US8012394B2 - Template pattern density doubling - Google Patents
Template pattern density doubling Download PDFInfo
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- US8012394B2 US8012394B2 US12/344,100 US34410008A US8012394B2 US 8012394 B2 US8012394 B2 US 8012394B2 US 34410008 A US34410008 A US 34410008A US 8012394 B2 US8012394 B2 US 8012394B2
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- template
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- protrusion
- layered substrate
- protrusions
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C33/00—Moulds or cores; Details thereof or accessories therefor
- B29C33/42—Moulds or cores; Details thereof or accessories therefor characterised by the shape of the moulding surface, e.g. ribs or grooves
- B29C33/424—Moulding surfaces provided with means for marking or patterning
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
- B29C43/003—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor characterised by the choice of material
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
- B29C43/02—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles
- B29C43/021—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles characterised by the shape of the surface
- B29C2043/023—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles characterised by the shape of the surface having a plurality of grooves
- B29C2043/025—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles characterised by the shape of the surface having a plurality of grooves forming a microstructure, i.e. fine patterning
Definitions
- Nano-fabrication includes the fabrication of very small structures that have features on the order of 100 nanometers or smaller.
- One application in which nano-fabrication has had a sizeable impact is in the processing of integrated circuits.
- the semiconductor processing industry continues to strive for larger production yields while increasing the circuits per unit area formed on a substrate, therefore nano-fabrication becomes increasingly important.
- Nano-fabrication provides greater process control while allowing continued reduction of the minimum feature dimensions of the structures formed.
- Other areas of development in which nano-fabrication has been employed include biotechnology, optical technology, mechanical systems, and the like.
- imprint lithography An exemplary nano-fabrication technique in use today is commonly referred to as imprint lithography.
- Exemplary imprint lithography processes are described in detail in numerous publications, such as U.S. Patent Publication No. 2004/0065976, U.S. Patent Publication No. 2004/0065252, and U.S. Pat. No. 6,936,194, all of which are hereby incorporated by reference herein.
- An imprint lithography technique disclosed in each of the aforementioned U.S. patent publications and patent includes formation of a relief pattern in a formable (polymerizable) layer and transferring a pattern corresponding to the relief pattern into an underlying substrate.
- the substrate may be coupled to a motion stage to obtain a desired positioning to facilitate the patterning process.
- the patterning process uses a template spaced apart from the substrate and a formable liquid applied between the template and the substrate.
- the formable liquid is solidified to form a rigid layer that has a pattern conforming to a shape of the surface of the template that contacts the formable liquid.
- the template is separated from the rigid layer such that the template and the substrate are spaced apart.
- the substrate and the solidified layer are then subjected to additional processes to transfer a relief image into the substrate that corresponds to the pattern in the solidified layer.
- FIG. 1 illustrates a simplified side view of a lithographic system in accordance with an embodiment of the present invention.
- FIG. 2 illustrates a simplified side view of the substrate shown in FIG. 1 having a patterned layer positioned thereon.
- FIG. 3 illustrates a flow diagram for supplying such replications.
- FIGS. 4-9 illustrate simplified side views of exemplary formation of sub-master template.
- FIGS. 10-15 illustrate exemplary formation of sub-master template using pattern density doubling in one direction.
- FIGS. 16A and 16B illustrate top down views of exemplary sub-master templates having moiré alignment marks positioned thereon.
- FIG. 17 illustrates a top down view of an exemplary sub-master template having a plurality of alignment marks and test patterns surrounding a mold.
- FIG. 18 illustrates a simplified side view of an exemplary sub-master template.
- FIGS. 19 and 20 illustrate formation of an exemplary sub-master template using pattern density doubling in two directions.
- a lithographic system 10 used to form a relief pattern on substrate 12 .
- Substrate 12 may be coupled to substrate chuck 14 .
- substrate chuck 14 is a vacuum chuck.
- Substrate chuck 14 may be any chuck including, but not limited to, vacuum, pin-type, groove-type, electrostatic, electromagnetic, and/or the like. Exemplary chucks are described in U.S. Pat. No. 6,873,087, which is hereby incorporated by reference herein.
- Substrate 12 and substrate chuck 14 may be further supported by stage 16 .
- Stage 16 may provide motion along the x, y, and z axes.
