USRE39261E1 - Method and apparatus for an integrated laser beam scanner - Google Patents
Method and apparatus for an integrated laser beam scanner Download PDFInfo
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- USRE39261E1 USRE39261E1 US10/014,563 US1456301A USRE39261E US RE39261 E1 USRE39261 E1 US RE39261E1 US 1456301 A US1456301 A US 1456301A US RE39261 E USRE39261 E US RE39261E
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- 229910000679 solder Inorganic materials 0.000 claims abstract description 19
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Images
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/10—Scanning systems
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
- G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
- G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
- G02B26/0841—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD the reflecting element being moved or deformed by electrostatic means
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
- G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
- G02B26/085—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD the reflecting means being moved or deformed by electromagnetic means
Definitions
- the present invention is related to “METHOD AND APPARATUS FOR AN INTEGRATED LASER BEAM SCANNER USING A CARRIER SUBSTRATE” by Floyd, Sun and Kubby (Attorney Docket No. D/98707), Ser. No. 09/203,442, filed on the same day and assigned to the same assignee which is hereby incorporated by reference in its entirety.
- the present invention relates generally to the field of laser beam scanning systems, and more particularly to micro-electro-mechanical systems (MEMS) for laser beam scanning.
- MEMS micro-electro-mechanical systems
- Miniature laser beam scanning systems are important for applications such as barcode scanning, machine vision and, most importantly, xerographic printing.
- ROS raster output scanning
- Advanced computation and control algorithms are used in managing the large arrays of scanning elements.
- Such MEMS based printing systems are entirely solid state, reducing complexity, and allowing increased functionality, including compensation of errors or failures in the scanner elements.
- An important step in constructing solid state scanning systems is integrating the semiconductor light emitter directly with MEMS actuators to gain the desired optical system simplification.
- Integrated scanners which have lasers and scanning mirrors in the same structure, have been demonstrated using manual placement of laser chips onto MEMS wafers with micromachined alignment parts and adhesives by L. Y. Lin et al in Applied Physics Letters, 66, p. 2946, 1995 and by M. J. Daneman et al in Photonics Technology Letters, 8(3), p. 396, 1996.
- current techniques do not allow wafer-scale integration of the light-emitter and MEMS device.
- a laser beam scanner consisting of a single crystal silicon (SCS) deflection and scanning mirror is integrated with a laser diode or light emitting diode.
- SCS single crystal silicon
- RIE deep reactive ion etching
- SOI silicon on insulator
- the present invention allows the integration of completed and tested light emitting devices directly with the MEMS actuators to gain the desired simplification of the optical system needed to realize solid state scanning systems.
- FIG. 1 shows an embodiment in accordance with this invention of an integrated solid state scanner and laser.
- FIG. 2 shows a top view of an embodiment in accordance with this invention.
- FIGS. 3a-3c show alternative embodiments in accordance with this invention of an integrated solid state scanner and laser.
- FIGS. 4a-4n show the processing steps for constructing an embodiment in accordance with this invention.
- a laser beam scanner consisting of a single crystal silicon (SCS) deflecting mirror 140 and torsional mirror 150 is integrated with laser diode or light emitting diode 105 .
- SCS single crystal silicon
- RIE deep reactive ion etching
- SOI silicon on insulator
- Electrical contact to laser 105 can be made in a variety of ways. Contact can be made by planar surface metallization, by wire bonding to the laser, through the polysilicon layer with solder bumps or some combination of each. Using solder bump bonding methods, completed and tested lasers 105 are bonded to layer phosphorus-doped glass (PSG) layer 119 in recess 135 . Deep RIE etching may be used to define recess 135 in the MEMS surface layers 130 and Si substrate 115 for subsequent laser chip 105 placement. Because of deep RIE recess 135 , laser diode solder bumps 110 can be passively aligned to wettable metal bonding pads 111 on substrate 115 .
- PSG layer phosphorus-doped glass
- RIE recess 135 allows for nearly coplanar laser chip 105 and Si surfaces. This allows simplification of the subsequent metallization steps and laser chip 105 does not interfere with the space used for the optical path.
- SCS layer 130 of SOI wafer 100 for the mirror material, rather than polysilicon film provides for the introduction of very flat and smooth mirrors 140 and 150 and high reliability torsion bars 170 .
