WO1993016987A1 - Low temperature flexible die attach adhesive and articles using same - Google Patents

Low temperature flexible die attach adhesive and articles using same Download PDF

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Publication number
WO1993016987A1
WO1993016987A1 PCT/US1993/001704 US9301704W WO9316987A1 WO 1993016987 A1 WO1993016987 A1 WO 1993016987A1 US 9301704 W US9301704 W US 9301704W WO 9316987 A1 WO9316987 A1 WO 9316987A1
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WO
WIPO (PCT)
Prior art keywords
flexible
adhesive
cyanate ester
silver
group
Prior art date
Application number
PCT/US1993/001704
Other languages
French (fr)
Inventor
My N. Nguyen
Original Assignee
Johnson Matthey Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Johnson Matthey Inc. filed Critical Johnson Matthey Inc.
Publication of WO1993016987A1 publication Critical patent/WO1993016987A1/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C261/00Derivatives of cyanic acid
    • C07C261/02Cyanates
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C08G59/4007Curing agents not provided for by the groups C08G59/42 - C08G59/66
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00Use of organic ingredients
    • C08K5/0008Organic ingredients according to more than one of the "one dot" groups of C08K5/01 - C08K5/59
    • C08K5/0016Plasticisers
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J179/00Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen, with or without oxygen, or carbon only, not provided for in groups C09J161/00 - C09J177/00
    • C09J179/04Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
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    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20Conductive material dispersed in non-conductive organic material
    • H01B1/22Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
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    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
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    • H01L2224/8319Arrangement of the layer connectors prior to mounting
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    • H01L2224/838Bonding techniques
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    • H01L2924/15747Copper [Cu] as principal constituent

