WO1990001803A1 - Light emitting diode array - Google Patents

Light emitting diode array Download PDF

Info

Publication number
WO1990001803A1
WO1990001803A1 PCT/GB1989/000926 GB8900926W WO9001803A1 WO 1990001803 A1 WO1990001803 A1 WO 1990001803A1 GB 8900926 W GB8900926 W GB 8900926W WO 9001803 A1 WO9001803 A1 WO 9001803A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
light emitting
array
light
emitting diodes
Prior art date
Application number
PCT/GB1989/000926
Other languages
French (fr)
Inventor
Peter Brian Hart
John Gooding
Original Assignee
Plessey Overseas Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Plessey Overseas Limited filed Critical Plessey Overseas Limited
Priority to JP50899789A priority Critical patent/JPH04501039A/en
Publication of WO1990001803A1 publication Critical patent/WO1990001803A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73257—Bump and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

Definitions

  • the present invention concerns improvements in or relating to the manufacture of light emitting diode (LED) arrays, more particularly arrays comprised of many close-spaced diode elements.
  • LED light emitting diode
  • LED arrays made by hybrid techniques are relatively coarse in geometry, it being difficult to achieve a closer pitch than 0.5mm.
  • For finer geometry arrays in LED'S it is necessary to fabricate monolithic structures but this presents difficulties in addressing, since without specialized isolation techniques all the LED's in a monolithic structure have a common cathode and require individual connections.
  • For fine geometries and for large numbers of pixels interconnection by conventional wirebonding is quite impracticable.
  • the present invention is intended to provide a remedy and thus enables the provision of an array of close-spaced elements complete with connections to LED driver circuitry .
  • the solution to the aforesaid problem is based upon: a) the fabrication of the LED array in a material with a transparent substrate so that the array can be viewed from the reverse side; and b ) making the interconnections to the array by 'flip- chipping' the array directly onto the silicon driving circuitry.
  • a light emitting diode array comprising an optically transparent substrate (1) of semiconductor material in which a multiplicity of light emitting diodes (10) are defined on one surface of the substrate, each of said diodes (10) having an electrical contact (4) on one surface of the substrate, said substrate (1) being provided with a common electrode of an optically transparent material for all the diodes (10).
  • a further substrate (6) in which a multiplicity of driver circuits are defined corresponding to the number and positions of the light emitting diodes 10 on the substrate (1 ), each driver circuit having a corresponding contact and wherein the contacts of the light emitting diodes and the corresponding contacts of the driver circuits are in alignment and in electrical soldered contact.
  • a method of manufacturing a light emitting diode arriv which comprises providing a semiconductor substrate ( 1 ) of o ⁇ iealiv transparent material having a multiplicity of light emitting diodes (10).
  • each diode having an electrical contact (4) on one surface of the substrate, providing a further substrate (6) in which a multiplicity of contacts are defined corresponding to the number and positions of the light emitting diodes (10) on the substrate (1 ).
  • LED performance In conventional fine geometry LED structures driver at high current densities, current crowding effects result in much of the light being generated underneath the contact area. With the flip-chip approach the diode is viewed from the reverse side, and all the emitting area is visible with a consequent increase in device efficiency. Improved diode performance also will result from better heat-sinking .
  • LED's would be fabricated in a 100x100 array by standard diffusion techniques in GaAsP on GaP. The light-emitting region is nitrogen doped, and the emission wavelength is determined by the As/P ratio. The LED's would be (say) 40 micron in diameter and on 80 micron pitch, giving a total chip size of 9mmx9mm.
  • Figure 1 shows a side view of a light emitting array embodying the invention
  • Figure 2 is a section through the LED array of figure 1 showing the direction of light output from the light emitting diodes of the array;
  • Figure 3 shows a single LED of the array shown in figure 1. the single LED being soldered to corresponding contact on an active silicon substrate containing driver circuits;
  • Figure 4 shows a part of a two dimensional LED array embodying the invention.
  • an array of light-emitting diodes 10 is provided on an optically transparent GaP substrate 1.
  • the substrate 1 is formed with a light emitting GaAsP region 2 which is nitrogen doped.
  • the emission wavelength of the region 2 is determined by As/P ratio.
  • the light emitting diodes are formed on the substrate 1 , forming thereon a layer 3 of Sis N 4 .
  • the layer 3 acts as an insulating diffusion barrier.
  • the layer 3 is selectively etched at a plurality of predetermined locations on the substrate to provide exposed areas on the substrate for the formation of light emitting diodes 10.
  • the number of etched location preferably correspond to the number of light emitting diodes to be provided on the array.
  • each etched location has a diameter such as to provide a light-emitting diode having a diameter 40 microns and the distance between the adjacent etched locations is such that an array of diodes 10 having 80 microns pitch is formed as shown in figure 4.
  • the light-emitting diodes 10 are formed at the exposed areas of the substrate by diffusion each having a P-n junction.
  • a metal contact 4 is thereafter evaporated on each LED in the array.
  • the metal contact may be made of material such as aluminium silicon alloy.
  • a common electrode of an optical transparent material which may be an N-type contact, is provided on the reverse side of the substrate. This common contact 5 is shown only for illustration purposes in figure 1.
  • An integrated circuit chip 6 having a plurality of driver circuits is provided for interconnection of each driver circuit to corresponding light-emitting diode 10.
  • the chip 6 includes an active silicon substrate.
  • the number of driver circuits on the active silicon substrate correspond to the number of light emitting diodes 10 and the pitch of the driver circuits on the silicon substrate correspond to the pitch of the light-emitting diodes on the substrate 1 , so that each driver circuits can be individually connected to the corresponding light-emitting diode 10 in the array.
  • the driver circuits are connected to the light-emitting diodes by flip-chip solder bonding technique.
  • Wet-metallisation layers 7 are provided on each light-emitting diode and on each driver circuit and a gauged amount of solder is deposited between the metallisation layers 7 and on refiowing the solder, a bump 8 is formed which connects a light-emitting diode 10 to corresponding driver circuit on the chip 6.
  • the advantage of the flip-chipping technique is that the diodes are viewed from the reverse side of the substrate 1, and all the emitting area is visible with a consequent in device efficiency.

