US7391048B2 - Optical control portion with graded metal dopant to control refractive index - Google Patents
Optical control portion with graded metal dopant to control refractive index Download PDFInfo
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- US7391048B2 US7391048B2 US10/861,343 US86134304A US7391048B2 US 7391048 B2 US7391048 B2 US 7391048B2 US 86134304 A US86134304 A US 86134304A US 7391048 B2 US7391048 B2 US 7391048B2
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- 230000003287 optical effect Effects 0.000 title claims description 124
- 229910052751 metal Inorganic materials 0.000 title claims description 10
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 43
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- 239000012044 organic layer Substances 0.000 description 19
- 238000004544 sputter deposition Methods 0.000 description 19
- 229910052681 coesite Inorganic materials 0.000 description 16
- 229910052906 cristobalite Inorganic materials 0.000 description 16
- 239000000377 silicon dioxide Substances 0.000 description 16
- 229910052682 stishovite Inorganic materials 0.000 description 16
- 239000000126 substance Substances 0.000 description 16
- 229910052905 tridymite Inorganic materials 0.000 description 16
- 230000015572 biosynthetic process Effects 0.000 description 14
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- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
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- 238000001704 evaporation Methods 0.000 description 4
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- 239000000203 mixture Substances 0.000 description 4
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Chemical compound O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
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- 238000003980 solgel method Methods 0.000 description 3
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- LULLMAFPCBMEBX-UHFFFAOYSA-N 2-[2-[1-amino-2-(1,4-dimethylcyclohexa-2,4-dien-1-yl)ethenyl]-6-methylpyran-4-ylidene]propanedinitrile Chemical compound C(#N)C(=C1C=C(OC(=C1)C(=CC1(CC=C(C=C1)C)C)N)C)C#N LULLMAFPCBMEBX-UHFFFAOYSA-N 0.000 description 2
- OGGKVJMNFFSDEV-UHFFFAOYSA-N 3-methyl-n-[4-[4-(n-(3-methylphenyl)anilino)phenyl]phenyl]-n-phenylaniline Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C=CC(=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 OGGKVJMNFFSDEV-UHFFFAOYSA-N 0.000 description 2
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- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
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- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 2
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 2
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- 239000001989 lithium alloy Substances 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- SJCKRGFTWFGHGZ-UHFFFAOYSA-N magnesium silver Chemical compound [Mg].[Ag] SJCKRGFTWFGHGZ-UHFFFAOYSA-N 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
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- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
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- 239000010409 thin film Substances 0.000 description 2
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 2
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- FQJQNLKWTRGIEB-UHFFFAOYSA-N 2-(4-tert-butylphenyl)-5-[3-[5-(4-tert-butylphenyl)-1,3,4-oxadiazol-2-yl]phenyl]-1,3,4-oxadiazole Chemical compound C1=CC(C(C)(C)C)=CC=C1C1=NN=C(C=2C=C(C=CC=2)C=2OC(=NN=2)C=2C=CC(=CC=2)C(C)(C)C)O1 FQJQNLKWTRGIEB-UHFFFAOYSA-N 0.000 description 1
