WO1987004861A1 - Light detector - Google Patents

Light detector Download PDF

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Publication number
WO1987004861A1
WO1987004861A1 PCT/GB1987/000060 GB8700060W WO8704861A1 WO 1987004861 A1 WO1987004861 A1 WO 1987004861A1 GB 8700060 W GB8700060 W GB 8700060W WO 8704861 A1 WO8704861 A1 WO 8704861A1
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WO
WIPO (PCT)
Prior art keywords
detector
light
incident
incidence
angle
Prior art date
Application number
PCT/GB1987/000060
Other languages
French (fr)
Inventor
Craig Sawyers
Original Assignee
Pa Consulting Services Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pa Consulting Services Limited filed Critical Pa Consulting Services Limited
Publication of WO1987004861A1 publication Critical patent/WO1987004861A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the Schottky type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02325—Optical elements or arrangements associated with the device the optical elements not being integrated nor being directly associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers

Definitions

  • This invention concerns light detectors and is particularly concerned with the design of a wideband detector capable of responding to light over a range of wavelengths.
  • a preferred form of photodetector is a Schottky barrier device. It is known to profile the surface of such devices with the result that the device exhibits a peak response as a function of the angle of incidence and wavelength of the incident light.
  • the advantage of a Schottky barrier detector having a profiled surface is the high speed of response, combi ned with the ease of fabrication.
  • the response bandwidth for a given angle of incidence is very narrow typically 5-50 nm, and it is an object of the present invention to provide a design of such a device which posseses a greater response bandwidth.
  • a photodetector comprises :
  • a blazed diffraction grating which will efficiently diffract the first diffracted order of light incident thereon, and whose dispersion is chosen to compensate for the variation in angle of incidence with wavelength of the response peak of the detector
  • the resulting combination of blazed diffraction grating and Schottky barrier detector will have a high response to any input light where wavelengh is within the range of compensation provided by the dispersion of the grating. By careful choice of the dispersion, so the bandwidth of the combination can be controlled.
  • Figure 1 shows a typical profiled Schottky barrier detector construction, with light incident thereon
  • Figure 2 is a graphical representation of the response of such a device to change of wavelength and angle of incidence
  • Figure 3 shows diagrammatically an arrangement of grating and detector in accordance with the invention.
  • Figure 2 shows the detector response against changing wavelength for two different angles of incidence A1 and A2.
  • the curve 16 shows the response for the angle of incidence A1 and curve 18 that of an angle of incidence A2.
  • Figure 3 shows an arrangement of blazed grating 20 and detector 22 (which typically comprises a silicon substrate having a profiled upper surface which is coated by a thin metal layer, as shown in Figure 1.
  • the dispersion characteristic of the blazed grating is such that first order diffracted light is efficiently diffracted towards the detector at varying angles so that the angle of incidence, according to wavelength, is such as is necessary to produce a peak response in the detector, for each wavelength concerned, so a range of wavelengths of light incident on the grating 20 wil l produce peak responses in the detector 22.
  • two components 24, 26 of light of wavelength L1 and L2 are shown arriving in parallel at the grating 20 and thereafter are seen to diverge at 28 and 30 respectively to be incident on the detector 22 at different angles of incidence A1 and A2 respectively. Where there are the correct angles of incidence for those wavelengths, a peak response is obtained from the detector for both.
