US8053791B2 - Structure of AC light-emitting diode dies - Google Patents

Structure of AC light-emitting diode dies Download PDF

Info

Publication number
US8053791B2
US8053791B2 US12/424,109 US42410909A US8053791B2 US 8053791 B2 US8053791 B2 US 8053791B2 US 42410909 A US42410909 A US 42410909A US 8053791 B2 US8053791 B2 US 8053791B2
Authority
US
United States
Prior art keywords
led
dies
micro
light
die
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related, expires
Application number
US12/424,109
Other versions
US20090218580A1 (en
Inventor
Ming-Te Lin
Fei-Chang Hwang
Chia-Tai Kuo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Epistar Corp
Original Assignee
Industrial Technology Research Institute ITRI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=35745778&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=US8053791(B2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Industrial Technology Research Institute ITRI filed Critical Industrial Technology Research Institute ITRI
Priority to US12/424,109 priority Critical patent/US8053791B2/en
Assigned to INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE reassignment INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: KUO, CHIA-TAI, HWANG, FEI-CHANG, LIN, MING-TE
Publication of US20090218580A1 publication Critical patent/US20090218580A1/en
Assigned to EPISTAR CORPORATION reassignment EPISTAR CORPORATION CHANGE OF NAME (SEE DOCUMENT FOR DETAILS). Assignors: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
Application granted granted Critical
Publication of US8053791B2 publication Critical patent/US8053791B2/en
Expired - Fee Related legal-status Critical Current
Adjusted expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • the invention relates to a structure of light-emitting diodes (LED), and particularly to a structure of LED dies with an alternating current (AC) loop (a structure of AC LED dies).
  • LED light-emitting diodes
  • AC alternating current
  • a light-emitting diode emits light based on its semi-conductive characteristics, in contrast to the heating light-emitting principle of a fluorescent lamp, and is thus called a cold light.
  • the LED provides a number of advantages such as high endurance, long lifetime, compactness, low power consumption and so forth. Furthermore, no pernicious material such as mercury is contained in the LED. Therefore, there are high expectations with respect to the LEDs for being a light source in daily life in the current lighting market.
  • prior LEDs are generally limited in their acceptable power levels. Most LEDs may be fed with only low DC voltages and may be damaged if high voltages or AC voltages are applied thereon. Because of this, a DC voltage conversion circuit is generally used to transform the external power supply used by such LEDs. In operating an LED by use of a low DC voltage, the LED has its characteristic curve of the current-voltage relation, as shown in FIG. 1A . As shown, when the voltage is forwardly applied, the LED is conducted and light is emitted there from. On the other hand, if a reverse voltage is applied, the LED breaks down and no light is emitted.
  • the LED is often connected in series or parallel with several such LEDs, such as those used in traffic light apparatuses such as stop light apparatuses.
  • the externally supplied AC voltage 11 is first reduced in its level by means of a conversion circuit 12 and then converted into a DC voltage corresponding thereto. Then the converted DC voltage is fed into a plurality of LEDs connected with one another in series or in parallel as mentioned above, in which LEDs cannot be used when reverse power is supplied.
  • the set of LEDs in which the damaged LED resides is also likely to become damaged and the whole of the loop formed with the damaged LED included is badly affected.
  • the number of LEDs connected in series is generally reduced as much as possible.
  • the total amount of wires used for these LEDs in a specific application is unavoidably increased and the power consumption increases correspondingly.
  • the voltage at an end of one of the wires is insufficient and thus causes uneven luminance of the LEDs.
  • circuit assembly and die manufacturing are two generally adopted solutions.
  • LED dies are manufactured as a matrix form and connections of the LED dies are arranged in the same orientation in series and in parallel. Although such LEDs may be operated with a high voltage, they may still not be applied with an AC voltage.
  • an arrangement for protection of breakdown of the LEDs is also provided by connecting a diode with the LEDs in a variety of combinations where the LEDs may also be arranged in mutually reverse orientations and connected with each other but should be disposed over a submount and then connected with the LED matrix in parallel.
  • the LED die 91 has a structure shown in FIG. 1B , and has an equivalent circuit shown in FIG.
  • FIG. 1C in which the LED 91 is connected in parallel with two mutually oriented Zener diodes 92 and 93 , or a connection may be provided to form a loop as shown in FIG. 1D .
  • the current-voltage relation curves corresponding to the equivalent circuits in FIG. 1C and FIG. 1D are shown in FIG. 1E and FIG. 1F respectively.
  • the LED dies are also manufactured as a matrix form while the LEDs are oriented the same and connected in series. Although the LEDs may be operated with a high voltage, they also have the problem of not being capable of operation with AC voltage.
  • An object of the invention is therefore to provide a structure of light-emitting diode (LED) dies having an alternating current (AC) loop abbreviated as a structure of AC LED dies, on which an AC power supply may be applied directly to considerably broaden applicable range.
  • LED light-emitting diode
  • AC alternating current
  • the structure of AC LED dies according to the invention is formed with at least one unit of AC LED micro-dies disposed on a chip.
  • the unit of AC LED micro-dies comprises two LED micro-dies arranged in mutually reverse orientations and connected with each other in parallel, to which an AC power supply may be applied so that the unit of AC LED micro-dies continuously emits light in response to a positive-half wave voltage and a negative-half wave voltage in the AC power supply respectively. Since each AC LED micro-die is operated forwardly, the structure of the AC LED dies also provides protection from electric static charge (ESD) and may operate under a high voltage.
  • ESD electric static charge
  • the structure of the AC LED dies may be provided in a flipped form or a faced-up form.
  • each of the LED dies in the structure of the AC LED dies may correspond to the same wavelength or different wavelengths with those of the other LEDs in the unit of AC LED dies.
  • the structure of AC LED dies may be used in a wider applicable range.
  • FIG. 1A is a characteristic curve diagram of a prior light-emitting diode (LED) die
  • FIGS. 1B-1D are schematic illustrations of a prior LED die produced by Lumileds
  • FIGS. 1E-1F are characteristic curve diagrams of the LED die shown in FIGS. 1B-1D ;
  • FIG. 2 is an illustration of the prior LED in use
  • FIG. 3 is a schematic diagram of a structure of LED dies having an alternating current (AC) loop (a structure of AC LED die) according to the invention
  • FIG. 4A is an equivalent circuit diagram of the structure of AC LED dies shown in FIG. 3 ;
  • FIG. 4B is a characteristic curve diagram of the structure of AC LED dies shown in FIG. 3 .
  • FIG. 5 is a schematic diagram describing a manufacturing of the structure of AC LED dies
  • FIG. 6 is a schematic diagram illustrating a package of the structure of AC LED dies shown in FIG. 3 ;
  • FIG. 7 is a schematic diagram illustrating a flip-chip structure of the AC LED dies shown in FIG. 3 ;
  • FIG. 8 is a variant of the equivalent circuit shown in FIG. 4A ;
  • FIG. 9A is the structure of AC LED dies according to another embodiment of the invention.
  • FIG. 9B is a variant of the structure of AC LED dies shown in FIG. 9A ;
  • FIGS. 10A and 10B are illustrations of a plurality of structures of AC LED dies connected in a matrix form according to the invention.
  • FIG. 11 is an equivalent circuit diagram of the matrix-formed plurality of structures of AC LED dies shown in FIGS. 10A and 10B ;
  • FIGS. 12A-12F are illustrations of a process flow of the manufacturing of the structure of AC LED dies according to the invention.
  • a structure of light-emitting diode (LED) dies having an alternating current (AC) loop which may be fed with a direct AC power supply, is disclosed in the invention (abbreviated as a structure of AC LED dies).
  • the structure of AC LED dies comprises at least a unit 50 of AC LED micro-dies, which will be described in the following. Referring to FIG. 3 , the unit of AC LED micro-dies comprises a first LED micro-die and a second LED micro-die 21 and 22 arranged in mutually reverse orientations and connected in parallel.
  • the unit of AC LED micro-dies has an equivalent circuit as shown in FIG. 4A .
  • the first and second LED micro-dies 21 and 22 are oriented reversely and connected in parallel, the first LED micro-die 21 emits light when a positive-half wave voltage in the AC power supply is applied, while the second LED micro-die 22 emits light when a negative-half wave voltage in the AC power supply is applied. Therefore, the unit of LED micro-dies may emit light continuously whenever a proper AC power supply is provided. For this reason, the above-mentioned terms “AC loop”, “AC LED dies” and “AC LED micro-dies” are used.
  • the unit 50 of micro-dies is fabricated on a substrate 100 .
  • Two layers 102 and 104 of a first conductivity type are supported on the substrate and separated from each other.
  • the layer 102 has a wide end 102 W and a narrow end 102 N.
  • the layer 104 has a wide end 104 W and a narrow end 102 N.
  • Two layers 106 and 108 of a second conductivity type are supported respectively on the two layers 102 and 104 with the first conductivity type.
  • the layers 106 and 108 have wide ends ( 106 W and 108 W) and narrow ends ( 106 N and 108 N).
  • a rear pad 110 is formed on the layer 104 of the first conductivity type, adjacent its narrow end 104 N.
  • a rear pad 112 is formed on the layer 106 of the second conductivity type, adjacent its wide end 106 W.
  • a rear conductive bridge 114 connects the rear pads 110 and 112 .
  • a front pad 116 is formed on the layer 102 of the first conductivity type, adjacent its narrow end 102 N.
  • a front pad 118 is formed on the layer 108 of the second conductivity type, adjacent its end 108 W.
  • a front bridge 120 connects the front pads 116 and 118 .
  • the substrate 100 is rectangular and has two pairs of parallel sides, including front and rear parallel sides 100 F and 100 R.
  • the micro-die 21 has an edge 122 , and an anode (at pad 118 ) and a cathode (at pad 110 ) disposed adjacent opposite ends of the edge 122 .
  • the micro-dies 21 and 22 complement each other in shape so as to occupy a substantially rectangular region.
  • the micro-die 22 has an edge 124 and an anode and cathode disposed adjacent opposite ends of the edge 124 .
  • the edge 122 is disposed at an acute angle ⁇ (illustrated with the aid of a dotted line) to the front and rear edges 100 F and 100 R.
  • edge 124 is disposed at an acute angle (corresponding to the angle ⁇ and illustrated with the aid of a dotted line, but not marked with a reference character in order to avoid cluttering the drawing) with respect to the front and rear edges 100 F and 100 R.
  • the characteristic curve associated with the current-voltage relation of the unit of AC LED micro-dies is provided in FIG. 4 b . Since each LED micro-die in the unit is operated forwardly, the structure of AC LED dies also provides protection from electric static charge (ESD) without the need of an additional circuit, as in the prior art, or a diode fixed on a sub-mount and connected with the LEDs, as in U.S. Pat. No. 6,547,249. Therefore, the purpose of cost saving may be achieved.
  • ESD electric static charge
  • FIG. 5 illustrates the manufacturing of the structure of AC LED dies in a related embodiment.
  • two unconnected n-type light-emitting layers 62 a and 62 b such as a n-InGaN layer, are first formed on a substrate 61 made of Al 2 O 3 , GaAs, GaP or SiC, etc.
  • two p-type light-emitting layers 63 a and 63 b such as an p-InGaN layer, are formed on portions of the n-type light-emitting layers 62 a and 62 b respectively.
  • n-type pads 67 a and 67 b are formed on other portions of the n-type light-emitting layers 62 a and 62 b respectively.
  • p-type pads 66 a and 66 b are formed on the p-type light-emitting layers 63 a and 63 b respectively.
  • a conductive bridge 65 is formed to connect the n-type pad 67 a and the p-type pad 66 b
  • an insulating layer 64 is formed to avoid short-circuiting between the n-type pad 67 a , the p-type pad 66 b and the conductive bridge 65 .
  • the p-type pad 67 b is connected to the n-type pad 66 a.
  • a substrate 61 is provided.
  • n-type light-emitting layers 62 a and 62 b and p-type light-emitting layers 63 a and 63 b are provided (from bottom to top), as shown in FIG. 12A .
  • an etching operation is performed upon a portion of each of the p-type light-emitting layers 63 a and 63 b , and a corresponding portion of each of the n-type light-emitting layers 62 a and 62 b is thus exposed, as shown in FIG. 12B .
  • an insulating layer 64 is formed, as shown in FIG. 12C .
  • the insulating layer 64 may be an oxide layer, for example.
  • specific portions defined for formation of pads in the n-type light-emitting layers 62 a and 62 b and p-type light-emitting layers 63 a and 63 b are etched, as shown in FIG. 12D .
  • n-type pads 67 a and 67 b and p-type pads 66 a and 66 b are formed at their defined regions as mentioned, as shown in FIG. 12E .
  • a conductive bridge 65 is formed and connected between the n-type pad 67 a and p-type pad 66 b , as shown in FIG. 12F .
  • the structure of AC LED dies may be covered by a glue as a packaged structure and fixed on a sub-mount 69 , wherein the glue may be a heatsink glue and the sub-mount 69 may be formed with a surface that acts as a reflective layer to reflect light.
  • bumps 72 may be formed over the sub-mount 69 .
  • Trace 71 are used to connect the n-type pad 67 a with the p-type pad 66 b , and the n-type pad 67 b and the p-type pad 66 a are also electrically connected with each other (not shown in the figure) as shown in FIG. 7 .
  • the structure of AC LED dies may be connected with a third LED micro-die 23 in parallel as shown in FIG. 8 , and an asymmetric structure of AC LED dies is thus formed.
  • FIG. 9A illustrates another embodiment of the structure of AC LED dies.
  • a first LED micro-die 21 is connected with a third LED micro-die 23 and a second LED micro-die 22 is connected with a fourth LED micro-die 24 , and the same result as provided by the above mentioned embodiment of the structure of AC LED dies is obtained.
  • the structure of AC LED dies may be further connected with a fifth LED micro-die 25 and a sixth LED micro-die 26 in parallel, similar to that shown in FIG. 8 , as shown in FIG. 9B .
  • each of the LED micro-dies may emit light with a single wavelength or multiple wavelengths when a power supply is supplied, such as wavelengths corresponding to red, green and blue lights.
  • a first pad 41 and a second pad 42 are formed on a substrate 40 , and a plurality of units 50 of AC LED dies are coupled therebetween, as shown in FIGS. 10A and 10B .
  • Each unit 50 of AC LED dies comprises a first LED micro-die 21 and a second LED micro-die 22 , as shown in FIG. 3 , and has an equivalent circuit shown in FIG. 11 .
  • the first and second LED micro-dies 21 and 22 are arranged in mutually reverse orientations and connected in parallel, and a plurality of thus formed units 50 is connected in series. Similar to the description in FIG.
  • the first LED micro-die 21 in the unit 50 emits light when a positive-half wave voltage is in the AC power supply, while the second LED micro-die 22 in the unit 50 emits light when a negative-half wave voltage is in the AC power supply (see FIG. 10B ). Since the voltage of the AC power supply is varied between a positive peak and a negative peak with a high frequency, light emitted alternatively from the LEDs 21 and 22 is continuous. Generally, AC voltage has a large swing or a large amplitude.
  • the AC power supply may have a frequency up to 50-60 kHz.
  • any waveform of the AC power supply may be used, provided that the waveform is symmetrical.

