WO1986003337A1 - Process for fabricating dimensionally stable interconnect boards and product produced thereby - Google Patents

Process for fabricating dimensionally stable interconnect boards and product produced thereby Download PDF

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Publication number
WO1986003337A1
WO1986003337A1 PCT/US1985/002120 US8502120W WO8603337A1 WO 1986003337 A1 WO1986003337 A1 WO 1986003337A1 US 8502120 W US8502120 W US 8502120W WO 8603337 A1 WO8603337 A1 WO 8603337A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
conductive pattern
film
process defined
tape layer
Prior art date
Application number
PCT/US1985/002120
Other languages
French (fr)
Inventor
William A. Vitriol
Raymond L. Brown
Original Assignee
Hughes Aircraft Company
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Company filed Critical Hughes Aircraft Company
Priority to DE8585905959T priority Critical patent/DE3570013D1/en
Publication of WO1986003337A1 publication Critical patent/WO1986003337A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/142—Metallic substrates having insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/4867—Applying pastes or inks, e.g. screen printing
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
    • H05K3/4664—Adding a circuit layer by thick film methods, e.g. printing techniques or by other techniques for making conductive patterns by using pastes, inks or powders
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155—Manufacturing circuit on or in base
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155—Manufacturing circuit on or in base
    • Y10T29/49163—Manufacturing circuit on or in base with sintering of base
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155—Manufacturing circuit on or in base
    • Y10T29/49165—Manufacturing circuit on or in base by forming conductive walled aperture in base

