WO1991006116A1 - Method of preparing silicon carbide surfaces for crystal growth - Google Patents
Method of preparing silicon carbide surfaces for crystal growth Download PDFInfo
- Publication number
- WO1991006116A1 WO1991006116A1 PCT/US1990/004398 US9004398W WO9106116A1 WO 1991006116 A1 WO1991006116 A1 WO 1991006116A1 US 9004398 W US9004398 W US 9004398W WO 9106116 A1 WO9106116 A1 WO 9106116A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- silicon carbide
- plasma
- gas
- thin film
- generating
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02529—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02378—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02433—Crystal orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02609—Crystal orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/465—Chemical or electrical treatment, e.g. electrolytic etching
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019920700858A KR0163411B1 (en) | 1989-10-13 | 1990-08-06 | Method of preparing silicon carbide surfaces for crystal growth |
DE69013928T DE69013928T2 (en) | 1989-10-13 | 1990-08-06 | METHOD FOR PREPARING SILICON CARBIDE SURFACES FOR CRYSTAL GROWTH. |
EP90912478A EP0495787B1 (en) | 1989-10-13 | 1990-08-06 | Method of preparing silicon carbide surfaces for crystal growth |
CA002069309A CA2069309C (en) | 1989-10-13 | 1990-08-06 | Method of preparing silicon carbide surfaces for crystal growth |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/421,375 US4946547A (en) | 1989-10-13 | 1989-10-13 | Method of preparing silicon carbide surfaces for crystal growth |
US421,375 | 1989-10-13 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1991006116A1 true WO1991006116A1 (en) | 1991-05-02 |
Family
ID=23670252
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1990/004398 WO1991006116A1 (en) | 1989-10-13 | 1990-08-06 | Method of preparing silicon carbide surfaces for crystal growth |
Country Status (12)
Country | Link |
---|---|
US (1) | US4946547A (en) |
EP (1) | EP0495787B1 (en) |
JP (1) | JP2771697B2 (en) |
KR (1) | KR0163411B1 (en) |
CN (1) | CN1030674C (en) |
AT (1) | ATE113758T1 (en) |
AU (1) | AU6180690A (en) |
CA (1) | CA2069309C (en) |
DE (1) | DE69013928T2 (en) |
MX (1) | MX173786B (en) |
MY (1) | MY107059A (en) |
WO (1) | WO1991006116A1 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2000039371A1 (en) * | 1998-12-25 | 2000-07-06 | Showa Denko K. K. | Method of manufacturing single-crystal silicon carbide |
US6270573B1 (en) | 1997-08-27 | 2001-08-07 | Matsushita Electric Industrial Co., Ltd. | Silicon carbide substrate, and method for producing the substrate, and semiconductor device utilizing the substrate |
US7678700B2 (en) | 2006-09-05 | 2010-03-16 | Cabot Microelectronics Corporation | Silicon carbide polishing method utilizing water-soluble oxidizers |
US7998866B2 (en) | 2006-09-05 | 2011-08-16 | Cabot Microelectronics Corporation | Silicon carbide polishing method utilizing water-soluble oxidizers |
Families Citing this family (383)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7235819B2 (en) * | 1991-03-18 | 2007-06-26 | The Trustees Of Boston University | Semiconductor device having group III nitride buffer layer and growth layers |
EP0576566B1 (en) * | 1991-03-18 | 1999-05-26 | Trustees Of Boston University | A method for the preparation and doping of highly insulating monocrystalline gallium nitride thin films |
US5633192A (en) * | 1991-03-18 | 1997-05-27 | Boston University | Method for epitaxially growing gallium nitride layers |
US5248385A (en) * | 1991-06-12 | 1993-09-28 | The United States Of America, As Represented By The Administrator, National Aeronautics And Space Administration | Process for the homoepitaxial growth of single-crystal silicon carbide films on silicon carbide wafers |
WO1992022922A2 (en) * | 1991-06-12 | 1992-12-23 | Case Western Reserve University | Process for the controlled growth of single-crystal films of silicon carbide polytypes on silicon carbide wafers |
US5492752A (en) * | 1992-12-07 | 1996-02-20 | Oregon Graduate Institute Of Science And Technology | Substrates for the growth of 3C-silicon carbide |
CA2113336C (en) * | 1993-01-25 | 2001-10-23 | David J. Larkin | Compound semi-conductors and controlled doping thereof |
US5709745A (en) * | 1993-01-25 | 1998-01-20 | Ohio Aerospace Institute | Compound semi-conductors and controlled doping thereof |
US5686737A (en) * | 1994-09-16 | 1997-11-11 | Cree Research, Inc. | Self-aligned field-effect transistor for high frequency applications |
DE19505906A1 (en) * | 1995-02-21 | 1996-08-22 | Siemens Ag | Process for damaging the back of a semiconductor wafer with the front of the wafer protected |
US5972801A (en) * | 1995-11-08 | 1999-10-26 | Cree Research, Inc. | Process for reducing defects in oxide layers on silicon carbide |
EP0781619A1 (en) | 1995-12-15 | 1997-07-02 | Cree Research, Inc. | Method of making silicone carbide wafers from silicon carbide bulk crystals |
EP0844649A3 (en) * | 1996-11-20 | 1999-10-06 | Nec Corporation | A method for boron contamination reduction in IC fabrication |
US5895583A (en) * | 1996-11-20 | 1999-04-20 | Northrop Grumman Corporation | Method of preparing silicon carbide wafers for epitaxial growth |
ATE550461T1 (en) * | 1997-04-11 | 2012-04-15 | Nichia Corp | GROWTH METHOD FOR A NITRIDE SEMICONDUCTOR |
AU747260B2 (en) | 1997-07-25 | 2002-05-09 | Nichia Chemical Industries, Ltd. | Nitride semiconductor device |
US6051849A (en) * | 1998-02-27 | 2000-04-18 | North Carolina State University | Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer |
US6608327B1 (en) | 1998-02-27 | 2003-08-19 | North Carolina State University | Gallium nitride semiconductor structure including laterally offset patterned layers |
US6265289B1 (en) * | 1998-06-10 | 2001-07-24 | North Carolina State University | Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby |
US6306675B1 (en) * | 1998-10-09 | 2001-10-23 | Arizona Board Of Regents Acting On Behalf Of Arizona State University | Method for forming a low-defect epitaxial layer in the fabrication of semiconductor devices |
US6177688B1 (en) | 1998-11-24 | 2001-01-23 | North Carolina State University | Pendeoepitaxial gallium nitride semiconductor layers on silcon carbide substrates |
US6255198B1 (en) * | 1998-11-24 | 2001-07-03 | North Carolina State University | Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby |
JP3770014B2 (en) | 1999-02-09 | 2006-04-26 | 日亜化学工業株式会社 | Nitride semiconductor device |
EP1168539B1 (en) | 1999-03-04 | 2009-12-16 | Nichia Corporation | Nitride semiconductor laser device |
US6521514B1 (en) | 1999-11-17 | 2003-02-18 | North Carolina State University | Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates |
US8829546B2 (en) * | 1999-11-19 | 2014-09-09 | Cree, Inc. | Rare earth doped layer or substrate for light conversion |
US6614056B1 (en) | 1999-12-01 | 2003-09-02 | Cree Lighting Company | Scalable led with improved current spreading structures |
US6410942B1 (en) | 1999-12-03 | 2002-06-25 | Cree Lighting Company | Enhanced light extraction through the use of micro-LED arrays |
JP5965095B2 (en) | 1999-12-03 | 2016-08-10 | クリー インコーポレイテッドCree Inc. | Light-emitting diode with improved light extraction by internal and external optical elements |
US6380108B1 (en) | 1999-12-21 | 2002-04-30 | North Carolina State University | Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts, and gallium nitride semiconductor structures fabricated thereby |
