US6615614B1 - Method for preparing optical waveguide substrate - Google Patents
Method for preparing optical waveguide substrate Download PDFInfo
- Publication number
- US6615614B1 US6615614B1 US09/610,952 US61095200A US6615614B1 US 6615614 B1 US6615614 B1 US 6615614B1 US 61095200 A US61095200 A US 61095200A US 6615614 B1 US6615614 B1 US 6615614B1
- Authority
- US
- United States
- Prior art keywords
- glass layer
- refractive index
- quartz glass
- grooves
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related, expires
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Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/132—Integrated optical circuits characterised by the manufacturing method by deposition of thin films
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
- G02B2006/12038—Glass (SiO2 based materials)
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
- G02B2006/12061—Silicon
Definitions
- This invention relates to a method for preparing an optical waveguide substrate having transparent quartz films on the surface and in the interior, exhibiting improved electrical insulation and optical propagation, and suited for use in optical waveguide devices for optical communication.
- Quartz substrates and silicon substrates are common substrates for use in optical waveguide devices for optical communication.
- the silicon substrates are typically used in the manufacture of semiconductor integrated circuits and characterized by a good heat conductivity and surface amenability to a variety of processes including etching, oxidation and deposition. They are available in large size and at a low cost.
- a glass film is formed on a silicon substrate to a thickness of about 10 to 30 ⁇ m by a flame deposition technique.
- a thermal oxidation method of directly oxidizing a silicon substrate to form a glass film.
- An under clad layer 2 is first formed on a substrate 1 , and a core film 4 is formed thereon.
- the core film 4 is processed to define a waveguide pattern of protrusions 5 , which is designated a core pattern.
- an upper clad glass film 6 is formed thereon. This process produces a buried optical waveguide. This process is herein designated protrusion process.
- FIG. 3 Another process of preparing a similar buried waveguide pattern is disclosed in JP-A 10-197737.
- an under clad layer 2 is formed on a substrate 2 , then processed in accordance with a waveguide pattern to define a recess 3 .
- a core film 4 is formed thereon.
- the core layer 4 is then abraded off until the upper surface of the clad layer 2 is exposed, leaving a core segment 5 as shown in FIG. 3 ( e ).
- a glass film 6 serving as an upper clad layer is then formed to produce a buried optical waveguide. This process is herein designated depression process.
- the depression process has advantages over the protrusion process. Since the optical circuit pattern is formed as recesses by etching, the depression process eliminates thinning of the core pattern during etching which can occur in the protrusion process. Since the core is buried in the under clad during formation of the upper clad, the upper clad applies less stresses to the core than in the protrusion process.
- a flame deposition technique is used to deposit a glass film of about 30 ⁇ m thick. Due to differential thermal expansion between glass and the substrate, a warpage of about 200 ⁇ m can occur on the glass side when the substrate has a diameter of 4 inches. Thereafter, the glass film in warped state is etched to define recesses in accordance with the core pattern. A core film of about 8 ⁇ m thick is deposited and vitrified on the etched surface. The core film is abraded from its upper surface until the core film is separated into segments buried in the recesses. In this process, the formation of the core pattern on the substrate in warped state is followed by the abrasion of the core film.
- An object of the invention is to provide a simple method for effectively preparing an optical waveguide substrate featuring a low loss.
- the invention provides a method for preparing an optical waveguide substrate, comprising the steps of:
- the invention has succeeded in fabricating an optical waveguide substrate in which the under clad layer and the core layer are alternately arranged on the same surface of the substrate.
- the core pattern is not deformed since the core is flanked with the thermally oxidized layer.
- the thermally oxidized layer is a pure quartz layer which minimizes an insertion loss.
- the substrate having alternate under clad and core undergoes minimized warp because the under clad layer is formed by thermal oxidation. This facilitates the abrasion step.
- FIG. 1 illustrates a series of steps for preparing an optical waveguide substrate according to the invention.
- FIG. 2 illustrates a series of steps of a prior art method for preparing an optical waveguide substrate.
- FIG. 3 illustrates a series of steps of another prior art method for preparing an optical waveguide substrate.
- a first step is to form concave grooves 12 in one surface of the silicon substrate 11 in accordance with a pattern corresponding to the desired core pattern.
