US6525957B1 - Magnetic memory cell having magnetic flux wrapping around a bit line and method of manufacturing thereof - Google Patents
Magnetic memory cell having magnetic flux wrapping around a bit line and method of manufacturing thereof Download PDFInfo
- Publication number
- US6525957B1 US6525957B1 US10/029,085 US2908501A US6525957B1 US 6525957 B1 US6525957 B1 US 6525957B1 US 2908501 A US2908501 A US 2908501A US 6525957 B1 US6525957 B1 US 6525957B1
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- United States
- Prior art keywords
- state memory
- layer
- magnetic
- current line
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 170
- 230000004907 flux Effects 0.000 title claims abstract description 17
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 238000005253 cladding Methods 0.000 claims description 14
- 230000005294 ferromagnetic effect Effects 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 14
- 239000010410 layer Substances 0.000 description 249
- 239000002356 single layer Substances 0.000 description 11
- 230000005415 magnetization Effects 0.000 description 10
- 239000000758 substrate Substances 0.000 description 9
- 230000008901 benefit Effects 0.000 description 6
- 230000003993 interaction Effects 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000014759 maintenance of location Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 239000003302 ferromagnetic material Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000005381 magnetic domain Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000011038 discontinuous diafiltration by volume reduction Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5607—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using magnetic storage elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1653—Address circuits or decoders
- G11C11/1655—Bit-line or column circuits
Abstract
Description
Claims (31)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/029,085 US6525957B1 (en) | 2001-12-21 | 2001-12-21 | Magnetic memory cell having magnetic flux wrapping around a bit line and method of manufacturing thereof |
AU2002353137A AU2002353137A1 (en) | 2001-12-21 | 2002-12-13 | Magneto-electronic component for high density memory |
CNB028254503A CN100449639C (en) | 2001-12-21 | 2002-12-13 | Magnetoelectric Components for High Density Memory |
PCT/US2002/039839 WO2003056562A1 (en) | 2001-12-21 | 2002-12-13 | Magneto-electronic component for high density memory |
TW091136818A TW200302477A (en) | 2001-12-21 | 2002-12-20 | Magneto-electronic component and method of manufacturing |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/029,085 US6525957B1 (en) | 2001-12-21 | 2001-12-21 | Magnetic memory cell having magnetic flux wrapping around a bit line and method of manufacturing thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
US6525957B1 true US6525957B1 (en) | 2003-02-25 |
Family
ID=21847128
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/029,085 Expired - Fee Related US6525957B1 (en) | 2001-12-21 | 2001-12-21 | Magnetic memory cell having magnetic flux wrapping around a bit line and method of manufacturing thereof |
Country Status (5)
Country | Link |
---|---|
US (1) | US6525957B1 (en) |
CN (1) | CN100449639C (en) |
AU (1) | AU2002353137A1 (en) |
TW (1) | TW200302477A (en) |
WO (1) | WO2003056562A1 (en) |
Cited By (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030137871A1 (en) * | 2001-08-28 | 2003-07-24 | Micron Technology, Inc. | Three terminal magnetic random access memory |
US20040032010A1 (en) * | 2002-08-14 | 2004-02-19 | Kools Jacques Constant Stefan | Amorphous soft magnetic shielding and keeper for MRAM devices |
US6724652B2 (en) * | 2002-05-02 | 2004-04-20 | Micron Technology, Inc. | Low remanence flux concentrator for MRAM devices |
US20040075125A1 (en) * | 2002-10-16 | 2004-04-22 | Yoshiaki Asao | Magnetic random access memory |
US20040160810A1 (en) * | 2003-02-18 | 2004-08-19 | Micron Technology, Inc. | Diffusion barrier for improving the thermal stability of MRAM devices |