- OWEOYUSGIQAOBA-UHFFFAOYSA-N 3-(2-methylphenyl)-n-[4-[4-[3-(2-methylphenyl)anilino]phenyl]phenyl]aniline Chemical group CC1=CC=CC=C1C1=CC=CC(NC=2C=CC(=CC=2)C=2C=CC(NC=3C=C(C=CC=3)C=3C(=CC=CC=3)C)=CC=2)=C1 OWEOYUSGIQAOBA-UHFFFAOYSA-N 0.000 description 1
- CMSGUKVDXXTJDQ-UHFFFAOYSA-N 4-(2-naphthalen-1-ylethylamino)-4-oxobutanoic acid Chemical compound C1=CC=C2C(CCNC(=O)CCC(=O)O)=CC=CC2=C1 CMSGUKVDXXTJDQ-UHFFFAOYSA-N 0.000 description 1
- CFNMUZCFSDMZPQ-GHXNOFRVSA-N 7-[(z)-3-methyl-4-(4-methyl-5-oxo-2h-furan-2-yl)but-2-enoxy]chromen-2-one Chemical compound C=1C=C2C=CC(=O)OC2=CC=1OC/C=C(/C)CC1OC(=O)C(C)=C1 CFNMUZCFSDMZPQ-GHXNOFRVSA-N 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910001148 Al-Li alloy Inorganic materials 0.000 description 1
- JRLALOMYZVOMRI-UHFFFAOYSA-N BPPC Chemical compound BPPC JRLALOMYZVOMRI-UHFFFAOYSA-N 0.000 description 1
- 241000284156 Clerodendrum quadriloculare Species 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000846 In alloy Inorganic materials 0.000 description 1
- 229910000733 Li alloy Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 1
- NRCMAYZCPIVABH-UHFFFAOYSA-N Quinacridone Chemical class N1C2=CC=CC=C2C(=O)C2=C1C=C1C(=O)C3=CC=CC=C3NC1=C2 NRCMAYZCPIVABH-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- JFBZPFYRPYOZCQ-UHFFFAOYSA-N [Li].[Al] Chemical compound [Li].[Al] JFBZPFYRPYOZCQ-UHFFFAOYSA-N 0.000 description 1
- JHYLKGDXMUDNEO-UHFFFAOYSA-N [Mg].[In] Chemical compound [Mg].[In] JHYLKGDXMUDNEO-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- SNAAJJQQZSMGQD-UHFFFAOYSA-N aluminum magnesium Chemical compound [Mg].[Al] SNAAJJQQZSMGQD-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 150000004696 coordination complex Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- DCZNSJVFOQPSRV-UHFFFAOYSA-N n,n-diphenyl-4-[4-(n-phenylanilino)phenyl]aniline Chemical compound C1=CC=CC=C1N(C=1C=CC(=CC=1)C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C1=CC=CC=C1 DCZNSJVFOQPSRV-UHFFFAOYSA-N 0.000 description 1
- 239000007773 negative electrode material Substances 0.000 description 1
- 239000005304 optical glass Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 150000004866 oxadiazoles Chemical class 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000007774 positive electrode material Substances 0.000 description 1
- LISFMEBWQUVKPJ-UHFFFAOYSA-N quinolin-2-ol Chemical compound C1=CC=C2NC(=O)C=CC2=C1 LISFMEBWQUVKPJ-UHFFFAOYSA-N 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical compound C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 150000003852 triazoles Chemical class 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
- Led Devices (AREA)
Abstract
Description
n1≧n2; n3≧n2 and n1≧n3
TABLE 1 | |||||||
Example | Example | Example | Example | Example | Example | ||
1 | 2 | 3 | 4 | 5 | 6 | ||
Refractive index of first | 2.30 | 2.30 | 2.40 | 2.01 | 2.40 | 2.01 |
layer | ||||||
Thickness of first layer | 600 | 700 | 670 | 800 | 670 | 800 |
(nm) | ||||||
Refractive index of | 1.70 | 1.50 | 1.43 | 1.42 | 1.43 | 1.42 |
second layer | ||||||
Thickness of second | 600 | 826 | 1000 | 530 | 1000 | 720 |
layer (nm) | ||||||
Refractive index of | 1.78 | 1.78 | 1.78 | 1.78 | 1.78 | 1.78 |
electrode layer | ||||||
Thickness of |
100 | 100 | 100 | 100 | 100 | 100 |
layer (nm) | ||||||
Wavelength of emitted | 530 | 530 | 530 | 530 | 530 | 530 |
light (nm) | ||||||
Efficiency of current | 5.1 | 4.5 | 4.5 | 4.4 | 3.2 | 4.2 |
(cd/A) | ||||||
Refractive index of | 1.457 | 1.457 | 1.457 | 1.457 | 1.950 | 1.457 |
substrate | ||||||
n1d1/λ | 2.6 | 3.0 | 3.0 | 3.0 | 3.0 | 3.0 |
n2d2/λ | 1.9 | 2.3 | 2.7 | 1.4 | 2.7 | 1.9 |
