USRE40781E1 - Method of providing a hydrophobic layer and condenser microphone having such a layer - Google Patents

Method of providing a hydrophobic layer and condenser microphone having such a layer Download PDF

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USRE40781E1
USRE40781E1 US11/502,577 US50257706A USRE40781E US RE40781 E1 USRE40781 E1 US RE40781E1 US 50257706 A US50257706 A US 50257706A US RE40781 E USRE40781 E US RE40781E
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diaphragm
plate
microphone according
hydrophobic
openings
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Ib Johannsen
Niels Bent Larsen
Matthias Mullenborn
Pirmin Hermann Otto Rombach
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TDK Corp
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Pulse Mems ApS
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    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04RLOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00Electrostatic transducers
    • H04R19/005Electrostatic transducers using semiconductor materials
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00Nanotechnology for materials or surface science, e.g. nanocomposites
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04RLOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00Electrostatic transducers
    • H04R19/04Microphones
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04RLOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R31/00Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor

Definitions

  • the static distance between the diaphragm and the back-plate is preferably smaller than 10 ⁇ m, such as smaller than 7 ⁇ m, such as smaller than 5 ⁇ m, such as smaller than 3 ⁇ m, such as smaller than 1 ⁇ m, such as smaller than 0.7 ⁇ m, such as smaller than 0.5 ⁇ m, such smaller than 0.3 ⁇ m, such as approximately 0.2 ⁇ m.
  • the static distance between the diaphragm and the back-plate may, thus, be approximately 1 ⁇ m, such as approximately 0.5 ⁇ m, approximately 0.7 ⁇ m, approximately 0.9 ⁇ m, approximately 1.2 ⁇ m, or approximately 1.5 ⁇ m.
  • the method may further comprise the step of positioning at least part of the diaphragm and at least part of the back-plate in a container comprising a gaseous phase of the hydrophobic layer base material to be provided on the inner surfaces.
  • the container may alternatively or additionally comprise a vapour of the hydrophobic layer base material.
  • the hydrophobic layer is provided using a vapour deposition method.

Abstract

A method of providing at least part of a diaphragm and at least a part of a back-plate of a condenser microphone with a hydrophobic layer so as to avoid stiction between said diaphragm and said back-plate. The layer is deposited via a number small of openings in the back-plate, the diaphragm and/or between the diaphragm and the back-plate. Provides a homogeneous and structured hydrophobic layer, even to small internal cavities of the microstructure. The layer may be deposited by a liquid phase or a vapor phase deposition method. The method may be applied naturally in continuation of the normal manufacturing process.
Further, a MEMS condenser microphone is provided having such a hydrophobic layer. The static distance between the diaphragm and the back-plate of the microphone is smaller than 10 μm.

