USRE42310E1 - Dual-addressed rectifier storage device - Google Patents
Dual-addressed rectifier storage device Download PDFInfo
- Publication number
- USRE42310E1 USRE42310E1 US11/780,220 US78022007A USRE42310E US RE42310 E1 USRE42310 E1 US RE42310E1 US 78022007 A US78022007 A US 78022007A US RE42310 E USRE42310 E US RE42310E
- Authority
- US
- United States
- Prior art keywords
- conductive means
- storage
- generally parallel
- biased
- lines
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
- G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F17/00—Digital computing or data processing equipment or methods, specially adapted for specific functions
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/06—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using diode elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/04—Arrangements for selecting an address in a digital store using a sequential addressing device, e.g. shift register, counter
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/102—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components
- H01L27/1021—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components including diodes only
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Theoretical Computer Science (AREA)
- Databases & Information Systems (AREA)
- General Engineering & Computer Science (AREA)
- Software Systems (AREA)
- Mathematical Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Data Mining & Analysis (AREA)
- Computer Hardware Design (AREA)
- Read Only Memory (AREA)
Abstract
Description
Claims (52)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/780,220 USRE42310E1 (en) | 1996-03-05 | 2007-07-19 | Dual-addressed rectifier storage device |
AU2007203411A AU2007203411A1 (en) | 2007-07-19 | 2007-07-23 | Pneumatic base for facilitating the installation and tensioning of a drive belt |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/610,992 US5673218A (en) | 1996-03-05 | 1996-03-05 | Dual-addressed rectifier storage device |
US08/863,156 US5889694A (en) | 1996-03-05 | 1997-05-27 | Dual-addressed rectifier storage device |
US09/821,182 USRE41733E1 (en) | 1996-03-05 | 2001-03-29 | Dual-addressed rectifier storage device |
US11/780,220 USRE42310E1 (en) | 1996-03-05 | 2007-07-19 | Dual-addressed rectifier storage device |
Related Parent Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US08/863,156 Reissue US5889694A (en) | 1996-03-05 | 1997-05-27 | Dual-addressed rectifier storage device |
US09/821,182 Continuation USRE41733E1 (en) | 1996-03-05 | 2001-03-29 | Dual-addressed rectifier storage device |
Publications (2)
Publication Number | Publication Date |
---|---|
US20080013398A1 US20080013398A1 (en) | 2008-01-17 |
USRE42310E1 true USRE42310E1 (en) | 2011-04-26 |
Family
ID=24447205
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US08/610,992 Expired - Lifetime US5673218A (en) | 1996-03-05 | 1996-03-05 | Dual-addressed rectifier storage device |
US09/821,182 Expired - Lifetime USRE41733E1 (en) | 1996-03-05 | 2001-03-29 | Dual-addressed rectifier storage device |
US11/780,220 Expired - Lifetime USRE42310E1 (en) | 1996-03-05 | 2007-07-19 | Dual-addressed rectifier storage device |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US08/610,992 Expired - Lifetime US5673218A (en) | 1996-03-05 | 1996-03-05 | Dual-addressed rectifier storage device |
US09/821,182 Expired - Lifetime USRE41733E1 (en) | 1996-03-05 | 2001-03-29 | Dual-addressed rectifier storage device |
Country Status (1)
Country | Link |
---|---|
US (3) | US5673218A (en) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5673218A (en) * | 1996-03-05 | 1997-09-30 | Shepard; Daniel R. | Dual-addressed rectifier storage device |
US6956757B2 (en) | 2000-06-22 | 2005-10-18 | Contour Semiconductor, Inc. | Low cost high density rectifier matrix memory |
US6559667B1 (en) * | 2000-06-28 | 2003-05-06 | Advanced Micro Devices, Inc. | Programming thermal test chip arrays |
WO2002027768A2 (en) * | 2000-09-27 | 2002-04-04 | Nüp2 Incorporated | Fabrication of semiconductor devices |
US7376008B2 (en) * | 2003-08-07 | 2008-05-20 | Contour Seminconductor, Inc. | SCR matrix storage device |
US7667996B2 (en) * | 2006-02-15 | 2010-02-23 | Contour Semiconductor, Inc. | Nano-vacuum-tubes and their application in storage devices |
US7593256B2 (en) * | 2006-03-28 | 2009-09-22 | Contour Semiconductor, Inc. | Memory array with readout isolation |
US7624517B2 (en) | 2006-05-18 | 2009-12-01 | Nike, Inc. | Article of footwear with saddle |
US7813157B2 (en) * | 2007-10-29 | 2010-10-12 | Contour Semiconductor, Inc. | Non-linear conductor memory |
US7933133B2 (en) * | 2007-11-05 | 2011-04-26 | Contour Semiconductor, Inc. | Low cost, high-density rectifier matrix memory |
US20090225621A1 (en) * | 2008-03-05 | 2009-09-10 | Shepard Daniel R | Split decoder storage array and methods of forming the same |
WO2009149061A2 (en) * | 2008-06-02 | 2009-12-10 | Contour Semiconductor, Inc. | Diode decoder array with non-sequential layout and methods of forming the same |
US8325556B2 (en) * | 2008-10-07 | 2012-12-04 | Contour Semiconductor, Inc. | Sequencing decoder circuit |
Citations (124)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2709042A (en) | 1949-06-21 | 1955-05-24 | Ile D Etudes De Calcul Automat | Registering device for electronic calculating machines |
US3091754A (en) | 1958-05-08 | 1963-05-28 | Nazare Edgar Henri | Electric memory device |
US3245051A (en) | 1960-11-16 | 1966-04-05 | John H Robb | Information storage matrices |
US3308433A (en) | 1963-01-10 | 1967-03-07 | Rca Corp | Switching matrix |
US3373406A (en) | 1963-12-04 | 1968-03-12 | Scam Instr Corp | Logic circuit board matrix having diode and resistor crosspoints |
US3576549A (en) | 1969-04-14 | 1971-04-27 | Cogar Corp | Semiconductor device, method, and memory array |
US3626389A (en) | 1969-10-08 | 1971-12-07 | Bell Telephone Labor Inc | Cross-point matrix memory using stored charge |
