USRE40486E1 - Self-aligned non-volatile memory cell - Google Patents
Self-aligned non-volatile memory cell Download PDFInfo
- Publication number
- USRE40486E1 USRE40486E1 US11/176,883 US17688305A USRE40486E US RE40486 E1 USRE40486 E1 US RE40486E1 US 17688305 A US17688305 A US 17688305A US RE40486 E USRE40486 E US RE40486E
- Authority
- US
- United States
- Prior art keywords
- floating gate
- memory cell
- substrate
- volatile memory
- gate region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime, expires
Links
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 125000006850 spacer group Chemical group 0.000 claims abstract description 22
- 239000004065 semiconductor Substances 0.000 claims description 2
- 238000009413 insulation Methods 0.000 claims 2
- 230000037361 pathway Effects 0.000 abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 13
- 238000000034 method Methods 0.000 description 11
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 11
- 229910052814 silicon oxide Inorganic materials 0.000 description 11
- 229920005591 polysilicon Polymers 0.000 description 10
- 230000008878 coupling Effects 0.000 description 9
- 238000010168 coupling process Methods 0.000 description 9
- 238000005859 coupling reaction Methods 0.000 description 9
- 239000003990 capacitor Substances 0.000 description 7
- 150000004767 nitrides Chemical class 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 230000005689 Fowler Nordheim tunneling Effects 0.000 description 1
- -1 boron ions Chemical class 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76895—Local interconnects; Local pads, as exemplified by patent document EP0896365
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42324—Gate electrodes for transistors with a floating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42324—Gate electrodes for transistors with a floating gate
- H01L29/42328—Gate electrodes for transistors with a floating gate with at least one additional gate other than the floating gate and the control gate, e.g. program gate, erase gate or select gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims (6)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/176,883 USRE40486E1 (en) | 2000-11-30 | 2005-07-07 | Self-aligned non-volatile memory cell |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/727,571 US6479351B1 (en) | 2000-11-30 | 2000-11-30 | Method of fabricating a self-aligned non-volatile memory cell |
US10/001,557 US6841823B2 (en) | 2000-11-30 | 2001-10-24 | Self-aligned non-volatile memory cell |
US11/176,883 USRE40486E1 (en) | 2000-11-30 | 2005-07-07 | Self-aligned non-volatile memory cell |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/001,557 Reissue US6841823B2 (en) | 2000-11-30 | 2001-10-24 | Self-aligned non-volatile memory cell |
Publications (1)
Publication Number | Publication Date |
---|---|
USRE40486E1 true USRE40486E1 (en) | 2008-09-09 |
Family
ID=24923175
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/727,571 Expired - Fee Related US6479351B1 (en) | 2000-11-30 | 2000-11-30 | Method of fabricating a self-aligned non-volatile memory cell |
US10/001,557 Ceased US6841823B2 (en) | 2000-11-30 | 2001-10-24 | Self-aligned non-volatile memory cell |
US11/176,883 Expired - Lifetime USRE40486E1 (en) | 2000-11-30 | 2005-07-07 | Self-aligned non-volatile memory cell |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/727,571 Expired - Fee Related US6479351B1 (en) | 2000-11-30 | 2000-11-30 | Method of fabricating a self-aligned non-volatile memory cell |
US10/001,557 Ceased US6841823B2 (en) | 2000-11-30 | 2001-10-24 | Self-aligned non-volatile memory cell |
Country Status (11)
Country | Link |
---|---|
US (3) | US6479351B1 (en) |
EP (1) | EP1340264A1 (en) |
JP (1) | JP2004519094A (en) |
