USRE42849E1 - Lithographic apparatus and device manufacturing method - Google Patents
Lithographic apparatus and device manufacturing method Download PDFInfo
- Publication number
- USRE42849E1 USRE42849E1 US12/153,717 US15371708A USRE42849E US RE42849 E1 USRE42849 E1 US RE42849E1 US 15371708 A US15371708 A US 15371708A US RE42849 E USRE42849 E US RE42849E
- Authority
- US
- United States
- Prior art keywords
- substrate
- immersion liquid
- space
- liquid
- electrical potential
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related, expires
Links
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
Definitions
- the present invention relates to a lithographic apparatus and a device manufacturing method.
- a lithographic apparatus is a machine that applies a desired pattern onto a target portion of a substrate.
- Lithographic apparatus can be used, for example, in the manufacture of integrated circuits (ICs).
- a patterning structure such as a mask, may be used to generate a circuit pattern corresponding to an individual layer of the IC, and this pattern can be imaged onto a target portion (e.g. including part of one or several dies) on a substrate (e.g. a silicon wafer) that has a layer of radiation-sensitive material (resist).
- a single substrate will contain a network of adjacent target portions that are successively exposed.
- lithographic apparatus include so-called steppers, in which each target portion is irradiated by exposing an entire pattern onto the target portion in one go, and so-called scanners, in which each target portion is irradiated by scanning the pattern through the projection beam in a given direction (the “scanning” direction) while synchronously scanning the substrate parallel or anti-parallel to this direction.
- liquid supply system to provide liquid on only a localized area of the substrate and in between the final element of the projection system and the substrate using a liquid confinement system (the substrate generally has a larger surface area than the final element of the projection system).
- a liquid confinement system the substrate generally has a larger surface area than the final element of the projection system.
- liquid is supplied by at least one inlet IN onto the substrate W, preferably along the direction of movement of the substrate relative to the final element, and is removed by at least one outlet OUT after having passed under the projection system PL. That is, as the substrate is scanned beneath the final element in a ⁇ X direction, liquid is supplied at the +X side of the final element and taken up at the ⁇ X side.
- FIG. 2 shows the arrangement schematically in which liquid is supplied via inlet IN and is taken up on the other side of the element by outlet OUT which is connected to a low pressure source.
- the liquid is supplied along the direction of movement of the substrate relative to the final element, though this does not need to be the case.
- FIG. 3 shows the arrangement schematically in which liquid is supplied via inlet IN and is taken up on the other side of the element by outlet OUT which is connected to a low pressure source.
- the liquid is supplied along the direction of movement of the substrate relative to the final element, though this does not need to be the case.
- FIG. 3 shows the arrangement schematically in which liquid is supplied via inlet IN and is taken up on the other side of the element by outlet OUT which is connected to a low pressure source.
- the liquid is supplied along the direction of movement of the substrate relative to the final element, though this does not need to be the case.
- FIG. 3 shows the arrangement schematically in which liquid is supplied via inlet IN and is taken up on the other side of the element by outlet OUT
- Another solution which has been proposed is to provide the liquid supply system with a seal member which extends along at least a part of a boundary of the space between the final element of the projection system and the substrate table.
- the seal member is substantially stationary relative to the projection system in the XY plane though there may be some relative movement in the Z direction (in the direction of the optical axis).
- a seal is formed between the seal member and the surface of the substrate.
- the seal is a contactless seal such as a gas seal.
- seal members are clearly possible including those with different arrangements of inlets and outlets and also those which are asymmetric.
- a difficulty in immersion lithography has been found to be the existence of bubbles in the immersion liquid. These bubbles can be of any size, but bubbles of the order of a few ⁇ m have presented a particular problem. This is especially the case when the ⁇ m bubbles lie on the surface of the substrate or a sensor which is to be imaged because in this position the bubbles have a maximum disturbing influence on the projection beam.
- a lithographic apparatus including an illumination system configured to provide projection beam of radiation; a support configured to support a patterning structure, the patterning structure configured to impart the projection beam with a pattern in its cross-section; a substrate table configured to hold a substrate; a projection system configured to project the patterned beam onto a target portion of the substrate; a liquid supply system configured to at least partly fill a space between a final element of the projection system and the substrate with an immersion liquid; and a power source configured to apply a first electrical potential to a first object effective to move bubbles and/or particles in the immersion liquid.
- the first object forms a border of the space so that the positions of the bubbles in the immersion liquid in the space can be controlled.
- the first object can be in contact with the immersion liquid in a supply channel upstream of the space. In this way it is possible to avoid the generation of excessive electrical potential fields in the space which might be deleterious to sensors in the space or might be difficult to arrange for because of the limited space for objects under the projection system.
- the force on the bubbles may be increased as the first electrical potential could be made effective to repel the bubbles whilst the second electrical potential could be made effective to attract the bubbles, or vice versa.
- the substrate can be made to be the first object so that bubbles can be repelled from the substrate itself.
- the second object can be the final element of the projection system so that bubbles can be attracted towards that and thereby away from the substrate.
- the first and second objects may be the other way round.
- the first object still forms a border of the space but is positioned distal from the optical axis of the apparatus. In this way bubbles can be moved away from the optical axis of the apparatus so that the liquid through which imaging is actually taking place is substantially free of bubbles.
- a device manufacturing method including projecting a patterned beam of radiation onto a target portion of a substrate using a projection system; providing an immersion liquid between a final element of the projection system and the substrate; and applying a force on bubbles in the immersion liquid by applying a charge to an object in contact with the immersion liquid.
- any use of the terms “wafer” or “die” herein may be considered as synonymous with the more general terms “substrate” or “target portion”, respectively.
- the substrate referred to herein may be processed, before or after exposure, in for example a track (a tool that typically applies a layer of resist to a substrate and develops the exposed resist) or a metrology or inspection tool.
- the disclosure herein may be applied to such and other substrate processing tools.
- the substrate may be processed more than once, for example in order to create a multi-layer IC, so that the term substrate used herein may also refer to a substrate that already contains multiple processed layers.
- UV radiation e.g. having a wavelength of 365, 248, 193, 157 or 126 nm.
- patterning structure used herein should be broadly interpreted as referring to a structure that can be used to impart a projection beam with a pattern in its cross-section such as to create a pattern in a target portion of the substrate. It should be noted that the pattern imparted to the projection beam may not exactly correspond to the desired pattern in the target portion of the substrate. Generally, the pattern imparted to the projection beam will correspond to a particular functional layer in a device being created in the target portion, such as an integrated circuit.
- Patterning structures may be transmissive or reflective.
- Examples of patterning structures include masks, programmable mirror arrays, and programmable LCD panels.
- Masks are well known in lithography, and include mask types such as binary, alternating phase-shift, and attenuated phase-shift, as well as various hybrid mask types.
- An example of a programmable mirror array employs a matrix arrangement of small mirrors, each of which can be individually tilted so as to reflect an incoming radiation beam in different directions. In this manner, the reflected beam is patterned.
- the support structure may be a frame or table, for example, which may be fixed or movable as required and which may ensure that the patterning structure is at a desired position, for example with respect to the projection system. Any use of the terms, “reticle” or “mask” herein may be considered synonymous with the more general term “patterning structure”.
- projection system used herein should be broadly interpreted as encompassing various types of projection system, including refractive optical systems, reflective optical systems, and catadioptric optical systems, as appropriate for example for the exposure radiation being used, or for other factors such as the use of an immersion fluid or the use of a vacuum. Any use of the term “lens” herein may be considered as synonymous with the more general term “projection system”.
- the illumination system may also encompass various types of optical components, including refractive, reflective, and catadioptric optical components for directing, shaping, or controlling the projection beam of radiation, and such components may also be referred to below, collectively or singularly, as a “lens”.
- the lithographic apparatus may be of a type having two (dual stage) or more substrate tables (and/or two or more mask tables). In such “multiple stage” machines the additional tables may be used in parallel, or preparatory steps may be carried out on one or more tables while one or more other tables are being used for exposure.
- FIG. 1 depicts a lithographic apparatus according to an embodiment of the invention
- FIG. 2 illustrates, in cross-section, a liquid supply system
- FIG. 3 illustrates the liquid supply system of FIG. 2 ;
- FIG. 4 illustrates an embodiment of the present invention
- FIG. 5 illustrates another embodiment of the present invention.
- FIG. 1 schematically depicts a lithographic apparatus according to a particular embodiment of the invention.
- the apparatus includes an illumination system (illuminator) IL for providing a projection beam PB of radiation (e.g. UV radiation).
- a first support structure (e.g. a mask table) MT is configured to support a patterning structure (e.g. a mask) MA and is connected to a first positioning device PM that accurately positions the patterning structure with respect to a projection system.
- a substrate table (e.g. a wafer table) WT is configured to hold a substrate (e.g. a resist-coated wafer) W and is connected to a second positioning device PW that accurately positions the substrate with respect to the projection system.
- the projection system (e.g. a refractive projection lens) PL images a pattern imparted to the projection beam PB by the patterning structure MA onto a target portion C (e.g. including one or more dies) of the substrate W.
- the apparatus is of a transmissive type (e.g. employing a transmissive mask).
- the apparatus may be of a reflective type (e.g. employing a programmable mirror array of a type as referred to above).
- the illuminator IL receives a beam of radiation from a radiation source LA.
- the source and the lithographic apparatus may be separate entities, for example when the source is an excimer laser. In such cases, the source is not considered to form part of the lithographic apparatus and the radiation beam is passed from the source LA to the illuminator IL with the aid of a beam delivery system Ex including, for example, suitable directing mirrors and/or a beam expander. In other cases, the source may be an integral part of the apparatus, for example when the source is a mercury lamp.
- the source LA and the illuminator IL, together with the beam delivery system Ex if required, may be referred to as a radiation system.
- the illuminator IL may include an adjusting device AM to adjust the angular intensity distribution of the beam.
- an adjusting device AM to adjust the angular intensity distribution of the beam.
- the illuminator IL generally includes various other components, such as an integrator IN and a condenser CO.
- the illuminator provides a conditioned beam of radiation, referred to as the projection beam PB, having a desired uniformity and intensity distribution in its cross-section.
- the projection beam PB is incident on the mask MA, which is held on the mask table MT. Having traversed the mask MA, the projection beam PB passes through the lens PL, which focuses the beam onto a target portion C of the substrate W.
- the substrate table WT can be moved accurately, e.g. so as to position different target portions C in the path of the beam PB.
- the first positioning device PM and another position sensor can be used to accurately position the mask MA with respect to the path of the beam PB, e.g. after mechanical retrieval from a mask library, or during a scan.
- the mask table MT may be connected to a short stroke actuator only, or may be fixed.
- Mask MA and substrate W may be aligned using mask alignment marks M 1 , M 2 and substrate alignment marks P 1 , P 2 .
- the present invention is applicable to any type of liquid supply system.
- the supply system may be configured to supply any type of immersion liquid and may use any type of system for confining the immersion liquid between the projection system PL and the substrate W.
- FIG. 4 illustrates one type of liquid confinement system according to the present invention.
- the present invention could be applied to the liquid supply system of FIGS. 2 and 3 .
- the liquid supply system of FIG. 4 includes a barrier member 10 positioned below and surrounding the final element 20 of the projection system PL.
- the liquid is brought into the space 5 below the projection system and within the barrier member 10 .
- the barrier member 10 preferably extends a little above the final element of the projection system PL.
- a seal may be provided between the bottom of the barrier member 10 and the substrate W. This seal may, for example, be a gas seal or a hydrostatic seal.
- the barrier member 10 may be supported by the projection system PL or the base frame of the apparatus or in any other way including supporting its own weight on the substrate W.
- Immersion liquid is supplied to the space between the projection system PL and the substrate W through a conduit 30 .
- the immersion liquid is then removed from the space. This removal of liquid is not illustrated but may be in any way, for example by a low pressure source.
- Micro bubbles and small particles can be present in the immersion liquid and, if these are close to the surface of the substrate W during imaging, can deleteriously effect the quality of the projected image and the resulting product.
- the present invention addresses this issue drawing on the discovery made by the mining industry that small solid particles adhere to bubble surfaces in a liquid. It was found that electrical forces between micron size bubbles and the solid particles play an important role in the adhesion. It was found that bubbles in a liquid have, on their surface, an electrokinetic (or zeta) potential which results in a potential difference between the surface of the bubble and the fully disassociated ionic concentration in the body of the liquid. This also applies to small particles.
- a power source or voltage supply V (or charge, voltage, electrical field or potential difference generator or supply) is used to apply an electrical potential to one or more objects of the immersion apparatus.
- V or charge, voltage, electrical field or potential difference generator or supply
- the principle of operation is that if repulsion is required a potential difference between the fully disassociated ionic concentration of the liquid and the object is generated, which is of the same polarity as the potential difference between the fully disassociated ionic concentration in the body of the liquid and the surface of the bubble. If attraction between the object and the bubble is required the potential differences should have opposite polarity. In this way forces can be generated on the bubbles towards or away from the objects (e.g. electrodes) which are in contact with the immersion liquid.
- objects e.g. electrodes
- FIG. 4 several different objects have a potential or charge applied to them.
- the present invention will work with only one such object and also with any combination of objects, and indeed other objects not illustrated could be also or alternatively used.
- FIG. 4 six different objects are illustrated to which a potential or voltage or charge could be applied.
- the objects are in contact with the immersion liquid, though in principle this is not necessary.
- One of these objects is the substrate W which is preferably charged to the same polarity of electrical potential as the electrical potential of the surface of the bubbles. In this way the bubbles have a force on them directly away from the substrate W so that their effect on the projected image is minimized.
- the final element of the projection system or an object close to the final element 20 of the projection system PL can be charged to a potential opposite in polarity to the potential of the surface of the bubbles.
- the shape of the object (e.g., electrode) close to the final element 20 of a projection system PL could be any shape. It could be plate-like or annular so that the projection beam PB passes through the center of the object.
- the objects to be charged or have a voltage applied to them could be attached to a surface of the barrier member 10 .
- these objects are attached to the inner surface of the barrier member 10 .
- two electrodes 12 , 14 are present each on opposite sides of the barrier member and charged to opposite potentials. In this way the bubbles could be drawn to one or other of the electrodes 12 , 14 , perhaps in the direction of an immersion liquid outlet.
- one object or more objects may be provided around the inner side of the seal member 10 (in contact with the immersion liquid) which is/are charged to a potential with a polarity different to the polarity of the potential of the surface of the bubbles.
- Another place to use the present invention is upstream of the space 5 between the final element 20 of the projection system PL and the substrate W in the liquid supply system.
- oppositely charged and opposing plates (e.g., electrodes) 42 , 44 produce a force on the bubbles which is effective to move the bubbles, when the immersion liquid is in the space 5 , further away from the substrate W than they would be without the application of the electrical field upstream of the space 5 .
