US6642549B2 - Method of forming a window for a gallium nitride light emitting diode - Google Patents
Method of forming a window for a gallium nitride light emitting diode Download PDFInfo
- Publication number
- US6642549B2 US6642549B2 US10/197,614 US19761402A US6642549B2 US 6642549 B2 US6642549 B2 US 6642549B2 US 19761402 A US19761402 A US 19761402A US 6642549 B2 US6642549 B2 US 6642549B2
- Authority
- US
- United States
- Prior art keywords
- layer
- forming
- window
- electrode
- current spreading
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
Definitions
- the present invention relates to an improved window for a gallium nitride (GaN)-based light-emitting diode (LED).
- GaN gallium nitride
- LED light-emitting diode
- a semiconductor light-emitting diode includes a substrate, a light emitting region, a window structure, and a pair of electrodes for powering the diode.
- the substrate may be opaque or transparent.
- Light-emitting diodes which are based on gallium nitride (GaN) compounds generally include a transparent, insulating substrate, i.e., a sapphire substrate. With a transparent substrate, light may be utilized from either the substrate or from the opposite end of the LED which is termed the “window”.
- the thin NiO x /Au layer provides an excellent ohmic connection to both the amorphous current spreading conducting layer and to the magnesium (Mg)-doped GaN window layer.
- the highly conductive amorphous layer efficiently spreads current flowing between the electrodes across the light-emitting region to improve the efficiency of the device.
- the FIGURE is a schematic depicting a cross-sectional view of an LED according to one embodiment consistent with the present invention.
- the FIGURE depicts an LED according to one embodiment consistent with the present invention, as a GaN-based device in which light exits through window 109 .
- the LED of the FIGURE includes a sapphire substrate 101 , buffer region 102 , GaN substitute substrate layer 103 , n cladding layer 104 , active region 106 , p cladding layer 107 , window layers 108 , 109 , n electrode 105 , and a window structure which includes a thin NiO x /Au semi-transparent layer 110 , a semi-transparent amorphous conducting layer 111 , a titanium electrode 112 , and a bond pad 113 .
- Layers 101 through 104 , and layers 106 through 109 are grown in a Metal Organic Chemical Vapor Deposition (MOCVD) reactor.
- MOCVD Metal Organic Chemical Vapor Deposition
- the remaining components of the illustrative LED namely, layers NiO x /Au layer 110 , amorphous conducting layer 111 , n electrode 105 , p electrode 112 , and bond pad 113 , are formed by evaporation in an apparatus other than a MOCVD reactor. Such processes are well known in the semiconductor industry and are not described herein.
- the illustrative light-emitting structure of the FIGURE includes an n cladding layer 104 , active region 106 , and p cladding layer 107 .
- the n cladding layer 104 is formed of silicon-doped GaN.
- active region 106 is a silicon-doped n-type gallium indium nitridie/gallium nitride (GaInN/GaN) multi-quantum well (MQW) structure.
- GaInN/GaN gallium indium nitridie/gallium nitride
- MQW multi-quantum well
- the p cladding layer 107 is formed of Mg-doped aluminum gallium nitride (AlGaN).
- the first window layer 108 is formed of Mg-doped GaN.
- the window layer 108 has a nominal thickness of 300 nm.
- the second window layer 109 is similarly formed of Mg-doped GaN. However, window layer 109 is more highly doped to permit an ohmic contact between layer 109 and the very thin NiO x /Au layer 110 .
- the ambient gas of the reactor is switched from H 2 to nitrogen (N 2 ) immediately after completion of the LED structure;
- the reactor temperature is ramped down from the growth temperature to about 900 degrees C. in about 2 minutes;
- the reactor temperature is further ramped down to about 750 degrees C. in about 2 minutes;
- a temperature of about 750 degrees C. is held for about 20 minutes;
- the resulting product exhibits the expected desired physical and electrical characteristics.
- FIGURE illustrates the locations of both p electrode layers 111 , 112 and n electrode 105 .
- Layer 110 is a very thin, semi-transparent contact layer of NiO x /Au which is deposited over the entire exposed face of window layer 109 . Opening 114 is formed in layers 10 and 111 to permit the deposit of a titanium adhesion layer 112 to contact window layer 109 . Titanium forms a strong physical bond with layer 109 and thus tends to eliminate peeling during wire bonding. In addition to reaching through to layer 109 , titanium structure 112 is deposited through and on top of amorphous layer 111 . Titanium electrode 112 forms ohmic contacts with layers 110 and 111 , and forms a Schottky diode contact with window layer 109 . The Schottky diode connection to window layer 109 eliminates the current path directly under the electrode and forces current flowing between the electrodes into conducting layer 111 .
- the p electrode Au bond pad 113 is deposited on top of titanium layer 112 to form an ohmic contact.
- Ni/Au layer 111 and the Ti and Au contact structures are heated in an atmosphere of molecular nitrogen and air.
