US7674699B2 - III group nitride semiconductor substrate, substrate for group III nitride semiconductor device, and fabrication methods thereof - Google Patents
III group nitride semiconductor substrate, substrate for group III nitride semiconductor device, and fabrication methods thereof Download PDFInfo
- Publication number
- US7674699B2 US7674699B2 US11/431,106 US43110606A US7674699B2 US 7674699 B2 US7674699 B2 US 7674699B2 US 43110606 A US43110606 A US 43110606A US 7674699 B2 US7674699 B2 US 7674699B2
- Authority
- US
- United States
- Prior art keywords
- substrate
- nitride semiconductor
- film
- iii group
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related, expires
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/04—Pattern deposit, e.g. by using masks
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02491—Conductive materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02513—Microstructure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/512,549 US8207054B2 (en) | 2003-10-17 | 2009-07-30 | Group III nitride semiconductor substrate, substrate for group III nitride semiconductor device, and methods of making same |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003-358350 | 2003-10-17 | ||
JP2003358350A JP4396816B2 (en) | 2003-10-17 | 2003-10-17 | Group III nitride semiconductor substrate and manufacturing method thereof |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/512,549 Division US8207054B2 (en) | 2003-10-17 | 2009-07-30 | Group III nitride semiconductor substrate, substrate for group III nitride semiconductor device, and methods of making same |
Publications (2)
Publication Number | Publication Date |
---|---|
US20060270200A1 US20060270200A1 (en) | 2006-11-30 |
US7674699B2 true US7674699B2 (en) | 2010-03-09 |
Family
ID=34614943
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/431,106 Expired - Fee Related US7674699B2 (en) | 2003-10-17 | 2006-05-10 | III group nitride semiconductor substrate, substrate for group III nitride semiconductor device, and fabrication methods thereof |
US12/512,549 Expired - Fee Related US8207054B2 (en) | 2003-10-17 | 2009-07-30 | Group III nitride semiconductor substrate, substrate for group III nitride semiconductor device, and methods of making same |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/512,549 Expired - Fee Related US8207054B2 (en) | 2003-10-17 | 2009-07-30 | Group III nitride semiconductor substrate, substrate for group III nitride semiconductor device, and methods of making same |
Country Status (2)
Country | Link |
---|---|
US (2) | US7674699B2 (en) |
JP (1) | JP4396816B2 (en) |
Cited By (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080035052A1 (en) * | 2005-02-23 | 2008-02-14 | Genesis Photonics Inc. | Method for manufacturing a semiconductor substrate |
US20080182092A1 (en) * | 2007-01-17 | 2008-07-31 | Crystal Is, Inc. | Defect reduction in seeded aluminum nitride crystal growth |
US20080187016A1 (en) * | 2007-01-26 | 2008-08-07 | Schowalter Leo J | Thick Pseudomorphic Nitride Epitaxial Layers |
US20090116169A1 (en) * | 2007-11-01 | 2009-05-07 | Jung-Chih Tsao | Alpha Tantalum Capacitor Plate |
US20090146170A1 (en) * | 2007-11-30 | 2009-06-11 | The Regents Of The University Of California | High light extraction efficiency nitride based light emitting diode by surface roughening |
US20090194784A1 (en) * | 2007-01-16 | 2009-08-06 | Showa Denko K.K. | Group-iii nitride compound semiconductor device and production method thereof, group-iii nitride compound semiconductor light-emitting device and production method thereof, and lamp |
US20100135349A1 (en) * | 2001-12-24 | 2010-06-03 | Crystal Is, Inc. | Nitride semiconductor heterostructures and related methods |