US6781174B2 (en) | 2002-06-06 | 2004-08-24 | Micron Technology, Inc. | Magnetoresistive memory device assemblies |
US20040257870A1 (en) * | 2003-06-23 | 2004-12-23 | Anthony Thomas C. | Magnetic memory device |
WO2005015565A1 (en) * | 2003-07-31 | 2005-02-17 | Infineon Technologies Ag | Magnetically lined conductors |
US6867468B2 (en) * | 2002-08-30 | 2005-03-15 | Hewlett-Packard Development Company, L.P. | Magnetic shielding for reducing magnetic interference |
US20050122773A1 (en) * | 2003-04-09 | 2005-06-09 | Deak James G. | Self-aligned, low-ressistance, efficient memory array |
US20050146912A1 (en) * | 2003-12-29 | 2005-07-07 | Deak James G. | Magnetic memory having synthetic antiferromagnetic pinned layer |
US6946698B1 (en) | 2004-04-02 | 2005-09-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | MRAM device having low-k inter-metal dielectric |
US20050213246A1 (en) * | 2004-03-25 | 2005-09-29 | Seagate Technology Llc | Magnetic recording head with clad coil |
US20050259463A1 (en) * | 2004-05-21 | 2005-11-24 | Samsung Electronics Co., Ltd. | Multi-bit magnetic random access memory device |
US20060028862A1 (en) * | 2004-08-03 | 2006-02-09 | Headway Technologies, Inc. | Magnetic random access memory array with proximate read and write lines cladded with magnetic material |
US20060033133A1 (en) * | 2004-08-13 | 2006-02-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | MRAM cell having shared configuration |
US20060092698A1 (en) * | 2004-10-21 | 2006-05-04 | Samsung Electronics Co., Ltd. | Magnetic random access memory devices including magnets adjacent magnetic tunnel junction structures and related methods |
WO2007008280A2 (en) * | 2005-07-12 | 2007-01-18 | Magic Technologies, Inc. | Method of forming super-paramagnetic cladding material on conductive lines of mram devices |
US20160064941A1 (en) * | 2014-08-26 | 2016-03-03 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Method for managing the electricity consumption of an electrical network |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113532257B (en) * | 2020-04-16 | 2023-06-27 | 中国科学院苏州纳米技术与纳米仿生研究所 | Strain sensor and manufacturing method thereof |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5329486A (en) * | 1992-04-24 | 1994-07-12 | Motorola, Inc. | Ferromagnetic memory device |
US5659499A (en) | 1995-11-24 | 1997-08-19 | Motorola | Magnetic memory and method therefor |
WO2000058970A2 (en) | 1999-03-30 | 2000-10-05 | Carnegie Mellon University | Magnetic device and method of forming same |
US6211090B1 (en) * | 2000-03-21 | 2001-04-03 | Motorola, Inc. | Method of fabricating flux concentrating layer for use with magnetoresistive random access memories |
US6475812B2 (en) * | 2001-03-09 | 2002-11-05 | Hewlett Packard Company | Method for fabricating cladding layer in top conductor |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW411471B (en) * | 1997-09-17 | 2000-11-11 | Siemens Ag | Memory-cell device |
US6872993B1 (en) * | 1999-05-25 | 2005-03-29 | Micron Technology, Inc. | Thin film memory device having local and external magnetic shielding |
EP1107329B1 (en) * | 1999-12-10 | 2011-07-06 | Sharp Kabushiki Kaisha | Magnetic tunnel junction device, magnetic memory adopting the same, magnetic memory cell and access method of the same |
US20020055190A1 (en) * | 2000-01-27 | 2002-05-09 | Anthony Thomas C. | Magnetic memory with structures that prevent disruptions to magnetization in sense layer |
US6413788B1 (en) * | 2001-02-28 | 2002-07-02 | Micron Technology, Inc. | Keepers for MRAM electrodes |
US6538920B2 (en) * | 2001-04-02 | 2003-03-25 | Manish Sharma | Cladded read conductor for a pinned-on-the-fly soft reference layer |
-
2001
- 2001-12-21 US US10/029,085 patent/US6525957B1/en not_active Expired - Fee Related
-
2002
- 2002-12-13 AU AU2002353137A patent/AU2002353137A1/en not_active Abandoned
- 2002-12-13 CN CNB028254503A patent/CN100449639C/en not_active Expired - Fee Related