  • the blazed grating will treat all wavelengths intermediate L1 and L2 in a similar manner, and cause differing divergencies and therefore differing angles of incidence in the detector, so a peak level of response can be obtained for all the wavelengths concerned.
  • a photodetector which comprises a surface-profiled Schottky barrier detector (22) having a peak response which is function of wavelength and of angle of incidence, and a blazed diffraction grating (20) positioned in front of the barri detector and having its dispersion selected so that its first order of diffracted light is incident on the barrier detector wit an angle of incidence (Al, A2) which so varies as substantially to compensate for the peak response function of the barri detector, thereby to produce a peak response from the barrier detector throughout a range of wavelengths. In this way, t bandwidth of the photodector can be controlled.
  • This invention concerns light detectors and is particularly concerned with the design of a wideband detector capable of responding to light over a range of wavelengths.
  • a preferred form of photodetector is a Schottky barrier device. It is known to profile the surface of such devices with the result that the device exhibits a peak response as a function of the angle of incidence and wavelength of the incident light.
  • the advantage of a Schottky barrier detector having a profiled surface is the high speed of response, combined with the ease of fabrication.
  • the response bandwidth for a given angle of incidence is very narrow - typically 5-50 nm, and it is an object of the present invention to provide a design of such a device which posseses a greater response bandwidth.
  • a photodetector comprises:
  • a blazed diffraction grating which will efficiently diffract the first diffracted order of light incident thereon, and whose dispersion is chosen to compensate for the variation in angle of incidence with wavelength of the response peak of the detector
  • the resulting combination of blazed diffraction grating and Schottky barrier detector will have a high response to any input light where wavelengh is within the range of compensation provided by the dispersion of the grating. By careful choice of the dispersion, so the bandwidth of the combination can be controlled.
  • Figure 1 shows a typical profiled Schottky barrier detector construction, with light incident thereon
  • Figure 2 is a graphical representation of the response of such a device to change of wavelength and angle of incidence
  • Figure 3 shows diagrammatically an arrangement of grating and detector in accordance with the invention.
  • Figure 2 shows the detector response against changing wavelength for two different angles of incidence A1 and A2.
  • the curve 16 shows the response for the angle of incidence A1 and curve 18 that of an angle of incidence A2.
  • Figure 3 shows an arrangement of blazed grating 20 and detector 22 (which typically comprises a silicon substrate having a profiled upper surface which is coated by a thin metal layer, as shown in Figure 1.
  • detector 22 which typically comprises a silicon substrate having a profiled upper surface which is coated by a thin metal layer, as shown in Figure 1.
  • two components 24, 26 of light of wavelength L1 and L2 are shown arriving in parallel at the grating 20 and thereafter are seen to diverge at 28 and 30 respectively to be incident on the detector 22 at different angles of incidence A1 and A2 respectively. Where there are the correct angles of incidence for those wavelengths, a peak response. is obtained from the detector for both.
  • the blazed grating will treat all wavelengths intermediate L1 and L2 in a similar manner, and cause differing divergencies and therefore differing angles of incidence in the detector, so a peak level of response can be obtained for all the wavelengths concerned.