US20100140536A1 (en) * | 2006-03-13 | 2010-06-10 | Tohoku University | Gallium nitride-based material |
US20100187541A1 (en) * | 2005-12-02 | 2010-07-29 | Crystal Is, Inc. | Doped Aluminum Nitride Crystals and Methods of Making Them |
US20100264460A1 (en) * | 2007-01-26 | 2010-10-21 | Grandusky James R | Thick pseudomorphic nitride epitaxial layers |
US20100314551A1 (en) * | 2009-06-11 | 2010-12-16 | Bettles Timothy J | In-line Fluid Treatment by UV Radiation |
US20100327291A1 (en) * | 2005-12-12 | 2010-12-30 | Kyma Technologies, Inc. | Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancement |
US20110008621A1 (en) * | 2006-03-30 | 2011-01-13 | Schujman Sandra B | Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them |
US20110127571A1 (en) * | 2008-03-27 | 2011-06-02 | Nitek, Inc. | Mixed source growth apparatus and method of fabricating iii-nitride ultraviolet emitters |
US8962359B2 (en) | 2011-07-19 | 2015-02-24 | Crystal Is, Inc. | Photon extraction from nitride ultraviolet light-emitting devices |
US8975165B2 (en) | 2011-02-17 | 2015-03-10 | Soitec | III-V semiconductor structures with diminished pit defects and methods for forming the same |
US9028612B2 (en) | 2010-06-30 | 2015-05-12 | Crystal Is, Inc. | Growth of large aluminum nitride single crystals with thermal-gradient control |
US9299880B2 (en) | 2013-03-15 | 2016-03-29 | Crystal Is, Inc. | Pseudomorphic electronic and optoelectronic devices having planar contacts |
US9447521B2 (en) | 2001-12-24 | 2016-09-20 | Crystal Is, Inc. | Method and apparatus for producing large, single-crystals of aluminum nitride |
US9771666B2 (en) | 2007-01-17 | 2017-09-26 | Crystal Is, Inc. | Defect reduction in seeded aluminum nitride crystal growth |
Families Citing this family (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8809867B2 (en) * | 2002-04-15 | 2014-08-19 | The Regents Of The University Of California | Dislocation reduction in non-polar III-nitride thin films |
WO2007023911A1 (en) * | 2005-08-25 | 2007-03-01 | Tohoku Techno Arch Co., Ltd. | Process for producing semiconductor substrate |
KR100661602B1 (en) * | 2005-12-09 | 2006-12-26 | 삼성전기주식회사 | Method for forming the vertically structured gan type light emitting diode device |
JP2007191321A (en) * | 2006-01-17 | 2007-08-02 | Sumitomo Electric Ind Ltd | Method for producing nitride substrate, nitride substrate, and nitride-based semiconductor device |
US7691732B2 (en) | 2008-06-18 | 2010-04-06 | Sumitomo Electric Industries, Ltd. | Manufacturing method of nitride substrate, nitride substrate, and nitride-based semiconductor device |
RU2315135C2 (en) | 2006-02-06 | 2008-01-20 | Владимир Семенович Абрамов | Method of growing nonpolar epitaxial heterostructures based on group iii element nitrides |
GB2436398B (en) * | 2006-03-23 | 2011-08-24 | Univ Bath | Growth method using nanostructure compliant layers and HVPE for producing high quality compound semiconductor materials |
JP2008066355A (en) * | 2006-09-05 | 2008-03-21 | Sumitomo Electric Ind Ltd | Manufacturing method of group iii nitride substrate, group iii nitride substrate, group iii nitride substrate with epitaxial layer, group iii nitride device, manufacturing method of group iii nitride substrate with epitaxial layer, and manufacturing method of group iii nitride device |
JP5261923B2 (en) * | 2006-10-17 | 2013-08-14 | サンケン電気株式会社 | Compound semiconductor device |
EP2111634A4 (en) * | 2007-02-12 | 2014-01-08 | Univ California | Al(x)ga(1-x)n-cladding-free nonpolar iii-nitride based laser diodes and light emitting diodes |
DE102007010286B4 (en) * | 2007-03-02 | 2013-09-05 | Freiberger Compound Materials Gmbh | A method for producing a compound semiconductor material, a III-N layer or a III-N bulk crystal, a reactor for producing the compound semiconductor material, compound semiconductor material, III-N bulk crystal and III-N crystal layer |