- the Ni is converted to a form of nickel oxide.
- the described heat treatment improves the quality of the contact structures.
Abstract
Description
Claims (14)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/197,614 US6642549B2 (en) | 2000-07-26 | 2002-07-15 | Method of forming a window for a gallium nitride light emitting diode |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/626,445 US6420736B1 (en) | 2000-07-26 | 2000-07-26 | Window for gallium nitride light emitting diode |
US10/197,614 US6642549B2 (en) | 2000-07-26 | 2002-07-15 | Method of forming a window for a gallium nitride light emitting diode |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/626,445 Continuation US6420736B1 (en) | 2000-07-26 | 2000-07-26 | Window for gallium nitride light emitting diode |
Publications (2)
Publication Number | Publication Date |
---|---|
US20030010994A1 US20030010994A1 (en) | 2003-01-16 |
US6642549B2 true US6642549B2 (en) | 2003-11-04 |
Family
ID=24510400
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/626,445 Ceased US6420736B1 (en) | 2000-07-26 | 2000-07-26 | Window for gallium nitride light emitting diode |
US10/197,614 Expired - Lifetime US6642549B2 (en) | 2000-07-26 | 2002-07-15 | Method of forming a window for a gallium nitride light emitting diode |
US12/662,196 Expired - Lifetime USRE42636E1 (en) | 2000-07-26 | 2010-04-05 | Window for gallium nitride light emitting diode |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/626,445 Ceased US6420736B1 (en) | 2000-07-26 | 2000-07-26 | Window for gallium nitride light emitting diode |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/662,196 Expired - Lifetime USRE42636E1 (en) | 2000-07-26 | 2010-04-05 | Window for gallium nitride light emitting diode |
Country Status (8)
Country | Link |
---|---|
US (3) | US6420736B1 (en) |
EP (1) | EP1320894B1 (en) |
AT (1) | ATE482473T1 (en) |
AU (1) | AU2001277152A1 (en) |
CA (1) | CA2412416C (en) |
DE (1) | DE60143120D1 (en) |
ES (1) | ES2350422T3 (en) |
WO (1) | WO2002009185A1 (en) |
Cited By (5)
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US20050139825A1 (en) * | 2003-12-24 | 2005-06-30 | Samsung Electronics Co., Ltd. | Nitride light emitting device and manufacturing method thereof |
US20070200129A1 (en) * | 2004-04-28 | 2007-08-30 | Showa Denko K.K. | Transparent Positive Electrode |
US7358539B2 (en) * | 2003-04-09 | 2008-04-15 | Lumination Llc | Flip-chip light emitting diode with indium-tin-oxide based reflecting contacts |
US20080299687A1 (en) * | 2003-12-22 | 2008-12-04 | Samsung Electronics Co., Ltd. | Top-emitting nitride-based light emitting device and method of manufacturing the same |
EP2259344A2 (en) * | 2008-03-24 | 2010-12-08 | June O. Song | Light emitting device and manufacturing method for same |
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US7881359B2 (en) * | 1999-04-23 | 2011-02-01 | The Furukawa Electric Co., Ltd | Surface-emission semiconductor laser device |
JP2000307190A (en) | 1999-04-23 | 2000-11-02 | Furukawa Electric Co Ltd:The | Manufacture of surface emitting semiconductor laser |
US7368316B2 (en) * | 1999-04-23 | 2008-05-06 | The Furukawa Electric Co., Ltd. | Surface-emission semiconductor laser device |
US6420736B1 (en) * | 2000-07-26 | 2002-07-16 | Axt, Inc. | Window for gallium nitride light emitting diode |
US6888171B2 (en) * | 2000-12-22 | 2005-05-03 | Dallan Luming Science & Technology Group Co., Ltd. | Light emitting diode |
JP3812827B2 (en) * | 2001-08-23 | 2006-08-23 | ソニー株式会社 | Mounting method of light emitting element |
US6730941B2 (en) * | 2002-01-30 | 2004-05-04 | Showa Denko Kabushiki Kaisha | Boron phosphide-based semiconductor light-emitting device, production method thereof, and light-emitting diode |
US6919585B2 (en) | 2002-05-17 | 2005-07-19 | Lumei Optoelectronics, Inc. | Light-emitting diode with silicon carbide substrate |
TW200400608A (en) * | 2002-06-17 | 2004-01-01 | Kopin Corp | Bonding pad for gallium nitride-based light-emitting device |
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US6835964B2 (en) * | 2003-05-28 | 2004-12-28 | Mu-Jen Lai | GaN-based composition semiconductor light-emitting element and its window layer structure |
US7402841B2 (en) * | 2003-09-22 | 2008-07-22 | Showa Denko K.K. | Gallium nitride-based compound semiconductor light-emitting device and electrode for the same |
US7880176B2 (en) * | 2004-07-23 | 2011-02-01 | Samsung Led Co., Ltd. | Top-emitting light emitting diodes and methods of manufacturing thereof |
