USRE42636E1 - Window for gallium nitride light emitting diode - Google Patents
Window for gallium nitride light emitting diode Download PDFInfo
- Publication number
- USRE42636E1 USRE42636E1 US12/662,196 US66219610A USRE42636E US RE42636 E1 USRE42636 E1 US RE42636E1 US 66219610 A US66219610 A US 66219610A US RE42636 E USRE42636 E US RE42636E
- Authority
- US
- United States
- Prior art keywords
- layer
- window
- current spreading
- light emitting
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
Definitions
- the present invention relates to an improved window for a gallium nitride (GaN)-based light-emitting diode (LED).
- GaN gallium nitride
- LED light-emitting diode
- a semiconductor light-emitting diode includes a substrate, a light emitting region, a window structure, and a pair of electrodes for powering the diode.
- the substrate may be opaque or transparent.
- Light-emitting diodes which are based on gallium nitride (GaN) compounds generally include a transparent, insulating substrate, i.e., a sapphire substrate. With a transparent substrate, light may be utilized from either the substrate or from the opposite end of the LED which is termed the “window”.
- the amount of light generated by an LED is dependent on the distribution of the energizing current across the face of the light emitting region. It is well known in semiconductor technology that the current flowing between the electrodes tends to concentrate in a favored path directly under the electrode. This current flow tends to activate corresponding favored portions of the light-emitting region to the exclusion of portions which fall outside the favored path. Further since such favored paths fall under the opaque electrode, the generated light reaching the electrode is lost.
- Prior art GaN LEDs have employed conductive current spreading layers formed of nickel/gold (Ni/Au), and have a gold (Au) window bond pad mounted on such layers. In such arrangements, the Ni/Au layer and/or the Au bond pad tend to peel during the wire bonding operation to the pad.
- the window structure which includes a very thin, semi-transparent nickel oxide/gold (NiO x /Au) contact layer formed on a p-doped nitride compound window layer; a semi-transparent amorphous conducting top window layer; and a p electrode structure formed of a titanium layer with a covering Au bond pad.
- the amorphous top layer may be formed of indium tin oxide (ITO), tin oxide (TO), or zinc oxide (ZnO). Layers of other amorphous, conductive, and semi-transparent oxide compounds also may be suitable for construction of the top window layer.
- the thin NiO x /Au layer provides an excellent ohmic connection to both the amorphous current spreading conducting layer and to the magnesium (Mg)-doped GaN window layer.
- the highly conductive amorphous layer efficiently spreads current flowing between the electrodes across the light-emitting region to improve the efficiency of the device.
- the titanium electrode passes through both the amorphous conducting layer and the underlying Ni/Au to: (a) form an ohmic contact with those layers; (b) contact the p-doped top widow layer and form a Schottky diode connection therewith; and (c) provide good adhesion between the titanium (Ti) and the magnesiusm (Mg)-doped window layer.
- the Schottky diode connection forces current from the electrode into the amorphous conducting layer and eliminates the tendency of the prior art structures to concentrate current in a path directly under the electrode.
- the FIGURE is a schematic depicting a cross-sectional view of an LED according to one embodiment consistent with the present invention.
- the Figure depicts an LED according to one embodiment consistent with the present invention, as a GaN-based device in which light exits through window 109 .
- the LED of the Figure includes a sapphire substrate 101 , buffer region 102 , GaN substitute substrate layer 103 , n cladding layer 104 , active region 106 , p cladding layer 107 , window layers 108 , 109 , n electrode 105 , and a window structure which includes window layers 108, 109, a thin NiO x /Au semi-transparent layer 110 , a semi-transparent amorphous conducting layer 111 , a titanium electrode 112 , and a bond pad 113 .
- Layers 101 through 104 , and layers 106 through 109 are grown in a Metal Organic Chemical Vapor Deposition (MOCVD) reactor.
- MOCVD Metal Organic Chemical Vapor Deposition
- the remaining components of the illustrative LED namely, layers NiO x /Au layer 110 , amorphous conducting layer 111 , n electrode 105 , p electrode 112 , and bond pad 113 , are formed by evaporation in an apparatus other than a MOCVD reactor. Such processes are well known in the semiconductor industry and are not described herein.
- the illustrative light-emitting structure of the Figure includes an n cladding layer 104 , active region 106 , and p cladding layer 107 .
- the n cladding layer 104 is formed of silicon-doped GaN.
- active region 106 is a silicon-doped n-type gallium indium nitridie/gallium nitride (GaInN/GaN) multi-quantum well (MQW) structure.
- GaInN/GaN gallium indium nitridie/gallium nitride
- MQW multi-quantum well
- the p cladding layer 107 is formed of Mg-doped aluminum gallium nitride (AlGaN).
- the first window layer 108 is formed of Mg-doped GaN.