US20080290349A1 (en) * | 2007-05-24 | 2008-11-27 | Hitachi Cable, Ltd. | Compound semiconductor wafer, light emitting diode and manufacturing method thereof |
JP5076094B2 (en) * | 2007-06-12 | 2012-11-21 | 株式会社 東北テクノアーチ | Group III nitride single crystal manufacturing method, base crystal substrate having metal nitride layer, and multilayer structure wafer |
US8441018B2 (en) * | 2007-08-16 | 2013-05-14 | The Trustees Of Columbia University In The City Of New York | Direct bandgap substrates and methods of making and using |
JP2009065048A (en) * | 2007-09-07 | 2009-03-26 | Rohm Co Ltd | Semiconductor light-emitting element and method of manufacturing the same |
US8652947B2 (en) * | 2007-09-26 | 2014-02-18 | Wang Nang Wang | Non-polar III-V nitride semiconductor and growth method |
US8257491B2 (en) * | 2007-10-18 | 2012-09-04 | The United States Of America, As Represented By The Administrator Of The National Aeronautics And Space Administration | Rhombohedral cubic semiconductor materials on trigonal substrate with single crystal properties and devices based on such materials |
WO2009070625A1 (en) * | 2007-11-27 | 2009-06-04 | Nanocrystal, Llc | Ultra-low dislocation density group iii - nitride semiconductor substrates grown via nano-or micro-particle film |
JP5272390B2 (en) * | 2007-11-29 | 2013-08-28 | 豊田合成株式会社 | Group III nitride semiconductor manufacturing method, group III nitride semiconductor light emitting device manufacturing method, group III nitride semiconductor light emitting device, and lamp |
JP5560528B2 (en) * | 2008-01-28 | 2014-07-30 | 住友電気工業株式会社 | Method for producing group III nitride single crystal ingot and method for producing group III nitride single crystal substrate |
US8878189B2 (en) | 2009-03-27 | 2014-11-04 | Dowa Holdings Co., Ltd. | Group III nitride semiconductor growth substrate, group III nitride semiconductor epitaxial substrate, group III nitride semiconductor element and group III nitride semiconductor free-standing substrate, and method of producing the same |
WO2010118087A1 (en) * | 2009-04-08 | 2010-10-14 | Efficient Power Conversion Corporation | Enhancement mode gan hemt device and method for fabricating the same |
JP2011146639A (en) * | 2010-01-18 | 2011-07-28 | Sumitomo Electric Ind Ltd | Group iii nitride-based semiconductor element |
JP4865047B2 (en) * | 2010-02-24 | 2012-02-01 | 株式会社東芝 | Crystal growth method |
KR20120092326A (en) * | 2011-02-11 | 2012-08-21 | 서울옵토디바이스주식회사 | Non-polar light emitting diode having photonic crystal structure and method of fabricating the same |
FR2997420B1 (en) * | 2012-10-26 | 2017-02-24 | Commissariat Energie Atomique | PROCESS FOR GROWING AT LEAST ONE NANOFIL FROM A TWO-STEP NITRIDE TRANSITION METAL LAYER |
FR2997557B1 (en) | 2012-10-26 | 2016-01-01 | Commissariat Energie Atomique | NANOFIL ELECTRONIC DEVICE WITH TRANSITION METAL BUFFER LAYER, METHOD OF GROWING AT LEAST ONE NANOWIL, AND DEVICE MANUFACTURING METHOD |
JP5928366B2 (en) * | 2013-02-13 | 2016-06-01 | 豊田合成株式会社 | Method for producing group III nitride semiconductor |
JP6048233B2 (en) * | 2013-03-12 | 2016-12-21 | 豊田合成株式会社 | Group III nitride semiconductor light emitting device |
US9614026B2 (en) | 2013-03-13 | 2017-04-04 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | High mobility transport layer structures for rhombohedral Si/Ge/SiGe devices |
US9096050B2 (en) * | 2013-04-02 | 2015-08-04 | International Business Machines Corporation | Wafer scale epitaxial graphene transfer |
US9574135B2 (en) * | 2013-08-22 | 2017-02-21 | Nanoco Technologies Ltd. | Gas phase enhancement of emission color quality in solid state LEDs |
EP3125312A4 (en) * | 2014-03-26 | 2017-08-09 | JX Nippon Oil & Energy Corporation | Epitaxial growth substrate and light-emitting element using same |