n1/n(sub) | 1.58 | 1.58 | 1.65 | 1.38 | 1.23 | 1.38 |
n1/n2 | 1.35 | 1.53 | 1.68 | 1.42 | 1.68 | 1.42 |
n2/n3 | 0.96 | 0.84 | 0.80 | 0.80 | 0.80 | 0.80 |
TABLE 2 | ||||||
Example | Example | Example | Example | Example | ||
7 | 8 | 9 | 10 | 11 | ||
Refractive index of | 2.40 | 2.40 | 2.40 | 2.30 | 2.30 |
first layer | |||||
Thickness of first | 670 | 670 | 670 | 700 | 700 |
layer (nm) | |||||
Refractive index of | 1.43 | 1.43 | 1.43 | 1.50 | 1.50 |
second layer | |||||
Thickness of second | 900 | 900 | 900 | 826 | 826 |
layer (nm) | |||||
Refractive index of | 1.78 | 1.78 | 1.78 | 1.78 | 1.78 |
electrode layer | |||||
Thickness of |
100 | 100 | 100 | 100 | 100 |
layer (nm) | |||||
Wavelength of | 530 | 530 | 530 | 530 | 530 |
emitted light (nm) | |||||
Efficiency of current | 4.5 | 4.6 | 4.8 | 4.6 | 4.7 |
(cd/A) | |||||
Refractive index of | 1.457 | 1.457 | 1.457 | 1.512 | 1.512 |
substrate | |||||
n1d1/λ | 3.0 | 3.0 | 3.0 | 3.0 | 3.0 |
n2d2/λ | 2.4 | 2.4 | 2.4 | 2.3 | 2.3 |
n1/n(sub) | 1.65 | 1.65 | 1.65 | 1.52 | 1.52 |
n1/n2 | 1.68 | 1.68 | 1.68 | 1.53 | 1.53 |
n2/n3 | 0.96 | 0.84 | 0.80 | 0.84 | 0.84 |
Remarks | Coloring | Gradient | Gradient | Anti- | Anti- |
layer | layer | layer | reflection | reflection | |
Anti- | layer | layer | |||
reflection | |||||
layer | |||||
TABLE 3 | ||||
Comparative | Comparative | Comparative | ||
Example 1 | Example 2 | Example 3 | ||
Refractive index of first | 2.30 | 2.30 | 2.30 |
layer | |||
Thickness of first layer | 600 | 600 | 700 |
(nm) | |||
Refractive index of | 1.70 | 1.70 | 1.25 |
second layer | |||
Thickness of second | 20 | 3500 | 826 |
layer (nm) | |||
Refractive index of | 1.78 | 1.78 | 1.78 |
electrode layer | |||
Thickness of |
100 | 100 | 100 |
layer (nm) | |||
Wavelength of emitted | 530 | 530 | 530 |
light (nm) | |||
Efficiency of current | 2.8 | 2.9 | 3.1 |
(cd/A) | |||
Refractive index of | 1.457 | 1.457 | 1.457 |
substrate | |||
n1d1/λ | 2.6 | 2.6 | 3.0 |
n2d2/λ | 0.1 | 11.2 | 1.9 |
n1/n(sub) | 1.457 | 1.457 | 1.457 |
n1/n2 | 1.35 | 1.35 | 1.84 |
n2/n3 | 0.96 | 0.96 | 0.70 |
Claims (20)
n1≧1.3n2
n1d1≧λ/2
n2d2≧λ/2
n1≧1.3n2
n1d1≧λ/2
n2d2≧λ/2
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/123,811 US7638797B2 (en) | 2003-09-10 | 2008-05-20 | Substrate of emitting device and emitting device using the same |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003-319106 | 2003-09-10 | ||
JP2003319106A JP4703108B2 (en) | 2003-09-10 | 2003-09-10 | Light emitting element substrate and light emitting element using the same |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/123,811 Continuation US7638797B2 (en) | 2003-09-10 | 2008-05-20 | Substrate of emitting device and emitting device using the same |
Publications (2)
Publication Number | Publication Date |
---|---|
US20050051791A1 US20050051791A1 (en) | 2005-03-10 |
US7391048B2 true US7391048B2 (en) | 2008-06-24 |
Family
ID=34191265
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/861,343 Active US7391048B2 (en) | 2003-09-10 | 2004-06-07 | Optical control portion with graded metal dopant to control refractive index |
US12/123,811 Active US7638797B2 (en) | 2003-09-10 | 2008-05-20 | Substrate of emitting device and emitting device using the same |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/123,811 Active US7638797B2 (en) | 2003-09-10 | 2008-05-20 | Substrate of emitting device and emitting device using the same |
Country Status (6)
Country | Link |
---|---|
US (2) | US7391048B2 (en) |
EP (1) | EP1517589B1 (en) |
JP (1) | JP4703108B2 (en) |
KR (1) | KR20050026845A (en) |
CN (1) | CN100481533C (en) |