Abstract

A close-spaced diode array in which connection to driver circuitry is enabled by application of a flip-chip solder bonding technique. Not only does this allow dense packing, high pixel content to be achieved but has concomitant advantages of increased light efficiency and improved heat sinking.

Description

LIGHT EMITTING DIODE ARRAY
The present invention concerns improvements in or relating to the manufacture of light emitting diode (LED) arrays, more particularly arrays comprised of many close-spaced diode elements.
There are many modern-day applications that require displays having a large number of display elements (pixels) on a fine geometry for use in optical systems. To provide good imagery requires as many as 500x500 pixels but it is possible to produce recognizable pictures with a much lower pixel count. The conventional cathode ray tube (CRT) can give extremely good definition but is bulky and requires high power and high voltages. Alternative display technologies can be more compact but also have their own particular problems. Passive liquid crystal device (LCD ) displays use little power, but can be difficult to address and multiplex and also require back-lighting for use in the dark.
LED arrays made by hybrid techniques are relatively coarse in geometry, it being difficult to achieve a closer pitch than 0.5mm. For finer geometry arrays in LED'S it is necessary to fabricate monolithic structures but this presents difficulties in addressing, since without specialized isolation techniques all the LED's in a monolithic structure have a common cathode and require individual connections. For fine geometries and for large numbers of pixels interconnection by conventional wirebonding is quite impracticable. The present invention is intended to provide a remedy and thus enables the provision of an array of close-spaced elements complete with connections to LED driver circuitry . The solution to the aforesaid problem is based upon: a) the fabrication of the LED array in a material with a transparent substrate so that the array can be viewed from the reverse side; and b ) making the interconnections to the array by 'flip- chipping' the array directly onto the silicon driving circuitry.
In accordance with a first aspect of this invention there is provided a light emitting diode array comprising an optically transparent substrate (1) of semiconductor material in which a multiplicity of light emitting diodes (10) are defined on one surface of the substrate, each of said diodes (10) having an electrical contact (4) on one surface of the substrate, said substrate (1) being provided with a common electrode of an optically transparent material for all the diodes (10). a further substrate (6) in which a multiplicity of driver circuits are defined corresponding to the number and positions of the light emitting diodes 10 on the substrate (1 ), each driver circuit having a corresponding contact and wherein the contacts of the light emitting diodes and the corresponding contacts of the driver circuits are in alignment and in electrical soldered contact.
In the foregoing array, light is transmitted in all directions from each addressed diode. That light which is transmitted in a reverse direction, that is, into the body of the optically transparent substrate. is used to provide the visual display. In accordance with a second aspect of this invention there is provided a method of manufacturing a light emitting diode arriv. which comprises providing a semiconductor substrate ( 1 ) of oπiealiv transparent material having a multiplicity of light emitting diodes (10). and a common electrode of an optically transparent material for all of said diodes, each diode having an electrical contact (4) on one surface of the substrate, providing a further substrate (6) in which a multiplicity of contacts are defined corresponding to the number and positions of the light emitting diodes (10) on the substrate (1 ). depositing a gauged amounted of solder upon each contact of at least one of the aforesaid substrates, winging the substrates into surface contact which the electrical contact of each facing and in alignment. and refiowing the solder to form solder bump (8) connecting the light emitting diodes to the corresponding driver circuits.