- This step can be effected by photolithography and etching. Dry etching is the typical etching.
- the spacing between the concave grooves 12 is preferably 20 ⁇ m or less.
- the recessed substrate is heat treated in an oxidizing atmosphere whereby the substrate surface is oxidized preferably to a depth of about 10 to 30 ⁇ m as depicted at 13 in FIG. 1 ( b ).
- This oxidation may be conducted in any of a steam atmosphere, dry oxygen atmosphere, halogen oxidizing atmosphere and nitrogen oxide atmosphere. Desirably, the atmosphere is pressurized to accelerate the rate of oxidation.
- the substrate is expanded in volume by about 50%.
- the pattern must be set somewhat larger than the core pattern with the increment of expansion foreseen.
- the side surfaces of the concave grooves are somewhat rough due to reactive ion etching, some flow occurs during subsequent thermal oxidation so that the side surfaces become flattened at the end of thermal oxidation.
- the recessed substrate as oxidized corresponds to a substrate having a so-called under clad film formed thereon. At this point, the substrate has been oxidized over its entirety including the back surface, which prevents any warp caused by differential thermal expansion between the oxide film and the substrate.
- a quartz core film 14 which is doped with an impurity such as GeO 2 or TiO 2 so as to have a somewhat higher refractive index is deposited so as to fill the concave grooves 12 therewith.
- the core film is also thinly deposited on areas other than the grooves, that is, on the surface of the substrate in order to accommodate the volume shrinkage during vitrification.
- the under clad film used herein is a pure quartz film since it is formed by oxidation of the silicon substrate. This eliminates any concern about the vitrifying temperature of the under clad film when the core film is deposited as mentioned above. No problem arises at a vitrifying temperature of about 1,300° C. There is no risk that the shape of the concave grooves is deformed during vitrification.
- the surface of the resulting structure is abraded off until the substrate is exposed and a flat surface is defined.
- the warpage of the substrate is caused only by the core and is as little as about 20 ⁇ m because there is no warp of the under clad layer.
- abrasion can be conducted by a conventional grinding machine capable of mounting a number of substrates at a time.
- Chemical mechanical polishing (CMP) is also acceptable. Abrasion is preferably continued until the buried portions of the core film are abraded several microns. This results in the substrate in which the core film segments 14 and the under clad film 13 are present on the same substrate surface.
- an over clad film 15 is formed on the substrate, for example, to a thickness of about 20 ⁇ m. Since the over clad film is formed on the flat surface, no attention need be paid to the filling of interstices in the core circuit pattern. This allows for the use of low-temperature techniques known to have a poor filling capability such as evaporation, ion plating, and plasma chemical vapor deposition as well as the flame deposition technique which is usually employed.
- a pattern corresponding to a desired core pattern was formed on a silicon substrate by photolithography and reactive dry etching.
- the width and depth of concave grooves were set with a volume increment of 50% by oxidative expansion incorporated therein. More specifically, when it was desired to obtain concave grooves of 8 ⁇ m wide and 15 ⁇ m deep, the width and depth of concave grooves were set at 12 ⁇ m and 23 ⁇ m, respectively, in the etching step.
- the recessed substrate was oxidized at 1,000° C. in high pressure steam under 0.5 MPa for about 120 hours.
- core glass soot is deposited so as to fill the concave grooves therewith.
- the structure was held in an electric furnace at 1,300° C. for 2 hours, obtaining a core layer.
- GeO 2 or TiO 2 was added to the soot so that the core layer might have a relative index of about 0.3 to 1.5%.
- the glass film on the substrate surface was abraded off by reactive ion etching or chemical mechanical polishing (commonly employed in semiconductor processes) until both the core layer and the clad layer appeared on the same substrate surface.
- the substrate before abrasion had a warpage of about 5 ⁇ m which was extremely small as compared with the core film-bearing substrate prepared by a conventional flame deposition technique having a warpage of 200 ⁇ m.
- glass soot was deposited on the substrate.
- the structure was held in an electric furnace at 1,250° C. for 2 hours, obtaining an over clad layer.
- B 2 O 3 or P 2 O 5 was added to the soot so that the over clad layer might have a lower refractive index than the core layer.
- the buried waveguide substrate thus obtained bore the core pattern without distortion and had minimized warp.