- Stage 16 , substrate 12 , and substrate chuck 14 may also be positioned on a base (not shown).
- Template 18 Spaced-apart from substrate 12 is template 18 .
- Template 18 may include mesa 20 extending therefrom towards substrate 12 , mesa 20 having a patterning surface 22 thereon. Further, mesa 20 may be referred to as mold 20 . Alternatively, template 18 may be formed without mesa 20 .
- Template 18 and/or mold 20 may be formed from such materials including, but not limited to, fused-silica, quartz, silicon, organic polymers, siloxane polymers, borosilicate glass, fluorocarbon polymers, metal, hardened sapphire, and/or the like.
- patterning surface 22 comprises features defined by a plurality of spaced-apart recesses 24 and/or protrusions 26 , though embodiments of the present invention are not limited to such configurations. Patterning surface 22 may define any original pattern that forms the basis of a pattern to be formed on substrate 12 .
- Template 18 may be coupled to chuck 28 .
- Chuck 28 may be configured as, but not limited to, vacuum, pin-type, groove-type, electrostatic, electromagnetic, and/or other similar chuck types. Exemplary chucks are further described in U.S. Pat. No. 6,873,087, which is hereby incorporated by reference herein. Further, chuck 28 may be coupled to imprint head 30 such that chuck 28 and/or imprint head 30 may be configured to facilitate movement of template 18 .
- System 10 may further comprise fluid dispense system 32 .
- Fluid dispense system 32 may be used to deposit polymerizable material 34 on substrate 12 .
- Polymerizable material 34 may be positioned upon substrate 12 using techniques such as drop dispense, spin-coating, dip coating, chemical vapor deposition (CVD), physical vapor deposition (PVD), thin film deposition, thick film deposition, and/or the like.
- Polymerizable material 34 may be disposed upon substrate 12 before and/or after a desired volume is defined between mold 20 and substrate 12 depending on design considerations.
- Polymerizable material 34 may comprise a monomer mixture as described in U.S. Pat. No. 7,157,036 and U.S. Patent Publication No. 2005/0187339, both of which are hereby incorporated by reference herein.
- system 10 may further comprise energy source 38 coupled to direct energy 40 along path 42 .
- Imprint head 30 and stage 16 may be configured to position template 18 and substrate 12 in superimposition with path 42 .
- System 10 may be regulated by processor 54 in communication with stage 16 , imprint head 30 , fluid dispense system 32 , and/or source 38 , and may operate on a computer readable program stored in memory 56 .
- Either imprint head 30 , stage 16 , or both vary a distance between mold 20 and substrate 12 to define a desired volume therebetween that is filled by polymerizable material 34 .
- imprint head 30 may apply a force to template 18 such that mold 20 contacts polymerizable material 34 .
- source 38 produces energy 40 , e.g., ultraviolet radiation, causing polymerizable material 34 to solidify and/or cross-link conforming to a shape of surface 44 of substrate 12 and patterning surface 22 , defining patterned layer 46 on substrate 12 .
- Patterned layer 46 may comprise a residual layer 48 and a plurality of features shown as protrusions 50 and recessions 52 , with protrusions 50 having a thickness t 1 and residual layer having a thickness t 2 .
- FIG. 3 illustrates a flow diagram for supplying such replications.
- template 18 hereinafter referred to as master template 18
- master template 18 may be replicated to form a plurality of sub-master templates 60 .
- These sub-master templates 60 may then form working templates 62 and/or patterned wafers for device fabrication.
- the device wafers may be patterned as a whole substrate or in a step and repeat manner described in further detail in S. V. Sreenivasan, “Nano-Scale Manufacturing Enabled by Imprint Lithography,” MRS Bulletin, Special Issue on Nanostructured Materials in Information Storage , Vol. 33, September 2008, pp. 854-863, which is hereby incorporated by reference herein.
- FIGS. 4-9 illustrate formation of sub-master template 60 having substantially similar features to master template 18 .
- FIGS. 10-15 further illustrate formation using pattern density doubling in one direction to provide sub-master template 60 a having a double the density of features of master template 18 .
- FIGS. 19 and 20 illustrate formation of sub-master template 60 b from master template 18 that alters features using pattern density doubling in two directions.
