US6837963B2 - Semiconductor device, method of producing a semiconductor device, and semiconductor substrate cleaning apparatus used for the production method - Google Patents

Semiconductor device, method of producing a semiconductor device, and semiconductor substrate cleaning apparatus used for the production method Download PDF

Info

Publication number
US6837963B2
US6837963B2 US09/982,779 US98277901A US6837963B2 US 6837963 B2 US6837963 B2 US 6837963B2 US 98277901 A US98277901 A US 98277901A US 6837963 B2 US6837963 B2 US 6837963B2
Authority
US
United States
Prior art keywords
semiconductor substrate
edge part
ions
semiconductor device
cleaning
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related, expires
Application number
US09/982,779
Other versions
US20020168879A1 (en
Inventor
Hiroshi Tanaka
Naoki Yokoi
Yasuhiro Asaoka
Seiji Muranaka
Toshihiko Nagai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
Panasonic Holdings Corp
Original Assignee
Renesas Technology Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Technology Corp, Matsushita Electric Industrial Co Ltd filed Critical Renesas Technology Corp
Assigned to MITSUBISHI DENKI KABUSHIKI KAISHA, MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. reassignment MITSUBISHI DENKI KABUSHIKI KAISHA ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: ASAOKA, YASUHIRO, MURANAKA, SEIJI, NAGAI, TOSHIHIKO, TANAKA, HIROSHI, YOKOI, NAOKI
Publication of US20020168879A1 publication Critical patent/US20020168879A1/en
Assigned to RENESAS TECHNOLOGY CORP. reassignment RENESAS TECHNOLOGY CORP. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: MITSUBISHI DENKI KABUSHIKI KAISHA
Assigned to RENESAS TECHNOLOGY CORP. reassignment RENESAS TECHNOLOGY CORP. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: MITSUBISHI DENKI KABUSHIKI KAISHA
Application granted granted Critical
Publication of US6837963B2 publication Critical patent/US6837963B2/en
Assigned to RENESAS ELECTRONICS CORPORATION reassignment RENESAS ELECTRONICS CORPORATION CHANGE OF NAME (SEE DOCUMENT FOR DETAILS). Assignors: RENESAS TECHNOLOGY CORP.
Adjusted expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/335—Cleaning