WO2016088696A1 (en) | 2014-12-01 | 2016-06-09 | 日本碍子株式会社 | Group 13 element nitride crystal substrate and function element |
WO2016093033A1 (en) | 2014-12-11 | 2016-06-16 | 日本碍子株式会社 | Group 13 element nitride crystal layer and function element |
US10014383B2 (en) * | 2014-12-17 | 2018-07-03 | Infineon Technologies Ag | Method for manufacturing a semiconductor device comprising a metal nitride layer and semiconductor device |
US9666754B2 (en) | 2015-05-27 | 2017-05-30 | Samsung Electronics Co., Ltd. | Method of manufacturing semiconductor substrate and substrate for semiconductor growth |
KR102378823B1 (en) | 2015-09-07 | 2022-03-28 | 삼성전자주식회사 | Methods of manufacturing semiconductor substrates and semiconductor light emitting device thereof |
WO2017098756A1 (en) | 2015-12-11 | 2017-06-15 | 日本碍子株式会社 | Group 13 nitride crystal substrate and functional element |
CN107039250B (en) * | 2016-02-03 | 2018-08-21 | 中晟光电设备(上海)股份有限公司 | A kind of method of the material of growing gallium nitride on a sapphire substrate, gallium nitride material and application thereof |
Citations (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63188983A (en) | 1987-01-31 | 1988-08-04 | Ricoh Co Ltd | Semiconductor light emitting device |
JPH11195814A (en) | 1997-10-10 | 1999-07-21 | Toyoda Gosei Co Ltd | Gan-based semiconductor element |
JP2000012900A (en) | 1998-06-18 | 2000-01-14 | Sumitomo Electric Ind Ltd | GaN SINGLE CRYSTAL SUBSTRATE AND MANUFACTURE THEREOF |
JP2000022212A (en) | 1998-06-30 | 2000-01-21 | Sumitomo Electric Ind Ltd | GaN SINGLE CRYSTAL SUBSTRATE AND ITS MANUFACTURE |
JP2000049092A (en) | 1998-05-29 | 2000-02-18 | Matsushita Electron Corp | Method for growing crystal of nitride semiconductor, nitride semiconductor device, and manufacture of the device |
JP2000114178A (en) | 1998-08-06 | 2000-04-21 | Showa Denko Kk | Semiconductor substrate |
US6100545A (en) | 1997-10-10 | 2000-08-08 | Toyoda Gosei Co., Ltd. | GaN type semiconductor device |
JP2000252217A (en) | 1999-03-01 | 2000-09-14 | Sumitomo Electric Ind Ltd | Production of compound semiconductor |
JP2000323753A (en) | 1999-03-09 | 2000-11-24 | Toyoda Gosei Co Ltd | Fabrication of group iii nitride based compound semiconductor element |
US6218207B1 (en) | 1998-05-29 | 2001-04-17 | Mitsushita Electronics Corporation | Method for growing nitride semiconductor crystals, nitride semiconductor device, and method for fabricating the same |
US6368733B1 (en) | 1998-08-06 | 2002-04-09 | Showa Denko K.K. | ELO semiconductor substrate |
US6413627B1 (en) | 1998-06-18 | 2002-07-02 | Sumitomo Electric Industries, Ltd. | GaN single crystal substrate and method of producing same |
US6426512B1 (en) | 1999-03-05 | 2002-07-30 | Toyoda Gosei Co., Ltd. | Group III nitride compound semiconductor device |
JP2002343728A (en) | 2001-05-21 | 2002-11-29 | Nec Corp | Gallium nitride crystalline substrate and method for manufacturing the same |
JP2003178984A (en) | 2001-03-27 | 2003-06-27 | Nec Corp | Iii group nitride semiconductor substrate, and method for manufacturing it |
JP2004039810A (en) | 2002-07-02 | 2004-02-05 | Nec Corp | Group iii nitride semiconductor substrate and its manufacturing method |
JP2004331453A (en) | 2003-05-08 | 2004-11-25 | Sumitomo Electric Ind Ltd | Group iii-v compound crystal and its producing method |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7723216B2 (en) * | 2006-05-09 | 2010-05-25 | The Regents Of The University Of California | In-situ defect reduction techniques for nonpolar and semipolar (Al, Ga, In)N |
GB0702560D0 (en) * | 2007-02-09 | 2007-03-21 | Univ Bath | Production of Semiconductor devices |
