. In addition shape-memory Ni-Ti-Cu films would be useful in micro tools (medical or other) and devices that require actuation mechanisms, particularly devices that require repeatable actuation or movement. Such devices include miniaturized
valves and pumps, medical devices, disk drive arms, tools for cleaning out miniature pipes, and miniature tools in general.
Figure 1 illustrates a practical micro gripper with fine alignment, eutectic bonding and SMA actuation, and which has a large gripping force, a relatively rigid structural body, and flexibility in functional design. The actuation is generated by Ni-Ti-Cu shape memory alloy thin films made in accordance with the present invention. The stress induced by the SMA thin films can deflect each side (cantilever) of the micro gripper up to 55μm for a total gripping motion of llOμm. This opening motion corresponds to a 20mN opening force on the tip of the micro gripper. By the use of the SMA thin film of the present invention, the micro gripper can be locally actuated at low temperatures (<100°C), and can generate actuation stresses up to 500MPa at transformation temperatures between 30°C to 70°C The micro gripper as illustrated in Figure 1, indicated generally at 10, is a silicon structure composed for a pair of silicon members 11 and 12 secured together at a eutectic bonded interface 13. The silicon members 11 and 12 are constructed to define a hollow channel 14 therebetween, at one end thereof and constructed to define a cantilevers or gripper arms 15 and 16 at the other end thereof. The cantilevers 15 and 16 are each provided with gripping jaws or members 17 and 18 at the outer ends and a pushing pad 19 and 20 intermediate the hollow channel 14 and the gripping jaws 17-18. SMA thin films 21 and 22, composed of Ni-Ti-Cu, for example, are deposited on the outer surface of each of member 11 and 12 and the films 21 and 22 extend along the full length and width of the cantilevers 15 and 16. By way of example, the micro gripper 10 is 1000 x 200 x 380μm3 in dimension, with each silicon cantilever 15 and 16 being 12.5μm thick and the Ni-Ti-Cu SMA thin films 21 and 22 being 5μm thick. The pushing pads 19 and 20 are designed to assist in releasing the gripped object by pushing forward as the gripper arms or cantilevers 15 and 16 are opened. The pushing pads 19 and 20 are each 30μm wide, while the gripping jaws 17 and 18 are 60 x 110 x 100μm3, with the hollow channel 14 being llOμm wide. The gripping jaws, pushing pads, and hollow channel are shaped by a combination of precision sawing and bulk micro-machining of silicon. The SMA thin films are deposited by simultaneous (mixed) sputtering
using individual Ni, Ti, and Cu targets in accordance with the present invention.
The following are examples of deposition process operational sequences for producing SMA films having a thickness ranging from very thin (lOOOA) to lOμm from individual Ni, Ti, and Cu sputter targets: Deposition Process I:
1. A silicon substrate is loaded into a vacuum processing chamber and pumped down to a base pressure of 0.5 x 10"8 Torr. 2. The substrate is heated to 500°C by radiatively heating the substrate holder from behind with a resistive ceramic heater.
3. Argon sputtering gas is introduced into the vacuum chamber, at a flow rate of 25 seem, raising the pressure to 8 m Torr.
4. After letting the argon gas flow for 20 minutes for stabilization and to ensure no oxygen is present, three magnetron sputtering sources are turned on with the following power ratios: 200W Ti, 70W Ni, and 10W Cu. Special "mini" sources developed by Makowiecki and Ramsey are used to provide the mixed sputtering deposition because they can be placed very close to each other, thus improving uniformity. Dimensions are set forth hereinafter with respect to Figure 4.
5. Depositing for 30 minutes results in a film of approximately 1 micron in thickness.
6. To further improve uniformity, the substrate can be rotated.
Deposition Process II:
This procedure is the same as Deposition Process I, except the substrate is not heated during deposition, or the substrate is heated to a temperataure less than 400°C. Instead, after the deposition is complete, but before exposing the film to atmosphere, the substrate is heated to a temperature of approximately 500°C in order to crystallize the amorphous or partially crystalline film. It is important not to expose the amorphous film to oxygen, as this inhibits the shape-memory effect. Figure 4 illustrates a close-packed (mini) dc magnetron sputtering set-up, generally indicated at 25 for carrying out the above- described mixed-sputter (simultaneous) deposition processes, and which includes a 4 inch silicon (Si) wafer or substrate 26, mounted to a substrate
heater 27, a water cooled copper block 28 is provided with a three (3) targets 29 (Ni), 30 (Ti), and 31 (Cu) dc magnetron sputtering sources 32, 33 and 34, respectively. The targets 29-31 have a diameter of 1.3 inches as indicated by arrow 35 and the center of each target, indicated at 36 is located a distance of 0.9 inch, see arrow 37 from a center line 38 of copper block 28, with the targets 29-31 spaced four (4) inches from the substrate 26 as indicated by arrow 39.