Definitions

  • the present invention relates to a semiconductor device, a method of producing a semiconductor device, and a semiconductor substrate cleaning apparatus used for the production method. More particularly, the present invention relates to a semiconductor device production method including a step of cleaning an edge part of a semiconductor substrate and a semiconductor substrate cleaning apparatus used for the production method.
  • a plurality of films are formed on a semiconductor substrate.
  • the semiconductor substrate is moved to another film forming apparatus with an edge part of the semiconductor substrate held by a predetermined apparatus in order to form another film on the semiconductor substrate. If the film of aluminum adheres to the edge part of the semiconductor substrate, the film of aluminum adheres to the apparatus that holds the semiconductor substrate. Since this apparatus holds other semiconductor substrates, the apparatus may in some cases hold a semiconductor substrate on which a film of aluminum is not formed. In such a case, aluminum adheres as an impurity onto the semiconductor substrate on which a film of aluminum is not formed, thereby contaminating the semiconductor substrate. Because of this, impurity contamination spreads over the production line for producing semiconductor devices.
  • a step of cleaning the edge part of the semiconductor substrate is carried out after a film is formed on the semiconductor substrate.
  • FIG. 6 is a cross-sectional view illustrating a conventional semiconductor substrate cleaning apparatus.
  • the cleaning apparatus includes a buffer plate 101 , a guide pin 102 mounted on buffer plate 101 , a supporting shaft 12 that supports buffer plate 101 , and a motor 13 connected to a rotation shaft.
  • a plurality of guide pins 102 are provided on buffer plate 101 , and a semiconductor substrate 1 is held by guide pins 102 .
  • An electrically conductive film, a dielectric film, and others are formed on a surface of semiconductor substrate 1 that opposes buffer plate 101 .
  • a predetermined gap is provided between semiconductor substrate 1 and buffer plate 101 so that buffer plate 101 may not be brought into contact with the electrically conductive film, dielectric film, and others.
  • Buffer plate 101 is connected to supporting shaft 12 . Since supporting shaft 12 is connected to motor 13 , supporting shaft 12 and buffer plate 101 can be rotated by motor 13 .
  • a sealing gas is supplied from supporting shaft 12 in the direction shown by an arrow 110 . The sealing gas flows through a gap between buffer plate 101 and semiconductor substrate 1 in directions shown by arrows 111 and 112 .
  • a chemical liquid is jetted from a chemical liquid ejecting nozzle 105 onto a rear surface of semiconductor substrate 1 , that is, a surface opposite to the surface where the electrically conductive film, oxide film, nitride film, and others are to be formed, in a direction shown by an arrow 106 .
  • semiconductor substrate 1 rotates in a predetermined direction.
  • the chemical liquid is accumulated on semiconductor substrate 1 as shown by a dotted line 107 , and this chemical liquid flows towards edge part 1 e of semiconductor substrate 1 .
  • the sealing gas flows, in directions shown by arrows 111 and 112 , along the surface on the side opposite to the surface where the chemical liquid is jetted.
  • the distance from edge part 1 e of semiconductor substrate 1 to equilibrium point 1 b is substantially determined by the balance between the rounding of chemical liquid and the flow rate of sealing gas, the rotation number of semiconductor substrate 1 , and the shape of buffer plate 101 .
  • the cleaning process can be performed on the adhering films, products, and foreign substances that can be easily dissolved and removed by chemical reaction with the chemical liquid.
  • an underlayer liable to be dissolved in chemical liquid is present on the semiconductor substrate and the adhering film to be removed is present on the underlayer, one cannot use a chemical liquid having a high dissolving power, because the underlayer film is liable to be dissolved in the chemical liquid.
  • edge part 1 e must be cleaned with a chemical liquid having a low dissolving power. In such a case, it is difficult to remove the adhering films, products, and foreign substances that adhere to edge part 1 e.
  • the distance from edge part 1 e to the equilibrium point 1 b is greatly affected by the wetting power of the chemical liquid at edge part 1 e (bevel part) of semiconductor substrate 1 and the permeating power of the chemical liquid as well.
  • the cleaning process conditions such as the rotation speed of semiconductor substrate 1 , the flow rate of supplying the chemical liquid, and the flow rate of supplying the sealing gas are individually set in accordance with the adhering films, products, and foreign substances to be dissolved with the chemical liquid.
  • the permeating power of the chemical liquid on the film is strong, it often happens that the area where semiconductor chips are to be produced cannot be maintained, because the chemical liquid permeates into the film.
  • Japanese Patent Laying-Open No. 10-189515 discloses a method of removing foreign substances on the peripheries of a substrate without affecting the central area of the substrate.
  • a plasma to be generated on the peripheries of the substrate and a gas activated by the plasma is sprayed onto the peripheral region from the rear surface side of the substrate to remove the unnecessary substances on the substrate peripheries.
  • the cleaning power on the peripheries may not be satisfactory.
  • Japanese Patent Laying-Open No. 5-211140 discloses a method of removing materials from the peripheries of a substrate. By this method, the peripheral part of the substrate is exposed to an etching atmosphere to smoothen the peripheral part. However, even by this method, there is a problem in that the substrate peripheries cannot be satisfactorily cleaned.
  • Japanese Patent Laying-Open No. 6-210454 discloses a method of performing a beveling process on a cut-retardant material.
  • a method of performing a beveling process on a cut-retardant material at the time of performing a beveling process on a perimetric edge part of a disk-shaped wafer while rotating the wafer, an aqueous electrolyte solution is supplied to the perimetric part of the wafer and a high-temperature plasma jet is jetted onto the perimetric part to which the aqueous electrolyte solution is supplied.
  • a high-temperature plasma jet is jetted onto the perimetric part to which the aqueous electrolyte solution is supplied.
  • the electrolytic solution permeates into the inside of the wafer.
  • the present invention has been made in order to solve the aforementioned problems of the prior art, and an object thereof is to provide a method of producing a semiconductor device by which the films, products, and foreign substances adhering to the edge part of the semiconductor substrate can be removed effectively and with certainty, as well as an apparatus for cleaning a semiconductor substrate used in the production method.
  • Another object of the present invention is to provide a method of producing a semiconductor device by which only the edge part of the semiconductor substrate is cleaned without affecting the area where the semiconductor chips are to be formed, that is, the central part of the semiconductor substrate, as well as an apparatus for cleaning a semiconductor substrate used in the production method.
  • a method of producing a semiconductor device includes a step of generating ions and a step of accelerating the ions by means of an electric field and radiating an ion flow onto an edge part of a semiconductor substrate to clean the edge part of the semiconductor substrate.
  • the edge part of a semiconductor substrate is cleaned by accelerating ions by means of an electric field and radiating an ion flow onto the edge part. Therefore, as compared with the case of simply exposing the edge part to an ion atmosphere, there will be an increased number of ions that impinge onto the edge part per unit period of time. Furthermore, there will be an increased amount of energy in the ions that impinge onto the edge part of the semiconductor substrate. As a result of this, the edge part of the semiconductor substrate can be cleaned with certainty.
  • the term “ions” refers not only to single ions but also to cluster ions.
  • the method of producing a semiconductor device further includes a step of moving the semiconductor substrate relative to the ion flow while maintaining a state in which the ion flow is being radiated onto the edge part.
  • the ion flow can be radiated onto all of the edge part of the semiconductor substrate, so that the whole of the edge part of the semiconductor substrate can be cleaned.
  • the step of generating ions includes applying a high-frequency voltage between a pair of electrodes to generate the ions between the electrodes.
  • the step of radiating the ion flow onto the edge part includes accelerating the ions by means of an electric field generated between a pair of electrodes.
  • the step of radiating the ion flow onto the edge part includes converging the ion flow by means of a coil to radiate.
  • the ion flow since the ion flow is converged by the coil, the ion flow will be less likely to be radiated onto the parts other than the edge part. As a result, the ion flow is prevented from radiating the central part of the semiconductor substrate.
  • the step of generating ions includes generating at least one kind selected from argon ions and helium ions.
  • these ions become inactive when they lose ion energy by impingement, so that the ions do not penetrate into the semiconductor substrate. As a result, the central part of the semiconductor substrate will not be adversely affected.
  • a method of producing a semiconductor device includes a step of preparing a cleaning fluid containing a fluid that is inactive to a semiconductor substrate and a substance that is inactive to the semiconductor substrate, and a step of jetting the cleaning fluid onto an edge part of the semiconductor substrate to clean the edge part of the semiconductor substrate.
  • the cleaning fluid contains a fluid that is inactive to the semiconductor substrate and a substance that is inactive to the semiconductor substrate. Therefore, the cleaning fluid itself is inactive to the semiconductor substrate. Since this cleaning fluid is jetted onto the edge part to clean the edge part, there will be no reaction between the edge part and the semiconductor substrate. As a result, the edge part can be cleaned without affecting the parts other than the edge part.
  • the method of producing a semiconductor device further includes a step of moving the semiconductor substrate relative to the cleaning fluid while maintaining a state in which the cleaning fluid is being jetted onto the edge part. In this case, since the semiconductor substrate is moved, all of the edge part of the semiconductor substrate can be cleaned.
  • the fluid that is inactive to the semiconductor substrate includes a gas
  • the substance that is inactive to the semiconductor substrate includes liquid drops or solid particles.
  • nitrogen, dried air, or water vapor (water molecules) can be used as the gas.
  • Water or organic solvents (glycol etc.) can be used as the liquid drops.
  • Silica (SiO 2 ) or ceria (CeO 2 ) can be used as the solid particles.
  • the fluid that is inactive to the semiconductor substrate includes a liquid
  • the substance that is inactive to the semiconductor substrate includes solid particles.
  • purified water, isopropyl alcohol (IPA), ethylene glycol, or the like can be used as the liquid.
  • Silica or ceria can be used as the solid particles.
  • a method of producing a semiconductor device includes a step of preparing a cleaning liquid containing a liquid that is inactive to a semiconductor substrate and solid particles that are inactive to the semiconductor substrate, and a step of moving the semiconductor substrate relative to the cleaning liquid while maintaining a state in which the cleaning liquid is being in contact with an edge part of the semiconductor substrate.
  • the cleaning liquid contains a liquid that is inactive to the semiconductor substrate and solid particles that are inactive to the semiconductor substrate. Therefore, the cleaning liquid itself is inactive to the semiconductor substrate. Since the semiconductor substrate is moved while this cleaning liquid is being in contact with the edge part of the semiconductor substrate, the cleaning liquid will not penetrate into the semiconductor substrate. As a result, the edge part of the semiconductor substrate can be cleaned with certainty without affecting the parts other than the edge part of the semiconductor substrate.
  • ethylene glycol can be used as the liquid
  • silica or ceria can be used as the solid particles.
  • An apparatus for cleaning a semiconductor substrate includes ion generating means for generating ions, and cleaning means for accelerating the ions by means of an electric field and radiating an ion flow onto an edge part of the semiconductor substrate to clean the edge part of the semiconductor substrate.
  • the cleaning means accelerates ions by means of an electric field and radiates an ion flow onto the edge part to clean the edge part of a semiconductor substrate. Therefore, as compared with the case of simply exposing the edge part to an ion atmosphere, there will be an increased number of ions that impinge onto the edge part per unit period of time. Furthermore, there will be an increased amount of energy in the ions that impinge onto the edge part of the semiconductor substrate. As a result of this, the edge part of the semiconductor substrate can be cleaned with certainty.
  • the apparatus for cleaning a semiconductor substrate further includes moving means for moving the semiconductor substrate relative to the ion flow while maintaining a state in which the ion flow is being radiated onto the edge part of the semiconductor substrate.
  • the ion flow can be radiated onto all of the edge part of the semiconductor substrate, so that the whole of the edge part of the semiconductor substrate can be cleaned.
  • the ion generating means includes a pair of electrodes that are positioned to oppose each other so as to sandwich the edge part of the semiconductor substrate and a high-frequency power source connected to both of the pair of electrodes.
  • the cleaning means includes the pair of electrodes and a direct-current power source connected to both of the pair of electrodes.
  • the high-frequency power source applies a high-frequency voltage between a pair of electrodes to generate ions between the electrodes.
  • the direct-current power source is connected to the pair of electrodes, there will be a voltage difference between the electrodes. The ions can be accelerated by this voltage difference.
  • the ion generating means includes a pair of first electrodes that are positioned to oppose each other and a high-frequency power source that is connected to both of the pair of first electrodes.
  • the cleaning means includes a pair of second electrodes that are positioned to oppose each other so as to sandwich the ions and the edge part of the semiconductor substrate and a direct-current power source that is connected to both of the pair of second electrodes.
  • a high-frequency power source is connected between the pair of first electrodes, ions can be generated between the pair of first electrodes. Moreover, the generated ions are accelerated by the voltage difference applied between the second electrodes.
  • the apparatus for cleaning a semiconductor substrate further includes converging means for converging the ion flow to radiate.
  • converging means for converging the ion flow to radiate.
  • the ion flow since the ion flow is converged by the converging means, the ion flow will be less likely to be radiated onto the parts other than the edge part. As a result, the ion flow is prevented from radiating the central part of the semiconductor substrate.