- the immersion liquid with a high concentration of bubbles, i.e. near the electrode 44 could even be removed and not supplied to the space 5 .
- the removed liquid could be subjected to a bubble removal process before being recycled in the liquid supply system.
- the potential on the objects should not be so high as to cause disassociation of the immersion liquid but should be high enough to provide a force on the bubbles such that the present invention is effective.
- typical potential differences applied to the objects are 5 mV to 5V, preferably 10 mV to 500 mV.
- An electrical field of 5 mV/mm to 500 mV/mm due to the application of the potential is preferred.
- a second power source/voltage supply/charge/voltage/electrical field or potential difference generator or supply V 2 is provided.
- the second power source V 2 supplies or generates a second electrical potential that is opposite in polarity to the electrical potential supplied or generated by the power source V.
- the second electrical potential may be of the same polarity as the electrokinetic potential of a surface of the bubbles and/or particles in the immersion liquid.
- the power source V is shown as applying the electrical potential to objects 12 , 20 , 42 , 44 and the second power source V 2 is shown as applying the second electrical potential to objects W, 14 , it should be appreciated that the first and second power sources V, V 2 may apply the electrical potentials to the objects in any combination.
Abstract
An immersion lithographic apparatus includes a voltage generator or power source that applies a potential difference to an object in contact with the immersion liquid such that bubbles and/or particles in the immersion liquid are either attracted or repelled from that object due to the electrokinetic potential of the surface of the bubble in the immersion liquid.
Description
More than one reissue application has been filed for the reissue of Pat. No. 7,050,146. The reissue applications are continuation reissue application No. 13/214,955 and parent reissue application No. 12/153,717 (the present application), all of which are reissue applications of Pat. No. 7,050,146.
1. Field of the Invention
The present invention relates to a lithographic apparatus and a device manufacturing method.
2. Description of the Related Art
A lithographic apparatus is a machine that applies a desired pattern onto a target portion of a substrate. Lithographic apparatus can be used, for example, in the manufacture of integrated circuits (ICs). In that circumstance, a patterning structure, such as a mask, may be used to generate a circuit pattern corresponding to an individual layer of the IC, and this pattern can be imaged onto a target portion (e.g. including part of one or several dies) on a substrate (e.g. a silicon wafer) that has a layer of radiation-sensitive material (resist). In general, a single substrate will contain a network of adjacent target portions that are successively exposed. Known lithographic apparatus include so-called steppers, in which each target portion is irradiated by exposing an entire pattern onto the target portion in one go, and so-called scanners, in which each target portion is irradiated by scanning the pattern through the projection beam in a given direction (the “scanning” direction) while synchronously scanning the substrate parallel or anti-parallel to this direction.
It has been proposed to immerse the substrate in the lithographic projection apparatus in a liquid having a relatively high refractive index, e.g. water, so as to fill a space between the final element of the projection system and the substrate. This enables imaging of smaller features because the exposure radiation will have a shorter wavelength in the liquid. (The effect of the liquid may also be regarded as increasing the effective NA of the system and also increasing the depth of focus.)
However, submersing the substrate or substrate and substrate table in a bath of liquid (see, for example, U.S. Pat. No. 4,509,852) means that there is a large body of liquid that must be accelerated during a scanning exposure. This requires additional or more powerful motors and turbulence in the liquid may lead to undesirable and unpredictable effects.
One of the solutions proposed is for a liquid supply system to provide liquid on only a localized area of the substrate and in between the final element of the projection system and the substrate using a liquid confinement system (the substrate generally has a larger surface area than the final element of the projection system). One way which has been proposed to arrange for this is disclosed in WO 99/49504. As illustrated in FIGS. 2 and 3 , liquid is supplied by at least one inlet IN onto the substrate W, preferably along the direction of movement of the substrate relative to the final element, and is removed by at least one outlet OUT after having passed under the projection system PL. That is, as the substrate is scanned beneath the final element in a −X direction, liquid is supplied at the +X side of the final element and taken up at the −X side. FIG. 2 shows the arrangement schematically in which liquid is supplied via inlet IN and is taken up on the other side of the element by outlet OUT which is connected to a low pressure source. In the illustration of FIG. 2 , the liquid is supplied along the direction of movement of the substrate relative to the final element, though this does not need to be the case. Various orientations and numbers of in- and out-lets positioned around the final element are possible. One example is illustrated in FIG. 3 in which four sets of an inlet with an outlet on either side are provided in a regular pattern around the final element.
Another solution which has been proposed is to provide the liquid supply system with a seal member which extends along at least a part of a boundary of the space between the final element of the projection system and the substrate table. The seal member is substantially stationary relative to the projection system in the XY plane though there may be some relative movement in the Z direction (in the direction of the optical axis). A seal is formed between the seal member and the surface of the substrate. Preferably the seal is a contactless seal such as a gas seal. Such a system is disclosed in European Patent Application No. 03252955.4 hereby incorporated in its entirety by reference.
Other types of seal members are clearly possible including those with different arrangements of inlets and outlets and also those which are asymmetric.
A difficulty in immersion lithography has been found to be the existence of bubbles in the immersion liquid. These bubbles can be of any size, but bubbles of the order of a few μm have presented a particular problem. This is especially the case when the μm bubbles lie on the surface of the substrate or a sensor which is to be imaged because in this position the bubbles have a maximum disturbing influence on the projection beam.
It is an aspect of the present invention to reduce the effect of bubbles in immersion liquid on the imaging quality in immersion lithography.
According to an aspect of the present invention, there is provided a lithographic apparatus including an illumination system configured to provide projection beam of radiation; a support configured to support a patterning structure, the patterning structure configured to impart the projection beam with a pattern in its cross-section; a substrate table configured to hold a substrate; a projection system configured to project the patterned beam onto a target portion of the substrate; a liquid supply system configured to at least partly fill a space between a final element of the projection system and the substrate with an immersion liquid; and a power source configured to apply a first electrical potential to a first object effective to move bubbles and/or particles in the immersion liquid.
In this way, it is possible to apply a force on bubbles in the immersion liquid in a direction either towards or away from the first object. This is because bubbles in the immersion liquid will have a natural electrokinetic potential which is a potential difference between the surface of the bubble and the fully dissociated ionic concentration in the body of the liquid. Thus, by choosing the first electrical potential to be either the same or opposite polarity to the electrokinetic potential of the bubble it can be determined whether the bubble moves towards or away from the first object. Thus, this system can be used to move bubbles in the immersion liquid to places where their effect on the imaging quality of the apparatus is minimized. The present invention works in the same way on small particles as it does on bubbles.
Preferably, the first object forms a border of the space so that the positions of the bubbles in the immersion liquid in the space can be controlled. Alternatively, the first object can be in contact with the immersion liquid in a supply channel upstream of the space. In this way it is possible to avoid the generation of excessive electrical potential fields in the space which might be deleterious to sensors in the space or might be difficult to arrange for because of the limited space for objects under the projection system.
It is desirable to have a second power source or voltage to apply a second electrical potential to a second object in contact with the immersion liquid. In this way, the force on the bubbles may be increased as the first electrical potential could be made effective to repel the bubbles whilst the second electrical potential could be made effective to attract the bubbles, or vice versa.
In one embodiment, the substrate can be made to be the first object so that bubbles can be repelled from the substrate itself. In another embodiment, the second object can be the final element of the projection system so that bubbles can be attracted towards that and thereby away from the substrate. The first and second objects may be the other way round.
In another embodiment, the first object still forms a border of the space but is positioned distal from the optical axis of the apparatus. In this way bubbles can be moved away from the optical axis of the apparatus so that the liquid through which imaging is actually taking place is substantially free of bubbles.
According to a further aspect of the present invention, there is provided a device manufacturing method including projecting a patterned beam of radiation onto a target portion of a substrate using a projection system; providing an immersion liquid between a final element of the projection system and the substrate; and applying a force on bubbles in the immersion liquid by applying a charge to an object in contact with the immersion liquid.
Although specific reference may be made in this text to the use of lithographic apparatus in the manufacture of ICs, it should be understood that the lithographic apparatus described herein may have other applications, such as the manufacture of integrated optical systems, guidance and detection patterns for magnetic domain memories, liquid-crystal displays (LCDs), thin-film magnetic heads, etc. One of ordinary skill will appreciate that, in the context of such alternative applications, any use of the terms “wafer” or “die” herein may be considered as synonymous with the more general terms “substrate” or “target portion”, respectively. The substrate referred to herein may be processed, before or after exposure, in for example a track (a tool that typically applies a layer of resist to a substrate and develops the exposed resist) or a metrology or inspection tool. Where applicable, the disclosure herein may be applied to such and other substrate processing tools. Further, the substrate may be processed more than once, for example in order to create a multi-layer IC, so that the term substrate used herein may also refer to a substrate that already contains multiple processed layers.
The terms “radiation” and “beam” used herein encompass all types of electromagnetic radiation, including ultraviolet (UV) radiation (e.g. having a wavelength of 365, 248, 193, 157 or 126 nm).
The term “patterning structure” used herein should be broadly interpreted as referring to a structure that can be used to impart a projection beam with a pattern in its cross-section such as to create a pattern in a target portion of the substrate. It should be noted that the pattern imparted to the projection beam may not exactly correspond to the desired pattern in the target portion of the substrate. Generally, the pattern imparted to the projection beam will correspond to a particular functional layer in a device being created in the target portion, such as an integrated circuit.
Patterning structures may be transmissive or reflective. Examples of patterning structures include masks, programmable mirror arrays, and programmable LCD panels. Masks are well known in lithography, and include mask types such as binary, alternating phase-shift, and attenuated phase-shift, as well as various hybrid mask types. An example of a programmable mirror array employs a matrix arrangement of small mirrors, each of which can be individually tilted so as to reflect an incoming radiation beam in different directions. In this manner, the reflected beam is patterned. In each example of a patterning structure, the support structure may be a frame or table, for example, which may be fixed or movable as required and which may ensure that the patterning structure is at a desired position, for example with respect to the projection system. Any use of the terms, “reticle” or “mask” herein may be considered synonymous with the more general term “patterning structure”.
The term “projection system” used herein should be broadly interpreted as encompassing various types of projection system, including refractive optical systems, reflective optical systems, and catadioptric optical systems, as appropriate for example for the exposure radiation being used, or for other factors such as the use of an immersion fluid or the use of a vacuum. Any use of the term “lens” herein may be considered as synonymous with the more general term “projection system”.
The illumination system may also encompass various types of optical components, including refractive, reflective, and catadioptric optical components for directing, shaping, or controlling the projection beam of radiation, and such components may also be referred to below, collectively or singularly, as a “lens”.
The lithographic apparatus may be of a type having two (dual stage) or more substrate tables (and/or two or more mask tables). In such “multiple stage” machines the additional tables may be used in parallel, or preparatory steps may be carried out on one or more tables while one or more other tables are being used for exposure.
Embodiments of the present invention will now be described, by way of example only, with reference to the accompanying schematic drawings in which corresponding reference symbols indicate corresponding parts, and in which:
As here depicted, the apparatus is of a transmissive type (e.g. employing a transmissive mask). Alternatively, the apparatus may be of a reflective type (e.g. employing a programmable mirror array of a type as referred to above).
The illuminator IL receives a beam of radiation from a radiation source LA. The source and the lithographic apparatus may be separate entities, for example when the source is an excimer laser. In such cases, the source is not considered to form part of the lithographic apparatus and the radiation beam is passed from the source LA to the illuminator IL with the aid of a beam delivery system Ex including, for example, suitable directing mirrors and/or a beam expander. In other cases, the source may be an integral part of the apparatus, for example when the source is a mercury lamp. The source LA and the illuminator IL, together with the beam delivery system Ex if required, may be referred to as a radiation system.
The illuminator IL may include an adjusting device AM to adjust the angular intensity distribution of the beam. Generally, at least the outer and/or inner radial extent (commonly referred to as σ-outer and σ-inner, respectively) of the intensity distribution in a pupil plane of the illuminator can be adjusted. In addition, the illuminator IL generally includes various other components, such as an integrator IN and a condenser CO. The illuminator provides a conditioned beam of radiation, referred to as the projection beam PB, having a desired uniformity and intensity distribution in its cross-section.
The projection beam PB is incident on the mask MA, which is held on the mask table MT. Having traversed the mask MA, the projection beam PB passes through the lens PL, which focuses the beam onto a target portion C of the substrate W. With the aid of the second positioning device PW and a position sensor IF (e.g. an interferometric device), the substrate table WT can be moved accurately, e.g. so as to position different target portions C in the path of the beam PB. Similarly, the first positioning device PM and another position sensor (which is not explicitly depicted in FIG. 1 ) can be used to accurately position the mask MA with respect to the path of the beam PB, e.g. after mechanical retrieval from a mask library, or during a scan. In general, movement of the object tables MT and WT will be realized with the aid of a long-stroke module (coarse positioning) and a short-stroke module (fine positioning), which form part of the positioning devices PM and PW. However, in the case of a stepper (as opposed to a scanner) the mask table MT may be connected to a short stroke actuator only, or may be fixed. Mask MA and substrate W may be aligned using mask alignment marks M1, M2 and substrate alignment marks P1, P2.
The depicted apparatus can be used in the following preferred modes:
- 1. In step mode, the mask table MT and the substrate table WT are kept essentially stationary, while an entire pattern imparted to the projection beam is projected onto a target portion C in a single “flash” (i.e. a single static exposure). The substrate table WT is then shifted in the X and/or Y direction so that a different target portion C can be exposed. In step mode, the maximum size of the exposure field limits the size of the target portion C imaged in a single static exposure.
- 2. In scan mode, the mask table MT and the substrate table WT are scanned synchronously while a pattern imparted to the projection beam is projected onto a target portion C (i.e. a single dynamic exposure). The velocity and direction of the substrate table WT relative to the mask table MT is determined by the (de-)magnification and image reversal characteristics of the projection system PL. In scan mode, the maximum size of the exposure field limits the width (in the non-scanning direction) of the target portion in a single dynamic exposure, whereas the length of the scanning motion determines the height (in the scanning direction) of the target portion.
- 3. In another mode, the mask table MT is kept essentially stationary holding a programmable patterning structure, and the substrate table WT is moved or scanned while a pattern imparted to the projection beam is projected onto a target portion C. In this mode, generally a pulsed radiation source is employed and the programmable patterning structure is updated as required after each movement of the substrate table WT or in between successive radiation pulses during a scan. This mode of operation can be readily applied to maskless lithography that utilizes programmable patterning structures, such as a programmable mirror array of a type as referred to above.
Combinations and/or variations on the above described modes of use or entirely different modes of use may also be employed.
The present invention is applicable to any type of liquid supply system. The supply system may be configured to supply any type of immersion liquid and may use any type of system for confining the immersion liquid between the projection system PL and the substrate W.