Abstract

A photodetector which comprises a surface-profiled Schottky barrier detector (22) having a peak response which is a function of wavelength and of angle of incidence, and a blazed diffraction grating (20) positioned in front of the barrier detector and having its dispersion selected so that its first order of diffracted light is incident on the barrier detector with an angle of incidence (A1, A2) which so varies as substantially to compensate for the peak response function of the barrier detector, thereby to produce a peak response from the barrier detector throughout a range of wavelengths. In this way, the bandwidth of the photodector can be controlled.

Description

Title; Light Detector
Field of invention
This invention concerns light detectors and is particularly concerned with the design of a wideband detector capable of responding to light over a range of wavelengths.
Background to the invention
A preferred form of photodetector is a Schottky barrier device. It is known to profile the surface of such devices with the result that the device exhibits a peak response as a function of the angle of incidence and wavelength of the incident light.
The advantage of a Schottky barrier detector having a profiled surface is the high speed of response, combi ned with the ease of fabrication. However, the response bandwidth for a given angle of incidence is very narrow typically 5-50 nm, and it is an object of the present invention to provide a design of such a device which posseses a greater response bandwidth.
Summary of the invention
According to the present invention a photodetector comprises :
1. a Schottky barrier detector having a profiled surface which exhibits a high response to incident light whose wavelength and angle of incidence satisfy an equation of the form f (wavelength, angle of incidence) = K,
2. a blazed diffraction grating which will efficiently diffract the first diffracted order of light incident thereon, and whose dispersion is chosen to compensate for the variation in angle of incidence with wavelength of the response peak of the detector,
3. means for projecting or otherwise causing input light to be incident on the diffraction grating,
4. means positioning the grating relative to the profiled detector surface so that any first order light from the grating (caused by input light incident thereon), will be diffracted so as to be incident on the profiled surface of the detector.
The resulting combination of blazed diffraction grating and Schottky barrier detector will have a high response to any input light where wavelengh is within the range of compensation provided by the dispersion of the grating. By careful choice of the dispersion, so the bandwidth of the combination can be controlled.
The invention will be described by way of example, with reference to the accompanying drawings, in which :
Figure 1 shows a typical profiled Schottky barrier detector construction, with light incident thereon,
Figure 2 is a graphical representation of the response of such a device to change of wavelength and angle of incidence, and
Figure 3 shows diagrammatically an arrangement of grating and detector in accordance with the invention.
In Figure 1 two beams of light one of wavelength L1 and the other L2 are incident on a profiled surface 10 of a metalised silicon substrate 12, the metal layer being denoted by 14.
If the response is mapped against angle of incidence (with constant wavelength) , it is found that, a peak in the detector output occurs at one particular angle, likewise if respons is mapped against changing wavelength, a peak is obtained at one particular wavelength if the angle of incidence remains constant.
Figure 2 shows the detector response against changing wavelength for two different angles of incidence A1 and A2. The curve 16 shows the response for the angle of incidence A1 and curve 18 that of an angle of incidence A2.
Figure 3 shows an arrangement of blazed grating 20 and detector 22 (which typically comprises a silicon substrate having a profiled upper surface which is coated by a thin metal layer, as shown in Figure 1. By arranging that the dispersion characteristic of the blazed grating is such that first order diffracted light is efficiently diffracted towards the detector at varying angles so that the angle of incidence, according to wavelength, is such as is necessary to produce a peak response in the detector, for each wavelength concerned, so a range of wavelengths of light incident on the grating 20 wil l produce peak responses in the detector 22.
As shown in Figure 3, two components 24, 26 of light of wavelength L1 and L2 are shown arriving in parallel at the grating 20 and thereafter are seen to diverge at 28 and 30 respectively to be incident on the detector 22 at different angles of incidence A1 and A2 respectively. Where there are the correct angles of incidence for those wavelengths, a peak response is obtained from the detector for both.
Since the blazed grating will treat all wavelengths intermediate L1 and L2 in a similar manner, and cause differing divergencies and therefore differing angles of incidence in the detector, so a peak level of response can be obtained for all the wavelengths concerned.
International Bureau
INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT)
(51) International Patent Classification 4 (11) International Publication Number: WO 87/ 0486 H01L 31/10 Al (43) International Publication Date: 13 August 1987 (13.08.8
(21) International Application Number: PCT/GB87/00060 (81) Designated States: AT (European patent), BE (Eur pean patent), CH (European patent), DE (Europea
(22) International Filing Date: 29 January 1987 (29.01.87) patent), FR (European patent), GB (European p tent), IT (European patent), JP, LU (European p tent), NL (European patent), SE (European patent
(31) Priority Application Number: 8602525 US.
(32) Priority Date: 1 February 1986 (01.02.86)
(33) Priority Country : GB Published
With international search report. With amended claims.
(71) Applicant (for all designated States except US): PA
CONSULTING SERVICES LIMITED [GB/GB]; Hyde Park House, 60a Knightsbridge, London SW1X 7LE (GB).
(72) Inventor; and