  • An apparatus for cleaning a semiconductor substrate includes: holding means for holding a cleaning fluid containing a fluid that is inactive to a semiconductor substrate and a substance that is inactive to the semiconductor substrate; and jetting means for jetting the cleaning fluid towards an edge part of the semiconductor substrate.
  • the cleaning fluid contains a fluid that is inactive to the semiconductor substrate and a substance that is inactive to the semiconductor substrate. Therefore, the cleaning fluid itself is inactive to the semiconductor substrate. Since this cleaning fluid is jetted onto the edge part by the jetting means to clean the edge part, there will be no reaction between the edge part and the semiconductor substrate. As a result, the edge part can be cleaned without affecting the parts other than the edge part.
  • the apparatus for cleaning a semiconductor substrate further includes moving means for moving the semiconductor substrate relative to the cleaning fluid while maintaining a state in which the cleaning fluid is being jetted to the edge part of the semiconductor substrate. In this case, since the semiconductor substrate is moved, all of the edge part of the semiconductor substrate can be cleaned.
  • An apparatus for cleaning a semiconductor substrate includes: holding means for holding a cleaning liquid containing a liquid that is inactive to a semiconductor substrate and solid particles that are inactive to the semiconductor substrate; and moving means for moving the semiconductor substrate relative to the cleaning liquid while maintaining a state in which the cleaning liquid is being in contact with an edge part of the semiconductor substrate.
  • the cleaning liquid contains a liquid that is inactive to the semiconductor substrate and solid particles that are inactive to the semiconductor substrate. Therefore, the cleaning liquid itself is inactive to the semiconductor substrate. Since the moving means moves the semiconductor substrate while maintaining a state in which this cleaning liquid is being in contact with the edge part of the semiconductor substrate, the cleaning liquid will not penetrate into the semiconductor substrate. As a result, the edge part of the semiconductor substrate can be cleaned with certainty without affecting the parts other than the edge part of the semiconductor substrate.
  • the semiconductor device according to the present invention is produced in accordance with any of the above-mentioned semiconductor device production methods.
  • FIG. 1 is a model view illustrating a semiconductor substrate cleaning apparatus according to a first embodiment of the present invention
  • FIG. 2 is a model view illustrating a semiconductor substrate cleaning apparatus according to a second embodiment of the present invention
  • FIG. 3 is a model view illustrating a semiconductor substrate cleaning apparatus according to a third embodiment of the present invention, partially including a cross-sectional view;
  • FIG. 4 is a model view illustrating a semiconductor substrate cleaning apparatus according to a fourth embodiment of the present invention, partially including a cross-sectional view;
  • FIG. 5 is a view as seen in the direction shown by an arrow V in FIG. 4 ;
  • FIG. 6 is a cross-sectional view illustrating a conventional semiconductor substrate cleaning apparatus.
  • a semiconductor substrate cleaning apparatus includes an upper discharging electrode 4 a and a lower discharging electrode 4 b constituting a pair of electrodes that oppose each other, a high-frequency power source 5 a that is electrically connected to both of upper discharging electrode 4 a and lower discharging electrode 4 b , and a bias power source 5 b constituting a direct-current power source that is electrically connected to both of upper discharging electrode 4 a and lower discharging electrode 4 b.
  • Upper discharging electrode 4 a , lower discharging electrode 4 b , and high-frequency power source 5 a constitute ion generating means, and upper discharging electrode 4 a , lower discharging electrode 4 b , and bias power source 5 b constitute cleaning means.
  • Moving means 10 includes a vacuum chuck 11 , a supporting shaft 12 connected to vacuum chuck 11 , and a motor 13 that rotates supporting shaft 12 .
  • Vacuum chuck 11 is connected to motor 13 via supporting shaft 12 , and is rotatable in the direction shown by an arrow R.
  • a high-frequency voltage is applied to upper discharging electrode 4 a and lower discharging electrode 4 b .
  • a predetermined gas such as argon or helium is supplied to a gap between upper discharging electrode 4 a and lower discharging electrode 4 b .
  • the gas becomes a plasma to generate ions.
  • the plasma is generated in the region surrounded by a dotted line 6 .
  • the ions are present in that region.
  • the plasma to be used can be an RF (radio frequency) plasma having a frequency of 13.56 MHz. If this plasma is used, plasma discharge can be provided at a low pressure of from 100 Pa to 1000 Pa, and the mean free path of the ions can be increased.
  • bias power source 5 b is preferably from 10V to 1000V, though the voltage depends on the distance between upper and lower discharging electrodes 4 a and 4 b.
  • a gas constituting an ion source is introduced under a low pressure into the whole region sandwiched by upper discharging electrode 4 a and lower discharging electrode 4 b .
  • An RF electric field from high-frequency power source 5 a and a bias electric field from bias power source 5 b are applied to the gap between upper discharging electrode 4 a and lower discharging electrode 4 b , thereby to generate a plasma in the region surrounded by dotted line 6 .
  • the ions or cluster ions generated by the plasma discharge are attracted to the lower discharging electrode 4 b side, as shown by an arrow 2 a , by the bias electric field.
  • the mean free path is longer under a low pressure or according as the electric field density of the RF electric field or the bias electric field is higher, the total energy density of anisotropic radiation of the ions or cluster ions will be higher. For this reason, the films, products, foreign substances, and others adhering to edge part 1 e of semiconductor substrate 1 can be peeled off with more certainty. As a result of this, as compared with the case of removing these by chemical reaction, the foreign substances and others can be removed effectively and with certainty without depending on the material quality of the adhering films, products, and foreign substances.
  • upper discharging electrode 4 a and lower discharging electrode 4 b are nearer to edge part 1 e of semiconductor substrate 1 or according as the tip end part opposing to semiconductor substrate 1 is narrower, it is possible to clean edge part 1 e alone. For this reason, the controllability of the distance from edge part 1 e to the part subjected to the cleaning process can be enhanced.
  • the ions are accelerated and radiated onto edge part 1 e . Therefore, as compared with the case in which the ions are not accelerated, there will be an increased number of ions that impinge onto edge part 1 e per unit period of time, and there will be an increased amount of energy in the impinging ions. As a result of this, the films, products, foreign substances, and others at the edge part can be removed with certainty.
  • the distance from edge part 1 e to the part subjected to the cleaning process can be controlled with certainty.
  • a semiconductor substrate cleaning apparatus includes accelerating electrodes 14 a and 14 b constituting a pair of second electrodes, discharging electrodes 14 c and 14 d constituting a pair of first electrodes, a bias power source 5 b constituting a direct-current power source connected to the pair of accelerating electrodes 14 a and 14 b , a high-frequency power source 5 a connected to the pair of discharging electrodes 14 c and 14 d , and a converging coil 7 constituting converging means disposed between accelerating electrodes 14 a and 14 b.
  • the pair of discharging electrodes 14 c and 14 d and high-frequency power source 5 a constitute ion generating means.
  • the pair of accelerating electrodes 14 a and 14 b opposing to each other to sandwich edge part 1 e , and bias power source 5 b constitute cleaning means.
  • the plasma to be used is preferably an RF plasma having a frequency of 13.56 MHz, or a microwave plasma having a frequency of 1.45 GHz, though the construction in the drawings is different.
  • the microwave plasma allows plasma discharge at an extremely low pressure of from 10 Pa to 100 Pa.
  • the voltage to be applied between accelerating electrodes 14 a and 14 b is preferably from 100 V to 10,000 V, because the distance between the electrodes is longer.
  • Edge part 1 e of semiconductor substrate 1 is positioned between converging coil 7 and accelerating electrode 14 b .
  • Semiconductor substrate 1 is held by moving means 10 in the same manner as in the first embodiment.
  • Vacuum chuck 11 is connected to motor 13 by supporting shaft 12 , and vacuum chuck 11 can be rotated in the direction shown by arrow R.
  • the plasma is generated by applying an RF electric field from high-frequency power source 5 a to a gap between discharging electrodes 14 c and 14 d while introducing a gas constituting an ion source under a low pressure to the whole region sandwiched by discharging electrodes 14 c and 14 d .
  • This allows ions to be generated.
  • bias electric field from bias power source 5 b is applied to a gap between accelerating electrodes 14 a and 14 b , only the ions generated by the plasma discharge are attracted by the bias electric field to accelerating electrode 14 b on the lower side while being converged to a high density by converging coil 7 located in the midway.
  • accelerating electrode 14 b is nearer to edge part 1 e or according as the tip end part of accelerating electrode 14 b is narrower as it approaches edge part 1 e , the controllability of the distance from edge part 1 e to the part subjected to the cleaning process can be enhanced.
  • Such an apparatus also produces effects similar to those produced by the apparatus according to the first embodiment.
  • an exemplary case has been shown in which an RF electric field is applied as the plasma discharging source; however, by applying a microwave electric field that can produce a plasma discharge under a lower pressure, the energy density of anisotropic radiation can be enhanced.
  • a semiconductor substrate cleaning apparatus includes a buffer tank 9 a constituting holding means for holding a cleaning fluid, and a nozzle 8 constituting jetting means connected to buffer tank 9 a for jetting cleaning fluid 3 towards an edge part 1 e of semiconductor substrate 1 .
  • a pressurizing pipe 9 b is connected to buffer tank 9 a , and by feeding a high-pressure gas from pressurizing pipe 9 b into buffer tank 9 a , cleaning fluid 3 in buffer tank 9 a can be pressurized and sent to the nozzle 8 side.
  • Cleaning fluid 3 is constituted with solid particles 3 b and a liquid carrier 3 a (carrier in liquid form).
  • the solid particles 3 b and liquid carrier 3 a in cleaning fluid 3 are limited to those that are inactive to the silicon constituting semiconductor substrate 1 .
  • Silica or ceria can be used as solid particles 3 b .
  • Purified water or isopropyl alcohol can be used as liquid carrier 3 a .
  • Vacuum chuck 11 is connected to a motor 13 via a supporting shaft 12 and rotates in the direction shown by an arrow R.
  • cleaning fluid 3 is forced out at a high pressure from nozzle 8 and proceeds in the direction shown by a dotted line 31 by introduction of a high-pressure gas from pressurizing pipe 9 b into buffer tank 9 a .
  • This allows the cleaning fluid to be anisotropically radiated onto edge part 1 e of semiconductor substrate 1 .
  • semiconductor substrate 1 can be moved relative to cleaning fluid 3 , whereby the films, products, foreign substances, and others adhering to the whole perimeter of edge part 1 e of semiconductor substrate 1 are removed.
  • the cleaning fluid is jetted onto edge part 1 e , so that the stains on the edge part 1 e can be removed with certainty. Moreover, since the solid particles 3 b and liquid carrier 3 a constituting cleaning fluid 3 are both inactive to the semiconductor substrate, cleaning fluid 3 does not penetrate into semiconductor substrate 1 . As a result, it is possible to clean edge part 1 e alone with certainty without affecting the central part of semiconductor substrate 1 .
  • cleaning fluid 3 containing solid particles 3 b and liquid carrier 3 a has been shown; however, in order to optimize the energy density of anisotropic radiation, a cleaning fluid containing solid particles or liquid drops and a gaseous carrier can be used instead.
  • a cleaning fluid containing solid particles or liquid drops and a gaseous carrier can be used instead.
  • the aforesaid silica or ceria can be used as the solid particles.
  • Water or organic solvents can be used as the liquid drops. Nitrogen, dried air, and water vapor (water molecules) can be used as the gaseous carrier.
  • liquid carrier 3 a is a liquid that is not reactive to solid particles 3 b and has a low viscosity.
  • solid particles 3 b have a high hardness, have a uniform particle size, and do not agglomerate.
  • the combination using silica or ceria as solid particles 3 b and using purified water as liquid carrier 3 a is preferable.
  • a semiconductor substrate cleaning apparatus includes a vessel 9 c constituting holding means for holding a cleaning liquid 23 containing a liquid carrier 23 a that is inactive to a semiconductor substrate 1 and solid particles 23 b that are inactive to semiconductor substrate 1 , and moving means 10 for moving semiconductor substrate 1 relative to cleaning liquid 23 while maintaining a state in which cleaning liquid 23 is being in contact with an edge part 1 e of semiconductor substrate 1 .
  • Moving means 10 includes a vacuum chuck 11 , a supporting shaft 12 connected to vacuum chuck 11 , and a motor 13 connected to supporting shaft 12 .
  • Motor 13 can rotate vacuum chuck 11 and semiconductor substrate 1 in the direction shown by an arrow R in FIG. 5 .
  • Edge part 1 e of semiconductor substrate 1 is immersed in cleaning liquid 23 .
  • liquid carrier 23 a is circulated in the vessel 9 c in accordance with the needs.
  • Cleaning liquid 23 is anisotropically radiated onto edge part 1 e of semiconductor substrate 1 , whereby the films, products, and foreign substances adhering to the whole perimeter of edge part 1 e of semiconductor substrate 1 are removed.
  • liquid carrier 23 a to be used is preferably a liquid having a high viscosity, for example, ethylene glycol.
  • the solid particles to be used can be silica or ceria.
  • a semiconductor substrate cleaning apparatus and a semiconductor substrate producing method such as described above produce effects similar to those of the third embodiment.
  • the rotation shaft of the semiconductor substrate has not been referred to.
  • the rotation shaft need not be parallel to the direction along which the particles are anisotropically radiated, so that it is possible to change the shaft for anisotropic radiation along the shape of edge part 1 e of semiconductor substrate 1 . In this case, it is effective on the side surface of semiconductor substrate 1 .
  • the films, products, and foreign substances adhering to the edge part of the semiconductor substrate can be removed effectively and with certainty, thereby enhancing the capability of preventing the impurity contamination from spreading over the production line.
  • the distance from the edge part of the semiconductor substrate to the part subjected to the cleaning process can be controlled with certainty. For this reason, the present invention produces an effect in that the area where the semiconductor chips are to be disposed can be maintained with certainty.