US6403451B1 (en) | 2000-02-09 | 2002-06-11 | Noerh Carolina State University | Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts |
US6261929B1 (en) | 2000-02-24 | 2001-07-17 | North Carolina State University | Methods of forming a plurality of semiconductor layers using spaced trench arrays |
DE60134581D1 (en) * | 2000-04-07 | 2008-08-07 | Hoya Corp | Process for producing silicon carbide single crystal |
US6670278B2 (en) | 2001-03-30 | 2003-12-30 | Lam Research Corporation | Method of plasma etching of silicon carbide |
US20040029365A1 (en) * | 2001-05-07 | 2004-02-12 | Linthicum Kevin J. | Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby |
JP3761418B2 (en) * | 2001-05-10 | 2006-03-29 | Hoya株式会社 | Compound crystal and process for producing the same |
US6849882B2 (en) | 2001-05-11 | 2005-02-01 | Cree Inc. | Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer |
US20030015708A1 (en) | 2001-07-23 | 2003-01-23 | Primit Parikh | Gallium nitride based diodes with low forward voltage and low reverse current operation |
CA2454269C (en) | 2001-07-24 | 2015-07-07 | Primit Parikh | Insulating gate algan/gan hemt |
JP2003068655A (en) * | 2001-08-27 | 2003-03-07 | Hoya Corp | Production method for compound single crystal |
US7030428B2 (en) * | 2001-12-03 | 2006-04-18 | Cree, Inc. | Strain balanced nitride heterojunction transistors |
US7497922B2 (en) | 2002-05-08 | 2009-03-03 | Btu International, Inc. | Plasma-assisted gas production |
US7465362B2 (en) | 2002-05-08 | 2008-12-16 | Btu International, Inc. | Plasma-assisted nitrogen surface-treatment |
US7432470B2 (en) | 2002-05-08 | 2008-10-07 | Btu International, Inc. | Surface cleaning and sterilization |
US7445817B2 (en) | 2002-05-08 | 2008-11-04 | Btu International Inc. | Plasma-assisted formation of carbon structures |
CN100505975C (en) | 2002-05-08 | 2009-06-24 | Btu国际公司 | Plasma-assisted coating |
US7638727B2 (en) | 2002-05-08 | 2009-12-29 | Btu International Inc. | Plasma-assisted heat treatment |
US7494904B2 (en) | 2002-05-08 | 2009-02-24 | Btu International, Inc. | Plasma-assisted doping |
US7560657B2 (en) | 2002-05-08 | 2009-07-14 | Btu International Inc. | Plasma-assisted processing in a manufacturing line |
US7498066B2 (en) | 2002-05-08 | 2009-03-03 | Btu International Inc. | Plasma-assisted enhanced coating |
US6982204B2 (en) * | 2002-07-16 | 2006-01-03 | Cree, Inc. | Nitride-based transistors and methods of fabrication thereof using non-etched contact recesses |
CN1313867C (en) * | 2002-09-17 | 2007-05-02 | 统宝光电股份有限公司 | Equipment for assembling insulation film used for making LCD of film transistor |
US20040134418A1 (en) * | 2002-11-08 | 2004-07-15 | Taisuke Hirooka | SiC substrate and method of manufacturing the same |
US7189940B2 (en) | 2002-12-04 | 2007-03-13 | Btu International Inc. | Plasma-assisted melting |
US6825559B2 (en) | 2003-01-02 | 2004-11-30 | Cree, Inc. | Group III nitride based flip-chip intergrated circuit and method for fabricating |
US6987281B2 (en) * | 2003-02-13 | 2006-01-17 | Cree, Inc. | Group III nitride contact structures for light emitting devices |
US6952024B2 (en) * | 2003-02-13 | 2005-10-04 | Cree, Inc. | Group III nitride LED with silicon carbide cladding layer |
US7170097B2 (en) * | 2003-02-14 | 2007-01-30 | Cree, Inc. | Inverted light emitting diode on conductive substrate |
US7898047B2 (en) * | 2003-03-03 | 2011-03-01 | Samsung Electronics Co., Ltd. | Integrated nitride and silicon carbide-based devices and methods of fabricating integrated nitride-based devices |
US7112860B2 (en) * | 2003-03-03 | 2006-09-26 | Cree, Inc. | Integrated nitride-based acoustic wave devices and methods of fabricating integrated nitride-based acoustic wave devices |
KR101148332B1 (en) * | 2003-04-30 | 2012-05-25 | 크리, 인코포레이티드 | High powered light emitter packages with compact optics |
US7915085B2 (en) * | 2003-09-18 | 2011-03-29 | Cree, Inc. | Molded chip fabrication method |
US7018554B2 (en) | 2003-09-22 | 2006-03-28 | Cree, Inc. | Method to reduce stacking fault nucleation sites and reduce forward voltage drift in bipolar devices |
US6972438B2 (en) * | 2003-09-30 | 2005-12-06 | Cree, Inc. | Light emitting diode with porous SiC substrate and method for fabricating |
US7135715B2 (en) * | 2004-01-07 | 2006-11-14 | Cree, Inc. | Co-doping for fermi level control in semi-insulating Group III nitrides |
US7045404B2 (en) * | 2004-01-16 | 2006-05-16 | Cree, Inc. | Nitride-based transistors with a protective layer and a low-damage recess and methods of fabrication thereof |
US7901994B2 (en) * | 2004-01-16 | 2011-03-08 | Cree, Inc. | Methods of manufacturing group III nitride semiconductor devices with silicon nitride layers |
US7170111B2 (en) * | 2004-02-05 | 2007-01-30 | Cree, Inc. | Nitride heterojunction transistors having charge-transfer induced energy barriers and methods of fabricating the same |
US7612390B2 (en) * | 2004-02-05 | 2009-11-03 | Cree, Inc. | Heterojunction transistors including energy barriers |
US7419912B2 (en) * | 2004-04-01 | 2008-09-02 | Cree, Inc. | Laser patterning of light emitting devices |
US7825006B2 (en) | 2004-05-06 | 2010-11-02 | Cree, Inc. | Lift-off process for GaN films formed on SiC substrates and devices fabricated using the method |
US7432142B2 (en) * | 2004-05-20 | 2008-10-07 | Cree, Inc. | Methods of fabricating nitride-based transistors having regrown ohmic contact regions |
US7084441B2 (en) | 2004-05-20 | 2006-08-01 | Cree, Inc. | Semiconductor devices having a hybrid channel layer, current aperture transistors and methods of fabricating same |
US7417266B1 (en) | 2004-06-10 | 2008-08-26 | Qspeed Semiconductor Inc. | MOSFET having a JFET embedded as a body diode |
US7795623B2 (en) * | 2004-06-30 | 2010-09-14 | Cree, Inc. | Light emitting devices having current reducing structures and methods of forming light emitting devices having current reducing structures |
US9368428B2 (en) * | 2004-06-30 | 2016-06-14 | Cree, Inc. | Dielectric wafer level bonding with conductive feed-throughs for electrical connection and thermal management |
US7534633B2 (en) * | 2004-07-02 | 2009-05-19 | Cree, Inc. | LED with substrate modifications for enhanced light extraction and method of making same |
US7238560B2 (en) * | 2004-07-23 | 2007-07-03 | Cree, Inc. | Methods of fabricating nitride-based transistors with a cap layer and a recessed gate |
US20060017064A1 (en) * | 2004-07-26 | 2006-01-26 | Saxler Adam W | Nitride-based transistors having laterally grown active region and methods of fabricating same |
US7393790B2 (en) * | 2004-09-10 | 2008-07-01 | Cree, Inc. | Method of manufacturing carrier wafer and resulting carrier wafer structures |
US7217583B2 (en) * | 2004-09-21 | 2007-05-15 | Cree, Inc. | Methods of coating semiconductor light emitting elements by evaporating solvent from a suspension |
US8174037B2 (en) * | 2004-09-22 | 2012-05-08 | Cree, Inc. | High efficiency group III nitride LED with lenticular surface |
US7300519B2 (en) * | 2004-11-17 | 2007-11-27 | Cree, Inc. | Reduction of subsurface damage in the production of bulk SiC crystals |
US7456443B2 (en) * | 2004-11-23 | 2008-11-25 | Cree, Inc. | Transistors having buried n-type and p-type regions beneath the source region |
US7709859B2 (en) * | 2004-11-23 | 2010-05-04 | Cree, Inc. | Cap layers including aluminum nitride for nitride-based transistors |
US7161194B2 (en) * | 2004-12-06 | 2007-01-09 | Cree, Inc. | High power density and/or linearity transistors |
US7355215B2 (en) * | 2004-12-06 | 2008-04-08 | Cree, Inc. | Field effect transistors (FETs) having multi-watt output power at millimeter-wave frequencies |