- the device is easily scalable to arrays of lasers and scanning mirrors.
- the reflective surface of deflecting mirror 140 and torsional mirror 150 is typically coated with aluminum 430 (see FIGS. 4 e- 4 m).
- MEMS components such as single crystalline silicon (SCS) mirror 140 and torsional mirror 150 are formed in SCS layer 130 by using a combination of well-known surface and bulk micro-machining techniques.
- VCSEL vertical cavity surface emitting laser
- actuation electrodes 120 are formed on glass or SiO 2 coated silicon substrate 101 which is bonded to SCS substrate 115 after etching hole 117 (see FIG. 4 a).
- Typical thicknesses are 0.5 mm for SCS substrate 115 and glass or dielectric-coated (typically SiO 2 or SiN x ) Si substrate 101 .
- SCS substrate 115 has deep RIE and/or wet etched recess 135 for alignment and placement of VCSEL 105 on SCS layer 130 .
- VCSEL 105 typically has a divergence angle of about 14 degrees.
- Emitted light 199 then passes onto deflecting mirror 140 which reflects emitted light 199 onto torsional mirror 150 .
- SCS layer 130 is typically about 2-20 ⁇ m thick.
- the spot diameter of emitted light 199 at deflecting mirror 140 is typically about 234 ⁇ m and the spot diameter at torsional mirror 150 is typically about 480 ⁇ m.
- Polysilicon hinge 155 is micromachined from a deposited polysilicon layer and attaches deflecting mirror 140 to SOI substrate 115 .
- Polysilicon hinge 155 allows deflecting mirror 140 to rotate clockwise about an axis perpendicular to the plane of FIG. 1 , out of SCS layer 130 to a typical angle of about 30 degrees above recess 135 as shown in FIG. 1 .
- the distance between polysilicon hinge 155 and torsional mirror 150 is typically on the order of 1.1 mm.
- a typical length for deflecting mirror 140 is about 1 mm.
- Deflecting mirror 140 can be supported by support latch 168 controlled by a spring and latch assembly (not shown) in the manner described by Lin et al. in Photonics Technology Letters, 6(12), p.
- the length of support latch 168 is 100 ⁇ m. Controlling the position and length of support latch 168 allows the angle of deflecting mirror 140 with respect to SCS layer 130 to be precisely fixed, at for example, 30 degrees in the embodiment shown in FIG. 1 .
- Torsional mirror 150 is electrostatically actuated by actuation electrodes 120 to perform, for example, an optical scan.
- FIG. 2 shows a top view of one embodiment deflection mirror/torsional mirror solid state element. Hinge 155 and deflecting mirror 140 is shown along with hole 165 to receive the tab (not shown) on support latch 168 . The layout of torsional mirror 150 supported by torsion bar 170 with respect to hole 117 is also shown.
- FIG. 3a shows an alternative embodiment in accordance with the present invention which requires via 310 for laser beam 199 .
- Via 310 has a cross-sectional area much smaller than that of VCSEL 105 . This preserves SCS layer 130 and other MEMS layers opposite VCSEL 105 for potential use in forming MEMS devices.
- alignment recess 135 is on the back side of wafer 100 , opposite the surface MEMS layers.
- VCSEL chip 105 is solder bump bonded to wettable metal bonding pads 111 on PSG layer 119 on wafer 115 .
- Light passes through aperture 310 formed by wet etching and/or deep RIE.
- Torsional mirror 150 is electrostatically actuated by actuation electrodes 120 to perform, for example, an optical scan.
- FIG. 3b shows an alternative embodiment in accordance with the present invention similar to that shown in FIG. 1 .
- the embodiment shown in FIG. 3b has ferromagnetic thin film 330 deposited on torsional mirror 150 and thin film coil 340 deposited on glass or SiO 2 coated Si substrate 101 . Magnetization of ferromagnetic thin film 330 is in the plane of torsional mirror 150 so that magnetic field 320 generated by thin film coil 340 will actuate torsional mirror 150 .
- FIG. 3c shows an alternative embodiment in accordance with the present invention similar to that shown in FIG. 1 .
- the embodiment shown in FIG. 3c has microfabricated metal thin film coil 350 with a diameter approximately that of torsional mirror 150 deposited on torsional mirror 150 .