KR (1) | KR20030057560A (en) |
CN (1) | CN1220274C (en) |
AU (1) | AU2002214585A1 (en) |
CA (1) | CA2427232A1 (en) |
HK (1) | HK1059683A1 (en) |
NO (1) | NO20032188L (en) |
TW (1) | TW515051B (en) |
WO (1) | WO2002045176A1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8648406B2 (en) * | 2011-12-29 | 2014-02-11 | Dongbu Hitek Co., Ltd. | Single poly EEPROM having a tunnel oxide layer |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6624029B2 (en) * | 2000-11-30 | 2003-09-23 | Atmel Corporation | Method of fabricating a self-aligned non-volatile memory cell |
DE10209784A1 (en) * | 2001-09-01 | 2003-12-04 | Univ Stuttgart Inst Fuer Chemi | Oligomers and polymers containing sulfinate groups and process for their preparation |
US6831325B2 (en) * | 2002-12-20 | 2004-12-14 | Atmel Corporation | Multi-level memory cell with lateral floating spacers |
US6767791B1 (en) * | 2003-02-10 | 2004-07-27 | Advanced Micro Devices, Inc. | Structure and method for suppressing oxide encroachment in a floating gate memory cell |
US6998670B2 (en) * | 2003-04-25 | 2006-02-14 | Atmel Corporation | Twin EEPROM memory transistors with subsurface stepped floating gates |
US6888192B2 (en) * | 2003-04-25 | 2005-05-03 | Atmel Corporation | Mirror image non-volatile memory cell transistor pairs with single poly layer |
US6919242B2 (en) * | 2003-04-25 | 2005-07-19 | Atmel Corporation | Mirror image memory cell transistor pairs featuring poly floating spacers |
US6822285B1 (en) | 2003-07-31 | 2004-11-23 | Atmel Corporation | EEPROM with multi-member floating gate |
US20050239250A1 (en) * | 2003-08-11 | 2005-10-27 | Bohumil Lojek | Ultra dense non-volatile memory array |
JP4521597B2 (en) * | 2004-02-10 | 2010-08-11 | ルネサスエレクトロニクス株式会社 | Semiconductor memory device and manufacturing method thereof |
US7098106B2 (en) * | 2004-07-01 | 2006-08-29 | Atmel Corporation | Method of making mirror image memory cell transistor pairs featuring poly floating spacers |
US20060046402A1 (en) * | 2004-08-31 | 2006-03-02 | Micron Technology, Inc. | Flash cell structures and methods of formation |
US8099783B2 (en) * | 2005-05-06 | 2012-01-17 | Atmel Corporation | Security method for data protection |
US20080119022A1 (en) * | 2006-11-22 | 2008-05-22 | Atmel Corporation | Method of making eeprom transistors |
CN104465353B (en) * | 2014-11-28 | 2018-01-26 | 上海华力微电子有限公司 | The preparation method of ono dielectric layer |
Citations (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4833096A (en) | 1988-01-19 | 1989-05-23 | Atmel Corporation | EEPROM fabrication process |
US5021848A (en) | 1990-03-13 | 1991-06-04 | Chiu Te Long | Electrically-erasable and electrically-programmable memory storage devices with self aligned tunnel dielectric area and the method of fabricating thereof |
US5087584A (en) | 1990-04-30 | 1992-02-11 | Intel Corporation | Process for fabricating a contactless floating gate memory array utilizing wordline trench vias |
US5108939A (en) | 1990-10-16 | 1992-04-28 | National Semiconductor Corp. | Method of making a non-volatile memory cell utilizing polycrystalline silicon spacer tunnel region |
US5268585A (en) | 1991-07-01 | 1993-12-07 | Sharp Kabushiki Kaisha | Non-volatile memory and method of manufacturing the same |
US5338952A (en) * | 1991-06-07 | 1994-08-16 | Sharp Kabushiki Kaisha | Non-volatile memory |
US5402374A (en) * | 1993-04-30 | 1995-03-28 | Rohm Co., Ltd. | Non-volatile semiconductor memory device and memory circuit using the same |
US5477068A (en) | 1992-03-18 | 1995-12-19 | Rohm Co., Ltd. | Nonvolatile semiconductor memory device |
US5479368A (en) * | 1993-09-30 | 1995-12-26 | Cirrus Logic, Inc. | Spacer flash cell device with vertically oriented floating gate |