US7563321B2 (en) * | 2004-12-08 | 2009-07-21 | Cree, Inc. | Process for producing high quality large size silicon carbide crystals |
US7236053B2 (en) * | 2004-12-31 | 2007-06-26 | Cree, Inc. | High efficiency switch-mode power amplifier |
US7436039B2 (en) * | 2005-01-06 | 2008-10-14 | Velox Semiconductor Corporation | Gallium nitride semiconductor device |
US9070850B2 (en) | 2007-10-31 | 2015-06-30 | Cree, Inc. | Light emitting diode package and method for fabricating same |
US7821023B2 (en) | 2005-01-10 | 2010-10-26 | Cree, Inc. | Solid state lighting component |
US9793247B2 (en) * | 2005-01-10 | 2017-10-17 | Cree, Inc. | Solid state lighting component |
US7335920B2 (en) * | 2005-01-24 | 2008-02-26 | Cree, Inc. | LED with current confinement structure and surface roughening |
US7932111B2 (en) * | 2005-02-23 | 2011-04-26 | Cree, Inc. | Substrate removal process for high light extraction LEDs |
US7465967B2 (en) | 2005-03-15 | 2008-12-16 | Cree, Inc. | Group III nitride field effect transistors (FETS) capable of withstanding high temperature reverse bias test conditions |
US7626217B2 (en) * | 2005-04-11 | 2009-12-01 | Cree, Inc. | Composite substrates of conductive and insulating or semi-insulating group III-nitrides for group III-nitride devices |
US8575651B2 (en) * | 2005-04-11 | 2013-11-05 | Cree, Inc. | Devices having thick semi-insulating epitaxial gallium nitride layer |
US8221549B2 (en) * | 2005-04-22 | 2012-07-17 | Bridgestone Corporation | Silicon carbide single crystal wafer and producing method thereof |
US7615774B2 (en) * | 2005-04-29 | 2009-11-10 | Cree.Inc. | Aluminum free group III-nitride based high electron mobility transistors |
US7544963B2 (en) * | 2005-04-29 | 2009-06-09 | Cree, Inc. | Binary group III-nitride based high electron mobility transistors |
US9412926B2 (en) * | 2005-06-10 | 2016-08-09 | Cree, Inc. | High power solid-state lamp |
US9331192B2 (en) * | 2005-06-29 | 2016-05-03 | Cree, Inc. | Low dislocation density group III nitride layers on silicon carbide substrates and methods of making the same |
US20070018199A1 (en) | 2005-07-20 | 2007-01-25 | Cree, Inc. | Nitride-based transistors and fabrication methods with an etch stop layer |
US20070018198A1 (en) * | 2005-07-20 | 2007-01-25 | Brandes George R | High electron mobility electronic device structures comprising native substrates and methods for making the same |
US8674375B2 (en) * | 2005-07-21 | 2014-03-18 | Cree, Inc. | Roughened high refractive index layer/LED for high light extraction |
EP2312634B1 (en) | 2005-09-07 | 2019-12-25 | Cree, Inc. | Transistors with fluorine treatment |
US8026568B2 (en) | 2005-11-15 | 2011-09-27 | Velox Semiconductor Corporation | Second Schottky contact metal layer to improve GaN Schottky diode performance |
US7419892B2 (en) * | 2005-12-13 | 2008-09-02 | Cree, Inc. | Semiconductor devices including implanted regions and protective layers and methods of forming the same |
TWI421438B (en) | 2005-12-21 | 2014-01-01 | 克里公司 | Lighting device |
US7709269B2 (en) | 2006-01-17 | 2010-05-04 | Cree, Inc. | Methods of fabricating transistors including dielectrically-supported gate electrodes |
US7592211B2 (en) | 2006-01-17 | 2009-09-22 | Cree, Inc. | Methods of fabricating transistors including supported gate electrodes |
EP1985884B1 (en) * | 2006-02-08 | 2012-10-24 | Hitachi, Ltd. | Electric brake |
US7566918B2 (en) * | 2006-02-23 | 2009-07-28 | Cree, Inc. | Nitride based transistors for millimeter wave operation |
US7388236B2 (en) * | 2006-03-29 | 2008-06-17 | Cree, Inc. | High efficiency and/or high power density wide bandgap transistors |
USD738832S1 (en) | 2006-04-04 | 2015-09-15 | Cree, Inc. | Light emitting diode (LED) package |
US8969908B2 (en) * | 2006-04-04 | 2015-03-03 | Cree, Inc. | Uniform emission LED package |
US9780268B2 (en) | 2006-04-04 | 2017-10-03 | Cree, Inc. | Submount based surface mount device (SMD) light emitter components and methods |
US9335006B2 (en) | 2006-04-18 | 2016-05-10 | Cree, Inc. | Saturated yellow phosphor converted LED and blue converted red LED |
US11210971B2 (en) | 2009-07-06 | 2021-12-28 | Cree Huizhou Solid State Lighting Company Limited | Light emitting diode display with tilted peak emission pattern |
US8748915B2 (en) | 2006-04-24 | 2014-06-10 | Cree Hong Kong Limited | Emitter package with angled or vertical LED |
US9040398B2 (en) * | 2006-05-16 | 2015-05-26 | Cree, Inc. | Method of fabricating seminconductor devices including self aligned refractory contacts |
WO2007139894A2 (en) | 2006-05-26 | 2007-12-06 | Cree Led Lighting Solutions, Inc. | Solid state light emitting device and method of making same |
US7943952B2 (en) * | 2006-07-31 | 2011-05-17 | Cree, Inc. | Method of uniform phosphor chip coating and LED package fabricated using method |
US7728402B2 (en) | 2006-08-01 | 2010-06-01 | Cree, Inc. | Semiconductor devices including schottky diodes with controlled breakdown |
US8432012B2 (en) | 2006-08-01 | 2013-04-30 | Cree, Inc. | Semiconductor devices including schottky diodes having overlapping doped regions and methods of fabricating same |
WO2008020911A2 (en) | 2006-08-17 | 2008-02-21 | Cree, Inc. | High power insulated gate bipolar transistors |
EP2060155A2 (en) * | 2006-08-23 | 2009-05-20 | Cree Led Lighting Solutions, Inc. | Lighting device and lighting method |
US20100224890A1 (en) * | 2006-09-18 | 2010-09-09 | Cree, Inc. | Light emitting diode chip with electrical insulation element |
US9018619B2 (en) * | 2006-10-09 | 2015-04-28 | Cree, Inc. | Quantum wells for light conversion |
US10873002B2 (en) * | 2006-10-20 | 2020-12-22 | Cree, Inc. | Permanent wafer bonding using metal alloy preform discs |
US8823057B2 (en) | 2006-11-06 | 2014-09-02 | Cree, Inc. | Semiconductor devices including implanted regions for providing low-resistance contact to buried layers and related devices |
US10295147B2 (en) * | 2006-11-09 | 2019-05-21 | Cree, Inc. | LED array and method for fabricating same |
EP1921669B1 (en) | 2006-11-13 | 2015-09-02 | Cree, Inc. | GaN based HEMTs with buried field plates |
US7692263B2 (en) | 2006-11-21 | 2010-04-06 | Cree, Inc. | High voltage GaN transistors |
US9318327B2 (en) | 2006-11-28 | 2016-04-19 | Cree, Inc. | Semiconductor devices having low threading dislocations and improved light extraction and methods of making the same |
WO2008070607A1 (en) | 2006-12-04 | 2008-06-12 | Cree Led Lighting Solutions, Inc. | Lighting assembly and lighting method |
WO2008070604A1 (en) * | 2006-12-04 | 2008-06-12 | Cree Led Lighting Solutions, Inc. | Lighting device and lighting method |
US7834367B2 (en) | 2007-01-19 | 2010-11-16 | Cree, Inc. | Low voltage diode with reduced parasitic resistance and method for fabricating |
US9159888B2 (en) * | 2007-01-22 | 2015-10-13 | Cree, Inc. | Wafer level phosphor coating method and devices fabricated utilizing method |
US9024349B2 (en) * | 2007-01-22 | 2015-05-05 | Cree, Inc. | Wafer level phosphor coating method and devices fabricated utilizing method |
US9196799B2 (en) * | 2007-01-22 | 2015-11-24 | Cree, Inc. | LED chips having fluorescent substrates with microholes and methods for fabricating |
US8232564B2 (en) * | 2007-01-22 | 2012-07-31 | Cree, Inc. | Wafer level phosphor coating technique for warm light emitting diodes |
US8021904B2 (en) * | 2007-02-01 | 2011-09-20 | Cree, Inc. | Ohmic contacts to nitrogen polarity GaN |
US20080197369A1 (en) | 2007-02-20 | 2008-08-21 | Cree, Inc. | Double flip semiconductor device and method for fabrication |