Description

TECHNICAL FIELD
The present invention relates to a method of providing a hydrophobic layer to inner surfaces of a microstructure, in particular to inner surfaces of a condenser microphone, in order to avoid or prevent stiction between said inner surfaces.
BACKGROUND OF THE INVENTION
During the manufacturing as well as the operation of micro electromechanical system (MEMS) devices, it is well known that failure due to adhesion between surfaces, e.g. between a moving surface and a substantially stationary surface, of the device may occur. This phenomenon is referred to as stiction. Stiction occurs with a larger probability in microstructures, typically having dimensions in the order of magnitude of 1-3 μm because the surface-to-volume ratio increases and surface forces, which are responsible for stiction, are correspondingly higher. Stiction may occur during or after the manufacturing process (i.e. during operation), after releasing of the microstructure where the surface tension of the rinse liquid is sufficiently strong to pull the suspending microstructures in contact with the substrate or another compliant or stiff counter surface, leading to permanent adhesion. This kind of stiction is referred to as ‘after-release stiction’. Alternatively or additionally, stiction may occur after a successful release, e.g. when a microstructure is exposed to an environment of increased humidity or changing temperature. If the microstructure is first exposed to a humid environment, water vapour can condense and form a water film/droplets on the device surfaces. When the distance between the two surfaces decreases during device operation and the water film/droplets of one surface touch the counter surface, the two surfaces will stick together. This phenomenon may occur during the normal device operation and is therefore referred to as ‘in-use stiction’. In-use stiction is in particular a problem in microstructures in which opposite surfaces, e.g. a diaphragm and a back-plate, form capacitors in combination with each other. This is, e.g., the case in condenser microphones and condenser pressure sensors.
The present invention is concerned with preventing stiction in microstructures, in particular in MEMS condenser microphones.
It is further known that the application of a hydrophobic layer to the surfaces in question can solve, or a least relieve, the problem. This has, e.g., been described in U.S. Pat. No. 5,822,170, in “Anti-Stiction Hydrophobic Surfaces for Microsystems” by P. Voumard, et al., CSEM scientific and technical report 1998, Neuchâtel, Switzerland, 26, in “The property of plasma polymerized fluorocarbon film in relation to CH4/C4F8 ratio and substrate temperature” by Y. Matsumoto, et al., Proc. of Transducers '99, Jun. 7-10, 1999, Sendai, Japan, 34-37, in “Self-Assembled Monolayer Films as Durable Anti-Stiction Coatings for Polysilicon Microstructures” By M. R. Houston, et al. Solid-State Sensor and Actuator Workshop Hilton Head, South Carolina, Jun. 2-6, 1996, 42-47, in “Elimination of Post-Release Adhesion in Microstructures Using Conformal Fluorocarbon Coatings” by P. F. Man, et al., Journal of Microelectromechanical Systems, Vol. 6, No. 1, March 1997, in “Anti-Stiction Methods for Micromechanical Devices: A Statistical Comparison of Performance” by S. Tatic-Lucid, et al., Proc. of Transducers '99, Jun. 7-10, 1999, Sendai, Japan, 522-525, in “A New Class of Surface Modification for Stiction Reduction”, by C.-H. Oh, et al., Proc. of Transducers '99, Jun. 7-10, 1999, Sendai, Japan, 30-33, in “Self-Assembled Monolayers as Anti-Stiction Coatings for Surface Microstructures”, by R. Maboudin, Proc. of Transducers '99, Jun. 7-10, 1999, Sendai, Japan, 22-25, and in “Anti-Stiction Silanization Coating to Silicon Micro-Structures by a Vapor Phase Deposition Process”, by J. Sakata, et al., Proc. of Transducers '99, Jun. 7-10, 1999, Sendai, Japan, 26-29.
The references above describe depositions of a hydrophobic layer, e.g. a self-assembled monolayer (SAM) onto surfaces of the microstructure, the microstructure preferably being made from a silicon material, such as a Si-wafer or poly-silicon layers. The deposition is primarily performed by successively positioning the microstructure in various liquids. However, in “Anti-Stiction Silanization Coating to Silicon Micro-Structures by a Vapor Phase Deposition Process”, by J. Sakata, et al., Proc. of Transducers '99, Jun. 7-10, 1999, Sendai, Japan, 26-29, The deposition is performed by a vapour phase deposition process (dry process), in which the microstructure is positioned in a container containing a gas or a vapour. The advantage of this process is that it is possible to obtain a homogeneous coating, even inside a complicated microstructure, and even inside a space with narrow gaps. However, it has turned out that using a vapour phase deposition process results in a hydrophobic layer having a surface which is less structured than the surface of a hydrophobic layer which has been deposited using a liquid phase deposition process. This is due to the fact that the molecules forming the monolayer form cross bindings in addition to forming bonds to the surface. With a certain probability, this reaction already happens in the gas-phase. Therefore, molecule clusters are deposited that cannot chemically bind to the surface anymore or that can only partly chemically bind to the surface. This results in a less structured layer and therefore rough surface, which makes it possible for water droplets to attach to the surface, even though the material surface otherwise would be highly hydrophobic. Thus, the hydrophobic property of the surfaces is partly or possibly totally reduced. Furthermore, the process described in this reference requires special equipment. In addition, the sacrificial layer has to be removed and the structure has to be released before the hydrophobic layer can be applied. The release process is a critical process with a certain yield, which will reduce the total yield of the manufacturing process and increase the manufacturing costs. The gas phase deposition also needs pumping steps, which bear the risk for stiction due to fast pressure transients. Therefore, the coating process performed from a liquid material is preferred.
It is, thus, desirable to be able to provide a method for providing a hydrophobic layer to the inner parts of a microstructure in such a way that the hydrophobic property of the layer is maintained.
SUMMARY OF THE INVENTION
It is an object of the present invention to provide a method of providing a microstructure with a hydrophobic layer in such a way that a very structured layer may be applied to microstructures, even to microstructures having internal spaces with narrow gaps.
It is a further object of the present invention to provide a method of providing a microstructure with a hydrophobic layer, which may be introduced as a natural part of the manufacturing process for the microstructure.
It is an even further object of the present invention to provide a method of providing a microstructure with a hydrophobic layer, which minimises the number of production steps of the manufacture of the microstructure.
It is an even further object of the present invention to provide a condenser microphone in which the stiction phenomenon is avoided.
According to the present invention the above and other objects are fulfilled by a method of providing at least part of a diaphragm and at least a part of a back-plate of a condenser microphone with a hydrophobic layer so as to avoid stiction between said diaphragm and said back-plate, said method comprising the steps of
    • providing a condenser microphone comprising a diaphragm and a back-plate, wherein an inner surface of said diaphragm forms a capacitor in combination with an inner surface of said back-plate, and
    • providing the hydrophobic layer onto the inner surfaces of the diaphragm and the back-plate through a number of openings, said openings being in the back-plate, in the diaphragm and/or between the diaphragm and the back-plate.
The condenser microphone may be a microphone for recording ordinary sound waves, e.g. propagating in atmospheric air. However, it may additionally or alternatively be a microphone which is adapted to perform measurements in a hostile environment, e.g. in a humid, extremely hot, or extremely cold environment. In this case the condenser microphone needs to be able to function under such extreme conditions. It is especially important that water vapour (or other vapours which the microphone may be in contact with) can not condense easily on the inner parts of the microphone, since this would lead to water droplets and a temporary stiction between the diaphragm and the back-plate, which in turn causes the functionality of the microphone to decreases. If the water in the air gap dries, the back-plate and the diaphragm have to separate again. According to the invention such condensation is prevented or at least reduced by providing the diaphragm and at least part of the back-plate with a hydrophobic layer.
The microphone is preferably a MEMS microphone, i.e. at least the diaphragm and/or the back-plate are manufactured using semiconductor technology.
An inner surface of the diaphragm and an inner surface of the back-plate of the microphone form a capacitor. Since the diaphragm is movable in relation to the back-plate, which is substantially stationary, the capacitance of said capacitor depends on the immediate distance between the diaphragm and the back-plate.
The hydrophobic layer is provided onto the inner surfaces of the diaphragm and the back-plate, respectively, through a number of openings. The openings are positioned in the back-plate, in the diaphragm and/or between the diaphragm and the back-plate. Thus, the coating material may be applied to inner surfaces of the microphone in a homogeneous and structured manner, even if the microphone comprises small cavities to which it would otherwise be difficult to gain access. Furthermore, this coating process may advantageously be applied in continuation of the normal manufacturing procedure. Thus, it is neither necessary to dry the microphone after the normal manufacturing steps before the coating process, nor to use special equipment for the process. This renders the coating process of the present invention cost effective and easy to perform, which in turn makes it very attractive for commercial purposes.
For the gas-phase deposition but even more for the liquid deposition the dynamics of the deposition processes have to be taken into account. It is very difficult to deposit the coating material into the air gap of a MEMS microphone with typical lateral dimensions (back-plate or diaphragm radius and side length, respectively) of 0.5 mm to 2 mm and typical air gap heights of only 0.3 μm to 10 μm. These high aspect ratios reduce the deposition rate and make the process very time consuming and inefficient. In order to get a direct access to the middle part of the air gap, the deposition has to be performed through a number of openings in the back-plate, in the diaphragm, and/or gaps at the periphery of the back-plate and the diaphragm. This makes the process faster and thus more cost effective.
At least the inner surfaces of the diaphragm and the back-plate may be made from a hydrophilic material. If the inner diaphragm surface and/or the inner surface of the back-plate are hydrophilic, this property would cause stiction if water would dry out the air gap volume. The term ‘hydrophilic material’ could be interpreted as a material having a surface which shows with water a contact angle below 90°. Thus, water droplets may easily form on a hydrophilic surface. Materials that form hydrophilic surfaces may, e.g., be silicon, poly-silicon, SiO2, SixNy (such as Si3N4), and/or any other suitable material.
The inner surface of the diaphragm and/or the inner surface of the back-plate may, however, process hydrophobic properties which need to be improved.
In one embodiment of the present invention the smallest dimension of each of the openings does not exceed 10 μm, such as not exceeding 7 μm, such as not exceeding 5 μm, such as not exceeding 3 μm, such as not exceeding 1 μm, such as not exceeding 0.7 μm, such as not exceeding 0.5 μm. The smallest dimension of each of the openings may, thus, be approximately 3 μm, such as approximately 2 μm, approximately 4 μm, approximately 2.5 μm, approximately 3.5 μm, approximately 2.7 μm, or approximately 3.2 μm. The smallest dimension of each of the openings may, alternatively, be larger. The smallest dimension of each of the openings may also be even smaller.
One or more of the openings may be shaped as substantially circular hole(s), in which case the smallest dimension of each opening may refer to the diameter of such a hole. Alternatively or additionally, one or more of the openings may be shaped as elongated groove(s), in which case the smallest dimension of each opening may refer to the transversal size of such a groove. Alternatively or additionally, one or more of the openings may be shaped as a square, a rectangle, or any other polygonal shape, and/or one or more of the openings may be shaped in any other suitable way.
The static distance between the diaphragm and the back-plate is preferably smaller than 10 μm, such as smaller than 7 μm, such as smaller than 5 μm, such as smaller than 3 μm, such as smaller than 1 μm, such as smaller than 0.7 μm, such as smaller than 0.5 μm, such smaller than 0.3 μm, such as approximately 0.2 μm. The static distance between the diaphragm and the back-plate may, thus, be approximately 1 μm, such as approximately 0.5 μm, approximately 0.7 μm, approximately 0.9 μm, approximately 1.2 μm, or approximately 1.5 μm.
The term ‘static distance’ should be interpreted as the distance between the diaphragm and the back-plate when the diaphragm is in a static equilibrium. In this case inner surfaces of the diaphragm and the back-plate will normally be approximately parallel to each other, and the ‘static distance’ should be understood as the distance between these inner surfaces along a direction being normal to the two parallel inner surfaces.
The step of providing the hydrophobic layer may be performed by chemical binding of the hydrophobic layer to poly-silicon, silicon oxide, silicon nitride and/or silicon-rich silicon nitride surfaces, and forming hydrophobic chains from said hydrophobic layer, said hydrophobic chains pointing away from the surface to which the binding is formed.
In this case at least the diaphragm and/or the back-plate may be manufactured from one or more of the above mentioned materials.
The step of providing the hydrophobic layer may comprise the steps of
    • forming a molecule monolayer, and
    • cross linking between molecules and multi binding to surfaces
In this embodiment the provided hydrophobic layer is very durable and stable.
The hydrophobic layer base material may comprise an alkylsilane, such as:
CnH2n+1C2H4SiX3; X═OCH3 or OCH2CH3 or Cl; n=1, 2, 3, . . .
CnH2n+1C2H4SiX2Y; X═OCH3 or OCH2CH3 or Cl; Y═CmH2m+1; n=1, 2, 3, . . . ; m=1, 2, 3, . . .
or
CnH2n+1C2H4SiXY2; X═OCH3 or OCH2CH3 or Cl; Y═CmH2m+1; n=1, 2, 3, . . . ; m=1, 2, 3, . . .
Alternatively, the hydrophobic layer base material may comprises a perhaloalkylsilane, e.g. a perfluoroalkylsilane, such as
CnF2n+1C2H4SiX3; X═OCH3 or OCH2CH3 or Cl; n=1, 2, 3, . . .
CnF2n+1C2H4SiX2Y; X═OCH3 or OCH2CH3 or Cl; Y═CmH2m+1; n=1, 2, 3, . . . ; m=1, 2, 3, . . .
or
CnF2n+1C2H4SiXY2; X═OCH3 or OCH2CH3 or Cl; Y═CmH2m+1; n=1, 2, 3, . . . ; m=1, 2, 3, . . .
The method may further comprise the step of positioning at least part of the diaphragm and at least part of the back-plate in a liquid comprising a liquid phase of the hydrophobic layer material to be provided on the inner surfaces. In this embodiment the hydrophobic layer is provided using a liquid phase deposition method. As mentioned above, this usually results in a very structured monolayer being deposited.
Alternatively, the method may further comprise the step of positioning at least part of the diaphragm and at least part of the back-plate in a container comprising a gaseous phase of the hydrophobic layer base material to be provided on the inner surfaces. The container may alternatively or additionally comprise a vapour of the hydrophobic layer base material. In this embodiment the hydrophobic layer is provided using a vapour deposition method.
Preferably, the hydrophobic layer being provided has a contact angle for water being between 90° and 130°, such as between 100° and 110°.
The hydrophobic layer being provided is preferably stable at temperatures between −40° C. and 130° C., such as temperatures between −30° C. and 110° C. It is most preferably stable at temperatures up to at least 400° C. for at least 5 minutes.
According to another aspect the present invention provides a condenser microphone comprising a diaphragm and a back-plate, wherein an inner surface of said diaphragm forms a capacitor in combination with an inner surface of said back-plate, said back-plate and/or said diaphragm is/are provided with a number of openings, and said inner surfaces being provided with a hydrophobic layer, and wherein the static distance between said diaphragm and said back-plate is smaller than 10 μm.
The condenser microphone according to the invention is thus a microstructure in which inner surfaces of a narrow space or cavity (i.e. the space or cavity defined by the inner surfaces of the back-plate and the diaphragm, respectively) have been provided with a hydrophobic layer. The hydrophobic layer has most preferably been provided via the number of openings, i.e. according to the method described above.
At least the inner surfaces of the diaphragm and the back-plate may be made from a hydrophilic material as described above. However, the inner surface of the diaphragm and/or the inner surface of the back-plate may, to some extend, posses hydrophobic properties which it is desirable to improve.
Preferably, the smallest dimension of each of the openings does not exceed 10 μm, such as not exceeding 5 μm, such as not exceeding 1 μm, such as not exceeding 0.5 μm. The smallest dimension of each of the openings may, thus, be approximately 3 μm.
The hydrophobic layer base material may comprise an alkylsilane, such as
CnH2n+1C2H4SiX3; X═OCH3 or OCH2CH3 or Cl; n=1, 2, 3, . . .
CnH2n+1C2H4SiX2Y; X═OCH3 or OCH2CH3 or Cl; Y═CmH2m+1; n=1, 2, 3, . . . ; m=1, 2, 3, . . .
or
CnH2n+1C2H4SiXY2; X═OCH3 or OCH2CH3 or Cl; Y═CmH2m+1; n=1, 2, 3, . . . ; m=1, 2, 3, . . .
Alternatively, the hydrophobic layer base material may comprise a perhaloalkylsilane, e.g. a perfluoroalkylsilane, such as
CnF2n+1C2H4SiX3; X═OCH3 or OCH2CH3 or Cl; n=1, 2, 3, . . .
CnF2n+1C2H4SiX2Y; X═OCH3 or OCH2CH3 or Cl; Y═CmH2m+1; n=1, 2, 3, . . . ; m=1, 2, 3, . . .
or
CnF2n+1C2H4SiXY2; X═OCH3 or OCH2CH3 or Cl; Y═CmH2m+1; n=1, 2, 3, . . .
The static distance between the diaphragm and the back-plate may be smaller than 5 μm, such as smaller than 1 μm, such as smaller than 0.5 μm, such as smaller than 0.3 μm. The static distance between the diaphragm and the back-plate may, thus, be approximately 1 μm, such as approximately 0.9 μm.
The hydrophobic layer preferably has a contact angle for water being between 90° and 130°, such as between 100° and 110°, and it is preferably stable at temperatures between −40° C. and 130° C., such as temperature between −30° C. and 110° C. Most preferably, the hydrophobic layer is stable at temperatures up to at least 400° C. for at least 5 minutes.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is a schematic drawing of a condenser microphone cross section during a manufacturing process, before sacrificial layer SiO2 etching,
FIG. 2 shows the condenser microphone cross section of FIG. 1, but after sacrificial layer SiO2 etching, and
FIG. 3 shows the condenser microphone cross section of FIGS. 1 and 2, after a hydrophobic coating has been applied.
DETAILED DESCRIPTION OF THE DRAWINGS
FIGS. 1-3 illustrate the last part of a manufacturing process for a condenser microphone 1, including applying a hydrophobic coating to the microphone 1, the process being performed in accordance with the present invention.
The microphone 1 comprises a supporting structure 2, a back-plate 3, and a diaphragm 4. The supporting structure 2 is preferable made from a silicon substrate, the back-plate 3 is preferably made from poly-silicon, and the diaphragm 4 is preferably made from a poly-silicon/silicon-rich silicon nitride (layers 5) sandwich. The back-plate 3 is provided with a number of openings 6 through which the hydrophobic coating material may pass (see below). In the Figures there is shown five openings 6 for illustrative purposes. However, in reality the number of openings 6 occurring in a back-plate of 1×1 mm2 will typically be in the order of 30,000. The diaphragm 4 is movable by a sound pressure and the back-plate 3 is substantially stationary, and in combination the diaphragm 4 and the back-plate 3 form a capacitor, the capacitance of which depends on the immediate distance between the two.
During the manufacturing of the microphone 1, a sacrificial layer 7 is applied to the microphone 1 in order to define the air gap height. The sacrificial layer 7 is preferably made from SiO2, SiON or SiGeON. When the process steps which are normally applied have been carried out, the sacrificial layer 7 needs to be at least partially removed in order to allow the diaphragm 4 to move in relation to the back-plate 3. This sacrificial layer 7 may be removed by an etching process using HF (hydrofluoric acid) followed by a water rinse. FIG. 1 shows the microphone 1 before the sacrificial etching process is applied, and FIG. 2 shows the microphone 1 after the sacrificial etching process is applied. It is clear that the sacrificial layer 7 which is present in FIG. 1 has been removed from the microphone 1 of FIG. 2.
The microphone 1 is then cleaned by means of a so-called ‘piranha clean’. The microphone 1 is dipped into a container containing a liquid of three parts H2O2 and seven parts H2SO4. Subsequently, the microphone 1 is water rinsed.
After the water rinse the microphone 1 is transferred into a container containing isopropanol (IPA, 2-propanol) in order to perform an IPA rinse. This step is repeated twice, i.e. the microphone 1 is, in turn, transferred into two other containers containing a fresh IPA solution. Subsequently, the microphone 1 is transferred into a container containing heptane in order to perform a heptane rinse. This step is also repeated twice as described above.
Next, the actual coating step of is performed by means of silane deposition. This is done by transferring the microphone to a container containing heptane with perhaloalkylsilanes, e.g. perfluoroalkylsilanes, or alkylsilanes, i.e. the actual hydrophobic coating material. Due to the openings 6 provided in the back-plate 3, the coating material may enter the inner parts of the microphone 1, i.e. the parts defined by the opposite surfaces of the back-plate 3 and the diaphragm 4, respectively. The coating material may, thus, be deposited to the surfaces of these inner parts, such as the inner surfaces of the back-plate 3 and the diaphragm 4, respectively. Furthermore, since the deposition is performed using a liquid phase deposition method, the resultant hydrophobic layer is a structured monolayer. Thus, the hydrophobic properties of the material are maintained at a high level.
Subsequently, first the heptane rinse steps and then the IPA rinse steps described above are repeated. Then the microphone 1 is water rinsed, dried, and post-baked in order to stabilise the coating.
The IPA rinse steps, the heptane rinse steps, the coating process and/or the water rinse steps described above may, alternatively, be performed by continuously renewing the solution in the container, thus avoiding to transfer the microphone 1 from one container to another during the rinse step in question. This reduces the exposure to air of the microphone 1 and, thus, the probability of drying before the coating process is finished. This makes the coating process easier to handle, i.e. more attractive for commercial purposes.
FIG. 3 shows the microphone 1 after the coating process described above has been performed. The resulting coating is shown as a dotted line.
The coating process as described above may advantageously be performed in continuation of the normal manufacturing process.
Thus, a method of providing at least part of a diaphragm and at least a part of a back-plate of a condenser microphone with a hydrophobic layer has been provided which is easy to perform, and, thus, attractive for commercial purposes. Furthermore, a condenser microphone has been provided in which in-use stiction between the diaphragm and the back-plate is avoided, or at least prevented to a great extend.

