US6707136B2 - Multi-layer lead frame for a semiconductor device - Google Patents
Multi-layer lead frame for a semiconductor device Download PDFInfo
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- US6707136B2 US6707136B2 US10/306,670 US30667002A US6707136B2 US 6707136 B2 US6707136 B2 US 6707136B2 US 30667002 A US30667002 A US 30667002A US 6707136 B2 US6707136 B2 US 6707136B2
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49589—Capacitor integral with or on the leadframe
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- H—ELECTRICITY
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48464—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area also being a ball bond, i.e. ball-to-ball
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49109—Connecting at different heights outside the semiconductor or solid-state body
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
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- H01L2924/14—Integrated circuits
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
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- H01L2924/19041—Component type being a capacitor
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19102—Disposition of discrete passive components in a stacked assembly with the semiconductor or solid state device
- H01L2924/19103—Disposition of discrete passive components in a stacked assembly with the semiconductor or solid state device interposed between the semiconductor or solid-state device and the die mounting substrate, i.e. chip-on-passive
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Wire Bonding (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
A multilayer lead frame for decoupling a power supply to a semiconductor die includes overlaying first and second lead frame bodies having an insulator disposed therebetween and at least one main lead finger extending from each body. The bodies act as a capacitor to decouple the power supply to the die. One of the bodies and respective finger provides one of power supply and ground connections for wire bonding with the die, and the other of the bodies provides the other of power supply and ground connections for wire bonding with the die. The first body includes a die paddle for supporting the die, and the second body includes a plate for overlaying the paddle with the insulator disposed between the paddle and plate, thereby providing an electrical decoupling effect therebetween upon supplying power and ground connections, respectively.
Description
This application is a continuation of application Ser. No. 09/941,020, filed Aug. 28, 2001, now U.S. Pat. No. 6,515,353, issued Feb. 4, 2003, which is a continuation of application Ser. No. 09/633,415, filed Aug. 7, 2000, now U.S. Pat. No. 6,307,255, issued Oct. 23, 2001, which is a continuation of application Ser. No. 09/371,681, filed Aug. 10, 1999, now U.S. Pat. No. 6,124,630, issued Sep. 26, 2000, which is a continuation of application Ser. No. 09/002,161, filed Dec. 31, 1997, now U.S. Pat. No. 5,965,936, issued Oct. 12, 1999, which is a continuation of application Ser. No. 08/811,343, filed Mar. 4, 1997, now U.S. Pat. No. 5,734,198, issued Mar. 31, 1998, which is a continuation of application Ser. No. 08/711,668, filed Sep. 4, 1996, abandoned.
1. Field of the Invention
This invention relates in general to a semiconductor lead package system and, more particularly, to a multilayer lead frame for decoupling the power supply to an integrated circuit chip.
2. State of the Art
A semiconductor integrated circuit (IC) packaged device (part) generally includes an IC chip (die) being connected to inner leads of a lead frame by wire bonds. The chip, wire bonds, and inner leads are completely encapsulated for protection with a substance, such as plastic. Outer leads communicate with the inner leads of the lead frame, but the outer leads typically remain exposed for mounting of the packaged device to external circuitry, such as a printed circuit board.
In a conventional IC packaged device, a semiconductor die is placed on and bonded to a center die paddle of a lead frame for support. Inner lead fingers of the lead frame are disposed proximate to the paddle but do not contact or communicate with the paddle. Rather, wire bonds communicate between contact pads (terminals) on the die and the inner lead fingers of the lead frame by spanning the gap between the die and the fingers. The wire bonds allow for the transmission of the electrical signals between the die and the lead frame.
The recent production of three (3) volt IC chips has created the need for better power supply stability when testing and using the parts. Small spikes, glitches, bounces, noise, or the like (collectively “distortions”) on the power supply are more likely to cause failure in these 3-volt parts than in five (5) volt parts which have a better margin of error for power supply distortions. Namely, a given distortion at 3 volts is a higher percentage of the overall voltage than that at 5 volts.
In an effort to resolve potential failure from voltage distortions, decoupling capacitors have been mounted externally to the part on a board, or mounted on a handler during testing, in order to ensure a cleaner voltage supply to the part. However, for best decoupling, a capacitor must be mounted as close to the part as possible. But in an effort to mount a capacitor close to a part, other drawbacks usually arise. For example, a capacitor can be embodied on a die, but this takes up valuable and limited die space. Also, when testing a part in a handler, it is difficult to mount a capacitor close enough to the part to provide a reasonable amount of decoupling.
