US7477542B2 - Split gate flash memory cell with ballistic injection - Google Patents
Split gate flash memory cell with ballistic injection Download PDFInfo
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- US7477542B2 US7477542B2 US11/478,256 US47825606A US7477542B2 US 7477542 B2 US7477542 B2 US 7477542B2 US 47825606 A US47825606 A US 47825606A US 7477542 B2 US7477542 B2 US 7477542B2
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- 230000015654 memory Effects 0.000 title claims abstract description 56
- 238000002347 injection Methods 0.000 title description 7
- 239000007924 injection Substances 0.000 title description 7
- 238000007667 floating Methods 0.000 claims abstract description 60
- 239000000758 substrate Substances 0.000 claims abstract description 43
- 238000000034 method Methods 0.000 claims description 34
- 238000005381 potential energy Methods 0.000 claims description 7
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 6
- 238000012544 monitoring process Methods 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 7
- 239000002784 hot electron Substances 0.000 abstract description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 11
- 229920005591 polysilicon Polymers 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 9
- 230000008569 process Effects 0.000 description 8
- 150000004767 nitrides Chemical group 0.000 description 6
- 238000003860 storage Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000008186 active pharmaceutical agent Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000011990 functional testing Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0441—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing multiple floating gate devices, e.g. separate read-and-write FAMOS transistors with connected floating gates
- G11C16/0458—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing multiple floating gate devices, e.g. separate read-and-write FAMOS transistors with connected floating gates comprising two or more independent floating gates which store independent data
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42324—Gate electrodes for transistors with a floating gate
- H01L29/42336—Gate electrodes for transistors with a floating gate with one gate at least partly formed in a trench
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7887—Programmable transistors with more than two possible different levels of programmation
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Abstract
Description
Claims (16)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/478,256 US7477542B2 (en) | 2004-05-18 | 2006-06-29 | Split gate flash memory cell with ballistic injection |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/847,825 US20050259467A1 (en) | 2004-05-18 | 2004-05-18 | Split gate flash memory cell with ballistic injection |
US11/478,256 US7477542B2 (en) | 2004-05-18 | 2006-06-29 | Split gate flash memory cell with ballistic injection |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/847,825 Division US20050259467A1 (en) | 2004-05-18 | 2004-05-18 | Split gate flash memory cell with ballistic injection |
Publications (2)
Publication Number | Publication Date |
---|---|
US20060245256A1 US20060245256A1 (en) | 2006-11-02 |
US7477542B2 true US7477542B2 (en) | 2009-01-13 |
Family
ID=35374975
Family Applications (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/847,825 Abandoned US20050259467A1 (en) | 2004-05-18 | 2004-05-18 | Split gate flash memory cell with ballistic injection |
US11/477,979 Abandoned US20060244038A1 (en) | 2004-05-18 | 2006-06-29 | Split gate flash memory cell with ballistic injection |
US11/478,256 Active 2024-11-28 US7477542B2 (en) | 2004-05-18 | 2006-06-29 | Split gate flash memory cell with ballistic injection |
US12/174,383 Active US7697328B2 (en) | 2004-05-18 | 2008-07-16 | Split gate flash memory cell with ballistic injection |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/847,825 Abandoned US20050259467A1 (en) | 2004-05-18 | 2004-05-18 | Split gate flash memory cell with ballistic injection |
US11/477,979 Abandoned US20060244038A1 (en) | 2004-05-18 | 2006-06-29 | Split gate flash memory cell with ballistic injection |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
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US12/174,383 Active US7697328B2 (en) | 2004-05-18 | 2008-07-16 | Split gate flash memory cell with ballistic injection |
Country Status (1)
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US (4) | US20050259467A1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8048738B1 (en) | 2010-04-14 | 2011-11-01 | Freescale Semiconductor, Inc. | Method for forming a split gate device |
Families Citing this family (13)
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US7163863B2 (en) * | 2004-06-29 | 2007-01-16 | Skymedi Corporation | Vertical memory cell and manufacturing method thereof |
US7646054B2 (en) * | 2006-09-19 | 2010-01-12 | Sandisk Corporation | Array of non-volatile memory cells with floating gates formed of spacers in substrate trenches |
US7696044B2 (en) * | 2006-09-19 | 2010-04-13 | Sandisk Corporation | Method of making an array of non-volatile memory cells with floating gates formed of spacers in substrate trenches |
US7678422B2 (en) * | 2006-12-13 | 2010-03-16 | Air Products And Chemicals, Inc. | Cyclic chemical vapor deposition of metal-silicon containing films |
US7800161B2 (en) * | 2006-12-21 | 2010-09-21 | Sandisk Corporation | Flash NAND memory cell array with charge storage elements positioned in trenches |
US7642160B2 (en) * | 2006-12-21 | 2010-01-05 | Sandisk Corporation | Method of forming a flash NAND memory cell array with charge storage elements positioned in trenches |
US8178406B2 (en) * | 2007-10-29 | 2012-05-15 | Freescale Semiconductor, Inc. | Split gate device and method for forming |
US20090166705A1 (en) * | 2007-12-26 | 2009-07-02 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device and method of manufacturing thereof |
US8014203B2 (en) * | 2009-05-26 | 2011-09-06 | Macronix International Co., Ltd. | Memory device and methods for fabricating and operating the same |
JP6095951B2 (en) * | 2012-11-09 | 2017-03-15 | エスケーハイニックス株式会社SK hynix Inc. | Semiconductor device and manufacturing method thereof |
CN104157655B (en) * | 2014-08-27 | 2020-02-21 | 上海华力微电子有限公司 | SONOS flash memory device and compiling method thereof |
CN108648777B (en) * | 2018-05-10 | 2020-08-11 | 上海华虹宏力半导体制造有限公司 | Programming sequential circuit and method of double-separation gate flash memory |
US11417741B2 (en) | 2020-11-20 | 2022-08-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated chip with a gate structure over a recess |
Citations (29)
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US5021999A (en) * | 1987-12-17 | 1991-06-04 | Mitsubishi Denki Kabushiki Kaisha | Non-volatile semiconductor memory device with facility of storing tri-level data |
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2004
- 2004-05-18 US US10/847,825 patent/US20050259467A1/en not_active Abandoned
-
2006
- 2006-06-29 US US11/477,979 patent/US20060244038A1/en not_active Abandoned
- 2006-06-29 US US11/478,256 patent/US7477542B2/en active Active
-
2008
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8048738B1 (en) | 2010-04-14 | 2011-11-01 | Freescale Semiconductor, Inc. | Method for forming a split gate device |
Also Published As
Publication number | Publication date |
---|---|
US20060244038A1 (en) | 2006-11-02 |
US20080296652A1 (en) | 2008-12-04 |
US20060245256A1 (en) | 2006-11-02 |
US7697328B2 (en) | 2010-04-13 |
US20050259467A1 (en) | 2005-11-24 |
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