The liquid supply system of FIG. 4 includes a barrier member 10 positioned below and surrounding the final element 20 of the projection system PL. The liquid is brought into the space 5 below the projection system and within the barrier member 10. The barrier member 10 preferably extends a little above the final element of the projection system PL. Optionally, a seal may be provided between the bottom of the barrier member 10 and the substrate W. This seal may, for example, be a gas seal or a hydrostatic seal. The barrier member 10 may be supported by the projection system PL or the base frame of the apparatus or in any other way including supporting its own weight on the substrate W.
Immersion liquid is supplied to the space between the projection system PL and the substrate W through a conduit 30. The immersion liquid is then removed from the space. This removal of liquid is not illustrated but may be in any way, for example by a low pressure source.
Micro bubbles and small particles can be present in the immersion liquid and, if these are close to the surface of the substrate W during imaging, can deleteriously effect the quality of the projected image and the resulting product. The present invention addresses this issue drawing on the discovery made by the mining industry that small solid particles adhere to bubble surfaces in a liquid. It was found that electrical forces between micron size bubbles and the solid particles play an important role in the adhesion. It was found that bubbles in a liquid have, on their surface, an electrokinetic (or zeta) potential which results in a potential difference between the surface of the bubble and the fully disassociated ionic concentration in the body of the liquid. This also applies to small particles.
In the present invention, a power source or voltage supply V (or charge, voltage, electrical field or potential difference generator or supply) is used to apply an electrical potential to one or more objects of the immersion apparatus. The principle of operation is that if repulsion is required a potential difference between the fully disassociated ionic concentration of the liquid and the object is generated, which is of the same polarity as the potential difference between the fully disassociated ionic concentration in the body of the liquid and the surface of the bubble. If attraction between the object and the bubble is required the potential differences should have opposite polarity. In this way forces can be generated on the bubbles towards or away from the objects (e.g. electrodes) which are in contact with the immersion liquid.
In FIG. 4 several different objects have a potential or charge applied to them. The present invention will work with only one such object and also with any combination of objects, and indeed other objects not illustrated could be also or alternatively used.
In pure water, which is a candidate for use as an immersion liquid at 193 nm projection beam wavelength, it has been found that the surface potential of μm bubbles is about −50 mV. This potential will vary with bubble size and also with type of immersion liquid. However, the same principles as described here can be used for other immersion liquids and bubble sizes and the invention is fully applicable to those. Additives may be added to the immersion liquid to change the effect of the surface potential. CaCl2 and NaCl are suitable additives for this purpose.
In FIG. 4 , six different objects are illustrated to which a potential or voltage or charge could be applied. Preferably the objects are in contact with the immersion liquid, though in principle this is not necessary. One of these objects is the substrate W which is preferably charged to the same polarity of electrical potential as the electrical potential of the surface of the bubbles. In this way the bubbles have a force on them directly away from the substrate W so that their effect on the projected image is minimized. In combination with a negative potential on the substrate W, or by itself, the final element of the projection system or an object close to the final element 20 of the projection system PL can be charged to a potential opposite in polarity to the potential of the surface of the bubbles. This will have the effect of attracting the bubbles towards the final element 20 of the projection system PL and thereby away from the substrate W. The shape of the object (e.g., electrode) close to the final element 20 of a projection system PL could be any shape. It could be plate-like or annular so that the projection beam PB passes through the center of the object.
Alternatively, the objects to be charged or have a voltage applied to them could be attached to a surface of the barrier member 10. In FIG. 4 , these objects are attached to the inner surface of the barrier member 10. As illustrated, two electrodes 12, 14 are present each on opposite sides of the barrier member and charged to opposite potentials. In this way the bubbles could be drawn to one or other of the electrodes 12, 14, perhaps in the direction of an immersion liquid outlet. Alternatively, one object or more objects may be provided around the inner side of the seal member 10 (in contact with the immersion liquid) which is/are charged to a potential with a polarity different to the polarity of the potential of the surface of the bubbles. In this way bubbles in the immersion liquid in the space 5 between the final element 20 of the projection system PL and the substrate W will be drawn away from the optical axis of the apparatus thereby leaving the path of the projection beam PB to the substrate W substantially unhindered by bubbles.
Another place to use the present invention is upstream of the space 5 between the final element 20 of the projection system PL and the substrate W in the liquid supply system. In this case, as the immersion liquid passes along conduits 30 and through a housing 40, oppositely charged and opposing plates (e.g., electrodes) 42, 44 produce a force on the bubbles which is effective to move the bubbles, when the immersion liquid is in the space 5, further away from the substrate W than they would be without the application of the electrical field upstream of the space 5. The immersion liquid with a high concentration of bubbles, i.e. near the electrode 44, could even be removed and not supplied to the space 5. The removed liquid could be subjected to a bubble removal process before being recycled in the liquid supply system.
In all of the above examples, the higher the voltage applied by the voltage generator V the greater the force on the bubbles. The potential on the objects should not be so high as to cause disassociation of the immersion liquid but should be high enough to provide a force on the bubbles such that the present invention is effective. For an immersion liquid comprised mainly of water, typical potential differences applied to the objects are 5 mV to 5V, preferably 10 mV to 500 mV. An electrical field of 5 mV/mm to 500 mV/mm due to the application of the potential is preferred.
In FIG. 5 , a second power source/voltage supply/charge/voltage/electrical field or potential difference generator or supply V2 is provided. The second power source V2 supplies or generates a second electrical potential that is opposite in polarity to the electrical potential supplied or generated by the power source V. The second electrical potential may be of the same polarity as the electrokinetic potential of a surface of the bubbles and/or particles in the immersion liquid. Although the power source V is shown as applying the electrical potential to objects 12, 20, 42, 44 and the second power source V2 is shown as applying the second electrical potential to objects W, 14, it should be appreciated that the first and second power sources V, V2 may apply the electrical potentials to the objects in any combination.
While specific embodiments of the invention have been described above, it will be appreciated that the invention may be practiced otherwise than as described. The description is not intended to limit the invention.
Claims (45)
1. A lithographic apparatus, comprising:
an illumination system configured to provide a projection beam of radiation;
a support configured to support a patterning structure which is configured to impart the projection beam with a pattern in its cross-section;
a substrate table configured to hold a substrate;
a projection system configured to project the patterned beam onto a target portion of the substrate;
a liquid supply system configured to at least partly fill a space between the projection system and the substrate with an immersion liquid; and
a power source configured to apply a first electrical potential across the immersion liquid supplied by the liquid supply system to move at least one of bubbles and particles, when in the space, in the immersion liquid.
2. An apparatus according to claim 1 , wherein the first electrical potential is applied to a first object.
3. An apparatus according to claim 2 , wherein the first object is in contact with the immersion liquid.
4. An apparatus according to claim 2 , wherein the first object forms a border of the space.
5. An apparatus according to claim 2 , wherein the first object is in contact with the immersion liquid in a supply channel upstream of the space.
6. An apparatus according to claim 2 , wherein the first object is the substrate.
7. An apparatus according to claim 2 , wherein the first object lies in the optical axis of the apparatus.
8. An apparatus according to claim 2 , wherein the first object fonns forms a border of the space and is positioned distal from the optical axis of the apparatus.
9. An apparatus according to claim 2 , wherein the first object is positioned on a barrier member which extends along at least a part of a boundary of the space.
10. An apparatus according to claim 1 , wherein the first electrical potential is applied across the immersion liquid in the space.
11. An apparatus according to claim 1 , wherein the first electrical potential is applied across the immersion liquid outside the space.
12. An apparatus according to claim 11 , wherein the first electrical potential is applied across the immersion liquid in the liquid supply system.
13. An apparatus according to claim 1 , wherein the first electrical potential is effective to exert a force on at least one of bubbles and particles in the immersion liquid in a direction away from the substrate.
14. An apparatus according to claim 1 , further comprising a second power source configured to apply a second electrical potential across the immersion liquid.
15. An apparatus according to claim 14 , wherein the second electrical potential is opposite in polarity to the first electrical potential.
16. An apparatus according to claim 14 , wherein the second electrical potential is of the same polarity as an electrokinetic potential of a surface of at least one of bubbles and particles in the immersion liquid.
17. An apparatus according to claim 14 , wherein the second electrical potential is applied across the immersion liquid in the space.
18. An apparatus according to claim 14 , wherein the second electrical potential is applied across the immersion fluid outside the space.
19. An apparatus according to claim 14 , wherein the second electrical potential is applied to a second object.
20. An apparatus according to claim 19 , wherein the second object forms a border of the space.
21. An apparatus according to claim 19 , wherein the second object is in contact with the immersion liquid in a supply channel upstream of the space.
22. An apparatus according to claim 19 , wherein the second object is a final element of the projection system.
23. An apparatus according to claim 1 , wherein the first electrical potential is effective to exert a force on at least one of bubbles and particles in the immersion liquid in a direction such that when in the space, the at least one of bubbles and particles will be further from the substrate than if no electrical potential was applied across the immersion liquid.
24. An apparatus according to claim 1 , wherein the first electrical potential is between ±5 mV and ±5V.
25. An apparatus according to claim 1 , wherein the first electrical potential is between 10 mV and 500 mV.
26. An apparatus according to claim 1 , wherein the first electrical potential is effective to set up an electrical field of up to 500 mV/mm.
27. An apparatus according to claim 1 , wherein the first electrical potential is of different polarity to an electrokinetic potential of a surface of at least one of bubbles and particles in the immersion liquid.
28. A lithographic apparatus, comprising:
a support configured to support a patterning structure which is configured to impart a beam of radiation with a pattern in its cross-section;
a substrate table configured to hold a substrate;
a projection system configured to project the patterned beam onto a target portion of the substrate;
a liquid supply system configured to at least partly fill a space between the projection system and the substrate with an immersion liquid; and
the liquid supply system having means for moving at least one of bubbles and particles, when in the space, in the immersion liquid supplied by the liquid supply system by the application of a voltage to the immersion liquid, the bubbles and/or the particles.
29. A lithographic apparatus, comprising:
a support configured to support a patterning structure configured to impart a beam of radiation with a pattern in its cross-section;
a substrate table configured to hold a substrate;
a projection system configured to project the patterned beam onto a target portion of the substrate;
a liquid supply system configured to at least partly fill a space between the projection system and the substrate with an immersion liquid, wherein the liquid supply system comprises means for applying a charge to an object, the charge being the same or opposite in polarity to an electrokinetic potential of bubbles in the immersion liquid such that at least one of bubbles and particles, when in the space, in the immersion liquid supplied by the liquid supply system have a force on them in a direction away from or towards the object.
30. A lithographic apparatus, comprising:
a support configured to support a patterning structure which is configured to impart a beam of radiation with a pattern in its cross-section;
a substrate table configured to hold a substrate;
a projection system configured to project the patterned beam onto a target portion of the substrate;
a liquid supply system configured to at least partly fill a space between the projection system and the substrate with an immersion liquid;
the liquid supply system having a potential field generator configured to generate an electrical field in the immersion liquid effective to move at least one of bubbles and particles, when in the space, in the immersion liquid supplied by the liquid supply system.
31. A device manufacturing method, comprising:
projecting a patterned beam of radiation onto a target portion of a substrate using a projection system;
providing an immersion liquid from a liquid supply system to the space between the projection system and the substrate; and
applying a force on at least one of bubbles and particles, when in the space, in the immersion liquid provided by the liquid supply system by applying a charge to an object.
32. A method according to claim 31 , wherein the object forms a border of the space.
33. A method according to claim 31 , wherein the object is in contact with the immersion liquid in a supply channel upstream of the space.
34. A lithographic apparatus, comprising:
a substrate table configured to hold a substrate;
a projection system configured to project a patterned beam onto a target portion of the substrate;
a liquid supply system configured to at least partly fill a space between the projection system and the substrate with an immersion liquid; and
a force applicator constructed and arranged to move particles, when in the space, in the immersion liquid independent of the flow or pressure of the immersion liquid, the particles being of different material than the immersion liquid.
35. An apparatus according to claim 34, wherein the force applicator is constructed and arranged to move the particles (i) away from the substrate, or (ii) from an optical axis of the projection system, or (iii) towards a final optical element of the projection system, or (iv) towards a liquid confinement structure, or (v) towards an object close to a final optical element of the projection system, or (vi) any combination selected from (i)-(v).
36. An apparatus according to claim 34, wherein the force applicator comprises a power source.
37. An apparatus according to claim 36, wherein the power source is configured to apply a first electrical potential across the immersion liquid.
38. An apparatus according to claim 37, wherein the first electrical potential is applied to a first object.
39. An apparatus according to claim 38, wherein the first object is in contact with the immersion liquid.
40. An apparatus according to claim 38, wherein the first object forms a border of the space.
41. An apparatus according to claim 38, wherein the first object is in contact with the immersion liquid in a supply channel upstream of the space.
42. An apparatus according to claim 34, further comprising an illumination system configured to provide a projection beam of radiation.
43. An apparatus according to claim 34, further comprising a support configured to support a patterning structure, the patterning structure configured to impart a projection beam with a pattern in its cross-section.
44. A lithographic apparatus, comprising:
a substrate table configured to hold a substrate;
a projection system configured to project a patterned beam onto a target portion of the substrate;
a liquid supply system configured to at least partly fill a space between the projection system and the substrate with an immersion liquid; and
a force applicator constructed and arranged to move particles in the immersion liquid independent of the flow or pressure of the immersion liquid and from the substrate, from an optical axis of the projection system, or from both the substrate and the optical axis, the particles being of different material than the immersion liquid.