(75) Inventor/Applicant (for US only) : SAWYERS, Craig [GB/GB]; 196 Icknield Way, Letchworth, Hertfordshire (GB).
(74) Agents: NASH, Keith, Wilfrid et al. ; Keith W. Nash & Co., Pearl Assurance House, 90-92 Regent Street, Cambridge CB2 1DP (GB).
(54) Title: LIGHT DETECTOR
(57) Abstract
A photodetector which comprises a surface-profiled Schottky barrier detector (22) having a peak response which is function of wavelength and of angle of incidence, and a blazed diffraction grating (20) positioned in front of the barri detector and having its dispersion selected so that its first order of diffracted light is incident on the barrier detector wit an angle of incidence (Al, A2) which so varies as substantially to compensate for the peak response function of the barri detector, thereby to produce a peak response from the barrier detector throughout a range of wavelengths. In this way, t bandwidth of the photodector can be controlled.
FOR THE PURPOSES OF INFORMATION ONLY
Codes used to identify States party to the PCT on the front pages of amphlets publishing international applications under the PCT.
AT Austria FR France ML Mali
AU Australia GA Gabon MR Mauritania
BB Barbados GB United Kingdom MW Malawi
BE Belgium HU Hungary NL Netherlands
BG Bulgaria IT Italy NO Norway
BJ Benin JP Japan RO Romania
BR Brazil KP Democratic People's Republic SD Sudan
CF Central African Republic of Korea SE Sweden
CG Congo KR Republic of Korea SN Senegal
CH Switzerland LI Liechtenstein su Soviet Union
CM Cameroon LK Sri Lanka TD Chad
DE Germany, Federal Republic of LU Luxembourg TG Togo
DK Denmark MC Monaco US United States of America
FI Finland MG Madagascar
Title; Light Detector
Field of invention
This invention concerns light detectors and is particularly concerned with the design of a wideband detector capable of responding to light over a range of wavelengths.
Background to the invention
A preferred form of photodetector is a Schottky barrier device. It is known to profile the surface of such devices with the result that the device exhibits a peak response as a function of the angle of incidence and wavelength of the incident light.
The advantage of a Schottky barrier detector having a profiled surface is the high speed of response, combined with the ease of fabrication. However, the response bandwidth for a given angle of incidence is very narrow - typically 5-50 nm, and it is an object of the present invention to provide a design of such a device which posseses a greater response bandwidth.
Summary of the invention
According to the present invention a photodetector comprises:
1. a Schottky barrier detector having a profiled surface which exhibits a high response to incident light whose wavelength and angle of incidence satisfy an equation of the form f (wavelength, angle of incidence) = K,
2. a blazed diffraction grating which will efficiently diffract the first diffracted order of light incident thereon, and whose dispersion is chosen to compensate for the variation in angle of incidence with wavelength of the response peak of the detector,
3. means for projecting or otherwise causing input light to be incident on the diffraction grating,
4. means positioning the grating relative to the profiled detector surface so that any first order light from the grating (caused by input light incident thereon), will be diffracted so as to be incident on the profiled surface of the detector.
The resulting combination of blazed diffraction grating and Schottky barrier detector will have a high response to any input light where wavelengh is within the range of compensation provided by the dispersion of the grating. By careful choice of the dispersion, so the bandwidth of the combination can be controlled.
The invention will be described by way of example, with reference to the accompanying drawings, in which:
Figure 1 shows a typical profiled Schottky barrier detector construction, with light incident thereon,
Figure 2 is a graphical representation of the response of such a device to change of wavelength and angle of incidence, and
Figure 3 shows diagrammatically an arrangement of grating and detector in accordance with the invention.
In Figure 1 two beams of light one of wavelength L1 and the other L2 are incident on a profiled surface 10 of a metalised silicon substrate 12, the metal layer being denoted by 14.
If the response is mapped against angle of incidence (with constant wavelength), it is found that, a peak in the detector output occurs at one particular angle, likewise if respons is mapped against changing wavelength, a peak is obtained at one particular wavelength if the angle of incidence remains constant.
Figure 2 shows the detector response against changing wavelength for two different angles of incidence A1 and A2. The curve 16 shows the response for the angle of incidence A1 and curve 18 that of an angle of incidence A2.
Figure 3 shows an arrangement of blazed grating 20 and detector 22 (which typically comprises a silicon substrate having a profiled upper surface which is coated by a thin metal layer, as shown in Figure 1. By arranging that the dispersion characteristic of the blazed grating is such that first order diffracted light is efficiently diffracted towards the detector at varying angles so that the angle of incidence, according to wavelength, is such as is necessary to produce a peak response in the detector, for each wavelength concerned, so a range of wavelengths of light incident on the grating 20 will produce peak responses in the detector 22.
As shown in Figure 3, two components 24, 26 of light of wavelength L1 and L2 are shown arriving in parallel at the grating 20 and thereafter are seen to diverge at 28 and 30 respectively to be incident on the detector 22 at different angles of incidence A1 and A2 respectively. Where there are the correct angles of incidence for those wavelengths, a peak response. is obtained from the detector for both.
Since the blazed grating will treat all wavelengths intermediate L1 and L2 in a similar manner, and cause differing divergencies and therefore differing angles of incidence in the detector, so a peak level of response can be obtained for all the wavelengths concerned.

