USRE34425E - Method and apparatus for mechanical planarization and endpoint detection of a semiconductor wafer - Google Patents

Method and apparatus for mechanical planarization and endpoint detection of a semiconductor wafer Download PDF

Info

Publication number
USRE34425E
USRE34425E US07/876,588 US87658892A USRE34425E US RE34425 E USRE34425 E US RE34425E US 87658892 A US87658892 A US 87658892A US RE34425 E USRE34425 E US RE34425E
Authority
US
United States
Prior art keywords
wafer
polishing
polishing platen
platen
peripheral edge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US07/876,588
Inventor
Laurence D. Schultz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Technology Inc
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US07/563,054 external-priority patent/US5081796A/en
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Priority to US07/876,588 priority Critical patent/USRE34425E/en
Application granted granted Critical
Publication of USRE34425E publication Critical patent/USRE34425E/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/013—Devices or means for detecting lapping completion
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means

Definitions

  • This invention relates to the fabrication of integrated circuits and more particularly to a novel method and apparatus for mechanical planarization and endpoint detection of a semiconductor wafer.
  • a side of a part such as a thin flat wafer of a semiconductor material.Iadd.. .Iaddend.
  • a semiconductor wafer can be polished to remove topography, surface defects such as crystal lattice damage, scratches, roughness, or embedded particles of dirt or dust.
  • This polishing process is often referred to as mechanical planarization and is utilized to improve the quality and reliability of semiconductor devices. This process is usually performed during the formation of various devices and integrated circuits on the wafer.
  • the mechanical planarization process involves holding or rotating a thin flat wafer of semiconductor material against a wetted polishing surface under a controlled pressure or temperature.
  • a polishing slurry such as a solution of alumina or silica is utilized as the abrasive medium.
  • a rotating polishing head is typically utilized to hold the wafer under controlled pressure against a rotating polishing platen.
  • the polishing platen is typically covered with a relatively soft wetted material such as blown polyurethane.
  • a particular problem encountered in the use of such polishing apparatus is in the determination that a part has been planed to a desired flatness or relative thickness. In the past, this typically has been accomplished by control of the rotational speed, downward pressure, and polishing time of the planarization process. As a final step, however, the part typically must be mechanically removed from the polishing apparatus and physically measured by techniques known in the art to ascertain dimensional and planar characteristics of the polished part. If the part does not meet specification, it must be loaded back into the polishing apparatus and planarized a second time. Alternately, the part may have been subjected to too much polishing and an excess of material may have been removed, rendering the part as substandard.
  • the semiconductor wafer may be subjected to spacially non-uniform planarization due to the relative velocity differential between the outer peripheral portions and the interior portions of the rotating semiconductor wafer.
  • the faster moving peripheral portions of the semiconductor wafer may, for instance, experience a relatively larger rate of material removal than the relatively slower moving interior portions.
  • this problem has been approached by the use of a polishing head having a generally convex shape to impart a greater force on the interior portions of the semiconductor disc and a lesser force along the outer peripheral portions.
  • planarization problems are compounded because the semiconductor wafer is held face down against the polishing platen: and, absent removing the semiconductor disc, there is no provision for monitoring the polishing process.
  • the present invention is directed to a novel method and apparatus for endpoint detection of a semiconductor wafer which can be accomplished during the planarization process.
  • the apparatus of the invention generally stated comprises: polishing means in the form of a rotatable polishing platen and a polishing slurry; a rotatable polishing head adapted for carrying a semiconductor wafer and mounted for movement across and past the outer circumference of the polishing platen for overhanging or supporting a portion less than the entire semiconductor wafer on the polishing platen; and endpoint detection means in the form of a laser interferometer measuring device for detecting the thickness of a material to be planarized, such as an oxide formed on the semiconductor wafer.
  • the apparatus is adapted to detect the endpoint of a semiconductor wafer or portion thereof by a method which generally comprises the steps of: rotating the semiconductor wafer through a polishing slurry on a polishing platen; overhanging a portion of the semiconductor wafer over the peripheral edge of the polishing platen; and detecting, using laser interferometry and a laser beam contained in a column of liquid, the thickness of a portion of the semiconductor wafer such as an oxide coating of the wafer.
  • a part to be mechanically planarized such as a semiconductor wafer
  • the polishing head is mounted for rotation in a polishing slurry and for movement across a generally circular polishing platen.
  • the polishing platen may also be rotated preferably in the same direction as the polishing head.
  • the polishing head is adapted to be moved across and past the outer circumferential edge of the polishing platen and overhang the peripheral edge of the polishing platen.
  • Overhanging the semiconductor wafer across the edge of the polishing platen exposes the polished surface of the wafer and permits endpoint detection means, such as a laser interferometer measuring device, to be directed at the wafer surface to determine the endpoint.
  • the endpoint detection may detect the thickness of a portion of the wafer such as an oxide (i.e. silicide) surface of the wafer or an edge thickness of the wafer.
  • the laser detection means is preferably pulsed in synchronization with a marker on the wafer such as an unpatterned die.
  • the unpatterned die may include a metallic film having a silicide coating.
  • the laser can be directed at the unpatterned die to detect the thickness of the silicide at the point.
  • Other reference points at other locations on the disc can also be utilized to obtain an average thickness across the wafer.
  • the laser detection means of the invention is preferably contained within a column of liquid to clean the wafer of polishing slurry or the like at the point of measurement and to provide a uniform liquid reference medium for the laser beam.
  • FIG. 1 is a plan view of a thin flat semiconductor wafer suitable for mechanical planarization by the method and apparatus of the invention
  • FIG. 2 is a side elevation view of a mechanical planarization apparatus with endpoint detection constructed in accordance with the invention
  • FIG. 3 is a schematic plan view showing relative rotation movement and positioning of a polishing head constructed in accordance with the invention with respect to a rotating polishing platen;
  • FIG. 4 is a cross-sectional view taken along section line 4--4 of FIG. 2;
  • FIG. 5 is a cross-sectional view taken along section line 5--5 of FIG. 1;
  • FIG. 6 is a schematic flow diagram of the method of the invention.
  • the semiconductor wafer 10 is thin and flat, generally circular in shape, and is formed with a micro topography.
  • the semiconductor wafer may include a substrate such as silicon or oxidized silicon on which a plurality of individual integrated circuit dies are formed. These individual dies are represented schematically by the criss-cross pattern in FIG. 1.
  • the formation of integrated circuits requires the deposition of various films such as metal film contacts and resistive and dielectric films on the wafer substrate.
  • various films such as metal film contacts and resistive and dielectric films
  • This planarization process helps to minimize barriers to multilayer formation and metallization. Additionally, the planarization process smooths, flattens, and cleans the surface of the wafer.
  • the wafer 10 in a certain area, may include a silicon substrate 12 on which a layer of silicon dioxide (SiO 2 ) 14 (hereinafter referred to as oxide) is formed thereon.
  • a layer of silicon dioxide (SiO 2 ) 14 hereinafter referred to as oxide
  • mechanical planarization of the wafer 10 involves planarization of the oxide layer 14 of the wafer 10.
  • the wafer 10 may also include one or more unpatterned dies 16 of a metallic film such as tungsten formed on the silicon substrate 12 and covered with the oxide coating 14.
  • the apparatus 20 of the invention in general comprises:
  • polishing means in the form of a rotating polishing platen 22 to which an abrasive slurry 24 such as alumina is applied:
  • a rotatable polishing head 26 adapted for supporting the semiconductor wafer 10 and mounted as shown in FIG. 3, for movement across and past the peripheral edge of the rotating polishing platen 22 for overhanging a portion less than the entire semiconductor wafer 10 on the rotating polishing platen 22;
  • endpoint detection means in the form of a laser interferometer measuring device 28 for detecting the thickness of an oxide coating 14 or the like formed on the semiconductor wafer 10.
  • the apparatus 20 of the invention is adapted to detect the thickness of the oxide coating 14 or the like on the wafer 10 by a process which includes the steps of:
  • step 34 detecting, using a laser interferometer measuring device 28 having a laser beam contained in a column of liquid, the thickness of the oxide coating 14 on a blank die 16 of the wafer 10, step 34.
  • the polishing means may include the polishing head 26 which is mounted to a rotational drive means such as a drive motor 36. As shown in FIG. 3, the drive motor 36 imparts a rotary motion indicated by arrow 38 to the polishing head 26.
  • the polishing head 26 is constructed, as is known in the art, to hold and rotate the wafer 10 face down over the polishing platen 22, without damaging the wafer 10.
  • the polishing head 26 is constructed to impart a controlled downward force as indicated by arrow 39 (FIG. 2) to the wafer 10.
  • the polishing head 26 is also mounted for transverse movement in either direction across the polishing platen 22 as indicated by arrows 40,42 in FIG. 3 and arrow 41 in FIG. 2. Further, the polishing head 26 is mounted with respect to the polishing platen 22 such that the wafer 10 can be moved across the polishing platen 22 and held in an overhanging position with respect to the outer circumferential peripheral edge of the polishing platen 22. This is clearly shown in FIG. 2. With this arrangement and as is critical to the practice of the invention, the wafer 10 can be moved past the edge of the polishing platen 22 to overhang the outer circumferential or peripheral edge of the polishing platen 22 during the mechanical planarization process.
  • This overhanging arrangement permits the wafer 10 to be moved on and off the polishing platen 22 to compensate for polishing irregularities caused by the relative velocity differential between the faster moving outer portions and the slower moving inner portions of the generally circular shaped wafer 10. Additionally, with this arrangement, a portion of the face of the wafer 10, as shown in FIG. 2, is exposed to the laser interferonmeter measuring device 28 for endpoint detection as will hereinafter be more fully explained.
  • the polishing platen 22 is also mounted for rotational motion in the same direction as the polishing head 26. This motion is denoted by arrows 44,46 in FIG. 3.
  • the surface of the polishing platen may be formed of a relatively soft material such as blown polyurethane. Additionally, this surface may be wetted with a lubricant such as water.
  • the abrasive slurry 24 is directed onto the surface of the polishing platen 22 to provide an abrasive medium for polishing the wafer 10.
  • the slurry 24 may be formed of a solution of an abrasive material such as alumina or silica.
  • the endpoint detection means of the invention comprises a laser interferometer measuring device 28.
  • the interferometer measuring device 28 employs the interference of light waves for purposes of measurement.
  • the interferometer measuring device 28 is mounted to detect the thickness of the oxide layer 14 of the wafer 10 in the area of an unpatterned die 16 on the wafer 10.
  • the laser interferometer measuring device may also be arranged to detect the edge thickness of the wafer 10 or other features of the wafer 10.
  • the laser interferometer measuring device 28 includes a laser light beam 48 and a light return conduit 50 which extend from a laser control unit 54 to a suitable mount (not shown ) located in close proximity to the exposed surface of the wafer 10.
  • the interferometer measuring device 28 functions to direct and return a beam of laser light 48 or radiation against the oxide 14 located on the unpatterned die 16 of the wafer 10 to accurately measure the thickness of the oxide coating 14 at that point. This can be done by laser techniques known to those skilled in the art.
  • a liquid conduit 52 directs a liquid such as water onto the oxide surface 14 at the point of measurement by the laser beam 48 on the wafer 10.
  • the liquid medium completely surrounds or encloses the laser light beam 48.
  • This liquid .[.54.]. functions to clean the surface of the wafer 10 at the point of laser measurement and to provide a constant liquid reference background or medium for obtaining the laser measurement.
  • the apparatus and method of the invention thus provide for mechanical planarization of a semiconductor wafer with means for accurately detecting the endpoint of the surface or oxide thickness of the semiconductor wafer during the planarization operation. As is apparent from the foregoing description, this is accomplished by detecting an oxide thickness at a predetermined reference point (i.e unpatterned die). Other reference points on the wafer may also be utilized. Additionally, other types of measuring devices or multiple laser measuring devices and/or multiple reference points can also be utilized to obtain an average thickness.

