WO1994000251A1 - A plasma cleaning method for removing residues in a plasma treatment chamber - Google Patents

A plasma cleaning method for removing residues in a plasma treatment chamber Download PDF

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Publication number
WO1994000251A1
WO1994000251A1 PCT/US1993/005750 US9305750W WO9400251A1 WO 1994000251 A1 WO1994000251 A1 WO 1994000251A1 US 9305750 W US9305750 W US 9305750W WO 9400251 A1 WO9400251 A1 WO 9400251A1
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WO
WIPO (PCT)
Prior art keywords
gas
plasma
cleaning
residues
treatment chamber
Prior art date
Application number
PCT/US1993/005750
Other languages
French (fr)
Inventor
Ching-Hwa Chen
David Arnett
David Liu
Original Assignee
Lam Research Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corporation filed Critical Lam Research Corporation
Priority to KR1019940704665A priority Critical patent/KR100293830B1/en
Priority to JP50243794A priority patent/JP3502096B2/en
Priority to DE69320963T priority patent/DE69320963T2/en
Priority to EP93915378A priority patent/EP0647163B1/en
Publication of WO1994000251A1 publication Critical patent/WO1994000251A1/en

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B44—DECORATIVE ARTS
    • B44C—PRODUCING DECORATIVE EFFECTS; MOSAICS; TARSIA WORK; PAPERHANGING
    • B44C1/00—Processes, not specifically provided for elsewhere, for producing decorative surface effects
    • B44C1/22—Removing surface-material, e.g. by engraving, by etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts

Definitions

  • the invention relates to a method of cleaning a vacuum treatment apparatus to remove previously deposited residues which have accumulated on interior surfaces of the apparatus.
  • the method can be used to clean interior surfaces of a plasma chamber wherein specimens such as silicon wafers having one or more layers thereon are subjected to dry etching.
  • the invention relates to plasma etching to remove residues on electrodes, interior walls, and other components located within a plasma treatment chamber.
  • 5,022,958 discloses dry etching a dielectric with CHF 3 + Ar, removing polymer with pure oxygen and further etching the dielectric with CHF 3 + Ar + CF 4 . Such etching, however, results in residues or deposits building up on surfaces inside the plasma treatment chamber.
  • residues adhere upon surfaces in the plasma treatment chamber.
  • These residues contain metals (or silicates, depending on which type of dry etch is used) , chlorine, and organics (or compounds of the aforementioned materials) .
  • the surfaces that the residues adhere to include upper and lower electrode surfaces, walls of the plasma treatment chamber, clamping surfaces, and any other item with which the plasma or its byproducts comes in contact. A build-up of these residues deteriorates the etch performance of the dry etch. As such, the presence of such residues is undesirable.
  • Japanese Laid-Open Patent Publication No. 61- 250185 discloses a method of removing deposits such as Si x Cl y on components of a plasma etching device.
  • the components include a high-frequency electrode and interior surfaces of the plasma reaction chamber.
  • Such deposits are formed when aluminum on the wafer is dry etched by a plasma formed from SiCl 4 .
  • the deposits are removed by contacting the interior surfaces of the chamber with an oxidizing gas which oxidizes the deposits to form Si0 2 .
  • a plasma is then formed from a fluorine containing gas, and the Si0 2 is removed.
  • a gas containing moisture or hydrogen peroxide, ozone, etc. can be introduced in the form of a plasma to promote the reaction:
  • a gas containing fluorine such as CF 4 or NF 3 , SF 6 or NF 3 + 0 2 or SF ⁇ - + 0 2 can be introduced in the form of a plasma to promote the following reaction:
  • Japanese Laid-Open Patent Publication No. 3-62520 discloses a method of using a plasma formed from chlorine and fluorine to remove a reaction product that remains after etching of an aluminum alloy film and after etching of a barrier metal. For instance, when an overlying aluminum layer such as an Al-Si-Cu, Al-Si or Al-Cu film is etched with chlorine and an underlying barrier layer such as TiW, MoSi, WSi, Ti, TiN or ⁇ -Si is etched with fluorine, residual reaction products build up inside the plasma treatment chamber on parts such as electrodes after 10 wafers have been etched.