Abstract

A structure of light-emitting diode (LED) dies having an AC loop (a structure of AC LED dies), which is formed with at least one unit of AC LED micro-dies disposed on a chip. The unit of AC LED micro-dies comprises two LED micro-dies arranged in mutually reverse orientations and connected with each other in parallel, to which an AC power supply may be applied so that the LED unit may continuously emit light in response to a positive-half wave voltage and a negative-half wave voltage in the AC power supply. Since each AC LED micro-die is operated forwardly, the structure of AC LED dies also provides protection from electrical static charge (ESD) and may operate under a high voltage.

Description

CROSS-REFERENCE TO RELATED APPLICATION
The present application is a continuation of application Ser. No. 10/994,361, filed Nov. 23, 2004, which claimed Priority from Taiwanese application No. 093126201, filed Aug. 31, 2004, the entire disclosure of which is incorporated herein by reference.
BACKGROUND OF THE INVENTION
1. Field of Invention
The invention relates to a structure of light-emitting diodes (LED), and particularly to a structure of LED dies with an alternating current (AC) loop (a structure of AC LED dies).
2. Related Art
A light-emitting diode (LED) emits light based on its semi-conductive characteristics, in contrast to the heating light-emitting principle of a fluorescent lamp, and is thus called a cold light. The LED provides a number of advantages such as high endurance, long lifetime, compactness, low power consumption and so forth. Furthermore, no pernicious material such as mercury is contained in the LED. Therefore, there are high expectations with respect to the LEDs for being a light source in daily life in the current lighting market.
However, prior LEDs are generally limited in their acceptable power levels. Most LEDs may be fed with only low DC voltages and may be damaged if high voltages or AC voltages are applied thereon. Because of this, a DC voltage conversion circuit is generally used to transform the external power supply used by such LEDs. In operating an LED by use of a low DC voltage, the LED has its characteristic curve of the current-voltage relation, as shown in FIG. 1A. As shown, when the voltage is forwardly applied, the LED is conducted and light is emitted there from. On the other hand, if a reverse voltage is applied, the LED breaks down and no light is emitted. Further, in practical usage the LED is often connected in series or parallel with several such LEDs, such as those used in traffic light apparatuses such as stop light apparatuses. As shown in FIG. 2, the externally supplied AC voltage 11 is first reduced in its level by means of a conversion circuit 12 and then converted into a DC voltage corresponding thereto. Then the converted DC voltage is fed into a plurality of LEDs connected with one another in series or in parallel as mentioned above, in which LEDs cannot be used when reverse power is supplied.
However, once a single LED arranged among the plurality of LEDs is damaged, the set of LEDs in which the damaged LED resides is also likely to become damaged and the whole of the loop formed with the damaged LED included is badly affected. To reduce this occurrence, the number of LEDs connected in series is generally reduced as much as possible. Unfortunately, the total amount of wires used for these LEDs in a specific application is unavoidably increased and the power consumption increases correspondingly. Furthermore, the voltage at an end of one of the wires is insufficient and thus causes uneven luminance of the LEDs.
There is another serious problem with a low DC voltage operated ALInGaN LED. When such a LED is assembled and processed, electrical static discharge (ESD) is apt to occur. When this occurs, an instantaneous high reverse voltage is burst forth and the LED is damaged.
To resolve the above-mentioned shortcomings, circuit assembly and die manufacturing are two generally adopted solutions.
The circuit assembly scheme may be seen in U.S. Pat. No. 6,547,249. This patent discloses an additional diode arranged in a reverse orientation and connected in parallel to protect an LED-based circuit to prevent sudden ESD or an exceptional current or voltage attack. In another U.S. Pat. No. 5,936,599, LEDs in an LED based circuit are arranged in a reverse orientation and connected in parallel, and inductors and capacitors are introduced in the circuit. In this case, an AC voltage and a high voltage may be used by the LEDs. However, although the problem of high power consumption may be overcome by such circuit assembly schemes, the corresponding large volume of the LED based circuit considerably limits its actual applicable range.
An example of the die manufacturing scheme may be seen in U.S. Pat. No. 6,547,249, in which LED dies are manufactured as a matrix form and connections of the LED dies are arranged in the same orientation in series and in parallel. Although such LEDs may be operated with a high voltage, they may still not be applied with an AC voltage. In this patent, an arrangement for protection of breakdown of the LEDs is also provided by connecting a diode with the LEDs in a variety of combinations where the LEDs may also be arranged in mutually reverse orientations and connected with each other but should be disposed over a submount and then connected with the LED matrix in parallel. According to this patent, the LED die 91 has a structure shown in FIG. 1B, and has an equivalent circuit shown in FIG. 1C, in which the LED 91 is connected in parallel with two mutually oriented Zener diodes 92 and 93, or a connection may be provided to form a loop as shown in FIG. 1D. The current-voltage relation curves corresponding to the equivalent circuits in FIG. 1C and FIG. 1D are shown in FIG. 1E and FIG. 1F respectively.
Also referring to U.S. Pat. No. 6,635,902, the LED dies are also manufactured as a matrix form while the LEDs are oriented the same and connected in series. Although the LEDs may be operated with a high voltage, they also have the problem of not being capable of operation with AC voltage.
SUMMARY OF THE INVENTION
An object of the invention is therefore to provide a structure of light-emitting diode (LED) dies having an alternating current (AC) loop abbreviated as a structure of AC LED dies, on which an AC power supply may be applied directly to considerably broaden applicable range.
To achieve the above object, the structure of AC LED dies according to the invention is formed with at least one unit of AC LED micro-dies disposed on a chip. The unit of AC LED micro-dies comprises two LED micro-dies arranged in mutually reverse orientations and connected with each other in parallel, to which an AC power supply may be applied so that the unit of AC LED micro-dies continuously emits light in response to a positive-half wave voltage and a negative-half wave voltage in the AC power supply respectively. Since each AC LED micro-die is operated forwardly, the structure of the AC LED dies also provides protection from electric static charge (ESD) and may operate under a high voltage.
In practical usage, the structure of the AC LED dies may be provided in a flipped form or a faced-up form. Also, each of the LED dies in the structure of the AC LED dies may correspond to the same wavelength or different wavelengths with those of the other LEDs in the unit of AC LED dies. Thus the structure of AC LED dies may be used in a wider applicable range.
The objects, constructions, features and functions of the invention may be better understood through the following detailed description with respect to the preferred embodiments thereof in connection with the accompanying drawings.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1A is a characteristic curve diagram of a prior light-emitting diode (LED) die;
FIGS. 1B-1D are schematic illustrations of a prior LED die produced by Lumileds;
FIGS. 1E-1F are characteristic curve diagrams of the LED die shown in FIGS. 1B-1D;
FIG. 2 is an illustration of the prior LED in use;
FIG. 3 is a schematic diagram of a structure of LED dies having an alternating current (AC) loop (a structure of AC LED die) according to the invention;
FIG. 4A is an equivalent circuit diagram of the structure of AC LED dies shown in FIG. 3;
FIG. 4B is a characteristic curve diagram of the structure of AC LED dies shown in FIG. 3.
FIG. 5 is a schematic diagram describing a manufacturing of the structure of AC LED dies;
FIG. 6 is a schematic diagram illustrating a package of the structure of AC LED dies shown in FIG. 3;
FIG. 7 is a schematic diagram illustrating a flip-chip structure of the AC LED dies shown in FIG. 3;
FIG. 8 is a variant of the equivalent circuit shown in FIG. 4A;
FIG. 9A is the structure of AC LED dies according to another embodiment of the invention;
FIG. 9B is a variant of the structure of AC LED dies shown in FIG. 9A;
FIGS. 10A and 10B are illustrations of a plurality of structures of AC LED dies connected in a matrix form according to the invention;
FIG. 11 is an equivalent circuit diagram of the matrix-formed plurality of structures of AC LED dies shown in FIGS. 10A and 10B; and
FIGS. 12A-12F are illustrations of a process flow of the manufacturing of the structure of AC LED dies according to the invention.