- the window layer 108 has a nominal thickness of 300 nm.
- the second window layer 109 is similarly formed of Mg-doped GaN. However, window layer 109 is more highly doped to permit an ohmic contact between layer 109 and the very thin NiO x /Au layer 110 .
- the resulting product exhibits the expected desired physical and electrical characteristics.
- Layer 110 is a very thin, semi-transparent contact layer of NiO x /Au which is deposited over the entire exposed face of window layer 109 . Opening 114 is formed in layers 110 and 111 to permit the deposit of a titanium adhesion layer 112 to contact window layer 109 . Titanium forms a strong physical bond with layer 109 and thus tends to eliminate peeling during wire bonding. In addition to reaching through to layer 109 , titanium structure 112 is deposited through and on top of amorphous layer 111 . Titanium electrode 112 forms ohmic contacts with layers 110 and 111 , and forms a Schottky diode contact with window layer 109 . The Schottky diode connection to window layer 109 eliminates the current path directly under the electrode and forces current flowing between the electrodes into conducting layer 111 .
- the p electrode Au bond pad 113 is deposited on top of titanium layer 112 to form an ohmic contact.
- Ni/Au layer 111 110 and the Ti and Au contact structures are heated in an atmosphere of molecular nitrogen and air.
- the Ni is converted to a form of nickel oxide.
- the described heat treatment improves the quality of the contact structures.
Abstract
Description
-
- 1. The ambient gas of the reactor is switched from H2 to nitrogen (N2) immediately after completion of the LED structure;
- 2. The reactor temperature is ramped down from the growth temperature to about 900 degrees C. in about 2 minutes;
- 3. The flow of NH3 is terminated;
- 4. The reactor temperature is further ramped down to about 750 degrees C. in about 2 minutes;
- 5. A temperature of about 750 degrees C. is held for about 20 minutes;
- 6. The heater of the reactor is shut off and the reactor is allowed to complete cool-down naturally. Experience shows that cool-down to 120 degrees C. occurs in about 30 minutes after heater shut off.
Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/662,196 USRE42636E1 (en) | 2000-07-26 | 2010-04-05 | Window for gallium nitride light emitting diode |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/626,445 US6420736B1 (en) | 2000-07-26 | 2000-07-26 | Window for gallium nitride light emitting diode |
US12/662,196 USRE42636E1 (en) | 2000-07-26 | 2010-04-05 | Window for gallium nitride light emitting diode |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/626,445 Reissue US6420736B1 (en) | 2000-07-26 | 2000-07-26 | Window for gallium nitride light emitting diode |
Publications (1)
Publication Number | Publication Date |
---|---|
USRE42636E1 true USRE42636E1 (en) | 2011-08-23 |
Family
ID=24510400
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/626,445 Ceased US6420736B1 (en) | 2000-07-26 | 2000-07-26 | Window for gallium nitride light emitting diode |
US10/197,614 Expired - Lifetime US6642549B2 (en) | 2000-07-26 | 2002-07-15 | Method of forming a window for a gallium nitride light emitting diode |
US12/662,196 Expired - Lifetime USRE42636E1 (en) | 2000-07-26 | 2010-04-05 | Window for gallium nitride light emitting diode |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/626,445 Ceased US6420736B1 (en) | 2000-07-26 | 2000-07-26 | Window for gallium nitride light emitting diode |
US10/197,614 Expired - Lifetime US6642549B2 (en) | 2000-07-26 | 2002-07-15 | Method of forming a window for a gallium nitride light emitting diode |
Country Status (8)
Country | Link |
---|---|
US (3) | US6420736B1 (en) |
EP (1) | EP1320894B1 (en) |
AT (1) | ATE482473T1 (en) |
AU (1) | AU2001277152A1 (en) |
CA (1) | CA2412416C (en) |
DE (1) | DE60143120D1 (en) |
ES (1) | ES2350422T3 (en) |
WO (1) | WO2002009185A1 (en) |
Cited By (3)
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US10593854B1 (en) | 2006-12-11 | 2020-03-17 | The Regents Of The University Of California | Transparent light emitting device with light emitting diodes |
US11592166B2 (en) | 2020-05-12 | 2023-02-28 | Feit Electric Company, Inc. | Light emitting device having improved illumination and manufacturing flexibility |
US11876042B2 (en) | 2020-08-03 | 2024-01-16 | Feit Electric Company, Inc. | Omnidirectional flexible light emitting device |
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US7881359B2 (en) * | 1999-04-23 | 2011-02-01 | The Furukawa Electric Co., Ltd | Surface-emission semiconductor laser device |