US5544103A (en) | 1992-03-03 | 1996-08-06 | Xicor, Inc. | Compact page-erasable eeprom non-volatile memory |
US5614747A (en) * | 1994-07-28 | 1997-03-25 | Hyundai Electronics Industries Co., Ltd. | Method for manufacturing a flash EEPROM cell |
US5616941A (en) * | 1994-08-29 | 1997-04-01 | Motorola Inc. | Electrically programmable read-only memory cell |
US5618742A (en) | 1992-01-22 | 1997-04-08 | Macronix Internatioal, Ltd. | Method of making flash EPROM with conductive sidewall spacer contacting floating gate |
US5703388A (en) | 1996-07-19 | 1997-12-30 | Mosel Vitelic Inc. | Double-poly monos flash EEPROM cell |
US5776787A (en) | 1993-09-30 | 1998-07-07 | Cirrus Logic, Inc. | Spacer flash cell process |
US5786612A (en) | 1995-10-25 | 1998-07-28 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device comprising trench EEPROM |
US5789297A (en) | 1996-09-23 | 1998-08-04 | Mosel Vitelic Inc. | Method of making EEPROM cell device with polyspacer floating gate |
US5793079A (en) * | 1996-07-22 | 1998-08-11 | Catalyst Semiconductor, Inc. | Single transistor non-volatile electrically alterable semiconductor memory device |
JPH11154712A (en) | 1997-11-20 | 1999-06-08 | Nec Corp | Nonvolatile semiconductor storage device and its manufacture |
US5918124A (en) | 1997-10-06 | 1999-06-29 | Vanguard International Semiconductor Corporation | Fabrication process for a novel multi-storage EEPROM cell |
JPH11186416A (en) | 1997-12-19 | 1999-07-09 | Rohm Co Ltd | Non-volatile semiconductor storage device and its manufacture |
US5963806A (en) | 1996-12-09 | 1999-10-05 | Mosel Vitelic, Inc. | Method of forming memory cell with built-in erasure feature |
US5972752A (en) | 1997-12-29 | 1999-10-26 | United Semiconductor Corp. | Method of manufacturing a flash memory cell having a tunnel oxide with a long narrow top profile |
US6031264A (en) * | 1997-09-29 | 2000-02-29 | Taiwan Semiconductor Manufacturing Company | Nitride spacer technology for flash EPROM |
US6043530A (en) | 1998-04-15 | 2000-03-28 | Chang; Ming-Bing | Flash EEPROM device employing polysilicon sidewall spacer as an erase gate |
US6060766A (en) | 1997-08-25 | 2000-05-09 | Advanced Micro Devices, Inc. | Protection of hydrogen sensitive regions in semiconductor devices from the positive charge associated with plasma deposited barriers or layers |
US6074914A (en) | 1998-10-30 | 2000-06-13 | Halo Lsi Design & Device Technology, Inc. | Integration method for sidewall split gate flash transistor |
US6091101A (en) | 1998-03-30 | 2000-07-18 | Worldwide Semiconductor Manufacturing Corporation | Multi-level flash memory using triple well |
US6124170A (en) | 1996-04-12 | 2000-09-26 | Lg Semicon Co., Ltd. | Method for making flash memory |
US6159797A (en) * | 1998-06-08 | 2000-12-12 | United Microelectronics Corp. | Method of fabricating a flash memory with a planarized topography |
US6160287A (en) * | 1998-12-08 | 2000-12-12 | United Microelectronics Corp. | Flash memory |
US6229176B1 (en) * | 1998-07-15 | 2001-05-08 | Taiwan Semiconductor Manufacturing Company | Split gate flash with step poly to improve program speed |
US20020000605A1 (en) * | 2000-06-28 | 2002-01-03 | Chun-Mai Liu | Method of fabricating high-coupling ratio split gate flash memory cell array |
US6392267B1 (en) * | 1997-04-25 | 2002-05-21 | Alliance Semiconductor Corporation | Flash EPROM array with self-aligned source contacts and programmable sector erase architecture |
US6465835B1 (en) * | 1999-09-27 | 2002-10-15 | Advanced Micro Devices, Inc. | Charge gain/charge loss junction leakage prevention for flash technology by using double isolation/capping layer between lightly doped drain and gate |
US6476440B1 (en) * | 1999-08-24 | 2002-11-05 | Hyundai Electronics Industries Co., Inc. | Nonvolatile memory device and method of manufacturing the same |
