US6411494B1 - Distributed capacitor - Google Patents
Distributed capacitor Download PDFInfo
- Publication number
- US6411494B1 US6411494B1 US09/544,550 US54455000A US6411494B1 US 6411494 B1 US6411494 B1 US 6411494B1 US 54455000 A US54455000 A US 54455000A US 6411494 B1 US6411494 B1 US 6411494B1
- Authority
- US
- United States
- Prior art keywords
- layers
- electrode
- openings
- integrated circuit
- ground
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/642—Capacitive arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49822—Multilayer substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0805—Capacitors only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01046—Palladium [Pd]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01068—Erbium [Er]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1515—Shape
- H01L2924/15151—Shape the die mounting substrate comprising an aperture, e.g. for underfilling, outgassing, window type wire connections
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15312—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a pin array, e.g. PGA
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Inorganic Insulating Materials (AREA)
- Oscillators With Electromechanical Resonators (AREA)
- Emergency Protection Circuit Devices (AREA)
Abstract
Description
Inductance | |
Product | (nH) |
14-pin plastic dual in-line package (DIP) | 8 | nH |
68- |
35 | nH |
68-pin surface-mount plastic leaded chip carrier (PLCC) | 7 | nH |
Wire bonded to |
1 | nH |
Solder bump to hybrid substrate | .01 | nH |
Claims (14)
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/544,550 US6411494B1 (en) | 2000-04-06 | 2000-04-06 | Distributed capacitor |
AT01925235T ATE385341T1 (en) | 2000-04-06 | 2001-04-06 | DISTRIBUTED CAPACITY |
AU2001252058A AU2001252058A1 (en) | 2000-04-06 | 2001-04-06 | Distributed capacitor |
EP01925235A EP1273017B1 (en) | 2000-04-06 | 2001-04-06 | Distributed capacitor |
PCT/CA2001/000484 WO2001078093A2 (en) | 2000-04-06 | 2001-04-06 | Distributed capacitor |
CA002443551A CA2443551A1 (en) | 2000-04-06 | 2001-04-06 | Distributed capacitor |
DE60132660T DE60132660T2 (en) | 2000-04-06 | 2001-04-06 | DISTRIBUTED CAPACITY |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/544,550 US6411494B1 (en) | 2000-04-06 | 2000-04-06 | Distributed capacitor |
Publications (1)
Publication Number | Publication Date |
---|---|
US6411494B1 true US6411494B1 (en) | 2002-06-25 |
Family
ID=24172631
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/544,550 Expired - Lifetime US6411494B1 (en) | 2000-04-06 | 2000-04-06 | Distributed capacitor |
Country Status (7)
Country | Link |
---|---|
US (1) | US6411494B1 (en) |
EP (1) | EP1273017B1 (en) |
AT (1) | ATE385341T1 (en) |
AU (1) | AU2001252058A1 (en) |
CA (1) | CA2443551A1 (en) |
DE (1) | DE60132660T2 (en) |
WO (1) | WO2001078093A2 (en) |
Cited By (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2004090981A1 (en) * | 2003-04-07 | 2004-10-21 | Philips Intellectual Property & Standards Gmbh | Electronic packaging structure with integrated distributed decoupling capacitors |
US20050189614A1 (en) * | 2004-02-26 | 2005-09-01 | David Ihme | Configurable integrated circuit capacitor array using via mask layers |
US20050224982A1 (en) * | 2004-04-02 | 2005-10-13 | Kemerling James C | Via configurable architecture for customization of analog circuitry in a semiconductor device |