45. A lithographic apparatus, comprising:
a substrate table configured to hold a substrate;
a projection system configured to project a patterned beam onto a target portion of the substrate;
a liquid supply system configured to at least partly fill a space between the projection system and the substrate with an immersion liquid; and
a force applicator constructed and arranged in a supply channel upstream of the space to move particles, when in the space, in the immersion liquid independent of the flow or pressure of the immersion liquid, the particles being of different material than the immersion liquid.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/153,717 USRE42849E1 (en) | 2004-02-09 | 2008-05-22 | Lithographic apparatus and device manufacturing method |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/773,461 US7050146B2 (en) | 2004-02-09 | 2004-02-09 | Lithographic apparatus and device manufacturing method |
US12/153,717 USRE42849E1 (en) | 2004-02-09 | 2008-05-22 | Lithographic apparatus and device manufacturing method |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/773,461 Reissue US7050146B2 (en) | 2004-02-09 | 2004-02-09 | Lithographic apparatus and device manufacturing method |
Publications (1)
Publication Number | Publication Date |
---|---|
USRE42849E1 true USRE42849E1 (en) | 2011-10-18 |
Family
ID=34679392
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/773,461 Expired - Lifetime US7050146B2 (en) | 2004-02-09 | 2004-02-09 | Lithographic apparatus and device manufacturing method |
US12/153,717 Expired - Fee Related USRE42849E1 (en) | 2004-02-09 | 2008-05-22 | Lithographic apparatus and device manufacturing method |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/773,461 Expired - Lifetime US7050146B2 (en) | 2004-02-09 | 2004-02-09 | Lithographic apparatus and device manufacturing method |
Country Status (8)
Country | Link |
---|---|
US (2) | US7050146B2 (en) |
EP (1) | EP1562080B1 (en) |
JP (3) | JP4444135B2 (en) |
KR (1) | KR100665383B1 (en) |
CN (1) | CN100504610C (en) |
DE (1) | DE602005002155T2 (en) |
SG (1) | SG114712A1 (en) |
TW (1) | TWI266948B (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100128235A1 (en) * | 2003-06-11 | 2010-05-27 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US9036128B2 (en) | 2007-12-20 | 2015-05-19 | Asml Netherlands B.V. | Lithographic apparatus and in-line cleaning apparatus |
Families Citing this family (140)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9482966B2 (en) | 2002-11-12 | 2016-11-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
SG121818A1 (en) | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
US10503084B2 (en) | 2002-11-12 | 2019-12-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
CN101713932B (en) | 2002-11-12 | 2012-09-26 | Asml荷兰有限公司 | Lithographic apparatus and device manufacturing method |
US7110081B2 (en) * | 2002-11-12 | 2006-09-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
DE60335595D1 (en) | 2002-11-12 | 2011-02-17 | Asml Netherlands Bv | Immersion lithographic apparatus and method of making a device |
JP4352874B2 (en) * | 2002-12-10 | 2009-10-28 | 株式会社ニコン | Exposure apparatus and device manufacturing method |
DE10261775A1 (en) | 2002-12-20 | 2004-07-01 | Carl Zeiss Smt Ag | Device for the optical measurement of an imaging system |
KR20180126102A (en) | 2003-02-26 | 2018-11-26 | 가부시키가이샤 니콘 | Exposure apparatus and method, and method of producing apparatus |
KR101345474B1 (en) | 2003-03-25 | 2013-12-27 | 가부시키가이샤 니콘 | Exposure system and device production method |
DE602004020200D1 (en) * | 2003-04-07 | 2009-05-07 | Nippon Kogaku Kk | EXPOSURE DEVICE AND METHOD FOR PRODUCING A DEVICE |
KR101177331B1 (en) * | 2003-04-09 | 2012-08-30 | 가부시키가이샤 니콘 | Immersion lithography fluid control system |
JP4650413B2 (en) | 2003-04-10 | 2011-03-16 | 株式会社ニコン | Environmental system including a transfer area for an immersion lithography apparatus |
JP4656057B2 (en) * | 2003-04-10 | 2011-03-23 | 株式会社ニコン | Electro-osmotic element for immersion lithography equipment |
WO2004090634A2 (en) * | 2003-04-10 | 2004-10-21 | Nikon Corporation | Environmental system including vaccum scavange for an immersion lithography apparatus |
CN1771463A (en) * | 2003-04-10 | 2006-05-10 | 株式会社尼康 | Run-off path to collect liquid for an immersion lithography apparatus |
EP2613193B1 (en) | 2003-04-11 | 2016-01-13 | Nikon Corporation | Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine |
JP4837556B2 (en) | 2003-04-11 | 2011-12-14 | 株式会社ニコン | Optical element cleaning method in immersion lithography |
JP4582089B2 (en) * | 2003-04-11 | 2010-11-17 | 株式会社ニコン | Liquid jet recovery system for immersion lithography |
SG152078A1 (en) | 2003-04-17 | 2009-05-29 | Nikon Corp | Optical arrangement of autofocus elements for use with immersion lithography |
TWI295414B (en) | 2003-05-13 | 2008-04-01 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
WO2004102646A1 (en) * | 2003-05-15 | 2004-11-25 | Nikon Corporation | Exposure apparatus and method for manufacturing device |
TWI474380B (en) | 2003-05-23 | 2015-02-21 | 尼康股份有限公司 | A method of manufacturing an exposure apparatus and an element |
TWI612557B (en) | 2003-05-23 | 2018-01-21 | Nikon Corp | Exposure method and exposure apparatus and component manufacturing method |
KR101915914B1 (en) * | 2003-05-28 | 2018-11-06 | 가부시키가이샤 니콘 | Exposure method, exposure device, and device manufacturing method |
US7213963B2 (en) | 2003-06-09 | 2007-05-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7317504B2 (en) * | 2004-04-08 | 2008-01-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
TW201445617A (en) | 2003-06-13 | 2014-12-01 | 尼康股份有限公司 | Exposure method, substrate stage, exposure apparatus and method for manufacturing device |
TWI536430B (en) | 2003-06-19 | 2016-06-01 | 尼康股份有限公司 | An exposure apparatus, an exposure method, and an element manufacturing method |
EP1639391A4 (en) * | 2003-07-01 | 2009-04-29 | Nikon Corp | Using isotopically specified fluids as optical elements |
EP2853943B1 (en) * | 2003-07-08 | 2016-11-16 | Nikon Corporation | Wafer table for immersion lithography |
ATE513309T1 (en) * | 2003-07-09 | 2011-07-15 | Nikon Corp | EXPOSURE DEVICE AND METHOD FOR PRODUCING COMPONENTS |
WO2005006416A1 (en) * | 2003-07-09 | 2005-01-20 | Nikon Corporation | Linking unit, exposure apparatus and method for manufacturing device |
WO2005006418A1 (en) * | 2003-07-09 | 2005-01-20 | Nikon Corporation | Exposure apparatus and method for manufacturing device |
SG109000A1 (en) | 2003-07-16 | 2005-02-28 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
EP1500982A1 (en) | 2003-07-24 | 2005-01-26 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP4524669B2 (en) | 2003-07-25 | 2010-08-18 | 株式会社ニコン | Projection optical system inspection method and inspection apparatus |
EP1503244A1 (en) * | 2003-07-28 | 2005-02-02 | ASML Netherlands B.V. | Lithographic projection apparatus and device manufacturing method |
CN102323724B (en) | 2003-07-28 | 2014-08-13 | 株式会社尼康 | Liquid immersion exposure apparatus, producing method thereof, exposure apparatus and device producing method |
US7779781B2 (en) | 2003-07-31 | 2010-08-24 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
KR101094114B1 (en) * | 2003-08-26 | 2011-12-15 | 가부시키가이샤 니콘 | Optical element and exposure device |
US8149381B2 (en) * | 2003-08-26 | 2012-04-03 | Nikon Corporation | Optical element and exposure apparatus |
TWI245163B (en) | 2003-08-29 | 2005-12-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
EP2261740B1 (en) | 2003-08-29 | 2014-07-09 | ASML Netherlands BV | Lithographic apparatus |
EP1670039B1 (en) * | 2003-08-29 | 2014-06-04 | Nikon Corporation | Exposure apparatus and device producing method |
TWI263859B (en) | 2003-08-29 | 2006-10-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
EP3223074A1 (en) | 2003-09-03 | 2017-09-27 | Nikon Corporation | Apparatus and method for immersion lithography for recovering fluid |
WO2005029559A1 (en) * | 2003-09-19 | 2005-03-31 | Nikon Corporation | Exposure apparatus and device producing method |
KR101301804B1 (en) * | 2003-09-26 | 2013-08-29 | 가부시키가이샤 니콘 | Projection exposure apparatus, cleaning and maintenance methods of projection exposure apparatus, and method of producing device |
KR101739711B1 (en) * | 2003-09-29 | 2017-05-24 | 가부시키가이샤 니콘 | Exposure apparatus, exposure method, and device manufacturing method |
EP1672682A4 (en) | 2003-10-08 | 2008-10-15 | Zao Nikon Co Ltd | Substrate transporting apparatus and method, exposure apparatus and method, and device producing method |
ATE509367T1 (en) | 2003-10-08 | 2011-05-15 | Zao Nikon Co Ltd | EXPOSURE APPARATUS, SUBSTRATE SUPPORT METHOD, EXPOSURE METHOD AND METHOD FOR PRODUCING A DEVICE |
JP2005136364A (en) * | 2003-10-08 | 2005-05-26 | Zao Nikon Co Ltd | Substrate carrying device, exposure device and device manufacturing method |
TWI598934B (en) | 2003-10-09 | 2017-09-11 | Nippon Kogaku Kk | Exposure apparatus, exposure method, and device manufacturing method |
ATE490548T1 (en) | 2003-10-22 | 2010-12-15 | Nikon Corp | EXPOSURE DEVICE, EXPOSURE METHOD AND METHOD FOR PRODUCING COMPONENTS |
US7411653B2 (en) * | 2003-10-28 | 2008-08-12 | Asml Netherlands B.V. | Lithographic apparatus |
JP4295712B2 (en) | 2003-11-14 | 2009-07-15 | エーエスエムエル ネザーランズ ビー.ブイ. | Lithographic apparatus and apparatus manufacturing method |
US7545481B2 (en) | 2003-11-24 | 2009-06-09 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
TWI470371B (en) | 2003-12-03 | 2015-01-21 | 尼康股份有限公司 | An exposure apparatus, an exposure method, an element manufacturing method, and an optical component |
WO2005057635A1 (en) * | 2003-12-15 | 2005-06-23 | Nikon Corporation | Projection exposure apparatus, stage apparatus, and exposure method |
US20070081133A1 (en) * | 2004-12-14 | 2007-04-12 | Niikon Corporation | Projection exposure apparatus and stage unit, and exposure method |
KR101499405B1 (en) | 2003-12-15 | 2015-03-05 | 가부시키가이샤 니콘 | Stage system, exposure apparatus and exposure method |
US7589818B2 (en) * | 2003-12-23 | 2009-09-15 | Asml Netherlands B.V. | Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus |
US7394521B2 (en) * | 2003-12-23 | 2008-07-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
DE602005019689D1 (en) * | 2004-01-20 | 2010-04-15 | Zeiss Carl Smt Ag | EXPOSURE DEVICE AND MEASURING DEVICE FOR A PROJECTION SECTOR |
US7589822B2 (en) | 2004-02-02 | 2009-09-15 | Nikon Corporation | Stage drive method and stage unit, exposure apparatus, and device manufacturing method |
WO2005076321A1 (en) * | 2004-02-03 | 2005-08-18 | Nikon Corporation | Exposure apparatus and method of producing device |
US7050146B2 (en) | 2004-02-09 | 2006-05-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
KR20180042456A (en) | 2004-03-25 | 2018-04-25 | 가부시키가이샤 니콘 | Exposure apparatus and method for manufacturing device |
US7034917B2 (en) * | 2004-04-01 | 2006-04-25 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and device manufactured thereby |
US7898642B2 (en) | 2004-04-14 | 2011-03-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7379159B2 (en) | 2004-05-03 | 2008-05-27 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
WO2005111722A2 (en) * | 2004-05-04 | 2005-11-24 | Nikon Corporation | Apparatus and method for providing fluid for immersion lithography |
US7616383B2 (en) | 2004-05-18 | 2009-11-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7486381B2 (en) * | 2004-05-21 | 2009-02-03 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
CN101833247B (en) | 2004-06-04 | 2013-11-06 | 卡尔蔡司Smt有限责任公司 | Measuring system for the optical measurement of projecting object lens of micro-lithography projection exposure system |
CN105467775B (en) | 2004-06-09 | 2018-04-10 | 株式会社尼康 | Exposure device and manufacturing method |
US7463330B2 (en) | 2004-07-07 | 2008-12-09 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP4894515B2 (en) | 2004-07-12 | 2012-03-14 | 株式会社ニコン | Exposure apparatus, device manufacturing method, and liquid detection method |
US7248332B2 (en) * | 2004-07-13 | 2007-07-24 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7304715B2 (en) | 2004-08-13 | 2007-12-04 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
WO2006019124A1 (en) * | 2004-08-18 | 2006-02-23 | Nikon Corporation | Exposure apparatus and device manufacturing method |
US7701550B2 (en) | 2004-08-19 | 2010-04-20 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7385670B2 (en) * | 2004-10-05 | 2008-06-10 | Asml Netherlands B.V. | Lithographic apparatus, cleaning system and cleaning method for in situ removing contamination from a component in a lithographic apparatus |
JP4961709B2 (en) * | 2004-10-13 | 2012-06-27 | 株式会社ニコン | Exposure apparatus, exposure method, and device manufacturing method |
US7397533B2 (en) * | 2004-12-07 | 2008-07-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7403261B2 (en) * | 2004-12-15 | 2008-07-22 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7880860B2 (en) * | 2004-12-20 | 2011-02-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP1681597B1 (en) | 2005-01-14 | 2010-03-10 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20090262316A1 (en) * | 2005-01-31 | 2009-10-22 | Nikon Corporation | Exposure apparatus and method for producing device |
US8692973B2 (en) | 2005-01-31 | 2014-04-08 | Nikon Corporation | Exposure apparatus and method for producing device |
US7282701B2 (en) | 2005-02-28 | 2007-10-16 | Asml Netherlands B.V. | Sensor for use in a lithographic apparatus |