DETAILED DESCRIPTION OF THE INVENTION
A structure of light-emitting diode (LED) dies having an alternating current (AC) loop which may be fed with a direct AC power supply, is disclosed in the invention (abbreviated as a structure of AC LED dies). The structure of AC LED dies comprises at least a unit 50 of AC LED micro-dies, which will be described in the following. Referring to FIG. 3, the unit of AC LED micro-dies comprises a first LED micro-die and a second LED micro-die 21 and 22 arranged in mutually reverse orientations and connected in parallel. The unit of AC LED micro-dies has an equivalent circuit as shown in FIG. 4A. Since the first and second LED micro-dies 21 and 22 are oriented reversely and connected in parallel, the first LED micro-die 21 emits light when a positive-half wave voltage in the AC power supply is applied, while the second LED micro-die 22 emits light when a negative-half wave voltage in the AC power supply is applied. Therefore, the unit of LED micro-dies may emit light continuously whenever a proper AC power supply is provided. For this reason, the above-mentioned terms “AC loop”, “AC LED dies” and “AC LED micro-dies” are used.
As is shown in FIG. 3, the unit 50 of micro-dies is fabricated on a substrate 100. Two layers 102 and 104 of a first conductivity type are supported on the substrate and separated from each other. The layer 102 has a wide end 102W and a narrow end 102N. Similarly, the layer 104 has a wide end 104W and a narrow end 102N. Two layers 106 and 108 of a second conductivity type are supported respectively on the two layers 102 and 104 with the first conductivity type. Like the layers 102 and 104, the layers 106 and 108 have wide ends (106W and 108W) and narrow ends (106N and 108N). A rear pad 110 is formed on the layer 104 of the first conductivity type, adjacent its narrow end 104N. A rear pad 112 is formed on the layer 106 of the second conductivity type, adjacent its wide end 106W. A rear conductive bridge 114 connects the rear pads 110 and 112. A front pad 116 is formed on the layer 102 of the first conductivity type, adjacent its narrow end 102N. A front pad 118 is formed on the layer 108 of the second conductivity type, adjacent its end 108W. A front bridge 120 connects the front pads 116 and 118.
As is also shown in FIG. 3, the substrate 100 is rectangular and has two pairs of parallel sides, including front and rear parallel sides 100F and 100R. The micro-die 21 has an edge 122, and an anode (at pad 118) and a cathode (at pad 110) disposed adjacent opposite ends of the edge 122. As FIG. 3 illustrates, the micro-dies 21 and 22 complement each other in shape so as to occupy a substantially rectangular region. The micro-die 22 has an edge 124 and an anode and cathode disposed adjacent opposite ends of the edge 124. The edge 122 is disposed at an acute angle α (illustrated with the aid of a dotted line) to the front and rear edges 100F and 100R. Similarly, the edge 124 is disposed at an acute angle (corresponding to the angle α and illustrated with the aid of a dotted line, but not marked with a reference character in order to avoid cluttering the drawing) with respect to the front and rear edges 100F and 100R.
Furthermore, the characteristic curve associated with the current-voltage relation of the unit of AC LED micro-dies is provided in FIG. 4 b. Since each LED micro-die in the unit is operated forwardly, the structure of AC LED dies also provides protection from electric static charge (ESD) without the need of an additional circuit, as in the prior art, or a diode fixed on a sub-mount and connected with the LEDs, as in U.S. Pat. No. 6,547,249. Therefore, the purpose of cost saving may be achieved.
FIG. 5 illustrates the manufacturing of the structure of AC LED dies in a related embodiment. First, two unconnected n-type light-emitting layers 62 a and 62 b, such as a n-InGaN layer, are first formed on a substrate 61 made of Al2O3, GaAs, GaP or SiC, etc. Next, two p-type light-emitting layers 63 a and 63 b, such as an p-InGaN layer, are formed on portions of the n-type light-emitting layers 62 a and 62 b respectively. Next, n- type pads 67 a and 67 b are formed on other portions of the n-type light-emitting layers 62 a and 62 b respectively. Then, p- type pads 66 a and 66 b are formed on the p-type light-emitting layers 63 a and 63 b respectively. Then a conductive bridge 65 is formed to connect the n-type pad 67 a and the p-type pad 66 b, and an insulating layer 64 is formed to avoid short-circuiting between the n-type pad 67 a, the p-type pad 66 b and the conductive bridge 65. Finally, the p-type pad 67 b is connected to the n-type pad 66 a.
Specifically, the manufacturing of the structure of AC LED dies is illustrated as follows with reference to FIGS. 12A-12F. First, a substrate 61 is provided. On the substrate 61, n-type light-emitting layers 62 a and 62 b and p-type light-emitting layers 63 a and 63 b are provided (from bottom to top), as shown in FIG. 12A. Next, an etching operation is performed upon a portion of each of the p-type light-emitting layers 63 a and 63 b, and a corresponding portion of each of the n-type light-emitting layers 62 a and 62 b is thus exposed, as shown in FIG. 12B. Next, an insulating layer 64 is formed, as shown in FIG. 12C. The insulating layer 64 may be an oxide layer, for example. Thereafter, specific portions defined for formation of pads in the n-type light-emitting layers 62 a and 62 b and p-type light-emitting layers 63 a and 63 b are etched, as shown in FIG. 12D. Then, n- type pads 67 a and 67 b and p- type pads 66 a and 66 b are formed at their defined regions as mentioned, as shown in FIG. 12E. Finally, a conductive bridge 65 is formed and connected between the n-type pad 67 a and p-type pad 66 b, as shown in FIG. 12F.
In addition, the structure of AC LED dies may be covered by a glue as a packaged structure and fixed on a sub-mount 69, wherein the glue may be a heatsink glue and the sub-mount 69 may be formed with a surface that acts as a reflective layer to reflect light. Alternatively, bumps 72 may be formed over the sub-mount 69. Trace 71 are used to connect the n-type pad 67 a with the p-type pad 66 b, and the n-type pad 67 b and the p-type pad 66 a are also electrically connected with each other (not shown in the figure) as shown in FIG. 7.
In addition, the structure of AC LED dies may be connected with a third LED micro-die 23 in parallel as shown in FIG. 8, and an asymmetric structure of AC LED dies is thus formed.
FIG. 9A illustrates another embodiment of the structure of AC LED dies. In this embodiment, a first LED micro-die 21 is connected with a third LED micro-die 23 and a second LED micro-die 22 is connected with a fourth LED micro-die 24, and the same result as provided by the above mentioned embodiment of the structure of AC LED dies is obtained. Alternatively, the structure of AC LED dies may be further connected with a fifth LED micro-die 25 and a sixth LED micro-die 26 in parallel, similar to that shown in FIG. 8, as shown in FIG. 9B. In the above embodiments, each of the LED micro-dies may emit light with a single wavelength or multiple wavelengths when a power supply is supplied, such as wavelengths corresponding to red, green and blue lights.
In practical usage, a first pad 41 and a second pad 42 are formed on a substrate 40, and a plurality of units 50 of AC LED dies are coupled therebetween, as shown in FIGS. 10A and 10B. Each unit 50 of AC LED dies comprises a first LED micro-die 21 and a second LED micro-die 22, as shown in FIG. 3, and has an equivalent circuit shown in FIG. 11. Seen from FIG. 11, it may be readily known that the first and second LED micro-dies 21 and 22 are arranged in mutually reverse orientations and connected in parallel, and a plurality of thus formed units 50 is connected in series. Similar to the description in FIG. 3, the first LED micro-die 21 in the unit 50 emits light when a positive-half wave voltage is in the AC power supply, while the second LED micro-die 22 in the unit 50 emits light when a negative-half wave voltage is in the AC power supply (see FIG. 10B). Since the voltage of the AC power supply is varied between a positive peak and a negative peak with a high frequency, light emitted alternatively from the LEDs 21 and 22 is continuous. Generally, AC voltage has a large swing or a large amplitude. Even if the voltage on such a unit 50 connected at the downstream of a wire connecting a plurality of units is slightly dropped, the range of reduction is relatively small, unlike the prior art (only several volts is provided) in which slight changes over the voltage fed into the LED cause a remarkable difference of luminance of the LED. Since the LED has a fast response speed, the AC power supply may have a frequency up to 50-60 kHz. In addition, any waveform of the AC power supply may be used, provided that the waveform is symmetrical.
While the preferred embodiments of the invention have been set forth for the purpose of disclosure, modifications of the disclosed embodiments of the invention as well as other embodiments thereof may occur to those skilled in the art. Accordingly, the appended claims are intended to cover all embodiments which do not depart from the spirit and scope of the invention.