Definitions

  • This invention relates generally to the fabrication of multilayer thick film interconnect circuit boards, and more particularly to a novel process for achieving improved electrical isolation and dimensional stability in these circuits and circuits produced by this process.
  • An interconnect circuit board is generally defined as the physical realization of electronic circuits or subsystems from a number of extremely small circuit elements electrically and mechanically interconnected on a substrate. Thick film circuits are fabricated by screen printing and firing conductive, resistive and insulating components onto a ceramic substrate to which active devices are then attached. It is frequently desirable to combine these diverse type electronic components in an arrangement so that they may be physically isolated and mounted adjacent one another in a single package and electrically connected to each other and/or to common connections extending from the package. These common connections may, for example, consist of predefined conductive patterns deposited on a common substrate, where the substrate also serves as a common supporting member for all electronic components and interconnections in the package.
  • a conventional approach to providing this above- described electrical isolation is to use some insulating medium to surround and electrically isolate the con ⁇ ductive pattern on the substrate and also to support and electrically isolate the above-substrate electronic components.
  • One method for achieving such electrical isolation is the so-called thick film process wherein individual conductor and dielectric compositions in paste form are sequentially deposited on insulating substrates and then fired, one layer of material at a time, in order to build up a thick film, multilayer circuit.
  • a common method for depositing these thick film pastes involves the use of a screen printing process for depositing layers of a dielectric paste on the substrate surface and over any conductive patterns thereon and then sequentially firing the layers at a predetermined elevated temperature in order to build up a "thick film" of a preferred thickness.
  • This prior art thick film process has been employed to maintain good fixed registration (position accuracy) and dimensional stability of the film in the x and y lateral directions as a result of being fired directly on the substrate and thus being positionally secured and permanently referenced to the substrate.
  • a disadvantage of this thick film process is that voids can be formed in the thick film dielectric material during the sequential printing and firing pro ⁇ cess.
  • these voids often produce undesirable holes, cavities or other structural nonuni- formities in the completed dielectric thick film layer that can result in shorting between the conductor layers of the circuit.
  • flow of dielectric material at the edge of the openings causes the vias to be reduced on site and thus limits the minimum dimension of vias produced by this process.
  • a third disadvantage of the thick film prior art approach is that the top bonding conductor traces are typically rough and/or rounded as a result of being printed over numerous levels of conductor and dielectric. This goemetry or surface topography can reduce the reliability of secondary interconnections, such as wire bonds, made to the surface so treated.
  • This techology utilizes dielectric material formed into sheets which are known in the art as "green tape". These sheets of green tape are then either metallized to make a ground plane, signal plane, bonding plane, or the like, or they are formed with via holes and back filled with metallization to form insulating layers. Individual sheets of this green tape are then stacked on each other, laminated together using a chosen temperature and pressure, and then fired at a desired elevated temperature. When alumina is chosen for the insulating material, tungsten, molybdenum or molymanganese is typically used for metallization, and the part is fired to about 1,600°C in a H2 reducing atmosphere.
  • the general purpose of this invention is to provide a new and improved process for fabricating thick film hybrid circuits of the type generally described above, which eliminates the x and y dimensional instability problem of the above-described cofired ceramic process and,, at the same time, eliminates the formation of voids, material flow, and structural nonuniformity problems of the above thick film process.