The foregoing solution has additional advantages in LED performance. In conventional fine geometry LED structures driver at high current densities, current crowding effects result in much of the light being generated underneath the contact area. With the flip-chip approach the diode is viewed from the reverse side, and all the emitting area is visible with a consequent increase in device efficiency. Improved diode performance also will result from better heat-sinking . In an example of the proposed structure, LED's would be fabricated in a 100x100 array by standard diffusion techniques in GaAsP on GaP. The light-emitting region is nitrogen doped, and the emission wavelength is determined by the As/P ratio. The LED's would be (say) 40 micron in diameter and on 80 micron pitch, giving a total chip size of 9mmx9mm. Contact to the diode would be by individual dots completely covering the diffused region. Use of solder-bump technology would then allow contact to a corresponding geometry silicon driver chip. The silicon driver chip can then control the intensity of each LED in accordance with received data. It can also be used to apply corrections for n on -uniformity in the LED array. The invention will now be further described by way of example with reference to the accompanying drawings:
Figure 1 shows a side view of a light emitting array embodying the invention;
Figure 2 is a section through the LED array of figure 1 showing the direction of light output from the light emitting diodes of the array;
Figure 3 shows a single LED of the array shown in figure 1. the single LED being soldered to corresponding contact on an active silicon substrate containing driver circuits;
Figure 4 shows a part of a two dimensional LED array embodying the invention.
As shown in figures 1 to 3, an array of light-emitting diodes 10 is provided on an optically transparent GaP substrate 1. The substrate 1 is formed with a light emitting GaAsP region 2 which is nitrogen doped. The emission wavelength of the region 2 is determined by As/P ratio.
The light emitting diodes are formed on the substrate 1 ,
Figure imgf000006_0001
forming thereon a layer 3 of Sis N4. The layer 3 acts as an insulating diffusion barrier. The layer 3 is selectively etched at a plurality of predetermined locations on the substrate to provide exposed areas on the substrate for the formation of light emitting diodes 10. The number of etched location preferably correspond to the number of light emitting diodes to be provided on the array. Preferably each etched location has a diameter such as to provide a light-emitting diode having a diameter 40 microns and the distance between the adjacent etched locations is such that an array of diodes 10 having 80 microns pitch is formed as shown in figure 4. The light-emitting diodes 10 are formed at the exposed areas of the substrate by diffusion each having a P-n junction. A metal contact 4 is thereafter evaporated on each LED in the array. The metal contact may be made of material such as aluminium silicon alloy. For all the light- emitting diodes in the array, a common electrode of an optical transparent material, which may be an N-type contact, is provided on the reverse side of the substrate. This common contact 5 is shown only for illustration purposes in figure 1.
An integrated circuit chip 6 having a plurality of driver circuits is provided for interconnection of each driver circuit to corresponding light-emitting diode 10. The chip 6 includes an active silicon substrate. The number of driver circuits on the active silicon substrate correspond to the number of light emitting diodes 10 and the pitch of the driver circuits on the silicon substrate correspond to the pitch of the light-emitting diodes on the substrate 1 , so that each driver circuits can be individually connected to the corresponding light-emitting diode 10 in the array.
The driver circuits are connected to the light-emitting diodes by flip-chip solder bonding technique. Wet-metallisation layers 7 are provided on each light-emitting diode and on each driver circuit and a gauged amount of solder is deposited between the metallisation layers 7 and on refiowing the solder, a bump 8 is formed which connects a light-emitting diode 10 to corresponding driver circuit on the chip 6. The advantage of the flip-chipping technique is that the diodes are viewed from the reverse side of the substrate 1, and all the emitting area is visible with a consequent in device efficiency.