- 2002-12-13 WO PCT/US2002/039839 patent/WO2003056562A1/en not_active Application Discontinuation
- 2002-12-20 TW TW091136818A patent/TW200302477A/en unknown
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5329486A (en) * | 1992-04-24 | 1994-07-12 | Motorola, Inc. | Ferromagnetic memory device |
US5659499A (en) | 1995-11-24 | 1997-08-19 | Motorola | Magnetic memory and method therefor |
WO2000058970A2 (en) | 1999-03-30 | 2000-10-05 | Carnegie Mellon University | Magnetic device and method of forming same |
US6211090B1 (en) * | 2000-03-21 | 2001-04-03 | Motorola, Inc. | Method of fabricating flux concentrating layer for use with magnetoresistive random access memories |
US6475812B2 (en) * | 2001-03-09 | 2002-11-05 | Hewlett Packard Company | Method for fabricating cladding layer in top conductor |
Cited By (50)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6714445B2 (en) | 2001-08-28 | 2004-03-30 | Micron Technology, Inc | Three terminal magnetic random access memory |
US20030137871A1 (en) * | 2001-08-28 | 2003-07-24 | Micron Technology, Inc. | Three terminal magnetic random access memory |
US6833278B2 (en) | 2002-05-02 | 2004-12-21 | Micron Technology, Inc. | Low remanence flux concentrator for MRAM devices |
US7009874B2 (en) | 2002-05-02 | 2006-03-07 | Micron Technology, Inc. | Low remanence flux concentrator for MRAM devices |
US6724652B2 (en) * | 2002-05-02 | 2004-04-20 | Micron Technology, Inc. | Low remanence flux concentrator for MRAM devices |
US20050030786A1 (en) * | 2002-05-02 | 2005-02-10 | Micron Technology, Inc. | Low remanence flux concentrator for MRAM devices |
US6780653B2 (en) | 2002-06-06 | 2004-08-24 | Micron Technology, Inc. | Methods of forming magnetoresistive memory device assemblies |
US6781174B2 (en) | 2002-06-06 | 2004-08-24 | Micron Technology, Inc. | Magnetoresistive memory device assemblies |
US7279762B2 (en) | 2002-06-06 | 2007-10-09 | Micron Technology, Inc. | Magnetoresistive memory device assemblies, and methods of forming magnetoresistive memory device assemblies |
US7038286B2 (en) | 2002-06-06 | 2006-05-02 | Micron Technology, Inc. | Magnetoresistive memory device assemblies |
US20060076635A1 (en) * | 2002-06-06 | 2006-04-13 | Hasan Nejad | Magnetoresistive memory device assemblies, and methods of forming magnetoresistive memory device assemblies |
US20050040453A1 (en) * | 2002-06-06 | 2005-02-24 | Hasan Nejad | Magnetoresistive memory device assemblies |
US20040032010A1 (en) * | 2002-08-14 | 2004-02-19 | Kools Jacques Constant Stefan | Amorphous soft magnetic shielding and keeper for MRAM devices |
US6867468B2 (en) * | 2002-08-30 | 2005-03-15 | Hewlett-Packard Development Company, L.P. | Magnetic shielding for reducing magnetic interference |
US20040075125A1 (en) * | 2002-10-16 | 2004-04-22 | Yoshiaki Asao | Magnetic random access memory |
US6737691B2 (en) * | 2002-10-16 | 2004-05-18 | Kabushiki Kaisha Toshiba | Magnetic random access memory |
US6844204B2 (en) | 2002-10-16 | 2005-01-18 | Kabushiki Kaisha Toshiba | Magnetic random access memory |
US20050087786A1 (en) * | 2002-10-16 | 2005-04-28 | Yoshiaki Asao | Magnetic random access memory |
US7091539B2 (en) * | 2002-10-16 | 2006-08-15 | Kabushiki Kaisha Toshiba | Magnetic random access memory |
US20040217400A1 (en) * | 2002-10-16 | 2004-11-04 | Yoshiaki Asao | Magnetic random access memory |
US7002228B2 (en) | 2003-02-18 | 2006-02-21 | Micron Technology, Inc. | Diffusion barrier for improving the thermal stability of MRAM devices |
US20040160810A1 (en) * | 2003-02-18 | 2004-08-19 | Micron Technology, Inc. | Diffusion barrier for improving the thermal stability of MRAM devices |
US20050122773A1 (en) * | 2003-04-09 | 2005-06-09 | Deak James G. | Self-aligned, low-ressistance, efficient memory array |
US7381573B2 (en) * | 2003-04-09 | 2008-06-03 | Micron Technology, Inc. | Self-aligned, low-resistance, efficient memory array |
US6865107B2 (en) * | 2003-06-23 | 2005-03-08 | Hewlett-Packard Development Company, L.P. | Magnetic memory device |