- pattern density doubling is not limited herein to the formation of sub-master templates 60 - 60 b , and may be used to increase resolution and/or control dimension of line and space features of any substrate 12 . Additionally, for simplicity, reverse tone formation is described in exemplary formations, however, it should be apparent to one skilled in the art other techniques may be used.
- FIGS. 4-9 illustrate simplified side views of exemplary formation of sub-master template 60 from master template 18 .
- master template 18 may form a relief pattern on a multi-layer substrate 70 .
- Multi-layer substrate 70 may comprise a substrate layer 72 , an etch mask layer 74 , an adhesion layer 76 , and/or a resist layer 78 .
- etch mask layer 74 may be positioned between substrate layer 72 and adhesion layer 76 .
- Adhesion layer 76 may be positioned between etch mask layer 74 and resist layer 78 .
- Substrate layer 72 may be formed of materials including, but not limited to, silicon, gallium arsenide, quartz, fused-silica, sapphire, organic polymers, siloxane polymers, borosilicate glass, fluorocarbon polymers, and/or the like.
- Substrate layer 72 may have a thickness t 3 .
- thickness t 3 of substrate layer 72 may be approximately 0.1 mm to 10 mm.
- Etch mask layer 74 may be formed of materials including, but not limited to, chrome, SiO 2 , SiN, polysilicon, and/or the like. Etch mask layer 74 may have a thickness t 4 . For example, etch mask layer 74 may have a thickness t 4 of approximately 5-50 nm.
- Adhesion layer 76 may be formed of adhesion materials as further described in U.S. Publication No. 2007/0212494, U.S. Publication No. 2007/0017631, and U.S. Publication No. 2007/0021520, all of which are hereby incorporated by reference herein.
- Adhesion layer 76 may have a thickness t 5 .
- adhesion layer 76 may have a thickness t 5 of approximately 1-100 nm.
- Resist layer 78 may be a silicon-containing low-k layer, a BCB layer, or the like. Additionally, resist layer 78 may be an anti-reflective coating (BARC) layer. For example, resist layer 78 may be formed of DUV30J-6, manufactured by Brewer Science, Inc. having an office located in Rolla, Mo. Alternatively, resist layer 78 may be a silicon-free layer. For example, resist layer 78 may consist of the following:
- isobornyl acrylate may comprise approximately 55% of the composition
- n-hexyl acrylate may comprise approximately 27% of the composition
- ethylene glycol diacrylate may comprise approximately 15% of the composition
- 2-hydroxy-2-methyl-l-phenyl-propan-l-one may comprise approximately 3% of the composition.
- One example of the compound 2-hydroxy-2-methyl-l-phenyl-propan-l-one is the initiator DAROCUR® 1173 manufactured by CIBA® having an office located in Tarrytown, N.Y.
- COMPOSITION 1 also includes stabilizers that are well known in the chemical art. Stabilizers generally increase the operational life of the composition.
- Resist layer 78 may include one or more protrusions 64 and/or recessions 66 .
- Protrusions 64 in resist layer 78 may have a width w 1 .
- protrusions 64 in resist layer 78 may have a width w 1 of approximately 40 nm.
- Multiple protrusions 64 in resist layer 78 may have a substantially similar width w 1 , different width w 1 , or a combination thereof.
- Protrusions 64 in resist layer 78 may have a height h 1 .
- protrusions 64 may have a height h 1 of approximately 1 to 4 times the width w 1 .
- Recessions 66 in resist layer 78 may have a width w 2 associated therewith.
- recessions 66 in resist layer 78 may have a width w 2 of approximately 40 nm.
- Multiple recessions 66 in resist layer 78 may have a substantially similar width w 2 , different width w 2 , or a combination thereof.
- the width w 1 of protrusion 66 may be substantially similar, different, or a combination thereof to width w 2 of recession 64 .
- Protrusions 64 and recessions 66 may be formed by techniques including, but not limited to, imprint lithography, e-beam lithography, photolithography (various wavelengths including 193 nm, 157 nm, and 13.2-13.4 nm), x-ray lithography, ion-beam lithography, and atomic beam lithography.
- protrusions 64 and recessions 66 may be formed by imprint lithography as further described in U.S. Pat. No. 6,932,934, U.S. Patent Publication No. 2004/0124566, U.S. Patent Publication No. 2004/0188381, U.S. Patent Publication No. 2004/0211722, all of which are hereby incorporated by reference herein.