Claims (4)

1. A unit of light-emitting diode (LED) micro-dies, comprising:
a rectangular chip having edges;
a first LED micro-die, having a first edge, a first anode and a first cathode, the first anode and the first cathode being respectively disposed adjacent opposite ends of the first edge; and
a second LED micro-die, having a second edge, a second anode and a second cathode, the second edge corresponding to the first edge, the second anode corresponding to and being electrically connected to the first cathode, the second cathode corresponding to and being electrically connected to the first anode, the first LED micro-die and the second LED micro-die being disposed on the rectangular chip and complementing each other in shape so as to occupy a substantially rectangular region,
wherein angles between two parallel edges of the chip and the first edge are acute angles and angles between the two parallel edges of the chip and the second edge are acute angles, and
wherein the unit of LED micro-dies emits a light in response to an alternative current (AC) power supply applied to the first cathode and the first anode.
2. The unit according to claim 1, further comprising a first conductive bridge connected between the second anode and the first cathode, and a second conductive bridge connected between the first anode and the second cathode.
3. The unit according to claim 1, wherein the two LED micro-dies emit light of the same wavelength.
4. The unit according to claim 1, wherein the two LED micro-dies emit light of different wavelengths.
US12/424,109 2004-08-31 2009-04-15 Structure of AC light-emitting diode dies Expired - Fee Related US8053791B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/424,109 US8053791B2 (en) 2004-08-31 2009-04-15 Structure of AC light-emitting diode dies

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
TW93126201A 2004-08-31
TW093126201A TW200501464A (en) 2004-08-31 2004-08-31 LED chip structure with AC loop
TW093126201 2004-08-31
US10/994,361 US7531843B2 (en) 2004-08-31 2004-11-23 Structure of AC light-emitting diode dies
US12/424,109 US8053791B2 (en) 2004-08-31 2009-04-15 Structure of AC light-emitting diode dies

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
US10/994,361 Continuation US7531843B2 (en) 2004-08-31 2004-11-23 Structure of AC light-emitting diode dies

Publications (2)

Publication Number Publication Date
US20090218580A1 US20090218580A1 (en) 2009-09-03
US8053791B2 true US8053791B2 (en) 2011-11-08

Family

ID=35745778

Family Applications (4)

Application Number Title Priority Date Filing Date
US10/994,361 Active 2025-05-16 US7531843B2 (en) 2004-08-31 2004-11-23 Structure of AC light-emitting diode dies
US12/149,852 Abandoned US20080218093A1 (en) 2004-08-31 2008-05-09 Structure of AC light-emitting diode dies
US12/424,109 Expired - Fee Related US8053791B2 (en) 2004-08-31 2009-04-15 Structure of AC light-emitting diode dies
US12/861,495 Active 2025-05-26 US8803166B2 (en) 2004-08-31 2010-08-23 Structure of AC light-emitting diode dies

Family Applications Before (2)

Application Number Title Priority Date Filing Date
US10/994,361 Active 2025-05-16 US7531843B2 (en) 2004-08-31 2004-11-23 Structure of AC light-emitting diode dies
US12/149,852 Abandoned US20080218093A1 (en) 2004-08-31 2008-05-09 Structure of AC light-emitting diode dies

Family Applications After (1)

Application Number Title Priority Date Filing Date
US12/861,495 Active 2025-05-26 US8803166B2 (en) 2004-08-31 2010-08-23 Structure of AC light-emitting diode dies

Country Status (5)

Country Link
US (4) US7531843B2 (en)
JP (1) JP4183044B2 (en)
KR (1) KR100675774B1 (en)
DE (1) DE102004058732B4 (en)
TW (1) TW200501464A (en)