Abstract

A method and apparatus for mechanical planarization and endpoint detection of a semiconductor wafer or the like. The apparatus includes a polishing head for rotating the wafer under a controlled pressure against a rotating polishing platen. The polishing head is mounted such that the wafer can be moved across the polishing platen to overhang a peripheral edge of the polishing platen and expose the surface of the wafer. Endpoint detection apparatus in the form of a laser interferometer measuring device is directed at an unpatterned die on the exposed surface of the wafer to detect oxide thickness at that point. The laser light beam is enclosed in a column of liquid to clean the wafer surface at the point of detection and to provide a uniform reference medium for the laser light beam.

Description

FIELD OF THE INVENTION
This invention relates to the fabrication of integrated circuits and more particularly to a novel method and apparatus for mechanical planarization and endpoint detection of a semiconductor wafer.
BACKGROUND OF THE INVENTION
In the fabrication of integrated circuits (ICs), it is often necessary to polish a side of a part such as a thin flat wafer of a semiconductor material.Iadd.. .Iaddend.In general, a semiconductor wafer can be polished to remove topography, surface defects such as crystal lattice damage, scratches, roughness, or embedded particles of dirt or dust. This polishing process is often referred to as mechanical planarization and is utilized to improve the quality and reliability of semiconductor devices. This process is usually performed during the formation of various devices and integrated circuits on the wafer.
In general, the mechanical planarization process involves holding or rotating a thin flat wafer of semiconductor material against a wetted polishing surface under a controlled pressure or temperature. A polishing slurry such as a solution of alumina or silica is utilized as the abrasive medium. A rotating polishing head is typically utilized to hold the wafer under controlled pressure against a rotating polishing platen. The polishing platen is typically covered with a relatively soft wetted material such as blown polyurethane.
Such apparatus for polishing thin flat semiconductor wafers are well known in the art. U.S. Pat. Nos. 4,193,226 and 4,811,522 to Gill, Jr. and U.S. Pat. No. 3,841,031 to Walsh, for instance, disclose such apparatus.
A particular problem encountered in the use of such polishing apparatus is in the determination that a part has been planed to a desired flatness or relative thickness. In the past, this typically has been accomplished by control of the rotational speed, downward pressure, and polishing time of the planarization process. As a final step, however, the part typically must be mechanically removed from the polishing apparatus and physically measured by techniques known in the art to ascertain dimensional and planar characteristics of the polished part. If the part does not meet specification, it must be loaded back into the polishing apparatus and planarized a second time. Alternately, the part may have been subjected to too much polishing and an excess of material may have been removed, rendering the part as substandard.
Additionally, the semiconductor wafer may be subjected to spacially non-uniform planarization due to the relative velocity differential between the outer peripheral portions and the interior portions of the rotating semiconductor wafer. The faster moving peripheral portions of the semiconductor wafer may, for instance, experience a relatively larger rate of material removal than the relatively slower moving interior portions. In the past, this problem has been approached by the use of a polishing head having a generally convex shape to impart a greater force on the interior portions of the semiconductor disc and a lesser force along the outer peripheral portions.
These planarization problems are compounded because the semiconductor wafer is held face down against the polishing platen: and, absent removing the semiconductor disc, there is no provision for monitoring the polishing process.
In general, there is a need in the mechanical planarization of semiconductor wafers to be able to detect or monitor the endpoint of the planarized wafer while the planarization process is in operation. The present invention is directed to a novel method and apparatus for endpoint detection of a semiconductor wafer which can be accomplished during the planarization process.
SUMMARY OF THE INVENTION
In accordance with the present invention, a novel method and apparatus for mechanical planarization and endpoint detection of a thin flat semiconductor wafer is provided. The apparatus of the invention generally stated comprises: polishing means in the form of a rotatable polishing platen and a polishing slurry; a rotatable polishing head adapted for carrying a semiconductor wafer and mounted for movement across and past the outer circumference of the polishing platen for overhanging or supporting a portion less than the entire semiconductor wafer on the polishing platen; and endpoint detection means in the form of a laser interferometer measuring device for detecting the thickness of a material to be planarized, such as an oxide formed on the semiconductor wafer.
The apparatus is adapted to detect the endpoint of a semiconductor wafer or portion thereof by a method which generally comprises the steps of: rotating the semiconductor wafer through a polishing slurry on a polishing platen; overhanging a portion of the semiconductor wafer over the peripheral edge of the polishing platen; and detecting, using laser interferometry and a laser beam contained in a column of liquid, the thickness of a portion of the semiconductor wafer such as an oxide coating of the wafer.
In use of the method and apparatus of the invention, a part to be mechanically planarized, such as a semiconductor wafer, is placed in a polishing head. The polishing head is mounted for rotation in a polishing slurry and for movement across a generally circular polishing platen. The polishing platen may also be rotated preferably in the same direction as the polishing head. The polishing head is adapted to be moved across and past the outer circumferential edge of the polishing platen and overhang the peripheral edge of the polishing platen.
Overhanging the semiconductor wafer across the edge of the polishing platen exposes the polished surface of the wafer and permits endpoint detection means, such as a laser interferometer measuring device, to be directed at the wafer surface to determine the endpoint. The endpoint detection may detect the thickness of a portion of the wafer such as an oxide (i.e. silicide) surface of the wafer or an edge thickness of the wafer.
The laser detection means is preferably pulsed in synchronization with a marker on the wafer such as an unpatterned die. As an example, the unpatterned die may include a metallic film having a silicide coating. The laser can be directed at the unpatterned die to detect the thickness of the silicide at the point. Other reference points at other locations on the disc can also be utilized to obtain an average thickness across the wafer.
The laser detection means of the invention is preferably contained within a column of liquid to clean the wafer of polishing slurry or the like at the point of measurement and to provide a uniform liquid reference medium for the laser beam.
Other objects, advantages, and capabilities of the present invention will become more apparent as the description proceeds.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is a plan view of a thin flat semiconductor wafer suitable for mechanical planarization by the method and apparatus of the invention;
FIG. 2 is a side elevation view of a mechanical planarization apparatus with endpoint detection constructed in accordance with the invention;
FIG. 3 is a schematic plan view showing relative rotation movement and positioning of a polishing head constructed in accordance with the invention with respect to a rotating polishing platen;
FIG. 4 is a cross-sectional view taken along section line 4--4 of FIG. 2;
FIG. 5 is a cross-sectional view taken along section line 5--5 of FIG. 1; and
FIG. 6 is a schematic flow diagram of the method of the invention.
DETAILED DESCRIPTION OF THE INVENTION
Referring now to FIG. 1, a semiconductor wafer 10 suitable for mechanical planarization in accordance with the method and apparatus of the invention is shown. The semiconductor wafer 10 is thin and flat, generally circular in shape, and is formed with a micro topography. The semiconductor wafer may include a substrate such as silicon or oxidized silicon on which a plurality of individual integrated circuit dies are formed. These individual dies are represented schematically by the criss-cross pattern in FIG. 1.
The formation of integrated circuits requires the deposition of various films such as metal film contacts and resistive and dielectric films on the wafer substrate. During fabrication of the wafer 10, it may be necessary to mechanically planarize the surface of the wafer in order, for instance, to provide a planarized topography for definition of these films. This planarization process helps to minimize barriers to multilayer formation and metallization. Additionally, the planarization process smooths, flattens, and cleans the surface of the wafer.
As shown in cross-section in FIG. 5, the wafer 10, in a certain area, may include a silicon substrate 12 on which a layer of silicon dioxide (SiO2) 14 (hereinafter referred to as oxide) is formed thereon. In general, mechanical planarization of the wafer 10 involves planarization of the oxide layer 14 of the wafer 10. The wafer 10 may also include one or more unpatterned dies 16 of a metallic film such as tungsten formed on the silicon substrate 12 and covered with the oxide coating 14.
Referring now to FIG. 2, a mechanical planarization and endpoint detection apparatus constructed in accordance with the invention is shown and generally designated as 20. The apparatus 20 of the invention in general comprises:
polishing means in the form of a rotating polishing platen 22 to which an abrasive slurry 24 such as alumina is applied:
a rotatable polishing head 26 adapted for supporting the semiconductor wafer 10 and mounted as shown in FIG. 3, for movement across and past the peripheral edge of the rotating polishing platen 22 for overhanging a portion less than the entire semiconductor wafer 10 on the rotating polishing platen 22; and
endpoint detection means in the form of a laser interferometer measuring device 28 for detecting the thickness of an oxide coating 14 or the like formed on the semiconductor wafer 10.
With reference to FIG. 6, the apparatus 20 of the invention is adapted to detect the thickness of the oxide coating 14 or the like on the wafer 10 by a process which includes the steps of:
rotating the wafer 10 in a polishing slurry 24 on a polishing platen 22, step 30;
overhanging a portion of the wafer 10 over a peripheral edge of the polishing platen 22, step 32; and
detecting, using a laser interferometer measuring device 28 having a laser beam contained in a column of liquid, the thickness of the oxide coating 14 on a blank die 16 of the wafer 10, step 34.
With reference to FIGS. 2 and 3, the polishing means may include the polishing head 26 which is mounted to a rotational drive means such as a drive motor 36. As shown in FIG. 3, the drive motor 36 imparts a rotary motion indicated by arrow 38 to the polishing head 26. The polishing head 26 is constructed, as is known in the art, to hold and rotate the wafer 10 face down over the polishing platen 22, without damaging the wafer 10. Moreover, the polishing head 26 is constructed to impart a controlled downward force as indicated by arrow 39 (FIG. 2) to the wafer 10.
In addition to rotary and up-and-down movement, the polishing head 26 is also mounted for transverse movement in either direction across the polishing platen 22 as indicated by arrows 40,42 in FIG. 3 and arrow 41 in FIG. 2. Further, the polishing head 26 is mounted with respect to the polishing platen 22 such that the wafer 10 can be moved across the polishing platen 22 and held in an overhanging position with respect to the outer circumferential peripheral edge of the polishing platen 22. This is clearly shown in FIG. 2. With this arrangement and as is critical to the practice of the invention, the wafer 10 can be moved past the edge of the polishing platen 22 to overhang the outer circumferential or peripheral edge of the polishing platen 22 during the mechanical planarization process.
This overhanging arrangement permits the wafer 10 to be moved on and off the polishing platen 22 to compensate for polishing irregularities caused by the relative velocity differential between the faster moving outer portions and the slower moving inner portions of the generally circular shaped wafer 10. Additionally, with this arrangement, a portion of the face of the wafer 10, as shown in FIG. 2, is exposed to the laser interferonmeter measuring device 28 for endpoint detection as will hereinafter be more fully explained.
As shown in FIG. 3, the polishing platen 22 is also mounted for rotational motion in the same direction as the polishing head 26. This motion is denoted by arrows 44,46 in FIG. 3. The surface of the polishing platen may be formed of a relatively soft material such as blown polyurethane. Additionally, this surface may be wetted with a lubricant such as water.
As shown in FIG. 2, the abrasive slurry 24 is directed onto the surface of the polishing platen 22 to provide an abrasive medium for polishing the wafer 10. The slurry 24 may be formed of a solution of an abrasive material such as alumina or silica.
With reference to FIGS. 2 and 4, the endpoint detection means of the invention is clearly shown. In the illustrative embodiment of the invention, the endpoint detection means comprises a laser interferometer measuring device 28. The interferometer measuring device 28 employs the interference of light waves for purposes of measurement. In the illustrative embodiment of the invention, the interferometer measuring device 28 is mounted to detect the thickness of the oxide layer 14 of the wafer 10 in the area of an unpatterned die 16 on the wafer 10. Alternately, the laser interferometer measuring device may also be arranged to detect the edge thickness of the wafer 10 or other features of the wafer 10.
As shown in FIG. 3, the laser interferometer measuring device 28 includes a laser light beam 48 and a light return conduit 50 which extend from a laser control unit 54 to a suitable mount (not shown ) located in close proximity to the exposed surface of the wafer 10. As is apparent in the illustrative embodiment of the invention, the interferometer measuring device 28 functions to direct and return a beam of laser light 48 or radiation against the oxide 14 located on the unpatterned die 16 of the wafer 10 to accurately measure the thickness of the oxide coating 14 at that point. This can be done by laser techniques known to those skilled in the art.
Further, and as shown in FIG. 4, a liquid conduit 52 directs a liquid such as water onto the oxide surface 14 at the point of measurement by the laser beam 48 on the wafer 10. As shown in FIG. 4, the liquid medium completely surrounds or encloses the laser light beam 48. This liquid .[.54.]. functions to clean the surface of the wafer 10 at the point of laser measurement and to provide a constant liquid reference background or medium for obtaining the laser measurement.
The apparatus and method of the invention thus provide for mechanical planarization of a semiconductor wafer with means for accurately detecting the endpoint of the surface or oxide thickness of the semiconductor wafer during the planarization operation. As is apparent from the foregoing description, this is accomplished by detecting an oxide thickness at a predetermined reference point (i.e unpatterned die). Other reference points on the wafer may also be utilized. Additionally, other types of measuring devices or multiple laser measuring devices and/or multiple reference points can also be utilized to obtain an average thickness.
While the process of the invention has been described with reference to a preferred embodiment, as will be apparent to those skilled in the art, certain changes and modifications can be made without departing from the scope of the invention as defined by the following claims.