  • an overlying aluminum layer such as an Al-Si-Cu, Al-Si or Al-Cu film is etched with chlorine and an underlying barrier layer such as TiW, MoSi, WSi, Ti, TiN or ⁇ -Si is etched with fluorine
  • an overlying aluminum layer such as an Al-Si-Cu, Al-Si or Al-Cu film is etched
  • a plasma is formed from a gas containing Cl 2 alone or Cl 2 + BC1 3 or Cl 2 + HCl, and cleaning is performed for 5 minutes. Then, a gas containing SF 6 , SF or C 2 F 5 is converted into plasma, and cleaning is performed for 5 minutes. As a result, Al product and Ti product form A1C1 2 and TiCl 2 which is removed during Cl 2 plasma cleaning, and W product forms WF 5 which is removed during SF 6 plasma cleaning.
  • U.S. Patent No. 4,786,352 discloses a method of cleaning silicon oxide in a low pressure chemical vapor deposition (LPCVD) chamber using a cleaning gas which is decomposed to create etchant species in a plasma.
  • the cleaning gases include CF 4 , CF 4 + 0 2 , C 2 F 6 , SF 6 or NF 3 .
  • Other cleaning gases include CF 3 C1, CF 3 Br, CC1 4 , BC1 3 , Cl 2 , HCl, 0 2 and combinations with or without inert gases.
  • U.S. Patent No. 4,576,698 discloses plasma cleaning of deposition products which build up in a deposition chamber wherein the cleaning gas is P.D. 100.
  • U.S. Patent No. 4,749,440 discloses a method of cleaning oxide deposits on quartz boats.
  • U.S. Patent No. 4,816,113 discloses a process of removing carbon deposits inside a chamber with oxygen plasma.
  • the invention provides a plasma cleaning method for removing aluminum-containing residues in a plasma treatment chamber.
  • the method includes introducing a cleaning gas mixture comprising an oxidizing gas and a chlorine containing gas into the chamber and performing a plasma cleaning step by activating the cleaning gas mixture and forming a plasma containing the cleaning gas, contacting interior surfaces of the chamber with the plasma cleaning gas and removing aluminum-containing residues on the interior surfaces.
  • the cleaning gas can further comprise a fluorine-based gas.
  • the chlorine-based gas can comprise 10-25% by volume of the cleaning gas.
  • the fluorine-based gas can comprise 2-10% by volume of the cleaning gas.
  • the chlorine-based gas can comprise Cl 2 , CC1 4/ HCl or mixture thereof.
  • the fluorine-based gas can comprise NF 3 , SF 6 , a fluorocarbon or mixture thereof.
  • the fluorocarbon can comprise CF 4 , C 2 F 6 or mixture thereof.
  • the oxidizing gas is preferably 0 2 and can contain H 2 0, H 2 0 2 , 0 3 or mixture thereof.
  • the chlorine-based gas and the fluorine-based gas can comprise a chlorofluorocarbon gas.
  • the plasma cleaning gas can remove carbon of organic residues, metals, and metal oxides in the form of gas by-products.
  • aluminum and copper in the residues can be converted into a gaseous form via reaction with the chlorine in the plasma cleaning gas.
  • Oxides and tungsten in the residues can be converted into a gaseous form via reaction with the fluorine of the plasma cleaning gas.
  • the process can consist of alternating steps of "high” and “low” pressures while generating the chamber cleaning plasma. These alternating steps can further be sequentially repeated to further enhance cleaning.
  • the "high" pressure (relative to the processes normally run in the chamber) can be greater than 25 mTorr, and the "low” pressure can be less than 25 mTorr.
  • the high pressure can be at 40 mTorr, and the low pressure can be at 10 mTorr.
  • the residues can be removed without opening the plasma treatment chamber.
  • the cleaning step can be performed following a step of dry etching one or more layers on a wafer wherein the layers include a photoresist, metal film and oxide film and the dry etching causing residues to be deposited on interior surfaces of the plasma treatment chamber.