Families Citing this family (113)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1553641B1 (en) 2002-08-29 2011-03-02 Seoul Semiconductor Co., Ltd. Light-emitting device having light-emitting diodes
US7213942B2 (en) * 2002-10-24 2007-05-08 Ac Led Lighting, L.L.C. Light emitting diodes for high AC voltage operation and general lighting
US6957899B2 (en) * 2002-10-24 2005-10-25 Hongxing Jiang Light emitting diodes for high AC voltage operation and general lighting
JP2008523637A (en) * 2004-12-14 2008-07-03 ソウル オプト−デバイス カンパニー リミテッド Light emitting device having a plurality of light emitting cells and package mounting the same
KR20060084315A (en) * 2005-01-19 2006-07-24 삼성전기주식회사 Led array circuit
US7525248B1 (en) 2005-01-26 2009-04-28 Ac Led Lighting, L.L.C. Light emitting diode lamp
US7579204B2 (en) * 2005-01-26 2009-08-25 Sony Corporation Method of production of semiconductor light emission device and method of production of light emission apparatus
KR100665116B1 (en) * 2005-01-27 2007-01-09 삼성전기주식회사 Galium Nitride-Based Light Emitting Device Having LED for ESD Protection
US7535028B2 (en) * 2005-02-03 2009-05-19 Ac Led Lighting, L.Lc. Micro-LED based high voltage AC/DC indicator lamp
EP2280430B1 (en) 2005-03-11 2020-01-01 Seoul Semiconductor Co., Ltd. LED package having an array of light emitting cells coupled in series
KR100663907B1 (en) * 2005-03-24 2007-01-02 서울옵토디바이스주식회사 Luminous element having arrayed cells and method of manufacturing the same
TW200640045A (en) * 2005-05-13 2006-11-16 Ind Tech Res Inst Alternating current light-emitting device
US7474681B2 (en) 2005-05-13 2009-01-06 Industrial Technology Research Institute Alternating current light-emitting device
US8704241B2 (en) 2005-05-13 2014-04-22 Epistar Corporation Light-emitting systems
CN101459190B (en) * 2005-05-20 2012-05-09 晶元光电股份有限公司 AC illuminating device and manufacturing method thereof
US8272757B1 (en) 2005-06-03 2012-09-25 Ac Led Lighting, L.L.C. Light emitting diode lamp capable of high AC/DC voltage operation
US20070018594A1 (en) * 2005-06-08 2007-01-25 Jlj. Inc. Holiday light string devices
WO2006137711A1 (en) 2005-06-22 2006-12-28 Seoul Opto-Device Co., Ltd. Light emitting device and method of manufacturing the same
KR100616415B1 (en) 2005-08-08 2006-08-29 서울옵토디바이스주식회사 Alternate current type light-emitting diode
US8901575B2 (en) * 2005-08-09 2014-12-02 Seoul Viosys Co., Ltd. AC light emitting diode and method for fabricating the same
TWI318466B (en) * 2005-12-09 2009-12-11 Ind Tech Res Inst Ac_led single chip with three terminals
TWI378742B (en) * 2005-12-09 2012-12-01 Epistar Corp Multiphase driving method and device for ac_led
KR100652864B1 (en) 2005-12-16 2006-12-04 서울옵토디바이스주식회사 Light emitting diode having an improved transparent electrode structure for ac power operation
CN101820043A (en) 2006-01-09 2010-09-01 首尔Opto仪器股份有限公司 Light-emitting device
EP2023453A1 (en) * 2006-05-31 2009-02-11 Panasonic Corporation Semiconductor light source and light-emitting device drive circuit
TWI314789B (en) 2006-08-16 2009-09-11 Ind Tech Res Inst Alternating current light-emitting device
US7714348B2 (en) * 2006-10-06 2010-05-11 Ac-Led Lighting, L.L.C. AC/DC light emitting diodes with integrated protection mechanism
TWI371870B (en) * 2006-11-08 2012-09-01 Epistar Corp Alternate current light-emitting device and fabrication method thereof
US8338836B2 (en) 2006-11-21 2012-12-25 Seoul Opto Device Co., Ltd. Light emitting device for AC operation
US20080129198A1 (en) * 2006-12-01 2008-06-05 Hong Kong Applied Science And Technology Research Institute Co. Ltd. Light-emitting diode device
KR101158079B1 (en) 2006-12-22 2012-07-20 서울옵토디바이스주식회사 A luminous element having numerous cells
EP2111640B1 (en) * 2007-01-22 2019-05-08 Cree, Inc. Fault tolerant light emitter and method of fabricating the same
TWI440210B (en) 2007-01-22 2014-06-01 Cree Inc Illumination devices using externally interconnected arrays of light emitting devices, and methods of fabricating same
KR101239853B1 (en) * 2007-03-13 2013-03-06 서울옵토디바이스주식회사 Ac light emitting diode
KR100856230B1 (en) * 2007-03-21 2008-09-03 삼성전기주식회사 Light emitting device, method of manufacturing the same and monolithic light emitting diode array
US9534772B2 (en) * 2007-05-31 2017-01-03 Nthdegree Technologies Worldwide Inc Apparatus with light emitting diodes
US10161615B2 (en) * 2007-05-31 2018-12-25 Nthdegree Technologies Worldwide Inc Apparatus with forward and reverse-biased light emitting diodes coupled in parallel
TW200849548A (en) * 2007-06-05 2008-12-16 Lite On Technology Corp Light emitting element, manufacturing method thereof and light emitting module using the same
KR100843402B1 (en) * 2007-06-22 2008-07-03 삼성전기주식회사 Led driving circuit and light emtting diode array device
TWI495390B (en) * 2007-08-16 2015-08-01 Epistar Corp Lighting devices and fabrication methods thereof
US8632199B2 (en) * 2007-11-20 2014-01-21 Epistar Corporation Lamp apparatuses
KR101025972B1 (en) * 2008-06-30 2011-03-30 삼성엘이디 주식회사 Ac driving light emitting device
KR100956224B1 (en) 2008-06-30 2010-05-04 삼성엘이디 주식회사 Led driving circuit and light emtting diode array device
KR100965243B1 (en) 2008-08-22 2010-06-22 서울옵토디바이스주식회사 Light emitting diode for ac operation
US8963175B2 (en) * 2008-11-06 2015-02-24 Samsung Electro-Mechanics Co., Ltd. Light emitting device and method of manufacturing the same
CN101749556B (en) * 2008-11-28 2015-11-25 晶元光电股份有限公司 AC light-emitting diode (LED) device
KR20100076083A (en) 2008-12-17 2010-07-06 서울반도체 주식회사 Light emitting diode having plurality of light emitting cells and method of fabricating the same
US9142592B2 (en) * 2009-04-09 2015-09-22 Infineon Technologies Ag Integrated circuit including ESD device
US8558249B1 (en) 2009-06-30 2013-10-15 Applied Lighting Solutions, LLC Rectifier structures for AC LED systems
KR100937502B1 (en) * 2009-07-01 2010-02-04 (주)이에스엘라이팅 Led lamp
US9433046B2 (en) 2011-01-21 2016-08-30 Once Innovations, Inc. Driving circuitry for LED lighting with reduced total harmonic distortion
US8400064B2 (en) * 2009-09-09 2013-03-19 Koninklijke Philips Electronics N.V. Zener diode protection network in submount for LEDs connected in series
CA2716022C (en) 2010-09-30 2019-03-12 Light-Based Technologies Incorporated Apparatus and methods for supplying power
TWI398965B (en) * 2009-11-25 2013-06-11 Formosa Epitaxy Inc Light emitting diode chip and package structure thereof
TWI420712B (en) * 2009-12-09 2013-12-21 Epistar Corp Led structure and the led package thereof
JP2011249411A (en) * 2010-05-24 2011-12-08 Seiwa Electric Mfg Co Ltd Semiconductor light-emitting element, light-emitting device, illumination device, display device, signal light unit and road information device
TWM390632U (en) * 2010-06-07 2010-10-11 Unity Opto Technology Co Ltd Light-emitting diode protection structure
TWI557875B (en) * 2010-07-19 2016-11-11 晶元光電股份有限公司 Multi-dimensional light emitting device
TWI451596B (en) * 2010-07-20 2014-09-01 Epistar Corp An array-type led device
US8841864B2 (en) 2011-12-05 2014-09-23 Biological Illumination, Llc Tunable LED lamp for producing biologically-adjusted light