Claims

Claims
1. A photodetector comprising
- a Schottky barrier detector having a profiled surface which exhibits a peak response to incident light as a fraction of the wavelength of the light and of its angle of incidence;
- a blazed diffraction grating which, in respect of the first diffracted order of light within a range of wavelengths incident thereon, has a dispersion chosen substantially to compensate for the variation in angle of incidence with wavelength of the peak response of the detector;
- means for projecting or otherwise causing input light to be incident on the diffraction grating; and
means positioning the grating relative to the profiled detector surface so that first order light from the grating (caused by input light incident thereon), will be diffracted so as to be incident on the profiled surface of the detector;
- wherein the Schottky barrier detector comprises a silicon substrate having a profiled surface with a thin metal layer of uniiform thickness deposited on said profiled surface.
2. A photodetector substantially as hereinbefore described with reference to the accompanying drawings.
3. A method of photodetection according to which a blazed diffraction grating is positioned in an incident beam of multiple wavelength light to direct the first order of diffracted light on to a Schottky barrier detector which exhibits a peak response as a function of the wavelength of the light and its angle of incidence on said barrier detector, and the diffraction grating has a dispersion such that, at least within a range of wavelengths, the angle at which light is incident on the barrier detector so varies as substantially to compensate the peak response function of said barrier detector and thereby produce a peak response throughout said range of wavelengths.
4. A method of photodetection substantially as hereinbefore described.
PCT/GB1987/000060 1986-02-01 1987-01-29 Light detector WO1987004861A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB8602525 1986-02-01
GB08602525A GB2186074A (en) 1986-02-01 1986-02-01 Photodetector with associated diffraction grating

Publications (1)

Publication Number Publication Date
WO1987004861A1 true WO1987004861A1 (en) 1987-08-13

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/GB1987/000060 WO1987004861A1 (en) 1986-02-01 1987-01-29 Light detector

Country Status (4)

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EP (1) EP0256074A1 (en)
JP (1) JPS63502631A (en)
GB (1) GB2186074A (en)
WO (1) WO1987004861A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5080725A (en) * 1987-12-17 1992-01-14 Unisearch Limited Optical properties of solar cells using tilted geometrical features
US6076565A (en) * 1997-08-08 2000-06-20 Theodore Sweeney & Company Adhesive fastener and method
US6012888A (en) * 1997-08-08 2000-01-11 Theodore Sweeney & Co. Adhesive fastener and method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4343532A (en) * 1980-06-16 1982-08-10 General Dynamics, Pomona Division Dual directional wavelength demultiplexer
GB2131229A (en) * 1982-11-30 1984-06-13 Western Electric Co Photodetector

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4343532A (en) * 1980-06-16 1982-08-10 General Dynamics, Pomona Division Dual directional wavelength demultiplexer
GB2131229A (en) * 1982-11-30 1984-06-13 Western Electric Co Photodetector

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Applied Physics Letters, Volume 46, No. 10, 15 May 1985 (Woodbury, N.Y., US), S.R.J. BRUECK et al.: "Enhanced Quantum Efficiency Internal Photoemission Detectors by Grating Coupling to Surface Plasma Waves", pages 915-917 see the whole document *
Electronics Letters, Volume 17, No. 20, October 1981, (London, GB), H. SAKAKI et al.: "New Optical Heterodyne Detector with Integrated Diffraction Grating", see pages 727-729 *

Also Published As

Publication number Publication date
EP0256074A1 (en) 1988-02-24
JPS63502631A (en) 1988-09-29
GB8602525D0 (en) 1986-03-05
GB2186074A (en) 1987-08-05

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