  • the new process according to the present invention provides a reduction in fabrication steps relative to that of the prior art thick film process.
  • inter- connection circuitry includes providing an insulating substrate with a predefined conductive pattern formed thereon which may be processed by known techniques, i.e., screen printing and firing. Thereafter, a pyrolizable dielectric film of a chosen thickness, and including an inorganic filler material and an organic binder material, is processed to form vias therein using known techniques, such as mechanical punching. 'The dielectric film is then positioned on top of and registered to the substrate surface and over the conductive pattern thereon where it conforms to the geometry of the conductive pattern. This dielectric film is also referred to in this art as "green tape.”
  • This composite structure is then placed in a laminating press where the green tape is "transferred" to the substrate using a chosen temperature, pressure and time.
  • a suitable laminating schedule would be 60°C, 1,000 psi and 5 minutes.
  • the part is placed in a furnace and heated to a predetermined elevated temperature sufficient to drive off the organic binder from the dielectric film and simultaneously fuse the inorganic filler material as a uniform dielectric layer to both the underlying substrate and the conductive pattern thereon.
  • This firing temperature is typically 850°C to 1,000°C, but can be as low as 500°C for special applications.
  • FIGS. 1-6 illustrate schematically the step-by- step process according to the present invention in which a complete hybrid circuit (FIG. 6) is formed in preparation for a subsequent package encapsulation step (not shown).
  • This later packaging step may be used to encapsulate the hybrid circuit in FIG. 6 and may be selected from one of many encapsulation processes known and available in the art.
  • a starting substrate 10 which is a dielectric material, such as alumina.
  • the substrate 10 contains nominally 96% aluminum oxide, AI2O3, and the thickness typically varies from 25 to 100 mils.
  • the substrate of FIG. 1 is transferred to a screen printer where a conductive surface pattern, such as gold or copper, is screen printed in a desired geometry, using known screen printing techniques and fired in a furnace at typically 900°C in order to form the particular conductive pattern 12 shown in FIG. 2.
  • a glass-ceramic, dielectric, pliable green tape material 14 of typically 6-8 mils in thickness with vias 16 already formed therein is applied to the upper surface of the substructure of FIG. 2.
  • This material is an alumina-filled glass, which is also referred to as a "glass-ceramic".
  • This material will typically include 40%-60% alumina, AI2O3, and the "glass” will typically be lead aluminum borosilicate.
  • this tape is obtained from the E. I.
  • the composite structure of FIG. 3 is heated to a predetermined elevated temperature on the order of 900°C to drive off the organic binder material in the green tape 14 and thereby leave the sintered dielectric layer 18 as shown in FIG. 4.
  • the dielectric layer 18 is typically about 2 to 3 mils in thickness.
  • the vias 16 are filled with conductor metallization 20 using known techniques and dried.
  • a second conductive pattern 22 is then printed on the surface of the dielectric layer 18 as shown in FIG. 5, dried and co ⁇ fired with the via fill material.
  • individual components such as a transistor or integrated circuit package 26, and passive components 28, such as resistors or capacitors, may be bonded, for example, either directly to the top surface of the fired tape layer 14 in FIG. 6 or to the top of one of the conductive strips 30 thereon.
  • passive components 28 such as resistors or capacitors
  • the interconnect structure in FIG. 6 is only intended to show how. active or passive components may be die bonded and wire bonded to the upper surface of FIG. 5, and the present invention is intended to cover the process and product of FIG. 5 regardless of how this structure is subsequently processed to include active or passive electronic components thereon prior to further package encapsulation steps.