DE102010011895B4 (en) * | 2010-03-18 | 2013-07-25 | Freiberger Compound Materials Gmbh | Process for the preparation of a group III nitride semipolar crystal, substrate, free-standing semipolar substrate and use of the substrates |
-
2003
- 2003-10-17 JP JP2003358350A patent/JP4396816B2/en not_active Expired - Fee Related
-
2006
- 2006-05-10 US US11/431,106 patent/US7674699B2/en not_active Expired - Fee Related
-
2009
- 2009-07-30 US US12/512,549 patent/US8207054B2/en not_active Expired - Fee Related
Patent Citations (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63188983A (en) | 1987-01-31 | 1988-08-04 | Ricoh Co Ltd | Semiconductor light emitting device |
JPH11195814A (en) | 1997-10-10 | 1999-07-21 | Toyoda Gosei Co Ltd | Gan-based semiconductor element |
US6100545A (en) | 1997-10-10 | 2000-08-08 | Toyoda Gosei Co., Ltd. | GaN type semiconductor device |
JP2000049092A (en) | 1998-05-29 | 2000-02-18 | Matsushita Electron Corp | Method for growing crystal of nitride semiconductor, nitride semiconductor device, and manufacture of the device |
US6218207B1 (en) | 1998-05-29 | 2001-04-17 | Mitsushita Electronics Corporation | Method for growing nitride semiconductor crystals, nitride semiconductor device, and method for fabricating the same |
US6413627B1 (en) | 1998-06-18 | 2002-07-02 | Sumitomo Electric Industries, Ltd. | GaN single crystal substrate and method of producing same |
JP2000012900A (en) | 1998-06-18 | 2000-01-14 | Sumitomo Electric Ind Ltd | GaN SINGLE CRYSTAL SUBSTRATE AND MANUFACTURE THEREOF |
JP2000022212A (en) | 1998-06-30 | 2000-01-21 | Sumitomo Electric Ind Ltd | GaN SINGLE CRYSTAL SUBSTRATE AND ITS MANUFACTURE |
JP2000114178A (en) | 1998-08-06 | 2000-04-21 | Showa Denko Kk | Semiconductor substrate |
US6368733B1 (en) | 1998-08-06 | 2002-04-09 | Showa Denko K.K. | ELO semiconductor substrate |
JP2000252217A (en) | 1999-03-01 | 2000-09-14 | Sumitomo Electric Ind Ltd | Production of compound semiconductor |
US6426512B1 (en) | 1999-03-05 | 2002-07-30 | Toyoda Gosei Co., Ltd. | Group III nitride compound semiconductor device |
JP2000323753A (en) | 1999-03-09 | 2000-11-24 | Toyoda Gosei Co Ltd | Fabrication of group iii nitride based compound semiconductor element |
JP2003178984A (en) | 2001-03-27 | 2003-06-27 | Nec Corp | Iii group nitride semiconductor substrate, and method for manufacturing it |
US6924159B2 (en) | 2001-03-27 | 2005-08-02 | Nec Corporation | Semiconductor substrate made of group III nitride, and process for manufacture thereof |
JP2002343728A (en) | 2001-05-21 | 2002-11-29 | Nec Corp | Gallium nitride crystalline substrate and method for manufacturing the same |
EP1271627A2 (en) | 2001-05-21 | 2003-01-02 | Nec Corporation | Method of forming an epitaxially grown nitride-based compound semiconductor crystal substrate structure and respective substrate structure |
US6812051B2 (en) | 2001-05-21 | 2004-11-02 | Nec Corporation | Method of forming an epitaxially grown nitride-based compound semiconductor crystal substrate structure and the same substrate structure |
JP2004039810A (en) | 2002-07-02 | 2004-02-05 | Nec Corp | Group iii nitride semiconductor substrate and its manufacturing method |
US20060046325A1 (en) | 2002-07-02 | 2006-03-02 | Nec Corporation | Group III nitride semiconductor substrate and its manufacturing method |
US7189588B2 (en) | 2002-07-02 | 2007-03-13 | Nec Corporation | Group III nitride semiconductor substrate and its manufacturing method |
JP2004331453A (en) | 2003-05-08 | 2004-11-25 | Sumitomo Electric Ind Ltd | Group iii-v compound crystal and its producing method |
US20050227472A1 (en) * | 2003-05-08 | 2005-10-13 | Seiji Nakahata | Group III-V Crystal and Manufacturing method thereof |
US7485484B2 (en) | 2003-05-08 | 2009-02-03 | Sumitomo Electric Industries, Ltd. | Group III-V crystal |
Non-Patent Citations (5)
Title |
---|