  • the cleaning s.tep can be performed after etching several hundred such wafers.
  • residues of a chlorine-based dry etching can be removed by the plasma cleaning gas without leaving by-products that will interfere with subsequent dry etching and without generating particles which would reduce a yield of a subsequent dry etch.
  • residues can be completely removed from the interior surfaces of the plasma treatment chamber without by-products remaining in the plasma treatment chamber after the plasma cleaning step is terminated.
  • by-products arising from the use of the cleaning plasma such as A1C1 3 , CO, C0 2 , Cl 2 , CuCl, and WF 5 , can be removed from the plasma treatment chamber when the interior surfaces of the chamber are contacted with the plasma.
  • the invention provides a new and improved method of removing residues from interior surfaces of a plasma treatment chamber. These residues are produced when multilayer structures are dry etched with plasma (such as by chlorine-based and/or fluorine-based plasmas) in the plasma treatment chamber. Such residues contain metals, silicates, chlorine, organics, and/or mixtures thereof.
  • the method is particularly effective in cleaning the apparatus disclosed in commonly-owned U.S. Patent No. 4,948,458 ("Ogle"), the subject matter of which is hereby incorporated by reference.
  • plasma formed from chlorine and an oxidizing gas is used to remove residues from the interior surfaces of a plasma treatment chamber. Because of the completeness of the reactions in converting the solid residues into gaseous form, it is possible to completely clean the plasma treatment chamber, that is, no by-products remain in the chamber.
  • the method according to the invention unexpectedly provides superior cleaning of chamber residues compared to sequential use of individual plasma cleaning gases.
  • a plasma containing only a chlorine-based gas fails to completely remove residues left by dry etching a stack of thin layers such as those encountered in the manufacturing of a semiconductor device.
  • Such layers typically include a barrier metal which can be etched by the addition of a fluorine-based gas.
  • the dry etch residues are a product of a serial etching of some layers of materials such as various metal layers and the constant etching of others such as photoresist.
  • the residues are a complex combination of materials that a selective chlorine-based etch cannot remove.
  • a plasma containing only an oxidizing gas is ineffective in cleaning residue containing metals or silicates, such as aluminum.
  • a plasma containing only a fluorine-based gas results in solid by-products such as A1F 3 that remain in the chamber. These by-products continue interfering with subsequent dry etching because of fluorine that would be freed during the dry etch. In addition, these by-products contribute to particulates that cause a yield loss in the product of the dry etch.
  • a plasma (or its reactive by-products) is introduced into an evacuated chamber (that was previously used for chlorine-based dry etching or chlorine and fluorine-based dry etching) so as to come into contact with the interior surfaces of the plasma treatment chamber, and the products of the reaction with the residues are evacuated.
  • the plasma used to clean the plasma treatment chamber includes an oxidizing gas (e.g., 0 2 ) and a chlorine- based gas (e.g. , Cl 2 ) or a gas mixture containing the oxidizing gas, the chlorine-based gas and a fluorine- based gas.
  • an oxidizing gas e.g., 0 2
  • a chlorine- based gas e.g. , Cl 2
  • the plasma liberates the carbon of the organics and metals such as Al or Cu are released into a gaseous form via reaction with the chlorine.
  • the cleaning process according to the invention can be run at a high pressure (e.g., a pressure greater than 25 mTorr such as 40 mTorr) and then at a low pressure (e.g., a pressure lower than 25 mTorr such as 10 mTorr) , each step being performed for about 15 minutes.
  • a high pressure e.g., a pressure greater than 25 mTorr such as 40 mTorr
  • a low pressure e.g., a pressure lower than 25 mTorr such as 10 mTorr
  • the residues, containing metals, chlorine, fluorine and organics are thus removed via by-products such as A1C1 3 , CO, C0 2 , Cl 2 , CuCl and WF 5 . Due to the completeness of the reactions in converting the solid residues into gaseous form, no by-products remain in the chamber after the cleaning step.
  • the cleaning plasma includes an oxidizing gas and a chlorine-based gas
  • the chlorine-based gas can be present in the amount of 10- 25% by volume.
