US6732746B2 - Reduced particle contamination manufacturing and packaging for reticles - Google Patents
Reduced particle contamination manufacturing and packaging for reticles Download PDFInfo
- Publication number
- US6732746B2 US6732746B2 US09/737,139 US73713900A US6732746B2 US 6732746 B2 US6732746 B2 US 6732746B2 US 73713900 A US73713900 A US 73713900A US 6732746 B2 US6732746 B2 US 6732746B2
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- US
- United States
- Prior art keywords
- reticle
- pellicle
- pelliclized
- inert gas
- optically inert
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related, expires
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/6735—Closed carriers
- H01L21/67359—Closed carriers specially adapted for containing masks, reticles or pellicles
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/66—Containers specially adapted for masks, mask blanks or pellicles; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
- G03F7/70741—Handling masks outside exposure position, e.g. reticle libraries
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70983—Optical system protection, e.g. pellicles or removable covers for protection of mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/6735—Closed carriers
- H01L21/67366—Closed carriers characterised by materials, roughness, coatings or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/6735—Closed carriers
- H01L21/67389—Closed carriers characterised by atmosphere control
- H01L21/67393—Closed carriers characterised by atmosphere control characterised by the presence of atmosphere modifying elements inside or attached to the closed carrierl
Definitions
- the present invention relates to photolithography of semiconductor devices, and more particularly, to a method of making and packaging reticles resulting in reduced particle contamination.
- Photolithography is a process that is commonly used in the manufacture of integrated circuits. The process involves the deposition of a photoresist layer onto an underlying substrate layer. The photoresist is then selectively exposed to light, which chemically alters the photoresist. The photoresist is then developed and those portions of the photoresist that are exposed to light are either hardened or softened, depending upon whether or not the photoresist is negative or positive photoresist, respectively.
- the reticle is covered by a pellicle.
- a pellicle is a thin film of optical grade polymer that is stretched on a frame and secured to the reticle. The pellicle's purpose is to prevent airborne dirt from collecting on the mask and acting as an opaque spot. During the exposure, the dirt is held out of the focal plane and does not print on the wafer.
- EUV extreme ultraviolet
- One wavelength that is becoming popular is 157 nm.
- current pellicles are formed from a material that are either not sufficiently transparent to radiation at 157 nm or does not have sufficient durability under these process conditions. Therefore, in many applications, reticles are manufactured without pellicles. This causes increased risk to contamination of the reticle.
- the reticle after the reticle has been manufactured, the reticle must be transported from the manufacturer to the semiconductor fabrication facility (known as a “fab”). This transport process increases the risk of contamination.
- a reticle is stored and shipped in reticle containers without any devices specifically designed to remove particles from the environment in which they are enclosed.
- a method of transporting a reticle is disclosed.
- the reticle is placed in a reticle carrier that has an ionizer.
- FIG. 1 is a schematic diagram illustrating a pellicle carrier formed in accordance with the present invention
- FIG. 2 shows a flow diagram illustrating the steps of handling a reticle in accordance with the present invention
- FIG. 3 shows a flow diagram illustrating the steps of mounting a pellicle onto a reticle in accordance with the present invention
- FIGS. 4 a-c show schematic diagrams of a pellicle formed in accordance with the present invention.
- FIG. 5 shows a flow diagram illustrating the steps of modifying a reticle and pellicle combination in accordance with the present invention
- FIG. 6 shows a flow diagram illustrating the steps of modifying a reticle and pellicle combination in accordance with an alternative embodiment of the present invention
- FIG. 7 shows a flow diagram illustrating the steps of modifying a reticle and pellicle combination in accordance with another alternative embodiment of the present invention.
- FIG. 8 is a schematic diagram of a pellicle frame used with the method of FIG. 7 .
- the present invention offers a way to purify the environment in a reticle carrier to prevent contamination.
- the reticle carrier includes an ionizer that produces ions. Because particles and other contaminants often hold a net electrical charge allowing electrostatic forces to attract and hold particles to the surface of the reticle, the ions act to neutralize the contaminants within the reticle carrier. This prevents the contaminants from adhering to reticle surfaces, and thus mitigating the need for a pellicle.
- the mask is cleaned and inspected for pattern fidelity, hard defects, and soft defects, including particles and contamination.
- the mask is placed in a super clean mini-environment pod, such as a standard mechanical interface (SMIF) pod.
- SMIF standard mechanical interface
- the SMIF pod is a self contained, portable mini-environment that surrounds semiconductor production wafers and minimizes exposure to contaminents that could adversley affect chip performance and yield. The above steps are all conventionally performed in the prior art.
- the SMIF pod is modified to include an ionizer that generates ions for neutralizing charged contaminants.
- a SMIF pod 101 is shown.
- the SMIF pod 101 includes an ionizer 103 , a pair of oppositely charged particle collectors 105 , and a reticle 107 .