- multi-layer substrate 70 may be etched to alter width w 1 of protrusions 64 and/or width w 2 of recessions 66 .
- multi-layer substrate 70 may be etched to reduce width w 1 of protrusions 64 in resist layer 78 .
- width w 2 of recessions 66 in resist layer 78 may be increased.
- width w 2 of recession 66 may increase to 60 nm.
- Multi-layer substrate 70 may be etched using, for example, a trim etching process.
- trim etching processes are further described in U.S. Pat. No. 7,186,656, which is hereby incorporated by reference herein.
- a reverse tone of protrusions 64 may be transferred within multi-layer substrate 70 .
- a conformal layer 80 may be deposited over protrusions 64 and recessions 66 .
- Conformal layer 80 may be deposited by techniques including, but not limited to, contact planarization, spin-on techniques, and the like.
- Conformal layer 80 may be formed of a polymerizable material.
- Exemplary compositions from which to form conformal layer 80 may include:
- hydroxyl-functional polysiloxane may comprise approximately 4% of the composition
- hexamethoxymethylmelamine may comprise approximately 0.95% of the composition
- toluenesulfonic acid may comprise approximately 0.05% of the composition
- methyl amyl ketone may comprise approximately 95% of the composition.
- hydroxyl-functional polysiloxane may comprise approximately 4% of the composition
- hexamethoxymethylmelamine may comprise approximately 0.7% of the composition
- glycidoxypropyltrimethoxysilane may comprise approximately 0.25% of the composition
- toluenesulfonic acid may comprise approximately 0.05% of the composition
- methyl amyl ketone may comprise approximately 95% of the composition.
- Conformal layer 80 may have a first side 82 adjacent to resist layer 78 and an opposing second side 84 distant to resist layer 78 .
- Second side 84 may provide a normalization surface.
- the normalization surface may provide a substantially normalized profile.
- the normalization surface may provide a substantially normalized profile by ensuring distances k p between protrusions 64 and second side 84 are substantially similar in multi-layer substrate 70 and distances k r between recessions 66 and second side 84 are substantially similar in multi-layer substrate 70 .
- second side 84 may be provided as a normalization surface by contacting conformal layer 80 with a planarizing mold 86 having a planar surface 88 .
- Planarizing mold 86 may then be separated from conformal layer 80 and radiation impinged upon conformal layer 80 to polymerize and, therefore, to solidify the same.
- the radiation impinged on conformal layer 80 may be ultraviolet, thermal, electromagnetic, electrostatic, visible light, heat, and/or the like.
- radiation impinged upon conformal layer 80 may be impinged prior to separation of planarizing mold 86 from conformal layer 80 .
- a low surface energy coating 90 may be deposited upon planarizing mold 86 to reduce adherence of conformal layer 80 to planarizing mold 86 .
- release properties of conformal layer 80 may be improved by including a surfactant.
- the surfactant may provide the desired release properties to reduce adherence of conformal layer 80 to the planarizing mold 86 .
- a surfactant may be defined as any molecule, one tail of which is hydrophobic.
- Surfactants may be either fluorine containing, e.g., include a fluorine chain, or may not include any fluorine in the surfactant molecule structure.
- An exemplary surfactant is available under the trade name ZONYL® FSO-100, manufactured by E.I. du Pont de Nemours and Company, with an office located in Wilmington, Del.
- ZONYL® FSO-100 has a general structure of R 1 R 2 , where R 1 ⁇ F(CF 2 CF 2 ) Y , with Y being in a range of approximately 1 to 7, inclusive and R 2 ⁇ CH 2 CH 2 O(CH 2 CH 2 O) X H, with X being in a range of approximately 0 to 15, inclusive.
- the surfactant may be used in conjunction with, or in lieu of, low surface energy coating 90 that may be applied to the planarizing mold 86 .
- portions of conformal layer 80 may be removed to provide crown surface 92 .
- conformal layer 80 may be etched to expose crown surface 92 .
- a chemical mechanical polishing/planarization process may be employed to remove portions of conformal layer 80 to provide crown surface 92 .
- Crown surface 92 may be defined by an exposed surface 94 of each protrusion 64 and surface 96 of conformal layer 80 remaining after etching.
- crown surface 92 may be subjected to an anisotropic plasma etch.