US20060289917A1 (en) * | 2005-06-27 | 2006-12-28 | Tsuyoshi Fujiwara | Semiconductor device, RF-IC and manufacturing method of the same |
WO2007147147A2 (en) * | 2006-06-16 | 2007-12-21 | Cadence Design Systems, Inc. | Method and apparatus for approximating diagonal lines in placement |
US7334208B1 (en) | 2004-11-09 | 2008-02-19 | Viasic, Inc. | Customization of structured ASIC devices using pre-process extraction of routing information |
US20080265370A1 (en) * | 2007-04-27 | 2008-10-30 | Rohm Co., Ltd. | Semiconductor device |
US20090065813A1 (en) * | 2007-09-06 | 2009-03-12 | Viasic, Inc. | Configuring structured asic fabric using two non-adjacent via layers |
US7538580B2 (en) | 2002-06-19 | 2009-05-26 | Viasic, Inc. | Logic array devices having complex macro-cell architecture and methods facilitating use of same |
US20090230446A1 (en) * | 2008-03-17 | 2009-09-17 | Technology Alliance Group, Inc. | Semiconductor device and bypass capacitor module |
US20100044831A1 (en) * | 2008-08-22 | 2010-02-25 | Stmicroelectronics (Tours) Sas | Multi-layer film capacitor with tapered film sidewalls |
US20100246091A1 (en) * | 2009-03-26 | 2010-09-30 | Tdk Corporation | Thin film capacitor and method of manufacturing the same |
US7813107B1 (en) | 2007-03-15 | 2010-10-12 | Greatbatch Ltd. | Wet tantalum capacitor with multiple anode connections |
DE102009059873A1 (en) * | 2009-12-21 | 2011-06-22 | Epcos Ag, 81669 | Varactor and method of making a varactor |
US20130071555A1 (en) * | 2009-03-31 | 2013-03-21 | Tdk Corporation | Method of manufacturing thin film capacitor and thin film capacitor |
WO2014089521A1 (en) * | 2012-12-07 | 2014-06-12 | Anayas360.Com, Llc | Highly integrated millimeter-wave soc layout techniques |
US20140347772A1 (en) * | 2013-05-23 | 2014-11-27 | Inpaq Technology Co., Ltd. | Over-voltage protection device and method for preparing the same |
US20150093497A1 (en) * | 2003-11-28 | 2015-04-02 | Blackberry Limited | Multi-level thin film capacitor on a ceramic substrate and method of manufacturing the same |
CN104779250A (en) * | 2014-01-10 | 2015-07-15 | 富士通半导体股份有限公司 | Semiconductor device and method of manufacturing the same |
US20150228623A1 (en) * | 2014-02-13 | 2015-08-13 | Jung-Ik Oh | Staircase-shaped connection structures of three-dimensional semiconductor devices and methods of forming the same |
US20150357401A1 (en) * | 2014-06-10 | 2015-12-10 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Multilayer electrical device |
US20160260795A1 (en) * | 2015-03-03 | 2016-09-08 | Renesas Electronics Corporation | Method of manufacturing semiconductor device |
US9698852B2 (en) | 2012-10-30 | 2017-07-04 | Maja Systems, Inc. | Compact and low-power millimeter-wave integrated VCO-up/down-converter with gain-boosting |
US9767962B2 (en) * | 2016-01-22 | 2017-09-19 | Micron Technology, Inc. | Apparatuses, multi-chip modules and capacitive chips |
US9998100B2 (en) | 2015-08-28 | 2018-06-12 | Ampere Computing Llc | Package programmable decoupling capacitor array |
US10153092B2 (en) | 2016-10-11 | 2018-12-11 | Tdk Corporation | Thin-film capacitor |
US10319524B2 (en) | 2016-10-11 | 2019-06-11 | Tdk Corporation | Thin-film capacitor |
TWI677071B (en) * | 2017-01-18 | 2019-11-11 | 日商 Tdk 股份有限公司 | Electronic component mounting package |
US10529495B2 (en) | 2016-10-11 | 2020-01-07 | Tdk Corporation | Thin-film capacitor |