US8835987B2 (en) | 2007-02-27 | 2014-09-16 | Cree, Inc. | Insulated gate bipolar transistors including current suppressing layers |
US8362503B2 (en) * | 2007-03-09 | 2013-01-29 | Cree, Inc. | Thick nitride semiconductor structures with interlayer structures |
US7825432B2 (en) | 2007-03-09 | 2010-11-02 | Cree, Inc. | Nitride semiconductor structures with interlayer structures |
US7939853B2 (en) * | 2007-03-20 | 2011-05-10 | Power Integrations, Inc. | Termination and contact structures for a high voltage GaN-based heterojunction transistor |
US8212290B2 (en) | 2007-03-23 | 2012-07-03 | Cree, Inc. | High temperature performance capable gallium nitride transistor |
US7982363B2 (en) | 2007-05-14 | 2011-07-19 | Cree, Inc. | Bulk acoustic device and method for fabricating |
US10505083B2 (en) * | 2007-07-11 | 2019-12-10 | Cree, Inc. | Coating method utilizing phosphor containment structure and devices fabricated using same |
US9401461B2 (en) * | 2007-07-11 | 2016-07-26 | Cree, Inc. | LED chip design for white conversion |
EP2171502B1 (en) | 2007-07-17 | 2016-09-14 | Cree, Inc. | Optical elements with internal optical features and methods of fabricating same |
US8111001B2 (en) * | 2007-07-17 | 2012-02-07 | Cree, Inc. | LED with integrated constant current driver |
US11114594B2 (en) * | 2007-08-24 | 2021-09-07 | Creeled, Inc. | Light emitting device packages using light scattering particles of different size |
US9012937B2 (en) | 2007-10-10 | 2015-04-21 | Cree, Inc. | Multiple conversion material light emitting diode package and method of fabricating same |
US9082921B2 (en) | 2007-10-31 | 2015-07-14 | Cree, Inc. | Multi-die LED package |
US9666762B2 (en) | 2007-10-31 | 2017-05-30 | Cree, Inc. | Multi-chip light emitter packages and related methods |
US8866169B2 (en) | 2007-10-31 | 2014-10-21 | Cree, Inc. | LED package with increased feature sizes |
US9172012B2 (en) | 2007-10-31 | 2015-10-27 | Cree, Inc. | Multi-chip light emitter packages and related methods |
US10256385B2 (en) | 2007-10-31 | 2019-04-09 | Cree, Inc. | Light emitting die (LED) packages and related methods |
US7915629B2 (en) * | 2008-12-08 | 2011-03-29 | Cree, Inc. | Composite high reflectivity layer |
US8536584B2 (en) * | 2007-11-14 | 2013-09-17 | Cree, Inc. | High voltage wire bond free LEDS |
US7985970B2 (en) | 2009-04-06 | 2011-07-26 | Cree, Inc. | High voltage low current surface-emitting LED |
US9461201B2 (en) | 2007-11-14 | 2016-10-04 | Cree, Inc. | Light emitting diode dielectric mirror |
US20090142247A1 (en) * | 2007-12-03 | 2009-06-04 | Applied Materials, Inc. | Chemical treatment to reduce machining-induced sub-surface damage in semiconductor processing components comprising silicon carbide |
US8167674B2 (en) * | 2007-12-14 | 2012-05-01 | Cree, Inc. | Phosphor distribution in LED lamps using centrifugal force |
US9431589B2 (en) * | 2007-12-14 | 2016-08-30 | Cree, Inc. | Textured encapsulant surface in LED packages |
US9041285B2 (en) | 2007-12-14 | 2015-05-26 | Cree, Inc. | Phosphor distribution in LED lamps using centrifugal force |
US10008637B2 (en) | 2011-12-06 | 2018-06-26 | Cree, Inc. | Light emitter devices and methods with reduced dimensions and improved light output |
US8637883B2 (en) | 2008-03-19 | 2014-01-28 | Cree, Inc. | Low index spacer layer in LED devices |
US8877524B2 (en) * | 2008-03-31 | 2014-11-04 | Cree, Inc. | Emission tuning methods and devices fabricated utilizing methods |
US7859000B2 (en) * | 2008-04-10 | 2010-12-28 | Cree, Inc. | LEDs using single crystalline phosphor and methods of fabricating same |
US9287469B2 (en) | 2008-05-02 | 2016-03-15 | Cree, Inc. | Encapsulation for phosphor-converted white light emitting diode |
TWI362769B (en) | 2008-05-09 | 2012-04-21 | Univ Nat Chiao Tung | Light emitting device and fabrication method therefor |
US8232558B2 (en) | 2008-05-21 | 2012-07-31 | Cree, Inc. | Junction barrier Schottky diodes with current surge capability |
WO2009148543A2 (en) * | 2008-05-29 | 2009-12-10 | Cree, Inc. | Light source with near field mixing |
US20090311381A1 (en) * | 2008-06-11 | 2009-12-17 | Gardner Susanne | Beverages composed of wine components |
US8240875B2 (en) | 2008-06-25 | 2012-08-14 | Cree, Inc. | Solid state linear array modules for general illumination |
US8384115B2 (en) * | 2008-08-01 | 2013-02-26 | Cree, Inc. | Bond pad design for enhancing light extraction from LED chips |
US9425172B2 (en) * | 2008-10-24 | 2016-08-23 | Cree, Inc. | Light emitter array |
US8017963B2 (en) * | 2008-12-08 | 2011-09-13 | Cree, Inc. | Light emitting diode with a dielectric mirror having a lateral configuration |
US7897419B2 (en) | 2008-12-23 | 2011-03-01 | Cree, Inc. | Color correction for wafer level white LEDs |
US7923739B2 (en) | 2009-06-05 | 2011-04-12 | Cree, Inc. | Solid state lighting device |
US8598602B2 (en) * | 2009-01-12 | 2013-12-03 | Cree, Inc. | Light emitting device packages with improved heat transfer |
US10431567B2 (en) | 2010-11-03 | 2019-10-01 | Cree, Inc. | White ceramic LED package |
US8368112B2 (en) | 2009-01-14 | 2013-02-05 | Cree Huizhou Opto Limited | Aligned multiple emitter package |
JP2010171330A (en) * | 2009-01-26 | 2010-08-05 | Sumco Techxiv株式会社 | Method of manufacturing epitaxial wafer, defect removing method, and the epitaxial wafer |
US8083384B2 (en) | 2009-02-02 | 2011-12-27 | Teledyne Technologies Incorporated | Efficient illumination device for aircraft |
US8476668B2 (en) * | 2009-04-06 | 2013-07-02 | Cree, Inc. | High voltage low current surface emitting LED |
US9093293B2 (en) | 2009-04-06 | 2015-07-28 | Cree, Inc. | High voltage low current surface emitting light emitting diode |
US8529102B2 (en) * | 2009-04-06 | 2013-09-10 | Cree, Inc. | Reflector system for lighting device |
US8741715B2 (en) * | 2009-04-29 | 2014-06-03 | Cree, Inc. | Gate electrodes for millimeter-wave operation and methods of fabrication |
US8294507B2 (en) | 2009-05-08 | 2012-10-23 | Cree, Inc. | Wide bandgap bipolar turn-off thyristor having non-negative temperature coefficient and related control circuits |
US9035328B2 (en) | 2011-02-04 | 2015-05-19 | Cree, Inc. | Light-emitting diode component |
US8629509B2 (en) | 2009-06-02 | 2014-01-14 | Cree, Inc. | High voltage insulated gate bipolar transistors with minority carrier diverter |
US8193848B2 (en) | 2009-06-02 | 2012-06-05 | Cree, Inc. | Power switching devices having controllable surge current capabilities |
US8304783B2 (en) * | 2009-06-03 | 2012-11-06 | Cree, Inc. | Schottky diodes including polysilicon having low barrier heights and methods of fabricating the same |
US8686445B1 (en) | 2009-06-05 | 2014-04-01 | Cree, Inc. | Solid state lighting devices and methods |
US9111778B2 (en) | 2009-06-05 | 2015-08-18 | Cree, Inc. | Light emitting diode (LED) devices, systems, and methods |
US8860043B2 (en) | 2009-06-05 | 2014-10-14 | Cree, Inc. | Light emitting device packages, systems and methods |
US8415692B2 (en) * | 2009-07-06 | 2013-04-09 | Cree, Inc. | LED packages with scattering particle regions |
US8541787B2 (en) | 2009-07-15 | 2013-09-24 | Cree, Inc. | High breakdown voltage wide band-gap MOS-gated bipolar junction transistors with avalanche capability |
US8105889B2 (en) | 2009-07-27 | 2012-01-31 | Cree, Inc. | Methods of fabricating transistors including self-aligned gate electrodes and source/drain regions |
US8598809B2 (en) * | 2009-08-19 | 2013-12-03 | Cree, Inc. | White light color changing solid state lighting and methods |
US8354690B2 (en) | 2009-08-31 | 2013-01-15 | Cree, Inc. | Solid-state pinch off thyristor circuits |