- the etch chemistry of the anisotropic etch may be selected to maximize etching of the exposed surface 94 of protrusions 64 and minimizing etching of surface 96 of conformal layer 80 .
- a hard mask 98 may be formed adjacent to surface 96 of conformal layer 80 .
- Hard mask 98 may be the result of interaction of silicon-containing polymerizable material and oxygen plasma.
- portions of conformal layer 80 , resist layer 78 , and adhesion layer 76 may be removed providing regions 99 in superimposition with etch mask layer 74 .
- an etch may further be used to define protrusions 100 and recessions 102 forming a first patterned substrate 10 .
- an anisotropic fluorine plasma etch may further be used to define protrusions 100 and recessions 102 in etch mask layer 74 forming a sub-master template 60 .
- Protrusions 100 in etch mask layer 74 may have a width w 3 and recessions 102 in etch mask layer 74 may have a width w 4 .
- width w 3 of protrusions 100 may have a magnitude of 60 nm and width w 4 may have a magnitude of 20 nm.
- Adhesion layer 76 , resist layer 78 , conformal layer 80 , and hard mask 98 may be subsequently removed.
- conformal layer 80 is formed from a silicon-containing photo-responsive material, the removal of conformal layer 80 may be achieved in a manner consistent with the removal of silicon-containing photo-resist material. As a result, it may not be necessary to employ a blanket fluorine etch in the process above.
- FIGS. 10-15 illustrate exemplary formation of sub-master template 60 a from sub-master template 60 using pattern density doubling.
- Pattern density doubling of sub-template 60 may provide features 100 and/or 102 of sub-master template 60 to be altered to form sub-master template 60 a .
- the pattern provided by protrusions 100 and/or recessions 102 of sub-master template 60 may be further reduced and the number of protrusions 100 and/or recessions 102 increased to form the pattern on sub-master template 60 a (e.g., half-pitch features).
- an adhesion layer 76 a and a resist layer 78 a may be positioned on sub-master template 60 such that etch mask layer 74 is positioned between substrate layer 72 and adhesion layer 76 a and adhesion layer 76 a is positioned between etch mask layer 74 and resist layer 78 a .
- Adhesion layer 76 a may be substantially similar to and have substantially similar composition to adhesion layer 76 .
- Resist layer 78 a may be substantially similar to and/or have substantially the same composition to resist layer 78 .
- resist layer 78 a may have a plurality of protrusions 64 a and recessions 66 a .
- Protrusions 64 a of resist layer 78 a may have a width w 5 and recessions may have a width w 6 .
- protrusions 64 a may have a width w 5 of approximately 40 nm and recessions 66 a may have a width w 6 of approximately 40 nm.
- Width w 5 of protrusions 64 a may be increased, reduced, and/or substantially similar to width w 3 of protrusion 100 and/or width w 1 of protrusion 64 .
- width w 6 of recession 66 a may be increased, reduced, and/or substantially similar to width w 4 of recession 102 and/or width w 2 of recession 66 .
- Protrusions 64 a and recessions 66 a of resist layer 78 a may be formed using techniques, including, but not limited to, imprint lithography, e-beam lithography, photolithography (various wavelengths including 193 nm, 157 nm, and 13.2-13.4 nm), x-ray lithography, ion-beam lithography, and atomic beam lithography.
- protrusions 64 a and recessions 66 a of resist layer 78 a may be formed using master template 18 using imprint lithography.
- Protrusions 64 a may be positioned in superimposition with protrusions 100 .
- protrusion 64 a may be positioned such that each center C 1 of each protrusion 64 a is substantially aligned with center C 2 of protrusion 100 .
- Substantial placement error in the x direction and the theta ⁇ during positioning of protrusions 64 a to be in superimposition with protrusions 100 and substantially centered may inhibit the formation of the density pattern (e.g., double density) of sub-master template 60 a (shown in FIG. 15 ) as compared to master template 18 (shown in FIG. 4 ).
- a placement error having a magnitude greater than 10% in the x-direction may offset the pitch of the pattern leading to distortions. (e.g., 5 nm placement error using master template 18 having a 100 nm pitch estimated to provide sub-master template 60 a with 50 nm pitch).