- the ionizer 103 generates ions that will neutralize contaminants within the SMIF pod 101 .
- the particle collectors 105 are oppositely charged. This results in the contaminants being attracted to one or the other of the particle collectors 105 .
- the reticle 107 is preferably placed with the chromium side 109 down to prevent particles from landing on the particle sensitive side of the reticle.
- FIG. 2 The entire process of handling the manufactured reticle is shown in FIG. 2 .
- the reticle is placed faced down into the SMIF pod 101 .
- the SMIF pod 101 is subsequently placed in a transport box while still inside the clean room.
- the transport box is then shipped to outside wafer fabs.
- the transport box is wiped down per standard cleaning protocols and moved to inside the clean room.
- the mini-environment SMIF pod 101 is removed from the transport box and either moved to the lithography tools if needed immediately for wafer production or into storage if not.
- the SMIF pod 101 is interfaced directly with the lithography tool so that the reticle is never exposed directly to factory ambient air. Automatic transfer and loads of the reticle is done into the photolithography stepper. Finally, at box 211 , in situ laser cleaning is performed prior to wafer exposure to remove adsorbed substances.
- the light source may be either the one used to expose the wafers or a separate source.
- a method for removing transmission inhibiting chemical species during the manufacturing process of the reticle.
- optical contaminants exist adsorbed on the reticle and pellicle surfaces, in gas phase in the space between the reticle and the pellicle, or both.
- a pellicle is mounted on the patterned side of the reticle to protect it from contamination. This mounting process is invariably performed in a clean room environment to prevent particles from being introduced into the process.
- the gas space between the pellicle and reticle (hereinafter referred to as the “interpellicle space”) will contain air.
- Common atmospheric substances include carbon and oxygen containing species such as O 2 , CO 2 , and H 2 O, which are known to inhibit the transmission of radiation having wavelengths commonly used in the photolithography process, such as 157 nm. These species may exist: (1) in the gas phase in the interpellicle space, (2) adsorbed on the reticle surface, including either the substrate or thin film surfaces, (3) adsorbed on and absorbed in the pellicle, (4) or adsorbed on the pellicle frame surfaces.
- the transmission of 157 nm wavelength radiation can be reduced by the presence of even monolayer quantities of such chemical species. Removal of these species or substitution of these species with other materials which do not absorb the exposing radiation wavelength is therefore required for photolithographic processes, especially those in the extreme ultra-violet region and below.
- the reticle (referred to as a mask in FIG. 3) is transferred into a process chamber with a pellicle at step 301 .
- the chamber is evacuated and maintained at vacuum or filled with an optically inert gas (such as nitrogen) at approximately atmospheric pressure (plus or minus 50 psi).
- optically inert gas it is meant a gas that has minimal or negligible effect on the transmission of radiation at the wavelength of the exposure radiation used in the photolithography stepper.
- the mask and pellicle surfaces are then exposed to either (1) UV radiation, (2) plasma, (3) ozone, (4) heat, or (5) a combination of the above.
- This exposure will remove adsorbed and absorbed species. In other words, the treatment will drive desorption.
- an optically inert gas is used rather than vacuum, it is flowed during this process to carry away desorbed substances.
- the optically inert gas such as nitrogen, may also be heated to accelerate the desorbtion process.
- the time of exposure at step 303 will depend upon the final exposure radiation transmission level required, the exposure option used, the pellicle material chosen, the gas flow rate or vacuum pressure, the convective mass transfer coefficient (if gas is used), and the species adsorbed and absorbed on the incoming photo mask.
- the treatment of step 303 (of the UV radiation, plasma, ozone, heat, etc.) is discontinued.
- the gas flow or vacuum maybe simultaneously discontinued or allowed to continue for a period of time. The exact operating process and its optimization would depend on the equipment geometry, materials, flow path and other design perimeters.
- step 305 once the target exposure time is reached, the chamber is filled with an optically inert gas (if vacuum was used in steps 301 and 303 ) or the gas flow is stopped (if optically inert gas was used).
- step 307 robotic systems mount the pellicle either in situ or after automated transfer to another station (all under an optically inert gas environment).
- the reticle is maintained in an optically inert gas atmosphere during subsequent storage and shipping by means of mini-environment SMIF pods.
- loading onto photolithographic tools can be achieved by use of robotics systems which transfer the reticle from the pod to the tool and serve as an interface which maintains the optically inert gas environment surrounding the photo mask.
- the pellicle 401 includes a pellicle frame 405 and a pellicle film 403 .
- the pellicle film 403 is stretched over the pellicle frame 405 .
- the frame is filled with an absorbent material.
- the absorbent material may be one of the well known polar and hydrogen bonding absorbent materials.
- the absorbent may be present in one or all sides of the pellicle frame.