US6563166B1 (en) * | 1999-03-11 | 2003-05-13 | Mosel Vitelic, Inc. | Flash cell device |
-
2000
- 2000-11-30 US US09/727,571 patent/US6479351B1/en not_active Expired - Fee Related
-
2001
- 2001-10-15 JP JP2002547238A patent/JP2004519094A/en active Pending
- 2001-10-15 EP EP01983134A patent/EP1340264A1/en not_active Withdrawn
- 2001-10-15 CN CNB018198139A patent/CN1220274C/en not_active Expired - Fee Related
- 2001-10-15 AU AU2002214585A patent/AU2002214585A1/en not_active Abandoned
- 2001-10-15 KR KR10-2003-7007086A patent/KR20030057560A/en not_active Application Discontinuation
- 2001-10-15 WO PCT/US2001/032157 patent/WO2002045176A1/en active Application Filing
- 2001-10-15 CA CA002427232A patent/CA2427232A1/en not_active Abandoned
- 2001-10-24 US US10/001,557 patent/US6841823B2/en not_active Ceased
- 2001-11-22 TW TW090128915A patent/TW515051B/en not_active IP Right Cessation
-
2003
- 2003-05-14 NO NO20032188A patent/NO20032188L/en not_active Application Discontinuation
-
2004
- 2004-04-13 HK HK04102566A patent/HK1059683A1/en not_active IP Right Cessation
-
2005
- 2005-07-07 US US11/176,883 patent/USRE40486E1/en not_active Expired - Lifetime
Patent Citations (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4833096A (en) | 1988-01-19 | 1989-05-23 | Atmel Corporation | EEPROM fabrication process |
US5021848A (en) | 1990-03-13 | 1991-06-04 | Chiu Te Long | Electrically-erasable and electrically-programmable memory storage devices with self aligned tunnel dielectric area and the method of fabricating thereof |
US5087584A (en) | 1990-04-30 | 1992-02-11 | Intel Corporation | Process for fabricating a contactless floating gate memory array utilizing wordline trench vias |
US5108939A (en) | 1990-10-16 | 1992-04-28 | National Semiconductor Corp. | Method of making a non-volatile memory cell utilizing polycrystalline silicon spacer tunnel region |
US5338952A (en) * | 1991-06-07 | 1994-08-16 | Sharp Kabushiki Kaisha | Non-volatile memory |
US5268585A (en) | 1991-07-01 | 1993-12-07 | Sharp Kabushiki Kaisha | Non-volatile memory and method of manufacturing the same |
US5618742A (en) | 1992-01-22 | 1997-04-08 | Macronix Internatioal, Ltd. | Method of making flash EPROM with conductive sidewall spacer contacting floating gate |
US5544103A (en) | 1992-03-03 | 1996-08-06 | Xicor, Inc. | Compact page-erasable eeprom non-volatile memory |
US5477068A (en) | 1992-03-18 | 1995-12-19 | Rohm Co., Ltd. | Nonvolatile semiconductor memory device |
US5402374A (en) * | 1993-04-30 | 1995-03-28 | Rohm Co., Ltd. | Non-volatile semiconductor memory device and memory circuit using the same |
US5776787A (en) | 1993-09-30 | 1998-07-07 | Cirrus Logic, Inc. | Spacer flash cell process |
US5479368A (en) * | 1993-09-30 | 1995-12-26 | Cirrus Logic, Inc. | Spacer flash cell device with vertically oriented floating gate |
US5614747A (en) * | 1994-07-28 | 1997-03-25 | Hyundai Electronics Industries Co., Ltd. | Method for manufacturing a flash EEPROM cell |
US5616941A (en) * | 1994-08-29 | 1997-04-01 | Motorola Inc. | Electrically programmable read-only memory cell |
US5786612A (en) | 1995-10-25 | 1998-07-28 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device comprising trench EEPROM |
US6124170A (en) | 1996-04-12 | 2000-09-26 | Lg Semicon Co., Ltd. | Method for making flash memory |
US5703388A (en) | 1996-07-19 | 1997-12-30 | Mosel Vitelic Inc. | Double-poly monos flash EEPROM cell |
US5793079A (en) * | 1996-07-22 | 1998-08-11 | Catalyst Semiconductor, Inc. | Single transistor non-volatile electrically alterable semiconductor memory device |
US5789297A (en) | 1996-09-23 | 1998-08-04 | Mosel Vitelic Inc. | Method of making EEPROM cell device with polyspacer floating gate |