Claims (73)

1. A condenser microphone comprising a diaphragm and a back-plate, wherein an inner surface of said diaphragm forms a capacitor in combination with an inner surface of said back-plate, said back-plate and/or said diaphragm is/are provided with a number of openings, and said inner surface of the back-plate and said inner surface of the diaphragm being provided with a hydrophobic layer, and wherein the static distance between said diaphragm and said back-plate is smaller than 10 μm.
2. A condenser microphone according to claim 1, wherein at least the inner surfaces of the diaphragm and the back-plate are made from a hydrophilic material.
3. A condenser microphone according to claim 1, wherein the smallest dimension of each of the openings does not exceed 10 μm.
4. A condenser microphone according to claim 3, wherein the smallest dimension of each of the openings does not exceed 5 μm.
5. A condenser microphone according to claim 4, wherein the smallest dimension of each of the openings does not exceed 1 μm.
6. A condenser microphone according to claim 5, wherein the smallest dimension of each of the openings does not exceed 0.5 μm.
7. A condenser microphone according to claim 4, wherein the smallest dimension of each of the openings is approximately 3 μm.
8. A condenser microphone according to claim 1, wherein the hydrophobic layer base material comprises an alkylsilane.
9. A condenser microphone according to claim 1, wherein the hydrophobic layer base material comprises a perhaloalkylsilane.
10. A condenser microphone according to claim 1, wherein the static distance between the diaphragm and the back-plate is smaller than 5 μm.
11. A condenser microphone according to claim 10, wherein the static distance between the diaphragm and the back-plate is smaller than 1 μm.
12. A condenser microphone according to claim 11, wherein the static distance between the diaphragm and the back-plate is smaller than 0.5 μm.
13. A condenser microphone according to claim 12, wherein the static distance between the diaphragm and the back-plate is smaller than 0.3 μm.
14. A condenser microphone according to claim 11, wherein the static distance between the diaphragm and the back-plate is approximately 0.9 μm.
15. A condenser microphone according to claim 1, wherein the hydrophobic layer has a contact angle for water being between 90° and 130°.
16. A condenser microphone according to claim 15, wherein the hydrophobic layer has a contact angle for water being between 100° and 110°.
17. A condenser microphone according to claim 1, wherein the hydrophobic layer is stable at temperatures between −40° C. and 130° C.
18. A condenser microphone according to claim 17, wherein the hydrophobic layer is stable at temperatures between −30° C. and 110° C.
19. A condenser microphone according to claim 1, wherein the hydrophobic layer is stable at temperatures up to at least 400° C. for at least 5 minutes.
20. A condenser microphone comprising a diaphragm and a back-plate, wherein an inner surface of said diaphragm forms a capacitor in combination with an inner surface of said back-plate, said back-plate and/or said diaphragm is/are provided with a number of openings, and said inner surface of the back-plate and/or said inner surface of the diaphragm being provided with a hydrophobic layer having a contact angle for water being larger than 90°, and wherein the static distance between said diaphragm and said back-plate is smaller than 10 μm.
21. A condenser microphone comprising:
a diaphragm;
a back-plate, wherein an inner surface of said diaphragm forms a capacitor in combination with an inner surface of said back-plate, said back-plate and/or said diaphragm being provided with a number of openings, wherein the static distance between said diaphragm and said back-plate is smaller than 10 μm; and
a hydrophobic layer, provided on said inner surface of the back-plate and/or on said inner surface of the diaphragm.
22. A microelectromechanical microphone, comprising:
a diaphragm and a back-plate with an air gap therebetween, the diaphragm and a back-plate including respective inner surfaces forming a capacitor, the respective inner surfaces being made of a hydrophobic or hydrophilic materials;
a number of openings leading to the air gap; and
a hydrophobic molecular monolayer coating on the inner surface of the diaphragm or the back-plate, wherein molecules of the molecular monolayer are cross-linked and multi-bounded to the inner surface of the diaphragm or the back-plate.
23. The microelectromechanical microphone according to claim 22, wherein the multi-bounded molecular monolayer forms hydrophobic chains pointing away from the inner surface of the diaphragm or the back-plate.
24. The microelectromechanical microphone according to claim 23, wherein the hydrophobic molecular monolayer has a contact angle for water greater than 90°.
25. The microelectromechanical microphone according to claim 24, wherein the hydrophobic molecular monolayer includes a perfluoralkylsilane.
26. The microelectromechanical microphone according to claim 24, wherein the hydrophobic molecular monolayer includes an alkylsilane.
27. The microelectromechanical microphone according to claim 24, wherein the hydrophobic molecular monolayer includes a perhaloalkylsilane.
28. The microelectromechanical microphone according to claim 23, wherein the hydrophobic molecular monolayer has a contact angle for water greater than about 100°.
29. The microelectromechanical microphone according to claim 23, wherein the hydrophobic molecule monolayer is stable at temperatures up to at least 400° C. for at least 5 minutes.
30. The microelectromechanical microphone according to claim 22, wherein the molecular monolayer comprises a structured molecule monolayer.
31. The microelectromechanical microphone according to claim 22, wherein the diaphragm or the back-plate comprises respective materials including at least one of silicon, poly-silicon, silicon-oxide, silicon nitride, or silicon-rich silicon nitride.
32. The microelectromechanical microphone according to claim 22, wherein the hydrophobic molecular monolayer includes a perfluoralkylsilane, an alkylsilane or a perhaloalkylsilane.
33. The microelectromechanical microphone according to claim 22, wherein the hydrophobic molecular monolayer has a contact angle for water between 90° and 130°.
34. The microelectromechanical microphone according to claim 22, wherein the hydrophobic molecular monolayer is stable at temperatures up to at least 400° C. for at least 5 minutes.
35. The microelectromechanical microphone according to claim 22, wherein the number of openings is in the back-plate, the openings receiving the hydrophobic molecular monolayer during the coating process.
36. The microelectromechanical microphone according to claim 35, wherein the hydrophobic molecular monolayer is stable at temperatures up to at least 400° C. for at least 5 minutes and has a contact angle for water between 90° and 130°.
37. The microelectromechanical microphone according to claim 22, wherein the number of openings is in the diaphragm, the openings receiving the hydrophobic molecular monolayer during the coating process.
38. The microelectromechanical microphone according to claim 22, wherein the number of openings is in the diaphragm and in the back-plate, the openings receiving the hydrophobic molecular monolayer during the coating process.
39. The microelectromechanical microphone according to claim 22, wherein the hydrophobic molecular monolayer has a contact angle for water between 100° and 110°.
40. The microelectromechanical microphone according to claim 22, wherein the air gap has a static distance not exceeding 10 μm.
41. A microelectromechanical microphone, comprising:
a diaphragm having an inner surface;
a back-plate having an inner surface that, together with the inner surface of the diaphragm, forms a capacitor, wherein the static distance between the back-plate and the diaphragm does not exceed 10 μm; and
a hydrophobic layer on the inner surface of the diaphragm and the inner surface of the back-plate, the hydrophobic layer being deposited through a number of openings provided in at least one of (i) the back-plate, (ii) the diaphragm, or (ii) gaps at a periphery of the back-plate and the diaphragm.
42. The microelectromechanical microphone according to claim 41, wherein the hydrophobic layer is a hydrophobic molecular monolayer, wherein molecules of the molecule monolayer are cross-linked and multi-bounded to the respective inner surfaces of the diaphragm and the back-plate.
43. The microelectromechanical microphone according to claim 37, wherein the molecular monolayer comprises a structured molecular monolayer.
44. The microelectromechanical microphone according to claim 37, wherein the hydrophobic molecular monolayer has a contact angle for water greater than 90°.
45. The microelectromechanical microphone according to claim 39, wherein the hydrophobic molecule monolayer is stable at temperatures up to at least 400° C. for at least 5 minutes.
46. The microelectromechanical microphone according to claim 41, wherein the hydrophobic coating has a contact angle for water greater than 90°.
47. The microelectromechanical microphone according to claim 41, wherein the hydrophobic layer is stable at temperatures up to at least 400° C. for at least 5 minutes.
48. The microelectromechanical microphone according to claim 41, wherein the hydrophobic layer is deposited by gaseous-phase deposition onto the inner surfaces of the diaphragm and the back-plate through the number of openings.
49. The microelectromechanical microphone according to claim 41, wherein the hydrophobic layer is deposited by liquid-phase deposition onto the inner surfaces of the diaphragm and the back-plate through the number of openings.
50. The microelectromechanical microphone according to claim 41, wherein the hydrophobic layer is stable at temperatures between at least −30° C. and at least 110° C.
51. The microelectromechanical microphone according to claim 41, wherein the hydrophobic layer has a contact angle for water greater than about 100°.
52. A microelectromechanical microphone, comprising:
a diaphragm and a back-plate defining an air gap between respective inner surfaces thereof, the respective inner surfaces forming a capacitor, the static distance between the diaphragm and the back-plate not exceeding 10 μm;
a number of openings leading to the air gap; and
a hydrophobic layer deposited through the number of openings into the air gap to form a structured monolayer on at least one of the inner surface of the diaphragm or the inner surface of the back-plate.
53. The microelectromechanical microphone of claim 52, wherein the diaphragm includes the number of openings.
54. The microelectromechanical microphone of claim 52, wherein the back-plate includes the number of openings.
55. The microelectromechanical microphone of claim 52, wherein the back-plate and the diaphragm includes the number of openings.
56. The microelectromechanical microphone according to claim 55, wherein the hydrophobic layer is deposited by gaseous-phase or liquid-phase deposition onto the inner surfaces of the diaphragm and the back-plate through the number of openings.
57. The microelectromechanical microphone of claim 52, wherein the number of openings correspond to gaps at the periphery of the back-plate and the diaphragm.
58. The microelectromechanical microphone of claim 52, wherein the number of openings are positioned between the diaphragm and the back-plate.
59. The microelectromechanical microphone according to claim 58, wherein the hydrophobic layer has a contact angle for water greater than about 100°.
60. The microelectromechanical microphone of claim 52, wherein the hydrophobic layer is a hydrophobic molecular monolayer, wherein molecules of the molecular monolayer are cross-linked and multi-bounded to the respective inner surfaces of the diaphragm and the back-plate.
61. The microelectromechanical microphone according to claim 60, wherein the molecule monolayer comprises a structured molecule monolayer.
62. The microelectromechanical microphone according to claim 61, wherein the hydrophobic molecular monolayer has a contact angle for water greater than 90°.
63. The microelectromechanical microphone according to claim 62, wherein the hydrophobic molecular monolayer is stable at temperatures between at least −30° C. and at least 110° C.
64. The microelectromechanical microphone according to claim 52, wherein the hydrophobic layer is stable at temperatures up to at least 400° C. for at least 5 minutes.
65. The microelectromechanical microphone according to claim 52, wherein the hydrophobic layer is deposited by gaseous-phase deposition onto the inner surfaces of the diaphragm and the back-plate through the number of openings.
66. The microelectromechanical microphone according to claim 52, wherein the hydrophobic layer is deposited by liquid-phase deposition onto the inner surfaces of the diaphragm and the back-plate through the number of openings.
67. The microelectromechanical microphone according to claim 52, wherein the hydrophobic layer is stable at temperatures between at least −30° C. and at least 110° C.
68. A condenser microphone comprising a diaphragm and a back-plate, wherein an inner surface of said diaphragm forms a capacitor in combination with an inner surface of said back-plate, a number of openings being provided in at least one of (i) said back-plate, (ii) said diaphragm, or (ii) gaps at a periphery of said back-plate and said diaphragm, and said inner surface of the back-plate and/or said inner surface of the diaphragm being provided with a hydrophobic layer having a contact angle for water being larger than 90°, and wherein the static distance between said diaphragm and said back-plate is smaller than 10 μm.
69. The condenser microphone according to claim 1, wherein said inner surface of the back-plate and said inner surface of the diaphragm is provided with said hydrophobic layer by depositing said hydrophobic layer through the number of openings.
70. The condenser microphone according to claim 1, wherein said hydrophobic layer is a hydrophobic molecular monolayer, and wherein molecules of said molecular monolayer are cross-linked and multi-bounded to the inner surface of at least one of said diaphragm or said back-plate.
71. The condenser microphone according to claim 70, wherein the multi-bounded molecular monolayer forms hydrophobic chains pointing away from the inner surface of the diaphragm or the back-plate.
72. The condenser microphone according to claim 20, wherein said hydrophobic layer is a hydrophobic molecular monolayer, and wherein molecules of said molecular monolayer are cross-linked and multi-bounded to the inner surface of at least one of said diaphragm or said back-plate.
73. The condenser microphone according to claim 21, wherein said hydrophobic layer is a hydrophobic molecular monolayer, and wherein molecules of said molecular monolayer are cross-linked and multi-bounded to the inner surface of at least one of said diaphragm or said back-plate.
US11/502,577 2001-05-31 2006-08-10 Method of providing a hydrophobic layer and condenser microphone having such a layer Expired - Lifetime USRE40781E1 (en)