Abstract

Process for manufacturing hybrid circuit boards which includes providing an insulating substrate (10) with a conductive pattern (12) thereon and then firing a glass-ceramic tape layer (14) to the surface of the substrate (10). This tape layer (14) provides both electrical isolation and electrical connections between the substrate (10) and electrical conductors or electronic components which are subsequently bonded to or mounted on the top surface of the glass-ceramic tape layer (14). By providing vertical electrical conductors through vias in the tape layer (14) prior to firing the tape layer (14) directly on the substrate (10), good X and Y lateral dimension stability of the tape material is maintained. In addition, a high quality thick film glass-ceramic electrical isolation is achieved at a relatively low manufacturing cost.

Description

PROCESS FOR FABRICATING DIMENSIONALITY
STABLE INTERCONNECT BOARDS
AND PRODUCT PRODUCED THERBY BACKGROUND OF THE INVENTION
1. Field of the Invention
This invention relates generally to the fabrication of multilayer thick film interconnect circuit boards, and more particularly to a novel process for achieving improved electrical isolation and dimensional stability in these circuits and circuits produced by this process.
2 . Related Art An interconnect circuit board is generally defined as the physical realization of electronic circuits or subsystems from a number of extremely small circuit elements electrically and mechanically interconnected on a substrate. Thick film circuits are fabricated by screen printing and firing conductive, resistive and insulating components onto a ceramic substrate to which active devices are then attached. It is frequently desirable to combine these diverse type electronic components in an arrangement so that they may be physically isolated and mounted adjacent one another in a single package and electrically connected to each other and/or to common connections extending from the package. These common connections may, for example, consist of predefined conductive patterns deposited on a common substrate, where the substrate also serves as a common supporting member for all electronic components and interconnections in the package. Thus, it also frequently becomes necessary to provide a medium for electrically isolating adjacent portions of the conductive pattern or patterns on the substrate from one another as well as isolating these patterns from the electronic components mounted above the substrate. These components may, for example, be integrated circuits, discrete semiconductor devices, and other passive components such as resistors and capacitors.
A conventional approach to providing this above- described electrical isolation is to use some insulating medium to surround and electrically isolate the con¬ ductive pattern on the substrate and also to support and electrically isolate the above-substrate electronic components. One method for achieving such electrical isolation is the so-called thick film process wherein individual conductor and dielectric compositions in paste form are sequentially deposited on insulating substrates and then fired, one layer of material at a time, in order to build up a thick film, multilayer circuit. A common method for depositing these thick film pastes involves the use of a screen printing process for depositing layers of a dielectric paste on the substrate surface and over any conductive patterns thereon and then sequentially firing the layers at a predetermined elevated temperature in order to build up a "thick film" of a preferred thickness. This prior art thick film process has been employed to maintain good fixed registration (position accuracy) and dimensional stability of the film in the x and y lateral directions as a result of being fired directly on the substrate and thus being positionally secured and permanently referenced to the substrate. However, a disadvantage of this thick film process is that voids can be formed in the thick film dielectric material during the sequential printing and firing pro¬ cess. As a consequence, these voids often produce undesirable holes, cavities or other structural nonuni- formities in the completed dielectric thick film layer that can result in shorting between the conductor layers of the circuit. Additionally, when vias are created in the thick film dielectric, flow of dielectric material at the edge of the openings causes the vias to be reduced on site and thus limits the minimum dimension of vias produced by this process.
Another disadvantage of this thick film prior art approach is that the requirement for building up many multiple thin film layers in the more complex hybrid circuits results in an expensive process due to the number of individual processing steps involved.
A third disadvantage of the thick film prior art approach is that the top bonding conductor traces are typically rough and/or rounded as a result of being printed over numerous levels of conductor and dielectric. This goemetry or surface topography can reduce the reliability of secondary interconnections, such as wire bonds, made to the surface so treated.
Another prior art approach to the fabrication of hybrid microcircuits is the cofired ceramic process.
This techology utilizes dielectric material formed into sheets which are known in the art as "green tape". These sheets of green tape are then either metallized to make a ground plane, signal plane, bonding plane, or the like, or they are formed with via holes and back filled with metallization to form insulating layers. Individual sheets of this green tape are then stacked on each other, laminated together using a chosen temperature and pressure, and then fired at a desired elevated temperature. When alumina is chosen for the insulating material, tungsten, molybdenum or molymanganese is typically used for metallization, and the part is fired to about 1,600°C in a H2 reducing atmosphere.
One disadvantage of this cofired ceramic approach is that the dielectric film or tape will undergo shrinkage of as much as 20% in each of the X, Y and Z directions. This shrinkage results in a dimensional uncertainty in the fired part of typically +1%. This type of dimensional instability is unacceptable in the fabrication of many types of hybrid circuits, particularly large complex custom circuits used in tightly toleranced military applications.
SUMMARY OF THE INVENTION