Claims

CLAIM S
1 . A light emitting diode array comprising an optically transparent substrate (1 ) of semiconductor material in which a multiplicity of light emitting diodes (10) are defined on one surface of the substrate, each of said diodes (10) having an electrical contact (4) on said one surface of the substrate, said substrate (1 ) being provided with a common electrode of an optically transparent material for all the diodes (10), a further substrate (6) in which a multiplicity of driver circuits are defined corresponding to the number and positions of the light emitting diodes 10 on the substrate (1 ), each driver circuit having a corresponding contact and wherein the contacts of the light emitting diodes and the corresponding contacts of the driver circuits are in alignment and in electrical soldered contact.
2. An array as claimed in claim 1 , in which said substrate ( 1 ; is GaP substrate (1 ).
3. An array as claimed in claimed 2, in which a light-emitting Ga As P region (2) is formed in said substrate (1).
4. An array as claimed in any one of claims 1 to 3, in which the. diameter of each light-emitting diode (10) is 40 microns and the pitch of the light-emitting diodes in said array is 80 microns.
5. An array as claimed in any one of the preceding claims in which said solder contact includes a solder bump (8 ) formed b\ refiowing gauged amount of solder deposited between a light- emitting diode (10) and its corresponding driver circuit.
6. A method of manufacturing a light emitting diode array, which comprises providing a semiconductor substrate (1) of opticalh transparent material having a multiplicity of light emitting diodes (10) and a common electrode of an optically transparent material for all of said diodes, each diode having an electrical contact (4 ) on one surface of the substrate, providing a further substrate (6) in which a multiplicity of driver circuits are defined corresponding to the number and positions of the light emitting diodes (10) on the substrate (1 ), each driver circuit having an electrical contact on one surface of the further substrate, depositing a gauged amounted of solder upon each contact of at least one of the aforesaid substrates. bringing the substrates into surface contact with the electrical contact of each facing and substantially in alignment, and refiowing the solder to form solder bumps (8) connecting the light emitting diodes to the corresponding driver circuits.
7. A method as claimed in claim 6. in which said substrate . I ) is
Ga P substrate having a light emitting Ga As P region (2).
8. A method as claimed in claim 6 and 7, in which the diameter of each light-emitting diode (10) is 40 microns and the pitch of the light-emitting diodes in said array is 80 microns.
9. A method as claimed in any one of claims 6 to 8, in which said light emitting diodes are formed in said substrate by forming an insulating diffusion barrier (3) on a surface of said substrate (1... selectively etching a said barrier at a plurality of locations to provide exposed areas and forming light emitting diode by diffusion in said selectively etched locations.
10. A display unit including an array as claimed in any one of claims 1 to 5 or an array made by the method as claimed in anyone of claims 6 to 9.
PCT/GB1989/000926 1988-08-11 1989-08-11 Light emitting diode array WO1990001803A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50899789A JPH04501039A (en) 1989-08-11 1989-08-11 light emitting diode array

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB8819070.7 1988-08-11
GB8819070A GB2249428A (en) 1988-08-11 1988-08-11 Connections for led arrays

Publications (1)

Publication Number Publication Date
WO1990001803A1 true WO1990001803A1 (en) 1990-02-22