JP2006269940A (en) * | 2005-03-25 | 2006-10-05 | Canon Inc | Exposure device and exposure method |
USRE43576E1 (en) | 2005-04-08 | 2012-08-14 | Asml Netherlands B.V. | Dual stage lithographic apparatus and device manufacturing method |
WO2006122578A1 (en) * | 2005-05-17 | 2006-11-23 | Freescale Semiconductor, Inc. | Contaminant removal apparatus and method therefor |
US20070085989A1 (en) * | 2005-06-21 | 2007-04-19 | Nikon Corporation | Exposure apparatus and exposure method, maintenance method, and device manufacturing method |
US7357768B2 (en) * | 2005-09-22 | 2008-04-15 | William Marshall | Recliner exerciser |
JP2007103658A (en) * | 2005-10-04 | 2007-04-19 | Canon Inc | Method and device for exposure as well as method of manufacturing device |
US7986395B2 (en) | 2005-10-24 | 2011-07-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion lithography apparatus and methods |
KR100724082B1 (en) | 2005-11-18 | 2007-06-04 | 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 | Megasonic immersion lithography exposure apparatus and method |
US8125610B2 (en) * | 2005-12-02 | 2012-02-28 | ASML Metherlands B.V. | Method for preventing or reducing contamination of an immersion type projection apparatus and an immersion type lithographic apparatus |
US20070124987A1 (en) * | 2005-12-05 | 2007-06-07 | Brown Jeffrey K | Electronic pest control apparatus |
KR100768849B1 (en) * | 2005-12-06 | 2007-10-22 | 엘지전자 주식회사 | Power supply apparatus and method for line conection type fuel cell system |
US7839483B2 (en) | 2005-12-28 | 2010-11-23 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and a control system |
US7649611B2 (en) | 2005-12-30 | 2010-01-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
KR101236426B1 (en) * | 2006-02-14 | 2013-02-22 | 삼성디스플레이 주식회사 | ink-jet printhead and purging method thereof |
US7893047B2 (en) * | 2006-03-03 | 2011-02-22 | Arch Chemicals, Inc. | Biocide composition comprising pyrithione and pyrrole derivatives |
DE102006021797A1 (en) | 2006-05-09 | 2007-11-15 | Carl Zeiss Smt Ag | Optical imaging device with thermal damping |
US7969548B2 (en) * | 2006-05-22 | 2011-06-28 | Asml Netherlands B.V. | Lithographic apparatus and lithographic apparatus cleaning method |
US8564759B2 (en) | 2006-06-29 | 2013-10-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and method for immersion lithography |
KR20090060270A (en) * | 2006-09-08 | 2009-06-11 | 가부시키가이샤 니콘 | Cleaning member, cleaning method and device manufacturing method |
WO2008053918A1 (en) * | 2006-10-31 | 2008-05-08 | Nikon Corporation | Liquid holding apparatus, liquid holding method, exposure apparatus, exposure method and device manufacturing method |
US7800731B2 (en) * | 2006-11-03 | 2010-09-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and apparatus for removing particles in immersion lithography |
US8654305B2 (en) * | 2007-02-15 | 2014-02-18 | Asml Holding N.V. | Systems and methods for insitu lens cleaning in immersion lithography |
US8817226B2 (en) | 2007-02-15 | 2014-08-26 | Asml Holding N.V. | Systems and methods for insitu lens cleaning using ozone in immersion lithography |
JP2010519722A (en) * | 2007-02-23 | 2010-06-03 | 株式会社ニコン | Exposure method, exposure apparatus, device manufacturing method, and immersion exposure substrate |
US8237911B2 (en) | 2007-03-15 | 2012-08-07 | Nikon Corporation | Apparatus and methods for keeping immersion fluid adjacent to an optical assembly during wafer exchange in an immersion lithography machine |
JP5055549B2 (en) * | 2007-03-22 | 2012-10-24 | 国立大学法人宇都宮大学 | Immersion exposure equipment |
US9013672B2 (en) * | 2007-05-04 | 2015-04-21 | Asml Netherlands B.V. | Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method |
US8947629B2 (en) | 2007-05-04 | 2015-02-03 | Asml Netherlands B.V. | Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method |
US8011377B2 (en) | 2007-05-04 | 2011-09-06 | Asml Netherlands B.V. | Cleaning device and a lithographic apparatus cleaning method |
US7866330B2 (en) * | 2007-05-04 | 2011-01-11 | Asml Netherlands B.V. | Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method |
US7916269B2 (en) | 2007-07-24 | 2011-03-29 | Asml Netherlands B.V. | Lithographic apparatus and contamination removal or prevention method |
US20090025753A1 (en) * | 2007-07-24 | 2009-01-29 | Asml Netherlands B.V. | Lithographic Apparatus And Contamination Removal Or Prevention Method |
SG151198A1 (en) * | 2007-09-27 | 2009-04-30 | Asml Netherlands Bv | Methods relating to immersion lithography and an immersion lithographic apparatus |
NL1035942A1 (en) * | 2007-09-27 | 2009-03-30 | Asml Netherlands Bv | Lithographic Apparatus and Method of Cleaning a Lithographic Apparatus. |
JP5017232B2 (en) * | 2007-10-31 | 2012-09-05 | エーエスエムエル ネザーランズ ビー.ブイ. | Cleaning apparatus and immersion lithography apparatus |
NL1036211A1 (en) * | 2007-12-03 | 2009-06-04 | Asml Netherlands Bv | Lithographic Apparatus and Device Manufacturing Method. |
NL1036187A1 (en) * | 2007-12-03 | 2009-06-04 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method. |
NL1036273A1 (en) * | 2007-12-18 | 2009-06-19 | Asml Netherlands Bv | Lithographic apparatus and method of cleaning a surface or an immersion lithographic apparatus. |
US8339572B2 (en) | 2008-01-25 | 2012-12-25 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
KR101448152B1 (en) * | 2008-03-26 | 2014-10-07 | 삼성전자주식회사 | Distance measuring sensor having vertical photogate and three dimensional color image sensor having the same |
US9176393B2 (en) | 2008-05-28 | 2015-11-03 | Asml Netherlands B.V. | Lithographic apparatus and a method of operating the apparatus |
GB2470049B (en) | 2009-05-07 | 2011-03-23 | Zeiss Carl Smt Ag | Optical imaging with reduced immersion liquid evaporation effects |
MX2012007581A (en) * | 2009-12-28 | 2012-07-30 | Pioneer Hi Bred Int | Sorghum fertility restorer genotypes and methods of marker-assisted selection. |
EP2381310B1 (en) | 2010-04-22 | 2015-05-06 | ASML Netherlands BV | Fluid handling structure and lithographic apparatus |
CN104238274B (en) * | 2013-06-19 | 2016-12-28 | 上海微电子装备有限公司 | Immersed photoetching machine immersion flow field maintains device and method |
CN104808326B (en) * | 2014-01-25 | 2017-10-24 | 清华大学 | A kind of servicing unit of light microscope |
CN104808325B (en) * | 2014-01-25 | 2017-10-24 | 清华大学 | A kind of method by optical microscope inspection nanostructured |
JP6456238B2 (en) * | 2015-05-14 | 2019-01-23 | ルネサスエレクトロニクス株式会社 | Manufacturing method of semiconductor device |
Citations (138)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3527684A (en) | 1967-03-13 | 1970-09-08 | Eastman Kodak Co | Method of increasing contrast in electrophoretic reproduction |
US3573975A (en) | 1968-07-10 | 1971-04-06 | Ibm | Photochemical fabrication process |
US3648587A (en) | 1967-10-20 | 1972-03-14 | Eastman Kodak Co | Focus control for optical instruments |
US4013554A (en) | 1974-05-17 | 1977-03-22 | Sachs-Systemtechnik Gmbh | Method and apparatus for purifying water contaminated with anodically oxidizable organic matter |
EP0023231A1 (en) | 1979-07-27 | 1981-02-04 | Tabarelli, Werner, Dr. | Optical lithographic method and apparatus for copying a pattern onto a semiconductor wafer |
US4346164A (en) | 1980-10-06 | 1982-08-24 | Werner Tabarelli | Photolithographic method for the manufacture of integrated circuits |
US4390273A (en) | 1981-02-17 | 1983-06-28 | Censor Patent-Und Versuchsanstalt | Projection mask as well as a method and apparatus for the embedding thereof and projection printing system |
US4396705A (en) | 1980-09-19 | 1983-08-02 | Hitachi, Ltd. | Pattern forming method and pattern forming apparatus using exposures in a liquid |
JPS58202448A (en) | 1982-05-21 | 1983-11-25 | Hitachi Ltd | Exposing device |
DD206607A1 (en) | 1982-06-16 | 1984-02-01 | Mikroelektronik Zt Forsch Tech | METHOD AND DEVICE FOR ELIMINATING INTERFERENCE EFFECTS |
US4480910A (en) | 1981-03-18 | 1984-11-06 | Hitachi, Ltd. | Pattern forming apparatus |
US4509852A (en) | 1980-10-06 | 1985-04-09 | Werner Tabarelli | Apparatus for the photolithographic manufacture of integrated circuit elements |
DD221263A1 (en) | 1983-11-01 | 1985-04-17 | Zeiss Jena Veb Carl | ARRANGEMENT FOR MONITORING A CAN LEVEL FOR LEVELING INSTRUMENTS |
DD221563A1 (en) | 1983-09-14 | 1985-04-24 | Mikroelektronik Zt Forsch Tech | IMMERSIONS OBJECTIVE FOR THE STEP-BY-STEP PROJECTION IMAGING OF A MASK STRUCTURE |
DD224448A1 (en) | 1984-03-01 | 1985-07-03 | Zeiss Jena Veb Carl | DEVICE FOR PHOTOLITHOGRAPHIC STRUCTURAL TRANSMISSION |
US4569739A (en) | 1984-12-31 | 1986-02-11 | Dorr-Oliver Incorporated | Electrofilter using an improved electrode assembly |
DD242880A1 (en) | 1983-01-31 | 1987-02-11 | Kuch Karl Heinz | DEVICE FOR PHOTOLITHOGRAPHIC STRUCTURAL TRANSMISSION |
FR2474708B1 (en) | 1980-01-24 | 1987-02-20 | Dme | HIGH-RESOLUTION MICROPHOTOLITHOGRAPHY PROCESS |
JPS6265326U (en) | 1985-10-16 | 1987-04-23 | ||
JPS62121417U (en) | 1986-01-24 | 1987-08-01 | ||
JPS63157419U (en) | 1987-03-31 | 1988-10-14 | ||
EP0418427A2 (en) | 1989-09-06 | 1991-03-27 | Eiichi Miyake | Exposure process |
US5040020A (en) | 1988-03-31 | 1991-08-13 | Cornell Research Foundation, Inc. | Self-aligned, high resolution resonant dielectric lithography |
US5121256A (en) | 1991-03-14 | 1992-06-09 | The Board Of Trustees Of The Leland Stanford Junior University | Lithography system employing a solid immersion lens |
JPH04305915A (en) | 1991-04-02 | 1992-10-28 | Nikon Corp | Adhesion type exposure device |
JPH04305917A (en) | 1991-04-02 | 1992-10-28 | Nikon Corp | Adhesion type exposure device |
US5223331A (en) | 1990-07-31 | 1993-06-29 | Matsushita Electric Industrial Co., Ltd. | Organic device and method for producing the same |
US5289001A (en) | 1989-08-07 | 1994-02-22 | Hitachi, Ltd. | Laser beam scanning apparatus having a variable focal distance device and the variable focal distance device for use in the apparatus |
JPH06124873A (en) | 1992-10-09 | 1994-05-06 | Canon Inc | Liquid-soaking type projection exposure apparatus |
JPH06168866A (en) | 1992-11-27 | 1994-06-14 | Canon Inc | Projection aligner immersed in liquid |
JPH06262005A (en) | 1993-03-11 | 1994-09-20 | Ishikawajima Harima Heavy Ind Co Ltd | Air bubble removing device |
JPH07132262A (en) | 1992-12-21 | 1995-05-23 | Tokyo Electron Ltd | Liquid treating device of immersion type |
JPH07220990A (en) | 1994-01-28 | 1995-08-18 | Hitachi Ltd | Pattern forming method and exposure apparatus therefor |
US5715039A (en) | 1995-05-19 | 1998-02-03 | Hitachi, Ltd. | Projection exposure apparatus and method which uses multiple diffraction gratings in order to produce a solid state device with fine patterns |
JPH1078649A (en) | 1996-09-03 | 1998-03-24 | Nec Yamaguchi Ltd | Cleaning device for reticle |
EP0834773A2 (en) | 1996-10-07 | 1998-04-08 | Nikon Corporation | Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus |
JPH10228661A (en) | 1997-02-14 | 1998-08-25 | Sony Corp | Master disk manufacturing aligner for optical recording medium |
JPH10255319A (en) | 1997-03-12 | 1998-09-25 | Hitachi Maxell Ltd | Master disk exposure device and method therefor |
JPH10303114A (en) | 1997-04-23 | 1998-11-13 | Nikon Corp | Immersion aligner |
JPH10340846A (en) | 1997-06-10 | 1998-12-22 | Nikon Corp | Aligner, its manufacture, exposing method and device manufacturing method |
US5900354A (en) | 1997-07-03 | 1999-05-04 | Batchelder; John Samuel | Method for optical inspection and lithography |
JPH11176727A (en) | 1997-12-11 | 1999-07-02 | Nikon Corp | Projection aligner |
WO1999049504A1 (en) | 1998-03-26 | 1999-09-30 | Nikon Corporation | Projection exposure method and system |
JP2000058436A (en) | 1998-08-11 | 2000-02-25 | Nikon Corp | Projection aligner and exposure method |
JP2000162761A (en) | 1998-09-22 | 2000-06-16 | Mitsui Chemicals Inc | Pellicle, its production and exposing method |
JP2000323396A (en) | 1999-05-13 | 2000-11-24 | Canon Inc | Exposure method, aligner, and manufacture thereof |
US6207331B1 (en) | 1997-07-07 | 2001-03-27 | Fuji Xerox Co., Ltd. | Aqueous image recording method for electrochemically depositing an image forming material |
JP2001091849A (en) | 1999-09-21 | 2001-04-06 | Olympus Optical Co Ltd | Liquid immersion objective lens for microscope |
US6236634B1 (en) | 1996-08-26 | 2001-05-22 | Digital Papyrus Corporation | Method and apparatus for coupling an optical lens to a disk through a coupling medium having a relatively high index of refraction |
US20020020821A1 (en) | 2000-08-08 | 2002-02-21 | Koninklijke Philips Electronics N.V. | Method of manufacturing an optically scannable information carrier |
US6413401B1 (en) | 1996-07-03 | 2002-07-02 | Caliper Technologies Corp. | Variable control of electroosmotic and/or electrophoretic forces within a fluid-containing structure via electrical forces |
US20020163629A1 (en) | 2001-05-07 | 2002-11-07 | Michael Switkes | Methods and apparatus employing an index matching medium |
US6496257B1 (en) | 1997-11-21 | 2002-12-17 | Nikon Corporation | Projection exposure apparatus and method |
US6560032B2 (en) | 2000-03-27 | 2003-05-06 | Olympus Optical Co., Ltd. | Liquid immersion lens system and optical apparatus using the same |
US20030123040A1 (en) | 2001-11-07 | 2003-07-03 | Gilad Almogy | Optical spot grid array printer |
US20030136668A1 (en) | 2001-06-18 | 2003-07-24 | Itsuki Kobata | Electrolytic processing device and substrate processing apparatus |
US6600547B2 (en) | 2001-09-24 | 2003-07-29 | Nikon Corporation | Sliding seal |