The general purpose of this invention is to provide a new and improved process for fabricating thick film hybrid circuits of the type generally described above, which eliminates the x and y dimensional instability problem of the above-described cofired ceramic process and,, at the same time, eliminates the formation of voids, material flow, and structural nonuniformity problems of the above thick film process. In addition, the new process according to the present invention provides a reduction in fabrication steps relative to that of the prior art thick film process.
To accomplish this purpose, we have discovered and developed a novel process for fabricating inter- connection circuitry, which includes providing an insulating substrate with a predefined conductive pattern formed thereon which may be processed by known techniques, i.e., screen printing and firing. Thereafter, a pyrolizable dielectric film of a chosen thickness, and including an inorganic filler material and an organic binder material, is processed to form vias therein using known techniques, such as mechanical punching. 'The dielectric film is then positioned on top of and registered to the substrate surface and over the conductive pattern thereon where it conforms to the geometry of the conductive pattern. This dielectric film is also referred to in this art as "green tape."
This composite structure is then placed in a laminating press where the green tape is "transferred" to the substrate using a chosen temperature, pressure and time. A suitable laminating schedule would be 60°C, 1,000 psi and 5 minutes. Next, the part is placed in a furnace and heated to a predetermined elevated temperature sufficient to drive off the organic binder from the dielectric film and simultaneously fuse the inorganic filler material as a uniform dielectric layer to both the underlying substrate and the conductive pattern thereon. This firing temperature is typically 850°C to 1,000°C, but can be as low as 500°C for special applications.
Since the tape adheres to the substrate, there is no fired shrinkage in the X or Y direction. All shrinkage is in the Z direction, as is the case with screen printed and fired thick film paste. Therefore, vias will not move around or close during firing and the tape can be patterned prior to transferring it to the substrate. The next conductor layer in this vertical interconnect process is then screen printed on the fired tape dielectric and itself fired. This process is repeated until the hybrid circuit is built up to a desired vertical interconnect level and completed. By replacing a screen printed dielectric layer build-up process with a pre-punched dielectric tape layer, we have retained most, if not all, of the primary advantages of the above thick film process, while gaining many of the advantages of the cofired ceramic process.
The above general purpose and other more specific advantages and novel features of the invention will become more readily apparent in the following description of the accompanying drawing.
BRIEF DESCRIPTION OF THE DRAWINGS FIGS. 1-6 illustrate schematically the step-by- step process according to the present invention in which a complete hybrid circuit (FIG. 6) is formed in preparation for a subsequent package encapsulation step (not shown). This later packaging step may be used to encapsulate the hybrid circuit in FIG. 6 and may be selected from one of many encapsulation processes known and available in the art.
DESCRIPTION OF THE PREFERRED EMBODIMENTS Referring now to FIG. 1, there is shown a starting substrate 10 which is a dielectric material, such as alumina. The substrate 10 contains nominally 96% aluminum oxide, AI2O3, and the thickness typically varies from 25 to 100 mils.
The substrate of FIG. 1 is transferred to a screen printer where a conductive surface pattern, such as gold or copper, is screen printed in a desired geometry, using known screen printing techniques and fired in a furnace at typically 900°C in order to form the particular conductive pattern 12 shown in FIG. 2. In FIG. 3, a glass-ceramic, dielectric, pliable green tape material 14 of typically 6-8 mils in thickness with vias 16 already formed therein is applied to the upper surface of the substructure of FIG. 2. This material is an alumina-filled glass, which is also referred to as a "glass-ceramic". This material will typically include 40%-60% alumina, AI2O3, and the "glass" will typically be lead aluminum borosilicate. Presently, this tape is obtained from the E. I. DuPont Company of Wilmington, Delaware under the generic names of "green tape" or "ceramic tape," but under no specific trademark or tradename. This green or ceramic tape material is sufficiently pliable so that it adheres and conforms to the exposed top surface of the substrate 10 and the conductive pattern thereon.
Next, the composite structure of FIG. 3 is heated to a predetermined elevated temperature on the order of 900°C to drive off the organic binder material in the green tape 14 and thereby leave the sintered dielectric layer 18 as shown in FIG. 4. After firing, the dielectric layer 18 is typically about 2 to 3 mils in thickness.
The vias 16 are filled with conductor metallization 20 using known techniques and dried. A second conductive pattern 22 is then printed on the surface of the dielectric layer 18 as shown in FIG. 5, dried and co¬ fired with the via fill material.
Finally, individual components, such as a transistor or integrated circuit package 26, and passive components 28, such as resistors or capacitors, may be bonded, for example, either directly to the top surface of the fired tape layer 14 in FIG. 6 or to the top of one of the conductive strips 30 thereon. Then, it may be desirable, _or example, to make wire bonds 32, 34 from the transistor or I.C. 26 to the adjacent conductive strips 36, 38 or to make wire bonds 40, 42 from the passive component 28 to the adjacent conductive strips 44, 46. It should be understood, however, that the interconnect structure in FIG. 6 is only intended to show how. active or passive components may be die bonded and wire bonded to the upper surface of FIG. 5, and the present invention is intended to cover the process and product of FIG. 5 regardless of how this structure is subsequently processed to include active or passive electronic components thereon prior to further package encapsulation steps.
WJB.blm [245-4]