US20210020587A1 (en) * | 2019-06-11 | 2021-01-21 | Skyworks Solutions, Inc. | Moisture barrier for metal insulator metal capacitors and integrated circuit having the same |
CN112652619A (en) * | 2020-12-22 | 2021-04-13 | 长江存储科技有限责任公司 | Gasket and manufacturing method thereof, and packaging structure and manufacturing method thereof |
CN113517401A (en) * | 2021-09-13 | 2021-10-19 | 广州粤芯半导体技术有限公司 | Metal capacitor structure and preparation method thereof |
US11754444B2 (en) | 2021-03-19 | 2023-09-12 | Rockwell Collins, Inc. | Distributed integrate and dump circuit |
US11869725B2 (en) * | 2021-11-30 | 2024-01-09 | Texas Instruments Incorporated | Multi-stacked capacitor |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2367428B (en) * | 2001-12-19 | 2002-10-09 | Zarlink Semiconductor Ltd | Integrated circuit |
DE10260352A1 (en) * | 2002-12-20 | 2004-07-15 | Infineon Technologies Ag | Method of manufacturing a capacitor arrangement and capacitor arrangement |
US20160181233A1 (en) * | 2014-12-23 | 2016-06-23 | Qualcomm Incorporated | Metal-insulator-metal (mim) capacitors arranged in a pattern to reduce inductance, and related methods |
Citations (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3648132A (en) | 1970-04-20 | 1972-03-07 | Illinois Tool Works | Multilayer capacitor and process for adjusting the value thereof |
US4148003A (en) | 1977-07-08 | 1979-04-03 | Globe-Union Inc. | Series feed-through capacitor |
US4419713A (en) | 1981-07-06 | 1983-12-06 | Centre Engineering, Inc. | Multiple electrode series capacitor |
US4470099A (en) | 1982-09-17 | 1984-09-04 | Matsushita Electric Industrial Co., Ltd. | Laminated capacitor |
US4723194A (en) | 1985-09-26 | 1988-02-02 | Mitsubishi Denki Kabushiki Kaisha | Structure of capacitor circuit |
EP0262493A2 (en) | 1986-09-30 | 1988-04-06 | International Business Machines Corporation | Electronic package with distributed decoupling capacitors |
US4789840A (en) | 1986-04-16 | 1988-12-06 | Hewlett-Packard Company | Integrated capacitance structures in microwave finline devices |
US4914546A (en) | 1989-02-03 | 1990-04-03 | Micrel Incorporated | Stacked multi-polysilicon layer capacitor |
US4916576A (en) | 1989-02-27 | 1990-04-10 | Fmtt, Inc. | Matrix capacitor |
US4969032A (en) | 1988-07-18 | 1990-11-06 | Motorola Inc. | Monolithic microwave integrated circuit having vertically stacked components |
JPH0312909A (en) | 1989-06-12 | 1991-01-21 | Matsushita Electric Ind Co Ltd | Film capacitor |
US5040091A (en) | 1989-04-15 | 1991-08-13 | Murata Manufacturing Co., Ltd. | Feed-through capacitor |
JPH04207011A (en) | 1990-11-30 | 1992-07-29 | Toshiba Corp | Thin film capacitor parts |
US5144527A (en) | 1989-08-24 | 1992-09-01 | Murata Manufacturing Co., Ltd. | Multilayer capacitor and method of fabricating the same |
US5177670A (en) | 1991-02-08 | 1993-01-05 | Hitachi, Ltd. | Capacitor-carrying semiconductor module |
US5191510A (en) | 1992-04-29 | 1993-03-02 | Ramtron International Corporation | Use of palladium as an adhesion layer and as an electrode in ferroelectric memory devices |
US5206788A (en) * | 1991-12-12 | 1993-04-27 | Ramtron Corporation | Series ferroelectric capacitor structure for monolithic integrated circuits and method |
JPH0613258A (en) | 1991-12-20 | 1994-01-21 | Matsushita Electric Ind Co Ltd | Forming method for pattern of thin film laminated capacitor |