- protrusions 64 a and protrusions 100 may be substantially aligned in the x direction and the theta ⁇ direction prior to patterning. It should be noted that alignment in the y direction may also be incorporated. In some circumstances and depending on design considerations, however, alignment in the y direction may not be needed.
- Moire pattern alignment may also be used to provide substantially centered protrusions 64 a and 100 .
- moiré pattern alignment may be used to center recessions 24 of master template 18 with respect to protrusions 100 of sub-master template 60 .
- master template 18 and sub-master template 60 may comprise substantially the same material, such as, for example, fused silica. By using substantially similar materials, thermal properties of master template 18 and sub-master template 60 may be substantially similar.
- sub-master template 60 may be subjected to a trim etching process to alter width w 5 of protrusions 64 a and width w 6 of recessions 66 a .
- the trim etching process may reduced width w 5 of protrusions 64 a and increase width w 6 of recessions 66 a .
- width w 5 of protrusions 64 a may be reduced from 40 nm to 20 nm and width w 6 of recessions 66 a may be increased from 40 nm to 60 nm.
- This trim etching process may be substantially similar to the trim etching process described above with respect to multi-layer substrate 70 .
- a reverse tone of protrusions 64 a may be transferred into sub-master template 60 .
- a conformal layer 80 a may be deposited adjacent to protrusions 64 a .
- Conformal layer 80 a may be deposited using methods including, but not limited to, spin-on techniques, contact planarization, and the like.
- Conformal layer 80 a may be substantially similar to and/or have substantially similar composition to conformal layer 80 .
- Conformal layer 80 a may have a first side 82 a adjacent to resist layer 78 a and an opposing second side 84 a distant to resist layer 78 a .
- Second side 84 a may provide a normalization surface.
- the normalization surface may provide a substantially normalized profile.
- the normalization surface may provided a substantially normalized profile by ensuring distances k p2 between protrusions 64 a and second side 84 a are substantially similar in sub-master template 60 and distances k r2 between recessions 66 a and second side 84 a are substantially similar in sub-master template 60 .
- conformal layer 80 a may be contacted by a planarizing mold 86 having a planar surface 88 as described in detail and shown in FIG. 5 .
- portions of conformal layer 80 a may be removed to provide crown surface 92 a .
- conformal layer 80 a may be etched to expose crown surface 92 a .
- the techniques used to remove portions of conformal layer 80 a may be substantially similar to the techniques used to remove portions of conformal layer 80 (e.g., blanket etch).
- Crown surface 92 a may be defined by an exposed surface 94 a of each protrusion 64 a and surface 96 a of conformal layer 80 a that remains after etching.
- crown surface 92 a may be subjected to an etch process to form a hard mask 98 a and expose regions 99 a in superimposition with protrusions 100 .
- crown surface 92 a may be subjected to an anisotropic plasma etch.
- the etch chemistry of the anisotropic etch may be selected to maximize etching of the exposed surface 94 a of protrusions 64 a and minimizing etching of surface 96 a of conformal layer 80 a .
- the hard mask 98 a may be formed adjacent to surface 96 of conformal layer 80 by the interaction of silicon-containing polymerizable material and oxygen plasma. As a result of hard mask 98 a and anisotropy of the etch process, regions 99 a in superimpositions with protrusions 100 may be exposed.
- an etch process may be used to transfer the pattern provided by regions 99 a to etch mask layer 74 .
- an anisotropic fluorine plasma etch may be employed to transfer the pattern provided by regions 99 a to etch mask layer 74 .
- width w 3 of protrusions 100 in etch mask layer 74 may be reduced forming sub-master template 60 a such that the magnitude of width w 3 of protrusions 100 may be reduced in sub-master template 60 a as compared to sub-master template 60 .
- width w 3 in sub-master template 60 may be 40 nm as compared to 20 nm in sub-master template 60 a .
- Recessions 102 in etch mask layer 74 may remain substantially similar in sub-master template 60 a as compared to sub-master template 60 . After patterning protrusions 100 in etch mask layer 74 , adhesion layer 76 a , resist layer 78 a , and conformal layer 80 a may be subsequently removed.
- patterning of sub-master templates 60 and/or 60 a by master template 18 may be facilitated by the use of alignment marks 200 and/or 300 .