Claims

CLAIMSWhat is Claimed is;
1. A process for fabricating an electrical inter¬ connect board which includes:
(a) providing an insulating substrate having a conductive pattern formed thereon; . (b) forming via holes in a thick pyrolyzable film that includes an inorganic filler material and an organic binder material;
(c) transferring said film to the top of said conductive pattern and the surrounding insulating substrate surface; and
(d) heating said insulating substrate, said conductive pattern and said pyrolizable film to a pre¬ determined elevated temperature sufficient to drive off the organic binder material in said dielectric film and securely fuse the inorganic filler material therein as a uniform dielectric layer to both said substrate surface and the conductive pattern formed thereon, whereby dimensional stability of said dielectric film is preserved.
2. The process defined in Claim 1 wherein said insulating substrate contains about 96% alumina, AI2O3 , said inorganic material is a low temperature firing glass ceramic, and said pyrolizable film is transferred to said insulating substrate using a chosen temperature and pressure to cause said-film to adhere to said sub¬ strate during the subsequent processing and thereafter.
3. The process defined in Claims 1 or 2 wherein said substrate ranges from 88% to 99.5% alumina.
4. The process defined in Clailms 1 or 2 wherein said substrate is composed of beryllium oxide.
5. The process defined in Claims 1 or 2 wherein said pyrolyzable film is composed of aluminum oxide (AI2O3) and glass.
6. The process defined in Claims 1 or 2 wherein said conductive pattern and said insulating layer are cofired.
7. The process defined in Claims 1 or 2 wherein said conductive pattern is printed on said pyrolyzable film prior to transferring said tape to said substrate.
8. The process defined in Claims 1 or 2 wherein said substrate is composed of a metal such as copper, copper clad invar, stainless steel, or the like.
9. An electrical interconnect support structure for providing both support, electrical isolation, and vertical electrical interconnections to passive and active electronic components and the like in a hybrid- type circuit assembly and fabricated by the process of:
(a) providing an insulating substrate having a conductive pattern formed thereon;
(b) forming via holes in a thick pyrolyzable film that includes an inorganic filler material and an organic binder material;
(c) transferring said film to the top of said conductive pattern and the surrounding insulating substrate surface; and (d) heating said insulating substrate, said conductive pattern and said pyrolizable film to a pre¬ determined elevated temperature sufficient to drive off the organic binder material in said dielectric film and securely fuse the inorganic filler material therein as a uniform dielectric later to both said substrate surface and the conductive pattern formed thereon, whereby dimensional stability of said dielectric film is preserved.
10. A process for fabricating a thick film electrical interconnected structure which includes:
(a) providing an insulating substrate having a conductive pattern thereon; (b) providing a glass-ceramic tape layer having predefined vertical electrical conductors extending therethrough from one major surface thereof to the other;
(c) affixing said tape layer to the top surface of said insulating substrate and the conductive pattern thereon; and
(d) firing said tape layer and said insulating substrate at a predetermined elevated temperature, whereby a high quality thick film structure with good lateral dimensional stability may be achieved at a relatively low manufacturing cost.
11. The process defined in Claim 10 wherein said substrate is primarily alumina, AI2O3, and said tape layer includes from 40% to 60% alumina, a chosen borosilicate glass and an organic binder material which is driven off during firing.
12. The process defined in Claims 10 or 11 wherein said insulating substrate contains about 96% alumina, AI2O3, said tape layer is a low temperature firing glass ceramic, and said tape layer is transferred to said insulating substrate using a chosen temperature and pressure to cause said tape layer to adhere to said sub¬ strate during the subsequent processing and thereafter.
13. The process defined in Claims 10 or 11 wherein said substrate ranges from 88% to 99.5% alumina.
14. The process defined in Clail s 10 or 11 wherein said substrate is composed of beryllium oxide.
15. The process defined in Claims 10 or 11 wherein said tape layer is composed of aluminum oxide (AI2O3) and glass. e
16. The process defined in Claims 10 or 11 wherein said conductive pattern and said insulating layer are cofired.
17. The process defined in Claims 10 or 11 wherein said conductive pattern is printed on said tape layer prior to transferring said tape layer to said substrate.
18. The process defined in Claims 10 or 11 wherein said substrate is composed of a metal such as copper, copper-clad invar, stainless steel, or the like.
PCT/US1985/002120 1984-11-19 1985-10-28 Process for fabricating dimensionally stable interconnect boards and product produced thereby WO1986003337A1 (en)

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JPS62501181A (en) 1987-05-07
US4645552A (en) 1987-02-24
IL76759A (en) 1990-09-17
DE3570013D1 (en) 1989-06-08
EP0201583B1 (en) 1989-05-03
JPH0213958B2 (en) 1990-04-05
EP0201583A1 (en) 1986-11-20

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