Family

ID=10641949

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/GB1989/000926 WO1990001803A1 (en) 1988-08-11 1989-08-11 Light emitting diode array

Country Status (4)

Country Link
US (1) US5060027A (en)
EP (1) EP0383889A1 (en)
GB (1) GB2249428A (en)
WO (1) WO1990001803A1 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0572779A1 (en) * 1992-06-04 1993-12-08 Motorola, Inc. Integrated display source with emissive polymers
US6333522B1 (en) 1997-01-31 2001-12-25 Matsushita Electric Industrial Co., Ltd. Light-emitting element, semiconductor light-emitting device, and manufacturing methods therefor
EP2343737A1 (en) * 2000-07-18 2011-07-13 Sony Corporation Image display unit and production method for image display unit
US9781800B2 (en) 2015-05-21 2017-10-03 Infineon Technologies Ag Driving several light sources
US9918367B1 (en) 2016-11-18 2018-03-13 Infineon Technologies Ag Current source regulation
US9974130B2 (en) 2015-05-21 2018-05-15 Infineon Technologies Ag Driving several light sources

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5457356A (en) * 1993-08-11 1995-10-10 Spire Corporation Flat panel displays and process
US5612549A (en) * 1994-03-24 1997-03-18 Motorola Integrated electro-optical package
US5539153A (en) * 1994-08-08 1996-07-23 Hewlett-Packard Company Method of bumping substrates by contained paste deposition
US6014586A (en) * 1995-11-20 2000-01-11 Pacesetter, Inc. Vertically integrated semiconductor package for an implantable medical device
US6441943B1 (en) 1997-04-02 2002-08-27 Gentex Corporation Indicators and illuminators using a semiconductor radiation emitter package
US6784463B2 (en) * 1997-06-03 2004-08-31 Lumileds Lighting U.S., Llc III-Phospide and III-Arsenide flip chip light-emitting devices
US6335548B1 (en) 1999-03-15 2002-01-01 Gentex Corporation Semiconductor radiation emitter package
US6521916B2 (en) 1999-03-15 2003-02-18 Gentex Corporation Radiation emitter device having an encapsulant with different zones of thermal conductivity
US6642613B1 (en) * 2000-05-09 2003-11-04 National Semiconductor Corporation Techniques for joining an opto-electronic module to a semiconductor package
US7075112B2 (en) * 2001-01-31 2006-07-11 Gentex Corporation High power radiation emitter device and heat dissipating package for electronic components
US6639360B2 (en) 2001-01-31 2003-10-28 Gentex Corporation High power radiation emitter device and heat dissipating package for electronic components
GB0107236D0 (en) 2001-03-22 2001-05-16 Microemissive Displays Ltd Method of creating an electroluminescent device
US6547249B2 (en) 2001-03-29 2003-04-15 Lumileds Lighting U.S., Llc Monolithic series/parallel led arrays formed on highly resistive substrates
US6747298B2 (en) * 2001-07-23 2004-06-08 Cree, Inc. Collets for bonding of light emitting diodes having shaped substrates
US6888167B2 (en) * 2001-07-23 2005-05-03 Cree, Inc. Flip-chip bonding of light emitting devices and light emitting devices suitable for flip-chip bonding
US7211884B1 (en) 2002-01-28 2007-05-01 Pacesetter, Inc. Implantable medical device construction using a flexible substrate