While the Ni-Ti-Cu SMA film has been experimentally verified, other film compositions have been shown in bulk form to increase the transformation temperature of shape-memory alloys, these include nickel-titanium-platinum (Ni-Ti-Pt), nickel-titanium-palladium (Ni-Ti-Pd), nickel-titanium-zirconium (Ni-Ti-Zr), and nickel-titanium- hafnium (Ni-Ti-Hf), and thin films of these materials are to be developed. Other 3-element alloys, such as nickel-titanium-iron (Ni-Ti- Fe), copper-zinc-aluminum (Cu-Zn-Al), zirconium-palladium- ruthenium (Zr-Pd-Ru), and nickel-aluminum-iron (Ni-Al-Fe) also exhibit the shape-memory effect. Also, some four (4)-element alloys exhibit the shape-memory effect. These include Ni-Ti-Hf-Cu, Ni-Ti-Pt- Cu, Ni-Ti-Hf-Pt, and Ni-Ti-Hf-Pd. It is possible to produce highly optimized 4-element alloys using the multiple-source (four target) sputtering process, although actual composition testing thereof has not been carried out.
While the Ni-Ti-Cu SMA material has been described as a film deposited on a member or substrate, it can be formed as a free- standing foil by removal of the substrate after deposition thereof, provided the deposited SMA material is of sufficient thickness. A thin film or coating is typically of a thickness of not greater than 5-10 μm deposited on a substrate or member while a foil may be in the form of a sheet (free-standing) which is usually not thicker than 0.15mm. It has also been discovered that the use of SMA material can reduce residual stress in thin films of various materials deposited thereon, which has been a critical problem in the formation of thin films. By depositing a film of SMA, then depositing the film of interest on the SMA, the residual stress in the film of interest is substantally reduced because the SMA film is easily deformed. This has been experimentally verified by comparison tests. For example, a 2 μm film of iron was deposited on silicon, and tests showed that the iron had a
residual stress of 900 MPa. However, by depositing a 1.3 μm Ni-Ti-Cu on the silicon and then depositing a 1.6 μm iron film, tests showed a residual stress of only 400 MPa.
It has thus been shown that the present invention provides a multiple metal shape-memory alloy thin film and deposition method for fabricating same. The deposition method involves mixed or simultaneous sputtering from individual metal targets, whereby compositional control is provided, thereby providing increased flexibility in film stoichiometry, and allowing for optimization of shape-memory properties. By the use of the mixed sputtering technique, SMA films can be produced for a large number of applications, not previously available, due to the compositional control capability.
While particular embodiments, operational sequence, materials, parameters, etc. have been set forth to exemplify and explain the principles of the invention, such are not intended to be limiting. Modifications and changes may become apparent to those skilled in the art, and it is intended that the invention be limited only by the scope of the appended claims.
Claims
CLAIMS: 1. A method for fabricating multiple metal shape-memory alloy films, including: simultaneously depositing multiple metals by sputtering from individually powered metal targets.
2. The method of Claim 1, additionally including forming the individually powered targets from a metal selected from the group consisting of nickel, titanium, copper, platinum, zirconium, hafnium, iron, aluminum, zinc, palladium and ruthenium..
3. The method of Claim 2, wherein each of the individually powered targets are constructed to be composed essentially of nickel, titanium, and copper.
4. The method of Claim 2, wherein the multiple metals are simultaneously deposited to a thickness of 1000A to lOμm.
5. The method of Claim 1, wherein the sputtering is carried out from sputtering techniques selected from the group consisting of rf magnetron sputtering, and dc magnetron sputtering.
6. A multiple metal shape-memory alloy material formed by simultaneous deposition from multiple individual metal targets.
7. The multiple metal shape-memory alloy material of Claim 6, wherein said multiple individual metal targets are composed of three-element alloys which exhibit shape-memory effect and of metals selected from the group consisting of nickel, titanium, copper, platinum, iron, zirconium, hafnium, aluminum, zinc, palladium, and ruthenium.
8. The multiple metal shape-memory alloy material of Claim 7, wherein said targets are nickel, titanium, and copper.
9. The multiple metal shape-memory alloy material of
Claim 6, wherein said film is composed of nickel, titanium, and copper.