  • the cleaning gas includes an oxidizing gas, a chlorine-based gas and a fluorine-based gas
  • the chlorine-based gas can be present in the amount of 10-25% by volume
  • the fluorine-based gas can be present in the amount of 2- 10% by volume.
  • the oxidizing gas can also contain H 2 0, H 2 0 2 , 0 3 and/or mixtures thereof.
  • the chlorine-based gas can comprise Cl 2 , CC1 4 , HCl and/or mixtures thereof.
  • the fluorine-based gas can comprise NF 3 , SF 6 , a fluorocarbon such as CF 4 or C 2 F 6 and/or combinations thereof. In either case, the molecules themselves, a combination, or the dissociated ions and radicals thereof may be incorporated into the oxidizing, the chlorine-based and/or the fluorine-based gas.
  • the chlorine-based and fluorine-based gases can be replaced or supplemented by a chlorocarbon gas (also known as a CFC) .

Abstract

A plasma cleaning method for removing residues previously formed in a plasma treatment chamber by dry etching layers such as photoresist, barriers, etc., on a wafer. The method includes introducing a cleaning gas mixture of an oxidizing gas and a chlorine containing gas into the chamber followed by performing a plasma cleaning step. The plasma cleaning step is performed by activating the cleaning gas mixture and forming a plasma cleaning gas, contacting interior surfaces of the chamber with the plasma cleaning gas and removing residues on the interior surfaces. The cleaning gas mixture can also include a fluorine-based gas. For instance, the cleaning gas can include Cl2 and O2 and optionally CF4. An advantage of the cleaning method is that it is not necessary to open the plasma treatment chamber. Also, it is possible to completely remove all residues and prevent by-products formed during the cleaning step from remaining after the cleaning step.

Description

A PLASMA CLEANING METHOD FOR REMOVING RESIDUES IN A PLASMA TREATMENT CHAMBER
BACKGROUND OF THE INVENTION
Field of the Invention
The invention relates to a method of cleaning a vacuum treatment apparatus to remove previously deposited residues which have accumulated on interior surfaces of the apparatus. For instance, the method can be used to clean interior surfaces of a plasma chamber wherein specimens such as silicon wafers having one or more layers thereon are subjected to dry etching. In particular, the invention relates to plasma etching to remove residues on electrodes, interior walls, and other components located within a plasma treatment chamber.
Description of the Related Art
It is conventional to dry etch a stack of thin layers which can include a photoresist (for patterning the underlying layers) , an anti-reflective coating (also known as an ARC layer, used for covering the surface of the underlying layers) , aluminum (or an aluminum alloy) , and a barrier material (such as metal, metal compound or suicide). For instance, U.S. Patent No. 4,986,877 discloses dry etching of aluminum with Cl2, polysilicon with SF6, Si02 and Si3N4 with a fluorocarbon and photoresist with 02. U.S. Patent No. 5,022,958 discloses dry etching a dielectric with CHF3 + Ar, removing polymer with pure oxygen and further etching the dielectric with CHF3 + Ar + CF4. Such etching, however, results in residues or deposits building up on surfaces inside the plasma treatment chamber.
When a film is dry etched in a chlorine-based plasma (or a sequence of chlorine-based and fluorine- based dry etches) , residual reaction product
(henceforth referred to as "residues") adhere upon surfaces in the plasma treatment chamber. These residues contain metals (or silicates, depending on which type of dry etch is used) , chlorine, and organics (or compounds of the aforementioned materials) . The surfaces that the residues adhere to include upper and lower electrode surfaces, walls of the plasma treatment chamber, clamping surfaces, and any other item with which the plasma or its byproducts comes in contact. A build-up of these residues deteriorates the etch performance of the dry etch. As such, the presence of such residues is undesirable.