JP2004247373A (en) * 2003-02-12 2004-09-02 Semiconductor Energy Lab Co Ltd Semiconductor device
US20040206970A1 (en) * 2003-04-16 2004-10-21 Martin Paul S. Alternating current light emitting device
US7128438B2 (en) * 2004-02-05 2006-10-31 Agilight, Inc. Light display structures
US7488099B2 (en) * 2004-04-16 2009-02-10 Gentex Corporation Rearview mirror light
US8070329B1 (en) 2005-02-11 2011-12-06 Gentex Corporation Light emitting optical systems and assemblies and systems incorporating the same
US20070018189A1 (en) * 2005-07-22 2007-01-25 Unity Opto Technology Co., Ltd. Light emitting diode
US8456393B2 (en) * 2007-05-31 2013-06-04 Nthdegree Technologies Worldwide Inc Method of manufacturing a light emitting, photovoltaic or other electronic apparatus and system
JP5399982B2 (en) * 2010-06-17 2014-01-29 浜松ホトニクス株式会社 Inspection method of semiconductor integrated circuit device and semiconductor integrated circuit device
JP5349410B2 (en) * 2010-06-17 2013-11-20 浜松ホトニクス株式会社 Inspection method of semiconductor integrated circuit device and semiconductor integrated circuit device
US9041409B1 (en) * 2012-01-11 2015-05-26 Xilinx, Inc. Localization of failure in high density test structure
US10229630B2 (en) * 2014-05-14 2019-03-12 The Hong Kong University Of Science And Technology Passive-matrix light-emitting diodes on silicon micro-display
CN113437206B (en) 2014-06-18 2024-03-08 艾克斯展示公司技术有限公司 Micro-assembled LED display
US9799719B2 (en) 2014-09-25 2017-10-24 X-Celeprint Limited Active-matrix touchscreen
US9991163B2 (en) * 2014-09-25 2018-06-05 X-Celeprint Limited Small-aperture-ratio display with electrical component
US9871345B2 (en) 2015-06-09 2018-01-16 X-Celeprint Limited Crystalline color-conversion device
US10133426B2 (en) 2015-06-18 2018-11-20 X-Celeprint Limited Display with micro-LED front light
US11061276B2 (en) 2015-06-18 2021-07-13 X Display Company Technology Limited Laser array display
US10380930B2 (en) 2015-08-24 2019-08-13 X-Celeprint Limited Heterogeneous light emitter display system
US10230048B2 (en) 2015-09-29 2019-03-12 X-Celeprint Limited OLEDs for micro transfer printing
US10066819B2 (en) 2015-12-09 2018-09-04 X-Celeprint Limited Micro-light-emitting diode backlight system
US10193025B2 (en) 2016-02-29 2019-01-29 X-Celeprint Limited Inorganic LED pixel structure
US10153256B2 (en) 2016-03-03 2018-12-11 X-Celeprint Limited Micro-transfer printable electronic component
US10153257B2 (en) 2016-03-03 2018-12-11 X-Celeprint Limited Micro-printed display
US10199546B2 (en) 2016-04-05 2019-02-05 X-Celeprint Limited Color-filter device
US10008483B2 (en) 2016-04-05 2018-06-26 X-Celeprint Limited Micro-transfer printed LED and color filter structure
US9997501B2 (en) 2016-06-01 2018-06-12 X-Celeprint Limited Micro-transfer-printed light-emitting diode device
US11137641B2 (en) 2016-06-10 2021-10-05 X Display Company Technology Limited LED structure with polarized light emission
US9980341B2 (en) 2016-09-22 2018-05-22 X-Celeprint Limited Multi-LED components
US10782002B2 (en) 2016-10-28 2020-09-22 X Display Company Technology Limited LED optical components
US10347168B2 (en) 2016-11-10 2019-07-09 X-Celeprint Limited Spatially dithered high-resolution