US3701119A (en) | 1971-12-30 | 1972-10-24 | Bell Telephone Labor Inc | Control circuitry and voltage source for use with charge storage diode |
US3721964A (en) | 1970-02-18 | 1973-03-20 | Hewlett Packard Co | Integrated circuit read only memory bit organized in coincident select structure |
US3806896A (en) | 1972-11-15 | 1974-04-23 | Bell Telephone Labor Inc | Reduced access terminal memory system |
US3838405A (en) | 1973-10-03 | 1974-09-24 | Ibm | Non-volatile diode cross point memory array |
US3942071A (en) | 1973-11-03 | 1976-03-02 | Ferranti, Limited | Gas-discharge display device driving circuits |
US4010453A (en) | 1975-12-03 | 1977-03-01 | International Business Machines Corporation | Stored charge differential sense amplifier |
US4070654A (en) | 1975-09-26 | 1978-01-24 | Hitachi, Ltd. | Bipolar read-only memory |
US4090190A (en) | 1971-05-20 | 1978-05-16 | Rostkovsky Vladimir S | Read only memory |
US4240151A (en) | 1975-02-10 | 1980-12-16 | Hitachi, Ltd. | Semiconductor read only memory |
US4308595A (en) | 1979-12-19 | 1981-12-29 | International Business Machines Corporation | Array driver |
US4312046A (en) | 1979-10-04 | 1982-01-19 | Harris Corporation | Vertical fuse and method of fabrication |
US4322822A (en) | 1979-01-02 | 1982-03-30 | Mcpherson Roger K | High density VMOS electrically programmable ROM |
US4342102A (en) | 1980-06-18 | 1982-07-27 | Signetics Corporation | Semiconductor memory array |
US4347585A (en) | 1980-06-09 | 1982-08-31 | International Business Machines Corporation | Reproduce only storage matrix |
JPS57203294A (en) | 1981-06-10 | 1982-12-13 | Nec Corp | Semiconductor integrated circuit |
JPS57203293U (en) | 1981-06-22 | 1982-12-24 | ||
US4385368A (en) | 1980-11-24 | 1983-05-24 | Raytheon Company | Programmable read only memory |
US4394752A (en) | 1980-09-26 | 1983-07-19 | International Business Machines Corporation | Decoding and selection circuit for a monolithic memory |
US4404480A (en) | 1982-02-01 | 1983-09-13 | Sperry Corporation | High speed-low power gallium arsenide basic logic circuit |
US4419741A (en) | 1980-01-28 | 1983-12-06 | Rca Corporation | Read only memory (ROM) having high density memory array with on pitch decoder circuitry |
US4442507A (en) | 1981-02-23 | 1984-04-10 | Burroughs Corporation | Electrically programmable read-only memory stacked above a semiconductor substrate |
US4479200A (en) | 1981-12-29 | 1984-10-23 | Fujitsu Limited | Semiconductor memory device |
US4525921A (en) | 1981-07-13 | 1985-07-02 | Irvine Sensors Corporation | High-density electronic processing package-structure and fabrication |
US4534008A (en) | 1982-04-27 | 1985-08-06 | Siemens Aktiengesellschaft | Programmable logic array |
US4554640A (en) | 1984-01-30 | 1985-11-19 | Monolithic Memories, Inc. | Programmable array logic circuit with shared product terms |
US4561070A (en) | 1983-07-01 | 1985-12-24 | Raytheon Company | Integrated circuit memory |
US4608672A (en) | 1983-07-14 | 1986-08-26 | Honeywell Inc. | Semiconductor memory |
US4646266A (en) | 1984-09-28 | 1987-02-24 | Energy Conversion Devices, Inc. | Programmable semiconductor structures and methods for using the same |
US4646128A (en) | 1980-09-16 | 1987-02-24 | Irvine Sensors Corporation | High-density electronic processing package--structure and fabrication |
US4661927A (en) | 1985-01-15 | 1987-04-28 | Honeywell Inc. | Integrated Schottky logic read only memory |
US4710900A (en) | 1984-12-28 | 1987-12-01 | Nec Corporation | Non-volatile semiconductor memory device having an improved write circuit |
US4721885A (en) | 1987-02-11 | 1988-01-26 | Sri International | Very high speed integrated microelectronic tubes |
US4757475A (en) | 1985-05-20 | 1988-07-12 | Fujitsu Limited | Semiconductor memory device having diode matrix type decoder and redundancy configuration |
US4772886A (en) | 1985-11-15 | 1988-09-20 | Alps Electric Co., Ltd. | Matrix driver |
US4782340A (en) | 1986-08-22 | 1988-11-01 | Energy Conversion Devices, Inc. | Electronic arrays having thin film line drivers |
US4800529A (en) | 1986-03-17 | 1989-01-24 | Fujitsu Limited | Semiconductive memory device with current control and comparison means to reduce power consumption and increase operating speed |
US4845679A (en) | 1987-03-30 | 1989-07-04 | Honeywell Inc. | Diode-FET logic circuitry |
US4884238A (en) | 1988-03-09 | 1989-11-28 | Honeywell Inc. | Read-only memory |
JPH0298898A (en) | 1988-10-05 | 1990-04-11 | Mitsubishi Electric Corp | Diode read-only memory |
US4920516A (en) | 1987-05-12 | 1990-04-24 | Fujitsu Limited | Read only memory circuit having a precharged selected bit line |
US5051865A (en) | 1985-06-17 | 1991-09-24 | Fujitsu Limited | Multi-layer semiconductor device |
US5163328A (en) | 1990-08-06 | 1992-11-17 | Colin Electronics Co., Ltd. | Miniature pressure sensor and pressure sensor arrays |
US5203731A (en) | 1990-07-18 | 1993-04-20 | International Business Machines Corporation | Process and structure of an integrated vacuum microelectronic device |
US5296716A (en) | 1991-01-18 | 1994-03-22 | Energy Conversion Devices, Inc. | Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom |
US5357471A (en) | 1992-03-20 | 1994-10-18 | National Semiconductor Corporation | Fault locator architecture and method for memories |
US5390145A (en) * | 1993-04-15 | 1995-02-14 | Fujitsu Limited | Resonance tunnel diode memory |
US5432729A (en) | 1993-04-23 | 1995-07-11 | Irvine Sensors Corporation | Electronic module comprising a stack of IC chips each interacting with an IC chip secured to the stack |
US5441907A (en) | 1994-06-27 | 1995-08-15 | Taiwan Semiconductor Manufacturing Company | Process for manufacturing a plug-diode mask ROM |
US5463583A (en) | 1989-06-30 | 1995-10-31 | Fujitsu Limited | Non-volatile semiconductor memory device |
US5463269A (en) | 1990-07-18 | 1995-10-31 | International Business Machines Corporation | Process and structure of an integrated vacuum microelectronic device |