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Citations (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3858965A (en) * | 1972-07-10 | 1975-01-07 | Minolta Camera Kk | Five layer anti-reflection coating |
US3860813A (en) * | 1973-10-31 | 1975-01-14 | Friedrich Herzog | Beamsplitter and vertically illuminated fluorescent microscope using the same |
US4310784A (en) * | 1979-05-07 | 1982-01-12 | Anthon Erik W | Cathode ray tube face plate construction for suppressing the halo and method |
US4672187A (en) * | 1984-10-16 | 1987-06-09 | Mitsubishi Denki Kabushiki Kaisha | Focusing error detecting device in head assembly for optical disc |
US5894366A (en) * | 1995-09-26 | 1999-04-13 | Mcdonnell Douglas | Anti-reflective coating |
US5932895A (en) * | 1997-05-20 | 1999-08-03 | The Trustees Of Princeton University | Saturated full color stacked organic light emitting devices |
KR19990076085A (en) | 1998-03-27 | 1999-10-15 | 김덕중 | Color-Adjustable Organic Light Emitting Device |
US6117529A (en) * | 1996-12-18 | 2000-09-12 | Gunther Leising | Organic electroluminescence devices and displays |
US6172778B1 (en) * | 1997-01-27 | 2001-01-09 | Yeda Research & Development Co. Ltd. Of Weizmann Institute Of Science | Compact optical crossbar switch |
KR20010051778A (en) | 1999-11-17 | 2001-06-25 | 이즈하라 요조 | Substrate for liquid crystal display elements |
US20010033135A1 (en) * | 2000-03-31 | 2001-10-25 | Duggal Anil Raj | Organic electroluminescent devices with enhanced light extraction |
US20020036958A1 (en) * | 2000-07-24 | 2002-03-28 | Hidenori Wada | Optical element, optical head, optical recording/reproducing apparatus and optical recording/reproducing method |
WO2002037580A1 (en) | 2000-11-02 | 2002-05-10 | 3M Innovative Properties Company | Brightness enhancement of emissive displays |
JP2003031374A (en) | 2001-07-17 | 2003-01-31 | Sony Corp | Organic electroluminescent element |
US20030043571A1 (en) * | 2001-07-30 | 2003-03-06 | Nec Corporation | Light-emitting device and display device employing electroluminescence with no light leakage and improved light extraction efficiency |
US20030062520A1 (en) * | 2001-10-03 | 2003-04-03 | Nec Corporation | Light emitting device and manufacturing method thereof and display used this light emitting device |
US20030124392A1 (en) * | 1998-11-02 | 2003-07-03 | 3M Innovative Properties Company | Transparent conductive articles and methods of making same |
JP2003249364A (en) | 2002-02-22 | 2003-09-05 | Dainippon Printing Co Ltd | Organic electroluminescent image display device and its manufacturing method |
US6618104B1 (en) * | 1998-07-28 | 2003-09-09 | Nippon Telegraph And Telephone Corporation | Optical device having reverse mode holographic PDLC and front light guide |
WO2003084291A1 (en) * | 2002-03-29 | 2003-10-09 | Samsung Sdi Co., Ltd. | Light-emitting device, its manufacturing method, and display using same |
JP2004134158A (en) | 2002-10-09 | 2004-04-30 | Matsushita Electric Works Ltd | Organic electroluminescent element |
US6762553B1 (en) * | 1999-11-10 | 2004-07-13 | Matsushita Electric Works, Ltd. | Substrate for light emitting device, light emitting device and process for production of light emitting device |
US20040160171A1 (en) | 2003-02-12 | 2004-08-19 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and manufacturing method thereof |
US7180235B2 (en) * | 2003-09-10 | 2007-02-20 | Samsung Sdi Co., Ltd. | Light-emitting device substrate with light control layer and light-emitting device using the same |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03222287A (en) * | 1990-01-26 | 1991-10-01 | Olympus Optical Co Ltd | Thin film el element |