US5283462A (en) | 1991-11-04 | 1994-02-01 | Motorola, Inc. | Integrated distributed inductive-capacitive network |
JPH06231991A (en) | 1993-02-04 | 1994-08-19 | Matsushita Electric Ind Co Ltd | Method of manufacturing thin film lamination capacitor |
US5367430A (en) | 1992-10-21 | 1994-11-22 | Presidio Components, Inc. | Monolithic multiple capacitor |
JPH06342736A (en) | 1993-06-01 | 1994-12-13 | Tdk Corp | Manufacture of laminated type ceramic chip capacitor |
US5414588A (en) | 1993-09-20 | 1995-05-09 | The Regents Of The University Of California | High performance capacitors using nano-structure multilayer materials fabrication |
US5457598A (en) | 1994-04-08 | 1995-10-10 | Radford; Kenneth C. | High capacitance thin film capacitor |
US5583359A (en) | 1995-03-03 | 1996-12-10 | Northern Telecom Limited | Capacitor structure for an integrated circuit |
US5629655A (en) | 1992-10-27 | 1997-05-13 | Ericsson Inc. | Integrated distributed RC low-pass filters |
US5636099A (en) | 1994-05-31 | 1997-06-03 | Matsushita Electric Industrial Co., Ltd. | Variable capacitor formed by multilayer circuit board |
US5739576A (en) | 1995-10-06 | 1998-04-14 | Micron Technology, Inc. | Integrated chip multilayer decoupling capacitors |
US5745335A (en) * | 1996-06-27 | 1998-04-28 | Gennum Corporation | Multi-layer film capacitor structures and method |
US5786630A (en) | 1996-08-07 | 1998-07-28 | Intel Corporation | Multi-layer C4 flip-chip substrate |
US5789807A (en) * | 1996-10-15 | 1998-08-04 | International Business Machines Corporation | On-chip power distribution for improved decoupling |
US5905627A (en) | 1997-09-10 | 1999-05-18 | Maxwell Energy Products, Inc. | Internally grounded feedthrough filter capacitor |
US6098282A (en) * | 1994-11-21 | 2000-08-08 | International Business Machines Corporation | Laminar stackable circuit board structure with capacitor |
-
2000
- 2000-04-06 US US09/544,550 patent/US6411494B1/en not_active Expired - Lifetime
-
2001
- 2001-04-06 AT AT01925235T patent/ATE385341T1/en not_active IP Right Cessation
- 2001-04-06 WO PCT/CA2001/000484 patent/WO2001078093A2/en active IP Right Grant
- 2001-04-06 EP EP01925235A patent/EP1273017B1/en not_active Expired - Lifetime
- 2001-04-06 CA CA002443551A patent/CA2443551A1/en not_active Abandoned
- 2001-04-06 AU AU2001252058A patent/AU2001252058A1/en not_active Abandoned
- 2001-04-06 DE DE60132660T patent/DE60132660T2/en not_active Expired - Fee Related
Patent Citations (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3648132A (en) | 1970-04-20 | 1972-03-07 | Illinois Tool Works | Multilayer capacitor and process for adjusting the value thereof |
US4148003A (en) | 1977-07-08 | 1979-04-03 | Globe-Union Inc. | Series feed-through capacitor |
US4419713A (en) | 1981-07-06 | 1983-12-06 | Centre Engineering, Inc. | Multiple electrode series capacitor |
US4470099A (en) | 1982-09-17 | 1984-09-04 | Matsushita Electric Industrial Co., Ltd. | Laminated capacitor |
US4723194A (en) | 1985-09-26 | 1988-02-02 | Mitsubishi Denki Kabushiki Kaisha | Structure of capacitor circuit |
US4789840A (en) | 1986-04-16 | 1988-12-06 | Hewlett-Packard Company | Integrated capacitance structures in microwave finline devices |
EP0262493A2 (en) | 1986-09-30 | 1988-04-06 | International Business Machines Corporation | Electronic package with distributed decoupling capacitors |