Japanese Laid-Open Patent Publication No. 61- 250185 discloses a method of removing deposits such as SixCly on components of a plasma etching device. The components include a high-frequency electrode and interior surfaces of the plasma reaction chamber. Such deposits are formed when aluminum on the wafer is dry etched by a plasma formed from SiCl4. The deposits are removed by contacting the interior surfaces of the chamber with an oxidizing gas which oxidizes the deposits to form Si02. A plasma is then formed from a fluorine containing gas, and the Si02 is removed. For instance, a gas containing moisture or hydrogen peroxide, ozone, etc. , can be introduced in the form of a plasma to promote the reaction:
SixCly + H20 → mHCl (gas) t + Si02 Next, after evacuating the chamber, a gas containing fluorine such as CF4 or NF3, SF6 or NF3 + 02 or SF<- + 02 can be introduced in the form of a plasma to promote the following reaction:
Si02 + CF4 + e → SiF4 (gas) t + C02 t + e
Japanese Laid-Open Patent Publication No. 3-62520 discloses a method of using a plasma formed from chlorine and fluorine to remove a reaction product that remains after etching of an aluminum alloy film and after etching of a barrier metal. For instance, when an overlying aluminum layer such as an Al-Si-Cu, Al-Si or Al-Cu film is etched with chlorine and an underlying barrier layer such as TiW, MoSi, WSi, Ti, TiN or α-Si is etched with fluorine, residual reaction products build up inside the plasma treatment chamber on parts such as electrodes after 10 wafers have been etched. To remove the deposits, a plasma is formed from a gas containing Cl2 alone or Cl2 + BC13 or Cl2 + HCl, and cleaning is performed for 5 minutes. Then, a gas containing SF6, SF or C2F5 is converted into plasma, and cleaning is performed for 5 minutes. As a result, Al product and Ti product form A1C12 and TiCl2 which is removed during Cl2 plasma cleaning, and W product forms WF5 which is removed during SF6 plasma cleaning.
U.S. Patent No. 4,786,352 discloses a method of cleaning silicon oxide in a low pressure chemical vapor deposition (LPCVD) chamber using a cleaning gas which is decomposed to create etchant species in a plasma. The cleaning gases include CF4, CF4 + 02, C2F6, SF6 or NF3. Other cleaning gases include CF3C1, CF3Br, CC14, BC13, Cl2, HCl, 02 and combinations with or without inert gases.
U.S. Patent No. 4,576,698 discloses plasma cleaning of deposition products which build up in a deposition chamber wherein the cleaning gas is P.D. 100. U.S. Patent No. 4,749,440 discloses a method of cleaning oxide deposits on quartz boats. U.S. Patent No. 4,816,113 discloses a process of removing carbon deposits inside a chamber with oxygen plasma.
SUMMARY OF THE INVENTION
The invention provides a plasma cleaning method for removing aluminum-containing residues in a plasma treatment chamber. The method includes introducing a cleaning gas mixture comprising an oxidizing gas and a chlorine containing gas into the chamber and performing a plasma cleaning step by activating the cleaning gas mixture and forming a plasma containing the cleaning gas, contacting interior surfaces of the chamber with the plasma cleaning gas and removing aluminum-containing residues on the interior surfaces. The cleaning gas can further comprise a fluorine-based gas.
The chlorine-based gas can comprise 10-25% by volume of the cleaning gas. The fluorine-based gas can comprise 2-10% by volume of the cleaning gas. The chlorine-based gas can comprise Cl2, CC14/ HCl or mixture thereof. The fluorine-based gas can comprise NF3, SF6, a fluorocarbon or mixture thereof. The fluorocarbon can comprise CF4, C2F6 or mixture thereof. The oxidizing gas is preferably 02 and can contain H20, H202, 03 or mixture thereof. The chlorine-based gas and the fluorine-based gas can comprise a chlorofluorocarbon gas.
The plasma cleaning gas can remove carbon of organic residues, metals, and metal oxides in the form of gas by-products. For instance, aluminum and copper in the residues can be converted into a gaseous form via reaction with the chlorine in the plasma cleaning gas. Oxides and tungsten in the residues can be converted into a gaseous form via reaction with the fluorine of the plasma cleaning gas.