US5493533A (en) * | 1994-09-28 | 1996-02-20 | Atmel Corporation | Dual differential trans-impedance sense amplifier and method |
US5576986A (en) | 1993-10-14 | 1996-11-19 | Fuji Electric Co. Ltd. | Memory device using micro vacuum tube |
US5640343A (en) | 1996-03-18 | 1997-06-17 | International Business Machines Corporation | Magnetic memory array using magnetic tunnel junction devices in the memory cells |
US5668032A (en) | 1995-07-31 | 1997-09-16 | Holmberg; Scott H. | Active matrix ESD protection and testing scheme |
US5673218A (en) | 1996-03-05 | 1997-09-30 | Shepard; Daniel R. | Dual-addressed rectifier storage device |
US5675531A (en) | 1995-04-05 | 1997-10-07 | International Business Machines Corporation | Device for information storage using field emission |
US5709589A (en) | 1996-03-29 | 1998-01-20 | Boone; Charles Daniel | Hardwood floor finishing process |
US5719589A (en) | 1996-01-11 | 1998-02-17 | Motorola, Inc. | Organic light emitting diode array drive apparatus |
US5835396A (en) | 1996-10-17 | 1998-11-10 | Zhang; Guobiao | Three-dimensional read-only memory |
US5837564A (en) | 1995-11-01 | 1998-11-17 | Micron Technology, Inc. | Method for optimal crystallization to obtain high electrical performance from chalcogenides |
US5840608A (en) | 1996-11-22 | 1998-11-24 | United Microelectronics Corporation | High density ROM and a method of making the same |
US5889694A (en) | 1996-03-05 | 1999-03-30 | Shepard; Daniel R. | Dual-addressed rectifier storage device |
WO1999039394A1 (en) | 1998-02-02 | 1999-08-05 | Uniax Corporation | X-y addressable electric microswitch arrays and sensor matrices employing them |
US6055180A (en) | 1997-06-17 | 2000-04-25 | Thin Film Electronics Asa | Electrically addressable passive device, method for electrical addressing of the same and uses of the device and the method |
US6075723A (en) | 1997-12-15 | 2000-06-13 | Sony Corporation | Nonvolatile semiconductor memory device and IC memory card using same |
US6117720A (en) | 1995-06-07 | 2000-09-12 | Micron Technology, Inc. | Method of making an integrated circuit electrode having a reduced contact area |
US6163475A (en) | 1999-02-13 | 2000-12-19 | Proebsting; Robert J. | Bit line cross-over layout arrangement |
US6185122B1 (en) | 1998-11-16 | 2001-02-06 | Matrix Semiconductor, Inc. | Vertically stacked field programmable nonvolatile memory and method of fabrication |
US6198682B1 (en) | 1999-02-13 | 2001-03-06 | Integrated Device Technology, Inc. | Hierarchical dynamic memory array architecture using read amplifiers separate from bit line sense amplifiers |
US6236587B1 (en) | 1997-09-01 | 2001-05-22 | Thin Film Electronics Asa | Read-only memory and read-only memory devices |
US6256767B1 (en) | 1999-03-29 | 2001-07-03 | Hewlett-Packard Company | Demultiplexer for a molecular wire crossbar network (MWCN DEMUX) |
US6259132B1 (en) | 1997-07-08 | 2001-07-10 | Stmicroelectronics S.R.L. | Array of electrically programmable non-volatile semiconductor memory cells comprising ROM memory cells |
US6351023B1 (en) | 1998-02-18 | 2002-02-26 | International Business Machines Corporation | Semiconductor device having ultra-sharp P-N junction and method of manufacturing the same |
US6385075B1 (en) | 2001-06-05 | 2002-05-07 | Hewlett-Packard Company | Parallel access of cross-point diode memory arrays |
US20020126526A1 (en) | 2001-03-07 | 2002-09-12 | Taussig Carl P. | Apparatus and methods for marking content of memory storage devices |
DE10111454A1 (en) | 2001-03-09 | 2002-09-26 | Infineon Technologies Ag | Memory arrangement for computer has memory cell field, decoder circuit with word, bit line decoders, read output for reading from individual cells by selecting corresponding word, bit lines |
US6459095B1 (en) | 1999-03-29 | 2002-10-01 | Hewlett-Packard Company | Chemically synthesized and assembled electronics devices |
US6462998B1 (en) | 1999-02-13 | 2002-10-08 | Integrated Device Technology, Inc. | Programmable and electrically configurable latch timing circuit |
US6478231B1 (en) | 2001-06-29 | 2002-11-12 | Hewlett Packard Company | Methods for reducing the number of interconnects to the PIRM memory module |
US20020184459A1 (en) | 2001-06-05 | 2002-12-05 | Carl Taussig | Digital camera memory system |
US20020191434A1 (en) | 2001-06-05 | 2002-12-19 | Carl Taussing | Addressing and sensing a cross-point diode memory array |
US20020192895A1 (en) | 2001-06-05 | 2002-12-19 | Carl Taussig | Fabrication techniques for addressing cross-point diode memory arrays |
US20020196659A1 (en) | 2001-06-05 | 2002-12-26 | Hurst Terril N. | Non-Volatile memory |
US20030003633A1 (en) | 2001-06-29 | 2003-01-02 | Ping Mei | Apparatus and fabrication process to reduce crosstalk in pirm memory array |
US20030028699A1 (en) | 2001-08-02 | 2003-02-06 | Michael Holtzman | Removable computer with mass storage |
US20030026120A1 (en) | 2001-03-21 | 2003-02-06 | Scheuerlein Roy E. | Current sensing method and apparatus particularly useful for a memory array of cells having diode-like characteristics |
US6559468B1 (en) | 1999-03-29 | 2003-05-06 | Hewlett-Packard Development Company Lp | Molecular wire transistor (MWT) |
US6586327B2 (en) | 2000-09-27 | 2003-07-01 | Nup2 Incorporated | Fabrication of semiconductor devices |
US6587394B2 (en) | 2001-07-24 | 2003-07-01 | Hewlett-Packard Development Company, L.P. | Programmable address logic for solid state diode-based memory |
US6598164B1 (en) | 1998-04-13 | 2003-07-22 | Nüp2 Incorporated | Device and method for reducing piracy of digitized information |
US6613650B1 (en) | 1995-07-31 | 2003-09-02 | Hyundai Electronics America | Active matrix ESD protection and testing scheme |
US6721223B2 (en) | 2001-06-15 | 2004-04-13 | Renesas Technology Corp. | Semiconductor memory device |
US6744681B2 (en) | 2001-07-24 | 2004-06-01 | Hewlett-Packard Development Company, L.P. | Fault-tolerant solid state memory |
US20040145938A1 (en) | 2002-07-12 | 2004-07-29 | Jeno Tihanyi | Non-volatile memory cell |