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4039890A (en) * 1974-08-16 1977-08-02 Monsanto Company Integrated semiconductor light-emitting display array

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1487945A (en) * 1974-11-20 1977-10-05 Ibm Semiconductor integrated circuit devices
JPS5429239B2 (en) * 1974-12-04 1979-09-21
US4122479A (en) * 1975-01-31 1978-10-24 Hitachi, Ltd. Optoelectronic device having control circuit for light emitting element and circuit for light receiving element integrated in a semiconductor body
JPS61198690A (en) * 1985-02-27 1986-09-03 Oshino Denki Seisakusho:Kk Light emitting diode display element
FR2637150B1 (en) * 1988-09-23 1995-07-28 Neiman Sa LIGHT EMITTING DIODE ARRAY

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4039890A (en) * 1974-08-16 1977-08-02 Monsanto Company Integrated semiconductor light-emitting display array

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
IBM Technical Disclosure Bulletin, Vol. 26, No. 2, July 1983 (New York, US), P.E. CADE et al.: "Input/Output Device Interconnections", pages 572-574 *
Journal of Applied Physics, Vol. 48, No. 1, January 1977, American Institute of Physics (New York, US), M. KITADA: "Upside-Down Fabricated GaP Monolithic Display", pages 279-281 *
Proceedings of the Society for Information Display, Vol. 18, No. 2, Second Quarter 1977 (Los Angeles, US), M. INOUE et al.: "A GaP Monolithic Numeric Display with Internal Reflection Facets", pages 195-198 *

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0572779A1 (en) * 1992-06-04 1993-12-08 Motorola, Inc. Integrated display source with emissive polymers
US6333522B1 (en) 1997-01-31 2001-12-25 Matsushita Electric Industrial Co., Ltd. Light-emitting element, semiconductor light-emitting device, and manufacturing methods therefor
US6597019B2 (en) 1997-01-31 2003-07-22 Matsushita Electric Industrial Co., Ltd Semiconductor light-emitting device comprising an electrostatic protection element
US6642072B2 (en) 1997-01-31 2003-11-04 Matsushita Electric Industrial Co., Ltd. Light-emitting element, semiconductor light-emitting device, and manufacturing methods therefor
EP2343737A1 (en) * 2000-07-18 2011-07-13 Sony Corporation Image display unit and production method for image display unit
US8409886B2 (en) 2000-07-18 2013-04-02 Sony Corporation Method of producing image display unit
US9781800B2 (en) 2015-05-21 2017-10-03 Infineon Technologies Ag Driving several light sources
US9974130B2 (en) 2015-05-21 2018-05-15 Infineon Technologies Ag Driving several light sources
US10321533B2 (en) 2015-05-21 2019-06-11 Infineon Technologies Ag Driving several light sources
US9918367B1 (en) 2016-11-18 2018-03-13 Infineon Technologies Ag Current source regulation

Also Published As

Publication number Publication date
US5060027A (en) 1991-10-22
EP0383889A1 (en) 1990-08-29
GB2249428A (en) 1992-05-06
GB8819070D0 (en) 1988-09-14

Similar Documents

Publication Publication Date Title
US5060027A (en) Light emitting diode array with aligned solder bumps
US5780321A (en) LED display packaging with substrate removal and method of fabrication
US5940683A (en) LED display packaging with substrate removal and method of fabrication
JP4030614B2 (en) Full color light emitting diode display
KR100619618B1 (en) Light-receiving or light-emitting device and its production method
JP4210802B2 (en) Integrated photoelectric package and manufacturing method thereof
AU2002255303B2 (en) Light-Receiving panel or light-emitting panel, and manufacturing method thereof
EP0319907B1 (en) Light emitting diode array chip and method of fabricating the same
KR20190006176A (en) High-density pixel type multi-LED, device including the same, and manufacturing method thereof
US3964157A (en) Method of mounting semiconductor chips
JP2000294831A (en) Semiconductor light emitting device, array thereof, photosensor, and photosensor array
CN212934647U (en) Light emitting element for display and display device having the same
US20210265317A1 (en) Optoelectronic semiconductor device and method for manufacturing optoelectronic semiconductor devices
US20180145225A1 (en) Optoelectronic semiconductor chip and optoelectronic module
CN114864602A (en) Display panel
EP4033547A1 (en) Light-emitting diode package assembly
EP4033529A1 (en) Light emitting diode packaging assembly
CN114975721A (en) Display panel, manufacturing method thereof and display device
CN100405622C (en) Light-emitting element
US20230021522A1 (en) Component and method for producing a component
TWI824614B (en) Display panel
JPS63274563A (en) Monolithic light emitting element array for optical printer head
CN220774375U (en) LED display chip module, LED display chip and AR microLED display chip
JPH04501039A (en) light emitting diode array
WO2023032300A1 (en) Light emitting device and image display device

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): JP US

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): AT BE CH DE FR GB IT LU NL SE

WWE Wipo information: entry into national phase

Ref document number: 1989909598

Country of ref document: EP

WWP Wipo information: published in national office

Ref document number: 1989909598

Country of ref document: EP

WWW Wipo information: withdrawn in national office

Ref document number: 1989909598

Country of ref document: EP