WO1996025767A3 - Phonon resonator and method for its production - Google Patents

Phonon resonator and method for its production Download PDF

Info

Publication number
WO1996025767A3
WO1996025767A3 PCT/US1996/002052 US9602052W WO9625767A3 WO 1996025767 A3 WO1996025767 A3 WO 1996025767A3 US 9602052 W US9602052 W US 9602052W WO 9625767 A3 WO9625767 A3 WO 9625767A3
Authority
WO
WIPO (PCT)
Prior art keywords
phonon
phonons
phonon resonator
resonator
production
Prior art date
Application number
PCT/US1996/002052
Other languages
French (fr)
Other versions
WO1996025767A2 (en
Inventor
Thomas G Brown
Original Assignee
Painter B A Iii
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Painter B A Iii filed Critical Painter B A Iii
Priority to AT96908469T priority Critical patent/ATE252276T1/en
Priority to DE69630387T priority patent/DE69630387T2/en
Priority to JP52513796A priority patent/JP3974654B2/en
Priority to EP96908469A priority patent/EP0838093B1/en
Priority to AU51700/96A priority patent/AU5170096A/en
Publication of WO1996025767A2 publication Critical patent/WO1996025767A2/en
Publication of WO1996025767A3 publication Critical patent/WO1996025767A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06203—Transistor-type lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/3027—IV compounds
    • H01S5/3031—Si
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3223—IV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3223—IV compounds
    • H01S5/3224—Si
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30

Abstract

A structure of periodically varying density is provided, that acts as a phonon resonator for phonons capable of participating in phonon-electron interactions. Specifically, a phonon resonator that is resonant for phonons of appropriate momentum to participate in indirect radiative transitions and/or inter zone intervalley scattering events is provided. Preferably, the structure is an isotope superlattice, most preferably of silicon. The structure of the present invention has improved optical, electrical, and/or heat transfer properties. A method of preparing the structure of the present invention is also provided.
PCT/US1996/002052 1995-02-17 1996-02-14 Phonon resonator and method for its production WO1996025767A2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
AT96908469T ATE252276T1 (en) 1995-02-17 1996-02-14 PHONON RESONATOR
DE69630387T DE69630387T2 (en) 1995-02-17 1996-02-14 phonon
JP52513796A JP3974654B2 (en) 1995-02-17 1996-02-14 Phonon resonance device and manufacturing method thereof
EP96908469A EP0838093B1 (en) 1995-02-17 1996-02-14 Phonon resonator
AU51700/96A AU5170096A (en) 1995-02-17 1996-02-14 Phonon resonator and method for its production

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/393,380 1995-02-17
US08/393,380 US5917195A (en) 1995-02-17 1995-02-17 Phonon resonator and method for its production

Publications (2)

Publication Number Publication Date
WO1996025767A2 WO1996025767A2 (en) 1996-08-22
WO1996025767A3 true WO1996025767A3 (en) 1996-09-26

Family

ID=23554464

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1996/002052 WO1996025767A2 (en) 1995-02-17 1996-02-14 Phonon resonator and method for its production

Country Status (9)

Country Link
US (1) US5917195A (en)
EP (1) EP0838093B1 (en)
JP (1) JP3974654B2 (en)
AT (1) ATE252276T1 (en)
AU (1) AU5170096A (en)
CA (1) CA2213210A1 (en)
DE (1) DE69630387T2 (en)
ES (1) ES2208732T3 (en)
WO (1) WO1996025767A2 (en)