JP2000307190A (en) * | 1999-04-23 | 2000-11-02 | Furukawa Electric Co Ltd:The | Manufacture of surface emitting semiconductor laser |
US7368316B2 (en) * | 1999-04-23 | 2008-05-06 | The Furukawa Electric Co., Ltd. | Surface-emission semiconductor laser device |
US6420736B1 (en) * | 2000-07-26 | 2002-07-16 | Axt, Inc. | Window for gallium nitride light emitting diode |
US6888171B2 (en) * | 2000-12-22 | 2005-05-03 | Dallan Luming Science & Technology Group Co., Ltd. | Light emitting diode |
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WO2003107443A2 (en) * | 2002-06-17 | 2003-12-24 | Kopin Corporation | Bonding pad for gallium nitride-based light-emitting device |
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DE10261676A1 (en) * | 2002-12-31 | 2004-07-22 | Osram Opto Semiconductors Gmbh | Light emitting diode chip comprises epitaxial semiconductor sequence having protective layer and electromagnetic radiation emitting active zone, used for high efficiency semiconductor light emitting diodes |
US7358539B2 (en) * | 2003-04-09 | 2008-04-15 | Lumination Llc | Flip-chip light emitting diode with indium-tin-oxide based reflecting contacts |
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US6835964B2 (en) * | 2003-05-28 | 2004-12-28 | Mu-Jen Lai | GaN-based composition semiconductor light-emitting element and its window layer structure |
WO2005029598A1 (en) * | 2003-09-22 | 2005-03-31 | Showa Denko K.K. | Gallium nitride-based compound semiconductor light-emitting device and electrode for the same |
US7417264B2 (en) * | 2003-12-22 | 2008-08-26 | Samsung Electronics Co., Ltd. | Top-emitting nitride-based light emitting device and method of manufacturing the same |
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US7341932B2 (en) * | 2005-09-30 | 2008-03-11 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Schottky barrier diode and method thereof |
WO2007081092A1 (en) * | 2006-01-09 | 2007-07-19 | Seoul Opto Device Co., Ltd. | Del à couche d'ito et son procédé de fabrication |
US8124957B2 (en) | 2006-02-22 | 2012-02-28 | Cree, Inc. | Low resistance tunnel junctions in wide band gap materials and method of making same |
US7737451B2 (en) * | 2006-02-23 | 2010-06-15 | Cree, Inc. | High efficiency LED with tunnel junction layer |
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KR101469979B1 (en) * | 2008-03-24 | 2014-12-05 | 엘지이노텍 주식회사 | group 3 nitride-based semiconductor light emitting diodes and methods to fabricate them |
DE102008035110A1 (en) * | 2008-07-28 | 2010-02-11 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor chip |
KR101018227B1 (en) | 2008-10-09 | 2011-02-28 | 삼성엘이디 주식회사 | Vertically structured nitridetype light emitting diode and method of the same |
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JP5350833B2 (en) * | 2009-02-20 | 2013-11-27 | 株式会社東芝 | Semiconductor light emitting device, semiconductor light emitting device, and method for manufacturing semiconductor light emitting device |
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Citations (11)
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US5344791A (en) | 1991-07-05 | 1994-09-06 | Hewlett-Packard Company | Diffusion control of p-n junction location in multilayer heterostructure light emitting devices |
EP0622858A2 (en) | 1993-04-28 | 1994-11-02 | Nichia Chemical Industries, Ltd. | Gallium nitride-based III-V group compound semiconductor device and method of producing the same |
US5481122A (en) | 1994-07-25 | 1996-01-02 | Industrial Technology Research Institute | Surface light emitting diode with electrically conductive window layer |
JPH1012921A (en) | 1996-06-21 | 1998-01-16 | Rohm Co Ltd | Light-emitting semiconductor element |
US5789768A (en) | 1997-06-23 | 1998-08-04 | Epistar Corporation | Light emitting diode having transparent conductive oxide formed on the contact layer |
US6078064A (en) | 1998-05-04 | 2000-06-20 | Epistar Co. | Indium gallium nitride light emitting diode |
US6169298B1 (en) | 1998-08-10 | 2001-01-02 | Kingmax Technology Inc. | Semiconductor light emitting device with conductive window layer |
US6207972B1 (en) | 1999-01-12 | 2001-03-27 | Super Epitaxial Products, Inc. | Light emitting diode with transparent window layer |
US6225648B1 (en) | 1999-07-09 | 2001-05-01 | Epistar Corporation | High-brightness light emitting diode |
US6287947B1 (en) | 1999-06-08 | 2001-09-11 | Lumileds Lighting, U.S. Llc | Method of forming transparent contacts to a p-type GaN layer |