US20040160805A1 (en) | 2002-08-02 | 2004-08-19 | Unity Semiconductor Corporation | Multi-output multiplexor |
US6839260B2 (en) | 2000-01-18 | 2005-01-04 | Hitachi, Ltd. | Semiconductor device having different types of memory cell arrays stacked in a vertical direction |
US20050067675A1 (en) | 2003-08-19 | 2005-03-31 | Shepard Daniel Robert | Molded substrate for topograpy based lithography |
US20050127350A1 (en) | 2003-12-10 | 2005-06-16 | Furkay Stephen S. | Field emission phase change diode memory |
US6956757B2 (en) | 2000-06-22 | 2005-10-18 | Contour Semiconductor, Inc. | Low cost high density rectifier matrix memory |
US20060072427A1 (en) | 2003-06-11 | 2006-04-06 | Yoshihiro Kanda | Information storage |
US7054219B1 (en) | 2005-03-31 | 2006-05-30 | Matrix Semiconductor, Inc. | Transistor layout configuration for tight-pitched memory array lines |
US7088613B2 (en) | 2004-05-14 | 2006-08-08 | Macronix International Co., Ltd. | Method for controlling current during read and program operations of programmable diode |
US7149934B2 (en) | 2002-04-11 | 2006-12-12 | Contour Semiconductor, Inc. | Error correcting memory access means and method |
US7190602B2 (en) | 1998-11-16 | 2007-03-13 | Sandisk 3D Llc | Integrated circuit incorporating three-dimensional memory array with dual opposing decoder arrangement |
US20070242494A1 (en) | 2006-03-28 | 2007-10-18 | Eric Nestler | Memory array with readout isolation |
US20070247890A1 (en) | 2006-02-15 | 2007-10-25 | Shepard Daniel R | Nano-vacuum-tubes and their application in storage devices |
US7330369B2 (en) | 2004-04-06 | 2008-02-12 | Bao Tran | NANO-electronic memory array |
US7376008B2 (en) | 2003-08-07 | 2008-05-20 | Contour Seminconductor, Inc. | SCR matrix storage device |
US7408798B2 (en) | 2006-03-31 | 2008-08-05 | International Business Machines Corporation | 3-dimensional integrated circuit architecture, structure and method for fabrication thereof |
US7471547B2 (en) | 2004-12-07 | 2008-12-30 | Infineon Technologies Ag | Memory cell array |
US20090109726A1 (en) | 2007-10-29 | 2009-04-30 | Shepard Daniel R | Non-linear conductor memory |
US20090141535A1 (en) | 2005-07-01 | 2009-06-04 | Sandisk 3D Llc | Methods involving memory with high dielectric constant antifuses adapted for use at low voltage |
US20090161420A1 (en) | 2007-12-19 | 2009-06-25 | Shepard Daniel R | Field-emitter-based memory array with phase-change storage devices |
US7554873B2 (en) | 2005-03-21 | 2009-06-30 | Macronix International Co., Ltd. | Three-dimensional memory devices and methods of manufacturing and operating the same |
US20090225621A1 (en) | 2008-03-05 | 2009-09-10 | Shepard Daniel R | Split decoder storage array and methods of forming the same |
US20090225579A1 (en) | 2007-11-05 | 2009-09-10 | Shepard Daniel R | Low cost, high-density rectifier matrix memory |
US20090296445A1 (en) | 2008-06-02 | 2009-12-03 | Shepard Daniel R | Diode decoder array with non-sequential layout and methods of forming the same |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57203293A (en) * | 1981-06-10 | 1982-12-13 | Nec Corp | Semiconductor integrated circuit |
-
1996
- 1996-03-05 US US08/610,992 patent/US5673218A/en not_active Expired - Lifetime
-
2001
- 2001-03-29 US US09/821,182 patent/USRE41733E1/en not_active Expired - Lifetime
-
2007
- 2007-07-19 US US11/780,220 patent/USRE42310E1/en not_active Expired - Lifetime
Patent Citations (137)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2709042A (en) | 1949-06-21 | 1955-05-24 | Ile D Etudes De Calcul Automat | Registering device for electronic calculating machines |
US3091754A (en) | 1958-05-08 | 1963-05-28 | Nazare Edgar Henri | Electric memory device |
US3245051A (en) | 1960-11-16 | 1966-04-05 | John H Robb | Information storage matrices |
US3308433A (en) | 1963-01-10 | 1967-03-07 | Rca Corp | Switching matrix |
US3373406A (en) | 1963-12-04 | 1968-03-12 | Scam Instr Corp | Logic circuit board matrix having diode and resistor crosspoints |
US3576549A (en) | 1969-04-14 | 1971-04-27 | Cogar Corp | Semiconductor device, method, and memory array |
US3626389A (en) | 1969-10-08 | 1971-12-07 | Bell Telephone Labor Inc | Cross-point matrix memory using stored charge |
US3721964A (en) | 1970-02-18 | 1973-03-20 | Hewlett Packard Co | Integrated circuit read only memory bit organized in coincident select structure |
US4090190A (en) | 1971-05-20 | 1978-05-16 | Rostkovsky Vladimir S | Read only memory |
US3701119A (en) | 1971-12-30 | 1972-10-24 | Bell Telephone Labor Inc | Control circuitry and voltage source for use with charge storage diode |
US3806896A (en) | 1972-11-15 | 1974-04-23 | Bell Telephone Labor Inc | Reduced access terminal memory system |
US3838405A (en) | 1973-10-03 | 1974-09-24 | Ibm | Non-volatile diode cross point memory array |
US3942071A (en) | 1973-11-03 | 1976-03-02 | Ferranti, Limited | Gas-discharge display device driving circuits |
US4240151A (en) | 1975-02-10 | 1980-12-16 | Hitachi, Ltd. | Semiconductor read only memory |
US4070654A (en) | 1975-09-26 | 1978-01-24 | Hitachi, Ltd. | Bipolar read-only memory |
US4010453A (en) | 1975-12-03 | 1977-03-01 | International Business Machines Corporation | Stored charge differential sense amplifier |
US4322822A (en) | 1979-01-02 | 1982-03-30 | Mcpherson Roger K | High density VMOS electrically programmable ROM |
US4312046A (en) | 1979-10-04 | 1982-01-19 | Harris Corporation | Vertical fuse and method of fabrication |
US4308595A (en) | 1979-12-19 | 1981-12-29 | International Business Machines Corporation | Array driver |
US4419741A (en) | 1980-01-28 | 1983-12-06 | Rca Corporation | Read only memory (ROM) having high density memory array with on pitch decoder circuitry |
US4347585A (en) | 1980-06-09 | 1982-08-31 | International Business Machines Corporation | Reproduce only storage matrix |
US4342102A (en) | 1980-06-18 | 1982-07-27 | Signetics Corporation | Semiconductor memory array |