Families Citing this family (59)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0895292A1 (en) * 1997-07-29 1999-02-03 Hitachi Europe Limited Electroluminescent device
FR2789496B1 (en) * 1999-02-10 2002-06-07 Commissariat Energie Atomique LIGHT EMITTING DEVICE AND GUIDE, WITH AN ACTIVE SILICON REGION CONTAINING RADIATION CENTERS, AND METHOD FOR MANUFACTURING SUCH A DEVICE
US6146601A (en) * 1999-10-28 2000-11-14 Eagle-Picher Industries, Inc. Enrichment of silicon or germanium isotopes
US7371962B2 (en) 1999-05-04 2008-05-13 Neokismet, Llc Diode energy converter for chemical kinetic electron energy transfer
US7223914B2 (en) 1999-05-04 2007-05-29 Neokismet Llc Pulsed electron jump generator
US6649823B2 (en) * 1999-05-04 2003-11-18 Neokismet, L.L.C. Gas specie electron-jump chemical energy converter
US6678305B1 (en) * 1999-05-04 2004-01-13 Noekismet, L.L.C. Surface catalyst infra red laser
EP1107044A1 (en) * 1999-11-30 2001-06-13 Hitachi Europe Limited Photonic device
JP3422482B2 (en) * 2000-02-17 2003-06-30 日本電気株式会社 Single photon generator
US6734453B2 (en) 2000-08-08 2004-05-11 Translucent Photonics, Inc. Devices with optical gain in silicon
WO2002015279A1 (en) * 2000-08-15 2002-02-21 Silex Systems Limited A semiconductor isotope superlattice
AUPR083300A0 (en) * 2000-10-17 2000-11-09 Silex Systems Limited An isotope structure formed in an indriect band gap semiconductor material
AU2002236994A1 (en) * 2001-01-17 2002-07-30 Neokismet, L.L.C. Electron-jump chemical energy converter
US7122735B2 (en) * 2001-06-29 2006-10-17 Neokismet, L.L.C. Quantum well energizing method and apparatus
US6653658B2 (en) * 2001-07-05 2003-11-25 Isonics Corporation Semiconductor wafers with integrated heat spreading layer
US6867459B2 (en) * 2001-07-05 2005-03-15 Isonics Corporation Isotopically pure silicon-on-insulator wafers and method of making same
US20040171226A1 (en) * 2001-07-05 2004-09-02 Burden Stephen J. Isotopically pure silicon-on-insulator wafers and method of making same
US7119400B2 (en) * 2001-07-05 2006-10-10 Isonics Corporation Isotopically pure silicon-on-insulator wafers and method of making same
WO2003023474A1 (en) * 2001-09-10 2003-03-20 California Institute Of Technology Tunable resonant cavity based on the field effect in semiconductors
US6834152B2 (en) * 2001-09-10 2004-12-21 California Institute Of Technology Strip loaded waveguide with low-index transition layer
JP2003292398A (en) * 2002-03-29 2003-10-15 Canon Inc Method for producing single crystal silicon wafer
US6829269B2 (en) 2002-05-21 2004-12-07 University Of Massachusetts Systems and methods using phonon mediated intersubband laser
DE60220803T2 (en) * 2002-11-29 2008-03-06 MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. Semiconductor structure for infrared and manufacturing process
WO2004051761A2 (en) * 2002-12-02 2004-06-17 Institute For Scientific Research, Inc. Isotopically enriched piezoelectric devices and method for making the same
US7209618B2 (en) * 2003-03-25 2007-04-24 Hewlett-Packard Development Company, L.P. Scanner transparent media adapter using fiber optic face plate
JP2005083862A (en) * 2003-09-08 2005-03-31 Canon Inc Optical thin-film and mirror using it
US7315679B2 (en) * 2004-06-07 2008-01-01 California Institute Of Technology Segmented waveguide structures
US7176112B2 (en) * 2004-09-21 2007-02-13 Atmel Corporation Non-thermal annealing with electromagnetic radiation in the terahertz range of doped semiconductor material
JP4550613B2 (en) * 2005-02-21 2010-09-22 古河電気工業株式会社 Anisotropic heat conduction material