US9827439B2 (en) 2010-07-23 2017-11-28 Biological Illumination, Llc System for dynamically adjusting circadian rhythm responsive to scheduled events and associated methods
US8465167B2 (en) 2011-09-16 2013-06-18 Lighting Science Group Corporation Color conversion occlusion and associated methods
US8743023B2 (en) 2010-07-23 2014-06-03 Biological Illumination, Llc System for generating non-homogenous biologically-adjusted light and associated methods
US8760370B2 (en) 2011-05-15 2014-06-24 Lighting Science Group Corporation System for generating non-homogenous light and associated methods
US9024536B2 (en) 2011-12-05 2015-05-05 Biological Illumination, Llc Tunable LED lamp for producing biologically-adjusted light and associated methods
US9532423B2 (en) 2010-07-23 2016-12-27 Lighting Science Group Corporation System and methods for operating a lighting device
US9681522B2 (en) 2012-05-06 2017-06-13 Lighting Science Group Corporation Adaptive light system and associated methods
US8686641B2 (en) 2011-12-05 2014-04-01 Biological Illumination, Llc Tunable LED lamp for producing biologically-adjusted light
DE102010032813A1 (en) * 2010-07-30 2012-02-02 Osram Opto Semiconductors Gmbh Method for producing an optoelectronic semiconductor component and optoelectronic semiconductor component
KR101142539B1 (en) * 2010-08-18 2012-05-08 한국전기연구원 Arrangement structure of light emitting diode chip for alternating current
US9070851B2 (en) 2010-09-24 2015-06-30 Seoul Semiconductor Co., Ltd. Wafer-level light emitting diode package and method of fabricating the same
US8401231B2 (en) 2010-11-09 2013-03-19 Biological Illumination, Llc Sustainable outdoor lighting system for use in environmentally photo-sensitive area
US8384984B2 (en) 2011-03-28 2013-02-26 Lighting Science Group Corporation MEMS wavelength converting lighting device and associated methods
US9185783B2 (en) 2011-05-15 2015-11-10 Lighting Science Group Corporation Wireless pairing system and associated methods
US8754832B2 (en) 2011-05-15 2014-06-17 Lighting Science Group Corporation Lighting system for accenting regions of a layer and associated methods
US9648284B2 (en) 2011-05-15 2017-05-09 Lighting Science Group Corporation Occupancy sensor and associated methods
US9173269B2 (en) 2011-05-15 2015-10-27 Lighting Science Group Corporation Lighting system for accentuating regions of a layer and associated methods
US8729832B2 (en) 2011-05-15 2014-05-20 Lighting Science Group Corporation Programmable luminaire system
US8674608B2 (en) 2011-05-15 2014-03-18 Lighting Science Group Corporation Configurable environmental condition sensing luminaire, system and associated methods
US9681108B2 (en) 2011-05-15 2017-06-13 Lighting Science Group Corporation Occupancy sensor and associated methods
US8901850B2 (en) 2012-05-06 2014-12-02 Lighting Science Group Corporation Adaptive anti-glare light system and associated methods
JP5772213B2 (en) * 2011-05-20 2015-09-02 サンケン電気株式会社 Light emitting element
TWI478358B (en) 2011-08-04 2015-03-21 Univ Nat Central A method of integrated AC - type light - emitting diode module
US8515289B2 (en) 2011-11-21 2013-08-20 Environmental Light Technologies Corp. Wavelength sensing lighting system and associated methods for national security application
US8492995B2 (en) 2011-10-07 2013-07-23 Environmental Light Technologies Corp. Wavelength sensing lighting system and associated methods
US9289574B2 (en) 2011-12-05 2016-03-22 Biological Illumination, Llc Three-channel tuned LED lamp for producing biologically-adjusted light
US9913341B2 (en) 2011-12-05 2018-03-06 Biological Illumination, Llc LED lamp for producing biologically-adjusted light including a cyan LED
US8866414B2 (en) 2011-12-05 2014-10-21 Biological Illumination, Llc Tunable LED lamp for producing biologically-adjusted light
US8963450B2 (en) 2011-12-05 2015-02-24 Biological Illumination, Llc Adaptable biologically-adjusted indirect lighting device and associated methods
US9220202B2 (en) 2011-12-05 2015-12-29 Biological Illumination, Llc Lighting system to control the circadian rhythm of agricultural products and associated methods
US9374985B2 (en) * 2011-12-14 2016-06-28 Once Innovations, Inc. Method of manufacturing of a light emitting system with adjustable watt equivalence
US8545034B2 (en) 2012-01-24 2013-10-01 Lighting Science Group Corporation Dual characteristic color conversion enclosure and associated methods
CN103326340A (en) * 2012-03-23 2013-09-25 鸿富锦精密工业(深圳)有限公司 Laser head diode protection circuit and protection method
US9402294B2 (en) 2012-05-08 2016-07-26 Lighting Science Group Corporation Self-calibrating multi-directional security luminaire and associated methods
US8680457B2 (en) 2012-05-07 2014-03-25 Lighting Science Group Corporation Motion detection system and associated methods having at least one LED of second set of LEDs to vary its voltage
US9006987B2 (en) 2012-05-07 2015-04-14 Lighting Science Group, Inc. Wall-mountable luminaire and associated systems and methods
US9127818B2 (en) 2012-10-03 2015-09-08 Lighting Science Group Corporation Elongated LED luminaire and associated methods
US9174067B2 (en) 2012-10-15 2015-11-03 Biological Illumination, Llc System for treating light treatable conditions and associated methods
US9322516B2 (en) 2012-11-07 2016-04-26 Lighting Science Group Corporation Luminaire having vented optical chamber and associated methods
JP6176032B2 (en) 2013-01-30 2017-08-09 日亜化学工業株式会社 Semiconductor light emitting device
US9303825B2 (en) 2013-03-05 2016-04-05 Lighting Science Group, Corporation High bay luminaire
US9347655B2 (en) 2013-03-11 2016-05-24 Lighting Science Group Corporation Rotatable lighting device
US20140268731A1 (en) 2013-03-15 2014-09-18 Lighting Science Group Corpporation Low bay lighting system and associated methods
KR102171024B1 (en) * 2014-06-16 2020-10-29 삼성전자주식회사 Method for manufacturing semiconductor light emitting device package
KR102209036B1 (en) 2014-08-26 2021-01-28 엘지이노텍 주식회사 Light emitting device package
JP6156402B2 (en) * 2015-02-13 2017-07-05 日亜化学工業株式会社 Light emitting device
KR102362306B1 (en) * 2015-04-01 2022-02-11 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 Light emitting device
TWI596985B (en) * 2015-07-22 2017-08-21 億光電子工業股份有限公司 Light emitting device
DE102015114010A1 (en) * 2015-08-24 2017-03-02 Osram Opto Semiconductors Gmbh Optoelectronic component, method for producing an optoelectronic component and method for operating an optoelectronic component
CN205944139U (en) 2016-03-30 2017-02-08 首尔伟傲世有限公司 Ultraviolet ray light -emitting diode spare and contain this emitting diode module
CN107293626A (en) * 2016-03-31 2017-10-24 比亚迪股份有限公司 LED chip, LED core chip package and preparation method
TW201822322A (en) * 2016-12-09 2018-06-16 美麗微半導體股份有限公司 Flip-chip package rectification/protection diode element with multiple chip stacks capable of reducing the height of diode element and extending the number of flip-chips based on voltage resistance requirements
US11191141B1 (en) * 2020-12-17 2021-11-30 Lumileds Llc Powering microLEDs considering outlier pixels