Claims (24)

I claim:
1. A process for polishing a flat wafer comprising:
a. holding the wafer in a rotatable polishing head mounted for movement across and over a peripheral edge of a polishing platen;
b. rotating a surface of the wafer in a polishing slurry across the polishing platen;
c. overhanging a portion of the wafer across a peripheral edge of the polishing platen to expose a surface of the wafer; and
d. detecting using endpoint detection means an endpoint of the wafer.
2. A process as claimed in claim 1 and wherein the endpoint detection means comprises a laser interferometer measuring device.
3. A process as claimed in claim 2 and wherein the laser interferometer measuring device is situated to detect the thickness of an oxide on the wafer located on an unpatterned die on the wafer.
4. A process as claimed in claim 3 and wherein the polishing platen is also rotatably mounted for rotation in the same direction .[.a.]..Iadd.as .Iaddend.the polishing head.
5. A process as claimed in claim 3 and further comprising:
directing a column of liquid on the wafer for cleaning the wafer and for providing a reference medium for the laser.
6. A process for polishing a thin flat semiconductor wafer having an oxide surface comprising:
a. holding the semiconductor wafer in a rotatable polishing head mounted for movement across and over a peripheral edge of a polishing platen;
b. rotating the wafer in a polishing slurry across the polishing platen;
c. overhanging a portion of the wafer across a peripheral edge of the polishing platen to expose a surface of the wafer; and
d. detecting a thickness of the oxide coating of the wafer utilizing a laser detection apparatus having a detecting laser beam enclosed in a column of water and directed at an unpatterned die on the wafer surface.
7. The process as claimed in claim 6 and further comprising:
rotating the polishing platen in the same direction as the polishing head.
8. The process as claimed in claim 6 and further comprising:
moving the polishing head across the peripheral edge of the polishing platen to compensate for a velocity differential between different portions of the rotating wafer.
9. The process as claimed in claim 8 and wherein:
the wafer, polishing head, and polishing platen are each generally circular in shape.
10. The process as claimed in claim 8 and wherein: the unpatterned die includes a metallic film having an oxide coating thereon.
11. A process for polishing a thin flat generally circular shaped semiconductor wafer having an oxide coating and for detecting the thickness of the oxide coating, comprising:
a. holding the semiconductor wafer in a rotatable polishing head;
b. rotating the semiconductor wafer over a rotating polishing platen under pressure from the polishing head in a polishing slurry;
c. overhanging a portion of a surface of the semiconductor wafer over the polishing platen to expose the surface for endpoint detection of an oxide on the semiconductor wafer;
d. directing a laser beam enclosed in a column of liquid at an unpatterned die on the wafer, for detecting using laser interferometry a thickness of an oxide coating on the wafer; and
e. moving the wafer across the peripheral edge of the polishing platen for overhanging the wafer and for compensating for velocity differentials on different portions of the generally circular shaped wafer.
12. The process as claimed in claim 11 and wherein:
the semiconductor wafer is formed of silicon having a silicide surface and the unpatterned die includes a tungsten film with an oxide coating.
13. Apparatus for mechanically planarizing a thin flat wafer comprising:
a. polishing means including a polishing platen and an abrasive slurry;
b. a polishing head for holding the wafer and mounted for rotating and for moving the wafer across the polishing platen and past a peripheral edge of the polishing platen under a controlled pressure; and
c. endpoint detection means including a laser interferometer with a laser beam contained in a column of liquid for detecting an endpoint on an exposed surface of the wafer.
14. Apparatus as claimed in claim 13 and wherein:
the polishing platen is rotated in the same direction as said polishing head.
15. Apparatus as claimed in claim 14 and wherein:
the laser interferometer detection device includes a laser light beam, a return light conduit, and a liquid conduit which is arranged to direct a liquid at the exposed surface of the wafer to surround the laser light beam and clean a surface of the wafer and to provide a uniform reference medium for the laser light beam.
16. Apparatus as claimed in claim 15 and wherein:
the laser light beam is directed at an unpatterned die on the wafer.
17. Apparatus as claimed in claim 16 and wherein:
the unpatterned die includes a metallic film having an oxide coating formed thereon.
18. Apparatus as claimed in claim 17 and wherein:
said metallic film is tungsten and said oxide film is a silicide.
19. Apparatus for mechanically planarizing a thin flat semiconductor wafer comprising:
a. polishing means including a rotating generally circular shaped polishing platen and an abrasive slurry;
b. a polishing head for holding the semiconductor wafer and mounted for rotation and for moving the wafer across a peripheral circumferential edge of the polishing platen under a controlled pressure to expose a surface of the wafer; and
c. endpoint detection means including a laser interferometer measuring device having a laser light beam directed at an unpatterned die on the surface of the wafer and including a control unit, a light return conduit, and a liquid conduit circumjacent to the laser light beam for directing a liquid at the wafer surface to clean the surface and provide a reference medium for the laser light beam.
20. Apparatus as claimed in claim 19 and wherein:
said unpatterned die includes a metallic film coated with an oxide.
21. Apparatus as claimed in claim 19 and wherein:
said polishing platen is rotated in the same direction as the polishing head.
22. Apparatus as claimed in claim 21 and wherein:
said liquid for surrounding the laser light beam is water. .Iadd.
23. A process for polishing a flat wafer comprising:
a. holding a wafer in a rotatable polishing head mounted for movement across and over a peripheral edge of a polishing platen;
b. rotating a surface of the wafer in a polishing slurry across the polishing platen; and
c. overhanging a portion of the wafer across a peripheral edge of the polishing platen to expose a surface of the wafer. .Iaddend. .Iadd.24. A process as claimed in claim 23 wherein the polishing platen is also rotatably mounted for rotation in the same direction as the polishing head. .Iaddend. .Iadd.25. A process as claimed in claim 23 further comprising:
moving the polishing head across the peripheral edge of the polishing platen to compensate for a velocity differential between different portions of the rotating wafer. .Iaddend. .Iadd.26. A process as claimed in claim 23 further comprising overhanging approximately one-half of the wafer across the peripheral edge of the polishing platen. .Iaddend.
.Iadd. 7. A process as claimed in claim 23 wherein:
the wafer, polishing head, and polishing platen are each generally circular in shape. .Iaddend. .Iadd.28. A process for polishing a thin flat generally circular shaped semiconductor wafer having an oxide coating comprising:
a. holding a semiconductor wafer in a rotatable polishing head;
b. rotating the semiconductor wafer over a rotating polishing platen under pressure from the polishing head in a polishing slurry; and
c. moving the wafer across a peripheral edge of the polishing platen for overhanging the wafer and for compensating for velocity differentials on different portions of the generally circular shaped wafer. .Iaddend. .Iadd.29. A process as claimed in claim 28 further comprising moving approximately one-half of the wafer across the peripheral edge of the polishing platen. .Iaddend.
US07/876,588 1990-08-06 1992-04-30 Method and apparatus for mechanical planarization and endpoint detection of a semiconductor wafer Expired - Lifetime USRE34425E (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US07/876,588 USRE34425E (en) 1990-08-06 1992-04-30 Method and apparatus for mechanical planarization and endpoint detection of a semiconductor wafer

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/563,054 US5081796A (en) 1990-08-06 1990-08-06 Method and apparatus for mechanical planarization and endpoint detection of a semiconductor wafer
US07/876,588 USRE34425E (en) 1990-08-06 1992-04-30 Method and apparatus for mechanical planarization and endpoint detection of a semiconductor wafer

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
US07/563,054 Reissue US5081796A (en) 1990-08-06 1990-08-06 Method and apparatus for mechanical planarization and endpoint detection of a semiconductor wafer

Publications (1)

Publication Number Publication Date
USRE34425E true USRE34425E (en) 1993-11-02

Family

ID=27073157

Family Applications (1)

Application Number Title Priority Date Filing Date
US07/876,588 Expired - Lifetime USRE34425E (en) 1990-08-06 1992-04-30 Method and apparatus for mechanical planarization and endpoint detection of a semiconductor wafer

Country Status (1)

Country Link
US (1) USRE34425E (en)