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Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090067659A1 (en) * 2007-09-12 2009-03-12 Christian Wang Miniature microphone assembly with hydrophobic surface coating
US20090146527A1 (en) * 2007-12-07 2009-06-11 Electronics And Telecommunications Research Institute Piezoelectric microspeaker using microelectromechanical systems and method of manufacturing the same
US20100107758A1 (en) * 2007-01-19 2010-05-06 Canon Kabushiki Kaisha Structural member having a plurality of conductive regions
US20110006381A1 (en) * 2007-12-07 2011-01-13 Epcos Ag Mems package and method for the production thereof
US20110158439A1 (en) * 2009-12-31 2011-06-30 Texas Instruments Incorporated Silicon Microphone Transducer
US20120033832A1 (en) * 2009-03-09 2012-02-09 Nxp B.V. Microphone and accelerometer
US20120308053A1 (en) * 2011-06-01 2012-12-06 Infineon Technologies Ag Plate, Transducer and Methods for Making and Operating a Transducer
US8617934B1 (en) 2000-11-28 2013-12-31 Knowles Electronics, Llc Methods of manufacture of top port multi-part surface mount silicon condenser microphone packages
US8624387B1 (en) 2000-11-28 2014-01-07 Knowles Electronics, Llc Top port multi-part surface mount silicon condenser microphone package
US20140015070A1 (en) * 2012-07-11 2014-01-16 Robert Bosch Gmbh Component having a micromechanical microphone pattern
US9056760B2 (en) 2010-01-29 2015-06-16 Epcos Ag Miniaturized electrical component comprising an MEMS and an ASIC and production method
US9078063B2 (en) 2012-08-10 2015-07-07 Knowles Electronics, Llc Microphone assembly with barrier to prevent contaminant infiltration
US9374643B2 (en) 2011-11-04 2016-06-21 Knowles Electronics, Llc Embedded dielectric as a barrier in an acoustic device and method of manufacture
US9487386B2 (en) 2013-01-16 2016-11-08 Infineon Technologies Ag Comb MEMS device and method of making a comb MEMS device
US9794661B2 (en) 2015-08-07 2017-10-17 Knowles Electronics, Llc Ingress protection for reducing particle infiltration into acoustic chamber of a MEMS microphone package

Families Citing this family (135)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7045459B2 (en) * 2002-02-19 2006-05-16 Northrop Grumman Corporation Thin film encapsulation of MEMS devices
DE10219679A1 (en) * 2002-05-02 2003-11-20 Audio Service Gmbh As Hearing aid or hearing aid parts for use in the ear canal and / or auricle of a wearer
DE10260304B3 (en) 2002-12-20 2004-07-08 Siemens Audiologische Technik Gmbh Hearing aid system with side-specific hearing aid devices that can be worn behind the ears
DE10260307B4 (en) 2002-12-20 2007-02-22 Siemens Audiologische Technik Gmbh Electroacoustic miniature transducer for a hearing aid
JP2004356708A (en) * 2003-05-27 2004-12-16 Hosiden Corp Sound detection mechanism and manufacturing method thereof
US6806993B1 (en) * 2003-06-04 2004-10-19 Texas Instruments Incorporated Method for lubricating MEMS components
JP4181580B2 (en) * 2003-11-20 2008-11-19 松下電器産業株式会社 Electret and electret condenser
US7706554B2 (en) * 2004-03-03 2010-04-27 Panasonic Corporation Electret condenser
US7853027B2 (en) * 2004-03-05 2010-12-14 Panasonic Corporation Electret condenser
DE102004022178B4 (en) * 2004-05-05 2008-03-20 Atmel Germany Gmbh Method for producing a conductor track on a substrate and component with a conductor track produced in this way
EP1599067B1 (en) 2004-05-21 2013-05-01 Epcos Pte Ltd Detection and control of diaphragm collapse in condenser microphones
US7795695B2 (en) 2005-01-27 2010-09-14 Analog Devices, Inc. Integrated microphone
JP4559250B2 (en) * 2005-02-16 2010-10-06 シチズンファインテックミヨタ株式会社 Actuator and manufacturing method thereof
KR100638057B1 (en) * 2005-02-21 2006-10-24 주식회사 비에스이 Double Diaphragm Micro speaker
US7825484B2 (en) 2005-04-25 2010-11-02 Analog Devices, Inc. Micromachined microphone and multisensor and method for producing same
US7885423B2 (en) * 2005-04-25 2011-02-08 Analog Devices, Inc. Support apparatus for microphone diaphragm
US20070071268A1 (en) * 2005-08-16 2007-03-29 Analog Devices, Inc. Packaged microphone with electrically coupled lid
US7449356B2 (en) * 2005-04-25 2008-11-11 Analog Devices, Inc. Process of forming a microphone using support member
JP2007013509A (en) * 2005-06-30 2007-01-18 Sanyo Electric Co Ltd Acoustic sensor and diaphragm
US20070003081A1 (en) * 2005-06-30 2007-01-04 Insound Medical, Inc. Moisture resistant microphone
WO2007015593A1 (en) * 2005-08-02 2007-02-08 Bse Co., Ltd Silicon based condenser microphone and packaging method for the same
KR100675027B1 (en) * 2005-08-10 2007-01-30 주식회사 비에스이 Silicon based condenser microphone and mounting method for the same
US20070040231A1 (en) * 2005-08-16 2007-02-22 Harney Kieran P Partially etched leadframe packages having different top and bottom topologies
KR100675025B1 (en) * 2005-08-20 2007-01-29 주식회사 비에스이 Silicon based condenser microphone
KR100644730B1 (en) * 2005-08-20 2006-11-10 주식회사 비에스이 Silicon based condenser microphone
US8351632B2 (en) * 2005-08-23 2013-01-08 Analog Devices, Inc. Noise mitigating microphone system and method
US7961897B2 (en) * 2005-08-23 2011-06-14 Analog Devices, Inc. Microphone with irregular diaphragm
US8477983B2 (en) * 2005-08-23 2013-07-02 Analog Devices, Inc. Multi-microphone system
KR100737405B1 (en) 2006-01-05 2007-07-09 한국표준과학연구원 Manufacturing method of micromachined silicon condenser microphone
US8344487B2 (en) * 2006-06-29 2013-01-01 Analog Devices, Inc. Stress mitigation in packaged microchips
JP4951067B2 (en) * 2006-07-25 2012-06-13 アナログ デバイシス, インコーポレイテッド Multiple microphone systems
CA2661144C (en) * 2006-08-31 2013-08-06 Widex A/S Filter for a hearing aid and a hearing aid
US8165323B2 (en) * 2006-11-28 2012-04-24 Zhou Tiansheng Monolithic capacitive transducer
TW200847827A (en) * 2006-11-30 2008-12-01 Analog Devices Inc Microphone system with silicon microphone secured to package lid
CA2674136A1 (en) * 2007-01-03 2008-07-10 Widex A/S A component for a hearing aid and a method of making a component for a hearing aid
US20080192962A1 (en) 2007-02-13 2008-08-14 Sonion Nederland B.V. Microphone with dual transducers
US7694610B2 (en) * 2007-06-27 2010-04-13 Siemens Medical Solutions Usa, Inc. Photo-multiplier tube removal tool
JP2009038732A (en) * 2007-08-03 2009-02-19 Panasonic Corp Electronic component and manufacturing method thereof, and electronic device provided with electronic component
US8135163B2 (en) * 2007-08-30 2012-03-13 Klipsch Group, Inc. Balanced armature with acoustic low pass filter
US20090087010A1 (en) * 2007-09-27 2009-04-02 Mark Vandermeulen Carrier chip with cavity
US8208671B2 (en) * 2008-01-16 2012-06-26 Analog Devices, Inc. Microphone with backside cavity that impedes bubble formation
JP4366666B1 (en) * 2008-09-12 2009-11-18 オムロン株式会社 Semiconductor device
US7892937B2 (en) 2008-10-16 2011-02-22 Micron Technology, Inc. Methods of forming capacitors
US8238018B2 (en) 2009-06-01 2012-08-07 Zhou Tiansheng MEMS micromirror and micromirror array
US8507306B2 (en) * 2009-09-28 2013-08-13 Analog Devices, Inc. Reduced stiction MEMS device with exposed silicon carbide
DE102010008044B4 (en) * 2010-02-16 2016-11-24 Epcos Ag MEMS microphone and method of manufacture
US10551613B2 (en) 2010-10-20 2020-02-04 Tiansheng ZHOU Micro-electro-mechanical systems micromirrors and micromirror arrays
US9036231B2 (en) 2010-10-20 2015-05-19 Tiansheng ZHOU Micro-electro-mechanical systems micromirrors and micromirror arrays
US8575037B2 (en) 2010-12-27 2013-11-05 Infineon Technologies Ag Method for fabricating a cavity structure, for fabricating a cavity structure for a semiconductor structure and a semiconductor microphone fabricated by the same
US9181087B2 (en) * 2011-03-02 2015-11-10 Epcos Ag Flat back plate
US9357287B2 (en) 2011-07-07 2016-05-31 Sonion Nederland B.V. Multiple receiver assembly and a method for assembly thereof
US8980387B2 (en) 2011-10-27 2015-03-17 General Electric Company Method of coating a surface and article incorporating coated surface
US8995690B2 (en) * 2011-11-28 2015-03-31 Infineon Technologies Ag Microphone and method for calibrating a microphone
US9045328B2 (en) 2011-12-20 2015-06-02 Analog Devices, Inc. Method for wafer-level surface micromachining to reduce stiction
US9385634B2 (en) 2012-01-26 2016-07-05 Tiansheng ZHOU Rotational type of MEMS electrostatic actuator
US9029179B2 (en) 2012-06-28 2015-05-12 Analog Devices, Inc. MEMS device with improved charge elimination and methods of producing same
ITTO20120753A1 (en) * 2012-08-30 2014-03-01 St Microelectronics Srl ENCAPSULATED DEVICE EXPOSED TO AIR, ENVIRONMENT AND LIQUIDS AND RELATIVE PROCESS OF MANUFACTURE
US9247359B2 (en) 2012-10-18 2016-01-26 Sonion Nederland Bv Transducer, a hearing aid comprising the transducer and a method of operating the transducer
US9066187B2 (en) 2012-10-18 2015-06-23 Sonion Nederland Bv Dual transducer with shared diaphragm
US9807525B2 (en) 2012-12-21 2017-10-31 Sonion Nederland B.V. RIC assembly with thuras tube
DK2750413T3 (en) 2012-12-28 2017-05-22 Sonion Nederland Bv Hearing aid
US9676614B2 (en) 2013-02-01 2017-06-13 Analog Devices, Inc. MEMS device with stress relief structures
US9401575B2 (en) 2013-05-29 2016-07-26 Sonion Nederland Bv Method of assembling a transducer assembly
EP2849463B1 (en) 2013-09-16 2018-04-04 Sonion Nederland B.V. A transducer comprising moisture transporting element
DK3550852T3 (en) 2014-02-14 2021-02-01 Sonion Nederland Bv A joiner for a receiver assembly
US10021498B2 (en) 2014-02-18 2018-07-10 Sonion A/S Method of manufacturing assemblies for hearing aids
DK2914018T3 (en) 2014-02-26 2017-01-30 Sonion Nederland Bv Speaker, luminaire and method
DK2928207T3 (en) 2014-04-02 2018-09-17 Sonion Nederland Bv Curved luminaire transducer
TWI477159B (en) * 2014-05-27 2015-03-11 Cotron Corp Vibrating element
EP2953380A1 (en) 2014-06-04 2015-12-09 Sonion Nederland B.V. Acoustical crosstalk compensation
DE102014108740B4 (en) * 2014-06-23 2016-03-03 Epcos Ag MEMS microphone with improved sensitivity and method of manufacture
DE102014217152A1 (en) * 2014-08-28 2016-03-03 Robert Bosch Gmbh MEMS component
US10167189B2 (en) 2014-09-30 2019-01-01 Analog Devices, Inc. Stress isolation platform for MEMS devices
DK3041263T3 (en) 2014-12-30 2022-04-11 Sonion Nederland Bv Hybrid receiver module
US10009693B2 (en) 2015-01-30 2018-06-26 Sonion Nederland B.V. Receiver having a suspended motor assembly
DK3057339T3 (en) 2015-02-10 2021-01-04 Sonion Nederland Bv Microphone module with common middle audio input device
DK3073764T3 (en) 2015-03-25 2021-05-10 Sonion Nederland Bv A hearing aid comprising an insert member
EP3073765B1 (en) 2015-03-25 2022-08-17 Sonion Nederland B.V. A receiver-in-canal assembly comprising a diaphragm and a cable connection
EP3133829B1 (en) 2015-08-19 2020-04-08 Sonion Nederland B.V. Receiver unit with enhanced frequency response
EP3139627B1 (en) 2015-09-02 2019-02-13 Sonion Nederland B.V. Ear phone with multi-way speakers
US10131538B2 (en) 2015-09-14 2018-11-20 Analog Devices, Inc. Mechanically isolated MEMS device
US9668065B2 (en) 2015-09-18 2017-05-30 Sonion Nederland B.V. Acoustical module with acoustical filter
EP3157270B1 (en) 2015-10-14 2021-03-31 Sonion Nederland B.V. Hearing device with vibration sensitive transducer
DK3160157T3 (en) 2015-10-21 2018-12-17 Sonion Nederland Bv Vibration-compensated vibroacoustic device
US10582303B2 (en) 2015-12-04 2020-03-03 Sonion Nederland B.V. Balanced armature receiver with bi-stable balanced armature
DK3468231T3 (en) 2015-12-21 2022-08-29 Sonion Nederland Bv RECEIVER ASSEMBLY HAVING A DISTINCT LONGITUDINAL DIRECTION
US9718677B1 (en) * 2016-01-19 2017-08-01 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and manufacturing method thereof
US9866959B2 (en) 2016-01-25 2018-01-09 Sonion Nederland B.V. Self-biasing output booster amplifier and use thereof
EP3200479A3 (en) 2016-01-28 2017-08-30 Sonion Nederland B.V. An assembly comprising an electrostatic sound generator and a transformer
DK3232685T3 (en) 2016-04-13 2021-04-19 Sonion Nederland Bv A dome for a personal audio device
EP3252444B1 (en) 2016-06-01 2023-12-20 Sonion Nederland B.V. Vibration or acceleration sensor applying squeeze film damping
DK3279621T5 (en) 2016-08-26 2021-05-31 Sonion Nederland Bv VIBRATION SENSOR WITH LOW FREQUENCY ROLL-OFF RESPONSE CURVE
EP3826326A1 (en) 2016-09-12 2021-05-26 Sonion Nederland B.V. Receiver with integrated membrane movement detection
EP3313097B1 (en) 2016-10-19 2020-08-26 Sonion Nederland B.V. An ear bud or dome
EP3324538A1 (en) 2016-11-18 2018-05-23 Sonion Nederland B.V. A sensing circuit comprising an amplifying circuit
US10327072B2 (en) 2016-11-18 2019-06-18 Sonion Nederland B.V. Phase correcting system and a phase correctable transducer system
US20180145643A1 (en) 2016-11-18 2018-05-24 Sonion Nederland B.V. Circuit for providing a high and a low impedance and a system comprising the circuit
EP3324649A1 (en) 2016-11-18 2018-05-23 Sonion Nederland B.V. A transducer with a high sensitivity
US10516947B2 (en) 2016-12-14 2019-12-24 Sonion Nederland B.V. Armature and a transducer comprising the armature
EP3337191B1 (en) 2016-12-16 2021-05-19 Sonion Nederland B.V. A receiver assembly
EP3337192B1 (en) 2016-12-16 2021-04-14 Sonion Nederland B.V. A receiver assembly
US10699833B2 (en) 2016-12-28 2020-06-30 Sonion Nederland B.V. Magnet assembly
DK3343956T3 (en) 2016-12-30 2021-05-03 Sonion Nederland Bv A circuit and a receiver comprising the circuit
EP3702322A1 (en) 2016-12-30 2020-09-02 Sonion Nederland B.V. Micro-electromechanical transducer
DE102017102190B4 (en) * 2017-02-03 2020-06-04 Infineon Technologies Ag Membrane components and method for forming a membrane component
US10231061B2 (en) 2017-04-28 2019-03-12 Infineon Technologies Ag Sound transducer with housing and MEMS structure
EP3407625B1 (en) 2017-05-26 2021-05-05 Sonion Nederland B.V. Receiver with venting opening
EP3407626B1 (en) 2017-05-26 2020-06-24 Sonion Nederland B.V. A receiver assembly comprising an armature and a diaphragm
DK3429231T3 (en) 2017-07-13 2023-04-11 Sonion Nederland Bv Hearing device including vibration prevention device
US10820104B2 (en) 2017-08-31 2020-10-27 Sonion Nederland B.V. Diaphragm, a sound generator, a hearing device and a method
DK3451688T3 (en) 2017-09-04 2021-06-21 Sonion Nederland Bv SOUND GENERATOR, SCREEN AND SPOUT
GB201714956D0 (en) 2017-09-18 2017-11-01 Sonova Ag Hearing device with adjustable venting
US10805746B2 (en) 2017-10-16 2020-10-13 Sonion Nederland B.V. Valve, a transducer comprising a valve, a hearing device and a method
DK3471433T3 (en) 2017-10-16 2022-11-28 Sonion Nederland Bv A PERSONAL HEARING DEVICE
US10869119B2 (en) 2017-10-16 2020-12-15 Sonion Nederland B.V. Sound channel element with a valve and a transducer with the sound channel element
EP3567873B1 (en) 2018-02-06 2021-08-18 Sonion Nederland B.V. Method for controlling an acoustic valve of a hearing device
EP3531713B1 (en) 2018-02-26 2022-11-02 Sonion Nederland B.V. Miniature speaker with acoustical mass
EP3531720B1 (en) 2018-02-26 2021-09-15 Sonion Nederland B.V. An assembly of a receiver and a microphone
EP3995795A1 (en) 2018-04-30 2022-05-11 Sonion Nederland B.V. Vibration sensor
DK3579578T3 (en) 2018-06-07 2022-05-02 Sonion Nederland Bv MINIATURE ANNOUNCER
DE102018211332A1 (en) 2018-07-10 2020-01-16 Robert Bosch Gmbh Process for producing a MEMS sensor and MEMS sensor
US10951169B2 (en) 2018-07-20 2021-03-16 Sonion Nederland B.V. Amplifier comprising two parallel coupled amplifier units
US10848864B2 (en) * 2018-09-07 2020-11-24 Apple Inc. Liquid-resistant modules, acoustic transducers and electronic devices
CN110902642A (en) 2018-09-17 2020-03-24 新科实业有限公司 MEMS package and method of manufacturing the same
EP3627856B1 (en) 2018-09-19 2023-10-25 Sonion Nederland B.V. A housing comprising a sensor
DE112019004979T5 (en) 2018-10-05 2021-06-17 Knowles Electronics, Llc Process for making MEMS membranes comprising corrugations
WO2020072920A1 (en) * 2018-10-05 2020-04-09 Knowles Electronics, Llc Microphone device with ingress protection
EP4300995A3 (en) 2018-12-19 2024-04-03 Sonion Nederland B.V. Miniature speaker with multiple sound cavities
EP3675522A1 (en) 2018-12-28 2020-07-01 Sonion Nederland B.V. Miniature speaker with essentially no acoustical leakage
US11190880B2 (en) 2018-12-28 2021-11-30 Sonion Nederland B.V. Diaphragm assembly, a transducer, a microphone, and a method of manufacture
EP3726855B1 (en) 2019-04-15 2021-09-01 Sonion Nederland B.V. A personal hearing device with a vent channel and acoustic separation
US11317199B2 (en) 2019-05-28 2022-04-26 Apple Inc. Vented acoustic transducers, and related methods and systems
US11310591B2 (en) 2019-05-28 2022-04-19 Apple Inc. Vented acoustic transducers, and related methods and systems
US11417611B2 (en) 2020-02-25 2022-08-16 Analog Devices International Unlimited Company Devices and methods for reducing stress on circuit components
US20220353621A1 (en) * 2021-04-29 2022-11-03 Aac Acoustic Technologies (Shenzhen) Co., Ltd. Silicon microphone