US7826688B1 (en) 2005-10-21 2010-11-02 Luxtera, Inc. Enhancing the sensitivity of resonant optical modulating and switching devices
US7619238B2 (en) * 2006-02-04 2009-11-17 Sensor Electronic Technology, Inc. Heterostructure including light generating structure contained in potential well
JP2007238862A (en) * 2006-03-10 2007-09-20 Denso Corp Heat transport medium
JP5004072B2 (en) * 2006-05-17 2012-08-22 学校法人慶應義塾 Ion irradiation effect evaluation method, process simulator and device simulator
JP2008063411A (en) * 2006-09-06 2008-03-21 Denso Corp Heat-transporting fluid, heat-transporting structure and method for transporting heat
EP2196564B1 (en) 2007-10-03 2013-03-06 National Institute of Advanced Industrial Science And Technology Isotope diamond laminate
US8450704B2 (en) * 2009-12-04 2013-05-28 Massachusetts Institute Of Technology Phonon-enhanced crystal growth and lattice healing
US9806226B2 (en) 2010-06-18 2017-10-31 Sensor Electronic Technology, Inc. Deep ultraviolet light emitting diode
US8927959B2 (en) 2010-06-18 2015-01-06 Sensor Electronic Technology, Inc. Deep ultraviolet light emitting diode
US8907322B2 (en) 2010-06-18 2014-12-09 Sensor Electronic Technology, Inc. Deep ultraviolet light emitting diode
US8739859B2 (en) 2010-10-04 2014-06-03 Toyota Motor Engineering & Manufacturing North America, Inc. Reversible thermal rectifiers, temperature control systems and vehicles incorporating the same
KR101265178B1 (en) 2011-12-23 2013-05-15 서울대학교산학협력단 Electroluminescence device using indirect bandgab semiconductor
MX2014007901A (en) * 2011-12-30 2015-04-16 James Dalton Bell Isotopically altered optical fiber.
US9059388B2 (en) * 2012-03-21 2015-06-16 University Of Maryland College Park Phoniton systems, devices, and methods
US9817153B2 (en) 2012-05-22 2017-11-14 Nxt Energy Solutions, Inc. Gravity transducer system and method including a junction with a first metal and a second metal
US9437892B2 (en) 2012-07-26 2016-09-06 Quswami, Inc. System and method for converting chemical energy into electrical energy using nano-engineered porous network materials
JP5677385B2 (en) 2012-08-24 2015-02-25 株式会社東芝 Stimulated phonon emission device
US9291297B2 (en) 2012-12-19 2016-03-22 Elwha Llc Multi-layer phononic crystal thermal insulators
US8847204B2 (en) 2013-02-26 2014-09-30 Seoul National University R&Db Foundation Germanium electroluminescence device and fabrication method of the same
US9268092B1 (en) * 2013-03-14 2016-02-23 Sandia Corporation Guided wave opto-acoustic device
US8975617B2 (en) * 2013-06-03 2015-03-10 Dan Berco Quantum interference device
WO2016157184A1 (en) * 2015-03-30 2016-10-06 Yeda Research And Development Co. Ltd. All-optical single-atom photon router controlled by a single photon
JP2017092075A (en) * 2015-11-02 2017-05-25 株式会社ソディック Light emitting element
US10097281B1 (en) 2015-11-18 2018-10-09 Hypres, Inc. System and method for cryogenic optoelectronic data link
KR102181323B1 (en) * 2016-04-06 2020-11-23 한국전자통신연구원 Laser device and methods for manufacturing the same
JP6278423B2 (en) * 2016-06-30 2018-02-14 株式会社ソディック Light emitting element
TWI806553B (en) * 2021-04-21 2023-06-21 美商安托梅拉公司 Semiconductor device including a superlattice and enriched silicon 28 epitaxial layer and associated methods
US11810784B2 (en) 2021-04-21 2023-11-07 Atomera Incorporated Method for making semiconductor device including a superlattice and enriched silicon 28 epitaxial layer
US11923418B2 (en) 2021-04-21 2024-03-05 Atomera Incorporated Semiconductor device including a superlattice and enriched silicon 28 epitaxial layer
CN117616434A (en) 2021-04-27 2024-02-27 量子源实验室有限公司 Quantum computation