Cited By (61)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5461007A (en) * 1994-06-02 1995-10-24 Motorola, Inc. Process for polishing and analyzing a layer over a patterned semiconductor substrate
US5582534A (en) * 1993-12-27 1996-12-10 Applied Materials, Inc. Orbital chemical mechanical polishing apparatus and method
US5650039A (en) * 1994-03-02 1997-07-22 Applied Materials, Inc. Chemical mechanical polishing apparatus with improved slurry distribution
US5659492A (en) * 1996-03-19 1997-08-19 International Business Machines Corporation Chemical mechanical polishing endpoint process control
EP0806266A2 (en) * 1996-05-09 1997-11-12 Canon Kabushiki Kaisha Polishing method and polishing apparatus using the same
US5733171A (en) * 1996-07-18 1998-03-31 Speedfam Corporation Apparatus for the in-process detection of workpieces in a CMP environment
US5846882A (en) * 1996-10-03 1998-12-08 Applied Materials, Inc. Endpoint detector for a chemical mechanical polishing system
US5872633A (en) * 1996-07-26 1999-02-16 Speedfam Corporation Methods and apparatus for detecting removal of thin film layers during planarization
US6179690B1 (en) 1993-11-16 2001-01-30 Applied Materials, Inc. Substrate polishing apparatus
US6203407B1 (en) 1998-09-03 2001-03-20 Micron Technology, Inc. Method and apparatus for increasing-chemical-polishing selectivity
US6213844B1 (en) 1999-03-26 2001-04-10 Speedfam-Ipec Corporation Method for obtaining a desired film thickness using chemical mechanical polishing
US6217410B1 (en) 1996-07-26 2001-04-17 Speedfam-Ipec Corporation Apparatus for cleaning workpiece surfaces and monitoring probes during workpiece processing
US6251785B1 (en) 1995-06-02 2001-06-26 Micron Technology, Inc. Apparatus and method for polishing a semiconductor wafer in an overhanging position
US6269510B1 (en) 1999-01-04 2001-08-07 International Business Machines Corporation Post CMP clean brush with torque monitor
US6319093B1 (en) 2001-02-06 2001-11-20 International Business Machines Corporation Chemical-mechanical polishing system and method for integrated spin dry-film thickness measurement
US6334807B1 (en) 1999-04-30 2002-01-01 International Business Machines Corporation Chemical mechanical polishing in-situ end point system
US6368881B1 (en) 2000-02-29 2002-04-09 International Business Machines Corporation Wafer thickness control during backside grind
US6375544B1 (en) 1999-02-26 2002-04-23 Micron Technology, Inc. System and method for reducing surface defects integrated in circuits
US6393681B1 (en) 2001-01-19 2002-05-28 Magnecomp Corp. PZT microactuator processing
US6426232B1 (en) 1993-09-16 2002-07-30 Luxtron Corporation Optical techniques of measuring endpoint during the processing of material layers in an optically hostile environment
US20020127496A1 (en) * 2000-08-31 2002-09-12 Blalock Guy T. Methods and apparatuses for making and using planarizing pads for mechanical and chemical-mechanical planarization of microelectronic substrates
US6511576B2 (en) 1999-11-17 2003-01-28 Micron Technology, Inc. System for planarizing microelectronic substrates having apertures
US6533893B2 (en) 1999-09-02 2003-03-18 Micron Technology, Inc. Method and apparatus for chemical-mechanical planarization of microelectronic substrates with selected planarizing liquids
US6548407B1 (en) 2000-04-26 2003-04-15 Micron Technology, Inc. Method and apparatus for controlling chemical interactions during planarization of microelectronic substrates
US6570662B1 (en) 1999-05-24 2003-05-27 Luxtron Corporation Optical techniques for measuring layer thicknesses and other surface characteristics of objects such as semiconductor wafers
US6593238B1 (en) 2000-11-27 2003-07-15 Motorola, Inc. Method for determining an endpoint and semiconductor wafer
US6612901B1 (en) 2000-06-07 2003-09-02 Micron Technology, Inc. Apparatus for in-situ optical endpointing of web-format planarizing machines in mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies
US6628410B2 (en) 1996-02-16 2003-09-30 Micron Technology, Inc. Endpoint detector and method for measuring a change in wafer thickness in chemical-mechanical polishing of semiconductor wafers and other microelectronic substrates
US20030205779A1 (en) * 1988-05-31 2003-11-06 Protigal Stanley N. Semiconductor device system with impedance matching of control signals
US20030232576A1 (en) * 2000-07-05 2003-12-18 Norio Kimura Apparatus for polishing a substrate
US20040038623A1 (en) * 2002-08-26 2004-02-26 Nagasubramaniyan Chandrasekaran Methods and systems for conditioning planarizing pads used in planarizing substrates
US6722943B2 (en) 2001-08-24 2004-04-20 Micron Technology, Inc. Planarizing machines and methods for dispensing planarizing solutions in the processing of microelectronic workpieces
US6833046B2 (en) 2000-05-04 2004-12-21 Micron Technology, Inc. Planarizing machines and methods for mechanical and/or chemical-mechanical planarization of microelectronic-device substrate assemblies
US20050037694A1 (en) * 2002-07-08 2005-02-17 Taylor Theodore M. Retaining rings, planarizing apparatuses including retaining rings, and methods for planarizing micro-device workpieces
US6860798B2 (en) 2002-08-08 2005-03-01 Micron Technology, Inc. Carrier assemblies, planarizing apparatuses including carrier assemblies, and methods for planarizing micro-device workpieces
US6872132B2 (en) 2003-03-03 2005-03-29 Micron Technology, Inc. Systems and methods for monitoring characteristics of a polishing pad used in polishing micro-device workpieces
US20050079804A1 (en) * 2003-10-09 2005-04-14 Taylor Theodore M. Planarizing solutions including abrasive elements, and methods for manufacturing and using such planarizing solutions
US6884152B2 (en) 2003-02-11 2005-04-26 Micron Technology, Inc. Apparatuses and methods for conditioning polishing pads used in polishing micro-device workpieces
US6922253B2 (en) 2000-08-30 2005-07-26 Micron Technology, Inc. Planarizing machines and control systems for mechanical and/or chemical-mechanical planarization of microelectronic substrates
US6934040B1 (en) 1999-05-24 2005-08-23 Luxtron Corporation Optical techniques for measuring layer thicknesses and other surface characteristics of objects such as semiconductor wafers
US6935929B2 (en) 2003-04-28 2005-08-30 Micron Technology, Inc. Polishing machines including under-pads and methods for mechanical and/or chemical-mechanical polishing of microfeature workpieces
US6958001B2 (en) 2002-08-23 2005-10-25 Micron Technology, Inc. Carrier assemblies, planarizing apparatuses including carrier assemblies, and methods for planarizing micro-device workpieces
US6969306B2 (en) 2002-03-04 2005-11-29 Micron Technology, Inc. Apparatus for planarizing microelectronic workpieces
US7030603B2 (en) 2003-08-21 2006-04-18 Micron Technology, Inc. Apparatuses and methods for monitoring rotation of a conductive microfeature workpiece
US7033251B2 (en) 2003-01-16 2006-04-25 Micron Technology, Inc. Carrier assemblies, polishing machines including carrier assemblies, and methods for polishing micro-device workpieces
US7033253B2 (en) 2004-08-12 2006-04-25 Micron Technology, Inc. Polishing pad conditioners having abrasives and brush elements, and associated systems and methods
US7066792B2 (en) 2004-08-06 2006-06-27 Micron Technology, Inc. Shaped polishing pads for beveling microfeature workpiece edges, and associate system and methods
US7086927B2 (en) 2004-03-09 2006-08-08 Micron Technology, Inc. Methods and systems for planarizing workpieces, e.g., microelectronic workpieces
US7094695B2 (en) 2002-08-21 2006-08-22 Micron Technology, Inc. Apparatus and method for conditioning a polishing pad used for mechanical and/or chemical-mechanical planarization
US7101252B2 (en) 2002-04-26 2006-09-05 Applied Materials Polishing method and apparatus
US7115016B2 (en) 2002-08-29 2006-10-03 Micron Technology, Inc. Apparatus and method for mechanical and/or chemical-mechanical planarization of micro-device workpieces
US7131891B2 (en) 2003-04-28 2006-11-07 Micron Technology, Inc. Systems and methods for mechanical and/or chemical-mechanical polishing of microfeature workpieces
US7182669B2 (en) 2002-07-18 2007-02-27 Micron Technology, Inc. Methods and systems for planarizing workpieces, e.g., microelectronic workpieces
US7264539B2 (en) 2005-07-13 2007-09-04 Micron Technology, Inc. Systems and methods for removing microfeature workpiece surface defects
US7294049B2 (en) 2005-09-01 2007-11-13 Micron Technology, Inc. Method and apparatus for removing material from microfeature workpieces
US7326105B2 (en) 2005-08-31 2008-02-05 Micron Technology, Inc. Retaining rings, and associated planarizing apparatuses, and related methods for planarizing micro-device workpieces
US20080227367A1 (en) * 1995-03-28 2008-09-18 Applied Materials, Inc. Substrate polishing metrology using interference signals
US7438626B2 (en) 2005-08-31 2008-10-21 Micron Technology, Inc. Apparatus and method for removing material from microfeature workpieces
US7754612B2 (en) 2007-03-14 2010-07-13 Micron Technology, Inc. Methods and apparatuses for removing polysilicon from semiconductor workpieces
US8795029B2 (en) 1995-03-28 2014-08-05 Applied Materials, Inc. Apparatus and method for in-situ endpoint detection for semiconductor processing operations
US11244838B2 (en) * 2016-09-13 2022-02-08 Tokyo Electron Limited Substrate processing apparatus and substrate processing method of controlling discharge angle and discharge position of processing liquid supplied to peripheral portion of substrate