Abstract

A semiconductor device producing method that can clean an edge part of a semiconductor substrate with certainty is provided. The method of producing a semiconductor device includes a step of generating ions and a step of accelerating the ions by means of an electric field and radiating an ion flow onto an edge part of a semiconductor substrate to clean the edge part of the semiconductor substrate. The semiconductor substrate is moved relative to the ion flow while maintaining a state in which the ion flow is being radiated onto the edge part. The step of generating ions includes applying a high-frequency voltage between a pair of electrodes to generate the ions between the electrodes.

Description

BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to a semiconductor device, a method of producing a semiconductor device, and a semiconductor substrate cleaning apparatus used for the production method. More particularly, the present invention relates to a semiconductor device production method including a step of cleaning an edge part of a semiconductor substrate and a semiconductor substrate cleaning apparatus used for the production method.
2. Description of the Background Art
Typically, in a method of producing a semiconductor device, a plurality of films are formed on a semiconductor substrate. There are cases in which, after a film such as aluminum is formed on a semiconductor substrate, the semiconductor substrate is moved to another film forming apparatus with an edge part of the semiconductor substrate held by a predetermined apparatus in order to form another film on the semiconductor substrate. If the film of aluminum adheres to the edge part of the semiconductor substrate, the film of aluminum adheres to the apparatus that holds the semiconductor substrate. Since this apparatus holds other semiconductor substrates, the apparatus may in some cases hold a semiconductor substrate on which a film of aluminum is not formed. In such a case, aluminum adheres as an impurity onto the semiconductor substrate on which a film of aluminum is not formed, thereby contaminating the semiconductor substrate. Because of this, impurity contamination spreads over the production line for producing semiconductor devices.
In order to prevent this, it is necessary to effectively remove films, products, foreign substances, and others that adhere to the edge part of the semiconductor substrate. Conventionally, in a process for producing a semiconductor device, in order to prevent the aforesaid contamination, a step of cleaning the edge part of the semiconductor substrate is carried out after a film is formed on the semiconductor substrate.
FIG. 6 is a cross-sectional view illustrating a conventional semiconductor substrate cleaning apparatus. In FIG. 6, the cleaning apparatus includes a buffer plate 101, a guide pin 102 mounted on buffer plate 101, a supporting shaft 12 that supports buffer plate 101, and a motor 13 connected to a rotation shaft.
A plurality of guide pins 102 are provided on buffer plate 101, and a semiconductor substrate 1 is held by guide pins 102. An electrically conductive film, a dielectric film, and others are formed on a surface of semiconductor substrate 1 that opposes buffer plate 101. A predetermined gap is provided between semiconductor substrate 1 and buffer plate 101 so that buffer plate 101 may not be brought into contact with the electrically conductive film, dielectric film, and others. Buffer plate 101 is connected to supporting shaft 12. Since supporting shaft 12 is connected to motor 13, supporting shaft 12 and buffer plate 101 can be rotated by motor 13. A sealing gas is supplied from supporting shaft 12 in the direction shown by an arrow 110. The sealing gas flows through a gap between buffer plate 101 and semiconductor substrate 1 in directions shown by arrows 111 and 112.
Next, a method of cleaning an edge part 1 e in such a cleaning apparatus will be described.
A chemical liquid is jetted from a chemical liquid ejecting nozzle 105 onto a rear surface of semiconductor substrate 1, that is, a surface opposite to the surface where the electrically conductive film, oxide film, nitride film, and others are to be formed, in a direction shown by an arrow 106. During this period, semiconductor substrate 1 rotates in a predetermined direction. The chemical liquid is accumulated on semiconductor substrate 1 as shown by a dotted line 107, and this chemical liquid flows towards edge part 1 e of semiconductor substrate 1. The sealing gas flows, in directions shown by arrows 111 and 112, along the surface on the side opposite to the surface where the chemical liquid is jetted. Because of this, the portion up to an equilibrium point 1 b where the flow of chemical liquid meets the flow of sealing gas will be immersed in the chemical liquid. The distance from edge part 1 e of semiconductor substrate 1 to equilibrium point 1 b is substantially determined by the balance between the rounding of chemical liquid and the flow rate of sealing gas, the rotation number of semiconductor substrate 1, and the shape of buffer plate 101.
By a cleaning method such as described above, the cleaning process can be performed on the adhering films, products, and foreign substances that can be easily dissolved and removed by chemical reaction with the chemical liquid. However, if, for example, an underlayer liable to be dissolved in chemical liquid is present on the semiconductor substrate and the adhering film to be removed is present on the underlayer, one cannot use a chemical liquid having a high dissolving power, because the underlayer film is liable to be dissolved in the chemical liquid. For this reason, edge part 1 e must be cleaned with a chemical liquid having a low dissolving power. In such a case, it is difficult to remove the adhering films, products, and foreign substances that adhere to edge part 1 e.
Moreover, the distance from edge part 1 e to the equilibrium point 1 b is greatly affected by the wetting power of the chemical liquid at edge part 1 e (bevel part) of semiconductor substrate 1 and the permeating power of the chemical liquid as well. The cleaning process conditions such as the rotation speed of semiconductor substrate 1, the flow rate of supplying the chemical liquid, and the flow rate of supplying the sealing gas are individually set in accordance with the adhering films, products, and foreign substances to be dissolved with the chemical liquid. However, if the permeating power of the chemical liquid on the film is strong, it often happens that the area where semiconductor chips are to be produced cannot be maintained, because the chemical liquid permeates into the film.
Japanese Patent Laying-Open No. 10-189515 discloses a method of removing foreign substances on the peripheries of a substrate without affecting the central area of the substrate. By this method, one allows a plasma to be generated on the peripheries of the substrate and a gas activated by the plasma is sprayed onto the peripheral region from the rear surface side of the substrate to remove the unnecessary substances on the substrate peripheries. However, by this method, the cleaning power on the peripheries may not be satisfactory.
Further, Japanese Patent Laying-Open No. 5-211140 discloses a method of removing materials from the peripheries of a substrate. By this method, the peripheral part of the substrate is exposed to an etching atmosphere to smoothen the peripheral part. However, even by this method, there is a problem in that the substrate peripheries cannot be satisfactorily cleaned.
Furthermore, Japanese Patent Laying-Open No. 6-210454 discloses a method of performing a beveling process on a cut-retardant material. By this method, at the time of performing a beveling process on a perimetric edge part of a disk-shaped wafer while rotating the wafer, an aqueous electrolyte solution is supplied to the perimetric part of the wafer and a high-temperature plasma jet is jetted onto the perimetric part to which the aqueous electrolyte solution is supplied. However, by this method, there is a problem in that the electrolytic solution permeates into the inside of the wafer.
SUMMARY OF THE INVENTION
Thus, the present invention has been made in order to solve the aforementioned problems of the prior art, and an object thereof is to provide a method of producing a semiconductor device by which the films, products, and foreign substances adhering to the edge part of the semiconductor substrate can be removed effectively and with certainty, as well as an apparatus for cleaning a semiconductor substrate used in the production method.
Another object of the present invention is to provide a method of producing a semiconductor device by which only the edge part of the semiconductor substrate is cleaned without affecting the area where the semiconductor chips are to be formed, that is, the central part of the semiconductor substrate, as well as an apparatus for cleaning a semiconductor substrate used in the production method.
A method of producing a semiconductor device according to one aspect of the present invention includes a step of generating ions and a step of accelerating the ions by means of an electric field and radiating an ion flow onto an edge part of a semiconductor substrate to clean the edge part of the semiconductor substrate.
By a method of producing a semiconductor device including these steps, the edge part of a semiconductor substrate is cleaned by accelerating ions by means of an electric field and radiating an ion flow onto the edge part. Therefore, as compared with the case of simply exposing the edge part to an ion atmosphere, there will be an increased number of ions that impinge onto the edge part per unit period of time. Furthermore, there will be an increased amount of energy in the ions that impinge onto the edge part of the semiconductor substrate. As a result of this, the edge part of the semiconductor substrate can be cleaned with certainty. Here, in this specification, the term “ions” refers not only to single ions but also to cluster ions.
Preferably, the method of producing a semiconductor device further includes a step of moving the semiconductor substrate relative to the ion flow while maintaining a state in which the ion flow is being radiated onto the edge part. In this case, the ion flow can be radiated onto all of the edge part of the semiconductor substrate, so that the whole of the edge part of the semiconductor substrate can be cleaned.
Preferably, the step of generating ions includes applying a high-frequency voltage between a pair of electrodes to generate the ions between the electrodes.
Preferably, the step of radiating the ion flow onto the edge part includes accelerating the ions by means of an electric field generated between a pair of electrodes.
Preferably, the step of radiating the ion flow onto the edge part includes converging the ion flow by means of a coil to radiate. In this case, since the ion flow is converged by the coil, the ion flow will be less likely to be radiated onto the parts other than the edge part. As a result, the ion flow is prevented from radiating the central part of the semiconductor substrate.
Preferably, the step of generating ions includes generating at least one kind selected from argon ions and helium ions. In this case, these ions become inactive when they lose ion energy by impingement, so that the ions do not penetrate into the semiconductor substrate. As a result, the central part of the semiconductor substrate will not be adversely affected.
A method of producing a semiconductor device according to another aspect of the present invention includes a step of preparing a cleaning fluid containing a fluid that is inactive to a semiconductor substrate and a substance that is inactive to the semiconductor substrate, and a step of jetting the cleaning fluid onto an edge part of the semiconductor substrate to clean the edge part of the semiconductor substrate.
By a method of producing a semiconductor device including these steps, the cleaning fluid contains a fluid that is inactive to the semiconductor substrate and a substance that is inactive to the semiconductor substrate. Therefore, the cleaning fluid itself is inactive to the semiconductor substrate. Since this cleaning fluid is jetted onto the edge part to clean the edge part, there will be no reaction between the edge part and the semiconductor substrate. As a result, the edge part can be cleaned without affecting the parts other than the edge part.
Preferably, the method of producing a semiconductor device further includes a step of moving the semiconductor substrate relative to the cleaning fluid while maintaining a state in which the cleaning fluid is being jetted onto the edge part. In this case, since the semiconductor substrate is moved, all of the edge part of the semiconductor substrate can be cleaned.
Preferably, the fluid that is inactive to the semiconductor substrate includes a gas, and the substance that is inactive to the semiconductor substrate includes liquid drops or solid particles. In this case, nitrogen, dried air, or water vapor (water molecules) can be used as the gas. Water or organic solvents (glycol etc.) can be used as the liquid drops. Silica (SiO2) or ceria (CeO2) can be used as the solid particles.