US9362459B2 (en) * | 2009-09-02 | 2016-06-07 | United States Department Of Energy | High reflectivity mirrors and method for making same |
US9312343B2 (en) | 2009-10-13 | 2016-04-12 | Cree, Inc. | Transistors with semiconductor interconnection layers and semiconductor channel layers of different semiconductor materials |
JP5563091B2 (en) * | 2009-10-30 | 2014-07-30 | ウィリアム マーシュ ライス ユニバーシティ | Structured silicon battery anode |
US8511851B2 (en) * | 2009-12-21 | 2013-08-20 | Cree, Inc. | High CRI adjustable color temperature lighting devices |
US8350370B2 (en) * | 2010-01-29 | 2013-01-08 | Cree Huizhou Opto Limited | Wide angle oval light emitting diode package |
US9548206B2 (en) | 2010-02-11 | 2017-01-17 | Cree, Inc. | Ohmic contact structure for group III nitride semiconductor device having improved surface morphology and well-defined edge features |
US8563372B2 (en) * | 2010-02-11 | 2013-10-22 | Cree, Inc. | Methods of forming contact structures including alternating metal and silicon layers and related devices |
US9214352B2 (en) | 2010-02-11 | 2015-12-15 | Cree, Inc. | Ohmic contact to semiconductor device |
US9468070B2 (en) | 2010-02-16 | 2016-10-11 | Cree Inc. | Color control of light emitting devices and applications thereof |
US9117739B2 (en) | 2010-03-08 | 2015-08-25 | Cree, Inc. | Semiconductor devices with heterojunction barrier regions and methods of fabricating same |
US9012938B2 (en) | 2010-04-09 | 2015-04-21 | Cree, Inc. | High reflective substrate of light emitting devices with improved light output |
US9105824B2 (en) | 2010-04-09 | 2015-08-11 | Cree, Inc. | High reflective board or substrate for LEDs |
US8901583B2 (en) | 2010-04-12 | 2014-12-02 | Cree Huizhou Opto Limited | Surface mount device thin package |
US8415671B2 (en) | 2010-04-16 | 2013-04-09 | Cree, Inc. | Wide band-gap MOSFETs having a heterojunction under gate trenches thereof and related methods of forming such devices |
EP2383773B1 (en) | 2010-04-27 | 2013-05-08 | Instytut Technologii Materialów Elektronicznych | Method of electrochemical-mechanical polishing of silicon carbide wafers |
US8329482B2 (en) | 2010-04-30 | 2012-12-11 | Cree, Inc. | White-emitting LED chips and method for making same |
US8648359B2 (en) | 2010-06-28 | 2014-02-11 | Cree, Inc. | Light emitting devices and methods |
US8269244B2 (en) | 2010-06-28 | 2012-09-18 | Cree, Inc. | LED package with efficient, isolated thermal path |
CN103080641A (en) | 2010-07-06 | 2013-05-01 | 克利公司 | Compact optically efficient solid state light source with integrated thermal management |
USD643819S1 (en) | 2010-07-16 | 2011-08-23 | Cree, Inc. | Package for light emitting diode (LED) lighting |
US10546846B2 (en) | 2010-07-23 | 2020-01-28 | Cree, Inc. | Light transmission control for masking appearance of solid state light sources |
US9831393B2 (en) | 2010-07-30 | 2017-11-28 | Cree Hong Kong Limited | Water resistant surface mount device package |
US8764224B2 (en) | 2010-08-12 | 2014-07-01 | Cree, Inc. | Luminaire with distributed LED sources |
US9627361B2 (en) | 2010-10-07 | 2017-04-18 | Cree, Inc. | Multiple configuration light emitting devices and methods |
US8455882B2 (en) | 2010-10-15 | 2013-06-04 | Cree, Inc. | High efficiency LEDs |
US9249952B2 (en) | 2010-11-05 | 2016-02-02 | Cree, Inc. | Multi-configurable, high luminous output light fixture systems, devices and methods |
USD707192S1 (en) | 2010-11-18 | 2014-06-17 | Cree, Inc. | Light emitting device |
USD712850S1 (en) | 2010-11-18 | 2014-09-09 | Cree, Inc. | Light emitter device |
USD721339S1 (en) | 2010-12-03 | 2015-01-20 | Cree, Inc. | Light emitter device |
US8564000B2 (en) | 2010-11-22 | 2013-10-22 | Cree, Inc. | Light emitting devices for light emitting diodes (LEDs) |
US8575639B2 (en) | 2011-02-16 | 2013-11-05 | Cree, Inc. | Light emitting devices for light emitting diodes (LEDs) |
US9490235B2 (en) | 2010-11-22 | 2016-11-08 | Cree, Inc. | Light emitting devices, systems, and methods |
US9300062B2 (en) | 2010-11-22 | 2016-03-29 | Cree, Inc. | Attachment devices and methods for light emitting devices |
US20150062915A1 (en) | 2013-09-05 | 2015-03-05 | Cree, Inc. | Light emitting diode devices and methods with reflective material for increased light output |
US9000470B2 (en) | 2010-11-22 | 2015-04-07 | Cree, Inc. | Light emitter devices |
US8624271B2 (en) | 2010-11-22 | 2014-01-07 | Cree, Inc. | Light emitting devices |
US10267506B2 (en) | 2010-11-22 | 2019-04-23 | Cree, Inc. | Solid state lighting apparatuses with non-uniformly spaced emitters for improved heat distribution, system having the same, and methods having the same |
US9240395B2 (en) | 2010-11-30 | 2016-01-19 | Cree Huizhou Opto Limited | Waterproof surface mount device package and method |
USD706231S1 (en) | 2010-12-03 | 2014-06-03 | Cree, Inc. | Light emitting device |
US10309627B2 (en) | 2012-11-08 | 2019-06-04 | Cree, Inc. | Light fixture retrofit kit with integrated light bar |
US9822951B2 (en) | 2010-12-06 | 2017-11-21 | Cree, Inc. | LED retrofit lens for fluorescent tube |
US8556469B2 (en) | 2010-12-06 | 2013-10-15 | Cree, Inc. | High efficiency total internal reflection optic for solid state lighting luminaires |
US8610140B2 (en) | 2010-12-15 | 2013-12-17 | Cree, Inc. | Light emitting diode (LED) packages, systems, devices and related methods |
USD679842S1 (en) | 2011-01-03 | 2013-04-09 | Cree, Inc. | High brightness LED package |
US9391247B2 (en) | 2010-12-16 | 2016-07-12 | Cree, Inc. | High power LEDs with non-polymer material lenses and methods of making the same |
US9166126B2 (en) | 2011-01-31 | 2015-10-20 | Cree, Inc. | Conformally coated light emitting devices and methods for providing the same |
TW201251140A (en) | 2011-01-31 | 2012-12-16 | Cree Inc | High brightness light emitting diode (LED) packages, systems and methods with improved resin filling and high adhesion |
US9786811B2 (en) | 2011-02-04 | 2017-10-10 | Cree, Inc. | Tilted emission LED array |
CN103348496A (en) | 2011-02-07 | 2013-10-09 | 克利公司 | Components and methods for light emitting diode (LED) lighting |
US9583681B2 (en) | 2011-02-07 | 2017-02-28 | Cree, Inc. | Light emitter device packages, modules and methods |
US8809880B2 (en) | 2011-02-16 | 2014-08-19 | Cree, Inc. | Light emitting diode (LED) chips and devices for providing failure mitigation in LED arrays |
USD702653S1 (en) | 2011-10-26 | 2014-04-15 | Cree, Inc. | Light emitting device component |
US8455908B2 (en) | 2011-02-16 | 2013-06-04 | Cree, Inc. | Light emitting devices |
US8922108B2 (en) | 2011-03-01 | 2014-12-30 | Cree, Inc. | Remote component devices, systems, and methods for use with light emitting devices |
US10147853B2 (en) | 2011-03-18 | 2018-12-04 | Cree, Inc. | Encapsulant with index matched thixotropic agent |
US8680556B2 (en) | 2011-03-24 | 2014-03-25 | Cree, Inc. | Composite high reflectivity layer |
US9263636B2 (en) | 2011-05-04 | 2016-02-16 | Cree, Inc. | Light-emitting diode (LED) for achieving an asymmetric light output |
US9142662B2 (en) | 2011-05-06 | 2015-09-22 | Cree, Inc. | Field effect transistor devices with low source resistance |
US9029945B2 (en) | 2011-05-06 | 2015-05-12 | Cree, Inc. | Field effect transistor devices with low source resistance |
US9673283B2 (en) | 2011-05-06 | 2017-06-06 | Cree, Inc. | Power module for supporting high current densities |
US8777463B2 (en) | 2011-06-23 | 2014-07-15 | Cree, Inc. | Hybrid solid state emitter printed circuit board for use in a solid state directional lamp |
US8757840B2 (en) | 2011-06-23 | 2014-06-24 | Cree, Inc. | Solid state retroreflective directional lamp |