Citations (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04174567A (en) 1990-11-07 1992-06-22 Daido Steel Co Ltd Surface-emission type light emitting diode array
US5936599A (en) 1995-01-27 1999-08-10 Reymond; Welles AC powered light emitting diode array circuits for use in traffic signal displays
US5982345A (en) * 1996-02-09 1999-11-09 Tdk Corporation Organic electroluminescent image display device
JP2000101136A (en) 1998-09-25 2000-04-07 Toshiba Corp Semiconductor light emitting device and drive method for semiconductor light emitting device
US6412971B1 (en) 1998-01-02 2002-07-02 General Electric Company Light source including an array of light emitting semiconductor devices and control method
JP2002359402A (en) 2001-03-29 2002-12-13 Lumileds Lighting Us Llc Monolithic series/parallel led array formed on highly resistive substrate
US6635902B1 (en) * 2002-05-24 2003-10-21 Para Light Electronics Co., Ltd. Serial connection structure of light emitting diode chip
JP2004006582A (en) 2002-04-12 2004-01-08 Shiro Sakai Light emitting device
US20040023493A1 (en) 2002-05-20 2004-02-05 Katsuhiro Tomoda Isolating method and transferring method for semiconductor devices
JP2004079867A (en) 2002-08-21 2004-03-11 Shiro Sakai Manufacturing method of gallium nitride base compound semiconductor device, and light emitting device
KR20040032360A (en) 2002-10-09 2004-04-17 박종수 Mutual light emitting diode capable of using alternating current and Manufacturing method for dual light emitting diode
US20040075399A1 (en) 2002-10-22 2004-04-22 Hall David Charles LED light engine for AC operation and methods of fabricating same
US20040080941A1 (en) 2002-10-24 2004-04-29 Hongxing Jiang Light emitting diodes for high AC voltage operation and general lighting
TW200408148A (en) 2002-08-29 2004-05-16 Shiro Sakai Light-emitting device having plural light-emitting elements
US20040165384A1 (en) 2001-03-29 2004-08-26 Fiber Optic Designs, Inc. Jacketed LED assemblies and light strings containing same
US20040227148A1 (en) 1997-06-03 2004-11-18 Camras Michael D. III-Phosphide and III-Arsenide flip chip light-emitting devices
US7064353B2 (en) 2004-05-26 2006-06-20 Philips Lumileds Lighting Company, Llc LED chip with integrated fast switching diode for ESD protection
US20060180818A1 (en) 2003-07-30 2006-08-17 Hideo Nagai Semiconductor light emitting device, light emitting module and lighting apparatus