US20040257870A1 (en) * | 2003-06-23 | 2004-12-23 | Anthony Thomas C. | Magnetic memory device |
WO2005015565A1 (en) * | 2003-07-31 | 2005-02-17 | Infineon Technologies Ag | Magnetically lined conductors |
US7385842B2 (en) | 2003-12-29 | 2008-06-10 | Micron Technology, Inc. | Magnetic memory having synthetic antiferromagnetic pinned layer |
US7072209B2 (en) | 2003-12-29 | 2006-07-04 | Micron Technology, Inc. | Magnetic memory having synthetic antiferromagnetic pinned layer |
US20050146912A1 (en) * | 2003-12-29 | 2005-07-07 | Deak James G. | Magnetic memory having synthetic antiferromagnetic pinned layer |
US20060226458A1 (en) * | 2003-12-29 | 2006-10-12 | Deak James G | Magnetic memory having synthetic antiferromagnetic pinned layer |
US20050213246A1 (en) * | 2004-03-25 | 2005-09-29 | Seagate Technology Llc | Magnetic recording head with clad coil |
US7310202B2 (en) | 2004-03-25 | 2007-12-18 | Seagate Technology Llc | Magnetic recording head with clad coil |
US20050224850A1 (en) * | 2004-04-02 | 2005-10-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Mram device having low-k inter-metal dielectric |
US6946698B1 (en) | 2004-04-02 | 2005-09-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | MRAM device having low-k inter-metal dielectric |
US20050259463A1 (en) * | 2004-05-21 | 2005-11-24 | Samsung Electronics Co., Ltd. | Multi-bit magnetic random access memory device |
US7502248B2 (en) * | 2004-05-21 | 2009-03-10 | Samsung Electronics Co., Ltd. | Multi-bit magnetic random access memory device |
US7881099B2 (en) | 2004-05-21 | 2011-02-01 | Samsung Electronics Co., Ltd. | Multibit magnetic random access memory device |
US20090201720A1 (en) * | 2004-05-21 | 2009-08-13 | Samsung Electronics Co., Ltd. | Multibit magnetic random access memory device |
US20060028862A1 (en) * | 2004-08-03 | 2006-02-09 | Headway Technologies, Inc. | Magnetic random access memory array with proximate read and write lines cladded with magnetic material |
US7132707B2 (en) | 2004-08-03 | 2006-11-07 | Headway Technologies, Inc. | Magnetic random access memory array with proximate read and write lines cladded with magnetic material |
US20060033133A1 (en) * | 2004-08-13 | 2006-02-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | MRAM cell having shared configuration |
US7221584B2 (en) | 2004-08-13 | 2007-05-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | MRAM cell having shared configuration |
US7307874B2 (en) | 2004-10-21 | 2007-12-11 | Samsung Electronics Co., Ltd. | Methods of operating magnetic random access memory devices including magnets adjacent magnetic tunnel junction structures |
US20060092698A1 (en) * | 2004-10-21 | 2006-05-04 | Samsung Electronics Co., Ltd. | Magnetic random access memory devices including magnets adjacent magnetic tunnel junction structures and related methods |
US20080062750A1 (en) * | 2004-10-21 | 2008-03-13 | Samsung Electronics Co., Ltd. | Magnetic random access memory devices including magnets adjacent magnetic tunnel junction structures and related methods |
US7304360B2 (en) | 2005-07-12 | 2007-12-04 | Magic Technologies, Inc. | Method of forming super-paramagnetic cladding material on conductive lines of MRAM devices |
WO2007008280A2 (en) * | 2005-07-12 | 2007-01-18 | Magic Technologies, Inc. | Method of forming super-paramagnetic cladding material on conductive lines of mram devices |
WO2007008280A3 (en) * | 2005-07-12 | 2007-05-03 | Magic Technologies Inc | Method of forming super-paramagnetic cladding material on conductive lines of mram devices |
US20160064941A1 (en) * | 2014-08-26 | 2016-03-03 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Method for managing the electricity consumption of an electrical network |
Also Published As
Publication number | Publication date |
---|---|
CN100449639C (en) | 2009-01-07 |
AU2002353137A1 (en) | 2003-07-15 |
WO2003056562A1 (en) | 2003-07-10 |
TW200302477A (en) | 2003-08-01 |
CN1606782A (en) | 2005-04-13 |
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