Citations (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3963881A (en) 1973-05-29 1976-06-15 Thermo Electron Corporation Unidirectional condenser microphone
US4508613A (en) 1983-12-19 1985-04-02 Gould Inc. Miniaturized potassium ion sensor
US4746898A (en) 1986-10-20 1988-05-24 Gould Inc. Bi-phase decoder
US4760250A (en) 1986-09-29 1988-07-26 Spectramed, Inc. Optoelectronics system for measuring environmental properties having plural feedback detectors
WO1989003125A1 (en) 1987-09-22 1989-04-06 Ib Johannsen A process for producing an electric circuit including josephson diodes
US4910840A (en) 1987-10-30 1990-03-27 Microtel, B.V. Electroacoustic transducer of the so-called "electret" type, and a method of making such a transducer
US5178015A (en) 1991-07-22 1993-01-12 Monolithic Sensors Inc. Silicon-on-silicon differential input sensors
WO1993004495A1 (en) 1991-08-13 1993-03-04 Siemens Aktiengesellschaft Electret feature, method of producing it, and its use in an electro-acoustic transducer
US5208789A (en) 1992-04-13 1993-05-04 Lectret S. A. Condenser microphones based on silicon with humidity resistant surface treatment
EP0561566A2 (en) 1992-03-18 1993-09-22 Knowles Electronics, Inc. Solid state condenser and microphone
US5367429A (en) 1991-10-18 1994-11-22 Hitachi, Ltd Electrostatic type micro transducer and control system using the same
US5446413A (en) 1994-05-20 1995-08-29 Knowles Electronics, Inc. Impedance circuit for a miniature hearing aid
US5490220A (en) 1992-03-18 1996-02-06 Knowles Electronics, Inc. Solid state condenser and microphone devices
US5658698A (en) 1994-01-31 1997-08-19 Canon Kabushiki Kaisha Microstructure, process for manufacturing thereof and devices incorporating the same
US5708123A (en) 1993-06-11 1998-01-13 Nkt Research Center A/S Electroactive materials, a process for their preparation as well as the use thereof
US5740261A (en) 1996-11-21 1998-04-14 Knowles Electronics, Inc. Miniature silicon condenser microphone
WO1998018855A1 (en) 1996-10-25 1998-05-07 Blue River International, L.L.C. Silicon coating compositions and uses thereof
EP0849082A2 (en) 1996-12-20 1998-06-24 Seiko Epson Corporation Electrostatic actuator and method of manufacturing it
US5812496A (en) 1997-10-20 1998-09-22 Peck/Pelissier Partnership Water resistant microphone
US5822170A (en) 1997-10-09 1998-10-13 Honeywell Inc. Hydrophobic coating for reducing humidity effect in electrostatic actuators
US5870482A (en) 1997-02-25 1999-02-09 Knowles Electronics, Inc. Miniature silicon condenser microphone
EP0899093A2 (en) 1997-08-29 1999-03-03 Toyo Ink Manufacturing Co., Ltd. Method and coating agent for electrocoagulation printing
US5889872A (en) 1996-07-02 1999-03-30 Motorola, Inc. Capacitive microphone and method therefor
US6012021A (en) 1997-02-28 2000-01-04 Microtronic A/S Microelectric position sensor
US6012335A (en) 1996-05-02 2000-01-11 National Semiconductor Corporation High sensitivity micro-machined pressure sensors and acoustic transducers
US6088463A (en) 1998-10-30 2000-07-11 Microtronic A/S Solid state silicon-based condenser microphone
WO2000046278A1 (en) 1999-02-01 2000-08-10 Forskningscenter Risø Composite capable of rapid volume change
US6134333A (en) 1998-03-17 2000-10-17 Sonic Innovations, Inc. Disposable oleophobic and hydrophobic barrier for a hearing aid
WO2000062580A1 (en) 1999-04-12 2000-10-19 Knowles Electronics, Llc Package for micromachined silicon condenser microphone
WO2000067526A2 (en) 1999-04-30 2000-11-09 Knowles Electronics, Llc. Audio processor with ultrasonic control
EP1052880A2 (en) 1998-10-07 2000-11-15 Knowles Electronics, LLC Digital hearing aid microphone
WO2001014248A2 (en) 1999-08-24 2001-03-01 Knowles Electronics, Llc Assembly process for delicate silicon structures
CA2383740A1 (en) 1999-09-06 2001-03-15 Microtronic A/S Silicon-based sensor system
CA2383901A1 (en) 1999-09-06 2001-03-15 Peter U. Scheel A pressure transducer
WO2001026136A2 (en) 1999-10-05 2001-04-12 Delta Danish Electronics, Light & Acoustics Encapsulation for a three-dimensional microsystem
US6225140B1 (en) 1998-10-13 2001-05-01 Institute Of Microelectronics CMOS compatable surface machined pressure sensor and method of fabricating the same
US6293148B1 (en) 1999-04-30 2001-09-25 Institute Of Microelectronics Structural design for improving the sensitivity of a surface-micromachined vibratory gyroscope
WO2002015636A2 (en) 2000-08-11 2002-02-21 Knowles Electronics, Llc Miniature broadband transducer
US20020031234A1 (en) 2000-06-28 2002-03-14 Wenger Matthew P. Microphone system for in-car audio pickup
US20020064292A1 (en) 2000-09-29 2002-05-30 Pirmin Rombach Micromachined magnetically balanced membrane actuator
WO2002052894A1 (en) 2000-12-22 2002-07-04 Brüel & Kjær Sound & Vibration Measurement A/S A micromachined capacitive transducer
WO2002052893A1 (en) 2000-12-22 2002-07-04 Brüel & Kjær Sound & Vibration Measurement A/S A highly stable micromachined capacitive transducer
US6512833B2 (en) 2000-09-21 2003-01-28 Matsushita Electric Industrial Co., Ltd. Electret condenser microphone and method of producing same
US6522762B1 (en) 1999-09-07 2003-02-18 Microtronic A/S Silicon-based sensor system
US6535460B2 (en) 2000-08-11 2003-03-18 Knowles Electronics, Llc Miniature broadband acoustic transducer
US6552469B1 (en) 1998-06-05 2003-04-22 Knowles Electronics, Llc Solid state transducer for converting between an electrical signal and sound
US6578427B1 (en) 1999-06-15 2003-06-17 Envec Mess- Und Regeltechnik Gmbh + Co. Capacitive ceramic relative-pressure sensor
US6622368B1 (en) 1998-06-11 2003-09-23 Sonionmems A/S Method of manufacturing a transducer having a diaphragm with a predetermined tension
US6732588B1 (en) 1999-09-07 2004-05-11 Sonionmems A/S Pressure transducer
US6829131B1 (en) 1999-09-13 2004-12-07 Carnegie Mellon University MEMS digital-to-acoustic transducer with error cancellation
US6847090B2 (en) 2001-01-24 2005-01-25 Knowles Electronics, Llc Silicon capacitive microphone