US7341932B2 (en) * | 2005-09-30 | 2008-03-11 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Schottky barrier diode and method thereof |
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KR101018227B1 (en) | 2008-10-09 | 2011-02-28 | 삼성엘이디 주식회사 | Vertically structured nitridetype light emitting diode and method of the same |
KR20100055750A (en) * | 2008-11-18 | 2010-05-27 | 엘지이노텍 주식회사 | Semiconductor light emitting device and fabrication method thereof |
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CN105633236B (en) * | 2016-01-06 | 2019-04-05 | 厦门市三安光电科技有限公司 | Light emitting diode and preparation method thereof |
JP7137070B2 (en) * | 2018-12-03 | 2022-09-14 | 日本電信電話株式会社 | Manufacturing method of nitride semiconductor photoelectrode |
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US6420736B1 (en) * | 2000-07-26 | 2002-07-16 | Axt, Inc. | Window for gallium nitride light emitting diode |
US6420732B1 (en) * | 2000-06-26 | 2002-07-16 | Luxnet Corporation | Light emitting diode of improved current blocking and light extraction structure |
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JP3746569B2 (en) * | 1996-06-21 | 2006-02-15 | ローム株式会社 | Light emitting semiconductor device |
-
2000
- 2000-07-26 US US09/626,445 patent/US6420736B1/en not_active Ceased
-
2001
- 2001-07-25 EP EP01954938A patent/EP1320894B1/en not_active Expired - Lifetime
- 2001-07-25 CA CA002412416A patent/CA2412416C/en not_active Expired - Lifetime
- 2001-07-25 DE DE60143120T patent/DE60143120D1/en not_active Expired - Lifetime
- 2001-07-25 AT AT01954938T patent/ATE482473T1/en active
- 2001-07-25 WO PCT/US2001/023346 patent/WO2002009185A1/en active Application Filing
- 2001-07-25 ES ES01954938T patent/ES2350422T3/en not_active Expired - Lifetime
- 2001-07-25 AU AU2001277152A patent/AU2001277152A1/en not_active Abandoned
-
2002
- 2002-07-15 US US10/197,614 patent/US6642549B2/en not_active Expired - Lifetime
-
2010
- 2010-04-05 US US12/662,196 patent/USRE42636E1/en not_active Expired - Lifetime
Patent Citations (11)
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US5344791A (en) * | 1991-07-05 | 1994-09-06 | Hewlett-Packard Company | Diffusion control of p-n junction location in multilayer heterostructure light emitting devices |
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Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7358539B2 (en) * | 2003-04-09 | 2008-04-15 | Lumination Llc | Flip-chip light emitting diode with indium-tin-oxide based reflecting contacts |
US20080299687A1 (en) * | 2003-12-22 | 2008-12-04 | Samsung Electronics Co., Ltd. | Top-emitting nitride-based light emitting device and method of manufacturing the same |
US7666693B2 (en) * | 2003-12-22 | 2010-02-23 | Samsung Electronics Co., Ltd. | Top-emitting nitride-based light emitting device and method of manufacturing the same |
US7372081B2 (en) * | 2003-12-24 | 2008-05-13 | Samsung Electronics Co., Ltd. | Nitride light emitting device and manufacturing method thereof |
US20080145962A1 (en) * | 2003-12-24 | 2008-06-19 | Samsung Electronics Co., Ltd. | Nitride light emitting device and manufacturing method thereof |
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EP2259344A2 (en) * | 2008-03-24 | 2010-12-08 | June O. Song | Light emitting device and manufacturing method for same |
US20110062467A1 (en) * | 2008-03-24 | 2011-03-17 | Lg Innotek Co., Ltd. | Light emitting device and manufacturing method thereof |
EP2259344A4 (en) * | 2008-03-24 | 2013-09-18 | June O Song | Light emitting device and manufacturing method for same |
US8791480B2 (en) | 2008-03-24 | 2014-07-29 | Lg Innotek Co., Ltd. | Light emitting device and manufacturing method thereof |
Also Published As
Publication number | Publication date |
---|---|
WO2002009185A1 (en) | 2002-01-31 |
ES2350422T3 (en) | 2011-01-21 |
AU2001277152A1 (en) | 2002-02-05 |
US20030010994A1 (en) | 2003-01-16 |
CA2412416A1 (en) | 2002-01-31 |
ATE482473T1 (en) | 2010-10-15 |
DE60143120D1 (en) | 2010-11-04 |
EP1320894B1 (en) | 2010-09-22 |
EP1320894A1 (en) | 2003-06-25 |
EP1320894A4 (en) | 2007-02-14 |
USRE42636E1 (en) | 2011-08-23 |
US6420736B1 (en) | 2002-07-16 |
CA2412416C (en) | 2006-07-04 |
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FPAY | Fee payment |
Year of fee payment: 8 |
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FPAY | Fee payment |
Year of fee payment: 12 |