Preferably, the fluid that is inactive to the semiconductor substrate includes a liquid, and the substance that is inactive to the semiconductor substrate includes solid particles. In this case, purified water, isopropyl alcohol (IPA), ethylene glycol, or the like can be used as the liquid. Silica or ceria can be used as the solid particles.
A method of producing a semiconductor device according to still another aspect of the present invention includes a step of preparing a cleaning liquid containing a liquid that is inactive to a semiconductor substrate and solid particles that are inactive to the semiconductor substrate, and a step of moving the semiconductor substrate relative to the cleaning liquid while maintaining a state in which the cleaning liquid is being in contact with an edge part of the semiconductor substrate.
By a method of producing a semiconductor device including these steps, the cleaning liquid contains a liquid that is inactive to the semiconductor substrate and solid particles that are inactive to the semiconductor substrate. Therefore, the cleaning liquid itself is inactive to the semiconductor substrate. Since the semiconductor substrate is moved while this cleaning liquid is being in contact with the edge part of the semiconductor substrate, the cleaning liquid will not penetrate into the semiconductor substrate. As a result, the edge part of the semiconductor substrate can be cleaned with certainty without affecting the parts other than the edge part of the semiconductor substrate.
Here, in this case, ethylene glycol can be used as the liquid, and silica or ceria can be used as the solid particles.
An apparatus for cleaning a semiconductor substrate according to one aspect of the present invention includes ion generating means for generating ions, and cleaning means for accelerating the ions by means of an electric field and radiating an ion flow onto an edge part of the semiconductor substrate to clean the edge part of the semiconductor substrate.
By a semiconductor substrate cleaning apparatus constructed as above, the cleaning means accelerates ions by means of an electric field and radiates an ion flow onto the edge part to clean the edge part of a semiconductor substrate. Therefore, as compared with the case of simply exposing the edge part to an ion atmosphere, there will be an increased number of ions that impinge onto the edge part per unit period of time. Furthermore, there will be an increased amount of energy in the ions that impinge onto the edge part of the semiconductor substrate. As a result of this, the edge part of the semiconductor substrate can be cleaned with certainty.
Preferably, the apparatus for cleaning a semiconductor substrate further includes moving means for moving the semiconductor substrate relative to the ion flow while maintaining a state in which the ion flow is being radiated onto the edge part of the semiconductor substrate. In this case, the ion flow can be radiated onto all of the edge part of the semiconductor substrate, so that the whole of the edge part of the semiconductor substrate can be cleaned.
Preferably, the ion generating means includes a pair of electrodes that are positioned to oppose each other so as to sandwich the edge part of the semiconductor substrate and a high-frequency power source connected to both of the pair of electrodes. The cleaning means includes the pair of electrodes and a direct-current power source connected to both of the pair of electrodes. In this case, the high-frequency power source applies a high-frequency voltage between a pair of electrodes to generate ions between the electrodes. Also, since the direct-current power source is connected to the pair of electrodes, there will be a voltage difference between the electrodes. The ions can be accelerated by this voltage difference.
Preferably, the ion generating means includes a pair of first electrodes that are positioned to oppose each other and a high-frequency power source that is connected to both of the pair of first electrodes. The cleaning means includes a pair of second electrodes that are positioned to oppose each other so as to sandwich the ions and the edge part of the semiconductor substrate and a direct-current power source that is connected to both of the pair of second electrodes. In this case, since a high-frequency power source is connected between the pair of first electrodes, ions can be generated between the pair of first electrodes. Moreover, the generated ions are accelerated by the voltage difference applied between the second electrodes.
Preferably, the apparatus for cleaning a semiconductor substrate further includes converging means for converging the ion flow to radiate. In this case, since the ion flow is converged by the converging means, the ion flow will be less likely to be radiated onto the parts other than the edge part. As a result, the ion flow is prevented from radiating the central part of the semiconductor substrate.
An apparatus for cleaning a semiconductor substrate according to another aspect of the present invention includes: holding means for holding a cleaning fluid containing a fluid that is inactive to a semiconductor substrate and a substance that is inactive to the semiconductor substrate; and jetting means for jetting the cleaning fluid towards an edge part of the semiconductor substrate.
By a semiconductor substrate cleaning apparatus constructed as above, the cleaning fluid contains a fluid that is inactive to the semiconductor substrate and a substance that is inactive to the semiconductor substrate. Therefore, the cleaning fluid itself is inactive to the semiconductor substrate. Since this cleaning fluid is jetted onto the edge part by the jetting means to clean the edge part, there will be no reaction between the edge part and the semiconductor substrate. As a result, the edge part can be cleaned without affecting the parts other than the edge part.
Preferably, the apparatus for cleaning a semiconductor substrate further includes moving means for moving the semiconductor substrate relative to the cleaning fluid while maintaining a state in which the cleaning fluid is being jetted to the edge part of the semiconductor substrate. In this case, since the semiconductor substrate is moved, all of the edge part of the semiconductor substrate can be cleaned.
An apparatus for cleaning a semiconductor substrate according to still another aspect of the present invention includes: holding means for holding a cleaning liquid containing a liquid that is inactive to a semiconductor substrate and solid particles that are inactive to the semiconductor substrate; and moving means for moving the semiconductor substrate relative to the cleaning liquid while maintaining a state in which the cleaning liquid is being in contact with an edge part of the semiconductor substrate.
According to a semiconductor substrate cleaning apparatus constructed as above, the cleaning liquid contains a liquid that is inactive to the semiconductor substrate and solid particles that are inactive to the semiconductor substrate. Therefore, the cleaning liquid itself is inactive to the semiconductor substrate. Since the moving means moves the semiconductor substrate while maintaining a state in which this cleaning liquid is being in contact with the edge part of the semiconductor substrate, the cleaning liquid will not penetrate into the semiconductor substrate. As a result, the edge part of the semiconductor substrate can be cleaned with certainty without affecting the parts other than the edge part of the semiconductor substrate.
The semiconductor device according to the present invention is produced in accordance with any of the above-mentioned semiconductor device production methods.
The foregoing and other objects, features, aspects and advantages of the present invention will become more apparent from the following detailed description of the present invention when taken in conjunction with the accompanying drawings.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is a model view illustrating a semiconductor substrate cleaning apparatus according to a first embodiment of the present invention;
FIG. 2 is a model view illustrating a semiconductor substrate cleaning apparatus according to a second embodiment of the present invention;
FIG. 3 is a model view illustrating a semiconductor substrate cleaning apparatus according to a third embodiment of the present invention, partially including a cross-sectional view;
FIG. 4 is a model view illustrating a semiconductor substrate cleaning apparatus according to a fourth embodiment of the present invention, partially including a cross-sectional view;
FIG. 5 is a view as seen in the direction shown by an arrow V in FIG. 4; and
FIG. 6 is a cross-sectional view illustrating a conventional semiconductor substrate cleaning apparatus.
 DESCRIPTION OF THE PREFERRED EMBODIMENTS
Hereafter, preferred embodiments of the present invention will be described with reference to the attached drawings.
First Embodiment
Referring to FIG. 1, a semiconductor substrate cleaning apparatus according to the first embodiment of the present invention includes an upper discharging electrode 4 a and a lower discharging electrode 4 b constituting a pair of electrodes that oppose each other, a high-frequency power source 5 a that is electrically connected to both of upper discharging electrode 4 a and lower discharging electrode 4 b, and a bias power source 5 b constituting a direct-current power source that is electrically connected to both of upper discharging electrode 4 a and lower discharging electrode 4 b.
Upper discharging electrode 4 a, lower discharging electrode 4 b, and high-frequency power source 5 a constitute ion generating means, and upper discharging electrode 4 a, lower discharging electrode 4 b, and bias power source 5 b constitute cleaning means.
Upper discharging electrode 4 a and lower discharging electrode 4 b are positioned to oppose each other so as to sandwich an edge part (bevel part) 1 e of a semiconductor substrate 1 made of silicon. Semiconductor substrate 1 is held by moving means 10. Moving means 10 includes a vacuum chuck 11, a supporting shaft 12 connected to vacuum chuck 11, and a motor 13 that rotates supporting shaft 12. Vacuum chuck 11 is connected to motor 13 via supporting shaft 12, and is rotatable in the direction shown by an arrow R.
A high-frequency voltage is applied to upper discharging electrode 4 a and lower discharging electrode 4 b. A predetermined gas such as argon or helium is supplied to a gap between upper discharging electrode 4 a and lower discharging electrode 4 b. When the high-frequency voltage is applied to the gas, the gas becomes a plasma to generate ions. The plasma is generated in the region surrounded by a dotted line 6. The ions are present in that region. The plasma to be used can be an RF (radio frequency) plasma having a frequency of 13.56 MHz. If this plasma is used, plasma discharge can be provided at a low pressure of from 100 Pa to 1000 Pa, and the mean free path of the ions can be increased.
Further, the voltage of bias power source 5 b is preferably from 10V to 1000V, though the voltage depends on the distance between upper and lower discharging electrodes 4 a and 4 b.
In such an apparatus, a gas constituting an ion source is introduced under a low pressure into the whole region sandwiched by upper discharging electrode 4 a and lower discharging electrode 4 b. An RF electric field from high-frequency power source 5 a and a bias electric field from bias power source 5 b are applied to the gap between upper discharging electrode 4 a and lower discharging electrode 4 b, thereby to generate a plasma in the region surrounded by dotted line 6. The ions or cluster ions generated by the plasma discharge are attracted to the lower discharging electrode 4 b side, as shown by an arrow 2 a, by the bias electric field. This allows an ion flow to be anisotropically radiated onto edge part 1 e of semiconductor substrate 1. In this state, by rotating vacuum chuck 11 in the direction shown by an arrow R, semiconductor substrate 1 can be moved relative to the ion flow, whereby the films, products, and foreign substances adhering to the whole perimeter of edge part 1 e of semiconductor substrate 1 are removed.
According as the mean free path is longer under a low pressure or according as the electric field density of the RF electric field or the bias electric field is higher, the total energy density of anisotropic radiation of the ions or cluster ions will be higher. For this reason, the films, products, foreign substances, and others adhering to edge part 1 e of semiconductor substrate 1 can be peeled off with more certainty. As a result of this, as compared with the case of removing these by chemical reaction, the foreign substances and others can be removed effectively and with certainty without depending on the material quality of the adhering films, products, and foreign substances.