Thus, in an attempt to provide power supply decoupling, and also to improve heat dissipation and electrical performance, it has been known to use a multilayer lead frame wherein one of power supply and ground connections is supplied through a first layer, and the other of power supply and ground connections is supplied through a second layer. For example, U.S. Pat. No. 4,891,687 issued to Mallik et al. on Jan. 2, 1990, discloses a multilayer IC package. However, this disclosure requires the use of two conductive plates overlaying each other for power and ground, respectively, and a separate lead frame overlaying the plates for wire bonding. As such, the solution is undesirably complex. Namely, two separate layers of adhesive must bond the two plates and lead frame, one plate must have a center portion punched out for placement of the die and for wire bonding the die with the plates, and special tabs must be placed in precise locations on the plates for electrically connecting the plates with lead fingers of the lead frame.
Similarly, U.S. Pat. No. 4,965,654, issued to Karner et al. on Oct. 23, 1990, discloses a semiconductor package with a ground plane. However, in this case, the adaptation is only for a Lead Over Chip (LOC) implementation, and there are not two separate plates for power supply and ground connections, but rather only a ground plane and a lead frame overlaying the ground plane. Consequently, the decoupling capacitive effect is not as complete. Furthermore, the ground plane is actually two separate plates overlaying the die and proximate the bonding pads. This is necessary in order to allow for wire bonding of the lead fingers with the centrally located pads on the die. Moreover, the ground plane has special, small, cut-away portions on a surface for wire bonding with the die.
Given the foregoing problems associated with existing art and techniques, objects of the present invention are to provide a semiconductor lead package system that provides good decoupling of a power supply to a semiconductor die with a simplified multilayer lead frame.
According to principles of the present invention in its preferred embodiment, a multilayer lead frame for decoupling a power supply to a semiconductor die includes overlaying first and second lead frame bodies having an insulator disposed therebetween and at least one main lead finger extending from each body. The bodies act as a capacitor to decouple the power supply to the die. One of the bodies and a respective finger provides one of power supply and ground connections for wire bonding with the die, and the other of the bodies provides the other of power supply and ground connections for wire bonding with the die.
According to further principles of the present invention, the first body includes a die paddle for supporting the die, and the second body includes a plate. The paddle overlays the plate with the insulator disposed in between the paddle and plate, thereby providing an electrical decoupling effect therebetween upon supplying power and ground connections respectively.
According to further principles of the present invention, a method of decoupling a power supply is disclosed for a semiconductor die using a multilayer lead frame as disclosed herein. The method comprises the steps of (1) supplying one of a power signal and a ground connection to the die through the first main lead finger extending from one of the paddle and plate, and wherein a wire bond communicates between the first main lead finger and one of a power and ground terminals of the die, and (2) supplying the other of the power signal and ground connection to the die through the second main lead finger extending from the other of the paddle and plate, and wherein a wire bond communicates between the second main lead finger and the other of the power and ground terminals of the die.
The aforementioned principles of the present invention provide an improved multilayer lead frame for decoupling a power supply to a semiconductor die. Other objects, advantages, and capabilities of the present invention will become more apparent as the description proceeds.
FIG. 1 is a perspective view of an exploded representation of one embodiment of the present invention showing the spacial relationship between an IC chip and the present invention multilayer lead frame.
FIG. 2 is a plan view of an alternate embodiment of the present invention multilayer lead frame.
FIG. 3 is a cross-section view of a packaged IC device embodying the multilayer lead frame of the present invention.
FIG. 1 is a perspective view of an exploded representation of one embodiment of the present invention showing the spacial relationship between an IC chip (die) 10 and the present invention multilayer lead frame 20. Lead frame 20 comprises first conducting lead frame body 25 having a die paddle 30 for supporting the die, and at least one first main lead finger 35 communicating with the paddle. Lead frame 20 further comprises a second conducting lead frame body 40 having a plate 45 and at least one second main lead finger 50 communicating with the plate. In the preferred embodiment, each main lead finger 35 and 50 is formed as a part of the paddle and plate, respectively, extending therefrom. Paddle 30 overlays plate 45 (or it could be said plate 45 overlays paddle 30), and insulator 55 is disposed therebetween.