US8616724B2 (en) | 2011-06-23 | 2013-12-31 | Cree, Inc. | Solid state directional lamp including retroreflective, multi-element directional lamp optic |
US8777455B2 (en) | 2011-06-23 | 2014-07-15 | Cree, Inc. | Retroreflective, multi-element design for a solid state directional lamp |
US10243121B2 (en) | 2011-06-24 | 2019-03-26 | Cree, Inc. | High voltage monolithic LED chip with improved reliability |
US9728676B2 (en) | 2011-06-24 | 2017-08-08 | Cree, Inc. | High voltage monolithic LED chip |
US8686429B2 (en) | 2011-06-24 | 2014-04-01 | Cree, Inc. | LED structure with enhanced mirror reflectivity |
US10842016B2 (en) | 2011-07-06 | 2020-11-17 | Cree, Inc. | Compact optically efficient solid state light source with integrated thermal management |
USD700584S1 (en) | 2011-07-06 | 2014-03-04 | Cree, Inc. | LED component |
JP2013026247A (en) * | 2011-07-15 | 2013-02-04 | Sumitomo Electric Ind Ltd | Manufacturing method of semiconductor device |
US10686107B2 (en) | 2011-07-21 | 2020-06-16 | Cree, Inc. | Light emitter devices and components with improved chemical resistance and related methods |
JP2014525146A (en) | 2011-07-21 | 2014-09-25 | クリー インコーポレイテッド | Light emitting device, package, component, and method for improved chemical resistance and related methods |
US10211380B2 (en) | 2011-07-21 | 2019-02-19 | Cree, Inc. | Light emitting devices and components having improved chemical resistance and related methods |
US8558252B2 (en) | 2011-08-26 | 2013-10-15 | Cree, Inc. | White LEDs with emission wavelength correction |
CN103782403B (en) | 2011-09-06 | 2017-06-30 | 克利公司 | Optical transmitting set packaging part and device and correlation technique with improved wire bonding |
US9373617B2 (en) | 2011-09-11 | 2016-06-21 | Cree, Inc. | High current, low switching loss SiC power module |
US8680587B2 (en) | 2011-09-11 | 2014-03-25 | Cree, Inc. | Schottky diode |
US9640617B2 (en) | 2011-09-11 | 2017-05-02 | Cree, Inc. | High performance power module |
US8618582B2 (en) | 2011-09-11 | 2013-12-31 | Cree, Inc. | Edge termination structure employing recesses for edge termination elements |
US8664665B2 (en) | 2011-09-11 | 2014-03-04 | Cree, Inc. | Schottky diode employing recesses for elements of junction barrier array |
US8957440B2 (en) | 2011-10-04 | 2015-02-17 | Cree, Inc. | Light emitting devices with low packaging factor |
USD705181S1 (en) | 2011-10-26 | 2014-05-20 | Cree, Inc. | Light emitting device component |
CN104081112B (en) | 2011-11-07 | 2016-03-16 | 克利公司 | High voltage array light-emitting diode (LED) device, equipment and method |
US10043960B2 (en) | 2011-11-15 | 2018-08-07 | Cree, Inc. | Light emitting diode (LED) packages and related methods |
US8564004B2 (en) | 2011-11-29 | 2013-10-22 | Cree, Inc. | Complex primary optics with intermediate elements |
US8633094B2 (en) | 2011-12-01 | 2014-01-21 | Power Integrations, Inc. | GaN high voltage HFET with passivation plus gate dielectric multilayer structure |
US9496466B2 (en) | 2011-12-06 | 2016-11-15 | Cree, Inc. | Light emitter devices and methods, utilizing light emitting diodes (LEDs), for improved light extraction |
US8940620B2 (en) | 2011-12-15 | 2015-01-27 | Power Integrations, Inc. | Composite wafer for fabrication of semiconductor devices |
US8895998B2 (en) | 2012-03-30 | 2014-11-25 | Cree, Inc. | Ceramic-based light emitting diode (LED) devices, components and methods |
US9786825B2 (en) | 2012-02-07 | 2017-10-10 | Cree, Inc. | Ceramic-based light emitting diode (LED) devices, components, and methods |
US9806246B2 (en) | 2012-02-07 | 2017-10-31 | Cree, Inc. | Ceramic-based light emitting diode (LED) devices, components, and methods |
US9240530B2 (en) | 2012-02-13 | 2016-01-19 | Cree, Inc. | Light emitter devices having improved chemical and physical resistance and related methods |
US9343441B2 (en) | 2012-02-13 | 2016-05-17 | Cree, Inc. | Light emitter devices having improved light output and related methods |
US10020244B2 (en) | 2012-03-27 | 2018-07-10 | Cree, Inc. | Polymer via plugs with high thermal integrity |
US9735198B2 (en) | 2012-03-30 | 2017-08-15 | Cree, Inc. | Substrate based light emitter devices, components, and related methods |
US10134961B2 (en) | 2012-03-30 | 2018-11-20 | Cree, Inc. | Submount based surface mount device (SMD) light emitter components and methods |
US9538590B2 (en) | 2012-03-30 | 2017-01-03 | Cree, Inc. | Solid state lighting apparatuses, systems, and related methods |
US10222032B2 (en) | 2012-03-30 | 2019-03-05 | Cree, Inc. | Light emitter components and methods having improved electrical contacts |
CN104364904B (en) | 2012-04-06 | 2017-12-08 | 克利公司 | For launching the Light emitting diode component and method of desired beam pattern |
US9188290B2 (en) | 2012-04-10 | 2015-11-17 | Cree, Inc. | Indirect linear fixture |
US8878204B2 (en) | 2012-05-04 | 2014-11-04 | Cree, Inc. | Submount based light emitter components and methods |
US9349929B2 (en) | 2012-05-31 | 2016-05-24 | Cree, Inc. | Light emitter packages, systems, and methods |
USD749051S1 (en) | 2012-05-31 | 2016-02-09 | Cree, Inc. | Light emitting diode (LED) package |
US9590155B2 (en) | 2012-06-06 | 2017-03-07 | Cree, Inc. | Light emitting devices and substrates with improved plating |
US9685585B2 (en) | 2012-06-25 | 2017-06-20 | Cree, Inc. | Quantum dot narrow-band downconverters for high efficiency LEDs |
GB201217712D0 (en) * | 2012-10-03 | 2012-11-14 | Spts Technologies Ltd | methods of plasma etching |
US9441818B2 (en) | 2012-11-08 | 2016-09-13 | Cree, Inc. | Uplight with suspended fixture |
US9482396B2 (en) | 2012-11-08 | 2016-11-01 | Cree, Inc. | Integrated linear light engine |
US10788176B2 (en) | 2013-02-08 | 2020-09-29 | Ideal Industries Lighting Llc | Modular LED lighting system |
US9494304B2 (en) | 2012-11-08 | 2016-11-15 | Cree, Inc. | Recessed light fixture retrofit kit |
US9316382B2 (en) | 2013-01-31 | 2016-04-19 | Cree, Inc. | Connector devices, systems, and related methods for connecting light emitting diode (LED) modules |
US9345091B2 (en) | 2013-02-08 | 2016-05-17 | Cree, Inc. | Light emitting device (LED) light fixture control systems and related methods |
US8916896B2 (en) | 2013-02-22 | 2014-12-23 | Cree, Inc. | Light emitter components and methods having improved performance |
US10295124B2 (en) | 2013-02-27 | 2019-05-21 | Cree, Inc. | Light emitter packages and methods |
US8928037B2 (en) | 2013-02-28 | 2015-01-06 | Power Integrations, Inc. | Heterostructure power transistor with AlSiN passivation layer |
US9874333B2 (en) | 2013-03-14 | 2018-01-23 | Cree, Inc. | Surface ambient wrap light fixture |
US10584860B2 (en) | 2013-03-14 | 2020-03-10 | Ideal Industries, Llc | Linear light fixture with interchangeable light engine unit |
USD738026S1 (en) | 2013-03-14 | 2015-09-01 | Cree, Inc. | Linear wrap light fixture |
USD733952S1 (en) | 2013-03-15 | 2015-07-07 | Cree, Inc. | Indirect linear fixture |
US9215792B2 (en) | 2013-03-15 | 2015-12-15 | Cree, Inc. | Connector devices, systems, and related methods for light emitter components |
US9897267B2 (en) | 2013-03-15 | 2018-02-20 | Cree, Inc. | Light emitter components, systems, and related methods |
US9431590B2 (en) | 2013-03-15 | 2016-08-30 | Cree, Inc. | Ceramic based light emitting diode (LED) devices and methods |
USD738542S1 (en) | 2013-04-19 | 2015-09-08 | Cree, Inc. | Light emitting unit |
US9711489B2 (en) | 2013-05-29 | 2017-07-18 | Cree Huizhou Solid State Lighting Company Limited | Multiple pixel surface mount device package |