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3156073A (en) * 1963-01-15 1964-11-10 Ray H Strasbaugh Irregular, non-repetitive, closed-loop surfacing mechanism
US3564776A (en) * 1969-04-16 1971-02-23 Itek Corp Optical surface generating method and apparatus
US3841031A (en) * 1970-10-21 1974-10-15 Monsanto Co Process for polishing thin elements
US4083272A (en) * 1976-12-14 1978-04-11 The United States Of America As Represented By The United States Department Of Energy Omega-X micromachining system
US4193226A (en) * 1977-09-21 1980-03-18 Kayex Corporation Polishing apparatus
US4365301A (en) * 1980-09-12 1982-12-21 The United States Of America As Represented By The United States Department Of Energy Positional reference system for ultraprecision machining
JPS61164773A (en) * 1985-01-18 1986-07-25 Hitachi Ltd Method and device for grinding wafer
JPS63256342A (en) * 1987-04-10 1988-10-24 Sumitomo Electric Ind Ltd Method for grinding semiconductor wafer
US4811522A (en) * 1987-03-23 1989-03-14 Gill Jr Gerald L Counterbalanced polishing apparatus
US4930262A (en) * 1987-12-19 1990-06-05 Maschinenfabrik Ernst Thielenhaus Gmbh Control system for surface grinding of like workpiece blanks
JPH03121773A (en) * 1989-10-06 1991-05-23 Nippon Steel Corp Polishing method for high flatness of silicon wafer

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3156073A (en) * 1963-01-15 1964-11-10 Ray H Strasbaugh Irregular, non-repetitive, closed-loop surfacing mechanism
US3564776A (en) * 1969-04-16 1971-02-23 Itek Corp Optical surface generating method and apparatus
US3841031A (en) * 1970-10-21 1974-10-15 Monsanto Co Process for polishing thin elements
US4083272A (en) * 1976-12-14 1978-04-11 The United States Of America As Represented By The United States Department Of Energy Omega-X micromachining system
US4193226A (en) * 1977-09-21 1980-03-18 Kayex Corporation Polishing apparatus
US4365301A (en) * 1980-09-12 1982-12-21 The United States Of America As Represented By The United States Department Of Energy Positional reference system for ultraprecision machining
JPS61164773A (en) * 1985-01-18 1986-07-25 Hitachi Ltd Method and device for grinding wafer
US4811522A (en) * 1987-03-23 1989-03-14 Gill Jr Gerald L Counterbalanced polishing apparatus
JPS63256342A (en) * 1987-04-10 1988-10-24 Sumitomo Electric Ind Ltd Method for grinding semiconductor wafer
US4930262A (en) * 1987-12-19 1990-06-05 Maschinenfabrik Ernst Thielenhaus Gmbh Control system for surface grinding of like workpiece blanks
JPH03121773A (en) * 1989-10-06 1991-05-23 Nippon Steel Corp Polishing method for high flatness of silicon wafer