One of paddle 30 and plate 45, and respective main lead finger 35 and 50, provides one of power supply and ground connections for wire bonding with one of power and ground terminals 85 and 90 of die 10. The other of the paddle and plate, and respective communicating main lead finger, provides the other of power supply and ground connections for wire bonding with the respective power and ground terminals 85 and 90 of the die.
In its preferred embodiment, paddle 30 is of a shape and dimension substantially similar to die 10. Namely, a circumferential dimension of paddle 30 is of a dimension substantially similar to a circumferential dimension of die 10. Likewise, plate 45 and insulator 55 are of a shape and dimension substantially similar to paddle 30.
Also in its preferred embodiment, insulator 55 is a double-sided thermosetting or thermoplastic adhesive coated polyimide film (tape), such as that sold under the trade name duPont Kapton®, or a sprayed-on polyimide or other highly dielectric material. Insulator 55 adheres paddle 30 to plate 45 and protects them from electrically shorting with each other.
It should be noted here that lead finger bar supports 95 are not pertinent to the invention other than for supporting the lead fingers as part of the lead frame prior to being clipped off upon encapsulation of the die as is well known in the art. Also, although not shown in the drawing, it is understood by those of ordinary skill in the art that an insulator may be disposed between paddle 30 and die 10 as appropriate, depending on the type of die being used.
In reference to an example for this embodiment of the invention, assume first main lead finger 35 of paddle 30 is designated to receive a power supply, and terminal 85 of die 10 is designated as a power supply terminal. Assume also that second main lead finger 50 of plate 45 is designated as a ground connection finger, and terminal 90 is a ground connection terminal for die 10. In this example, first main lead finger 35 would be wire bonded to power terminal 85 of die 10, and second main lead finger 50 would be wire bonded to ground terminal 90 of die 10. Any other signal connections are properly wire bonded between terminals 80 of die 10 and lead fingers 70 and 75 of either lead frame body, respectively. This configuration allows the paddle and plate to act as a capacitor to decouple the power supply to the die, ensuring a more clean and stable voltage signal supply to the die.
This example configuration also demonstrates the simplicity of the present invention in providing a clean power supply to a die. Namely, (1) a separate lead frame does not overlay the paddle and plate for wire bonding as in the prior art; (2) no special punched out portions need to be created in the paddle or plate for placement of the die as in the prior art; (3) no special tabs need to be placed in precise locations on the paddle and plate for electrically connecting such with lead fingers of the lead frame as in the prior art; and (4) no special notched portions need to be placed on the paddle and plate for wire bonding with the lead fingers as in the prior art.
Referring now to FIG. 2, a plan view of an alternate embodiment of the present invention multilayer lead frame is depicted. Although shown separately in this drawing, first lead frame body 102 includes paddle 105 which overlays plate 110 of second lead frame body 112 according to principles of the present invention, and an insulator is disposed therebetween (not shown). First main lead finger 115 extends from paddle 105 for supplying one of power and ground connections, and second main lead finger 120 extends from plate 110 for supplying the other of power and ground connections. In this embodiment, all of the signal lead fingers 125 are disposed proximate to paddle 105 as part of first lead frame body 102, rather than some being disposed proximate to plate 110 as part of second body 112.
Although FIGS. 1 and 2 depict two examples of how the paddle and plate are shaped, and how and where the main lead fingers could extend from the paddle and plate, and how and where the signal lead fingers could be disposed proximate to the paddle and plate, it is obvious that any number of shapes and configurations could be used, and any number of lead fingers could be employed, in coordination with the die that is to be wire bonded with the lead frame. For example, in FIG. 2, main lead fingers 115 and 120 could connect at any location around the periphery of the respective paddle and plate 105 and 110. Specifically, the location of one of signal lead fingers 125 could be designated as the location for the connection of main lead finger 115. Likewise, first lead frame body 102 is currently referenced with paddle 105 for supporting the die and overlaying plate 110, and second body 112 is referenced with plate 110. However, if second body 112 were to overlay first lead frame body 102, then reference 110 would be considered the paddle for supporting the die, and reference 105 would be considered the plate.
FIG. 3 is a cross-section view of a packaged IC device 130 embodying the multilayer lead frame of the present invention. Die paddle 135 supports die 140 and overlays plate 145 with insulator 150 disposed therebetween.