- the over clad layer is a planar layer, it can also be formed by plasma chemical vapor deposition.
- tetraethoxysilane carried by argon was passed from the positive electrode side at a vacuum of not higher than 1 Pa.
- a glass film of 20 ⁇ m thick was formed on the substrate. After the glass film was formed, it was annealed at a temperature of 1,000° C. or higher. An equivalent buried waveguide substrate was obtained.
- an optical waveguide substrate featuring no distortion of the core pattern, little warp, and a low loss can be produced in a simple manner.
Abstract
Description
Claims (14)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11193593A JP2001021744A (en) | 1999-07-07 | 1999-07-07 | Manufacture of optical waveguide substrate |
JP11-193593 | 1999-07-07 |
Publications (1)
Publication Number | Publication Date |
---|---|
US6615614B1 true US6615614B1 (en) | 2003-09-09 |
Family
ID=16310549
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/610,952 Expired - Fee Related US6615614B1 (en) | 1999-07-07 | 2000-07-06 | Method for preparing optical waveguide substrate |
Country Status (3)
Country | Link |
---|---|
US (1) | US6615614B1 (en) |
EP (1) | EP1067410A3 (en) |
JP (1) | JP2001021744A (en) |
Cited By (35)
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---|---|---|---|---|
US20020136518A1 (en) * | 2001-03-21 | 2002-09-26 | Wang Everett X. | Fabrication of optical waveguides for reduction of minimum waveguide spacing |
US20050183946A1 (en) * | 2002-03-16 | 2005-08-25 | Tao Pan | Mode size converter for a planar waveguide |
US20050213916A1 (en) * | 2004-03-26 | 2005-09-29 | Sumitomo Electric Industries, Ltd. | Method of manufacturing optical waveguide device |
US20070058901A1 (en) * | 2005-09-12 | 2007-03-15 | Denso Corporation | Optical device and method for manufacturing the same |
US7469558B2 (en) * | 2001-07-10 | 2008-12-30 | Springworks, Llc | As-deposited planar optical waveguides with low scattering loss and methods for their manufacture |
US7826702B2 (en) | 2002-08-27 | 2010-11-02 | Springworks, Llc | Optically coupling into highly uniform waveguides |
US7838133B2 (en) | 2005-09-02 | 2010-11-23 | Springworks, Llc | Deposition of perovskite and other compound ceramic films for dielectric applications |
US20110136318A1 (en) * | 2009-12-09 | 2011-06-09 | Electronics And Telecommunications Research Institute | Method of manufacturing semiconductor device having optical devices |
US7959769B2 (en) | 2004-12-08 | 2011-06-14 | Infinite Power Solutions, Inc. | Deposition of LiCoO2 |
US7993773B2 (en) | 2002-08-09 | 2011-08-09 | Infinite Power Solutions, Inc. | Electrochemical apparatus with barrier layer protected substrate |
US8021778B2 (en) | 2002-08-09 | 2011-09-20 | Infinite Power Solutions, Inc. | Electrochemical apparatus with barrier layer protected substrate |
US8062708B2 (en) | 2006-09-29 | 2011-11-22 | Infinite Power Solutions, Inc. | Masking of and material constraint for depositing battery layers on flexible substrates |
US8105466B2 (en) | 2002-03-16 | 2012-01-31 | Springworks, Llc | Biased pulse DC reactive sputtering of oxide films |
US8197781B2 (en) | 2006-11-07 | 2012-06-12 | Infinite Power Solutions, Inc. | Sputtering target of Li3PO4 and method for producing same |
US20120171624A1 (en) * | 2008-03-12 | 2012-07-05 | Samsung Electro-Mechanics Co., Ltd. | Printed circuit board for optical waveguide and method of manufacturing the same |
US8236443B2 (en) | 2002-08-09 | 2012-08-07 | Infinite Power Solutions, Inc. | Metal film encapsulation |
US8260203B2 (en) | 2008-09-12 | 2012-09-04 | Infinite Power Solutions, Inc. | Energy device with integral conductive surface for data communication via electromagnetic energy and method thereof |
US8268488B2 (en) | 2007-12-21 | 2012-09-18 | Infinite Power Solutions, Inc. | Thin film electrolyte for thin film batteries |