US4646128A (en) | 1980-09-16 | 1987-02-24 | Irvine Sensors Corporation | High-density electronic processing package--structure and fabrication |
US4394752A (en) | 1980-09-26 | 1983-07-19 | International Business Machines Corporation | Decoding and selection circuit for a monolithic memory |
US4385368A (en) | 1980-11-24 | 1983-05-24 | Raytheon Company | Programmable read only memory |
US4442507A (en) | 1981-02-23 | 1984-04-10 | Burroughs Corporation | Electrically programmable read-only memory stacked above a semiconductor substrate |
JPS57203294A (en) | 1981-06-10 | 1982-12-13 | Nec Corp | Semiconductor integrated circuit |
JPS57203293U (en) | 1981-06-22 | 1982-12-24 | ||
US4525921A (en) | 1981-07-13 | 1985-07-02 | Irvine Sensors Corporation | High-density electronic processing package-structure and fabrication |
US4479200A (en) | 1981-12-29 | 1984-10-23 | Fujitsu Limited | Semiconductor memory device |
US4404480A (en) | 1982-02-01 | 1983-09-13 | Sperry Corporation | High speed-low power gallium arsenide basic logic circuit |
US4534008A (en) | 1982-04-27 | 1985-08-06 | Siemens Aktiengesellschaft | Programmable logic array |
US4561070A (en) | 1983-07-01 | 1985-12-24 | Raytheon Company | Integrated circuit memory |
US4608672A (en) | 1983-07-14 | 1986-08-26 | Honeywell Inc. | Semiconductor memory |
US4554640A (en) | 1984-01-30 | 1985-11-19 | Monolithic Memories, Inc. | Programmable array logic circuit with shared product terms |
US4646266A (en) | 1984-09-28 | 1987-02-24 | Energy Conversion Devices, Inc. | Programmable semiconductor structures and methods for using the same |
US4710900A (en) | 1984-12-28 | 1987-12-01 | Nec Corporation | Non-volatile semiconductor memory device having an improved write circuit |
US4661927A (en) | 1985-01-15 | 1987-04-28 | Honeywell Inc. | Integrated Schottky logic read only memory |
US4757475A (en) | 1985-05-20 | 1988-07-12 | Fujitsu Limited | Semiconductor memory device having diode matrix type decoder and redundancy configuration |
US5051865A (en) | 1985-06-17 | 1991-09-24 | Fujitsu Limited | Multi-layer semiconductor device |
US4772886A (en) | 1985-11-15 | 1988-09-20 | Alps Electric Co., Ltd. | Matrix driver |
US4800529A (en) | 1986-03-17 | 1989-01-24 | Fujitsu Limited | Semiconductive memory device with current control and comparison means to reduce power consumption and increase operating speed |
US4782340A (en) | 1986-08-22 | 1988-11-01 | Energy Conversion Devices, Inc. | Electronic arrays having thin film line drivers |
US4721885A (en) | 1987-02-11 | 1988-01-26 | Sri International | Very high speed integrated microelectronic tubes |
US4845679A (en) | 1987-03-30 | 1989-07-04 | Honeywell Inc. | Diode-FET logic circuitry |
US4920516A (en) | 1987-05-12 | 1990-04-24 | Fujitsu Limited | Read only memory circuit having a precharged selected bit line |
US4884238A (en) | 1988-03-09 | 1989-11-28 | Honeywell Inc. | Read-only memory |
JPH0298898A (en) | 1988-10-05 | 1990-04-11 | Mitsubishi Electric Corp | Diode read-only memory |
US5463583A (en) | 1989-06-30 | 1995-10-31 | Fujitsu Limited | Non-volatile semiconductor memory device |
US5203731A (en) | 1990-07-18 | 1993-04-20 | International Business Machines Corporation | Process and structure of an integrated vacuum microelectronic device |
US5397957A (en) | 1990-07-18 | 1995-03-14 | International Business Machines Corporation | Process and structure of an integrated vacuum microelectronic device |
US5569973A (en) | 1990-07-18 | 1996-10-29 | International Business Machines Corporation | Integrated microelectronic device |
US5463269A (en) | 1990-07-18 | 1995-10-31 | International Business Machines Corporation | Process and structure of an integrated vacuum microelectronic device |
US5163328A (en) | 1990-08-06 | 1992-11-17 | Colin Electronics Co., Ltd. | Miniature pressure sensor and pressure sensor arrays |
US5296716A (en) | 1991-01-18 | 1994-03-22 | Energy Conversion Devices, Inc. | Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom |
US5357471A (en) | 1992-03-20 | 1994-10-18 | National Semiconductor Corporation | Fault locator architecture and method for memories |
US5390145A (en) * | 1993-04-15 | 1995-02-14 | Fujitsu Limited | Resonance tunnel diode memory |
US5432729A (en) | 1993-04-23 | 1995-07-11 | Irvine Sensors Corporation | Electronic module comprising a stack of IC chips each interacting with an IC chip secured to the stack |
US5576986A (en) | 1993-10-14 | 1996-11-19 | Fuji Electric Co. Ltd. | Memory device using micro vacuum tube |
US5441907A (en) | 1994-06-27 | 1995-08-15 | Taiwan Semiconductor Manufacturing Company | Process for manufacturing a plug-diode mask ROM |
US5493533A (en) * | 1994-09-28 | 1996-02-20 | Atmel Corporation | Dual differential trans-impedance sense amplifier and method |
US5675531A (en) | 1995-04-05 | 1997-10-07 | International Business Machines Corporation | Device for information storage using field emission |
US6117720A (en) | 1995-06-07 | 2000-09-12 | Micron Technology, Inc. | Method of making an integrated circuit electrode having a reduced contact area |
US6613650B1 (en) | 1995-07-31 | 2003-09-02 | Hyundai Electronics America | Active matrix ESD protection and testing scheme |
US5668032A (en) | 1995-07-31 | 1997-09-16 | Holmberg; Scott H. | Active matrix ESD protection and testing scheme |
US5837564A (en) | 1995-11-01 | 1998-11-17 | Micron Technology, Inc. | Method for optimal crystallization to obtain high electrical performance from chalcogenides |
US5719589A (en) | 1996-01-11 | 1998-02-17 | Motorola, Inc. | Organic light emitting diode array drive apparatus |
US5673218A (en) | 1996-03-05 | 1997-09-30 | Shepard; Daniel R. | Dual-addressed rectifier storage device |
US5889694A (en) | 1996-03-05 | 1999-03-30 | Shepard; Daniel R. | Dual-addressed rectifier storage device |
US5640343A (en) | 1996-03-18 | 1997-06-17 | International Business Machines Corporation | Magnetic memory array using magnetic tunnel junction devices in the memory cells |