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56164588A (en) * 1980-05-23 1981-12-17 Nippon Telegr & Teleph Corp <Ntt> Semiconductor light amplifier
US4349796A (en) * 1980-12-15 1982-09-14 Bell Telephone Laboratories, Incorporated Devices incorporating phonon filters
US4469977A (en) * 1982-10-19 1984-09-04 The United States Of America As Represented By The Secretary Of The Navy Superlattice ultrasonic wave generator
JPS63115385A (en) * 1986-11-04 1988-05-19 Sony Corp Semiconductor device
JPS6415687A (en) * 1987-07-09 1989-01-19 Nippon Steel Corp Radiation detecting element
US5061970A (en) * 1990-06-04 1991-10-29 Motorola, Inc. Energy band leveling modulation doped quantum well

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5593256A (en) * 1979-01-10 1980-07-15 Sony Corp Semiconductor device
FR2485810A1 (en) * 1980-06-24 1981-12-31 Thomson Csf PROCESS FOR PRODUCING A LAYER CONTAINING SILICON AND PHOTOELECTRIC CONVERSION DEVICE USING THE SAME
FR2511887A1 (en) * 1981-08-28 1983-03-04 Commissariat Energie Atomique ISOTOPIC SEPARATION PROCESS BY TRANSFER OF VIBRATIONAL ENERGY
US4591889A (en) * 1984-09-14 1986-05-27 At&T Bell Laboratories Superlattice geometry and devices
US4785340A (en) * 1985-03-29 1988-11-15 Director-General Of The Agency Of Industrial Science And Technology Semiconductor device having doping multilayer structure
JPS61274322A (en) * 1985-05-29 1986-12-04 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS63269573A (en) * 1987-04-27 1988-11-07 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device having heterojunction
DE3852180T2 (en) * 1987-12-23 1995-04-06 British Telecomm SEMICONDUCTOR HETEROSTRUCTURE.
US5012302A (en) * 1990-03-30 1991-04-30 Motorola, Inc. Enhanced conductivity quantum well having resonant charge coupling
US5144409A (en) * 1990-09-05 1992-09-01 Yale University Isotopically enriched semiconductor devices
JPH0541355A (en) * 1991-08-05 1993-02-19 Fujitsu Ltd Modulation semiconductor material and semiconductor device using same
US5436468A (en) * 1992-03-17 1995-07-25 Fujitsu Limited Ordered mixed crystal semiconductor superlattice device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56164588A (en) * 1980-05-23 1981-12-17 Nippon Telegr & Teleph Corp <Ntt> Semiconductor light amplifier
US4349796A (en) * 1980-12-15 1982-09-14 Bell Telephone Laboratories, Incorporated Devices incorporating phonon filters
US4469977A (en) * 1982-10-19 1984-09-04 The United States Of America As Represented By The Secretary Of The Navy Superlattice ultrasonic wave generator
JPS63115385A (en) * 1986-11-04 1988-05-19 Sony Corp Semiconductor device
JPS6415687A (en) * 1987-07-09 1989-01-19 Nippon Steel Corp Radiation detecting element
US5061970A (en) * 1990-06-04 1991-10-29 Motorola, Inc. Energy band leveling modulation doped quantum well

Non-Patent Citations (6)

* Cited by examiner, † Cited by third party
Title
MIZUNO S ET AL: "Theory of acoustic-phonon transmission in finite-size superlattice systems", PHYSICAL REVIEW B (CONDENSED MATTER), 1 JAN. 1992, USA, vol. 45, no. 2, ISSN 0163-1829, pages 734 - 741, XP002007652 *
PATENT ABSTRACTS OF JAPAN vol. 006, no. 052 (E - 100) 7 April 1982 (1982-04-07) *
PATENT ABSTRACTS OF JAPAN vol. 012, no. 362 (E - 663) 28 September 1988 (1988-09-28) *
PATENT ABSTRACTS OF JAPAN vol. 013, no. 188 (P - 866) 8 May 1989 (1989-05-08) *
PERERA A G U ET AL: "Far infrared detection with a Si p-i interface and multilayer structures", SUPERLATTICES AND MICROSTRUCTURES, 1993, UK, vol. 14, no. 1, ISSN 0749-6036, pages 123 - 128, XP000450506 *
SPITZER J ET AL: "Raman scattering by optical phonons in isotopic /sup 70/(Ge)/sub n//sup 74/(Ge)/sub n/ superlattices", PHYSICAL REVIEW LETTERS, 7 MARCH 1994, USA, vol. 72, no. 10, ISSN 0031-9007, pages 1565 - 1568, XP002007651 *

Also Published As

Publication number Publication date
ATE252276T1 (en) 2003-11-15
US5917195A (en) 1999-06-29
JPH11500580A (en) 1999-01-12
EP0838093A2 (en) 1998-04-29
DE69630387T2 (en) 2004-07-15
EP0838093B1 (en) 2003-10-15
ES2208732T3 (en) 2004-06-16
CA2213210A1 (en) 1996-08-22
AU5170096A (en) 1996-09-04
DE69630387D1 (en) 2003-11-20
JP3974654B2 (en) 2007-09-12
WO1996025767A2 (en) 1996-08-22