L. Bachmann et al., "Observations on the Morphological Changes in Thin Copper Deposits during Annealing and Oxidation," Journal of Applied Physics, vol. 36, No. 1, Jan. 1965, pp. 304-308. |
M. Kuramoto et al., "Room-Temperature Continuous-Wave Operation of InGaN Multi-Quantum-Well Laser Diodes Grown on an n-GaN Substrate with a Backside n-Contact," Jpn. J. Appl. Phys., vol. 38, No. 2B, (1999) Pt. 2, pp. L184-L186. |
M.L. Gimpl et al., "Amorphous Oxide Layers on Gold and Nickel Films Observed by Electron Microscopy," Journal of Applied Physics, vol. 35, No. 12, Dec. 1964, pp. 3572-3575. |
O. Nam et al., "Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy," Appl. Phys. Lett., vol. 71, No. 18, Nov. 3, 1997, pp. 2638-2640. |
T.S. Zheleva et al., "Pendeo-Epitaxy-A New Approach for Lateral Growth of Gallium Nitride Structures," MRS Internet J. Nitride Semicond. Res. 1999, 4S1, G3, 38, 6 pgs. |
Cited By (44)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9447521B2 (en) | 2001-12-24 | 2016-09-20 | Crystal Is, Inc. | Method and apparatus for producing large, single-crystals of aluminum nitride |
US8222650B2 (en) | 2001-12-24 | 2012-07-17 | Crystal Is, Inc. | Nitride semiconductor heterostructures and related methods |
US20100135349A1 (en) * | 2001-12-24 | 2010-06-03 | Crystal Is, Inc. | Nitride semiconductor heterostructures and related methods |
US20080035052A1 (en) * | 2005-02-23 | 2008-02-14 | Genesis Photonics Inc. | Method for manufacturing a semiconductor substrate |
US20100187541A1 (en) * | 2005-12-02 | 2010-07-29 | Crystal Is, Inc. | Doped Aluminum Nitride Crystals and Methods of Making Them |
US9525032B2 (en) | 2005-12-02 | 2016-12-20 | Crystal Is, Inc. | Doped aluminum nitride crystals and methods of making them |
US8747552B2 (en) | 2005-12-02 | 2014-06-10 | Crystal Is, Inc. | Doped aluminum nitride crystals and methods of making them |
US20100327291A1 (en) * | 2005-12-12 | 2010-12-30 | Kyma Technologies, Inc. | Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancement |
US7897490B2 (en) * | 2005-12-12 | 2011-03-01 | Kyma Technologies, Inc. | Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancement |
US8637848B2 (en) | 2005-12-12 | 2014-01-28 | Kyma Technologies, Inc. | Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancement |
US8349711B2 (en) | 2005-12-12 | 2013-01-08 | Kyma Technologies, Inc. | Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancement |
US20110198590A1 (en) * | 2005-12-12 | 2011-08-18 | Preble Edward A | Single crystal group iii nitride articles and method of producing same by hvpe method incorporating a polycrystalline layer for yield enhancement |
US20100162945A1 (en) * | 2006-03-13 | 2010-07-01 | Tohoku University | Gallium nitride-based material and method of manufacturing the same |
US20100140536A1 (en) * | 2006-03-13 | 2010-06-10 | Tohoku University | Gallium nitride-based material |
US9034103B2 (en) | 2006-03-30 | 2015-05-19 | Crystal Is, Inc. | Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them |
US9447519B2 (en) | 2006-03-30 | 2016-09-20 | Crystal Is, Inc. | Aluminum nitride bulk crystals having high transparency to untraviolet light and methods of forming them |
US20110008621A1 (en) * | 2006-03-30 | 2011-01-13 | Schujman Sandra B | Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them |
US20090194784A1 (en) * | 2007-01-16 | 2009-08-06 | Showa Denko K.K. | Group-iii nitride compound semiconductor device and production method thereof, group-iii nitride compound semiconductor light-emitting device and production method thereof, and lamp |
US8834630B2 (en) | 2007-01-17 | 2014-09-16 | Crystal Is, Inc. | Defect reduction in seeded aluminum nitride crystal growth |
US9771666B2 (en) | 2007-01-17 | 2017-09-26 | Crystal Is, Inc. | Defect reduction in seeded aluminum nitride crystal growth |