Patent Citations (60)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3963881A (en) 1973-05-29 1976-06-15 Thermo Electron Corporation Unidirectional condenser microphone
US4508613A (en) 1983-12-19 1985-04-02 Gould Inc. Miniaturized potassium ion sensor
US4760250A (en) 1986-09-29 1988-07-26 Spectramed, Inc. Optoelectronics system for measuring environmental properties having plural feedback detectors
US4746898A (en) 1986-10-20 1988-05-24 Gould Inc. Bi-phase decoder
WO1989003125A1 (en) 1987-09-22 1989-04-06 Ib Johannsen A process for producing an electric circuit including josephson diodes
US4910840A (en) 1987-10-30 1990-03-27 Microtel, B.V. Electroacoustic transducer of the so-called "electret" type, and a method of making such a transducer
US5178015A (en) 1991-07-22 1993-01-12 Monolithic Sensors Inc. Silicon-on-silicon differential input sensors
WO1993004495A1 (en) 1991-08-13 1993-03-04 Siemens Aktiengesellschaft Electret feature, method of producing it, and its use in an electro-acoustic transducer
US5367429A (en) 1991-10-18 1994-11-22 Hitachi, Ltd Electrostatic type micro transducer and control system using the same
US5490220A (en) 1992-03-18 1996-02-06 Knowles Electronics, Inc. Solid state condenser and microphone devices
EP0561566A2 (en) 1992-03-18 1993-09-22 Knowles Electronics, Inc. Solid state condenser and microphone
US5208789A (en) 1992-04-13 1993-05-04 Lectret S. A. Condenser microphones based on silicon with humidity resistant surface treatment
US5708123A (en) 1993-06-11 1998-01-13 Nkt Research Center A/S Electroactive materials, a process for their preparation as well as the use thereof
US5658698A (en) 1994-01-31 1997-08-19 Canon Kabushiki Kaisha Microstructure, process for manufacturing thereof and devices incorporating the same
US5446413A (en) 1994-05-20 1995-08-29 Knowles Electronics, Inc. Impedance circuit for a miniature hearing aid
US5861779A (en) 1994-05-20 1999-01-19 Knowles Electronics, Inc. Impedance circuit for a miniature hearing aid
US6012335A (en) 1996-05-02 2000-01-11 National Semiconductor Corporation High sensitivity micro-machined pressure sensors and acoustic transducers
US5889872A (en) 1996-07-02 1999-03-30 Motorola, Inc. Capacitive microphone and method therefor
WO1998018855A1 (en) 1996-10-25 1998-05-07 Blue River International, L.L.C. Silicon coating compositions and uses thereof
US5740261A (en) 1996-11-21 1998-04-14 Knowles Electronics, Inc. Miniature silicon condenser microphone
EP0849082A2 (en) 1996-12-20 1998-06-24 Seiko Epson Corporation Electrostatic actuator and method of manufacturing it
US20010000329A1 (en) 1996-12-20 2001-04-19 Kazuhiko Sato Electrostatic actuator and manufacturing method therefor
US6410107B2 (en) 1996-12-20 2002-06-25 Seiko Epson Corporation Methods for manufacturing an electrostatic actuator
US5870482A (en) 1997-02-25 1999-02-09 Knowles Electronics, Inc. Miniature silicon condenser microphone
US6012021A (en) 1997-02-28 2000-01-04 Microtronic A/S Microelectric position sensor
EP0899093A2 (en) 1997-08-29 1999-03-03 Toyo Ink Manufacturing Co., Ltd. Method and coating agent for electrocoagulation printing
US5822170A (en) 1997-10-09 1998-10-13 Honeywell Inc. Hydrophobic coating for reducing humidity effect in electrostatic actuators
US5812496A (en) 1997-10-20 1998-09-22 Peck/Pelissier Partnership Water resistant microphone
US6134333A (en) 1998-03-17 2000-10-17 Sonic Innovations, Inc. Disposable oleophobic and hydrophobic barrier for a hearing aid
US6552469B1 (en) 1998-06-05 2003-04-22 Knowles Electronics, Llc Solid state transducer for converting between an electrical signal and sound
US6622368B1 (en) 1998-06-11 2003-09-23 Sonionmems A/S Method of manufacturing a transducer having a diaphragm with a predetermined tension
EP1052880A2 (en) 1998-10-07 2000-11-15 Knowles Electronics, LLC Digital hearing aid microphone
US6225140B1 (en) 1998-10-13 2001-05-01 Institute Of Microelectronics CMOS compatable surface machined pressure sensor and method of fabricating the same
US6088463A (en) 1998-10-30 2000-07-11 Microtronic A/S Solid state silicon-based condenser microphone
WO2000046278A1 (en) 1999-02-01 2000-08-10 Forskningscenter Risø Composite capable of rapid volume change
WO2000062580A1 (en) 1999-04-12 2000-10-19 Knowles Electronics, Llc Package for micromachined silicon condenser microphone
US6293148B1 (en) 1999-04-30 2001-09-25 Institute Of Microelectronics Structural design for improving the sensitivity of a surface-micromachined vibratory gyroscope
WO2000067526A2 (en) 1999-04-30 2000-11-09 Knowles Electronics, Llc. Audio processor with ultrasonic control
US6578427B1 (en) 1999-06-15 2003-06-17 Envec Mess- Und Regeltechnik Gmbh + Co. Capacitive ceramic relative-pressure sensor
WO2001014248A2 (en) 1999-08-24 2001-03-01 Knowles Electronics, Llc Assembly process for delicate silicon structures
CA2383740A1 (en) 1999-09-06 2001-03-15 Microtronic A/S Silicon-based sensor system
CA2383901A1 (en) 1999-09-06 2001-03-15 Peter U. Scheel A pressure transducer
US6732588B1 (en) 1999-09-07 2004-05-11 Sonionmems A/S Pressure transducer
US6522762B1 (en) 1999-09-07 2003-02-18 Microtronic A/S Silicon-based sensor system
US20030128854A1 (en) 1999-09-07 2003-07-10 Matthias Mullenborn Surface mountable transducer system
US6829131B1 (en) 1999-09-13 2004-12-07 Carnegie Mellon University MEMS digital-to-acoustic transducer with error cancellation
WO2001026136A2 (en) 1999-10-05 2001-04-12 Delta Danish Electronics, Light & Acoustics Encapsulation for a three-dimensional microsystem
US20020031234A1 (en) 2000-06-28 2002-03-14 Wenger Matthew P. Microphone system for in-car audio pickup
US6535460B2 (en) 2000-08-11 2003-03-18 Knowles Electronics, Llc Miniature broadband acoustic transducer
WO2002015636A2 (en) 2000-08-11 2002-02-21 Knowles Electronics, Llc Miniature broadband transducer
EP1469701A2 (en) 2000-08-11 2004-10-20 Knowles Electronics, LLC Raised microstructures
US6512833B2 (en) 2000-09-21 2003-01-28 Matsushita Electric Industrial Co., Ltd. Electret condenser microphone and method of producing same
US20020064292A1 (en) 2000-09-29 2002-05-30 Pirmin Rombach Micromachined magnetically balanced membrane actuator
US20030034536A1 (en) 2000-12-22 2003-02-20 Bruel & Kjaer Sound & Vibration Measurement A/S Micromachined capacitive electrical component
WO2002052894A1 (en) 2000-12-22 2002-07-04 Brüel & Kjær Sound & Vibration Measurement A/S A micromachined capacitive transducer
US20030021432A1 (en) 2000-12-22 2003-01-30 Bruel & Kjaer Sound & Vibration Measurement A/S Micromachined capacitive component with high stability
US6788795B2 (en) 2000-12-22 2004-09-07 Brüel & Kjaer Sound & Vibration Measurement A/S Micromachined capacitive component with high stability
US6812620B2 (en) 2000-12-22 2004-11-02 Bruel & Kjaer Sound & Vibration Measurement A/S Micromachined capacitive electrical component
WO2002052893A1 (en) 2000-12-22 2002-07-04 Brüel & Kjær Sound & Vibration Measurement A/S A highly stable micromachined capacitive transducer
US6847090B2 (en) 2001-01-24 2005-01-25 Knowles Electronics, Llc Silicon capacitive microphone

Non-Patent Citations (99)