US8350519B2 (en) | 2008-04-02 | 2013-01-08 | Infinite Power Solutions, Inc | Passive over/under voltage control and protection for energy storage devices associated with energy harvesting |
US8394522B2 (en) | 2002-08-09 | 2013-03-12 | Infinite Power Solutions, Inc. | Robust metal film encapsulation |
US8404376B2 (en) | 2002-08-09 | 2013-03-26 | Infinite Power Solutions, Inc. | Metal film encapsulation |
US8431264B2 (en) | 2002-08-09 | 2013-04-30 | Infinite Power Solutions, Inc. | Hybrid thin-film battery |
US8445130B2 (en) | 2002-08-09 | 2013-05-21 | Infinite Power Solutions, Inc. | Hybrid thin-film battery |
DE102004010907B4 (en) * | 2003-03-06 | 2013-05-29 | Denso Corporation | Optical device with microlens arrangement, and method for its preparation |
US8508193B2 (en) | 2008-10-08 | 2013-08-13 | Infinite Power Solutions, Inc. | Environmentally-powered wireless sensor module |
US8518581B2 (en) | 2008-01-11 | 2013-08-27 | Inifinite Power Solutions, Inc. | Thin film encapsulation for thin film batteries and other devices |
US8599572B2 (en) | 2009-09-01 | 2013-12-03 | Infinite Power Solutions, Inc. | Printed circuit board with integrated thin film battery |
US8636876B2 (en) | 2004-12-08 | 2014-01-28 | R. Ernest Demaray | Deposition of LiCoO2 |
US8728285B2 (en) | 2003-05-23 | 2014-05-20 | Demaray, Llc | Transparent conductive oxides |
US8906523B2 (en) | 2008-08-11 | 2014-12-09 | Infinite Power Solutions, Inc. | Energy device with integral collector surface for electromagnetic energy harvesting and method thereof |
US9334557B2 (en) | 2007-12-21 | 2016-05-10 | Sapurast Research Llc | Method for sputter targets for electrolyte films |
US20160209946A1 (en) * | 2013-10-04 | 2016-07-21 | Nitto Denko Corporation | Input device |
US9634296B2 (en) | 2002-08-09 | 2017-04-25 | Sapurast Research Llc | Thin film battery on an integrated circuit or circuit board and method thereof |
CN110320600A (en) * | 2019-06-17 | 2019-10-11 | 中国科学院微电子研究所 | A kind of optical waveguide and its manufacturing method |
US10680277B2 (en) | 2010-06-07 | 2020-06-09 | Sapurast Research Llc | Rechargeable, high-density electrochemical device |
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US6456765B1 (en) * | 2001-04-30 | 2002-09-24 | Raytheon Company | Apparatus for separating and/or combining optical signals, and methods of making and operating it |
JP2003021741A (en) * | 2001-07-06 | 2003-01-24 | Hitachi Cable Ltd | Manufacturing method for optical waveguide |
US6642151B2 (en) * | 2002-03-06 | 2003-11-04 | Applied Materials, Inc | Techniques for plasma etching silicon-germanium |
US7194176B2 (en) * | 2002-05-29 | 2007-03-20 | Hoya Corporation | Functional optical devices and methods for producing them |
KR101192230B1 (en) | 2008-12-05 | 2012-10-16 | 한국전자통신연구원 | Methods of optical waveguide |
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US5961683A (en) * | 1996-01-12 | 1999-10-05 | Nec Corporation | Method of manufacturing an optical device with a groove accurately formed |
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Family Cites Families (1)
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US5431775A (en) * | 1994-07-29 | 1995-07-11 | Eastman Kodak Company | Method of forming optical light guides through silicon |
-
1999
- 1999-07-07 JP JP11193593A patent/JP2001021744A/en active Pending
-
2000
- 2000-07-06 US US09/610,952 patent/US6615614B1/en not_active Expired - Fee Related
- 2000-07-07 EP EP00305758A patent/EP1067410A3/en not_active Withdrawn
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US7039288B2 (en) * | 2001-03-21 | 2006-05-02 | Intel Corporation | Fabrication of optical waveguides for reduction of minimum waveguide spacing |
US20020136518A1 (en) * | 2001-03-21 | 2002-09-26 | Wang Everett X. | Fabrication of optical waveguides for reduction of minimum waveguide spacing |