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2414778A1 (en) * 1974-03-27 1975-10-02 Siemens Ag Monolithic luminescent diodes with p- and n- conducting strips - have light output zones on surface, minimising loss by absorption
DD219086A3 (en) * 1982-01-04 1985-02-20 Karl Marx Stadt Tech Hochschul AC VOLTAGE-CONTROLLED LUMINESCENCE DIODES
US5187377A (en) 1988-07-15 1993-02-16 Sharp Kabushiki Kaisha LED array for emitting light of multiple wavelengths
US5635902A (en) * 1994-11-16 1997-06-03 Hochstein; Peter A. L.E.D. enhanced bus stop sign
JPH11330561A (en) 1998-05-14 1999-11-30 Oki Electric Ind Co Ltd Led luminaire
US6035902A (en) 1998-06-27 2000-03-14 Wynn Oil Company Fail-safe power steering service machine
JP2000306685A (en) 1999-04-26 2000-11-02 Asahi National Lighting Co Ltd Led lighting circuit
US6388393B1 (en) * 2000-03-16 2002-05-14 Avionic Instruments Inc. Ballasts for operating light emitting diodes in AC circuits
US8100552B2 (en) * 2002-07-12 2012-01-24 Yechezkal Evan Spero Multiple light-source illuminating system
US7053560B1 (en) * 2003-11-17 2006-05-30 Dr. Led (Holdings), Inc. Bi-directional LED-based light
KR100961483B1 (en) * 2004-06-30 2010-06-08 서울옵토디바이스주식회사 Luminous element having arrayed cells and method of manufacturing thereof and luminous apparatus using the same
KR20040103807A (en) * 2004-10-13 2004-12-09 김용대 Light emitting module and driving method for decoration

Patent Citations (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04174567A (en) 1990-11-07 1992-06-22 Daido Steel Co Ltd Surface-emission type light emitting diode array
US5936599A (en) 1995-01-27 1999-08-10 Reymond; Welles AC powered light emitting diode array circuits for use in traffic signal displays
US5982345A (en) * 1996-02-09 1999-11-09 Tdk Corporation Organic electroluminescent image display device
US20040227148A1 (en) 1997-06-03 2004-11-18 Camras Michael D. III-Phosphide and III-Arsenide flip chip light-emitting devices
US6412971B1 (en) 1998-01-02 2002-07-02 General Electric Company Light source including an array of light emitting semiconductor devices and control method
JP2000101136A (en) 1998-09-25 2000-04-07 Toshiba Corp Semiconductor light emitting device and drive method for semiconductor light emitting device
US20040165384A1 (en) 2001-03-29 2004-08-26 Fiber Optic Designs, Inc. Jacketed LED assemblies and light strings containing same
US6547249B2 (en) 2001-03-29 2003-04-15 Lumileds Lighting U.S., Llc Monolithic series/parallel led arrays formed on highly resistive substrates
JP2002359402A (en) 2001-03-29 2002-12-13 Lumileds Lighting Us Llc Monolithic series/parallel led array formed on highly resistive substrate
JP2004006582A (en) 2002-04-12 2004-01-08 Shiro Sakai Light emitting device
US20040023493A1 (en) 2002-05-20 2004-02-05 Katsuhiro Tomoda Isolating method and transferring method for semiconductor devices
US6635902B1 (en) * 2002-05-24 2003-10-21 Para Light Electronics Co., Ltd. Serial connection structure of light emitting diode chip
JP2004079867A (en) 2002-08-21 2004-03-11 Shiro Sakai Manufacturing method of gallium nitride base compound semiconductor device, and light emitting device
TW200408148A (en) 2002-08-29 2004-05-16 Shiro Sakai Light-emitting device having plural light-emitting elements
KR20040032360A (en) 2002-10-09 2004-04-17 박종수 Mutual light emitting diode capable of using alternating current and Manufacturing method for dual light emitting diode
US20040075399A1 (en) 2002-10-22 2004-04-22 Hall David Charles LED light engine for AC operation and methods of fabricating same
US7009199B2 (en) * 2002-10-22 2006-03-07 Cree, Inc. Electronic devices having a header and antiparallel connected light emitting diodes for producing light from AC current
US20040080941A1 (en) 2002-10-24 2004-04-29 Hongxing Jiang Light emitting diodes for high AC voltage operation and general lighting
US20060180818A1 (en) 2003-07-30 2006-08-17 Hideo Nagai Semiconductor light emitting device, light emitting module and lighting apparatus
US7064353B2 (en) 2004-05-26 2006-06-20 Philips Lumileds Lighting Company, Llc LED chip with integrated fast switching diode for ESD protection

Also Published As

Publication number Publication date
DE102004058732A1 (en) 2006-03-02
JP2006073979A (en) 2006-03-16
US20060044864A1 (en) 2006-03-02
TWI302039B (en) 2008-10-11
TW200501464A (en) 2005-01-01
KR20060020572A (en) 2006-03-06
US8803166B2 (en) 2014-08-12
US20090218580A1 (en) 2009-09-03
JP4183044B2 (en) 2008-11-19
US7531843B2 (en) 2009-05-12
US20110012137A1 (en) 2011-01-20
KR100675774B1 (en) 2007-01-29
US20080218093A1 (en) 2008-09-11
DE102004058732B4 (en) 2010-05-06

Similar Documents

Publication Publication Date Title
US8053791B2 (en) Structure of AC light-emitting diode dies
KR101239853B1 (en) Ac light emitting diode
US9461091B2 (en) Light emitting diode
US8283684B2 (en) LED semiconductor body and use of an LED semiconductor body
EP1935038B1 (en) Light emitting device having vertically stacked light emitting diodes
JP5841588B2 (en) Improved multi-junction LED
US8338836B2 (en) Light emitting device for AC operation
JP5270575B2 (en) Light emitting diode resistant to high electrostatic discharge and method of manufacturing the same
KR20050074491A (en) Light emitting diode assembly for ac operation and methods of fabricating same
KR20060084315A (en) Led array circuit
KR100716645B1 (en) Light emitting device having vertically stacked light emitting diodes
US20080129198A1 (en) Light-emitting diode device
JP2003347599A (en) Display element
CN100369275C (en) Light-emitting component capable of increasing light-emitting active area
CN114914334A (en) Light emitting chip and light emitting substrate
KR20200009333A (en) Semiconductor device
KR20180088176A (en) Light emitting diode including light emitting cells
JP2011055007A (en) Ac-driven light emitting diode

Legal Events

Date Code Title Description
AS Assignment

Owner name: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE, TAIWAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:LIN, MING-TE;HWANG, FEI-CHANG;KUO, CHIA-TAI;REEL/FRAME:022697/0958;SIGNING DATES FROM 20090422 TO 20090504

Owner name: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE, TAIWAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:LIN, MING-TE;HWANG, FEI-CHANG;KUO, CHIA-TAI;SIGNING DATES FROM 20090422 TO 20090504;REEL/FRAME:022697/0958

ZAAA Notice of allowance and fees due

Free format text: ORIGINAL CODE: NOA

ZAAB Notice of allowance mailed

Free format text: ORIGINAL CODE: MN/=.

AS Assignment

Owner name: EPISTAR CORPORATION, TAIWAN

Free format text: CHANGE OF NAME;ASSIGNOR:INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE;REEL/FRAME:027050/0522

Effective date: 20110728

STCF Information on status: patent grant

Free format text: PATENTED CASE

FPAY Fee payment

Year of fee payment: 4

MAFP Maintenance fee payment

Free format text: PAYMENT OF MAINTENANCE FEE, 8TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1552); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

Year of fee payment: 8

FEPP Fee payment procedure

Free format text: MAINTENANCE FEE REMINDER MAILED (ORIGINAL EVENT CODE: REM.); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

LAPS Lapse for failure to pay maintenance fees

Free format text: PATENT EXPIRED FOR FAILURE TO PAY MAINTENANCE FEES (ORIGINAL EVENT CODE: EXP.); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

STCH Information on status: patent discontinuation

Free format text: PATENT EXPIRED DUE TO NONPAYMENT OF MAINTENANCE FEES UNDER 37 CFR 1.362

FP Lapsed due to failure to pay maintenance fee

Effective date: 20231108