Cited By (134)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030205779A1 (en) * 1988-05-31 2003-11-06 Protigal Stanley N. Semiconductor device system with impedance matching of control signals
US20040061198A1 (en) * 1988-05-31 2004-04-01 Protigal Stanley N. Integrated circuit module having on-chip surge capacitors
US6426232B1 (en) 1993-09-16 2002-07-30 Luxtron Corporation Optical techniques of measuring endpoint during the processing of material layers in an optically hostile environment
US6179690B1 (en) 1993-11-16 2001-01-30 Applied Materials, Inc. Substrate polishing apparatus
US5582534A (en) * 1993-12-27 1996-12-10 Applied Materials, Inc. Orbital chemical mechanical polishing apparatus and method
US5650039A (en) * 1994-03-02 1997-07-22 Applied Materials, Inc. Chemical mechanical polishing apparatus with improved slurry distribution
US5691253A (en) * 1994-06-02 1997-11-25 Motorola, Inc. Process for polishing and analyzing an exposed surface of a patterned semiconductor
US5461007A (en) * 1994-06-02 1995-10-24 Motorola, Inc. Process for polishing and analyzing a layer over a patterned semiconductor substrate
US8092274B2 (en) 1995-03-28 2012-01-10 Applied Materials, Inc. Substrate polishing metrology using interference signals
US7731566B2 (en) * 1995-03-28 2010-06-08 Applied Materials, Inc. Substrate polishing metrology using interference signals
US8556679B2 (en) 1995-03-28 2013-10-15 Applied Materials, Inc. Substrate polishing metrology using interference signals
US20110070808A1 (en) * 1995-03-28 2011-03-24 Manoocher Birang Substrate polishing metrology using interference signals
US20080227367A1 (en) * 1995-03-28 2008-09-18 Applied Materials, Inc. Substrate polishing metrology using interference signals
US7841926B2 (en) 1995-03-28 2010-11-30 Applied Materials, Inc. Substrate polishing metrology using interference signals
US8795029B2 (en) 1995-03-28 2014-08-05 Applied Materials, Inc. Apparatus and method for in-situ endpoint detection for semiconductor processing operations
US20100240281A1 (en) * 1995-03-28 2010-09-23 Applied Materials, Inc. Substrate polishing metrology using interference signals
US6251785B1 (en) 1995-06-02 2001-06-26 Micron Technology, Inc. Apparatus and method for polishing a semiconductor wafer in an overhanging position
US6628410B2 (en) 1996-02-16 2003-09-30 Micron Technology, Inc. Endpoint detector and method for measuring a change in wafer thickness in chemical-mechanical polishing of semiconductor wafers and other microelectronic substrates
US5659492A (en) * 1996-03-19 1997-08-19 International Business Machines Corporation Chemical mechanical polishing endpoint process control
EP0806266A3 (en) * 1996-05-09 1998-12-09 Canon Kabushiki Kaisha Polishing method and polishing apparatus using the same
EP0806266A2 (en) * 1996-05-09 1997-11-12 Canon Kabushiki Kaisha Polishing method and polishing apparatus using the same
US5733171A (en) * 1996-07-18 1998-03-31 Speedfam Corporation Apparatus for the in-process detection of workpieces in a CMP environment
US6217410B1 (en) 1996-07-26 2001-04-17 Speedfam-Ipec Corporation Apparatus for cleaning workpiece surfaces and monitoring probes during workpiece processing
US5872633A (en) * 1996-07-26 1999-02-16 Speedfam Corporation Methods and apparatus for detecting removal of thin film layers during planarization
US5846882A (en) * 1996-10-03 1998-12-08 Applied Materials, Inc. Endpoint detector for a chemical mechanical polishing system
US6325702B2 (en) 1998-09-03 2001-12-04 Micron Technology, Inc. Method and apparatus for increasing chemical-mechanical-polishing selectivity
US6203407B1 (en) 1998-09-03 2001-03-20 Micron Technology, Inc. Method and apparatus for increasing-chemical-polishing selectivity
US6269510B1 (en) 1999-01-04 2001-08-07 International Business Machines Corporation Post CMP clean brush with torque monitor
US6352596B2 (en) 1999-01-04 2002-03-05 International Business Machines Corporation Post CMP cleaning method using a brush cleaner with torque monitor
US6497612B2 (en) 1999-02-26 2002-12-24 Micron Technology, Inc. System and method for reducing surface defects in integrated circuits
US20030013383A1 (en) * 1999-02-26 2003-01-16 Micron Technology, Inc. System and method for reducing surface defects in integrated circuits
US6375544B1 (en) 1999-02-26 2002-04-23 Micron Technology, Inc. System and method for reducing surface defects integrated in circuits
US20060003678A1 (en) * 1999-02-26 2006-01-05 Micron Technology, Inc. System and method for reducing surface defects in integrated circuits
US7097546B2 (en) 1999-02-26 2006-08-29 Micron Technology, Inc. System and method for reducing surface defects in integrated circuits
US6935926B2 (en) 1999-02-26 2005-08-30 Micron Technology, Inc. System and method for reducing surface defects in integrated circuits
US6213844B1 (en) 1999-03-26 2001-04-10 Speedfam-Ipec Corporation Method for obtaining a desired film thickness using chemical mechanical polishing
US6334807B1 (en) 1999-04-30 2002-01-01 International Business Machines Corporation Chemical mechanical polishing in-situ end point system
US6570662B1 (en) 1999-05-24 2003-05-27 Luxtron Corporation Optical techniques for measuring layer thicknesses and other surface characteristics of objects such as semiconductor wafers
US6934040B1 (en) 1999-05-24 2005-08-23 Luxtron Corporation Optical techniques for measuring layer thicknesses and other surface characteristics of objects such as semiconductor wafers
US7042581B2 (en) 1999-05-24 2006-05-09 Luxtron Corporation Optical techniques for measuring layer thicknesses and other surface characteristics of objects such as semiconductor wafers
US6654132B1 (en) 1999-05-24 2003-11-25 Luxtron Corporation Optical techniques for measuring layer thicknesses and other surface characteristics of objects such as semiconductor wafers
US6533893B2 (en) 1999-09-02 2003-03-18 Micron Technology, Inc. Method and apparatus for chemical-mechanical planarization of microelectronic substrates with selected planarizing liquids
US6511576B2 (en) 1999-11-17 2003-01-28 Micron Technology, Inc. System for planarizing microelectronic substrates having apertures
US7134933B2 (en) 2000-02-29 2006-11-14 International Business Machines Corporation Wafer thickness control during backside grind
US6368881B1 (en) 2000-02-29 2002-04-09 International Business Machines Corporation Wafer thickness control during backside grind
US6887126B2 (en) 2000-02-29 2005-05-03 International Business Machines Corporation Wafer thickness control during backside grind
US6548407B1 (en) 2000-04-26 2003-04-15 Micron Technology, Inc. Method and apparatus for controlling chemical interactions during planarization of microelectronic substrates
US6579799B2 (en) 2000-04-26 2003-06-17 Micron Technology, Inc. Method and apparatus for controlling chemical interactions during planarization of microelectronic substrates
US6833046B2 (en) 2000-05-04 2004-12-21 Micron Technology, Inc. Planarizing machines and methods for mechanical and/or chemical-mechanical planarization of microelectronic-device substrate assemblies
US6612901B1 (en) 2000-06-07 2003-09-02 Micron Technology, Inc. Apparatus for in-situ optical endpointing of web-format planarizing machines in mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies
US6986700B2 (en) 2000-06-07 2006-01-17 Micron Technology, Inc. Apparatuses for in-situ optical endpointing on web-format planarizing machines in mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies
US7229338B2 (en) 2000-06-07 2007-06-12 Micron Technology, Inc. Apparatuses and methods for in-situ optical endpointing on web-format planarizing machines in mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies
US7291057B2 (en) 2000-07-05 2007-11-06 Ebara Corporation Apparatus for polishing a substrate
US20030232576A1 (en) * 2000-07-05 2003-12-18 Norio Kimura Apparatus for polishing a substrate
US6922253B2 (en) 2000-08-30 2005-07-26 Micron Technology, Inc. Planarizing machines and control systems for mechanical and/or chemical-mechanical planarization of microelectronic substrates
US6758735B2 (en) 2000-08-31 2004-07-06 Micron Technology, Inc. Methods and apparatuses for making and using planarizing pads for mechanical and chemical-mechanical planarization of microelectronic substrates
US20020127496A1 (en) * 2000-08-31 2002-09-12 Blalock Guy T. Methods and apparatuses for making and using planarizing pads for mechanical and chemical-mechanical planarization of microelectronic substrates
US7037179B2 (en) 2000-08-31 2006-05-02 Micron Technology, Inc. Methods and apparatuses for making and using planarizing pads for mechanical and chemical-mechanical planarization of microelectronic substrates
US6652764B1 (en) 2000-08-31 2003-11-25 Micron Technology, Inc. Methods and apparatuses for making and using planarizing pads for mechanical and chemical-mechanical planarization of microelectronic substrates
US6746317B2 (en) 2000-08-31 2004-06-08 Micron Technology, Inc. Methods and apparatuses for making and using planarizing pads for mechanical and chemical mechanical planarization of microelectronic substrates
US6593238B1 (en) 2000-11-27 2003-07-15 Motorola, Inc. Method for determining an endpoint and semiconductor wafer
US6393681B1 (en) 2001-01-19 2002-05-28 Magnecomp Corp. PZT microactuator processing
US6319093B1 (en) 2001-02-06 2001-11-20 International Business Machines Corporation Chemical-mechanical polishing system and method for integrated spin dry-film thickness measurement
US7210989B2 (en) 2001-08-24 2007-05-01 Micron Technology, Inc. Planarizing machines and methods for dispensing planarizing solutions in the processing of microelectronic workpieces
US6722943B2 (en) 2001-08-24 2004-04-20 Micron Technology, Inc. Planarizing machines and methods for dispensing planarizing solutions in the processing of microelectronic workpieces
US6969306B2 (en) 2002-03-04 2005-11-29 Micron Technology, Inc. Apparatus for planarizing microelectronic workpieces
US7121921B2 (en) 2002-03-04 2006-10-17 Micron Technology, Inc. Methods for planarizing microelectronic workpieces
US7131889B1 (en) 2002-03-04 2006-11-07 Micron Technology, Inc. Method for planarizing microelectronic workpieces
US7101252B2 (en) 2002-04-26 2006-09-05 Applied Materials Polishing method and apparatus
US20060228991A1 (en) * 2002-04-26 2006-10-12 Applied Materials, Inc. A Delaware Corporation Polishing method and apparatus