10. The multiple metal shape-memory alloy material of Claim 9, having a thickness of lOOOA to lOμm.
11. The multiple metal shape-memory alloy material of Claim 7, wherein said individual metal targets may be selected from the group consisting of 3-element targets and 4-element targets.
12. The multiple metal shape-memory alloy material of Claim 11, wherein said film is composed of four elements selected from the group consisting of Ni-Ti-Hf-Cu, Ni-Ti-Pt-Cu, Ni-Ti-Hf-Pt, and Ni- Ti-Hf-Pd.
13. In a micro tool having movable cantilevers and an SMA thin film on each cantilever for actuation thereof, the improvement comprising said SMA thin film being composed of multiple metals deposited by mixed sputter deposition. -
14. The improvement of Claim 13, wherein said multiple metals are selected from a three-element group consisting of nickel- titanium-copper, nickel-titanium-platinum, nickel-titanium-palladium, nickel-titanium-zirconium, nickel-titanium-hafnium, and nickel- titanium-iron.
15. The improvement of Claim 14, wherein said multiple metals are nickel, titanium, and copper.
16. The improvement of Claim 13, wherein said multiple metals are deposited by mixed sputter deposition using individual targets of each of said metals.
17. The improvement of Claim 13, wherein said SMA thin film has a thickness of lOOOA to lOμm.
18. The micro tool of Claim 13, wherein said movable cantilevers are provided with gripping members at the outer ends thereof.
19. The micro tool of Claim 18, wherein said movable cantilevers are additionally provided with pushing pads.
20. The micro tool of Claim 19, wherein said movable cantilevers are constructed of silicon.
21. The improvement of Claim 13, wherein said multiple metals are selected from a four-element group consisting of Ni-Ti-Hf-Cu, Ni-Ti-Pt-Cu, Ni-Ti-Hf-Pt, and Ni-Ti-Hf-Pd.
22. The method of Claim 2, wherein at least two of the metal targets include nickel and titanium.
23. The multiple metal shape-memory alloy film of Claim 7, wherein the three-element alloys are selected from the group consisting of Ni-Ti-Cu, Ni-Ti-Pt, Ni-Ti-Pd, Ni-Ti-Zr, Ni-Ti-Hf, Ni-Ti-Fe, Cu-Zn-Al, Zr-Pd-Ru, and Ni-Al-Fe.
24. The multiple metal shape-memory alloy material of Claim 6, deposited in the form of a film or in the form of a free-standing foil.
25. The method of Claim 1, additionally including depositing a film of interest on the film of metal shape-memory alloy, whereby the residual stress in the film or interest is reduced.
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| US45805195A | 1995-06-01 | 1995-06-01 | |
| US08/458,051 | 1995-06-01 |
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| WO1996039547A2 true WO1996039547A2 (en) | 1996-12-12 |
| WO1996039547A3 WO1996039547A3 (en) | 1997-02-20 |
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| PCT/IB1996/000766 WO1996039547A2 (en) | 1995-06-01 | 1996-05-29 | Multiple source deposition of shape-memory alloy thin films |
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| WO2001021851A1 (en) * | 1999-09-22 | 2001-03-29 | Delphi Technologies, Inc. | Production of ternary shape-memory alloy films by sputtering |
| EP1239151A1 (en) * | 2001-03-05 | 2002-09-11 | Abb Research Ltd. | Actuator |
| US6454913B1 (en) | 2001-07-12 | 2002-09-24 | Delphi Technologies, Inc. | Process for deposition of sputtered shape memory alloy films |
| US6592724B1 (en) | 1999-09-22 | 2003-07-15 | Delphi Technologies, Inc. | Method for producing NiTiHf alloy films by sputtering |
| WO2004092581A1 (en) * | 2003-04-15 | 2004-10-28 | Board Of Trustees Operating Michigan State University | Prestrained thin-film shape memory actuator using polymeric substrates |
| WO2004113723A1 (en) * | 2003-04-09 | 2004-12-29 | Medtronic, Inc. | Shape memory alloy actuators |
| CN103160707A (en) * | 2011-12-13 | 2013-06-19 | 西安赛特金属材料开发有限公司 | Titanium-nickel-based shape memory alloy material used for fire-fighting automatic temperature control element |
| JP2015509134A (en) * | 2011-10-28 | 2015-03-26 | 韓国機械材料技術院 | Titanium-nickel alloy thin film and method for producing titanium-nickel alloy thin film using co-sputtering method |
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