WO1996027880A1 (en) | 1995-03-08 | 1996-09-12 | Hitachi, Ltd. | Laminated proximity field optical head and optical information recording and reproducing device |
TW386609U (en) | 1996-10-15 | 2000-04-01 | Koninkl Philips Electronics Nv | Electroluminescent illumination apparatus |
JPH10255978A (en) * | 1997-03-12 | 1998-09-25 | Pioneer Electron Corp | Luminescent display panel |
KR100263758B1 (en) * | 1997-10-13 | 2000-08-16 | 김덕중 | Process for the preparation of organic light-emitting device having microcavity structure using polymer dielectric film and apparatus therefor |
JP3255638B1 (en) * | 2000-06-07 | 2002-02-12 | 日本板硝子株式会社 | Substrate for reflective liquid crystal display |
JP4693253B2 (en) * | 2001-01-30 | 2011-06-01 | 株式会社半導体エネルギー研究所 | Light emitting device, electronic equipment |
KR100863171B1 (en) * | 2001-09-12 | 2008-10-13 | 닛산 가가쿠 고교 가부시키 가이샤 | Organic electroluminescence element-use transparent substrate and element |
JP4182467B2 (en) * | 2001-12-27 | 2008-11-19 | セイコーエプソン株式会社 | Circuit board, electro-optical device and electronic apparatus |
JP2004022182A (en) * | 2002-06-12 | 2004-01-22 | Dainippon Printing Co Ltd | Display device and electronic apparatus |
JP4495978B2 (en) * | 2003-03-07 | 2010-07-07 | 日東電工株式会社 | ORGANIC ELECTROLUMINESCENT ELEMENT AND SURFACE LIGHT SOURCE AND DISPLAY DEVICE USING THIS ELEMENT |
JP4186688B2 (en) * | 2003-04-17 | 2008-11-26 | 三菱化学株式会社 | Electroluminescence element |
JP4543798B2 (en) * | 2003-08-18 | 2010-09-15 | セイコーエプソン株式会社 | Organic EL device and electronic device |
JP4703108B2 (en) * | 2003-09-10 | 2011-06-15 | 三星モバイルディスプレイ株式會社 | Light emitting element substrate and light emitting element using the same |
-
2003
- 2003-09-10 JP JP2003319106A patent/JP4703108B2/en not_active Expired - Lifetime
-
2004
- 2004-05-10 KR KR1020040032796A patent/KR20050026845A/en active Search and Examination
- 2004-06-07 US US10/861,343 patent/US7391048B2/en active Active
- 2004-09-06 AT AT04090344T patent/ATE548888T1/en active
- 2004-09-06 EP EP04090344A patent/EP1517589B1/en active Active
- 2004-09-10 CN CNB2004100770826A patent/CN100481533C/en active Active
-
2008
- 2008-05-20 US US12/123,811 patent/US7638797B2/en active Active
Patent Citations (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3858965A (en) * | 1972-07-10 | 1975-01-07 | Minolta Camera Kk | Five layer anti-reflection coating |
US3860813A (en) * | 1973-10-31 | 1975-01-14 | Friedrich Herzog | Beamsplitter and vertically illuminated fluorescent microscope using the same |
US4310784A (en) * | 1979-05-07 | 1982-01-12 | Anthon Erik W | Cathode ray tube face plate construction for suppressing the halo and method |
US4672187A (en) * | 1984-10-16 | 1987-06-09 | Mitsubishi Denki Kabushiki Kaisha | Focusing error detecting device in head assembly for optical disc |
US5894366A (en) * | 1995-09-26 | 1999-04-13 | Mcdonnell Douglas | Anti-reflective coating |
US6117529A (en) * | 1996-12-18 | 2000-09-12 | Gunther Leising | Organic electroluminescence devices and displays |
US6172778B1 (en) * | 1997-01-27 | 2001-01-09 | Yeda Research & Development Co. Ltd. Of Weizmann Institute Of Science | Compact optical crossbar switch |
US5932895A (en) * | 1997-05-20 | 1999-08-03 | The Trustees Of Princeton University | Saturated full color stacked organic light emitting devices |
KR19990076085A (en) | 1998-03-27 | 1999-10-15 | 김덕중 | Color-Adjustable Organic Light Emitting Device |
US6618104B1 (en) * | 1998-07-28 | 2003-09-09 | Nippon Telegraph And Telephone Corporation | Optical device having reverse mode holographic PDLC and front light guide |