Similar Documents

Publication Publication Date Title
WO1996025767A3 (en) Phonon resonator and method for its production
EP1354522A3 (en) Cigarette filter and method for producing the same
WO1998030108A3 (en) Methods of producing chocolates with seeding agents and products produced by the same
HUP9801088A3 (en) Method of generation of sweepout motion profile in an individual section glassware forming system, and the system
SI1456238T1 (en) Production of f(ab&#39;)2 fragments in mammalian cells
BR9608167A (en) P-type zeolite with small particle size and process for producing it
HUP0301255A2 (en) Heat/sound insulation product based on mineral wool
ATE147128T1 (en) METHOD FOR IMPROVING THERMAL INSULATION ON FRAMES MADE OF THERMALLY INSULATED COMPOSITE PROFILES
JPS53104508A (en) High conductivity metal-carbon fiber composite silinding member and production of the same
JPS642379A (en) Manufacture of thermoelectric element
Kalenichenko Luminosity curve of a meteor for the quasicontinuous ejection of particles of uniform initial mass from the surface of the meteor
Nikonenko Process of thermal dehydration of hopeite
JPS55106913A (en) Straight line feeder
Leimer et al. Process for Producing a Silicon Nitride Based Material, Materials Thus Produced, and Application of These
Silin et al. Formation of hot resonant ions in a plasma with developed ion-acoustic turbulence
Kipen Laser effects in the recombinative-emission spectra of silicon?
Zadernovskii et al. Stimulated double-quantum photon-phonon transitions in indirect-gap semiconductors
RU98119344A (en) RAW MATERIAL MIXTURE FOR PRODUCTION OF CONSTRUCTION PRODUCTS
Pottasch Infrared emission from young planetary nebulae.
Flores-Desirena et al. TE (s)-polarized surface exciton polaritons
Miasnikov Luminescence of strong exciton transitions
Masumoto Dynamical aspects of carrier tunneling in semiconductor superlattices
Poiarkova et al. Equation of Motion Method for Multiple Scattering XAFS Debye-Waller Factors
Weidenschilling et al. Origin of Chondrules at Jovian Resonances
Bazhenov et al. Formation and ordering of a surface relief during surface heating and fusion by intense light

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AL AM AT AU AZ BB BG BR BY CA CH CN CZ DE DK EE ES FI GB GE HU IS JP KE KG KP KR KZ LK LR LS LT LU LV MD MG MK MN MW MX NO NZ PL PT RO RU SD SE SG SI SK TJ TM TR TT UA UG UZ VN AZ BY KG KZ RU TJ TM

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): KE LS MW SD SZ UG AT BE CH DE DK ES FR GB GR IE IT LU MC NL PT SE BF BJ CF CG CI CM GA GN ML MR NE SN

AK Designated states

Kind code of ref document: A3

Designated state(s): AL AM AT AU AZ BB BG BR BY CA CH CN CZ DE DK EE ES FI GB GE HU IS JP KE KG KP KR KZ LK LR LS LT LU LV MD MG MK MN MW MX NO NZ PL PT RO RU SD SE SG SI SK TJ TM TR TT UA UG UZ VN AZ BY KG KZ RU TJ TM

AL Designated countries for regional patents

Kind code of ref document: A3

Designated state(s): KE LS MW SD SZ UG AT BE CH DE DK ES FR GB GR IE IT LU MC NL PT SE BF BJ CF CG CI CM GA GN ML MR NE SN

DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
121 Ep: the epo has been informed by wipo that ep was designated in this application
ENP Entry into the national phase

Ref document number: 2213210

Country of ref document: CA

Ref country code: CA

Ref document number: 2213210

Kind code of ref document: A

Format of ref document f/p: F

ENP Entry into the national phase

Ref country code: JP

Ref document number: 1996 525137

Kind code of ref document: A

Format of ref document f/p: F

WWE Wipo information: entry into national phase

Ref document number: 1996908469

Country of ref document: EP

REG Reference to national code

Ref country code: DE

Ref legal event code: 8642

WWP Wipo information: published in national office

Ref document number: 1996908469

Country of ref document: EP

WWG Wipo information: grant in national office

Ref document number: 1996908469

Country of ref document: EP