US20050037694A1 (en) * 2002-07-08 2005-02-17 Taylor Theodore M. Retaining rings, planarizing apparatuses including retaining rings, and methods for planarizing micro-device workpieces
US7189153B2 (en) 2002-07-08 2007-03-13 Micron Technology, Inc. Retaining rings, planarizing apparatuses including retaining rings, and methods for planarizing micro-device workpieces
US6869335B2 (en) 2002-07-08 2005-03-22 Micron Technology, Inc. Retaining rings, planarizing apparatuses including retaining rings, and methods for planarizing micro-device workpieces
US6962520B2 (en) 2002-07-08 2005-11-08 Micron Technology, Inc. Retaining rings, planarizing apparatuses including retaining rings, and methods for planarizing micro-device workpieces
US7604527B2 (en) 2002-07-18 2009-10-20 Micron Technology, Inc. Methods and systems for planarizing workpieces, e.g., microelectronic workpieces
US7182669B2 (en) 2002-07-18 2007-02-27 Micron Technology, Inc. Methods and systems for planarizing workpieces, e.g., microelectronic workpieces
US7341502B2 (en) 2002-07-18 2008-03-11 Micron Technology, Inc. Methods and systems for planarizing workpieces, e.g., microelectronic workpieces
US6860798B2 (en) 2002-08-08 2005-03-01 Micron Technology, Inc. Carrier assemblies, planarizing apparatuses including carrier assemblies, and methods for planarizing micro-device workpieces
US6893332B2 (en) 2002-08-08 2005-05-17 Micron Technology, Inc. Carrier assemblies, planarizing apparatuses including carrier assemblies, and methods for planarizing micro-device workpieces
US7094695B2 (en) 2002-08-21 2006-08-22 Micron Technology, Inc. Apparatus and method for conditioning a polishing pad used for mechanical and/or chemical-mechanical planarization
US7004817B2 (en) 2002-08-23 2006-02-28 Micron Technology, Inc. Carrier assemblies, planarizing apparatuses including carrier assemblies, and methods for planarizing micro-device workpieces
US6958001B2 (en) 2002-08-23 2005-10-25 Micron Technology, Inc. Carrier assemblies, planarizing apparatuses including carrier assemblies, and methods for planarizing micro-device workpieces
US7147543B2 (en) 2002-08-23 2006-12-12 Micron Technology, Inc. Carrier assemblies, planarizing apparatuses including carrier assemblies, and methods for planarizing micro-device workpieces
US7011566B2 (en) 2002-08-26 2006-03-14 Micron Technology, Inc. Methods and systems for conditioning planarizing pads used in planarizing substrates
US7314401B2 (en) 2002-08-26 2008-01-01 Micron Technology, Inc. Methods and systems for conditioning planarizing pads used in planarizing substrates
US20040038623A1 (en) * 2002-08-26 2004-02-26 Nagasubramaniyan Chandrasekaran Methods and systems for conditioning planarizing pads used in planarizing substrates
US7235000B2 (en) 2002-08-26 2007-06-26 Micron Technology, Inc. Methods and systems for conditioning planarizing pads used in planarizing substrates
US7163439B2 (en) 2002-08-26 2007-01-16 Micron Technology, Inc. Methods and systems for conditioning planarizing pads used in planarizing substrates
US7201635B2 (en) 2002-08-26 2007-04-10 Micron Technology, Inc. Methods and systems for conditioning planarizing pads used in planarizing substrates
US7115016B2 (en) 2002-08-29 2006-10-03 Micron Technology, Inc. Apparatus and method for mechanical and/or chemical-mechanical planarization of micro-device workpieces
US7074114B2 (en) 2003-01-16 2006-07-11 Micron Technology, Inc. Carrier assemblies, polishing machines including carrier assemblies, and methods for polishing micro-device workpieces
US7033251B2 (en) 2003-01-16 2006-04-25 Micron Technology, Inc. Carrier assemblies, polishing machines including carrier assemblies, and methods for polishing micro-device workpieces
US7255630B2 (en) 2003-01-16 2007-08-14 Micron Technology, Inc. Methods of manufacturing carrier heads for polishing micro-device workpieces
US7997958B2 (en) 2003-02-11 2011-08-16 Micron Technology, Inc. Apparatuses and methods for conditioning polishing pads used in polishing micro-device workpieces
US7708622B2 (en) 2003-02-11 2010-05-04 Micron Technology, Inc. Apparatuses and methods for conditioning polishing pads used in polishing micro-device workpieces
US20100197204A1 (en) * 2003-02-11 2010-08-05 Micron Technology, Inc. Apparatuses and methods for conditioning polishing pads used in polishing micro-device workpieces
US6884152B2 (en) 2003-02-11 2005-04-26 Micron Technology, Inc. Apparatuses and methods for conditioning polishing pads used in polishing micro-device workpieces
US7033248B2 (en) 2003-03-03 2006-04-25 Micron Technology, Inc. Systems and methods for monitoring characteristics of a polishing pad used in polishing micro-device workpieces
US7070478B2 (en) 2003-03-03 2006-07-04 Micron Technology, Inc. Systems and methods for monitoring characteristics of a polishing pad used in polishing micro-device workpieces
US7258596B2 (en) 2003-03-03 2007-08-21 Micron Technology, Inc. Systems and methods for monitoring characteristics of a polishing pad used in polishing micro-device workpieces
US6872132B2 (en) 2003-03-03 2005-03-29 Micron Technology, Inc. Systems and methods for monitoring characteristics of a polishing pad used in polishing micro-device workpieces
US7033246B2 (en) 2003-03-03 2006-04-25 Micron Technology, Inc. Systems and methods for monitoring characteristics of a polishing pad used in polishing micro-device workpieces
US7357695B2 (en) 2003-04-28 2008-04-15 Micron Technology, Inc. Systems and methods for mechanical and/or chemical-mechanical polishing of microfeature workpieces
US7131891B2 (en) 2003-04-28 2006-11-07 Micron Technology, Inc. Systems and methods for mechanical and/or chemical-mechanical polishing of microfeature workpieces
US6935929B2 (en) 2003-04-28 2005-08-30 Micron Technology, Inc. Polishing machines including under-pads and methods for mechanical and/or chemical-mechanical polishing of microfeature workpieces
US7176676B2 (en) 2003-08-21 2007-02-13 Micron Technology, Inc. Apparatuses and methods for monitoring rotation of a conductive microfeature workpiece
US7030603B2 (en) 2003-08-21 2006-04-18 Micron Technology, Inc. Apparatuses and methods for monitoring rotation of a conductive microfeature workpiece
US20050239382A1 (en) * 2003-10-09 2005-10-27 Micron Technology, Inc. Planarizing solutions including abrasive elements, and methods for manufacturing and using such planarizing solutions
US7223297B2 (en) 2003-10-09 2007-05-29 Micron Technology, Inc. Planarizing solutions including abrasive elements, and methods for manufacturing and using such planarizing solutions
US20050079804A1 (en) * 2003-10-09 2005-04-14 Taylor Theodore M. Planarizing solutions including abrasive elements, and methods for manufacturing and using such planarizing solutions
US6939211B2 (en) 2003-10-09 2005-09-06 Micron Technology, Inc. Planarizing solutions including abrasive elements, and methods for manufacturing and using such planarizing solutions
US7413500B2 (en) 2004-03-09 2008-08-19 Micron Technology, Inc. Methods for planarizing workpieces, e.g., microelectronic workpieces
US7416472B2 (en) 2004-03-09 2008-08-26 Micron Technology, Inc. Systems for planarizing workpieces, e.g., microelectronic workpieces
US7086927B2 (en) 2004-03-09 2006-08-08 Micron Technology, Inc. Methods and systems for planarizing workpieces, e.g., microelectronic workpieces
US7210985B2 (en) 2004-08-06 2007-05-01 Micron Technology, Inc. Shaped polishing pads for beveling microfeature workpiece edges, and associated systems and methods
US7210984B2 (en) 2004-08-06 2007-05-01 Micron Technology, Inc. Shaped polishing pads for beveling microfeature workpiece edges, and associated systems and methods
US7066792B2 (en) 2004-08-06 2006-06-27 Micron Technology, Inc. Shaped polishing pads for beveling microfeature workpiece edges, and associate system and methods
US7033253B2 (en) 2004-08-12 2006-04-25 Micron Technology, Inc. Polishing pad conditioners having abrasives and brush elements, and associated systems and methods
US7854644B2 (en) 2005-07-13 2010-12-21 Micron Technology, Inc. Systems and methods for removing microfeature workpiece surface defects
US7264539B2 (en) 2005-07-13 2007-09-04 Micron Technology, Inc. Systems and methods for removing microfeature workpiece surface defects
US7927181B2 (en) 2005-08-31 2011-04-19 Micron Technology, Inc. Apparatus for removing material from microfeature workpieces
US20090004951A1 (en) * 2005-08-31 2009-01-01 Micron Technology, Inc. Apparatus and method for removing material from microfeature workpieces
US7347767B2 (en) 2005-08-31 2008-03-25 Micron Technology, Inc. Retaining rings, and associated planarizing apparatuses, and related methods for planarizing micro-device workpieces
US7438626B2 (en) 2005-08-31 2008-10-21 Micron Technology, Inc. Apparatus and method for removing material from microfeature workpieces
US7326105B2 (en) 2005-08-31 2008-02-05 Micron Technology, Inc. Retaining rings, and associated planarizing apparatuses, and related methods for planarizing micro-device workpieces
US7294049B2 (en) 2005-09-01 2007-11-13 Micron Technology, Inc. Method and apparatus for removing material from microfeature workpieces
US8105131B2 (en) 2005-09-01 2012-01-31 Micron Technology, Inc. Method and apparatus for removing material from microfeature workpieces
US20100059705A1 (en) * 2005-09-01 2010-03-11 Micron Technology, Inc. Method and apparatus for removing material from microfeature workpieces
US7628680B2 (en) 2005-09-01 2009-12-08 Micron Technology, Inc. Method and apparatus for removing material from microfeature workpieces
US7754612B2 (en) 2007-03-14 2010-07-13 Micron Technology, Inc. Methods and apparatuses for removing polysilicon from semiconductor workpieces
US8071480B2 (en) 2007-03-14 2011-12-06 Micron Technology, Inc. Method and apparatuses for removing polysilicon from semiconductor workpieces
US20100267239A1 (en) * 2007-03-14 2010-10-21 Micron Technology, Inc. Method and apparatuses for removing polysilicon from semiconductor workpieces
US11244838B2 (en) * 2016-09-13 2022-02-08 Tokyo Electron Limited Substrate processing apparatus and substrate processing method of controlling discharge angle and discharge position of processing liquid supplied to peripheral portion of substrate
US11640911B2 (en) 2016-09-13 2023-05-02 Tokyo Electron Limited Substrate processing method of controlling discharge angle and discharge position of processing liquid supplied to peripheral portion of substrate