US5709589A (en) | 1996-03-29 | 1998-01-20 | Boone; Charles Daniel | Hardwood floor finishing process |
US5835396A (en) | 1996-10-17 | 1998-11-10 | Zhang; Guobiao | Three-dimensional read-only memory |
US5840608A (en) | 1996-11-22 | 1998-11-24 | United Microelectronics Corporation | High density ROM and a method of making the same |
US6055180A (en) | 1997-06-17 | 2000-04-25 | Thin Film Electronics Asa | Electrically addressable passive device, method for electrical addressing of the same and uses of the device and the method |
US6259132B1 (en) | 1997-07-08 | 2001-07-10 | Stmicroelectronics S.R.L. | Array of electrically programmable non-volatile semiconductor memory cells comprising ROM memory cells |
US6236587B1 (en) | 1997-09-01 | 2001-05-22 | Thin Film Electronics Asa | Read-only memory and read-only memory devices |
US6075723A (en) | 1997-12-15 | 2000-06-13 | Sony Corporation | Nonvolatile semiconductor memory device and IC memory card using same |
WO1999039394A1 (en) | 1998-02-02 | 1999-08-05 | Uniax Corporation | X-y addressable electric microswitch arrays and sensor matrices employing them |
US6351023B1 (en) | 1998-02-18 | 2002-02-26 | International Business Machines Corporation | Semiconductor device having ultra-sharp P-N junction and method of manufacturing the same |
US6598164B1 (en) | 1998-04-13 | 2003-07-22 | Nüp2 Incorporated | Device and method for reducing piracy of digitized information |
US6185122B1 (en) | 1998-11-16 | 2001-02-06 | Matrix Semiconductor, Inc. | Vertically stacked field programmable nonvolatile memory and method of fabrication |
US7190602B2 (en) | 1998-11-16 | 2007-03-13 | Sandisk 3D Llc | Integrated circuit incorporating three-dimensional memory array with dual opposing decoder arrangement |
US6198682B1 (en) | 1999-02-13 | 2001-03-06 | Integrated Device Technology, Inc. | Hierarchical dynamic memory array architecture using read amplifiers separate from bit line sense amplifiers |
US6462998B1 (en) | 1999-02-13 | 2002-10-08 | Integrated Device Technology, Inc. | Programmable and electrically configurable latch timing circuit |
US6163475A (en) | 1999-02-13 | 2000-12-19 | Proebsting; Robert J. | Bit line cross-over layout arrangement |
US6256767B1 (en) | 1999-03-29 | 2001-07-03 | Hewlett-Packard Company | Demultiplexer for a molecular wire crossbar network (MWCN DEMUX) |
US6559468B1 (en) | 1999-03-29 | 2003-05-06 | Hewlett-Packard Development Company Lp | Molecular wire transistor (MWT) |
US6459095B1 (en) | 1999-03-29 | 2002-10-01 | Hewlett-Packard Company | Chemically synthesized and assembled electronics devices |
US6839260B2 (en) | 2000-01-18 | 2005-01-04 | Hitachi, Ltd. | Semiconductor device having different types of memory cell arrays stacked in a vertical direction |
US20080016414A1 (en) | 2000-06-22 | 2008-01-17 | Contour Semiconductor, Inc. | Low Cost High Density Rectifier Matrix Memory |
US20080013354A1 (en) * | 2000-06-22 | 2008-01-17 | Contour Semiconductor, Inc. | Low Cost High Density Rectifier Matrix Memory |
US7460384B2 (en) | 2000-06-22 | 2008-12-02 | Contour Semiconductor, Inc. | Low cost high density rectifier matrix memory |
US6956757B2 (en) | 2000-06-22 | 2005-10-18 | Contour Semiconductor, Inc. | Low cost high density rectifier matrix memory |
US7593246B2 (en) | 2000-06-22 | 2009-09-22 | Contour Semiconductor, Inc. | Low cost high density rectifier matrix memory |
US7183206B2 (en) | 2000-09-27 | 2007-02-27 | Contour Semiconductor, Inc. | Fabrication of semiconductor devices |
US6586327B2 (en) | 2000-09-27 | 2003-07-01 | Nup2 Incorporated | Fabrication of semiconductor devices |
US20020126526A1 (en) | 2001-03-07 | 2002-09-12 | Taussig Carl P. | Apparatus and methods for marking content of memory storage devices |
DE10111454A1 (en) | 2001-03-09 | 2002-09-26 | Infineon Technologies Ag | Memory arrangement for computer has memory cell field, decoder circuit with word, bit line decoders, read output for reading from individual cells by selecting corresponding word, bit lines |
US20030026120A1 (en) | 2001-03-21 | 2003-02-06 | Scheuerlein Roy E. | Current sensing method and apparatus particularly useful for a memory array of cells having diode-like characteristics |
US20020191434A1 (en) | 2001-06-05 | 2002-12-19 | Carl Taussing | Addressing and sensing a cross-point diode memory array |
US20020196659A1 (en) | 2001-06-05 | 2002-12-26 | Hurst Terril N. | Non-Volatile memory |
US6567295B2 (en) | 2001-06-05 | 2003-05-20 | Hewlett-Packard Development Company, L.P. | Addressing and sensing a cross-point diode memory array |
US20020184459A1 (en) | 2001-06-05 | 2002-12-05 | Carl Taussig | Digital camera memory system |
US6552409B2 (en) | 2001-06-05 | 2003-04-22 | Hewlett-Packard Development Company, Lp | Techniques for addressing cross-point diode memory arrays |
US20020192895A1 (en) | 2001-06-05 | 2002-12-19 | Carl Taussig | Fabrication techniques for addressing cross-point diode memory arrays |
US6385075B1 (en) | 2001-06-05 | 2002-05-07 | Hewlett-Packard Company | Parallel access of cross-point diode memory arrays |
US6721223B2 (en) | 2001-06-15 | 2004-04-13 | Renesas Technology Corp. | Semiconductor memory device |
US20030003633A1 (en) | 2001-06-29 | 2003-01-02 | Ping Mei | Apparatus and fabrication process to reduce crosstalk in pirm memory array |
US6478231B1 (en) | 2001-06-29 | 2002-11-12 | Hewlett Packard Company | Methods for reducing the number of interconnects to the PIRM memory module |
US6744681B2 (en) | 2001-07-24 | 2004-06-01 | Hewlett-Packard Development Company, L.P. | Fault-tolerant solid state memory |
US6587394B2 (en) | 2001-07-24 | 2003-07-01 | Hewlett-Packard Development Company, L.P. | Programmable address logic for solid state diode-based memory |
US20030028699A1 (en) | 2001-08-02 | 2003-02-06 | Michael Holtzman | Removable computer with mass storage |
US7149934B2 (en) | 2002-04-11 | 2006-12-12 | Contour Semiconductor, Inc. | Error correcting memory access means and method |