US7469558B2 (en) * | 2001-07-10 | 2008-12-30 | Springworks, Llc | As-deposited planar optical waveguides with low scattering loss and methods for their manufacture |
US20050183946A1 (en) * | 2002-03-16 | 2005-08-25 | Tao Pan | Mode size converter for a planar waveguide |
US8105466B2 (en) | 2002-03-16 | 2012-01-31 | Springworks, Llc | Biased pulse DC reactive sputtering of oxide films |
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US20050213916A1 (en) * | 2004-03-26 | 2005-09-29 | Sumitomo Electric Industries, Ltd. | Method of manufacturing optical waveguide device |
US8636876B2 (en) | 2004-12-08 | 2014-01-28 | R. Ernest Demaray | Deposition of LiCoO2 |
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US20070058901A1 (en) * | 2005-09-12 | 2007-03-15 | Denso Corporation | Optical device and method for manufacturing the same |
US7437036B2 (en) * | 2005-09-12 | 2008-10-14 | Denso Corporation | Optical device and method for manufacturing the same |
US8062708B2 (en) | 2006-09-29 | 2011-11-22 | Infinite Power Solutions, Inc. | Masking of and material constraint for depositing battery layers on flexible substrates |
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US9334557B2 (en) | 2007-12-21 | 2016-05-10 | Sapurast Research Llc | Method for sputter targets for electrolyte films |
US8268488B2 (en) | 2007-12-21 | 2012-09-18 | Infinite Power Solutions, Inc. | Thin film electrolyte for thin film batteries |
US9786873B2 (en) | 2008-01-11 | 2017-10-10 | Sapurast Research Llc | Thin film encapsulation for thin film batteries and other devices |
US8518581B2 (en) | 2008-01-11 | 2013-08-27 | Inifinite Power Solutions, Inc. | Thin film encapsulation for thin film batteries and other devices |
US8265445B2 (en) * | 2008-03-12 | 2012-09-11 | Samsung Electro-Mechanics Co., Ltd. | Printed circuit board for optical waveguide and method of manufacturing the same |
US20120171624A1 (en) * | 2008-03-12 | 2012-07-05 | Samsung Electro-Mechanics Co., Ltd. | Printed circuit board for optical waveguide and method of manufacturing the same |
US8350519B2 (en) | 2008-04-02 | 2013-01-08 | Infinite Power Solutions, Inc | Passive over/under voltage control and protection for energy storage devices associated with energy harvesting |
US8906523B2 (en) | 2008-08-11 | 2014-12-09 | Infinite Power Solutions, Inc. | Energy device with integral collector surface for electromagnetic energy harvesting and method thereof |
US8260203B2 (en) | 2008-09-12 | 2012-09-04 | Infinite Power Solutions, Inc. | Energy device with integral conductive surface for data communication via electromagnetic energy and method thereof |
US8508193B2 (en) | 2008-10-08 | 2013-08-13 | Infinite Power Solutions, Inc. | Environmentally-powered wireless sensor module |
US8599572B2 (en) | 2009-09-01 | 2013-12-03 | Infinite Power Solutions, Inc. | Printed circuit board with integrated thin film battery |
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US20110136318A1 (en) * | 2009-12-09 | 2011-06-09 | Electronics And Telecommunications Research Institute | Method of manufacturing semiconductor device having optical devices |
US8394705B2 (en) | 2009-12-09 | 2013-03-12 | Electronics And Telecommunications Research Institute | Method of manufacturing semiconductor device having optical devices |
US10680277B2 (en) | 2010-06-07 | 2020-06-09 | Sapurast Research Llc | Rechargeable, high-density electrochemical device |
US20160209946A1 (en) * | 2013-10-04 | 2016-07-21 | Nitto Denko Corporation | Input device |
CN110320600A (en) * | 2019-06-17 | 2019-10-11 | 中国科学院微电子研究所 | A kind of optical waveguide and its manufacturing method |
Also Published As
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JP2001021744A (en) | 2001-01-26 |
EP1067410A3 (en) | 2001-01-17 |
EP1067410A2 (en) | 2001-01-10 |
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