Similar Documents

Publication Publication Date Title
USRE34425E (en) Method and apparatus for mechanical planarization and endpoint detection of a semiconductor wafer
US5081796A (en) Method and apparatus for mechanical planarization and endpoint detection of a semiconductor wafer
US5196353A (en) Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer
EP1068047B1 (en) Apparatus and method for film thickness measurement integrated into a wafer load/unload unit
JP4484370B2 (en) Method for determining an end point for chemical mechanical polishing of a metal layer on a substrate and apparatus for polishing a metal layer of a substrate
US5948203A (en) Optical dielectric thickness monitor for chemical-mechanical polishing process monitoring
US6517414B1 (en) Method and apparatus for controlling a pad conditioning process of a chemical-mechanical polishing apparatus
US5486129A (en) System and method for real-time control of semiconductor a wafer polishing, and a polishing head
US5667424A (en) New chemical mechanical planarization (CMP) end point detection apparatus
US5655951A (en) Method for selectively reconditioning a polishing pad used in chemical-mechanical planarization of semiconductor wafers
US5801066A (en) Method and apparatus for measuring a change in the thickness of polishing pads used in chemical-mechanical planarization of semiconductor wafers
US6843706B2 (en) Polishing apparatus
US7306506B2 (en) In-situ chemical-mechanical planarization pad metrology using ultrasonic imaging
US5421769A (en) Apparatus for planarizing semiconductor wafers, and a polishing pad for a planarization apparatus
US5851135A (en) System for real-time control of semiconductor wafer polishing
JP4335459B2 (en) Method and apparatus for measuring substrate layer thickness during chemical mechanical polishing
US5975994A (en) Method and apparatus for selectively conditioning a polished pad used in planarizng substrates
US5036015A (en) Method of endpoint detection during chemical/mechanical planarization of semiconductor wafers
US5069002A (en) Apparatus for endpoint detection during mechanical planarization of semiconductor wafers
US6364752B1 (en) Method and apparatus for dressing polishing cloth
JP4369122B2 (en) Polishing pad and polishing pad manufacturing method
KR20010078154A (en) Endpoint monitoring with polishing rate change
CN101484979A (en) Method and apparatus for chemical mechanical polishing of large size wafer with capability of polishing individual die
US20050118839A1 (en) Chemical mechanical polish process control method using thermal imaging of polishing pad
US6213844B1 (en) Method for obtaining a desired film thickness using chemical mechanical polishing

Legal Events

Date Code Title Description
FPAY Fee payment

Year of fee payment: 4

REMI Maintenance fee reminder mailed
FPAY Fee payment

Year of fee payment: 8

FPAY Fee payment

Year of fee payment: 12