Definitions

  • the present invention relates to a flexible die attach adhesive.
  • the flexible die adhesive can be modified to be capable of developing very good adhesive strength at low curing temperatures.
  • One embodiment of the invention relates to flexible card for processing in a computer that includes a semiconductor device enveloped therein adhered to a substrate by the aforementioned adhesive.
  • cards One application employing semiconductor devices which is gaining increasing importance is in the field of cards to be processed in computers where such cards incorporate one or more semiconductor devices and are therefore able to store more information than magnetic cards. Such cards may be useful over a broad spectrum of applications including, for example, credit and telephone cards. These cards, which are referred to as “smart cards", must be thin and must be able to bend without breaking, i.e., the card and card components must be flexible.
  • "smart cards” are constructed of a material such as polyester reinforced with glass fibers and have enveloped within the card one or more semiconductor devices. Desirably, such devices should be secured within the card by a die attach adhesive which is flexible but which provides very good adhesive strength and does not impart stress to the die during curing. It is also important that the adhesive be capable of being cured at relatively low temperatures to facilitate fabrication of the cards without damage .to the card or the semiconductor devices.
  • a die attach adhesive which is flexible but which provides very good adhesive strength and does not impart stress to the die during curing. It is also important that the adhesive be capable of being cured at relatively low temperatures to facilitate fabrication of the cards without damage .to the card or the semiconductor devices.
  • the invention includes adhesive formulation for bonding a semiconductor device to a substrate, which comprises a reaction product of cyanate ester and the elastomeric modifier, as discussed above, having a low glass transition temperature of less than about 25°C.
  • the adhesive may include an alkylphenol, a metal-containing curing catalyst, and/or silver in the form of flake or powder.
  • the alkylphenol is nonylphenol
  • the metal-containing curing catalyst is from the group consisting of cobalt acetylacetonate and copper naphthenate and the silver is present in amounts up to 90 wt.%.
  • the adhesive comprises the reaction product of 6 to 24 wt.% modifier and 4 to 16 wt.% cyanate ester, 0.01 to 0.06 wt. % metal-containing curing catalyst, 0.5 to 2 wt. % alkylphenol and up to 90 wt.% silver flake and/or powder. Where alkylphenol and/or metal containing catalyst are present as little as 4 to 20% silver may be sufficient. Where these curing catalysts are absent 60 to 90 wt. % silver may be needed to impart rapid curability to the adhesive formulation.
  • a novel card in accordance with the invention for processing in a computer, comprises a semiconductor device enveloped within the card and adhered with a flexible adhesive to a substrate.
  • the substrate is advantageously a flexible organic polymeric substrate and/or a lead frame or metal conductor.
  • the adhesive comprises the reaction product of cyanate ester and modifier, as described above, having a glass transition temperature of less than about 25°C, and which may include an alkylphenol, a metal-containing curing catalyst and/or silver in the form of flake and/or powder.
  • Figure 1 is a graph showing the relationship between the percentage of modifier, i.e., flexibilizer and radius of curvature, ("ROC");
  • Figure 2 is a graph of die stress against ROC.
  • Figure 3 is a schematic view partly in section of a card within which one or more semiconductor devices are enveloped and showing such devices bonded to a substrate.
  • a flexible adhesive is needed for a number of applications where semiconductor devices with large surface areas are attached to flexible substrates, particularly where there is a significant difference between the thermal expansion coefficients of the silicon of the semiconductor device and the substrates.
  • a low-stress die attach adhesive is required for maximum performance. This is especially important where the semiconductor device is to be attached to lead frames, such as copper lead frames, and polymeric substrates such as polyester, polyamide films, etc. If a conventional rigid adhesive such as epoxy referred to in the aforementioned Steinegger article is used in the above described applications, the thermally induced tensile stress imparted to the surface of the semiconductor die is so high that it usually results in a silicon fracture.
  • ROC radius of curvature
  • cyanate ester and silver do not give the flexible properties needed for the above applications.
  • flexible properties can be achieved by reacting cyanate esters with at least one elastomeric and thermoplastic modifier from the group of hydroxyl (-OH), amine (NH) or epoxide reactive functional groups, or mixtures thereof by, for example, grafting such group to cyanate ester molecular structures.
  • cyanate ester 15% cyanate ester is needed in the adhesive formulation to provide satisfactory curing in this system.
  • Other elastomeric modifiers containing hydroxyl reactive groups including hydroxyl terminated butadiene and butadiene-acrylonitrile copolymers, such as "HYCAR” sold by B.F. Goodrich and "V_TEL-3600” which is a saturated copolyester resin with a Tg of -11°C, are useful as well as amine functional groups such as polyurethane, elastomer, urethane acrylate, silicone imides, etc.
  • a card 10 usually made of plastic, includes a metal conductor 12 to which is bonded a semiconductor device 14. Glass fiber reinforced polyester pads 16 may be included and the entire device is encapsulated, such as within an epoxy resin 18. The epoxy resin may be ground flat to produce a thin plastic card.
  • the adhesive formulation of the present invention is especially suitable for bonding the semiconductor device to a substrate because it is capable of being cured at comparatively low temperatures of 100 to 130 °C and has very good adhesive strength while imparting low stress on the die. It is highly desirable for smart card application to employ a die attach adhesive capable of being cured at temperatures not substantially greater than about 130 °C.
  • the die may be attached to a lead frame, such as a copper lead frame in which case the low temperature curing adhesive minimizes oxidation of the copper and thereby eliminates the need of nitrogen or other inert atmosphere such as is often used in curing ovens.
  • the following examples are of flexible adhesive compositions used to bond semiconductor devices suitable for smart card manufacture.
  • the cyanate ester Arocy L10 is available from Rhone-Poulenc of Louisville, Kentucky.
  • the modified bisphenol epoxy resin such as XB 4122 or XUGY 376 is a flexible epoxy supplied by Ciba Geigy.
  • the catalyst system is a solution of copper naphthenate or copper acetylacetonate in nonylphenol.
  • the silver flake has the same physical properties described in the previous examples. Adhesive strength results appear in the following table.
  • the catalysts in the foregoing system may be copper naphthenate or copper acetylacetonate, nonylphenol and silver.
  • the formulation in Example III was cured at 100°C for 15 minutes and exhibited an adhesive strength of over 30 Kg for a semiconductor die X150 attached on a copper lead frame.

Abstract

Described is a flexible adhesive formulation for bonding a semiconductor device (14), a flexible substrate and a flexible card containing a semiconductor device (14) which can be processed in a computer.