Further, in FIG. 1, according as upper discharging electrode 4 a and lower discharging electrode 4 b are nearer to edge part 1 e of semiconductor substrate 1 or according as the tip end part opposing to semiconductor substrate 1 is narrower, it is possible to clean edge part 1 e alone. For this reason, the controllability of the distance from edge part 1 e to the part subjected to the cleaning process can be enhanced.
By a semiconductor substrate cleaning apparatus and a semiconductor substrate producing method described above, the ions are accelerated and radiated onto edge part 1 e. Therefore, as compared with the case in which the ions are not accelerated, there will be an increased number of ions that impinge onto edge part 1 e per unit period of time, and there will be an increased amount of energy in the impinging ions. As a result of this, the films, products, foreign substances, and others at the edge part can be removed with certainty.
Further, by allowing the distance between upper and lower discharging electrodes 4 a and 4 b to be shorter and allowing the shape thereof to be narrower, it is possible to clean edge part 1 e alone with certainty without affecting the central part of semiconductor substrate 1.
Furthermore, since the ions having a longer mean free path under a low pressure and being anisotropically accelerated by the bias electric field are selectively radiated, the distance from edge part 1 e to the part subjected to the cleaning process can be controlled with certainty.
Second Embodiment
Referring to FIG. 2, a semiconductor substrate cleaning apparatus according to the second embodiment of the present invention includes accelerating electrodes 14 a and 14 b constituting a pair of second electrodes, discharging electrodes 14 c and 14 d constituting a pair of first electrodes, a bias power source 5 b constituting a direct-current power source connected to the pair of accelerating electrodes 14 a and 14 b, a high-frequency power source 5 a connected to the pair of discharging electrodes 14 c and 14 d, and a converging coil 7 constituting converging means disposed between accelerating electrodes 14 a and 14 b.
The pair of discharging electrodes 14 c and 14 d and high-frequency power source 5 a constitute ion generating means. The pair of accelerating electrodes 14 a and 14 b opposing to each other to sandwich edge part 1 e, and bias power source 5 b constitute cleaning means.
When a high-frequency voltage is applied to the region sandwiched by discharging electrodes 14 c and 14 d, a plasma is generated in the region shown by a dotted line 6. The plasma to be used is preferably an RF plasma having a frequency of 13.56 MHz, or a microwave plasma having a frequency of 1.45 GHz, though the construction in the drawings is different. The microwave plasma allows plasma discharge at an extremely low pressure of from 10 Pa to 100 Pa. Further, the voltage to be applied between accelerating electrodes 14 a and 14 b is preferably from 100 V to 10,000 V, because the distance between the electrodes is longer.
Edge part 1 e of semiconductor substrate 1 is positioned between converging coil 7 and accelerating electrode 14 b. Semiconductor substrate 1 is held by moving means 10 in the same manner as in the first embodiment. Vacuum chuck 11 is connected to motor 13 by supporting shaft 12, and vacuum chuck 11 can be rotated in the direction shown by arrow R.
In such an apparatus, the plasma is generated by applying an RF electric field from high-frequency power source 5 a to a gap between discharging electrodes 14 c and 14 d while introducing a gas constituting an ion source under a low pressure to the whole region sandwiched by discharging electrodes 14 c and 14 d. This allows ions to be generated. When a bias electric field from bias power source 5 b is applied to a gap between accelerating electrodes 14 a and 14 b, only the ions generated by the plasma discharge are attracted by the bias electric field to accelerating electrode 14 b on the lower side while being converged to a high density by converging coil 7 located in the midway. This allows an ion flow to be anisotropically radiated onto edge part 1 e of semiconductor substrate 1. In this state, by rotating semiconductor substrate 1 in the direction shown by an arrow R, semiconductor substrate 1 can be moved relative to the ion flow, whereby the films, products, and foreign substances adhering to the whole perimeter of edge part 1 e of semiconductor substrate 1 are removed.
Further, in FIG. 2, according as accelerating electrode 14 b is nearer to edge part 1 e or according as the tip end part of accelerating electrode 14 b is narrower as it approaches edge part 1 e, the controllability of the distance from edge part 1 e to the part subjected to the cleaning process can be enhanced.
Such an apparatus also produces effects similar to those produced by the apparatus according to the first embodiment.
Here, in the above-described first and second embodiments, an exemplary case has been shown in which an RF electric field is applied as the plasma discharging source; however, by applying a microwave electric field that can produce a plasma discharge under a lower pressure, the energy density of anisotropic radiation can be enhanced.
Third Embodiment
Referring to FIG. 3, a semiconductor substrate cleaning apparatus according to the third embodiment of the present invention includes a buffer tank 9 a constituting holding means for holding a cleaning fluid, and a nozzle 8 constituting jetting means connected to buffer tank 9 a for jetting cleaning fluid 3 towards an edge part 1 e of semiconductor substrate 1.
A pressurizing pipe 9 b is connected to buffer tank 9 a, and by feeding a high-pressure gas from pressurizing pipe 9 b into buffer tank 9 a, cleaning fluid 3 in buffer tank 9 a can be pressurized and sent to the nozzle 8 side.
Cleaning fluid 3 is constituted with solid particles 3 b and a liquid carrier 3 a (carrier in liquid form). The solid particles 3 b and liquid carrier 3 a in cleaning fluid 3 are limited to those that are inactive to the silicon constituting semiconductor substrate 1. Silica or ceria can be used as solid particles 3 b. Purified water or isopropyl alcohol can be used as liquid carrier 3 a. In order to prevent precipitation of solid particles 3 b, it is preferable to circulate liquid carrier 3 a in accordance with the needs.
Semiconductor substrate 1 is held by a vacuum chuck 11 of moving means 10 so that an edge part 1 e of semiconductor substrate 1 may be positioned immediately under nozzle 8. Vacuum chuck 11 is connected to a motor 13 via a supporting shaft 12 and rotates in the direction shown by an arrow R.
In such an apparatus, cleaning fluid 3 is forced out at a high pressure from nozzle 8 and proceeds in the direction shown by a dotted line 31 by introduction of a high-pressure gas from pressurizing pipe 9 b into buffer tank 9 a. This allows the cleaning fluid to be anisotropically radiated onto edge part 1 e of semiconductor substrate 1. In this state, by rotating semiconductor substrate 1, semiconductor substrate 1 can be moved relative to cleaning fluid 3, whereby the films, products, foreign substances, and others adhering to the whole perimeter of edge part 1 e of semiconductor substrate 1 are removed.
In a semiconductor substrate cleaning apparatus and a semiconductor substrate producing method constructed as above, the cleaning fluid is jetted onto edge part 1 e, so that the stains on the edge part 1 e can be removed with certainty. Moreover, since the solid particles 3 b and liquid carrier 3 a constituting cleaning fluid 3 are both inactive to the semiconductor substrate, cleaning fluid 3 does not penetrate into semiconductor substrate 1. As a result, it is possible to clean edge part 1 e alone with certainty without affecting the central part of semiconductor substrate 1.
Here, in FIG. 3, according as the jetting outlet of nozzle 8 is nearer to edge part 1 e of semiconductor substrate 1 or according as the tip end of the jetting outlet is narrower, the controllability of the distance from edge part 1 e to the part subjected to the cleaning process can be enhanced.
Further, in FIG. 3, cleaning fluid 3 containing solid particles 3 b and liquid carrier 3 a has been shown; however, in order to optimize the energy density of anisotropic radiation, a cleaning fluid containing solid particles or liquid drops and a gaseous carrier can be used instead. In this case, the aforesaid silica or ceria can be used as the solid particles. Water or organic solvents can be used as the liquid drops. Nitrogen, dried air, and water vapor (water molecules) can be used as the gaseous carrier.
Further, in FIG. 3, it is requested that liquid carrier 3 a is a liquid that is not reactive to solid particles 3 b and has a low viscosity.
Furthermore, it is requested that solid particles 3 b have a high hardness, have a uniform particle size, and do not agglomerate.
More preferably, as a combination of solid particles 3 b and liquid carrier 3 a, the combination using silica or ceria as solid particles 3 b and using purified water as liquid carrier 3 a is preferable.
Fourth Embodiment
Referring to FIGS. 4 and 5, a semiconductor substrate cleaning apparatus according to the fourth embodiment of the present invention includes a vessel 9 c constituting holding means for holding a cleaning liquid 23 containing a liquid carrier 23 a that is inactive to a semiconductor substrate 1 and solid particles 23 b that are inactive to semiconductor substrate 1, and moving means 10 for moving semiconductor substrate 1 relative to cleaning liquid 23 while maintaining a state in which cleaning liquid 23 is being in contact with an edge part 1 e of semiconductor substrate 1.
Moving means 10 includes a vacuum chuck 11, a supporting shaft 12 connected to vacuum chuck 11, and a motor 13 connected to supporting shaft 12. Motor 13 can rotate vacuum chuck 11 and semiconductor substrate 1 in the direction shown by an arrow R in FIG. 5. Edge part 1 e of semiconductor substrate 1 is immersed in cleaning liquid 23. In order to prevent precipitation of solid particles 23 b, liquid carrier 23 a is circulated in the vessel 9 c in accordance with the needs.
In this state, by rotating semiconductor substrate 1 in the direction shown by arrow R, semiconductor substrate 1 is moved relative to cleaning liquid 23. Cleaning liquid 23 is anisotropically radiated onto edge part 1 e of semiconductor substrate 1, whereby the films, products, and foreign substances adhering to the whole perimeter of edge part 1 e of semiconductor substrate 1 are removed.
Here, liquid carrier 23 a to be used is preferably a liquid having a high viscosity, for example, ethylene glycol. The solid particles to be used can be silica or ceria.
A semiconductor substrate cleaning apparatus and a semiconductor substrate producing method such as described above produce effects similar to those of the third embodiment.
As shown above, the preferred embodiments of the present invention have been described; however, the embodiments shown herein can be modified in various ways.
First of all, in the first to fourth embodiments, the rotation shaft of the semiconductor substrate has not been referred to. However, the rotation shaft need not be parallel to the direction along which the particles are anisotropically radiated, so that it is possible to change the shaft for anisotropic radiation along the shape of edge part 1 e of semiconductor substrate 1. In this case, it is effective on the side surface of semiconductor substrate 1.
Further, by performing a process with solid particles or liquid drops of the third and fourth embodiments after radiating ion particles in the first and second embodiments, it is possible to remove foreign substances, including the foreign substances that adhere again when the edge part 1 e is processed with the ion particles under a low pressure, from edge part 1 e of semiconductor substrate 1 with more certainty.
According to the present invention, the films, products, and foreign substances adhering to the edge part of the semiconductor substrate can be removed effectively and with certainty, thereby enhancing the capability of preventing the impurity contamination from spreading over the production line. As a result of this, it is possible to realize an environment that can produce a semiconductor substrate having an enhanced performance. Furthermore, the distance from the edge part of the semiconductor substrate to the part subjected to the cleaning process can be controlled with certainty. For this reason, the present invention produces an effect in that the area where the semiconductor chips are to be disposed can be maintained with certainty.
Although the present invention has been described and illustrated in detail, it is clearly understood that the same is by way of illustration and example only and is not to be taken by way of limitation, the spirit and scope of the present invention being limited only by the terms of the appended claims.