US6420732B1 (en) | 2000-06-26 | 2002-07-16 | Luxnet Corporation | Light emitting diode of improved current blocking and light extraction structure |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6420736B1 (en) * | 2000-07-26 | 2002-07-16 | Axt, Inc. | Window for gallium nitride light emitting diode |
-
2000
- 2000-07-26 US US09/626,445 patent/US6420736B1/en not_active Ceased
-
2001
- 2001-07-25 CA CA002412416A patent/CA2412416C/en not_active Expired - Lifetime
- 2001-07-25 AU AU2001277152A patent/AU2001277152A1/en not_active Abandoned
- 2001-07-25 DE DE60143120T patent/DE60143120D1/en not_active Expired - Lifetime
- 2001-07-25 ES ES01954938T patent/ES2350422T3/en not_active Expired - Lifetime
- 2001-07-25 AT AT01954938T patent/ATE482473T1/en active
- 2001-07-25 EP EP01954938A patent/EP1320894B1/en not_active Expired - Lifetime
- 2001-07-25 WO PCT/US2001/023346 patent/WO2002009185A1/en active Application Filing
-
2002
- 2002-07-15 US US10/197,614 patent/US6642549B2/en not_active Expired - Lifetime
-
2010
- 2010-04-05 US US12/662,196 patent/USRE42636E1/en not_active Expired - Lifetime
Patent Citations (12)
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US5344791A (en) | 1991-07-05 | 1994-09-06 | Hewlett-Packard Company | Diffusion control of p-n junction location in multilayer heterostructure light emitting devices |
EP0622858A2 (en) | 1993-04-28 | 1994-11-02 | Nichia Chemical Industries, Ltd. | Gallium nitride-based III-V group compound semiconductor device and method of producing the same |
US6204512B1 (en) | 1993-04-28 | 2001-03-20 | Nichia Chemical Industries, Ltd. | Gallium nitride-based III-V group compound semiconductor device and method of producing the same |
US5481122A (en) | 1994-07-25 | 1996-01-02 | Industrial Technology Research Institute | Surface light emitting diode with electrically conductive window layer |
JPH1012921A (en) | 1996-06-21 | 1998-01-16 | Rohm Co Ltd | Light-emitting semiconductor element |
US5789768A (en) | 1997-06-23 | 1998-08-04 | Epistar Corporation | Light emitting diode having transparent conductive oxide formed on the contact layer |
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US6207972B1 (en) | 1999-01-12 | 2001-03-27 | Super Epitaxial Products, Inc. | Light emitting diode with transparent window layer |
US6287947B1 (en) | 1999-06-08 | 2001-09-11 | Lumileds Lighting, U.S. Llc | Method of forming transparent contacts to a p-type GaN layer |
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10593854B1 (en) | 2006-12-11 | 2020-03-17 | The Regents Of The University Of California | Transparent light emitting device with light emitting diodes |
US10644213B1 (en) | 2006-12-11 | 2020-05-05 | The Regents Of The University Of California | Filament LED light bulb |
US10658557B1 (en) | 2006-12-11 | 2020-05-19 | The Regents Of The University Of California | Transparent light emitting device with light emitting diodes |
US11592166B2 (en) | 2020-05-12 | 2023-02-28 | Feit Electric Company, Inc. | Light emitting device having improved illumination and manufacturing flexibility |
US11796163B2 (en) | 2020-05-12 | 2023-10-24 | Feit Electric Company, Inc. | Light emitting device having improved illumination and manufacturing flexibility |
US11876042B2 (en) | 2020-08-03 | 2024-01-16 | Feit Electric Company, Inc. | Omnidirectional flexible light emitting device |
Also Published As
Publication number | Publication date |
---|---|
CA2412416A1 (en) | 2002-01-31 |
WO2002009185A1 (en) | 2002-01-31 |
ATE482473T1 (en) | 2010-10-15 |
US20030010994A1 (en) | 2003-01-16 |
EP1320894A1 (en) | 2003-06-25 |
US6420736B1 (en) | 2002-07-16 |
CA2412416C (en) | 2006-07-04 |
US6642549B2 (en) | 2003-11-04 |
AU2001277152A1 (en) | 2002-02-05 |
ES2350422T3 (en) | 2011-01-21 |
EP1320894A4 (en) | 2007-02-14 |
DE60143120D1 (en) | 2010-11-04 |
EP1320894B1 (en) | 2010-09-22 |
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Legal Events
Date | Code | Title | Description |
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AS | Assignment |
Owner name: AMERICAN XTAL TECHNOLOGY, INC., CALIFORNIA Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:CHEN, JOHN;LIANG, BINGWEN;SHIH, ROBERT;REEL/FRAME:025329/0013 Effective date: 20000724 |
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Owner name: AXT, INC., CALIFORNIA Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:AMERICAN XTAL TECHNOLOGY, INC.;REEL/FRAME:025761/0927 Effective date: 20011031 |
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Owner name: LUMEI OPTOELECTRONICS CORP., CALIFORNIA Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:AXT, INC.;REEL/FRAME:025842/0118 Effective date: 20030927 |
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