Description

LOW TEMPERATURE FLEXIBLE DIE ATTACH ADHESIVE
AND ARTICLES USING SAME
Field of the Invention
The present invention relates to a flexible die attach adhesive. The flexible die adhesive can be modified to be capable of developing very good adhesive strength at low curing temperatures. One embodiment of the invention relates to flexible card for processing in a computer that includes a semiconductor device enveloped therein adhered to a substrate by the aforementioned adhesive.
Background of the Invention
As uses for semiconductor devices continue to increase there is a growing demand for adhesive compositions and formulations capable of securing semiconductor devices to substrates under a variety of conditions. The wide variety of applications using semiconductor devices sometimes require that such adhesive formulations be flexible where die device must be flexible and sometimes that the adhesive formulation be capable of developing very good adhesive strength at low curing temperatures so that significant stress is not imparted to the die and the curing conditions do not adversely affect other components.
One application employing semiconductor devices which is gaining increasing importance is in the field of cards to be processed in computers where such cards incorporate one or more semiconductor devices and are therefore able to store more information than magnetic cards. Such cards may be useful over a broad spectrum of applications including, for example, credit and telephone cards. These cards, which are referred to as "smart cards", must be thin and must be able to bend without breaking, i.e., the card and card components must be flexible.
Typically, "smart cards" are constructed of a material such as polyester reinforced with glass fibers and have enveloped within the card one or more semiconductor devices. Desirably, such devices should be secured within the card by a die attach adhesive which is flexible but which provides very good adhesive strength and does not impart stress to the die during curing. It is also important that the adhesive be capable of being cured at relatively low temperatures to facilitate fabrication of the cards without damage .to the card or the semiconductor devices.
-•• Cards including semiconductor devices enveloped therein are disclosed in an article by Hans Steinegger, Microelectronics Manufacturing Technology, pp. 13-15, December 1991; the disclosure of which is expressly incorporated herein by reference. As disclosed in the aforementioned article, the semiconductor devices have heretofore been bonded directly to a metal conductor or other substrate using an epoxy adhesive followed by encapsulation with epoxy resin. The obstacles to the production of such "smart cards" include problems arising in wire bonding because the basic material of the film is not as heat resistant as might be desired. It is pointed out in the article that wire bonding must be performed at temperatures that do not exceed 180°C. It is apparent therefor that there is a need for a flexible die attach adhesive which is capable of being cured at relatively low temperatures but has very good adhesive strength.
Summary of the Invention
In a co-pending application I described adhesive formulations which are rapidly curing, i.e., are capable of being cured in under 5 minutes at 200°C. However, these formulations contain cyanate esters and are not flexible. The present invention provides a method of rendering cyanate esters flexible by reacting therewith at least one elastomeric and thermoplastic modifier from the group of hydroxyl (-OH), amine (NH) or epoxide reactive groups, or mixtures thereof by, for example, grafting such groups to cyanate molecular structures.
In addition to the foregoing, the invention includes adhesive formulation for bonding a semiconductor device to a substrate, which comprises a reaction product of cyanate ester and the elastomeric modifier, as discussed above, having a low glass transition temperature of less than about 25°C. To impart rapid curability at low temperature, the adhesive may include an alkylphenol, a metal-containing curing catalyst, and/or silver in the form of flake or powder. Advantageously, the alkylphenol is nonylphenol, the metal-containing curing catalyst is from the group consisting of cobalt acetylacetonate and copper naphthenate and the silver is present in amounts up to 90 wt.%. In a preferred embodiment the adhesive comprises the reaction product of 6 to 24 wt.% modifier and 4 to 16 wt.% cyanate ester, 0.01 to 0.06 wt. % metal-containing curing catalyst, 0.5 to 2 wt. % alkylphenol and up to 90 wt.% silver flake and/or powder. Where alkylphenol and/or metal containing catalyst are present as little as 4 to 20% silver may be sufficient. Where these curing catalysts are absent 60 to 90 wt. % silver may be needed to impart rapid curability to the adhesive formulation.
A novel card in accordance with the invention, for processing in a computer, comprises a semiconductor device enveloped within the card and adhered with a flexible adhesive to a substrate. The substrate is advantageously a flexible organic polymeric substrate and/or a lead frame or metal conductor. The adhesive comprises the reaction product of cyanate ester and modifier, as described above, having a glass transition temperature of less than about 25°C, and which may include an alkylphenol, a metal-containing curing catalyst and/or silver in the form of flake and/or powder.
Brief Description of the Drawings
Figure 1 is a graph showing the relationship between the percentage of modifier, i.e., flexibilizer and radius of curvature, ("ROC");
Figure 2 is a graph of die stress against ROC; and
Figure 3 is a schematic view partly in section of a card within which one or more semiconductor devices are enveloped and showing such devices bonded to a substrate.