US20070028150A1 (en) | 2002-04-11 | 2007-02-01 | Contour Semiconductor, Inc. | Error correcting memory access means and method |
US20040145938A1 (en) | 2002-07-12 | 2004-07-29 | Jeno Tihanyi | Non-volatile memory cell |
US20040160805A1 (en) | 2002-08-02 | 2004-08-19 | Unity Semiconductor Corporation | Multi-output multiplexor |
US20060072427A1 (en) | 2003-06-11 | 2006-04-06 | Yoshihiro Kanda | Information storage |
US7376008B2 (en) | 2003-08-07 | 2008-05-20 | Contour Seminconductor, Inc. | SCR matrix storage device |
US20050067675A1 (en) | 2003-08-19 | 2005-03-31 | Shepard Daniel Robert | Molded substrate for topograpy based lithography |
US20050127350A1 (en) | 2003-12-10 | 2005-06-16 | Furkay Stephen S. | Field emission phase change diode memory |
US7330369B2 (en) | 2004-04-06 | 2008-02-12 | Bao Tran | NANO-electronic memory array |
US7088613B2 (en) | 2004-05-14 | 2006-08-08 | Macronix International Co., Ltd. | Method for controlling current during read and program operations of programmable diode |
US7471547B2 (en) | 2004-12-07 | 2008-12-30 | Infineon Technologies Ag | Memory cell array |
US7554873B2 (en) | 2005-03-21 | 2009-06-30 | Macronix International Co., Ltd. | Three-dimensional memory devices and methods of manufacturing and operating the same |
US7054219B1 (en) | 2005-03-31 | 2006-05-30 | Matrix Semiconductor, Inc. | Transistor layout configuration for tight-pitched memory array lines |
US20090141535A1 (en) | 2005-07-01 | 2009-06-04 | Sandisk 3D Llc | Methods involving memory with high dielectric constant antifuses adapted for use at low voltage |
US20070247890A1 (en) | 2006-02-15 | 2007-10-25 | Shepard Daniel R | Nano-vacuum-tubes and their application in storage devices |
US7548454B2 (en) | 2006-03-28 | 2009-06-16 | Contour Semiconductor, Inc. | Memory array with readout isolation |
US7548453B2 (en) | 2006-03-28 | 2009-06-16 | Contour Semiconductor, Inc. | Memory array with readout isolation |
US20070242494A1 (en) | 2006-03-28 | 2007-10-18 | Eric Nestler | Memory array with readout isolation |
US7593256B2 (en) | 2006-03-28 | 2009-09-22 | Contour Semiconductor, Inc. | Memory array with readout isolation |
US7408798B2 (en) | 2006-03-31 | 2008-08-05 | International Business Machines Corporation | 3-dimensional integrated circuit architecture, structure and method for fabrication thereof |
US20090109726A1 (en) | 2007-10-29 | 2009-04-30 | Shepard Daniel R | Non-linear conductor memory |
US20090225579A1 (en) | 2007-11-05 | 2009-09-10 | Shepard Daniel R | Low cost, high-density rectifier matrix memory |
US20090161420A1 (en) | 2007-12-19 | 2009-06-25 | Shepard Daniel R | Field-emitter-based memory array with phase-change storage devices |
US20090225621A1 (en) | 2008-03-05 | 2009-09-10 | Shepard Daniel R | Split decoder storage array and methods of forming the same |
US20090296445A1 (en) | 2008-06-02 | 2009-12-03 | Shepard Daniel R | Diode decoder array with non-sequential layout and methods of forming the same |
Non-Patent Citations (16)
Title |
---|
"Summary Page: National Radio Institute 832," Old-Computers.com, ,http://oldcomputers.com/museum/computer.asp?c=884&st=1., (Apr. 4, 2007) 2 pages. |
Berger, "Models for Contacts to Planar Devices," Solid-State Electronics, vol. 15 (1972), pp. 145-158. |
Crawford et al., "An Improved Tunnel Diode Memory System," IBM Journal (Jul. 1963), pp. 199-206. |
De Graaf et al., "A Novel High-Density Low-Cost Diode Programmable Read only Memory," IEEE IEDM, session 7.6.1 (1996), pp. 189-192. |
Hodges et al., "Analysis and Design of Digital Integrated Circuits," McGraw-Hill Book Company, pp. 27-32., date not available. |
Hurst, "A Survey of Published Information on Universal Logic Arrays," Microelectronics and Reliability, vol. 16 (1977), pp. 663-674. |
International Search Report and Written Opinion in International Patent Application No. PCT/US07/011020, mailed Jul. 18, 2008 (16 pages). |
International Search Report and Written Opinion in International Patent Application No. PCT/US2007/007792, mailed Oct. 30, 2007 (12 pages). |
International Search Report and Written Opinion in International Patent Application No. PCT/US2008/075986, mailed Jan. 22, 2009 (13 pages). |
International Search Report and Written Opinion in International Patent Application No. PCT/US2008/082503, mailed Feb. 25, 2009 (13 pages). |
International Search Report in International Application No. PCT/US99/02239, mailed May 31, 1999. |
McConnell et al., "Diode-Transistor Logic," Digital Electronics, Chapter 5, West Virginia Univ. (2002), pp. 1-14. |
Near et al., "Read-only Memory Adds to Calculators Repertoire," Electronics (Feb. 3, 1969), pp. 70-77. |
Partial International Search Report in International Patent Application No. PCT/US07/011020, mailed Apr. 14, 2008, 6 pages. |
Wang et al., "High-Current-Density Thin-Film Silcone Diodes Grown at Low Temperature," Applied Phys. Lett., vol. 85(11), pp. 2122-2124 (Sep. 13, 2004). |
Wang et al., "Low Temperature Thin-Film Silicon Diodes for Consumer Electronics," Mater. Res. Soc. Symp. Proc., vol. 862 (2005), pp. A15.5.1-A15.5.6. |
Also Published As
Publication number | Publication date |
---|---|
USRE41733E1 (en) | 2010-09-21 |
US5673218A (en) | 1997-09-30 |
US20080013398A1 (en) | 2008-01-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5889694A (en) | Dual-addressed rectifier storage device | |
USRE42310E1 (en) | Dual-addressed rectifier storage device | |
US7652916B2 (en) | SCR matrix storage device | |
EP1701356B1 (en) | Memory cell and memory device | |
US6567296B1 (en) | Memory device | |
JPS619895A (en) | Semiconductor memory circuit | |
EP0023792B1 (en) | Semiconductor memory device including integrated injection logic memory cells | |
US4984207A (en) | Semiconductor memory device | |
JPS6013119Y2 (en) | electronic circuit | |
KR910003595B1 (en) | Semiconductor memory device having segmented word line | |
US4347585A (en) | Reproduce only storage matrix | |