* Cited by examiner, † Cited by third party
Title
"Anti-Stiction Hydrophobic Surfaces for Microsystems", by P. Vourmard, et al., CSEM scientific and technical report 1998.
A Dry-Release Method Based on Polymer Columns for Microstructure Fabrication, C.H. Mastrangelo and G.S. Saloka, IEEE, 1993, pp. 77-81.
A High Performance MEMS Thin-Film Teflon Electret Microphone, Wen H. Hsieh, Tze-Jung Yao and Yu-Chong Tai, Transducers '99, Sendai, Japan, Jun. 7-10, 1999, pp. 1064-1067.
A Low-Voltage Silicon Condenser Microphone for Hearing Instrument Applications, Pirmin Rombach, Matthias Müllenborn, Udo Klein, Lis Nielsen and Roger Frehoff, Joint Meeting of ASA/EAA/DEGA, Session 2aEA, Engineering Acoustics: Silicon Sensors, J. Acoust. Soc. Am., vol. 105, No. 2, Pt. 2 Feb. 1999, p. 997.
A Micromachined Thin-Film Teflon Electret Microphone, Wen H. Hsieh, Tseng-Yang Hsu and Yu-Chong Tai, Transducers '97, 1997 International Conference on Solid-State Sensors and Actuators, Chicago, Jun. 16-19, 1997, pp. 425-428.
A New Class of Surface Modifiers for Stiction Reduction, Bong-Hwan Kim, Chang-Hoon Oh, Kukjin Chun, Taek-Dong Chung, Jang-Woong Byun and Yoon-Sik Lee, IEEE, 1999, pp. 189-193.
A Piezoelectric Triaxial Accelerometer, Patrick Scheeper, Jens Ole Gulløv and Lars Munch Kofoed, J. Micromech. Microeng., 6, 1996, pp. 131-133.
A Polymer Condenser Microphone on Silicon with On-Chip CMOS Amplifier, Michael Pedersen, Wouter Olthuis and Piet Bergveld, Transducers '97, 1997 International Conference on Solid-State Sensors and Actuators, Chicago, Jun. 16-19, 1997, pp. 445-446.
A Review of Silicon Microphones, P.R. Scheeper, A.G.H. van der Donk, W. Olthuis and P. Bergveld, Sensors and Actuators A, 44, 1994, pp. 1-11.
A Silicon Condenser Microphone With a Highly Perforated Backplate, J. Bergqvist, F. Rudolf, J. Maisano, F. Parodi and M. Rossi, IEEE, 1991, pp. 266-269.
A Silicon Condenser Microphone with a Silicon Nitride Diaphragm and Backplate, P.R. Scheeper, W. Olthuis and P. Bergveld, J. Micromech. Microeng., 2, 1992, pp. 187-189.
A Silicon Condenser Microphone with Polyimide Diaphragm and Backplate, Michael Pedersen, Wouter Olthuis and Piet Bergveld, Sensors and Actuators A, 63, 1997, pp. 97-104.
A Silicon Condenser Microphone: Materials and Technology, P. Scheeper, 1993, 204 p. 25-page fax from Anthony G. Sitko of Marshall, Gerstein & Borun to Jorn Bjerragaar-Nielsen of Sonion A/S, dated Jul. 28, 2005, transmitting an analysis of Patrick Scheeper, A Silicon Condenser Microphone: Materials and Technology, 1993 and Gregory T.A. Kovacs, Micromachined Transducer Sourcebook, 1998 and further transmitting a draft Request For Exparte Reexamination.
Ablation from Artificial or Laser-Induced Crater Surfaces of Silver by Laser Irradiation at 355nm, B. Toftmann, J. Schou and N.B. Larsen, Appl. Phys. A, 69 [Suppl.], 1999, pp. S811-S814.
Advanced Microphone Technology, Peter V. Leoppert and Timothy K. Wickstrom, Emkay Innovative Products, Rolling Meadows, Illinois, Presented at AVIOS, 1999.
Alkene Based Monolayer Films as Anti-Stiction Coatings for Polysilicone MEMS, W. Robert Ashurst, Christina Yau, Carlo Carraro, Roger T. Howe and Roya Maboudian, Sensors and Actuators A: Physical, vol. 91, No. 3, 2001.
Alkyltrichlorosilane-Based Self-Assembled Monolayer Films for Stiction Reduction in Silicon Micromachines, Uthara Srinivasan, Michael R. Houston, Roger T. Howe and Roya Maboudian, Journal of Microelectromechanical Systems, vol. 7, No. 2, Jun. 1998, pp. 252-260.
All-Surface-Micromachined Si Microphone, Flavio Pardo, R. Boie, G. Elko, R. Sarpeshkar and D.J. Bishop, Transducers '99, Sendai, Japan, Jun. 7-10, 1999, pp. 1068-1069.
Amplitude-Modulated Electro-Mechanical Feedback System for Silicon Condenser Microphones, A.G.H. van der Donk, P.R. Scheeper, W. Olthuis and P. Bergveld, J. Micromech. Microeng., 2 1992, pp. 211-214.
An Integrated Graphics to Pattern Generator System, G.W. Neudeck and P.V. Loeppert, IEEE, 1981, pp. 32-36.
An Integrated Silicon Capacitive Microphone with Frequency-Modulated Digital Output, Michael Pedersen, Wouter Olthuis and Piet Bergveld, Sensors and Actuators A, 69, 1998, pp. 267-275.
Anti-Stiction Coatings For Surface Micromachines, Roya Maboudian, SPIE Conference on Micromachining and Microfabrication Process Technology IV, Santa Clara, California, Sep. 1998, pp. 108-113.
Anti-Stiction Methods for Micromechanical Devices: A Statistical Comparison of Performance, Svetlana Tatic-Lucic, Paul Jaramillo, James Bustillo, Shawn Cunningham and Judd Carper, Transducers '99, Sendai, Japan, 1999, pp. 522-525.
Anti-Stiction Silanization Coating to Silicon Micro-Structures by a Vapor Phase Deposition Process, Jiro Sakata, Toshiyuki Tsuchiya, Atsuko Inoue, Sanae Tokumitsu and Hirofumi Funabashi, Technical Digest-Transducers '99, Sendai, Japan, Jun. 7-10, 1999.
Applications of Fluorocarbon Polymers in Micromechanics and Micromachining, H.V. Jansen, J.G.E. Gardeniers, J. Elders, H.A.C. Tilmans and M. Elwenspoek, Sensors and Actuators A, 41-42, 1994, pp. 136-140.
Characterization of Ultrathin Poly(ethylene glycol) Monolayers on Silicon Substrates, Alexander Papra, Nikolaj Gadegaard and Niels B. Larsen, Langmuir: The ACS Journal of Surfaces and Colloids, vol. 17, No. 5, 2001, pp. 1457-1460.
Chemical Vapor Deposition Coating for Micromachines, S.S. Mani, J.G. Fleming, J.J. Sniegowski, M.P. de Boer, L.W. Irwin, J.A. Walraven, D.M. Tanner and M.T. Dugger, Material Research Society Symp. Proc., vol. 616, 2000, pp. 21-26.
Complaint, Sonion MEMS A/S v. Knowles Electronics LLC, Civil Action No. 05-566-GMS, U.S. District Court for the District of Delaware, dated Aug. 4, 2005.
Critical Review: Adhesion in Surface Micromechnical Structures, Roya Maboudian and Roger T. Howe, J. Vac. Sci. Technol. B, vol. 15(1), Jan./Feb. 1997, pp. 1-20.
Crosstalk Study of an Integrated Ultrasound Transducer Array With a Micromachined Diaphragm Structure, Jian-Hua Mo, J. Brian Fowlkes, Andrew L. Robinson and Paul L. Carson, Transducers '91, 1991 International Conference on Solid-State Sensors and Actuators, 1991, pp. 258-265.
Deposition and Characterization of ITO Films Produced by Laser Ablation at 355 nm, E. Holmelund, B. Thestrup, N.B. Larsen, M.M. Nielsen, E. Johnson and S. Tougaard, Applied Physics A, 74, 2002, pp. 147-152, paper received on Jan. 16, 2001 and published online on Oct. 17, 2001.
Design of a Silicon Microphone with Differential Read-Out of a Sealed Double Parallel-Plate Capacitor, Jesper Bay, Ole Hansen, and Siebe Bouwstra, 8th International Conference on Solid-State Sensors and Actuators, and Eurosensors IX, Stockholm, Sweden, Jun. 25-29, 1995, pp. 700-703.
Development and Fabrication of Capacitive Sensors in Polyimide, Michael Pedersen, Wouter Olthuis and Piet Bergveld, Sensors and Materials, vol. 10, No. 1, 1998, pp. 1-20.
Development of a Modal Analysis Accelerometer Based on a Tunneling Displacement Transducer, Patrick R. Scheeper, J. Kurth Reynolds and Thomas W. Kenny, IEEE, Transducers '97, International Conference on Solid-State Sensors and Actuators, Chicago, Jun. 16-19, 1997, pp. 867-870.
Dichlorodimethylsilane as an Anti-Stiction Monolayer for MEMS: A Comparison to the Octadecyltrichlosilane Self-Assembled Monolayer, W. Robert Ashurst, Christina Yau, Carlo Carraro, Roya Maboudian and Michael T. Dugger, Journal of Microelectromechanical Systems, vol. 10, No. 1, Mar. 2001, pp. 41-49.
Directed Self-Assembly of Amphiphilic Regioregular Polythiophenes on the Nanometer Scale, D.R. Greve, Niels Reitzel, Tue Hassenkam, Jesper Bøgelund, Kristian Kjaer, Paul B. Howes, Niels B. Larsen, Manikandan Jayaraman, Manikandan Jayaraman, R.D. McCullough and T. Bjørnholm, Synthetic Metals, 102, 1999, pp. 1502-1505.
Electroacoustical Measurements of Silicon Microphones on Wafer Scale, Michael Pedersen, Ralf Schellin, Wouter Olthuis and Piet Bergveld, J. Acoust. Soc. Am., vol. 101, No. 4, Apr. 1997, pp. 2122-2128.
Elimination of Post-Release Adhesion in Microstructures Using Conformal Fluorocarbon Coatings, Piu Francis Man, Bishnu P. Gogoi and Carlos H. Mastrangelo, Journal of Microelectromechanical Systems, vol. 6, No. 1, Mar. 1997, pp. 25-34.
Fabrication and Characterization of a Piezoelectric Accelerometer, Roger de Rues, Jens Ole Gullov and Patrick R. Scheeper, J. Micromech. Microeng., vol. 9, 1999, pp. 123-126.
Fabrication of a Subminiature Silicone Condenser Microphone Using The Sacrificial Layer Technique, P. R. Scheeper, W. Olthuis and P. Bergveld, IEEE, 1991, pp. 408-411.
Fabrication of Silicon Condenser Microphones Using Single Wafer Technology, P.R. Scheeper, A.G.H. van der Donk, W. Olthuis and P. Bergveld, Journal of Microelectromechanical Systems, vol. 1, No. 3, Sep. 1992, pp. 147-154.
Fluorocarbon Film for Protection from Alkaline Etchant and Elimination of In-Use Stiction, Yoshinori Matsumoto, Kazumasa Yoshida and Makoto Ishida, Transducers '97, International Conference on Solid-State Sensors and Actuators, Chicago, Jun. 16-19, 1997, pp. 695-698.
Future of MEMS: An Industry Point of View, Benedetto Vigna, 7th International Conference on Thermal, Mechanical and Multiphysics Simulation and Experiments in Micro-Electronics and Micro-Systems, EuroSim E 2006, IEEE, 2006 (first page only).
Harmonic Distortion in Silicon Condenser Microphones, Michael Pedersen, Wouter Olthuis and Piet Bergveld, J. Acoust. Soc. Am., vol. 102, No. 3, Sep. 1997, pp. 1582-1587.
High Sensitivity Acoustic Transducers With Thin p + Membranes and Gold Back-Plate, A.E. Kabir, R. Bashir, J. Bernstein, J. De Santis, R. Mathews, J.O. O'Boyle and C. Bracken, Sensors and Actuators, vol. 78, 1999, pp. 138-142.
High-Performance Condenser Microphone with Fully Integrated CMOS Amplifier and DC-DC Voltage Converter, Michael Pedersen, Wouter Olthuis and Piet Bergveld, Journal of Microelectromechanical Systems, vol. 7, No. 4, Dec. 1998, pp. 387-394.
Improved Autoadhesion Measurement Method for Micromachined Polysilicon Beams, Maarten P. de Boer and Terry A. Michalske, Materials Research Society Symp. Proc., vol. 444, 1997, pp. 87-92.
Improved IC-Compatible Piezoelectric Microphone and CMOS Process, E.S. Kim, J.R. Kim and R.S. Muller, IEEE, 1991, pp. 270-273.
Improvement of the Performance of Microphones with a Silicon Nitride Diaphragm and Backplate, P.R. Scheeper, W. Olthuis and P. Bergveld, Sensors and Actuators A, 40, 1994, pp. 179-186.
Investigation of Attractive Forces Between PECVD Silicon Nitride Microstructures and an Oxidized Silicon Substrate, P. R. Scheeper, J.A. Voorthuyzen, W. Olthuis and P. Bergveld, Sensors and Actuators A, 30, 1992, pp. 231-239.