US6603130B1 (en) | 1999-04-19 | 2003-08-05 | Asml Netherlands B.V. | Gas bearings for use with vacuum chambers and their application in lithographic projection apparatuses |
WO2003077037A1 (en) | 2002-03-08 | 2003-09-18 | Carl Zeiss Smt Ag | Refractive projection objective for immersion lithography |
US6633365B2 (en) | 2000-12-11 | 2003-10-14 | Nikon Corporation | Projection optical system and exposure apparatus having the projection optical system |
US20040000627A1 (en) | 2002-06-28 | 2004-01-01 | Carl Zeiss Semiconductor Manufacturing Technologies Ag | Method for focus detection and an imaging system with a focus-detection system |
US20040017989A1 (en) | 2002-07-23 | 2004-01-29 | So Daniel W. | Fabricating sub-resolution structures in planar lightwave devices |
US20040036019A1 (en) | 2000-02-17 | 2004-02-26 | Goodley Paul C. | Micro matrix ion generator for analyzers |
US20040075895A1 (en) | 2002-10-22 | 2004-04-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus for method for immersion lithography |
US20040109237A1 (en) | 2002-12-09 | 2004-06-10 | Carl Zeiss Smt Ag | Projection objective, especially for microlithography, and method for adjusting a projection objective |
WO2004053952A1 (en) | 2002-12-10 | 2004-06-24 | Nikon Corporation | Exposure apparatus and method for manufacturing device |
WO2004053955A1 (en) | 2002-12-10 | 2004-06-24 | Nikon Corporation | Exposure system and device producing method |
WO2004053959A1 (en) | 2002-12-10 | 2004-06-24 | Nikon Corporation | Optical device and projection exposure apparatus using such optical device |
US20040119954A1 (en) | 2002-12-10 | 2004-06-24 | Miyoko Kawashima | Exposure apparatus and method |
WO2004053953A1 (en) | 2002-12-10 | 2004-06-24 | Nikon Corporation | Exposure apparatus and method for manufacturing device |
WO2004053596A2 (en) | 2002-12-10 | 2004-06-24 | Carl Zeiss Smt Ag | Method for adjusting a desired optical property of a positioning lens and microlithographic projection exposure system |
WO2004053958A1 (en) | 2002-12-10 | 2004-06-24 | Nikon Corporation | Exposure apparatus and method for manufacturing device |
WO2004053951A1 (en) | 2002-12-10 | 2004-06-24 | Nikon Corporation | Exposure method, exposure apparatus and method for manufacturing device |
WO2004053954A1 (en) | 2002-12-10 | 2004-06-24 | Nikon Corporation | Exposure apparatus and method for manufacturing device |
WO2004053956A1 (en) | 2002-12-10 | 2004-06-24 | Nikon Corporation | Exposure apparatus, exposure method and method for manufacturing device |
WO2004053950A1 (en) | 2002-12-10 | 2004-06-24 | Nikon Corporation | Exposure apparatus and method for manufacturing device |
WO2004053957A1 (en) | 2002-12-10 | 2004-06-24 | Nikon Corporation | Surface position detection apparatus, exposure method, and device porducing method |
WO2004055803A1 (en) | 2002-12-13 | 2004-07-01 | Koninklijke Philips Electronics N.V. | Liquid removal in a method and device for irradiating spots on a layer |
US20040125351A1 (en) | 2002-12-30 | 2004-07-01 | Krautschik Christof Gabriel | Immersion lithography |
WO2004057590A1 (en) | 2002-12-19 | 2004-07-08 | Koninklijke Philips Electronics N.V. | Method and device for irradiating spots on a layer |
WO2004057589A1 (en) | 2002-12-19 | 2004-07-08 | Koninklijke Philips Electronics N.V. | Method and device for irradiating spots on a layer |
JP2004193252A (en) | 2002-12-10 | 2004-07-08 | Nikon Corp | Exposing method and device manufacturing method |
WO2004019128A3 (en) | 2002-08-23 | 2004-10-28 | Nippon Kogaku Kk | Projection optical system and method for photolithography and exposure apparatus and method using same |
US20050024609A1 (en) | 2003-06-11 | 2005-02-03 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20050037269A1 (en) * | 2003-08-11 | 2005-02-17 | Levinson Harry J. | Method and apparatus for monitoring and controlling imaging in immersion lithography systems |
EP1039511A4 (en) | 1997-12-12 | 2005-03-02 | Nikon Corp | Projection exposure method and projection aligner |
JP2005072404A (en) | 2003-08-27 | 2005-03-17 | Sony Corp | Aligner and manufacturing method of semiconductor device |
JP2005079222A (en) | 2003-08-29 | 2005-03-24 | Nikon Corp | Immersion projection aligner mounting cleaning mechanism of optical component, and immersion optical component cleaning method |
US20050110973A1 (en) | 2003-11-24 | 2005-05-26 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20050132914A1 (en) | 2003-12-23 | 2005-06-23 | Asml Netherlands B.V. | Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus |
US20050175776A1 (en) | 2003-11-14 | 2005-08-11 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US6952253B2 (en) | 2002-11-12 | 2005-10-04 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US6954256B2 (en) | 2003-08-29 | 2005-10-11 | Asml Netherlands B.V. | Gradient immersion lithography |
US20050274898A1 (en) | 2002-12-03 | 2005-12-15 | Nikon Corporation | Pollutant removal method and apparatus, and exposure method and apparatus |
WO2005122218A1 (en) | 2004-06-09 | 2005-12-22 | Nikon Corporation | Exposure system and device production method |
US20060023185A1 (en) | 2003-04-11 | 2006-02-02 | Nikon Corporation | Cleanup method for optics in immersion lithography |
US7006209B2 (en) * | 2003-07-25 | 2006-02-28 | Advanced Micro Devices, Inc. | Method and apparatus for monitoring and controlling imaging in immersion lithography systems |
US7009682B2 (en) | 2002-11-18 | 2006-03-07 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20060050351A1 (en) | 2004-09-06 | 2006-03-09 | Tatsuhiko Higashiki | Liquid immersion optical tool, method for cleaning liquid immersion optical tool, and method for manufacturing semiconductor device |
US7014966B2 (en) * | 2003-09-02 | 2006-03-21 | Advanced Micro Devices, Inc. | Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems |
WO2006041086A1 (en) | 2004-10-13 | 2006-04-20 | Nikon Corporation | Exposure device, exposure method, and device manufacturing method |
US20060103818A1 (en) | 2004-11-18 | 2006-05-18 | International Business Machines Corporation | Method and apparatus for cleaning a semiconductor substrate in an immersion lithography system |
US7050146B2 (en) | 2004-02-09 | 2006-05-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP2006134999A (en) | 2004-11-04 | 2006-05-25 | Sony Corp | Immersion-type exposure device and method for cleaning holding base in immersion-type exposure device |
WO2006062065A1 (en) | 2004-12-06 | 2006-06-15 | Nikon Corporation | Maintenance method, maintenance apparatus, exposure apparatus and device manufacturing method |
US20060132731A1 (en) | 2004-12-20 | 2006-06-22 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7075616B2 (en) | 2002-11-12 | 2006-07-11 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7081943B2 (en) | 2002-11-12 | 2006-07-25 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7091502B2 (en) | 2004-05-12 | 2006-08-15 | Taiwan Semiconductor Manufacturing, Co., Ltd. | Apparatus and method for immersion lithography |
US20060232757A1 (en) | 2003-09-26 | 2006-10-19 | Nikon Corporation | Projection exposure apparatus, cleaning and maintenance methods of a projection exposure apparatus, and device manufacturing method |
US20060256316A1 (en) | 2003-10-08 | 2006-11-16 | Zao Nikon Co., Ltd. | Substrate transport apparatus and method, exposure apparatus and exposure method, and device fabricating method |
US7193232B2 (en) | 2002-11-12 | 2007-03-20 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method with substrate measurement not through liquid |
US20070064215A1 (en) | 2003-12-23 | 2007-03-22 | Koninklijke Philips Electronic, N.V. | Removable pellicle for immersion lithography |
US7199858B2 (en) | 2002-11-12 | 2007-04-03 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7213963B2 (en) | 2003-06-09 | 2007-05-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7224427B2 (en) | 2004-08-03 | 2007-05-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Megasonic immersion lithography exposure apparatus and method |
US7224434B2 (en) | 2004-10-19 | 2007-05-29 | Canon Kabushiki Kaisha | Exposure method |
US20070127001A1 (en) | 2005-12-02 | 2007-06-07 | Asml Netherlands B.V. | Method for preventing or reducing contamination of an immersion type projection apparatus and an immersion type lithographic apparatus |
US20070146657A1 (en) | 2005-12-27 | 2007-06-28 | Asml Netherlands B.V. | Lithographic apparatus and method |
US20070146658A1 (en) | 2005-12-27 | 2007-06-28 | Asml Netherlands B.V. | Lithographic apparatus and method |
US20070159610A1 (en) | 2004-02-10 | 2007-07-12 | Nikon Corporation | Exposure apparatus, device manufacturing method, maintenance method, and exposure method |
US20070206279A1 (en) | 2004-07-09 | 2007-09-06 | Vistec Semiconductor Systems Gmbh | Device for inspecting a microscopic component by means of an immersion objective |
US20070247600A1 (en) | 2003-05-23 | 2007-10-25 | Nikon Corporation | Exposure apparatus and method for producing device |
US20070251543A1 (en) | 2006-04-28 | 2007-11-01 | Asml Netherlands B.V. | Methods to clean a surface, a device manufacturing method, a cleaning assembly, cleaning apparatus, and lithographic apparatus |
US20070258072A1 (en) | 2004-06-21 | 2007-11-08 | Nikon Corporation | Exposure apparatus, method for cleaning memeber thereof, maintenance method for exposure apparatus, maintenance device, and method for producing device |
US7307263B2 (en) | 2004-07-14 | 2007-12-11 | Asml Netherlands B.V. | Lithographic apparatus, radiation system, contaminant trap, device manufacturing method, and method for trapping contaminants in a contaminant trap |
US20070285631A1 (en) | 2006-05-22 | 2007-12-13 | Asml Netherland B.V | Lithographic apparatus and lithographic apparatus cleaning method |
US7317504B2 (en) | 2004-04-08 | 2008-01-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7326522B2 (en) | 2004-02-11 | 2008-02-05 | Asml Netherlands B.V. | Device manufacturing method and a substrate |
US7359030B2 (en) | 2002-11-29 | 2008-04-15 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7385670B2 (en) | 2004-10-05 | 2008-06-10 | Asml Netherlands B.V. | Lithographic apparatus, cleaning system and cleaning method for in situ removing contamination from a component in a lithographic apparatus |
US7394521B2 (en) | 2003-12-23 | 2008-07-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7405417B2 (en) | 2005-12-20 | 2008-07-29 | Asml Netherlands B.V. | Lithographic apparatus having a monitoring device for detecting contamination |
US20080273181A1 (en) | 2007-05-04 | 2008-11-06 | Asml Netherlands B.V. | Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method |
US20080284990A1 (en) | 2007-05-04 | 2008-11-20 | Asml Netherlands B.V. | Cleaning device, a lithographic apparatus and a lithographic cleaning method |
US7462850B2 (en) | 2005-12-08 | 2008-12-09 | Asml Netherlands B.V. | Radical cleaning arrangement for a lithographic apparatus |
US20090027635A1 (en) | 2007-07-24 | 2009-01-29 | Asml Netherlands B.V. | Lithographic Apparatus and Contamination Removal or Prevention Method |
US20090027636A1 (en) | 2007-07-24 | 2009-01-29 | Asml Netherlands B.V. | Lithographic Apparatus, Reflective Member And A Method of Irradiating The Underside Of A Liquid Supply System |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE206607C (en) | ||||
DE242880C (en) | ||||
DE221563C (en) | ||||
DE224448C (en) | ||||
JPS6265326A (en) | 1985-09-18 | 1987-03-24 | Hitachi Ltd | Exposure device |
JPS62121417A (en) | 1985-11-22 | 1987-06-02 | Hitachi Ltd | Liquid-immersion objective lens device |
JPS63157419A (en) | 1986-12-22 | 1988-06-30 | Toshiba Corp | Fine pattern transfer apparatus |
DE60308161T2 (en) * | 2003-06-27 | 2007-08-09 | Asml Netherlands B.V. | Lithographic apparatus and method for making an article |
EP1494074A1 (en) * | 2003-06-30 | 2005-01-05 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
-
2004
- 2004-02-09 US US10/773,461 patent/US7050146B2/en not_active Expired - Lifetime
-
2005
- 2005-02-04 SG SG200500722A patent/SG114712A1/en unknown
- 2005-02-05 TW TW094103847A patent/TWI266948B/en not_active IP Right Cessation
- 2005-02-07 JP JP2005030038A patent/JP4444135B2/en not_active Expired - Fee Related
- 2005-02-07 KR KR1020050011358A patent/KR100665383B1/en not_active IP Right Cessation
- 2005-02-08 CN CNB2005100542275A patent/CN100504610C/en not_active Expired - Fee Related
- 2005-02-08 DE DE602005002155T patent/DE602005002155T2/en active Active
- 2005-02-08 EP EP05250691A patent/EP1562080B1/en active Active
-
2008
- 2008-05-22 US US12/153,717 patent/USRE42849E1/en not_active Expired - Fee Related
- 2008-12-02 JP JP2008307465A patent/JP4834055B2/en not_active Expired - Fee Related
-
2010
- 2010-12-27 JP JP2010290462A patent/JP2011066452A/en active Pending
Patent Citations (152)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3527684A (en) | 1967-03-13 | 1970-09-08 | Eastman Kodak Co | Method of increasing contrast in electrophoretic reproduction |
US3648587A (en) | 1967-10-20 | 1972-03-14 | Eastman Kodak Co | Focus control for optical instruments |
US3573975A (en) | 1968-07-10 | 1971-04-06 | Ibm | Photochemical fabrication process |
US4013554A (en) | 1974-05-17 | 1977-03-22 | Sachs-Systemtechnik Gmbh | Method and apparatus for purifying water contaminated with anodically oxidizable organic matter |
EP0023231A1 (en) | 1979-07-27 | 1981-02-04 | Tabarelli, Werner, Dr. | Optical lithographic method and apparatus for copying a pattern onto a semiconductor wafer |