US20080182092A1 (en) * | 2007-01-17 | 2008-07-31 | Crystal Is, Inc. | Defect reduction in seeded aluminum nitride crystal growth |
US8323406B2 (en) | 2007-01-17 | 2012-12-04 | Crystal Is, Inc. | Defect reduction in seeded aluminum nitride crystal growth |
US9624601B2 (en) | 2007-01-17 | 2017-04-18 | Crystal Is, Inc. | Defect reduction in seeded aluminum nitride crystal growth |
US9670591B2 (en) | 2007-01-17 | 2017-06-06 | Crystal Is, Inc. | Defect reduction in seeded aluminum nitride crystal growth |
US8080833B2 (en) | 2007-01-26 | 2011-12-20 | Crystal Is, Inc. | Thick pseudomorphic nitride epitaxial layers |
US20080187016A1 (en) * | 2007-01-26 | 2008-08-07 | Schowalter Leo J | Thick Pseudomorphic Nitride Epitaxial Layers |
US9437430B2 (en) | 2007-01-26 | 2016-09-06 | Crystal Is, Inc. | Thick pseudomorphic nitride epitaxial layers |
US20100264460A1 (en) * | 2007-01-26 | 2010-10-21 | Grandusky James R | Thick pseudomorphic nitride epitaxial layers |
US10446391B2 (en) | 2007-01-26 | 2019-10-15 | Crystal Is, Inc. | Thick pseudomorphic nitride epitaxial layers |
US20090116169A1 (en) * | 2007-11-01 | 2009-05-07 | Jung-Chih Tsao | Alpha Tantalum Capacitor Plate |
US7969708B2 (en) * | 2007-11-01 | 2011-06-28 | Taiwan Semiconductor Company, Ltd. | Alpha tantalum capacitor plate |
US20090146170A1 (en) * | 2007-11-30 | 2009-06-11 | The Regents Of The University Of California | High light extraction efficiency nitride based light emitting diode by surface roughening |
US8114698B2 (en) * | 2007-11-30 | 2012-02-14 | The Regents Of The University Of California | High light extraction efficiency nitride based light emitting diode by surface roughening |
US9040326B2 (en) | 2007-11-30 | 2015-05-26 | The Regents Of The University Of California | High light extraction efficiency nitride based light emitting diode by surface roughening |
US8835200B2 (en) | 2007-11-30 | 2014-09-16 | The Regents Of The University Of California | High light extraction efficiency nitride based light emitting diode by surface roughening |
US20110127571A1 (en) * | 2008-03-27 | 2011-06-02 | Nitek, Inc. | Mixed source growth apparatus and method of fabricating iii-nitride ultraviolet emitters |
US8222669B2 (en) * | 2008-03-27 | 2012-07-17 | Nitek, Inc. | Mixed source growth apparatus and method of fabricating III-nitride ultraviolet emitters |
US20100314551A1 (en) * | 2009-06-11 | 2010-12-16 | Bettles Timothy J | In-line Fluid Treatment by UV Radiation |
US9580833B2 (en) | 2010-06-30 | 2017-02-28 | Crystal Is, Inc. | Growth of large aluminum nitride single crystals with thermal-gradient control |
US9028612B2 (en) | 2010-06-30 | 2015-05-12 | Crystal Is, Inc. | Growth of large aluminum nitride single crystals with thermal-gradient control |
US8975165B2 (en) | 2011-02-17 | 2015-03-10 | Soitec | III-V semiconductor structures with diminished pit defects and methods for forming the same |
US10074784B2 (en) | 2011-07-19 | 2018-09-11 | Crystal Is, Inc. | Photon extraction from nitride ultraviolet light-emitting devices |
US8962359B2 (en) | 2011-07-19 | 2015-02-24 | Crystal Is, Inc. | Photon extraction from nitride ultraviolet light-emitting devices |
US9299880B2 (en) | 2013-03-15 | 2016-03-29 | Crystal Is, Inc. | Pseudomorphic electronic and optoelectronic devices having planar contacts |
Also Published As
Publication number | Publication date |
---|---|
US8207054B2 (en) | 2012-06-26 |
US20090289330A1 (en) | 2009-11-26 |
US20060270200A1 (en) | 2006-11-30 |
JP4396816B2 (en) | 2010-01-13 |
JP2005119921A (en) | 2005-05-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7674699B2 (en) | III group nitride semiconductor substrate, substrate for group III nitride semiconductor device, and fabrication methods thereof | |
JP3631724B2 (en) | Group III nitride semiconductor substrate and manufacturing method thereof | |