US5963806A (en) | 1996-12-09 | 1999-10-05 | Mosel Vitelic, Inc. | Method of forming memory cell with built-in erasure feature |
US6392267B1 (en) * | 1997-04-25 | 2002-05-21 | Alliance Semiconductor Corporation | Flash EPROM array with self-aligned source contacts and programmable sector erase architecture |
US6060766A (en) | 1997-08-25 | 2000-05-09 | Advanced Micro Devices, Inc. | Protection of hydrogen sensitive regions in semiconductor devices from the positive charge associated with plasma deposited barriers or layers |
US6031264A (en) * | 1997-09-29 | 2000-02-29 | Taiwan Semiconductor Manufacturing Company | Nitride spacer technology for flash EPROM |
US5918124A (en) | 1997-10-06 | 1999-06-29 | Vanguard International Semiconductor Corporation | Fabrication process for a novel multi-storage EEPROM cell |
JPH11154712A (en) | 1997-11-20 | 1999-06-08 | Nec Corp | Nonvolatile semiconductor storage device and its manufacture |
JPH11186416A (en) | 1997-12-19 | 1999-07-09 | Rohm Co Ltd | Non-volatile semiconductor storage device and its manufacture |
US6255691B1 (en) | 1997-12-19 | 2001-07-03 | Rohm Co., Ltd. | Nonvolatile semiconductor memory device and manufacturing process thereof |
US5972752A (en) | 1997-12-29 | 1999-10-26 | United Semiconductor Corp. | Method of manufacturing a flash memory cell having a tunnel oxide with a long narrow top profile |
US6207507B1 (en) | 1998-03-30 | 2001-03-27 | Taiwan Semiconductor Manufacturing Corp. | Multi-level flash memory using triple well process and method of making |
US6091101A (en) | 1998-03-30 | 2000-07-18 | Worldwide Semiconductor Manufacturing Corporation | Multi-level flash memory using triple well |
US6043530A (en) | 1998-04-15 | 2000-03-28 | Chang; Ming-Bing | Flash EEPROM device employing polysilicon sidewall spacer as an erase gate |
US6159797A (en) * | 1998-06-08 | 2000-12-12 | United Microelectronics Corp. | Method of fabricating a flash memory with a planarized topography |
US6229176B1 (en) * | 1998-07-15 | 2001-05-08 | Taiwan Semiconductor Manufacturing Company | Split gate flash with step poly to improve program speed |
US6074914A (en) | 1998-10-30 | 2000-06-13 | Halo Lsi Design & Device Technology, Inc. | Integration method for sidewall split gate flash transistor |
US6160287A (en) * | 1998-12-08 | 2000-12-12 | United Microelectronics Corp. | Flash memory |
US6563166B1 (en) * | 1999-03-11 | 2003-05-13 | Mosel Vitelic, Inc. | Flash cell device |
US6476440B1 (en) * | 1999-08-24 | 2002-11-05 | Hyundai Electronics Industries Co., Inc. | Nonvolatile memory device and method of manufacturing the same |
US6465835B1 (en) * | 1999-09-27 | 2002-10-15 | Advanced Micro Devices, Inc. | Charge gain/charge loss junction leakage prevention for flash technology by using double isolation/capping layer between lightly doped drain and gate |
US20020000605A1 (en) * | 2000-06-28 | 2002-01-03 | Chun-Mai Liu | Method of fabricating high-coupling ratio split gate flash memory cell array |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8648406B2 (en) * | 2011-12-29 | 2014-02-11 | Dongbu Hitek Co., Ltd. | Single poly EEPROM having a tunnel oxide layer |
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US20020063278A1 (en) | 2002-05-30 |
WO2002045176A1 (en) | 2002-06-06 |
NO20032188L (en) | 2003-07-17 |
JP2004519094A (en) | 2004-06-24 |
CN1220274C (en) | 2005-09-21 |
HK1059683A1 (en) | 2004-07-09 |
US6841823B2 (en) | 2005-01-11 |
EP1340264A1 (en) | 2003-09-03 |
NO20032188D0 (en) | 2003-05-14 |
CN1478303A (en) | 2004-02-25 |
WO2002045176B1 (en) | 2002-08-22 |
TW515051B (en) | 2002-12-21 |
CA2427232A1 (en) | 2002-06-06 |
AU2002214585A1 (en) | 2002-06-11 |
US6479351B1 (en) | 2002-11-12 |
KR20030057560A (en) | 2003-07-04 |
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