The process can consist of alternating steps of "high" and "low" pressures while generating the chamber cleaning plasma. These alternating steps can further be sequentially repeated to further enhance cleaning. For instance, the "high" pressure (relative to the processes normally run in the chamber) can be greater than 25 mTorr, and the "low" pressure can be less than 25 mTorr. As a specific example, the high pressure can be at 40 mTorr, and the low pressure can be at 10 mTorr.
As a result of this plasma cleaning procedure, the residues can be removed without opening the plasma treatment chamber. For instance, the cleaning step can be performed following a step of dry etching one or more layers on a wafer wherein the layers include a photoresist, metal film and oxide film and the dry etching causing residues to be deposited on interior surfaces of the plasma treatment chamber. In particular, the cleaning s.tep can be performed after etching several hundred such wafers. For example, residues of a chlorine-based dry etching can be removed by the plasma cleaning gas without leaving by-products that will interfere with subsequent dry etching and without generating particles which would reduce a yield of a subsequent dry etch. In fact, residues can be completely removed from the interior surfaces of the plasma treatment chamber without by-products remaining in the plasma treatment chamber after the plasma cleaning step is terminated. For instance, by-products arising from the use of the cleaning plasma, such as A1C13, CO, C02, Cl2, CuCl, and WF5, can be removed from the plasma treatment chamber when the interior surfaces of the chamber are contacted with the plasma.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
The invention provides a new and improved method of removing residues from interior surfaces of a plasma treatment chamber. These residues are produced when multilayer structures are dry etched with plasma (such as by chlorine-based and/or fluorine-based plasmas) in the plasma treatment chamber. Such residues contain metals, silicates, chlorine, organics, and/or mixtures thereof. The method is particularly effective in cleaning the apparatus disclosed in commonly-owned U.S. Patent No. 4,948,458 ("Ogle"), the subject matter of which is hereby incorporated by reference.
According to the invention, plasma formed from chlorine and an oxidizing gas is used to remove residues from the interior surfaces of a plasma treatment chamber. Because of the completeness of the reactions in converting the solid residues into gaseous form, it is possible to completely clean the plasma treatment chamber, that is, no by-products remain in the chamber.
The method according to the invention unexpectedly provides superior cleaning of chamber residues compared to sequential use of individual plasma cleaning gases. For instance, a plasma containing only a chlorine-based gas fails to completely remove residues left by dry etching a stack of thin layers such as those encountered in the manufacturing of a semiconductor device. Such layers typically include a barrier metal which can be etched by the addition of a fluorine-based gas. It should be noted that the dry etch residues are a product of a serial etching of some layers of materials such as various metal layers and the constant etching of others such as photoresist. As such, the residues are a complex combination of materials that a selective chlorine-based etch cannot remove.
A plasma containing only an oxidizing gas is ineffective in cleaning residue containing metals or silicates, such as aluminum. A plasma containing only a fluorine-based gas results in solid by-products such as A1F3 that remain in the chamber. These by-products continue interfering with subsequent dry etching because of fluorine that would be freed during the dry etch. In addition, these by-products contribute to particulates that cause a yield loss in the product of the dry etch.
It has been unexpectedly discovered that a plasma formed from chlorine and an oxidizing gas with or without a fluorine containing gas is effective in completely removing residues in a plasma treatment chamber. On the other hand, if cleaning is performed sequentially with an oxidizing plasma, then a chlorine- based plasma followed by a fluorine-based plasma, each plasma is too selective in what is reacted and consequently cannot remove residues that contain complex compounds of metals, chlorine, and/or organics. The same is true for different sequences of cleaning with such oxidizing, chlorine-based and fluorine-based gases. Furthermore, by using a sequence of etches based on the oxidizing, chlorine-based and fluorine- based gases, other by-products are formed which continue to interfere with dry etching and even produce particles that reduce the yield of the dry etch. According to the invention, however, it is possible to plasma clean a plasma treatment chamber and completely remove the residues left from previous dry etching without generating particles that would reduce the yield of the dry etch.