One of paddle 135 and plate 145 provides one of power supply and ground connections for wire bonding with one of power and ground terminals of die 140. The other of the paddle and plate provides the other of power supply and ground connections for wire bonding with the respective power and ground terminals of the die.
While a preferred embodiment of the invention has been disclosed, various modes of carrying out the principles disclosed herein are contemplated as being within the scope of the following claims. Therefore, it is understood that the scope of the invention is not to be limited except as otherwise set forth in the claims.
Claims (11)
1. A lead frame having at least two layers and a semiconductor die comprising:
a first conducting lead frame body including a die paddle for supporting a semiconductor die, the die paddle having a perimeter, at least one first main lead finger depending from the die paddle, a first lead finger bar depending solely from the at least one first main lead finger supporting a first plurality of lead fingers extending from the first lead finger bar adjacent a first portion of the perimeter of the die paddle;
a second conducting lead frame body including a plate and at least one second main lead finger depending from the plate;
at least one additional lead frame segment including one lead finger bar supporting an additional plurality of lead fingers, the lead fingers of the at least one additional lead finger segment extending from the first lead finger bar to adjacent one of the die paddle and the plate;
a dielectric material disposed between and substantially touching the die paddle and the plate, the dielectric material being selected from a group consisting of a polyimide and an adhesive tape; and
a semiconductor die attached to the die paddle having wire bonds to the at least one first and at least one second main lead fingers and the first and additional pluralities of lead fingers.
2. The lead frame of claim 1 , wherein the die paddle and the at least one first main lead finger provide a power supply connection for wire bonding with the semiconductor die, and the plate and the at least one second main lead finger provide a ground supply connection for wire bonding with the semiconductor die.
3. The lead frame of claim 2 , wherein the at least one first main lead finger, the first lead finger bar and the first plurality of lead fingers are included as part of the die paddle.
4. The lead frame of claim 2 , wherein the at least one second main lead finger is included as part of the plate.
5. The lead frame of claim 1 , wherein the at least one first main lead finger and the at least one second main lead finger extend from the die paddle and the plate, respectively, on opposite sides of the perimeter.
6. The lead frame of claim 1 , wherein the plate and the die paddle are substantially similar in size and shape to the semiconductor die for mounting thereon.
7. A lead frame having two layers of material for decoupling a power supply to a semiconductor die attached thereto comprising:
a first lead frame segment including a first body having a perimeter, a first main lead finger depending from the first body, at least one first lead finger bar depending solely from the first main lead finger and supporting a first plurality of lead fingers extending from the at least one first lead finger bar adjacent a first portion of the perimeter;
a second body;
a second lead frame segment including at least one second lead finger bar supporting a second plurality of lead fingers extending from the at least one second lead finger bar adjacent one of the first body and the second body;
a second main lead finger depending from the second body;
a dielectric material disposed in contact with the first body and the second body, the dielectric material being selected from a group consisting of a polyimide and an adhesive tape; and
a semiconductor die attached to the first body having wire bonds to the first and second pluralities of lead fingers and the first and second main lead fingers.
8. The lead frame of claim 7 , wherein the first body and the first main lead finger provide a power supply connection for wire bonding with the semiconductor die, and the second body and the second main lead finger provide a ground supply connection for wire bonding with the semiconductor die.
9. The lead frame of claim 7 , wherein the first main lead finger, the at least one first lead finger bar and the first plurality of lead fingers are formed as part of the first body.
10. The lead frame of claim 7 , wherein the first main lead finger and the second main lead finger extend from the first body and the second body, respectively, on opposite sides of the perimeter of the first body.