Claims (6)

1. A method of producing a semiconductor device, comprising the steps of:
generating ions; and
accelerating said ions by means of an electric field and radiating an ion flow directly onto an edge part of a semiconductor substrate to clean said edge part of said semiconductor substrate.
2. The method of producing a semiconductor device according to claim 1, further comprising the step of moving said semiconductor substrate relative to said ion flow while maintaining a state in which said ion flow is being radiated onto said edge part.
3. The method of producing a semiconductor device according to claim 1, wherein said step of generating ions includes applying a high-frequency voltage between a pair of electrodes to generate said ions between said electrodes.
4. The method of producing a semiconductor device according to claim 1, wherein said step of radiating said ion flow onto said edge part includes accelerating said ions by means of an electric field generated between a pair of electrodes.
5. The method of producing a semiconductor device according to claim 1, wherein said step of radiating said ion flow onto said edge part includes converging said ion flow by means of a coil to radiate ions.
6. The method of producing a semiconductor device according to claim 1, wherein said step of generating ions includes generating at least one kind selected from argon ions and helium ions.
US09/982,779 2001-05-10 2001-10-22 Semiconductor device, method of producing a semiconductor device, and semiconductor substrate cleaning apparatus used for the production method Expired - Fee Related US6837963B2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001-139691(P) 2001-05-10
JP2001139691A JP2002334862A (en) 2001-05-10 2001-05-10 Method for manufacturing semiconductor device and apparatus for cleaning semiconductor substrate used therefor

Publications (2)

Publication Number Publication Date
US20020168879A1 US20020168879A1 (en) 2002-11-14
US6837963B2 true US6837963B2 (en) 2005-01-04

Family

ID=18986426

Family Applications (1)

Application Number Title Priority Date Filing Date
US09/982,779 Expired - Fee Related US6837963B2 (en) 2001-05-10 2001-10-22 Semiconductor device, method of producing a semiconductor device, and semiconductor substrate cleaning apparatus used for the production method

Country Status (2)

Country Link
US (1) US6837963B2 (en)
JP (1) JP2002334862A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040207824A1 (en) * 2002-11-12 2004-10-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20080179010A1 (en) * 2007-01-26 2008-07-31 Lam Research Corporation Bevel etcher with vacuum chuck
US20080182412A1 (en) * 2007-01-26 2008-07-31 Lam Research Corporation Configurable bevel etcher
US20080179297A1 (en) * 2007-01-26 2008-07-31 Lam Research Corporation Bevel etcher with gap control
US20090170334A1 (en) * 2007-12-27 2009-07-02 Tong Fang Copper Discoloration Prevention Following Bevel Etch Process
US10629458B2 (en) 2007-01-26 2020-04-21 Lam Research Corporation Control of bevel etch film profile using plasma exclusion zone rings larger than the wafer diameter

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004107425A1 (en) * 2003-05-28 2004-12-09 Kyoto University Surface treating method using ion beam and surface treating device
JP4593601B2 (en) * 2007-08-03 2010-12-08 キヤノンアネルバ株式会社 Pollutant removal method, semiconductor manufacturing method, and thin film forming apparatus
KR102583556B1 (en) * 2021-01-07 2023-10-10 세메스 주식회사 Apparatus for supplying treating liquid and method for rmoving solid