JP4172657B2 (en) | GaN single crystal growth method, GaN substrate manufacturing method, GaN element manufacturing method, and GaN element | |
JP4816277B2 (en) | Nitride semiconductor free-standing substrate and nitride semiconductor light emitting device | |
US7632695B2 (en) | Semiconductor device manufacturing method | |
KR101409112B1 (en) | Production of Semiconductor Devices | |
US6756246B2 (en) | Method for fabricating III-V group compound semiconductor | |
JP5638198B2 (en) | Laser diode orientation on miscut substrates | |
US6852161B2 (en) | Method of fabricating group-iii nitride semiconductor crystal, method of fabricating gallium nitride-based compound semiconductor, gallium nitride-based compound semiconductor, gallium nitride-based compound semiconductor light-emitting device, and light source using the semiconductor light-emitting device | |
US7118934B2 (en) | Porous substrate for epitaxial growth, method for manufacturing same, and method for manufacturing III-nitride semiconductor substrate | |
JP2006253628A (en) | Compound semiconductor apparatus and manufacturing method thereof | |
JP2002284600A (en) | Method for manufacturing gallium nitride crystal substrate and the same | |
US7589345B2 (en) | Nitride-based compound semiconductor substrate and method for fabricating the same | |
US8529699B2 (en) | Method of growing zinc-oxide-based semiconductor and method of manufacturing semiconductor light emitting device | |
KR100699739B1 (en) | Iii-v compound semiconductor | |
EP2378545A1 (en) | Iii-nitride semiconductor growth substrate, iii-nitride semiconductor epitaxial substrate, iii-nitride semiconductor element, iii-nitride semiconductor freestanding substrate, and method for fabricating these | |
JP2001308464A (en) | Nitride semiconductor element, method for manufacturing nitride semiconductor crystal, and nitride semiconductor substrate | |
US6844574B1 (en) | III-V compound semiconductor | |
JP2000277440A (en) | Nitride iii-v compound semiconductor crystal film, semiconductor device, and semiconductor laser using the same | |
JPH1160393A (en) | Substrate for crystal growth and light emitting device using the same |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: HITACHI CABLE, LTD.,JAPAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:SHIBATA, MASATOMO;REEL/FRAME:018066/0203 Effective date: 20060605 Owner name: HITACHI CABLE, LTD., JAPAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:SHIBATA, MASATOMO;REEL/FRAME:018066/0203 Effective date: 20060605 |
|
FEPP | Fee payment procedure |
Free format text: PAYOR NUMBER ASSIGNED (ORIGINAL EVENT CODE: ASPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY |
|
FPAY | Fee payment |
Year of fee payment: 4 |
|
AS | Assignment |
Owner name: HITACHI METALS, LTD., JAPAN Free format text: MERGER;ASSIGNOR:HITACHI CABLE, LTD.;REEL/FRAME:032134/0723 Effective date: 20130701 |
|
AS | Assignment |
Owner name: SCIOCS COMPANY LIMITED, JAPAN Free format text: CORPORATE SEPARATION;ASSIGNOR:HITACHI METALS, LTD.;REEL/FRAME:036206/0031 Effective date: 20150608 |
|
AS | Assignment |
Owner name: SUMITOMO CHEMICAL COMPANY, LIMITED, JAPAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:SCIOCS COMPANY LIMITED;REEL/FRAME:037869/0437 Effective date: 20160120 |
|
FEPP | Fee payment procedure |
Free format text: MAINTENANCE FEE REMINDER MAILED (ORIGINAL EVENT CODE: REM.) |
|
LAPS | Lapse for failure to pay maintenance fees |
Free format text: PATENT EXPIRED FOR FAILURE TO PAY MAINTENANCE FEES (ORIGINAL EVENT CODE: EXP.) |
|
STCH | Information on status: patent discontinuation |
Free format text: PATENT EXPIRED DUE TO NONPAYMENT OF MAINTENANCE FEES UNDER 37 CFR 1.362 |
|
FP | Lapsed due to failure to pay maintenance fee |
Effective date: 20180309 |