- the pattern of alignment marks 200 of master template 18 may need to be transferred to sub-master templates 60 and/or 60 a . In other circumstances, however, the pattern of alignment marks 200 of master template 18 may not need to be transferred to sub-master template 60 and/or 60 a.
- alignment marks 200 may be placed on a secondary mold 20 a as illustrated in FIGS. 17 and 18 .
- Secondary mold 20 a may be spaced apart from mold 20 .
- secondary mold 20 a may be designed such that there is limited or no contact of secondary mold 20 a with polymerizable material 34 . Without contact to polymerizable material 34 , secondary mold 20 a may minimize or prevent patterning of alignment marks 200 .
- alignment may be employed in combination with methods of fabricating sub-lithographic sized line and space patterns as described in U.S. Pat. No. 6,759,180, which is hereby incorporated by reference.
- alignment marks 200 and/or 300 may be increased to further facilitate alignment in the x direction and/or the theta ⁇ direction. Additionally, alignment marks 200 and/or 300 of master template 18 , sub-master template 60 , and/or sub-master template 60 a , respectively, may be positioned at a distance from mold 20 .
- FIGS. 19 and 20 illustrate formation of sub-master template 60 b from sub-master template 60 a using pattern density doubling in two directions.
- sub-master template 60 a may be patterned along a second direction D 2 using the techniques described herein to form sub-master template 60 b having pillars 104 .
- Pillars 104 may have a dimension c 1 along direction D 1 and a dimension c 2 along direction D 2 .
- Sub-master template 60 b may be patterned employing the above-mentioned processes used to form sub-master templates 60 and/or 60 a . During formation, sub-master template 60 b and/or master template 18 may be rotated approximately 90 degrees with respect to the other.
- alignment marks 200 on master template 18 and/or alignment marks 300 on sub-master template 60 b may be used.
- alignment mark 300 a may be aligned with alignment mark 200 a of master template 18 and alignment mark 300 b may be aligned with alignment mark 200 b of master template 18 .
- alignment mark 300 a may be aligned with alignment mark 200 b of master template 18 and alignment mark 300 b may be aligned with alignment mark 200 a of master template 18 .
- Substantial placement error in the theta ⁇ direction during patterning in the second direction D 2 may result in distortions in sub-template 60 b . It may be noted that placement error in the x direction and the y direction may be negligible. As such, patterning in the second direction D 2 may be considered a robust process.
- sub-template 60 b may be employed as further described in U.S. Patent Publication No. 2004/0188381, which is hereby incorporated by reference herein.
- sub-template 60 b may be defined by a plurality of contact holes.
Abstract
Description
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- isobornyl acrylate
- n-hexyl acrylate
- ethylene glycol diacrylate
- 2-hydroxy-2-methyl-l-phenyll-propan-l-one
-
- hydroxyl-functional polysiloxane
- hexamethoxymethylmelamine
- toluenesulfonic acid
- methyl amyl ketone
-
- hydroxyl-functional polysiloxane
- hexamethoxymethylmelamine
- gamma-glycidoxypropyltrimethoxysilane
- toluenesulfonic acid
- methyl amyl ketone
Claims (10)
Priority Applications (2)
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PCT/US2008/014049 WO2009085286A1 (en) | 2007-12-28 | 2008-12-24 | Template pattern density doubling |
US12/344,100 US8012394B2 (en) | 2007-12-28 | 2008-12-24 | Template pattern density doubling |
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US1741207P | 2007-12-28 | 2007-12-28 | |
US12/344,100 US8012394B2 (en) | 2007-12-28 | 2008-12-24 | Template pattern density doubling |
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US20090166933A1 US20090166933A1 (en) | 2009-07-02 |
US8012394B2 true US8012394B2 (en) | 2011-09-06 |
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US12/344,100 Expired - Fee Related US8012394B2 (en) | 2007-12-28 | 2008-12-24 | Template pattern density doubling |
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US (1) | US8012394B2 (en) |
TW (1) | TW200937112A (en) |
WO (1) | WO2009085286A1 (en) |
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US8309462B1 (en) | 2011-09-29 | 2012-11-13 | Sandisk Technologies Inc. | Double spacer quadruple patterning with self-connected hook-up |
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Also Published As
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US20090166933A1 (en) | 2009-07-02 |
TW200937112A (en) | 2009-09-01 |
WO2009085286A1 (en) | 2009-07-09 |
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