11. The lead frame of claim 7 , wherein the first body and the second body are substantially similar in size and shape to the semiconductor die.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/306,670 US6707136B2 (en) | 1996-09-04 | 2002-11-27 | Multi-layer lead frame for a semiconductor device |
Applications Claiming Priority (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US71166896A | 1996-09-04 | 1996-09-04 | |
US08/811,343 US5734198A (en) | 1994-11-10 | 1997-03-04 | Multi-layer lead frame for a semiconductor device |
US09/002,161 US5965936A (en) | 1997-12-31 | 1997-12-31 | Multi-layer lead frame for a semiconductor device |
US09/371,681 US6124630A (en) | 1994-11-10 | 1999-08-10 | Multi-layer lead frame for a semiconductor device |
US09/633,415 US6307255B1 (en) | 1994-11-10 | 2000-08-07 | Multi-layer lead frame for a semiconductor device |
US09/941,020 US6515353B2 (en) | 1996-09-04 | 2001-08-28 | Multi-layer lead frame for a semiconductor device |
US10/306,670 US6707136B2 (en) | 1996-09-04 | 2002-11-27 | Multi-layer lead frame for a semiconductor device |
Related Parent Applications (1)
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US09/941,020 Continuation US6515353B2 (en) | 1996-09-04 | 2001-08-28 | Multi-layer lead frame for a semiconductor device |
Publications (2)
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US20030075782A1 US20030075782A1 (en) | 2003-04-24 |
US6707136B2 true US6707136B2 (en) | 2004-03-16 |
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Application Number | Title | Priority Date | Filing Date |
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US09/002,161 Expired - Lifetime US5965936A (en) | 1994-11-10 | 1997-12-31 | Multi-layer lead frame for a semiconductor device |
US09/371,681 Expired - Lifetime US6124630A (en) | 1994-11-10 | 1999-08-10 | Multi-layer lead frame for a semiconductor device |
US09/633,415 Expired - Fee Related US6307255B1 (en) | 1994-11-10 | 2000-08-07 | Multi-layer lead frame for a semiconductor device |
US09/941,020 Expired - Lifetime US6515353B2 (en) | 1996-09-04 | 2001-08-28 | Multi-layer lead frame for a semiconductor device |
US10/306,670 Expired - Fee Related US6707136B2 (en) | 1996-09-04 | 2002-11-27 | Multi-layer lead frame for a semiconductor device |
Family Applications Before (4)
Application Number | Title | Priority Date | Filing Date |
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US09/002,161 Expired - Lifetime US5965936A (en) | 1994-11-10 | 1997-12-31 | Multi-layer lead frame for a semiconductor device |
US09/371,681 Expired - Lifetime US6124630A (en) | 1994-11-10 | 1999-08-10 | Multi-layer lead frame for a semiconductor device |
US09/633,415 Expired - Fee Related US6307255B1 (en) | 1994-11-10 | 2000-08-07 | Multi-layer lead frame for a semiconductor device |
US09/941,020 Expired - Lifetime US6515353B2 (en) | 1996-09-04 | 2001-08-28 | Multi-layer lead frame for a semiconductor device |
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Cited By (1)
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US20060267184A1 (en) * | 1997-07-02 | 2006-11-30 | Kinsman Larry D | Varied-thickness heat sink for integrated circuit (IC) package |
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Citations (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4410905A (en) | 1981-08-14 | 1983-10-18 | Amp Incorporated | Power, ground and decoupling structure for chip carriers |
US4680613A (en) | 1983-12-01 | 1987-07-14 | Fairchild Semiconductor Corporation | Low impedance package for integrated circuit die |
DE3626151A1 (en) | 1986-08-01 | 1988-02-04 | Siemens Ag | Voltage supply for an integrated semiconductor circuit |
JPS6393139A (en) | 1986-10-07 | 1988-04-23 | Nec Corp | Semiconductor integrated circuit device |
US4891687A (en) | 1987-01-12 | 1990-01-02 | Intel Corporation | Multi-layer molded plastic IC package |
US4965654A (en) | 1989-10-30 | 1990-10-23 | International Business Machines Corporation | Semiconductor package with ground plane |