WO2014197512A1 (en) | 2013-06-04 | 2014-12-11 | Cree, Inc. | Light emitting diode dielectric mirror |
US9755059B2 (en) | 2013-06-09 | 2017-09-05 | Cree, Inc. | Cascode structures with GaN cap layers |
US9679981B2 (en) | 2013-06-09 | 2017-06-13 | Cree, Inc. | Cascode structures for GaN HEMTs |
US9847411B2 (en) | 2013-06-09 | 2017-12-19 | Cree, Inc. | Recessed field plate transistor structures |
US9275861B2 (en) | 2013-06-26 | 2016-03-01 | Globalfoundries Inc. | Methods of forming group III-V semiconductor materials on group IV substrates and the resulting substrate structures |
USD740453S1 (en) | 2013-06-27 | 2015-10-06 | Cree, Inc. | Light emitter unit |
USD739565S1 (en) | 2013-06-27 | 2015-09-22 | Cree, Inc. | Light emitter unit |
US9461024B2 (en) | 2013-08-01 | 2016-10-04 | Cree, Inc. | Light emitter devices and methods for light emitting diode (LED) chips |
USD758976S1 (en) | 2013-08-08 | 2016-06-14 | Cree, Inc. | LED package |
US10900653B2 (en) | 2013-11-01 | 2021-01-26 | Cree Hong Kong Limited | LED mini-linear light engine |
CN103645078B (en) * | 2013-12-05 | 2016-01-20 | 广东工业大学 | A kind of cross section quick Fabrication of single crystal semiconductor substrate and sub-crizzle detection method |
US10612747B2 (en) | 2013-12-16 | 2020-04-07 | Ideal Industries Lighting Llc | Linear shelf light fixture with gap filler elements |
USD750308S1 (en) | 2013-12-16 | 2016-02-23 | Cree, Inc. | Linear shelf light fixture |
US10100988B2 (en) | 2013-12-16 | 2018-10-16 | Cree, Inc. | Linear shelf light fixture with reflectors |
US10234119B2 (en) | 2014-03-24 | 2019-03-19 | Cree, Inc. | Multiple voltage light emitter packages, systems, and related methods |
USD757324S1 (en) | 2014-04-14 | 2016-05-24 | Cree, Inc. | Linear shelf light fixture with reflectors |
USD790486S1 (en) | 2014-09-30 | 2017-06-27 | Cree, Inc. | LED package with truncated encapsulant |
US9826581B2 (en) | 2014-12-05 | 2017-11-21 | Cree, Inc. | Voltage configurable solid state lighting apparatuses, systems, and related methods |
US10658546B2 (en) | 2015-01-21 | 2020-05-19 | Cree, Inc. | High efficiency LEDs and methods of manufacturing |
USD777122S1 (en) | 2015-02-27 | 2017-01-24 | Cree, Inc. | LED package |
USD783547S1 (en) | 2015-06-04 | 2017-04-11 | Cree, Inc. | LED package |
CN105140111A (en) * | 2015-08-11 | 2015-12-09 | 中国科学院半导体研究所 | Method for removing punch-through defects on silicon carbide epitaxial surface |
USD823492S1 (en) | 2016-10-04 | 2018-07-17 | Cree, Inc. | Light emitting device |
US10804251B2 (en) | 2016-11-22 | 2020-10-13 | Cree, Inc. | Light emitting diode (LED) devices, components and methods |
US10672957B2 (en) | 2017-07-19 | 2020-06-02 | Cree, Inc. | LED apparatuses and methods for high lumen output density |
CN110447110B (en) | 2017-08-25 | 2022-12-23 | 惠州科锐半导体照明有限公司 | Multiple LED light source lens design in integrated package |
US11056625B2 (en) | 2018-02-19 | 2021-07-06 | Creeled, Inc. | Clear coating for light emitting device exterior having chemical resistance and related methods |
CN109003895B (en) * | 2018-07-19 | 2021-06-08 | 大连理工大学 | Manufacturing method for improving performance stability of SiC MOSFET device |
US10971612B2 (en) | 2019-06-13 | 2021-04-06 | Cree, Inc. | High electron mobility transistors and power amplifiers including said transistors having improved performance and reliability |
US10923585B2 (en) | 2019-06-13 | 2021-02-16 | Cree, Inc. | High electron mobility transistors having improved contact spacing and/or improved contact vias |
US11749758B1 (en) | 2019-11-05 | 2023-09-05 | Semiq Incorporated | Silicon carbide junction barrier schottky diode with wave-shaped regions |
US11257940B2 (en) | 2020-01-14 | 2022-02-22 | Cree, Inc. | Group III HEMT and capacitor that share structural features |
US11469333B1 (en) | 2020-02-19 | 2022-10-11 | Semiq Incorporated | Counter-doped silicon carbide Schottky barrier diode |
US20210313293A1 (en) | 2020-04-03 | 2021-10-07 | Cree, Inc. | Rf amplifier devices and methods of manufacturing |
US11670605B2 (en) | 2020-04-03 | 2023-06-06 | Wolfspeed, Inc. | RF amplifier devices including interconnect structures and methods of manufacturing |
US11837457B2 (en) | 2020-09-11 | 2023-12-05 | Wolfspeed, Inc. | Packaging for RF transistor amplifiers |
US11356070B2 (en) | 2020-06-01 | 2022-06-07 | Wolfspeed, Inc. | RF amplifiers having shielded transmission line structures |
US11769768B2 (en) | 2020-06-01 | 2023-09-26 | Wolfspeed, Inc. | Methods for pillar connection on frontside and passive device integration on backside of die |
US11228287B2 (en) | 2020-06-17 | 2022-01-18 | Cree, Inc. | Multi-stage decoupling networks integrated with on-package impedance matching networks for RF power amplifiers |
US11533025B2 (en) | 2020-06-18 | 2022-12-20 | Wolfspeed, Inc. | Integrated doherty amplifier with added isolation between the carrier and the peaking transistors |
US11581859B2 (en) | 2020-06-26 | 2023-02-14 | Wolfspeed, Inc. | Radio frequency (RF) transistor amplifier packages with improved isolation and lead configurations |
US11887945B2 (en) | 2020-09-30 | 2024-01-30 | Wolfspeed, Inc. | Semiconductor device with isolation and/or protection structures |
US20220139852A1 (en) | 2020-10-30 | 2022-05-05 | Cree, Inc. | Transistor packages with improved die attach |
US20220376085A1 (en) | 2021-05-20 | 2022-11-24 | Cree, Inc. | Methods of manufacturing high electron mobility transistors having improved performance |
US11842937B2 (en) | 2021-07-30 | 2023-12-12 | Wolfspeed, Inc. | Encapsulation stack for improved humidity performance and related fabrication methods |
US20230075505A1 (en) | 2021-09-03 | 2023-03-09 | Wolfspeed, Inc. | Metal pillar connection topologies for heterogeneous packaging |
US20230078017A1 (en) | 2021-09-16 | 2023-03-16 | Wolfspeed, Inc. | Semiconductor device incorporating a substrate recess |
CN114773042A (en) * | 2022-03-23 | 2022-07-22 | 康姆罗拉有限公司 | Preparation process of quartz ceramic |
US20240105823A1 (en) | 2022-09-23 | 2024-03-28 | Wolfspeed, Inc. | Barrier Structure for Dispersion Reduction in Transistor Devices |
US20240105824A1 (en) | 2022-09-23 | 2024-03-28 | Wolfspeed, Inc. | Barrier Structure for Sub-100 Nanometer Gate Length Devices |
US20240120202A1 (en) | 2022-10-06 | 2024-04-11 | Wolfspeed, Inc. | Implanted Regions for Semiconductor Structures with Deep Buried Layers |
CN115799061B (en) * | 2023-01-09 | 2023-09-05 | 浙江大学杭州国际科创中心 | SiC wafer dicing sheet processing method and SiC wafer dicing sheet processing apparatus |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1989004055A1 (en) * | 1987-10-26 | 1989-05-05 | North Carolina State University | Sublimation growth of silicon carbide single crystals |
US4865685A (en) * | 1987-11-03 | 1989-09-12 | North Carolina State University | Dry etching of silicon carbide |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US28A (en) * | 1836-09-20 | Drawing | ||
US3078219A (en) * | 1958-11-03 | 1963-02-19 | Westinghouse Electric Corp | Surface treatment of silicon carbide |
DE1242972B (en) * | 1964-03-06 | 1967-06-22 | Ibm Deutschland | Process for etching SiC |
US3398033A (en) * | 1965-02-26 | 1968-08-20 | Dow Corning | Method of etching silicon carbide |
US3501356A (en) * | 1966-05-12 | 1970-03-17 | Westinghouse Electric Corp | Process for the epitaxial growth of silicon carbide |
US3504181A (en) * | 1966-10-06 | 1970-03-31 | Westinghouse Electric Corp | Silicon carbide solid state ultraviolet radiation detector |
US3563817A (en) * | 1966-10-06 | 1971-02-16 | Westinghouse Electric Corp | Method of producing silicon carbide ultraviolet radiation detectors |