Detailed Description of the Invention
As has been previously explained, a flexible adhesive is needed for a number of applications where semiconductor devices with large surface areas are attached to flexible substrates, particularly where there is a significant difference between the thermal expansion coefficients of the silicon of the semiconductor device and the substrates. In such cases, a low-stress die attach adhesive is required for maximum performance. This is especially important where the semiconductor device is to be attached to lead frames, such as copper lead frames, and polymeric substrates such as polyester, polyamide films, etc. If a conventional rigid adhesive such as epoxy referred to in the aforementioned Steinegger article is used in the above described applications, the thermally induced tensile stress imparted to the surface of the semiconductor die is so high that it usually results in a silicon fracture.
To assess the phenomenon involved it is necessary to measure the die stress. One such method is by determining the radius of curvature ("ROC"). A stress free die would be flat and would have a very large radius of curvature. The relationship between tensile stress imparted on the die surface and the radius of curvature is illustrated in Figure 1. Since the tensile stress of silicon is about 100 MPa, an ROC value of about 1 meter or above is advantageous to eliminate silicon fracture with dies of customary size.
Die attach adhesive compositions including cyanate ester and silver do not give the flexible properties needed for the above applications. However, flexible properties can be achieved by reacting cyanate esters with at least one elastomeric and thermoplastic modifier from the group of hydroxyl (-OH), amine (NH) or epoxide reactive functional groups, or mixtures thereof by, for example, grafting such group to cyanate ester molecular structures.
To illustrate the foregoing, blends of Tg flexible epoxy and cyanate ester resin undergo the following reactions:
N
// \ 1) 3 R-O-C≡N → R-O-C C-O-R Cyanurate
I I
N N w /
OR
2) R-0-C=N + R' Oxazoline
Figure imgf000008_0001
R R'OH [
3 ) N R'-CH-CH2 * H - (-θ-CH-CH2-) -OR» Polyetherif ication \ / N.
O
The effect of flexible epoxy on ROC is shown in Figure 2. As can be seen, a mixture of at least 50% epoxy gives acceptable performance and the cyanate ester i this mixture also acts as curing agent for the epoxy. However, at least about
15% cyanate ester is needed in the adhesive formulation to provide satisfactory curing in this system. Other elastomeric modifiers containing hydroxyl reactive groups, including hydroxyl terminated butadiene and butadiene-acrylonitrile copolymers, such as "HYCAR" sold by B.F. Goodrich and "V_TEL-3600" which is a saturated copolyester resin with a Tg of -11°C, are useful as well as amine functional groups such as polyurethane, elastomer, urethane acrylate, silicone imides, etc.
All of the foregoing modifiers have proven to be miscible with cyanate ester in the uncured state. During curing, the system is phase-separated, forming a co- continuous structure of hard and soft domains composed of cyanate ester-rich and elastomer-rich agglomerates. This system exhibits many advantageous properties, such as increased flexibility due to the soft modifier, while maximizing adhesive strength at high temperature.
The following are examples of the flexible adhesive formulation: EXAMPLES I-IV
Figure imgf000009_0001
EXAMPLE V
Figure imgf000009_0002
A so-called "smart card" is shown in the schematic illustration depicted in Figure 3. As can be seen, a card 10, usually made of plastic, includes a metal conductor 12 to which is bonded a semiconductor device 14. Glass fiber reinforced polyester pads 16 may be included and the entire device is encapsulated, such as within an epoxy resin 18. The epoxy resin may be ground flat to produce a thin plastic card. The adhesive formulation of the present invention is especially suitable for bonding the semiconductor device to a substrate because it is capable of being cured at comparatively low temperatures of 100 to 130 °C and has very good adhesive strength while imparting low stress on the die. It is highly desirable for smart card application to employ a die attach adhesive capable of being cured at temperatures not substantially greater than about 130 °C. The die may be attached to a lead frame, such as a copper lead frame in which case the low temperature curing adhesive minimizes oxidation of the copper and thereby eliminates the need of nitrogen or other inert atmosphere such as is often used in curing ovens.
The following examples are of flexible adhesive compositions used to bond semiconductor devices suitable for smart card manufacture.
TABLE I
Figure imgf000010_0001
The cyanate ester Arocy L10 is available from Rhone-Poulenc of Louisville, Kentucky. The modified bisphenol epoxy resin such as XB 4122 or XUGY 376 is a flexible epoxy supplied by Ciba Geigy. The catalyst system is a solution of copper naphthenate or copper acetylacetonate in nonylphenol. The silver flake has the same physical properties described in the previous examples. Adhesive strength results appear in the following table.
TABLE II
Figure imgf000011_0001
The following is another example of a low curing adhesive formulation:
TABLE III
Figure imgf000011_0002
The catalysts in the foregoing system may be copper naphthenate or copper acetylacetonate, nonylphenol and silver. The formulation in Example III was cured at 100°C for 15 minutes and exhibited an adhesive strength of over 30 Kg for a semiconductor die X150 attached on a copper lead frame.
It is apparent from the foregoing that various changes and modifications may be made without departing from the spirit of the invention. Accordingly, the scope of the invention should be limited only by the appended claims wherein what is claimed is:

Claims

1. A method of making a cyanate ester containing material flexible which comprises reacting the cyanate ester with at least one flexibilizer from the group of hydroxyl, amine and epoxide reactive functional groups, or mixtures thereof.
2. A flexible adhesive formulation comprising the reaction product of a cyanate ester-containing material and at least one flexibilizer from the group consisting of hydroxyl, amine and epoxide reactive functional groups, and mixtures thereof, said cyanate ester comprising at least 15 wt. % of the mixture to be reacted and said flexibilizer having a glass transition temperature less than about 25°C.
3. A flexible adhesive formulation according to claim 2 further comprising silver in an amount sufficient to function as a curing catalyst and to render said adhesive curable in not greater than 5 minutes at 200°C.
4. A flexible adhesive formulation according to claim 2 further comprising an alkylphenol, a metal-containing curing catalyst and an electrically and/or thermally conductive filler.
5. flexible adhesive formulation according to claim 4 wherein said filler comprises silver in an amount of 60 to 90 wt. % of the formulation.
6. A semiconductor device adhered with an adhesive to a substrate from the group of flexible organic polymeric substrates and lead frames, said adhesive comprising a cyanate ester vehicle rendered flexible by reaction with one of hydroxyl, amine, and epoxide reactive functional groups, or mixtures thereof, and silver in an amount sufficient to function as a curing catalyst and to enable said adhesive to be cured in not greater than 5 minutes at 200°C.
7. A semiconductor device according to claim 6 wherein said adhesive contains at least one material from the group consisting of thermally and/or electrically conductive fillers.
8. A semiconductor device according to claim 6 wherein said adhesive further includes an alkylphenol. 9. A semiconductor device according to claim 6 wherein said adhesive further includes a metal containing co-curing catalyst.
10. A method of rendering a cyanate ester containing composition flexible which comprises adding to the cyanate ester at least one of hydroxyl, amine, and epoxide reactive functional groups, or mixtures thereof by grafting such group to the cyanate ester molecular structure.
11. A card for processing in a computer, said card having a semiconductor device enveloped therein and adhered with an adhesive to a substrate from the group of flexible organic polymeric substrates and leadframes, said adhesive comprising a flexible resin with a glass transition temperature of less than about 25 °C, a cyanate ester vehicle containing at least one of hydroxyl, amine, and epoxide reactive functional groups, an alkylphenol, a metal containing curing catalyst and a thermally and/or electrically conductive filler.
12. A flexible adhesive formulation according to claim 4 comprising 0.01 to 0.06 wt.% metal curing catalyst, 0.5 to 2 wt.% alkylphenol and up to 90 wt.% silver.
13. A flexible adhesive formulation according to claim 12 conr. rising 4 ... 20 wt.% silver.
14. A flexible adhesive formulation according to claim * further comprising an electrically and/or thermally conductive filler.
15. A flexible adhesive formulation according to claim 14 comprising 60 to 90 wt. % silver.
16. A flexible adhesive formulation according to claim 2 further comprising up to 90 wt. % silver. AMENDED CLAIMS
[receive by the International Bureau on 10 August 1993 (10.08.93); original claim 2 amended; other claims unchanged (2 pages)]
1. A method of making a cyanate ester containing material flexible which comprises reacting the cyanate ester with at least one flexibilizer from the group of hydroxyl, amine and epoxide reactive functional groups, or mixtures thereof.
2. A flexible adhesive formulation comprising the reaction product of a cyanate ester-containing material and at least one flexibilizer miscible with cyanate ester in the uncured state selected from the group consisting of elastomeric and thermoplastic modifiers selected from the group consisting of hydroxyl, amine, and epoxide reactive functional group containing compounds, and mixtures thereof, said cyanate ester comprising at least 15 wt.% of the mixture to be reacted and said flexibilizer having a glass transition temperature less than about 25°C.