US4984059A (en) | 1982-10-08 | 1991-01-08 | Fujitsu Limited | Semiconductor device and a method for fabricating the same |
US4994936A (en) | 1990-02-12 | 1991-02-19 | Rogers Corporation | Molded integrated circuit package incorporating decoupling capacitor |
US5032895A (en) | 1989-04-27 | 1991-07-16 | Hitachi, Ltd. | Semiconductor device and method of producing the same |
JPH03165549A (en) | 1989-11-25 | 1991-07-17 | Seiko Epson Corp | Semiconductor integrated circuit device |
JPH03276747A (en) | 1990-03-27 | 1991-12-06 | Nec Corp | Lead frame |
US5095402A (en) | 1990-10-02 | 1992-03-10 | Rogers Corporation | Internally decoupled integrated circuit package |
US5103283A (en) | 1989-01-17 | 1992-04-07 | Hite Larry R | Packaged integrated circuit with in-cavity decoupling capacitors |
US5105257A (en) | 1990-08-08 | 1992-04-14 | Mitsubishi Denki Kabushiki Kaisha | Packaged semiconductor device and semiconductor device packaging element |
JPH04162657A (en) | 1990-10-26 | 1992-06-08 | Hitachi Ltd | Lead frame for semiconductor device |
JPH04188759A (en) | 1990-11-21 | 1992-07-07 | Mitsubishi Electric Corp | Semiconductor integrated circuit device |
US5140496A (en) | 1991-01-02 | 1992-08-18 | Honeywell, Inc. | Direct microcircuit decoupling |
US5200364A (en) | 1990-01-26 | 1993-04-06 | Texas Instruments Incorporated | Packaged integrated circuit with encapsulated electronic devices |
US5212402A (en) | 1992-02-14 | 1993-05-18 | Motorola, Inc. | Semiconductor device with integral decoupling capacitor |
US5235209A (en) | 1990-09-04 | 1993-08-10 | Shinko Electric Industries Co., Ltd. | Multi-layer lead frame for a semiconductor device with contact geometry |
US5237202A (en) | 1989-10-16 | 1993-08-17 | Shinko Electric Industries Co., Ltd | Lead frame and semiconductor device using same |
US5281556A (en) | 1990-05-18 | 1994-01-25 | Shinko Electric Industries Co., Ltd. | Process for manufacturing a multi-layer lead frame having a ground plane and a power supply plane |
JPH0645504A (en) | 1992-07-21 | 1994-02-18 | Miyazaki Oki Electric Co Ltd | Semiconductor device |
US5291060A (en) | 1989-10-16 | 1994-03-01 | Shinko Electric Industries Co., Ltd. | Lead frame and semiconductor device using same |
US5311056A (en) | 1988-10-21 | 1994-05-10 | Shinko Electric Industries Co., Ltd. | Semiconductor device having a bi-level leadframe |
US5365106A (en) | 1992-10-27 | 1994-11-15 | Kabushiki Kaisha Toshiba | Resin mold semiconductor device |
US5734198A (en) | 1994-11-10 | 1998-03-31 | Micron Technology, Inc. | Multi-layer lead frame for a semiconductor device |
US6124630A (en) | 1994-11-10 | 2000-09-26 | Micron Technology, Inc. | Multi-layer lead frame for a semiconductor device |
US6150715A (en) | 1997-08-05 | 2000-11-21 | Nec Corporation | Semiconductor device with radiation plate for high radiation character and method of manufacturing the same |
US6153924A (en) | 1998-02-23 | 2000-11-28 | Micron Technology, Inc. | Multilayered lead frame for semiconductor package |
-
1997
- 1997-12-31 US US09/002,161 patent/US5965936A/en not_active Expired - Lifetime
-
1999
- 1999-08-10 US US09/371,681 patent/US6124630A/en not_active Expired - Lifetime
-
2000
- 2000-08-07 US US09/633,415 patent/US6307255B1/en not_active Expired - Fee Related
-
2001
- 2001-08-28 US US09/941,020 patent/US6515353B2/en not_active Expired - Lifetime
-
2002
- 2002-11-27 US US10/306,670 patent/US6707136B2/en not_active Expired - Fee Related
Patent Citations (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4410905A (en) | 1981-08-14 | 1983-10-18 | Amp Incorporated | Power, ground and decoupling structure for chip carriers |
US4984059A (en) | 1982-10-08 | 1991-01-08 | Fujitsu Limited | Semiconductor device and a method for fabricating the same |
US4680613A (en) | 1983-12-01 | 1987-07-14 | Fairchild Semiconductor Corporation | Low impedance package for integrated circuit die |
DE3626151A1 (en) | 1986-08-01 | 1988-02-04 | Siemens Ag | Voltage supply for an integrated semiconductor circuit |