FR2474708B1 (en) | 1980-01-24 | 1987-02-20 | Dme | HIGH-RESOLUTION MICROPHOTOLITHOGRAPHY PROCESS |
US4396705A (en) | 1980-09-19 | 1983-08-02 | Hitachi, Ltd. | Pattern forming method and pattern forming apparatus using exposures in a liquid |
US4346164A (en) | 1980-10-06 | 1982-08-24 | Werner Tabarelli | Photolithographic method for the manufacture of integrated circuits |
US4509852A (en) | 1980-10-06 | 1985-04-09 | Werner Tabarelli | Apparatus for the photolithographic manufacture of integrated circuit elements |
US4390273A (en) | 1981-02-17 | 1983-06-28 | Censor Patent-Und Versuchsanstalt | Projection mask as well as a method and apparatus for the embedding thereof and projection printing system |
US4480910A (en) | 1981-03-18 | 1984-11-06 | Hitachi, Ltd. | Pattern forming apparatus |
JPS58202448A (en) | 1982-05-21 | 1983-11-25 | Hitachi Ltd | Exposing device |
DD206607A1 (en) | 1982-06-16 | 1984-02-01 | Mikroelektronik Zt Forsch Tech | METHOD AND DEVICE FOR ELIMINATING INTERFERENCE EFFECTS |
DD242880A1 (en) | 1983-01-31 | 1987-02-11 | Kuch Karl Heinz | DEVICE FOR PHOTOLITHOGRAPHIC STRUCTURAL TRANSMISSION |
DD221563A1 (en) | 1983-09-14 | 1985-04-24 | Mikroelektronik Zt Forsch Tech | IMMERSIONS OBJECTIVE FOR THE STEP-BY-STEP PROJECTION IMAGING OF A MASK STRUCTURE |
DD221263A1 (en) | 1983-11-01 | 1985-04-17 | Zeiss Jena Veb Carl | ARRANGEMENT FOR MONITORING A CAN LEVEL FOR LEVELING INSTRUMENTS |
DD224448A1 (en) | 1984-03-01 | 1985-07-03 | Zeiss Jena Veb Carl | DEVICE FOR PHOTOLITHOGRAPHIC STRUCTURAL TRANSMISSION |
US4569739A (en) | 1984-12-31 | 1986-02-11 | Dorr-Oliver Incorporated | Electrofilter using an improved electrode assembly |
JPS6265326U (en) | 1985-10-16 | 1987-04-23 | ||
JPS62121417U (en) | 1986-01-24 | 1987-08-01 | ||
JPS63157419U (en) | 1987-03-31 | 1988-10-14 | ||
US5040020A (en) | 1988-03-31 | 1991-08-13 | Cornell Research Foundation, Inc. | Self-aligned, high resolution resonant dielectric lithography |
US5289001A (en) | 1989-08-07 | 1994-02-22 | Hitachi, Ltd. | Laser beam scanning apparatus having a variable focal distance device and the variable focal distance device for use in the apparatus |
JPH03209479A (en) | 1989-09-06 | 1991-09-12 | Sanee Giken Kk | Exposure method |
EP0418427A2 (en) | 1989-09-06 | 1991-03-27 | Eiichi Miyake | Exposure process |
US5223331A (en) | 1990-07-31 | 1993-06-29 | Matsushita Electric Industrial Co., Ltd. | Organic device and method for producing the same |
US5121256A (en) | 1991-03-14 | 1992-06-09 | The Board Of Trustees Of The Leland Stanford Junior University | Lithography system employing a solid immersion lens |
JPH04305915A (en) | 1991-04-02 | 1992-10-28 | Nikon Corp | Adhesion type exposure device |
JPH04305917A (en) | 1991-04-02 | 1992-10-28 | Nikon Corp | Adhesion type exposure device |
JPH06124873A (en) | 1992-10-09 | 1994-05-06 | Canon Inc | Liquid-soaking type projection exposure apparatus |
JPH06168866A (en) | 1992-11-27 | 1994-06-14 | Canon Inc | Projection aligner immersed in liquid |
EP0605103A1 (en) | 1992-11-27 | 1994-07-06 | Canon Kabushiki Kaisha | Projection apparatus for immersed exposure |
US5610683A (en) | 1992-11-27 | 1997-03-11 | Canon Kabushiki Kaisha | Immersion type projection exposure apparatus |
JPH07132262A (en) | 1992-12-21 | 1995-05-23 | Tokyo Electron Ltd | Liquid treating device of immersion type |
JPH06262005A (en) | 1993-03-11 | 1994-09-20 | Ishikawajima Harima Heavy Ind Co Ltd | Air bubble removing device |
JPH07220990A (en) | 1994-01-28 | 1995-08-18 | Hitachi Ltd | Pattern forming method and exposure apparatus therefor |
US5715039A (en) | 1995-05-19 | 1998-02-03 | Hitachi, Ltd. | Projection exposure apparatus and method which uses multiple diffraction gratings in order to produce a solid state device with fine patterns |
US6413401B1 (en) | 1996-07-03 | 2002-07-02 | Caliper Technologies Corp. | Variable control of electroosmotic and/or electrophoretic forces within a fluid-containing structure via electrical forces |
US6236634B1 (en) | 1996-08-26 | 2001-05-22 | Digital Papyrus Corporation | Method and apparatus for coupling an optical lens to a disk through a coupling medium having a relatively high index of refraction |
JPH1078649A (en) | 1996-09-03 | 1998-03-24 | Nec Yamaguchi Ltd | Cleaning device for reticle |
EP0834773A2 (en) | 1996-10-07 | 1998-04-08 | Nikon Corporation | Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus |
US5825043A (en) | 1996-10-07 | 1998-10-20 | Nikon Precision Inc. | Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus |
EP0834773A3 (en) | 1996-10-07 | 1999-07-28 | Nikon Corporation | Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus |
US6191429B1 (en) | 1996-10-07 | 2001-02-20 | Nikon Precision Inc. | Projection exposure apparatus and method with workpiece area detection |
JPH10228661A (en) | 1997-02-14 | 1998-08-25 | Sony Corp | Master disk manufacturing aligner for optical recording medium |
JPH10255319A (en) | 1997-03-12 | 1998-09-25 | Hitachi Maxell Ltd | Master disk exposure device and method therefor |
JPH10303114A (en) | 1997-04-23 | 1998-11-13 | Nikon Corp | Immersion aligner |
JPH10340846A (en) | 1997-06-10 | 1998-12-22 | Nikon Corp | Aligner, its manufacture, exposing method and device manufacturing method |
US5900354A (en) | 1997-07-03 | 1999-05-04 | Batchelder; John Samuel | Method for optical inspection and lithography |
US6207331B1 (en) | 1997-07-07 | 2001-03-27 | Fuji Xerox Co., Ltd. | Aqueous image recording method for electrochemically depositing an image forming material |
US6496257B1 (en) | 1997-11-21 | 2002-12-17 | Nikon Corporation | Projection exposure apparatus and method |
JPH11176727A (en) | 1997-12-11 | 1999-07-02 | Nikon Corp | Projection aligner |
EP1039511A4 (en) | 1997-12-12 | 2005-03-02 | Nikon Corp | Projection exposure method and projection aligner |
WO1999049504A1 (en) | 1998-03-26 | 1999-09-30 | Nikon Corporation | Projection exposure method and system |
JP2000058436A (en) | 1998-08-11 | 2000-02-25 | Nikon Corp | Projection aligner and exposure method |
JP2000162761A (en) | 1998-09-22 | 2000-06-16 | Mitsui Chemicals Inc | Pellicle, its production and exposing method |
US6603130B1 (en) | 1999-04-19 | 2003-08-05 | Asml Netherlands B.V. | Gas bearings for use with vacuum chambers and their application in lithographic projection apparatuses |
JP2000323396A (en) | 1999-05-13 | 2000-11-24 | Canon Inc | Exposure method, aligner, and manufacture thereof |
JP2001091849A (en) | 1999-09-21 | 2001-04-06 | Olympus Optical Co Ltd | Liquid immersion objective lens for microscope |
US20040036019A1 (en) | 2000-02-17 | 2004-02-26 | Goodley Paul C. | Micro matrix ion generator for analyzers |
US6560032B2 (en) | 2000-03-27 | 2003-05-06 | Olympus Optical Co., Ltd. | Liquid immersion lens system and optical apparatus using the same |
US20020020821A1 (en) | 2000-08-08 | 2002-02-21 | Koninklijke Philips Electronics N.V. | Method of manufacturing an optically scannable information carrier |
US6633365B2 (en) | 2000-12-11 | 2003-10-14 | Nikon Corporation | Projection optical system and exposure apparatus having the projection optical system |
US20040021844A1 (en) | 2000-12-11 | 2004-02-05 | Nikon Corporation | Projection optical system and exposure apparatus having the projection optical system |
US20020163629A1 (en) | 2001-05-07 | 2002-11-07 | Michael Switkes | Methods and apparatus employing an index matching medium |
US20030136668A1 (en) | 2001-06-18 | 2003-07-24 | Itsuki Kobata | Electrolytic processing device and substrate processing apparatus |
US6600547B2 (en) | 2001-09-24 | 2003-07-29 | Nikon Corporation | Sliding seal |
US20030123040A1 (en) | 2001-11-07 | 2003-07-03 | Gilad Almogy | Optical spot grid array printer |
US20030174408A1 (en) | 2002-03-08 | 2003-09-18 | Carl Zeiss Smt Ag | Refractive projection objective for immersion lithography |
WO2003077036A1 (en) | 2002-03-08 | 2003-09-18 | Carl Zeiss Smt Ag | High-aperture projection lens |
WO2003077037A1 (en) | 2002-03-08 | 2003-09-18 | Carl Zeiss Smt Ag | Refractive projection objective for immersion lithography |
US20040000627A1 (en) | 2002-06-28 | 2004-01-01 | Carl Zeiss Semiconductor Manufacturing Technologies Ag | Method for focus detection and an imaging system with a focus-detection system |
US20040017989A1 (en) | 2002-07-23 | 2004-01-29 | So Daniel W. | Fabricating sub-resolution structures in planar lightwave devices |
WO2004019128A3 (en) | 2002-08-23 | 2004-10-28 | Nippon Kogaku Kk | Projection optical system and method for photolithography and exposure apparatus and method using same |
US20040075895A1 (en) | 2002-10-22 | 2004-04-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus for method for immersion lithography |
US7199858B2 (en) | 2002-11-12 | 2007-04-03 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7193232B2 (en) | 2002-11-12 | 2007-03-20 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method with substrate measurement not through liquid |
US7081943B2 (en) | 2002-11-12 | 2006-07-25 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7075616B2 (en) | 2002-11-12 | 2006-07-11 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US6952253B2 (en) | 2002-11-12 | 2005-10-04 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7009682B2 (en) | 2002-11-18 | 2006-03-07 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7359030B2 (en) | 2002-11-29 | 2008-04-15 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20050274898A1 (en) | 2002-12-03 | 2005-12-15 | Nikon Corporation | Pollutant removal method and apparatus, and exposure method and apparatus |
US20040109237A1 (en) | 2002-12-09 | 2004-06-10 | Carl Zeiss Smt Ag | Projection objective, especially for microlithography, and method for adjusting a projection objective |
WO2004053959A1 (en) | 2002-12-10 | 2004-06-24 | Nikon Corporation | Optical device and projection exposure apparatus using such optical device |
WO2004053953A1 (en) | 2002-12-10 | 2004-06-24 | Nikon Corporation | Exposure apparatus and method for manufacturing device |
WO2004053952A1 (en) | 2002-12-10 | 2004-06-24 | Nikon Corporation | Exposure apparatus and method for manufacturing device |
WO2004053955A1 (en) | 2002-12-10 | 2004-06-24 | Nikon Corporation | Exposure system and device producing method |
US20040119954A1 (en) | 2002-12-10 | 2004-06-24 | Miyoko Kawashima | Exposure apparatus and method |
WO2004053957A1 (en) | 2002-12-10 | 2004-06-24 | Nikon Corporation | Surface position detection apparatus, exposure method, and device porducing method |
JP2004193252A (en) | 2002-12-10 | 2004-07-08 | Nikon Corp | Exposing method and device manufacturing method |
WO2004053950A1 (en) | 2002-12-10 | 2004-06-24 | Nikon Corporation | Exposure apparatus and method for manufacturing device |
WO2004053596A2 (en) | 2002-12-10 | 2004-06-24 | Carl Zeiss Smt Ag | Method for adjusting a desired optical property of a positioning lens and microlithographic projection exposure system |
WO2004053958A1 (en) | 2002-12-10 | 2004-06-24 | Nikon Corporation | Exposure apparatus and method for manufacturing device |
WO2004053956A1 (en) | 2002-12-10 | 2004-06-24 | Nikon Corporation | Exposure apparatus, exposure method and method for manufacturing device |
WO2004053951A1 (en) | 2002-12-10 | 2004-06-24 | Nikon Corporation | Exposure method, exposure apparatus and method for manufacturing device |
US20050264774A1 (en) | 2002-12-10 | 2005-12-01 | Nikon Corporation | Exposure apparatus and method for producing device |
WO2004053954A1 (en) | 2002-12-10 | 2004-06-24 | Nikon Corporation | Exposure apparatus and method for manufacturing device |
WO2004055803A1 (en) | 2002-12-13 | 2004-07-01 | Koninklijke Philips Electronics N.V. | Liquid removal in a method and device for irradiating spots on a layer |
WO2004057589A1 (en) | 2002-12-19 | 2004-07-08 | Koninklijke Philips Electronics N.V. | Method and device for irradiating spots on a layer |
WO2004057590A1 (en) | 2002-12-19 | 2004-07-08 | Koninklijke Philips Electronics N.V. | Method and device for irradiating spots on a layer |
US20040125351A1 (en) | 2002-12-30 | 2004-07-01 | Krautschik Christof Gabriel | Immersion lithography |
US20060023185A1 (en) | 2003-04-11 | 2006-02-02 | Nikon Corporation | Cleanup method for optics in immersion lithography |
US20070247600A1 (en) | 2003-05-23 | 2007-10-25 | Nikon Corporation | Exposure apparatus and method for producing device |
US7213963B2 (en) | 2003-06-09 | 2007-05-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20050024609A1 (en) | 2003-06-11 | 2005-02-03 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7006209B2 (en) * | 2003-07-25 | 2006-02-28 | Advanced Micro Devices, Inc. | Method and apparatus for monitoring and controlling imaging in immersion lithography systems |
US20050037269A1 (en) * | 2003-08-11 | 2005-02-17 | Levinson Harry J. | Method and apparatus for monitoring and controlling imaging in immersion lithography systems |
JP2005072404A (en) | 2003-08-27 | 2005-03-17 | Sony Corp | Aligner and manufacturing method of semiconductor device |
JP2005079222A (en) | 2003-08-29 | 2005-03-24 | Nikon Corp | Immersion projection aligner mounting cleaning mechanism of optical component, and immersion optical component cleaning method |
US6954256B2 (en) | 2003-08-29 | 2005-10-11 | Asml Netherlands B.V. | Gradient immersion lithography |
US7014966B2 (en) * | 2003-09-02 | 2006-03-21 | Advanced Micro Devices, Inc. | Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems |
US20060232757A1 (en) | 2003-09-26 | 2006-10-19 | Nikon Corporation | Projection exposure apparatus, cleaning and maintenance methods of a projection exposure apparatus, and device manufacturing method |
US20060256316A1 (en) | 2003-10-08 | 2006-11-16 | Zao Nikon Co., Ltd. | Substrate transport apparatus and method, exposure apparatus and exposure method, and device fabricating method |
US20050175776A1 (en) | 2003-11-14 | 2005-08-11 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20050110973A1 (en) | 2003-11-24 | 2005-05-26 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20070064215A1 (en) | 2003-12-23 | 2007-03-22 | Koninklijke Philips Electronic, N.V. | Removable pellicle for immersion lithography |
US20050132914A1 (en) | 2003-12-23 | 2005-06-23 | Asml Netherlands B.V. | Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus |
US7394521B2 (en) | 2003-12-23 | 2008-07-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7050146B2 (en) | 2004-02-09 | 2006-05-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20070159610A1 (en) | 2004-02-10 | 2007-07-12 | Nikon Corporation | Exposure apparatus, device manufacturing method, maintenance method, and exposure method |
US7326522B2 (en) | 2004-02-11 | 2008-02-05 | Asml Netherlands B.V. | Device manufacturing method and a substrate |
US7317504B2 (en) | 2004-04-08 | 2008-01-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7091502B2 (en) | 2004-05-12 | 2006-08-15 | Taiwan Semiconductor Manufacturing, Co., Ltd. | Apparatus and method for immersion lithography |
WO2005122218A1 (en) | 2004-06-09 | 2005-12-22 | Nikon Corporation | Exposure system and device production method |
US20070258072A1 (en) | 2004-06-21 | 2007-11-08 | Nikon Corporation | Exposure apparatus, method for cleaning memeber thereof, maintenance method for exposure apparatus, maintenance device, and method for producing device |
US20070206279A1 (en) | 2004-07-09 | 2007-09-06 | Vistec Semiconductor Systems Gmbh | Device for inspecting a microscopic component by means of an immersion objective |
US7307263B2 (en) | 2004-07-14 | 2007-12-11 | Asml Netherlands B.V. | Lithographic apparatus, radiation system, contaminant trap, device manufacturing method, and method for trapping contaminants in a contaminant trap |
US7224427B2 (en) | 2004-08-03 | 2007-05-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Megasonic immersion lithography exposure apparatus and method |
US20060050351A1 (en) | 2004-09-06 | 2006-03-09 | Tatsuhiko Higashiki | Liquid immersion optical tool, method for cleaning liquid immersion optical tool, and method for manufacturing semiconductor device |
US20080218712A1 (en) | 2004-10-05 | 2008-09-11 | Asml Netherlands B. V. | Lithographic apparatus, cleaning system and cleaning method for in situ removing contamination from a component in a lithographic apparatus |
US7385670B2 (en) | 2004-10-05 | 2008-06-10 | Asml Netherlands B.V. | Lithographic apparatus, cleaning system and cleaning method for in situ removing contamination from a component in a lithographic apparatus |
WO2006041086A1 (en) | 2004-10-13 | 2006-04-20 | Nikon Corporation | Exposure device, exposure method, and device manufacturing method |
US7224434B2 (en) | 2004-10-19 | 2007-05-29 | Canon Kabushiki Kaisha | Exposure method |
JP2006134999A (en) | 2004-11-04 | 2006-05-25 | Sony Corp | Immersion-type exposure device and method for cleaning holding base in immersion-type exposure device |
US20060103818A1 (en) | 2004-11-18 | 2006-05-18 | International Business Machines Corporation | Method and apparatus for cleaning a semiconductor substrate in an immersion lithography system |
WO2006062065A1 (en) | 2004-12-06 | 2006-06-15 | Nikon Corporation | Maintenance method, maintenance apparatus, exposure apparatus and device manufacturing method |
US20080002162A1 (en) | 2004-12-20 | 2008-01-03 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20060132731A1 (en) | 2004-12-20 | 2006-06-22 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20070127001A1 (en) | 2005-12-02 | 2007-06-07 | Asml Netherlands B.V. | Method for preventing or reducing contamination of an immersion type projection apparatus and an immersion type lithographic apparatus |
US7462850B2 (en) | 2005-12-08 | 2008-12-09 | Asml Netherlands B.V. | Radical cleaning arrangement for a lithographic apparatus |
US7405417B2 (en) | 2005-12-20 | 2008-07-29 | Asml Netherlands B.V. | Lithographic apparatus having a monitoring device for detecting contamination |
US20070146657A1 (en) | 2005-12-27 | 2007-06-28 | Asml Netherlands B.V. | Lithographic apparatus and method |
US20070146658A1 (en) | 2005-12-27 | 2007-06-28 | Asml Netherlands B.V. | Lithographic apparatus and method |
US20070251543A1 (en) | 2006-04-28 | 2007-11-01 | Asml Netherlands B.V. | Methods to clean a surface, a device manufacturing method, a cleaning assembly, cleaning apparatus, and lithographic apparatus |
US20070285631A1 (en) | 2006-05-22 | 2007-12-13 | Asml Netherland B.V | Lithographic apparatus and lithographic apparatus cleaning method |
US20080049201A1 (en) | 2006-05-22 | 2008-02-28 | Asml Netherlands B.V. | Lithographic apparatus and lithographic apparatus cleaning method |
US20080273181A1 (en) | 2007-05-04 | 2008-11-06 | Asml Netherlands B.V. | Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method |
US20080284990A1 (en) | 2007-05-04 | 2008-11-20 | Asml Netherlands B.V. | Cleaning device, a lithographic apparatus and a lithographic cleaning method |
US20090027635A1 (en) | 2007-07-24 | 2009-01-29 | Asml Netherlands B.V. | Lithographic Apparatus and Contamination Removal or Prevention Method |
US20090027636A1 (en) | 2007-07-24 | 2009-01-29 | Asml Netherlands B.V. | Lithographic Apparatus, Reflective Member And A Method of Irradiating The Underside Of A Liquid Supply System |
US20090025753A1 (en) | 2007-07-24 | 2009-01-29 | Asml Netherlands B.V. | Lithographic Apparatus And Contamination Removal Or Prevention Method |
Non-Patent Citations (46)
Title |
---|
"Depth-of-Focus Enhancement Using High Refractive Index Layer on the Imaging Layer", IBM Technical Disclosure Bulletin, vol. 27, No. 11, Apr. 1985, p. 6521. |
A. Suzuki, "Lithography Advances on Multiple Fronts", EEdesign, EE Times, Jan. 5, 2004. |
B. Lin, The kappa3 coefficient in nonparaxial lambda/NA scaling equations for resolution, depth of focus, and immersion lithography, J. Microlith., Microfab., Microsyst. 1(1):7-12 (2002). |
B. Lin, The κ3 coefficient in nonparaxial λ/NA scaling equations for resolution, depth of focus, and immersion lithography, J. Microlith., Microfab., Microsyst. 1(1):7-12 (2002). |
B.J. Lin, "Drivers, Prospects and Challenges for Immersion Lithography", TSMC, Inc., Sep. 2002. |
B.J. Lin, "Proximity Printing Through Liquid", IBM Technical Disclosure Bulletin, vol. 20, No. 11B, Apr. 1978, p. 4997. |
B.J. Lin, "The Paths to Subhalf-Micrometer Optical Lithography", SPIE vol. 922, Optical/Laser Microlithography (1988), pp. 256-269. |
B.W. Smith et al., "Immersion Optical Lithography at 193nm", Future Fab International, vol. 15, Jul. 11, 2003. |
English Translation of JP 06-262005 (dated Sep. 20, 1994). * |
European Search Report for EP Application No. 05250691.2, dated May 18, 2005. |
G. Owen et al., "1/8 mum Optical Lithography", J. Vac. Sci. Technol. B., vol. 10, No. 6, Nov./Dec. 1992, pp. 3032-3036. |
G. Owen et al., "⅛ μm Optical Lithography", J. Vac. Sci. Technol. B., vol. 10, No. 6, Nov./Dec. 1992, pp. 3032-3036. |
G.W.W. Stevens, "Reduction of Waste Resulting from Mask Defects", Solid State Technology, Aug. 1978, vol. 21, 008, pp. 68-72. |
H. Hata, "The Development of Immersion Exposure Tools", Litho Forum, International Sematech, Los Angeles, Jan. 27-29, 2004, Slide Nos. 1-22. |
H. Hogan, "New Semiconductor Lithography Makes a Splash", Photonics Spectra, Photonics TechnologyWorld, Oct. 2003 Edition, pp. 1-3. |
H. Kawata et al., "Fabrication of 0.2 mum Fine Patterns Using Optical Projection Lithography with an Oil Immersion Lens", Jpn. J. Appl. Phys. vol. 31 (1992), pp. 4174-4177. |
H. Kawata et al., "Optical Projection Lithography using Lenses with Numerical Apertures Greater than Unity", Microelectronic Engineering 9 (1989), pp. 31-36. |
H. Kawata et al., "Fabrication of 0.2 μm Fine Patterns Using Optical Projection Lithography with an Oil Immersion Lens", Jpn. J. Appl. Phys. vol. 31 (1992), pp. 4174-4177. |
J.A. Hoffnagle et al., "Liquid Immersion Deep-Ultraviolet Interferometric Lithography", J. Vac. Sci. Technol. B., vol. 17, No. 6, Nov./Dec. 1999, pp. 3306-3309. |
M. Switkes et al., "Immersion Lithography at 157 nm", J. Vac. Sci. Technol. B., vol. 19, No. 6, Nov./Dec. 2001, pp. 2353-2356. |
M. Switkes et al., "Immersion Lithography at 157 nm", MIT Lincoln Lab, Orlando 2001-1, Dec. 17, 2001. |
M. Switkes et al., "Immersion Lithography: Optics for the 50 nm Node", 157 Anvers-1, Sep. 4, 2002. |
Nikon Precision Europe GmbH, "Investor Relations-Nikon's Real Solutions", May 15, 2003. |
Notice of Reasons for Rejection for Japanese Patent Application No. 2005-030038 dated Jun. 2, 2008. |
S. Owa and N. Nagasaka, "Potential Performance and Feasibility of Immersion Lithography", NGL Workshop 2003, Jul. 10, 2003, Slide Nos. 1-33. |
S. Owa et al., "Advantage and Feasibility of Immersion Lithography", Proc. SPIE 5040 (2003). |
S. Owa et al., "Immersion Lithography; its potential performance and issues", SPIE Microlithography 2003, 5040-186, Feb. 27, 2003. |
S. Owa et al., "Update on 193nm immersion exposure tool", Litho Forum, International Sematech, Los Angeles, Jan. 27-29, 2004, Slide Nos. 1-51. |
T. Matsuyama et al., "Nikon Projection Lens Update", SPIE Microlithography 2004, 5377-65, Mar. 2004. |
U.S. Appl. No. 10/367,910, filed Feb. 19, 2003, Suwa et al. |
U.S. Appl. No. 10/698,012, filed Oct. 31, 2003, Flagello et al. |
U.S. Appl. No. 10/705,783, filed Nov. 12, 2003, Lof et al. |
U.S. Appl. No. 10/705,785, filed Nov. 12, 2003, Derksen et al. |
U.S. Appl. No. 10/705,804, filed Nov. 12, 2003, De Smit et al. |
U.S. Appl. No. 10/705,805, filed Nov. 12, 2003, Lof et al. |
U.S. Appl. No. 10/705,816, filed Nov. 12, 2003, Lof et al. |
U.S. Appl. No. 10/715,116, filed Nov. 18, 2003, Bleeker. |
U.S. Appl. No. 10/719,683, filed Nov. 24, 2003, Streekerk et al. |
U.S. Appl. No. 10/724,402, filed Dec. 1, 2003, Simon et al. |
U.S. Appl. No. 10/743,266, filed Dec. 23, 2003, Mulkens et al. |
U.S. Appl. No. 10/743,271, filed Dec. 23, 2003, Van Santen et al. |
U.S. Appl. No. 10/773,461, filed Feb. 9, 2004, Duineveld et al. |
U.S. Appl. No. 10/775,326, filed Feb. 11, 2004, Dierichs. |
U.S. Appl. No. 10/820,227, filed Apr. 8, 2004, De Smit. |
U.S. Appl. No. 10/857,614, filed Jun. 1, 2004, Lof et al. |
U.S. Appl. No. 10/860,662, filed Jun. 4, 2004, De Smit. |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100128235A1 (en) * | 2003-06-11 | 2010-05-27 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20120013872A1 (en) * | 2003-06-11 | 2012-01-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8363208B2 (en) * | 2003-06-11 | 2013-01-29 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US9110389B2 (en) * | 2003-06-11 | 2015-08-18 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US9964858B2 (en) | 2003-06-11 | 2018-05-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US9036128B2 (en) | 2007-12-20 | 2015-05-19 | Asml Netherlands B.V. | Lithographic apparatus and in-line cleaning apparatus |
US9405205B2 (en) | 2007-12-20 | 2016-08-02 | Asml Netherlands B.V. | Lithographic apparatus and in-line cleaning apparatus |
US9785061B2 (en) | 2007-12-20 | 2017-10-10 | Asml Netherlands B.V. | Lithographic apparatus and in-line cleaning apparatus |
Also Published As
Publication number | Publication date |
---|---|
US7050146B2 (en) | 2006-05-23 |
TWI266948B (en) | 2006-11-21 |
EP1562080A1 (en) | 2005-08-10 |
JP2009088552A (en) | 2009-04-23 |
JP4834055B2 (en) | 2011-12-07 |
CN100504610C (en) | 2009-06-24 |
EP1562080B1 (en) | 2007-08-29 |
DE602005002155D1 (en) | 2007-10-11 |
KR100665383B1 (en) | 2007-01-04 |
JP2011066452A (en) | 2011-03-31 |
SG114712A1 (en) | 2005-09-28 |
CN1683999A (en) | 2005-10-19 |
US20050174549A1 (en) | 2005-08-11 |
KR20060041834A (en) | 2006-05-12 |
JP2005223342A (en) | 2005-08-18 |
DE602005002155T2 (en) | 2008-10-30 |
TW200538858A (en) | 2005-12-01 |
JP4444135B2 (en) | 2010-03-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
USRE42849E1 (en) | Lithographic apparatus and device manufacturing method | |
US20190212662A1 (en) | Lithographic apparatus and device manufacturing method | |
US8233135B2 (en) | Lithographic apparatus and device manufacturing method | |
US7326522B2 (en) | Device manufacturing method and a substrate | |
US7532304B2 (en) | Lithographic apparatus and device manufacturing method | |
US7812924B2 (en) | Lithographic apparatus and device manufacturing method | |
US7839483B2 (en) | Lithographic apparatus, device manufacturing method and a control system | |
US7145630B2 (en) | Lithographic apparatus and device manufacturing method |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
FEPP | Fee payment procedure |
Free format text: PAYOR NUMBER ASSIGNED (ORIGINAL EVENT CODE: ASPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY |
|
AS | Assignment |
Owner name: ASML NETHERLANDS B.V., NETHERLANDS Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:KONINKLIJKE PHILIPS ELECTRONICS N.V.;REEL/FRAME:025927/0721 Effective date: 20101014 |
|
CC | Certificate of correction | ||
REMI | Maintenance fee reminder mailed | ||
LAPS | Lapse for failure to pay maintenance fees |