3. A flexible adhesive formulation according to claim 2 further comprising silver in an amount sufficient to function as a curing catalyst and to render said adhesive curable in not greater than 5 minutes at 200°C.
4. A flexible adhesive formulation according to claim 2 further comprising an alkylphenol, a metal-containing curing catalyst and an electrically and/or thermally conductive filler.
5. A flexible adhesive formulation according to claim 4 wherein said filler comprises silver in an amount of 60 to 90 wt. % of the formulation.
6. A semiconductor device adhered with an adhesive to a substrate from the group of flexible organic polymeric substrates and lead frames, said adhesive comprising a cyanate ester vehicle rendered flexible by reaction with one of hydroxyl, amine, and epoxide reactive functional groups, or mixtures thereof, and silver in an amount sufficient to function as a curing catalyst and to enable said adhesive to be cured in not greater than 5 minutes at 200°C.
7. A semiconductor device according to claim 6 wherein said adhesive contains at least one material from the group consisting of thermally and/or electrically conductive fillers. 8. A semiconductor device according to claim 6 wherein said adhesive further includes an alkylphenol.
9. A semiconductor device according to claim 6 wherein said adhesive further includes a metal containing co-curing catalyst.
10. A method of rendering a cyanate ester containing composition flexible which comprises adding to the cyanate ester at least one of hydroxyl, amine, and epoxide reactive functional groups, or mixtures thereof by grafting such group to the cyanate ester molecular structure.
11. A card for processing in a computer, said card having a semiconductor device enveloped therein and adhered with an adhesive to a substrate from the group of flexible organic polymeric substrates and leadframes, said adhesive comprising a flexible resin with a glass transition temperature of less than about 25°C, a cyanate ester vehicle containing at least one of hydroxyl, amine, and epoxide reactive functional groups, an alkylphenol, a metal containing curing catalyst and a thermally and/or electrically conductive filler.
12. A flexible adhesive formulation according to claim 4 comprising
0.01 to 0.06 wt.% metal curing catalyst, 0.5 to 2 wt.% alkylphenol and up to 90 wt.% silver.
13. A flexible adhesive formulation according to claim 12 comprising 4 to 20 wt.% silver.
14. A flexible adhesive formulation according to claim 2 further comprising an electrically and/or thermally conductive filler.
15. A flexible adhesive formulation according to claim 14 comprising 60 to 90 wt.% silver.
16. A flexible adhesive formulation according to claim 2 further comprising up to 90 wt. % silver.
PCT/US1993/001704 1992-02-28 1993-02-25 Low temperature flexible die attach adhesive and articles using same WO1993016987A1 (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5489637A (en) * 1992-05-28 1996-02-06 Johnson Matthey Inc Low temperature flexible die attach adhesive and articles using same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4552690A (en) * 1983-06-23 1985-11-12 Mitsubishi Gas Chemical Company, Inc. Electrically conductive resin composition
US5150195A (en) * 1990-10-24 1992-09-22 Johnson Matthey Inc. Rapid-curing adhesive formulation for semiconductor devices

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4552690A (en) * 1983-06-23 1985-11-12 Mitsubishi Gas Chemical Company, Inc. Electrically conductive resin composition
US5150195A (en) * 1990-10-24 1992-09-22 Johnson Matthey Inc. Rapid-curing adhesive formulation for semiconductor devices

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5612403A (en) * 1990-10-24 1997-03-18 Johnson Matthey, Inc. Low temperature flexible die attach adhesive and articles using same
US5489637A (en) * 1992-05-28 1996-02-06 Johnson Matthey Inc Low temperature flexible die attach adhesive and articles using same

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