US5966324A (en) | Static semiconductor memory device driving bit line potential by bipolar transistor shared by adjacent memory cells | |
US4424582A (en) | Semiconductor memory device | |
US4347584A (en) | Programmable read-only memory device | |
JPS62254463A (en) | Static memory cell with bipolar and mos devices | |
EP0181819B1 (en) | Memory cell power scavenging apparatus and method | |
IE53338B1 (en) | Field programmable device | |
EP0023408B1 (en) | Semiconductor memory device including integrated injection logic memory cells | |
US3725881A (en) | Two terminal bipolar memory cell | |
US4922411A (en) | Memory cell circuit with supplemental current | |
JPH0210518B2 (en) | ||
JPS581919Y2 (en) | memory circuit | |
JPS61294686A (en) | Memory circuit | |
JPH06325577A (en) | Semiconductor storage device | |
JPS62140293A (en) | Memory circuit |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: NUP2 INCORPORATED, MASSACHUSETTS Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:SHEPARD, DANIEL R.;REEL/FRAME:020127/0319 Effective date: 20010521 Owner name: CONTOUR SEMICONDUCTOR, INC., MASSACHUSETTS Free format text: CHANGE OF NAME;ASSIGNOR:NUP2 INCORPORATED;REEL/FRAME:020127/0251 Effective date: 20040928 |
|
AS | Assignment |
Owner name: SARAH G. KURZON 2001 REVOCABLE TRUST, NEW HAMPSHIR Free format text: SECURITY AGREEMENT;ASSIGNOR:CONTOUR SEMICONDUCTOR, INC.;REEL/FRAME:029659/0615 Effective date: 20130118 Owner name: STILL RIVER FUND III, LIMITED PARTNERSHIP, MASSACH Free format text: SECURITY AGREEMENT;ASSIGNOR:CONTOUR SEMICONDUCTOR, INC.;REEL/FRAME:029659/0615 Effective date: 20130118 Owner name: AMERICAN CAPITAL, LTD., MARYLAND Free format text: SECURITY AGREEMENT;ASSIGNOR:CONTOUR SEMICONDUCTOR, INC.;REEL/FRAME:029659/0615 Effective date: 20130118 Owner name: RUNNING DEER TRUST, MASSACHUSETTS Free format text: SECURITY AGREEMENT;ASSIGNOR:CONTOUR SEMICONDUCTOR, INC.;REEL/FRAME:029659/0615 Effective date: 20130118 Owner name: PERRIN, DONALD, MASSACHUSETTS Free format text: SECURITY AGREEMENT;ASSIGNOR:CONTOUR SEMICONDUCTOR, INC.;REEL/FRAME:029659/0615 Effective date: 20130118 Owner name: RUNNING DEER FOUNDATION, MASSACHUSETTS Free format text: SECURITY AGREEMENT;ASSIGNOR:CONTOUR SEMICONDUCTOR, INC.;REEL/FRAME:029659/0615 Effective date: 20130118 |
|
AS | Assignment |
Owner name: AMERICAN CAPITAL, LTD., MARYLAND Free format text: SECURITY INTEREST;ASSIGNOR:CONTOUR SEMICONDUCTOR, INC.;REEL/FRAME:033063/0617 Effective date: 20140530 |
|
AS | Assignment |
Owner name: PERRIN, DONALD, MASSACHUSETTS Free format text: SECURITY INTEREST;ASSIGNOR:CONTOUR SEMICONDUCTOR, INC.;REEL/FRAME:033204/0428 Effective date: 20140620 Owner name: AMERICAN CAPITAL, LTD., MARYLAND Free format text: SECURITY INTEREST;ASSIGNOR:CONTOUR SEMICONDUCTOR, INC.;REEL/FRAME:033204/0428 Effective date: 20140620 Owner name: SARAH G. KURZON 2001 REVOCABLE TRUST, NEW HAMPSHIR Free format text: SECURITY INTEREST;ASSIGNOR:CONTOUR SEMICONDUCTOR, INC.;REEL/FRAME:033204/0428 Effective date: 20140620 Owner name: RUNNING DEER FOUNDATION, MASSACHUSETTS Free format text: SECURITY INTEREST;ASSIGNOR:CONTOUR SEMICONDUCTOR, INC.;REEL/FRAME:033204/0428 Effective date: 20140620 Owner name: STILL RIVER FUND III, LIMITED PARTNERSHIP, MASSACH Free format text: SECURITY INTEREST;ASSIGNOR:CONTOUR SEMICONDUCTOR, INC.;REEL/FRAME:033204/0428 Effective date: 20140620 Owner name: OVONYX, INC., MICHIGAN Free format text: SECURITY INTEREST;ASSIGNOR:CONTOUR SEMICONDUCTOR, INC.;REEL/FRAME:033204/0428 Effective date: 20140620 Owner name: RUNNING DEER TRUST, MASSACHUSETTS Free format text: SECURITY INTEREST;ASSIGNOR:CONTOUR SEMICONDUCTOR, INC.;REEL/FRAME:033204/0428 Effective date: 20140620 |
|
AS | Assignment |
Owner name: CONTOUR SEMICONDUCTOR, INC., MASSACHUSETTS Free format text: RELEASE OF SECURITY INTEREST;ASSIGNOR:AMERICAN CAPITAL, LTD.;REEL/FRAME:033225/0330 Effective date: 20140620 |
|
FEPP | Fee payment procedure |
Free format text: PAT HOLDER NO LONGER CLAIMS SMALL ENTITY STATUS, ENTITY STATUS SET TO UNDISCOUNTED (ORIGINAL EVENT CODE: STOL); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY Free format text: PAYOR NUMBER ASSIGNED (ORIGINAL EVENT CODE: ASPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY |
|
AS | Assignment |
Owner name: CONTOUR SEMICONDUCTOR, INC., MASSACHUSETTS Free format text: RELEASE BY SECURED PARTY;ASSIGNORS:AMERICAN CAPITAL, LTD.;STILL RIVER FUND III, LIMITED PARTNERSHIP;SARAH G. KURZON 2001 REVOCABLE TRUST;AND OTHERS;REEL/FRAME:035685/0571 Effective date: 20150515 |
|
AS | Assignment |
Owner name: CONTOUR SEMICONDUCTOR, INC., MASSACHUSETTS Free format text: RELEASE BY SECURED PARTY;ASSIGNORS:AMERICAN CAPITAL, LTD.;STILL RIVER FUND III, LIMITED PARTNERSHIP;SARAH G. KURZON 2001 REVOCABLE TRUST;AND OTHERS;REEL/FRAME:035749/0956 Effective date: 20150515 |
|
AS | Assignment |
Owner name: HGST NETHERLANDS B.V., NETHERLANDS Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:CONTOUR SEMICONDUCTOR, INC.;REEL/FRAME:035748/0909 Effective date: 20150515 |
|
AS | Assignment |
Owner name: HGST, INC., CALIFORNIA Free format text: CORRECTIVE ASSIGNMENT TO CORRECT THE NAME AND ADDRESS OF THE ASSIGNEE PREVIOUSLY RECORDED ON REEL 035748 FRAME 0909. ASSIGNOR(S) HEREBY CONFIRMS THE NAME AND ADDRESS OF THE ASSIGNEE SI HGST, INC.,3403 YERBA BUENA ROAD,SAN JOSE, CA 95135;ASSIGNOR:CONTOUR SEMICONDUCTOR, INC.;REEL/FRAME:035831/0594 Effective date: 20150515 |
|
AS | Assignment |
Owner name: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT, IL Free format text: SECURITY AGREEMENT;ASSIGNOR:HGST, INC.;REEL/FRAME:039389/0684 Effective date: 20160712 |
|
AS | Assignment |
Owner name: HGST, INC., CALIFORNIA Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT;REEL/FRAME:039689/0950 Effective date: 20160719 |
|
AS | Assignment |
Owner name: WESTERN DIGITAL TECHNOLOGIES, INC., CALIFORNIA Free format text: RELEASE OF SECURITY INTEREST AT REEL 039389 FRAME 0684;ASSIGNOR:JPMORGAN CHASE BANK, N.A.;REEL/FRAME:058965/0535 Effective date: 20220203 |