According to the invention, a plasma (or its reactive by-products) is introduced into an evacuated chamber (that was previously used for chlorine-based dry etching or chlorine and fluorine-based dry etching) so as to come into contact with the interior surfaces of the plasma treatment chamber, and the products of the reaction with the residues are evacuated. The plasma used to clean the plasma treatment chamber includes an oxidizing gas (e.g., 02) and a chlorine- based gas (e.g. , Cl2) or a gas mixture containing the oxidizing gas, the chlorine-based gas and a fluorine- based gas. As a result, the plasma liberates the carbon of the organics and metals such as Al or Cu are released into a gaseous form via reaction with the chlorine. Oxides and some metals such as W react with the fluorine to form other gas by-products. The chlorine and fluorine also provide catalytic assistance to the oxygen (via sputtering) so as to liberate the carbon of the organics. As all of these reactions take place simultaneously and assist each other, all material in the residues is consumed. Accordingly, the residues of the previous chlorine-based dry etching are removed without leaving products that would interfere with future dry etching and without generating particles that would reduce the yield of the dry etch.
The following example is given for purposes of further explaining aspects of the invention. Exa ple In order to etch a multi-layer stack (such as an overlying layer of photoresists for patterning, Ti for the ARC, aluminum with copper and TiW) , it is conventional to perform at least a two etching step process. In particular, the Ti and Al are etched with a chlorine-based dry etch, and then the TiW is etched with a fluorine-based dry etch. When several hundred wafers are dry etched, residues from these etches coat the surfaces of the chamber, accumulating to a significant thickness which adversely affects subsequent dry etching of such wafers. In accordance with the invention, these residues can be removed by using the following gas mixtures: (1) 02 + Cl2 (gas volume ratio 20:4)
(2) 02 + Cl2 + CF4 (gas volume ratio 20:4:1)
The cleaning process according to the invention can be run at a high pressure (e.g., a pressure greater than 25 mTorr such as 40 mTorr) and then at a low pressure (e.g., a pressure lower than 25 mTorr such as 10 mTorr) , each step being performed for about 15 minutes. These "high" and "low" pressures are relative to the normal operating range of the dry etches performed in the chamber. The residues, containing metals, chlorine, fluorine and organics are thus removed via by-products such as A1C13, CO, C02, Cl2, CuCl and WF5. Due to the completeness of the reactions in converting the solid residues into gaseous form, no by-products remain in the chamber after the cleaning step.
In the case where the cleaning plasma includes an oxidizing gas and a chlorine-based gas, the chlorine-based gas can be present in the amount of 10- 25% by volume. In the case where the cleaning gas includes an oxidizing gas, a chlorine-based gas and a fluorine-based gas, the chlorine-based gas can be present in the amount of 10-25% by volume, and the fluorine-based gas can be present in the amount of 2- 10% by volume. The oxidizing gas can also contain H20, H202, 03 and/or mixtures thereof. The chlorine-based gas can comprise Cl2, CC14, HCl and/or mixtures thereof. The fluorine-based gas can comprise NF3, SF6, a fluorocarbon such as CF4 or C2F6 and/or combinations thereof. In either case, the molecules themselves, a combination, or the dissociated ions and radicals thereof may be incorporated into the oxidizing, the chlorine-based and/or the fluorine-based gas. The chlorine-based and fluorine-based gases can be replaced or supplemented by a chlorocarbon gas (also known as a CFC) .
While the invention has been described with reference to the foregoing embodiments, various changes and modifications can be made thereto within the scope of the appended claims.

Claims

What is Claimed is:
1. A plasma cleaning method for removing aluminum-containing residues in a plasma treatment chamber, comprising: introducing a cleaning gas mixture comprising an oxidizing gas and a chlorine containing gas into a plasma treatment chamber; and performing a plasma cleaning step by activating the cleaning gas mixture and forming a plasma with the cleaning gas, contacting interior surfaces of the plasma treatment chamber with the plasma cleaning gas and removing aluminum-containing residues on the interior surfaces.