US4032960A (en) * | 1975-01-30 | 1977-06-28 | General Electric Company | Anisotropic resistor for electrical feed throughs |
US4226665A (en) * | 1978-07-31 | 1980-10-07 | Bell Telephone Laboratories, Incorporated | Device fabrication by plasma etching |
US4393967A (en) * | 1979-11-05 | 1983-07-19 | International Business Machines Corporation | Electrostatic clutch |
JPS6066823A (en) * | 1983-09-22 | 1985-04-17 | Semiconductor Energy Lab Co Ltd | Etching method of semiconductor |
US4762806A (en) * | 1983-12-23 | 1988-08-09 | Sharp Kabushiki Kaisha | Process for producing a SiC semiconductor device |
JP2615390B2 (en) * | 1985-10-07 | 1997-05-28 | 工業技術院長 | Method of manufacturing silicon carbide field effect transistor |
DE3603725C2 (en) * | 1986-02-06 | 1994-08-18 | Siemens Ag | Process for structuring silicon carbide |
US4676868A (en) * | 1986-04-23 | 1987-06-30 | Fairchild Semiconductor Corporation | Method for planarizing semiconductor substrates |
-
1989
- 1989-10-13 US US07/421,375 patent/US4946547A/en not_active Expired - Lifetime
-
1990
- 1990-08-02 MY MYPI90001297A patent/MY107059A/en unknown
- 1990-08-06 CA CA002069309A patent/CA2069309C/en not_active Expired - Lifetime
- 1990-08-06 WO PCT/US1990/004398 patent/WO1991006116A1/en active IP Right Grant
- 1990-08-06 EP EP90912478A patent/EP0495787B1/en not_active Expired - Lifetime
- 1990-08-06 DE DE69013928T patent/DE69013928T2/en not_active Expired - Lifetime
- 1990-08-06 AU AU61806/90A patent/AU6180690A/en not_active Abandoned
- 1990-08-06 JP JP2511878A patent/JP2771697B2/en not_active Expired - Lifetime
- 1990-08-06 AT AT90912478T patent/ATE113758T1/en not_active IP Right Cessation
- 1990-08-06 KR KR1019920700858A patent/KR0163411B1/en not_active IP Right Cessation
- 1990-10-11 MX MX022815A patent/MX173786B/en unknown
- 1990-10-11 CN CN90108281.3A patent/CN1030674C/en not_active Expired - Lifetime
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1989004055A1 (en) * | 1987-10-26 | 1989-05-05 | North Carolina State University | Sublimation growth of silicon carbide single crystals |
US4865685A (en) * | 1987-11-03 | 1989-09-12 | North Carolina State University | Dry etching of silicon carbide |
Non-Patent Citations (3)
Title |
---|
Japanese Journal of Applied Physics, Volume 10, No. 12, December 1971, S. MIMAGWA et al.: "Epitaxial Growth of alpha-SiC from the Vapor Phase", pages 1680-1690 see page 1680, right-hand column, paragraph 2 - page 1681, right-hand column, paragraph 2 * |
Journal of Vacuum Science & Technology/A, Volume 4, No. 3, part 1, May-June 1986, American Vacuum Society, (Woodbury, NY, US) J.W. PALMOUR et al.: "Dry Etching of beta-SiC in CF4 and CF4+02 Mixtures", pages 590-593 see Abstract * |
Research Disclosure, No. 285, 1988, (New York, NY, US), "An Improved Method for Producing Cubic Silicon Carbide Semiconductors", page 32, Abstract No. 28533 see the whole Abstract * |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6270573B1 (en) | 1997-08-27 | 2001-08-07 | Matsushita Electric Industrial Co., Ltd. | Silicon carbide substrate, and method for producing the substrate, and semiconductor device utilizing the substrate |
WO2000039371A1 (en) * | 1998-12-25 | 2000-07-06 | Showa Denko K. K. | Method of manufacturing single-crystal silicon carbide |
US7678700B2 (en) | 2006-09-05 | 2010-03-16 | Cabot Microelectronics Corporation | Silicon carbide polishing method utilizing water-soluble oxidizers |
US7998866B2 (en) | 2006-09-05 | 2011-08-16 | Cabot Microelectronics Corporation | Silicon carbide polishing method utilizing water-soluble oxidizers |
Also Published As
Publication number | Publication date |
---|---|
DE69013928T2 (en) | 1995-03-30 |
KR0163411B1 (en) | 1999-02-01 |
US4946547A (en) | 1990-08-07 |
JP2771697B2 (en) | 1998-07-02 |
EP0495787B1 (en) | 1994-11-02 |
CA2069309C (en) | 2001-02-13 |
CN1050949A (en) | 1991-04-24 |
ATE113758T1 (en) | 1994-11-15 |
JPH05500883A (en) | 1993-02-18 |
CN1030674C (en) | 1996-01-10 |
DE69013928D1 (en) | 1994-12-08 |
EP0495787A1 (en) | 1992-07-29 |
MX173786B (en) | 1994-03-28 |
AU6180690A (en) | 1991-05-16 |
MY107059A (en) | 1995-09-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4946547A (en) | Method of preparing silicon carbide surfaces for crystal growth | |
CA1329167C (en) | Dry etching of silicon carbide | |
US4981551A (en) | Dry etching of silicon carbide | |
US5248385A (en) | Process for the homoepitaxial growth of single-crystal silicon carbide films on silicon carbide wafers | |
CA2097472C (en) | Method for the manufacture of large single crystals | |
EP2048267B1 (en) | Process for producing single-crystal substrate with off angle | |
CA2177345C (en) | Method for the growth of industrial crystals | |
US5363800A (en) | Process for the controlled growth of single-crystal films of silicon carbide polytypes on silicon carbide wafers | |
US4576829A (en) | Low temperature growth of silicon dioxide on silicon | |
EP1298234A2 (en) | Method of manufacturing a single crystal substrate | |
Jiang et al. | Diamond film orientation by ion bombardment during deposition | |
CN110079860B (en) | Splicing growth method of large-size single crystal diamond epitaxial wafer | |
JP2007119273A (en) | Method for growing silicon carbide single crystal | |
JP2006225232A (en) | Method for producing silicon carbide single crystal, silicon carbide single crystal ingot, silicon carbide single crystal substrate, silicon carbide epitaxial wafer and thin film epitaxial wafer | |
KR20070092098A (en) | Method of manufacturing substrates for the growth of single crystal diamond | |
CN104451868A (en) | Method for manufacturing a single crystal diamond | |
JPH06263595A (en) | Diamond-coated material and its production | |
JP2003321298A (en) | SiC SINGLE CRYSTAL AND METHOD FOR PRODUCING THE SAME, SiC WAFER WITH EPITAXIAL FILM AND METHOD FOR PRODUCING THE SAME, AND SiC ELECTRONIC DEVICE | |
JP4690906B2 (en) | Seed crystal for growing silicon carbide single crystal, method for producing the same, and method for producing silicon carbide single crystal | |
Jiang et al. | Approach of selective nucleation and epitaxy of diamond films on Si (100) | |
JPH06107494A (en) | Vapor growth method for diamond | |
JP4408247B2 (en) | Seed crystal for growing silicon carbide single crystal and method for producing silicon carbide single crystal using the same | |
EP3112504B1 (en) | Method for producing epitaxial silicon carbide wafer | |
JP5370025B2 (en) | Silicon carbide single crystal ingot | |
KR19990062035A (en) | Gallium Substrate Manufacturing Method Using Silicon Substrate |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A1 Designated state(s): AT AU BB BG BR CA CH DE DK ES FI GB HU JP KP KR LK LU MC MG MW NL NO RO SD SE SU |
|
AL | Designated countries for regional patents |
Kind code of ref document: A1 Designated state(s): AT BE BF BJ CF CG CH CM DE DK ES FR GA GB IT LU ML MR NL SE SN TD TG |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1990912478 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2069309 Country of ref document: CA |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1019920700858 Country of ref document: KR |
|
REG | Reference to national code |
Ref country code: DE Ref legal event code: 8642 |
|
WWP | Wipo information: published in national office |
Ref document number: 1990912478 Country of ref document: EP |
|
WWG | Wipo information: grant in national office |
Ref document number: 1990912478 Country of ref document: EP |