Langmuir-Blodgett Films of a Functionalized Molecule with Cross-Sectional Mismatch Between Head and Tail, J. Garnaes, N.B. Larsen, T. Bjørnholm, M. Jørgensen, K. Kjaer, J. Als-Nielsen, J. Jørgensen and J.A. Zasadzinski, Science, vol. 264, May 27, 1994, pp. 1301-1304.
Lubricating Effect of Thin Films of Styrene-Dimethylsiloxane Block Copolymers, Sokol Ndoni, Patric Jannasch, Niels Bent Larsen and Kristoffer Almdal, Langmuir: The ACS Journal of Surfaces and Colloids, vol. 15, No. 11, 1999, pp. 3859-3865.
Lubrication of Digital Micromirror Devices(TM), Steven A. Henck, Tribology Letters, vol. 3, 1997, pp. 239-247.
Lubrication of Polysilicon Micromechanisms with Self-Assembled Monolayers, Uthara Srinivasan, Jonathan D. Foster, Usman Habib, Roger T. Howe, Roya Maboudian, Donna Cowell Senft and Michael T. Dugger, Solid-State Sensor and Actuator Workshop, Milton Head Island, South Carolina, Jun. 8-11, 1998, pp. 156-161.
Measuring and Modeling Electrostatic Adhesion in Micromachines, M.P. de Boer, M.R. Tabbara, M.T. Dugger, P.J. Clews and T.A. Michalskim, Transducers '97, International Conference on Solid State Sensors and Actuators, Chicago, Jun. 16-19, 1997, vol. 1, pp. 229-232.
Mechanistic Aspects of Alkylchlororsilane Coupling Reactions, R.R. Rye, G.C. Nelson and M.T. Dugger, Langmuir, vol. 13, 1997, pp. 2965-2972.
Microfluidic Networks Made of Poly(dimethylsiloxane), Si, and Au Coated with Polyethylene Glycol for Patterning Proteins onto Surfaces, Alexander Papra, Andre Bernard, David Juncker, Niels B. Larsen, Bruno Michel and Emmanuel Delmarche, Langmuir: The ACS Journal of Surfaces and Colloids, vol. 17, 2001, pp. 4090-4095.
Micromachined Microphones Have Amplified Opportunities, Sensor Business Digest, vol. 6, No. 7, Apr. 1, 1997.
Micromachined Transducers Sourcebook, Gregory T.A. Kovacs, WCB McGaw-Hill, 1998, 911 p.
Modelling of Silicon Condenser Microphones, A.G.H. van der Donk, P.R. Scheeper, W. Olthuis and P. Bergveld, Sensors and Actuators A, 40, 1994, pp. 203-216.
Morphology Evolution of Polycarbonate-Polystrene Blends During Compounding, Chengzhi Chuai, Kristoffer Almdal, Ib Johannsen and Jørgen Lyngaae-Jørgensen, The Danish Polymer Center at The Technical University of Denmark, Roskilde, Denmark, 2001.
New Applications and Services in Smart Buildings Using Multifunctional Transponders, Gerd von Bögel and Klaus Scherer, MST News, Feb. 2001, pp. 34-35.
Ning et al., "Fabrication of a silicon miceomachined capacitive microphone using a dry-etch process" Sensors and Actuators A 53 (1996) 237-242.
On the Electromechanical Behaviour of Thin Perforated Backplates in Silicon Condenser Microphones, M. Pedersen, W. Olthuis and P. Bergveld, 8th International Conference on Solid-State Sensors and Actuators, and Eurosensors IX, Stockholm, Sweden, 234-A7, Jun. 25-29, 1995, pp. 13-16.
On the Mechanical Behaviour of Thin Perforated Plates and Their Application in Silicon Condenser Microphones, M. Pedersen, W. Olthuis and P. Bergveld, Sensors and Actuators A, 54, 1996, pp. 499-504.
Optimization of Capative Microphone and Pressure Sensor Perfomance by Capacitor-Electrode Shaping, J.A. Voorthuyzen, A.J. Spenkels, A.G.H. van deer Donk, P.R. Scheeper and P. Bergveld, Sensors and Actuators A, 25-27, 1991, pp. 331-336.
Ordering of the Disk-Like 2,3,6,7,10,11-Hexakis(hexylthio)triphenylene in Solution and at a Liquid-Solid Interface, J.C. Gabriel, N.B. Larsen, M. Larsen, N. Harrit, J.S. Pedersen, K. Schaumburg and K. Bechgaard, Langmuir: The ACS Journal of Surfaces and Colloids, vol. 12, 1996, pp. 1690-1692.
PCT International Preliminary Examination Report, European Patent Office, completed Jun. 13, 2003, for International application No. PCT/DK02/00365 which claims priority to U.S. Appl. No. 09/867,606 (now U.S. Patent No. 6,859,542).
PECVD Silicon Nitride Diaphragms for Condenser Microphones, P.R. Scheeper, J.A. Voorthuyzen and P. Bergveld, Sensors and Actuators B, 4, 1991, pp. 79-84.
Phase Transitions in Diglyceride Monolayers Studied by Computer Simulations, Pressure-Area Isotherms and X-Ray Diffraction, G.H. Peters, S. Toxvaerd, N.B. Larsen, T. Bjørnholm, K. Schaumburg and K. Kjaer, Il Nuovo Cimento, vol. 16D, No. 9, 1994, pp. 1479-1485.
Polymer Durability, Afshin Ghanbari-Siahkali, Peter Kingshott, Niels Bent Larsen, Lutfi Fakhri Al-Saidi, Kristoffer Almdal, and Ib Johannsen, MONOPOL Centerkontrakten at Danish Polymercenter, May 22, 2001.
Pulsed Laser Deposited Coating for Stiction and Wear Reduction in MEMS Device, J.S. Pelt, M.E. Ramsey, R. Magaña Jr., E. Poindexter Jr., M.P. de Boer, D.A. LaVan, M.T. Dugger, J.H. Smith and S.M. Durbin, Part of the SPIE Conference on Micromachining and Microfabrication Process Technology V, Santa Clara, California, SPIE vol. 3874, Sep. 1999, pp. 76-84.
Redacted version of Stipulated Order Of Dismissal With Prejudice, Sonion MEMS A/S v. Knowles Electronics LLC, Civil Action No. 05-566-GMS, U.S. District Court for the District of Delaware; non-redacted version filed under seal on Mar. 14, 2006 and signed by Judge Sleet on Mar. 31, 2006; redacted version entered into court docket on Apr. 7, 2006.
Selective W for Coating and Releasing MEMS Devices, S.S. Mani, J.G. Fleming, J.J. Sniegowski, M.P. de Boer, L.W. Irwin, J.A. Walraven, D.M. Tanner, D.A. LaVan, Material Research Society Symp. Proc., vol. 605, 2000, pp. 135-140.
Self-Assembled Fluorocarbon Films for Enhanced Stiction Reduction, Uthara Srinivasan, Michael R. Houston, Roger T. Howe and Roya Maboudian, Transducers '97, International Conference on Solid-State Sensors and Actuators, Chicago, June 16-19, 1997, pp. 1399-1402.
Self-Assembled Monolayer Films as Durable Anti-Stiction Coatings for Polysilicon Microstructures, Michael R. Houston, Roya Maboudian and Roger T. Howe, Solid-State Sensor and Actuator Workshop, Hilton Head, South Carolina, Jun. 2-6, 1996, pp. 42-47.
Self-Assembled Monolayers As Anti-Stiction Coatings For MEMS: Characteristics and Recent Developments, Roya Maboudian, W. Robert Ashurst and Carlo Carraro, Sensors and Actuators, vol. 82, 2000, pp. 219-223.
Self-Assembly of Regioregular, Amphiphilic Polythiophenes into Highly Ordered pi-Stacked Conjugated Polymer Thin Films and Nanocircuits, Thomas Bjørnholm, Daniel R. Greve, Niels Reitzel, Tue Hassenkam, Kristian Kjaer, Paul B. Howes, Niels B. Larsen, Jesper Bøgelund, Manikandan Jayaraman, Paul C. Ewbank and Richard D. McCullough, J. Am. Chem. Soc., vol. 120, No. 30, 1998, pp. 7643-7644.
Silanization of Solid Substrates: A Step Toward Reproducibility, J.B. Brzoska, I. Ben Azouz and F. Rondelez, Langmuir, vol. 10, 1994, pp. 4367-4373.
Silicon Microphone for Hearing Aid Applications, Jesper Bay, Ph.D Thesis, ATV Industrial Research Education Project, Erhvervsforskerprojekt EF 498, Jun. 1997, 136 p.
Silicon Microphones-A Danish Perspective, Siebe Bouwstra, Torben Storgaard-Larsen, Patrick Scheeper, Jens Ole Gullov, Jesper Bay, Matthias Müllenborn and Pirmin Rombach, J. Micromech. Microeng., 8, 1998, pp. 64-68.
Stiction in Surface Micromachining, Niels Tas, Tonny Sonnenberg, Henri Jansen, Rob Legtenberg and Miko Elwenspoek, J. Micromech. Microeng., 6, 1996, pp. 385-397.
Structural Studies of Langmuir and Langmuir-Blodgett Films of Functionalized Surfactants, N.B. Larsen, T. Bjørnholm, J. Garnaes, J. Als-Nielsen and K. Kjaer, Synthetic Metals, vol. 71, 1995, pp. 1985-1988.
Structure and Dynamics of Lipid Monolayers: Implications for Enzyme Catalysed Lipolysis, Günther H. Peters, S. Toxvaerd, N.B. Larsen, T. Bjørnholm, K. Schaumburg and K. Kjaer, Structural Biology, vol. 2, No. 5, May 1995, pp. 395-401.
Suppression of Stiction in MEMS, C.H. Mastrangelo, 1999 Spring MRS Meeting, Boston, MA, Dec. 1999, pp. 1-12.
Surface Micromachined Driven Shielded Condenser Microphone With a Sacrificial Layer Etched From the Backside, M. Ikeda, N. Shimizu and M. Esashi, Transducers '99, Sendai, Japan, Jun. 7-10, 1999, pp. 1070-1073.
Surface Modification of Polystyrene by Blending Substituted Styrene Copolymers, Xianyi Chen, Katja Jankova, Joergen Kops, Niels B. Larsen, Walther Batsberg and Ib Johannsen, Journal of Polymer Science: Part B, vol. 39, 2001, pp. 1046-1054.
Surface Morphology of PS-PDMS Diblock Copolymer Films, T.H. Andersen, S. Tougaard, N.B. Larsen, K. Almdal and I. Johannsen, Journal of Electron Spectroscopy and Related Phenomena, vol. 121, 2001, pp. 93-110.
Surface Texturing and Chemical Treatment Methods for Reducing High Adhesion Forces at Micromachine Interfaces, K. Komvopoulos, Part of the SPIE Conference on Materials and Device Characterization in Micromachining, Santa Clara, California, SPIE vol. 3512, Sep. 1998, pp. 106-122.
The Design, Fabrication, and Testing of Corrugated Silicon Nitride Diaphragms, Patrick R. Scheeper, Wouter Olthuis and Piet Bergveld, Journal of Microelectromechanical Systems, vol. 3, No. 1, Mar. 1994, pp. 36-42.
The Effect of Release-Etch Processing on Surface Microstructure Stiction, R.L. Alley G.J.Cuan, R.T. Howe and K. Komvopoulos, IEEE, 1992, pp. 202-207.
The Incredible Shrinking Microphone, Jennifer Ouellette, The Industrial Physicist, Aug. 1999, pp. 7-9.
The Influence of Coating Structure on Micromachine Stiction, J.G. Kushmerick, M.G. Hankins, M.P. de Boer, P.J. Clews, R.W. Carpick and B.C. Bunker, Tribology Letters, vol. 10, No. 1-2, 2001, pp. 103-108.
The Lamellar Period in Symmetric Diblock Copolymer Thin Films Studied by Neutron Reflectivity and AFM, Nikolaj Gadegaard Kristoffer Almdal, Niels Bent Larsen and Kell Mortensen, Applied Surface Science, vol. 142, 1999, pp. 608-613.
Thoughts on the Structure of Alkylsilane Monolayers, Mark J. Stevens, Langmuir, vol. 15, 1999, pp. 2773-2778.
Transport Mechanisms of Alkanethiols During Microcontact Printing on Gold, E. Delamarche, H. Schmid, A. Bietsch, N.B. Larsen, H. Rothuizen, B. Michel and H. Biebuyck, J. Phys. Chem. B, vol. 102, No. 18, 1998, pp. 3324-3334.
Vapor Phase Self-Assembly of Fluorinated Monolayers on Silicon and Germanium Oxide, Patrick W. Hoffmann, Martin Stelzle and John F. Rabolt, Langmuir, vol. 13, 1997, pp. 1877-1880.
Wettability Modification of Polysilicon for Stiction Reduction in Silicon Based Micro-Electromechanical Structures, Angeles Marcia Almanza-Workman, Srini Raghaven, Pierre Deymier, David J. Monk and Ray Roop, Solid State Phenomena, vol. 76-77, 2001, pp. 23-26.
X-ray Diffraction and Molecular-Dynamics Studies: Structural Analysis of Phases in Diglyceride Monolayers, G.H. Peters, N.B. Larsen, T. Bjørnholm, S. Toxvaerd, K. Schaumburg and K. Kjaer, American Physical Society, Physical Review E, vol. 57, No. 3, Mar. 1998, pp. 3153-3163.

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