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4924589A (en) * 1988-05-16 1990-05-15 Leedy Glenn J Method of making and testing an integrated circuit
EP0529888A1 (en) 1991-08-22 1993-03-03 AT&T Corp. Removal of substrate perimeter material
US5213650A (en) * 1989-08-25 1993-05-25 Applied Materials, Inc. Apparatus for removing deposits from backside and end edge of semiconductor wafer while preventing removal of materials from front surface of wafer
JPH06210454A (en) 1993-01-14 1994-08-02 Hitachi Zosen Corp Beveling method for hardly machinable material
US5664167A (en) * 1995-03-27 1997-09-02 Delco Electronics Corporation Microprogrammed timer processor having a variable loop resolution architecture
US5759424A (en) * 1994-03-24 1998-06-02 Hitachi, Ltd. Plasma processing apparatus and processing method
JPH10189515A (en) 1996-12-24 1998-07-21 Seiko Epson Corp Method and apparatus for removal of inessential object in peripheral edge of substrate
US5960272A (en) * 1995-10-16 1999-09-28 Kabushiki Kaisha Toshiba Element-isolating construct of a semiconductor integrated circuit having an offset region between impurity doped regions, and process of manufacturing the construct
US6004631A (en) * 1995-02-07 1999-12-21 Seiko Epson Corporation Apparatus and method of removing unnecessary matter and coating process using such method
US6153361A (en) * 1999-01-19 2000-11-28 United Microelectronics Corp Method of removing photoresist at the edge of wafers
US6222990B1 (en) * 1997-12-03 2001-04-24 Steag Rtp Systems Heating element for heating the edges of wafers in thermal processing chambers
US6372367B1 (en) * 1998-05-12 2002-04-16 Hitachi, Ltd. Magnetic recording medium, method for producing the same and magnetic recording apparatus using the same

Patent Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4924589A (en) * 1988-05-16 1990-05-15 Leedy Glenn J Method of making and testing an integrated circuit
US5213650A (en) * 1989-08-25 1993-05-25 Applied Materials, Inc. Apparatus for removing deposits from backside and end edge of semiconductor wafer while preventing removal of materials from front surface of wafer
EP0529888A1 (en) 1991-08-22 1993-03-03 AT&T Corp. Removal of substrate perimeter material
JPH05211140A (en) 1991-08-22 1993-08-20 American Teleph & Telegr Co <Att> Method for removal of material around substrate
US5425846A (en) * 1991-08-22 1995-06-20 At&T Corp. Removal of substrate perimeter material
JPH06210454A (en) 1993-01-14 1994-08-02 Hitachi Zosen Corp Beveling method for hardly machinable material
US5759424A (en) * 1994-03-24 1998-06-02 Hitachi, Ltd. Plasma processing apparatus and processing method
US6004631A (en) * 1995-02-07 1999-12-21 Seiko Epson Corporation Apparatus and method of removing unnecessary matter and coating process using such method
US5664167A (en) * 1995-03-27 1997-09-02 Delco Electronics Corporation Microprogrammed timer processor having a variable loop resolution architecture
US5960272A (en) * 1995-10-16 1999-09-28 Kabushiki Kaisha Toshiba Element-isolating construct of a semiconductor integrated circuit having an offset region between impurity doped regions, and process of manufacturing the construct
JPH10189515A (en) 1996-12-24 1998-07-21 Seiko Epson Corp Method and apparatus for removal of inessential object in peripheral edge of substrate
US6222990B1 (en) * 1997-12-03 2001-04-24 Steag Rtp Systems Heating element for heating the edges of wafers in thermal processing chambers
US6372367B1 (en) * 1998-05-12 2002-04-16 Hitachi, Ltd. Magnetic recording medium, method for producing the same and magnetic recording apparatus using the same
US6153361A (en) * 1999-01-19 2000-11-28 United Microelectronics Corp Method of removing photoresist at the edge of wafers

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040207824A1 (en) * 2002-11-12 2004-10-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US6952253B2 (en) * 2002-11-12 2005-10-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US10620545B2 (en) 2002-11-12 2020-04-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US10222706B2 (en) 2002-11-12 2019-03-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9091940B2 (en) 2002-11-12 2015-07-28 Asml Netherlands B.V. Lithographic apparatus and method involving a fluid inlet and a fluid outlet
US8797503B2 (en) 2002-11-12 2014-08-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method with a liquid inlet above an aperture of a liquid confinement structure
US20110214687A1 (en) * 2007-01-26 2011-09-08 Lam Research Corporation Configurable bevel etcher
US7943007B2 (en) 2007-01-26 2011-05-17 Lam Research Corporation Configurable bevel etcher
US7858898B2 (en) 2007-01-26 2010-12-28 Lam Research Corporation Bevel etcher with gap control
US8580078B2 (en) 2007-01-26 2013-11-12 Lam Research Corporation Bevel etcher with vacuum chuck
US8721908B2 (en) 2007-01-26 2014-05-13 Lam Research Corporation Bevel etcher with vacuum chuck
US9053925B2 (en) 2007-01-26 2015-06-09 Lam Research Corporation Configurable bevel etcher
US20080179297A1 (en) * 2007-01-26 2008-07-31 Lam Research Corporation Bevel etcher with gap control
US20080182412A1 (en) * 2007-01-26 2008-07-31 Lam Research Corporation Configurable bevel etcher
US20080179010A1 (en) * 2007-01-26 2008-07-31 Lam Research Corporation Bevel etcher with vacuum chuck
US10629458B2 (en) 2007-01-26 2020-04-21 Lam Research Corporation Control of bevel etch film profile using plasma exclusion zone rings larger than the wafer diameter
US10811282B2 (en) 2007-01-26 2020-10-20 Lam Research Corporation Upper plasma-exclusion-zone rings for a bevel etcher
US10832923B2 (en) 2007-01-26 2020-11-10 Lam Research Corporation Lower plasma-exclusion-zone rings for a bevel etcher
US20090170334A1 (en) * 2007-12-27 2009-07-02 Tong Fang Copper Discoloration Prevention Following Bevel Etch Process

Also Published As

Publication number Publication date
JP2002334862A (en) 2002-11-22
US20020168879A1 (en) 2002-11-14

Similar Documents

Publication Publication Date Title
US8029622B2 (en) Substrate processing apparatus, liquid film freezing method and substrate processing method
EP1583136B1 (en) Control of ambient environment during wafer drying using proximity head
EP1583137B1 (en) Substrate meniscus interface and methods for operation
TWI415186B (en) Apparatus for the removal of a fluorinated polymer from a substrate and methods therefor
US7731802B2 (en) Methods for transitioning a fluid meniscus to and from surfaces of a substrate
JP6048043B2 (en) Substrate cleaning method, substrate cleaning apparatus, and vacuum processing system
EP1582269A1 (en) Proximity meniscus manifold
KR102027725B1 (en) Substrate processing apparatus and substrate processing method
CN111146084A (en) Method for manufacturing semiconductor device with metal film
US6488779B1 (en) Method and apparatus for cleaning substrates
US10192758B2 (en) Substrate processing apparatus
US6837963B2 (en) Semiconductor device, method of producing a semiconductor device, and semiconductor substrate cleaning apparatus used for the production method
JPH09181026A (en) Semiconductor device manufacturing apparatus
US20120055506A1 (en) Substrate cleaning method
US20080135069A1 (en) Method and apparatus for active particle and contaminant removal in wet clean processes in semiconductor manufacturing
WO2009036218A1 (en) Apparatus and method for cleaning wafer edge using energetic particle beams
JP7154697B2 (en) Workpiece processing method
WO2008143798A1 (en) An apparatus, a system and a method of preventing premature drying
CN112385017A (en) Cleaning method and substrate processing apparatus
JP3597105B2 (en) Plasma processing apparatus and plasma processing method
JP2000068172A (en) Apparatus and method of separating sample
JP2000100763A (en) Processing apparatus for substrate surface
US6723651B2 (en) Plasma processing method
US6869516B2 (en) Method for removing electrolyte from electrical contacts and wafer touching areas
JP7471029B1 (en) Method for removing electrostatic charge from semiconductor wafer

Legal Events

Date Code Title Description
AS Assignment

Owner name: MITSUBISHI DENKI KABUSHIKI KAISHA, JAPAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:TANAKA, HIROSHI;YOKOI, NAOKI;ASAOKA, YASUHIRO;AND OTHERS;REEL/FRAME:012283/0542

Effective date: 20011001

Owner name: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD., JAPAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:TANAKA, HIROSHI;YOKOI, NAOKI;ASAOKA, YASUHIRO;AND OTHERS;REEL/FRAME:012283/0542

Effective date: 20011001

AS Assignment

Owner name: RENESAS TECHNOLOGY CORP., JAPAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:MITSUBISHI DENKI KABUSHIKI KAISHA;REEL/FRAME:014502/0289

Effective date: 20030908

AS Assignment

Owner name: RENESAS TECHNOLOGY CORP., JAPAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:MITSUBISHI DENKI KABUSHIKI KAISHA;REEL/FRAME:015185/0122

Effective date: 20030908

FPAY Fee payment

Year of fee payment: 4

AS Assignment

Owner name: RENESAS ELECTRONICS CORPORATION, JAPAN

Free format text: CHANGE OF NAME;ASSIGNOR:RENESAS TECHNOLOGY CORP.;REEL/FRAME:024973/0001

Effective date: 20100401

FPAY Fee payment

Year of fee payment: 8

REMI Maintenance fee reminder mailed
LAPS Lapse for failure to pay maintenance fees
STCH Information on status: patent discontinuation

Free format text: PATENT EXPIRED DUE TO NONPAYMENT OF MAINTENANCE FEES UNDER 37 CFR 1.362

FP Expired due to failure to pay maintenance fee

Effective date: 20170104