- Metal thin film coil 350 generates magnetic field 360 (shown for counterclockwise current flow in thin film coil 350 ) perpendicular to torsional mirror 150 when current is passed through thin film coil 350 .
- external magnetic field 370 parallel to torsional mirror 150 is present.
- torsional mirror 150 will rotate to the left or to the right in FIG. 3c to minimize the misalignment between magnetic field 360 and magnetic field 370 .
- FIGS. 4a-4j Steps for fabricating deflecting mirror, supporting latch and VCSEL in accordance with this invention are shown in FIGS. 4a-4j .
- the starting material used as a substrate is typically a silicon on insulator (SOI) wafer.
- SOI silicon on insulator
- Such silicon wafers are commercially available from several manufactures such as Bondtronix, Inc. of Alamo, Calif. and Ibis Technology Corporation of Danvers, Mass.
- the thickness of SCS layer 130 is chosen to be 2-20 ⁇ m depending on the stiffness that is required of the torsional spring elements and the mirror surfaces to be constructed from MEMS layer 130 .
- Other mechanical layers are deposited on top of SOI wafer 100 by well-known methods such as Low Pressure Chemical Vapor Deposition (LPCVD).
- LPCVD Low Pressure Chemical Vapor Deposition
- the deposited layer are mechanical layers of polycrystalline silicon (poly) and a sacrificial oxide layer that is phosphorus-doped glass (PSG).
- PSG phosphorus-doped glass
- Aluminum can be deposited by sputtering or thermal evaporation.
- FIG. 4c shows PSG layer 119 of 1-2 ⁇ m thickness directly on top of MEMS layer 130 of SOI wafer 100 .
- FIGS. 4a-n show the processing steps used to fabricate deflecting mirror 140 , supporting latch 168 and VCSEL 105 in an embodiment in accordance with this invention.
- Supporting latch 168 has a tab (not shown) which inserts into corresponding hole 165 (see FIG. 2 ) in deflecting mirror 140 .
- Deflecting mirror 140 and supporting latch 168 are defined by reactive ion etching (RIE) using CF 4 with 4-10 percent O 2 during the etching steps.
- RIE reactive ion etching
- the completed deflecting mirror 140 and supporting latch 168 configuration is shown in FIG. 4 n.
- the typical size of deflecting mirror 140 is in the range of 0.5-1.0 mm square.
- FIG. 4a has SiN x layer (not shown) deposited on SOI wafer 100 by LPCVD.
- SiN x layer is patterned using CF 4 /O 2 RIE with a photoresist mask to form a mask for KOH (potassium hydroxide) etching of Si.
- KOH etching is used to etch hole 117 from the bottom of SOI wafer 100 , stopping on insulator layer 116 of SOI wafer 100 .
- the dimensions of etched hole 117 will be comparable to that of torsional mirror 150 to allow free rotation of torsional mirror 150 .
- etched hole 117 may be defined by deep RIE using C 4 F 8 and SF 6 with a SiN x or photoresist mask.
- FIG. 4b shows SOI wafer 100 with recess 135 (200-250 ⁇ m deep) etched into SOI wafer 100 using a combination of CF 4 /O 2 RIE for MEMS layer 130 and insulator layer 116 and deep RIE using C 4 F 8 and SF 6 in substrate 115 .
- FIG. 4c shows chemical vapor deposition (CVD) of phosphorus-doped glass (PSG) 119 .
- FIG. 4d shows a wet etch using hydrofluoric acid of windows 410 and 420 in PSG layer 119 .
- FIG. 4e shows deposition of aluminum film 430 (0.1-0.2 ⁇ m) as a high reflectivity layer.
- FIG. 4f shows a wet etch (typically a mixture of phosphoric and nitric acid) Al to leave Al in mirror regions.
- a wet etch typically a mixture of phosphoric and nitric acid
- FIG. 4g shows etching of vias 133 to Si substrate 115 using CF 4 /O 2 RIE with a photoresist mask.
- FIG. 4h shows the deposited polysilicon layer of 1-2 ⁇ m thickness after being patterned to form hinge 155 for deflecting mirror 140 .