JPS6393139A (en) | 1986-10-07 | 1988-04-23 | Nec Corp | Semiconductor integrated circuit device |
US4891687A (en) | 1987-01-12 | 1990-01-02 | Intel Corporation | Multi-layer molded plastic IC package |
US5311056A (en) | 1988-10-21 | 1994-05-10 | Shinko Electric Industries Co., Ltd. | Semiconductor device having a bi-level leadframe |
US5103283A (en) | 1989-01-17 | 1992-04-07 | Hite Larry R | Packaged integrated circuit with in-cavity decoupling capacitors |
US5032895A (en) | 1989-04-27 | 1991-07-16 | Hitachi, Ltd. | Semiconductor device and method of producing the same |
US5291060A (en) | 1989-10-16 | 1994-03-01 | Shinko Electric Industries Co., Ltd. | Lead frame and semiconductor device using same |
US5237202A (en) | 1989-10-16 | 1993-08-17 | Shinko Electric Industries Co., Ltd | Lead frame and semiconductor device using same |
US4965654A (en) | 1989-10-30 | 1990-10-23 | International Business Machines Corporation | Semiconductor package with ground plane |
JPH03165549A (en) | 1989-11-25 | 1991-07-17 | Seiko Epson Corp | Semiconductor integrated circuit device |
US5200364A (en) | 1990-01-26 | 1993-04-06 | Texas Instruments Incorporated | Packaged integrated circuit with encapsulated electronic devices |
US4994936A (en) | 1990-02-12 | 1991-02-19 | Rogers Corporation | Molded integrated circuit package incorporating decoupling capacitor |
JPH03276747A (en) | 1990-03-27 | 1991-12-06 | Nec Corp | Lead frame |
US5281556A (en) | 1990-05-18 | 1994-01-25 | Shinko Electric Industries Co., Ltd. | Process for manufacturing a multi-layer lead frame having a ground plane and a power supply plane |
US5105257A (en) | 1990-08-08 | 1992-04-14 | Mitsubishi Denki Kabushiki Kaisha | Packaged semiconductor device and semiconductor device packaging element |
US5235209A (en) | 1990-09-04 | 1993-08-10 | Shinko Electric Industries Co., Ltd. | Multi-layer lead frame for a semiconductor device with contact geometry |
US5095402A (en) | 1990-10-02 | 1992-03-10 | Rogers Corporation | Internally decoupled integrated circuit package |
JPH04162657A (en) | 1990-10-26 | 1992-06-08 | Hitachi Ltd | Lead frame for semiconductor device |
JPH04188759A (en) | 1990-11-21 | 1992-07-07 | Mitsubishi Electric Corp | Semiconductor integrated circuit device |
US5140496A (en) | 1991-01-02 | 1992-08-18 | Honeywell, Inc. | Direct microcircuit decoupling |
US5212402A (en) | 1992-02-14 | 1993-05-18 | Motorola, Inc. | Semiconductor device with integral decoupling capacitor |
JPH0645504A (en) | 1992-07-21 | 1994-02-18 | Miyazaki Oki Electric Co Ltd | Semiconductor device |
US5365106A (en) | 1992-10-27 | 1994-11-15 | Kabushiki Kaisha Toshiba | Resin mold semiconductor device |
US5734198A (en) | 1994-11-10 | 1998-03-31 | Micron Technology, Inc. | Multi-layer lead frame for a semiconductor device |
US6124630A (en) | 1994-11-10 | 2000-09-26 | Micron Technology, Inc. | Multi-layer lead frame for a semiconductor device |
US6307255B1 (en) | 1994-11-10 | 2001-10-23 | Micron Technology, Inc. | Multi-layer lead frame for a semiconductor device |
US6150715A (en) | 1997-08-05 | 2000-11-21 | Nec Corporation | Semiconductor device with radiation plate for high radiation character and method of manufacturing the same |
US6153924A (en) | 1998-02-23 | 2000-11-28 | Micron Technology, Inc. | Multilayered lead frame for semiconductor package |
Non-Patent Citations (1)
Title |
---|
Hyperquad Series Type 5, Three Metal Layer QFP (TM QFP), 2 pages. |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060267184A1 (en) * | 1997-07-02 | 2006-11-30 | Kinsman Larry D | Varied-thickness heat sink for integrated circuit (IC) package |
Also Published As
Publication number | Publication date |
---|---|
US20030075782A1 (en) | 2003-04-24 |
US6515353B2 (en) | 2003-02-04 |
US20020024857A1 (en) | 2002-02-28 |
US6124630A (en) | 2000-09-26 |
US5965936A (en) | 1999-10-12 |
US6307255B1 (en) | 2001-10-23 |
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