US20030124392A1 (en) * | 1998-11-02 | 2003-07-03 | 3M Innovative Properties Company | Transparent conductive articles and methods of making same |
US6762553B1 (en) * | 1999-11-10 | 2004-07-13 | Matsushita Electric Works, Ltd. | Substrate for light emitting device, light emitting device and process for production of light emitting device |
KR20010051778A (en) | 1999-11-17 | 2001-06-25 | 이즈하라 요조 | Substrate for liquid crystal display elements |
US20010033135A1 (en) * | 2000-03-31 | 2001-10-25 | Duggal Anil Raj | Organic electroluminescent devices with enhanced light extraction |
US20020036958A1 (en) * | 2000-07-24 | 2002-03-28 | Hidenori Wada | Optical element, optical head, optical recording/reproducing apparatus and optical recording/reproducing method |
WO2002037580A1 (en) | 2000-11-02 | 2002-05-10 | 3M Innovative Properties Company | Brightness enhancement of emissive displays |
JP2003031374A (en) | 2001-07-17 | 2003-01-31 | Sony Corp | Organic electroluminescent element |
US20030043571A1 (en) * | 2001-07-30 | 2003-03-06 | Nec Corporation | Light-emitting device and display device employing electroluminescence with no light leakage and improved light extraction efficiency |
US20030062520A1 (en) * | 2001-10-03 | 2003-04-03 | Nec Corporation | Light emitting device and manufacturing method thereof and display used this light emitting device |
JP2003249364A (en) | 2002-02-22 | 2003-09-05 | Dainippon Printing Co Ltd | Organic electroluminescent image display device and its manufacturing method |
WO2003084291A1 (en) * | 2002-03-29 | 2003-10-09 | Samsung Sdi Co., Ltd. | Light-emitting device, its manufacturing method, and display using same |
US20050127832A1 (en) * | 2002-03-29 | 2005-06-16 | Satoru Toguchi | Light-emitting device, its manufacturing method, and display using same |
JP2004134158A (en) | 2002-10-09 | 2004-04-30 | Matsushita Electric Works Ltd | Organic electroluminescent element |
US20040160171A1 (en) | 2003-02-12 | 2004-08-19 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and manufacturing method thereof |
US7180235B2 (en) * | 2003-09-10 | 2007-02-20 | Samsung Sdi Co., Ltd. | Light-emitting device substrate with light control layer and light-emitting device using the same |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080265245A1 (en) * | 2003-09-10 | 2008-10-30 | Samsung Sdi Co., Ltd. | Substrate of emitting device and emitting device using the same |
US7638797B2 (en) * | 2003-09-10 | 2009-12-29 | Samsung Mobile Display Co., Ltd. | Substrate of emitting device and emitting device using the same |
US20110114160A1 (en) * | 2008-04-24 | 2011-05-19 | Nitto Denko Corporation | Transparent substrate |
US20110101382A1 (en) * | 2008-06-26 | 2011-05-05 | Smith Terry L | Light converting construction |
US8461608B2 (en) | 2008-06-26 | 2013-06-11 | 3M Innovative Properties Company | Light converting construction |
US10221090B2 (en) | 2009-10-23 | 2019-03-05 | Nitto Denko Corporation | Transparent substrate |
TWI455356B (en) * | 2010-06-04 | 2014-10-01 | Epistar Corp | A photoelectrical element having a thermal-electrical structure |
Also Published As
Publication number | Publication date |
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CN100481533C (en) | 2009-04-22 |
US20050051791A1 (en) | 2005-03-10 |
JP4703108B2 (en) | 2011-06-15 |
EP1517589B1 (en) | 2012-03-07 |
KR20050026845A (en) | 2005-03-16 |
JP2005085710A (en) | 2005-03-31 |
US7638797B2 (en) | 2009-12-29 |
EP1517589A1 (en) | 2005-03-23 |
US20080265245A1 (en) | 2008-10-30 |
CN1596041A (en) | 2005-03-16 |
ATE548888T1 (en) | 2012-03-15 |
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