2. The method of claim 1, wherein the cleaning gas mixture further comprises a fluorine-based gas.
3. The method of claim 1, wherein the chlorine-based gas comprises 10-25% by volume of the cleaning gas.
4. The method of claim 2, wherein the fluorine-based gas comprises 2-10% by volume of the cleaning gas.
5. The method of claim 1, wherein the chlorine-based gas comprises Cl2, CC14, HCl or mixtures thereof.
6. The method of claim 2, wherein the fluorine-based gas comprises NF3, SF6, a fluorocarbon or mixture thereof.
7. The method of claim 6, wherein the fluorocarbon comprises CF4, C2F6 or mixture thereof.
8. The method of claim 1, wherein the oxidizing gas contains H20, H202, 03 or mixture thereof.
9. The method of claim 2, wherein the chlorine-based gas and the fluorine-based gas comprise a chlorofluorocarbon gas.
10. The method of claim 1, wherein the plasma cleaning gas removes carbon of organic residues, metals, and metal oxides in the form of gas by¬ products.
11. The method of claim 1, wherein at least one of aluminum and copper in the residues is converted into a gaseous form via reaction with the chlorine in the plasma cleaning gas.
12. The method of claim 2, wherein at least one of oxides and tungsten in the residues is converted into a gaseous form via reaction with the fluorine of the plasma cleaning gas.
13. The method of claim 1, wherein the plasma treatment chamber is evacuated during the cleaning step.
14. The method of claim 13, wherein during the cleaning step an interior of the plasma treatment chamber is initially at a high pressure and then at a low pressure, the high pressure being greater than 25 mTorr and the low pressure being less than 25 mTorr.
15. The method of claim 14, wherein the high pressure is around 40 mTorr and the low pressure is around 10 mTorr.
16. The method of claim 1, wherein at least one by-product selected from the group consisting of
A1C13, CO, C02, Cl2, CuCl, and WF5 is removed from the plasma treatment chamber when the interior surfaces of the chamber are contacted with the plasma cleaning gas.
17. The method of claim 1, wherein the residues are removed without opening the plasma treatment chamber.
18. The method of claim 1, further comprising a step of dry etching one or more layers on at least one wafer prior to the plasma cleaning step, the layers including at least one of a photoresist, metal film and oxide film, the dry etching causing residues to be deposited on interior surfaces of the plasma treatment chamber.
19. The method of claim 18, wherein the dry etch comprises a chlorine-based dry etch and residues of the chlorine-based dry etch are removed by the plasma cleaning gas without leaving by-products that will interfere with a dry etch performed after the plasma cleaning step and without generating particles which would reduce a yield of a subsequent dry etch.
20. The method of claim 1, wherein the residues are completely removed from the interior surfaces of the plasma treatment chamber and no by¬ products remain in the plasma treatment chamber after the plasma cleaning step is terminated.
PCT/US1993/005750 1992-06-22 1993-06-16 A plasma cleaning method for removing residues in a plasma treatment chamber WO1994000251A1 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1019940704665A KR100293830B1 (en) 1992-06-22 1993-06-16 Plasma Purification Method for Removing Residues in Plasma Treatment Chamber
JP50243794A JP3502096B2 (en) 1992-06-22 1993-06-16 Plasma cleaning method for removing residue in plasma processing apparatus
DE69320963T DE69320963T2 (en) 1992-06-22 1993-06-16 PLASMA CLEANING METHOD FOR REMOVING RESIDUES IN A PLASMA TREATMENT CHAMBER
EP93915378A EP0647163B1 (en) 1992-06-22 1993-06-16 A plasma cleaning method for removing residues in a plasma treatment chamber

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US90266392A 1992-06-22 1992-06-22
US07/902,663 1992-06-22

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EP (1) EP0647163B1 (en)
JP (1) JP3502096B2 (en)
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DE (1) DE69320963T2 (en)
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TW227643B (en) 1994-08-01
JP3502096B2 (en) 2004-03-02
EP0647163A4 (en) 1996-02-07
EP0647163B1 (en) 1998-09-09
DE69320963T2 (en) 1999-05-12
KR100293830B1 (en) 2001-09-17
KR950702140A (en) 1995-06-19
DE69320963D1 (en) 1998-10-15
JPH07508313A (en) 1995-09-14
EP0647163A1 (en) 1995-04-12
US5356478A (en) 1994-10-18

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