- the absorbent acts as a scavenger for any traces of unwanted gases. Note that the shape and packing density shown in FIG. 4 c is only for illustrative purposes. Note that the interior or exterior frame wall may be constructed or coated with a solid adsorbent material as well.
- the reticle is maintained in an optically inert gas atmosphere during subsequent storage and shipping by means of mini-environment SMIF pods.
- loading onto photolithographic tools can be achieved by use of robotics systems which transfer the reticle from the SMIF pod to the tool and serve as an interface which maintains the optically inert gas environment surrounding the reticle.
- the reticle After the reticle has been pelliclized and completed all of its manufacturing and inspection steps at step 601 , it is transferred to a process chamber at step 603 where it is exposed to a continuous flow of optically inert gas and either UV radiation, plasma, ozone, heat, or a combination of the above.
- the flowing gas creates a chemical potential gradiant of the transmission inhibiting compounds across the reticle/gas phase interface to drive mass transfer.
- the chemical potential gradiant is augmented with ultra-violet or other means to drive desorbtion and removal of contaminants.
- the gas also may be heated to a higher temperature prior to chamber introduction.
- the time of exposure will depend on various factors discussed above.
- the reticle is maintained in an optically inert gas atmosphere during subsequent storage and shipping by means of mini-environment SMIF pods.
- loading onto photolithographic tools can be achieved by use of robotics systems which transfer the reticle from the SMIF pod to the tool and serve as an interface which maintains the optically inert gas environment surrounding the reticle.
Abstract
Description
Claims (6)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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US09/737,139 US6732746B2 (en) | 1999-12-30 | 2000-12-13 | Reduced particle contamination manufacturing and packaging for reticles |
US10/256,357 US6763608B2 (en) | 1999-12-30 | 2002-09-26 | Method of transporting a reticle |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/477,795 US6279249B1 (en) | 1999-12-30 | 1999-12-30 | Reduced particle contamination manufacturing and packaging for reticles |
US09/737,139 US6732746B2 (en) | 1999-12-30 | 2000-12-13 | Reduced particle contamination manufacturing and packaging for reticles |
Related Parent Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/477,795 Division US6279249B1 (en) | 1999-12-30 | 1999-12-30 | Reduced particle contamination manufacturing and packaging for reticles |
US09/737,125 Division US6715495B2 (en) | 1999-12-30 | 2000-12-13 | Reduced particle contamination manufacturing and packaging for reticles |
US09477795 Division | 2000-12-13 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
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US10/256,357 Division US6763608B2 (en) | 1999-12-30 | 2002-09-26 | Method of transporting a reticle |
Publications (2)
Publication Number | Publication Date |
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US20010005944A1 US20010005944A1 (en) | 2001-07-05 |
US6732746B2 true US6732746B2 (en) | 2004-05-11 |
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Application Number | Title | Priority Date | Filing Date |
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US09/477,795 Expired - Lifetime US6279249B1 (en) | 1999-12-30 | 1999-12-30 | Reduced particle contamination manufacturing and packaging for reticles |
US09/737,125 Expired - Fee Related US6715495B2 (en) | 1999-12-30 | 2000-12-13 | Reduced particle contamination manufacturing and packaging for reticles |
US09/737,139 Expired - Fee Related US6732746B2 (en) | 1999-12-30 | 2000-12-13 | Reduced particle contamination manufacturing and packaging for reticles |
US10/256,357 Expired - Fee Related US6763608B2 (en) | 1999-12-30 | 2002-09-26 | Method of transporting a reticle |
US10/818,311 Expired - Fee Related US7368020B2 (en) | 1999-12-30 | 2004-04-05 | Reduced particle contamination manufacturing and packaging for reticles |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
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US09/477,795 Expired - Lifetime US6279249B1 (en) | 1999-12-30 | 1999-12-30 | Reduced particle contamination manufacturing and packaging for reticles |
US09/737,125 Expired - Fee Related US6715495B2 (en) | 1999-12-30 | 2000-12-13 | Reduced particle contamination manufacturing and packaging for reticles |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
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US10/256,357 Expired - Fee Related US6763608B2 (en) | 1999-12-30 | 2002-09-26 | Method of transporting a reticle |
US10/818,311 Expired - Fee Related US7368020B2 (en) | 1999-12-30 | 2004-04-05 | Reduced particle contamination manufacturing and packaging for reticles |
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US (5) | US6279249B1 (en) |
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Also Published As
Publication number | Publication date |
---|---|
US6279249B1 (en) | 2001-08-28 |
US6715495B2 (en) | 2004-04-06 |
US6763608B2 (en) | 2004-07-20 |
US20030035096A1 (en) | 2003-02-20 |
US7368020B2 (en) | 2008-05-06 |
US20040191649A1 (en) | 2004-09-30 |
US20010005944A1 (en) | 2001-07-05 |
US20010006418A1 (en) | 2001-07-05 |
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