- Patterning of polysilicon hinges 155 is described in Wu, “Micromachining for Optical and Optoelectronic Systems”, Proceedings of IEEE, vol. 85, p.1833, 1997 and Pister et al., “Microfabricated hinges”, Sensors and Actuators, A: Physica v 33 n 3 p. 249-256, 1992 which are hereby incorporated by reference in their entirety. If the RIE etching step is done before deposition of the polysilicon layer, the polysilicon can be deposited in etched recess 135 to reduce surface roughness due to the etching.
- FIG. 4i shows the etch of PSG layer 119 and SCS layer 130 to pattern deflecting mirror 140 , hinge 155 and access holes 137 .
- Holes 137 allow for the etchant used to release deflecting mirror 140 to reach insulating layer 116 .
- a typical size for holes 137 is 10 ⁇ m by 10 ⁇ m.
- Torsional mirror 150 is also defined in this step. Typical size for torsional mirror 150 in accordance with this invention is in the range of 1-2 mm square.
- FIG. 4j shows the Ti—Au deposition of wettable metal bonding pads 111 and solder for solder bumps 110 . Solder is reflowed into solder bumps 110 by heating at temperatures ⁇ 310° C. This leaves the finished, unreleased MEMS parts, along with precisely defined recess 135 , ready for the GaAs bonding step in FIG. 4 .
- FIG. 4k shows release of deflecting mirror 140 and hinge 155 by etching PSG layer 119 and insulator layer 116 by using a hydrofluoric (HF) based etch.
- HF hydrofluoric
- FIG. 4l shows placement of VCSEL 105 (thickness from 100-125 ⁇ m) into recess 135 for the GaAs bonding step.
- Solder bumps 110 can be defined on VCSEL 105 and VCSEL 105 is placed into recess 135 which approximately aligns the bumps to wettable metal bonding pads 111 and 113 due to the coordinated geometry of VCSEL 105 , recess 135 , wettable metal bonding pad 111 and solder bump 110 positions.
- Si Substrate 115 and VCSEL substrate 106 are heated to allow solder to flow and contact wettable metal bonding pads 113 on the bottom of VCSEL substrate 106 .
- FIG. 4m shows hinges 155 , deflecting mirror 140 , torsional mirror 150 and VCSEL 105 bonded to glass substrate 101 or to SiN x -coated or SiO 2 -coated Si substrate 101 .
- Substrate 101 supports actuation electrodes 120 for torsional mirror 150 .
- FIG. 4n shows raised deflecting mirror 140 locked with latch 168 .
- Angle of deflecting mirror 140 is fixed by the length of latch 168 and position of hole 165 at base of deflecting mirror 140 .
- Linear arrays of lasers can be bonded in a similar way; the extent of the array being perpendicular to the cross section shown in FIGS. 3a and 3b .
Abstract
Description
Claims (32)
Priority Applications (1)
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US10/014,563 USRE39261E1 (en) | 1998-12-01 | 2001-12-14 | Method and apparatus for an integrated laser beam scanner |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US09/201,738 US6002507A (en) | 1998-12-01 | 1998-12-01 | Method and apparatus for an integrated laser beam scanner |
US10/014,563 USRE39261E1 (en) | 1998-12-01 | 2001-12-14 | Method and apparatus for an integrated laser beam scanner |
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US09/201,738 Reissue US6002507A (en) | 1998-12-01 | 1998-12-01 | Method and apparatus for an integrated laser beam scanner |
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US10/014,563 Expired - Lifetime USRE39261E1 (en) | 1998-12-01 | 2001-12-14 | Method and apparatus for an integrated laser beam scanner |
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Cited By (4)
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US20060261357A1 (en) * | 2005-05-18 | 2006-11-23 | Ching-Fu Tsou | Array-type modularized light-emitting diode structure and a method for packaging the structure |
US7329942B2 (en) * | 2005-05-18 | 2008-02-12 | Ching-Fu Tsou | Array-type modularized light-emitting diode structure and a method for packaging the structure |
US20120122256A1 (en) * | 2010-11-11 | 2012-05-17 | Advanced Optoelectronic Technology, Inc. | Method for manufacturing light emitting diode |
US8530252B2 (en) * | 2010-11-11 | 2013-09-10 | Advanced Optoelectronic Technology, Inc. | Method for manufacturing light emitting diode |
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