US4969032A (en) | 1988-07-18 | 1990-11-06 | Motorola Inc. | Monolithic microwave integrated circuit having vertically stacked components |
US4914546A (en) | 1989-02-03 | 1990-04-03 | Micrel Incorporated | Stacked multi-polysilicon layer capacitor |
US4916576A (en) | 1989-02-27 | 1990-04-10 | Fmtt, Inc. | Matrix capacitor |
US5040091A (en) | 1989-04-15 | 1991-08-13 | Murata Manufacturing Co., Ltd. | Feed-through capacitor |
JPH0312909A (en) | 1989-06-12 | 1991-01-21 | Matsushita Electric Ind Co Ltd | Film capacitor |
US5144527A (en) | 1989-08-24 | 1992-09-01 | Murata Manufacturing Co., Ltd. | Multilayer capacitor and method of fabricating the same |
JPH04207011A (en) | 1990-11-30 | 1992-07-29 | Toshiba Corp | Thin film capacitor parts |
US5177670A (en) | 1991-02-08 | 1993-01-05 | Hitachi, Ltd. | Capacitor-carrying semiconductor module |
US5283462A (en) | 1991-11-04 | 1994-02-01 | Motorola, Inc. | Integrated distributed inductive-capacitive network |
US5206788A (en) * | 1991-12-12 | 1993-04-27 | Ramtron Corporation | Series ferroelectric capacitor structure for monolithic integrated circuits and method |
JPH0613258A (en) | 1991-12-20 | 1994-01-21 | Matsushita Electric Ind Co Ltd | Forming method for pattern of thin film laminated capacitor |
US5191510A (en) | 1992-04-29 | 1993-03-02 | Ramtron International Corporation | Use of palladium as an adhesion layer and as an electrode in ferroelectric memory devices |
US5367430A (en) | 1992-10-21 | 1994-11-22 | Presidio Components, Inc. | Monolithic multiple capacitor |
US5629655A (en) | 1992-10-27 | 1997-05-13 | Ericsson Inc. | Integrated distributed RC low-pass filters |
JPH06231991A (en) | 1993-02-04 | 1994-08-19 | Matsushita Electric Ind Co Ltd | Method of manufacturing thin film lamination capacitor |
JPH06342736A (en) | 1993-06-01 | 1994-12-13 | Tdk Corp | Manufacture of laminated type ceramic chip capacitor |
US5414588A (en) | 1993-09-20 | 1995-05-09 | The Regents Of The University Of California | High performance capacitors using nano-structure multilayer materials fabrication |
US5486277A (en) | 1993-09-20 | 1996-01-23 | Regents Of The University Of California | High performance capacitors using nano-structure multilayer materials fabrication |
US5457598A (en) | 1994-04-08 | 1995-10-10 | Radford; Kenneth C. | High capacitance thin film capacitor |
US5636099A (en) | 1994-05-31 | 1997-06-03 | Matsushita Electric Industrial Co., Ltd. | Variable capacitor formed by multilayer circuit board |
US6098282A (en) * | 1994-11-21 | 2000-08-08 | International Business Machines Corporation | Laminar stackable circuit board structure with capacitor |
US5583359A (en) | 1995-03-03 | 1996-12-10 | Northern Telecom Limited | Capacitor structure for an integrated circuit |
US5739576A (en) | 1995-10-06 | 1998-04-14 | Micron Technology, Inc. | Integrated chip multilayer decoupling capacitors |
US5745335A (en) * | 1996-06-27 | 1998-04-28 | Gennum Corporation | Multi-layer film capacitor structures and method |
US5786630A (en) | 1996-08-07 | 1998-07-28 | Intel Corporation | Multi-layer C4 flip-chip substrate |
US5789807A (en) * | 1996-10-15 | 1998-08-04 | International Business Machines Corporation | On-chip power distribution for improved decoupling |
US5905627A (en) | 1997-09-10 | 1999-05-18 | Maxwell Energy Products, Inc. | Internally grounded feedthrough filter capacitor |
Cited By (79)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7930670B2 (en) | 2002-06-19 | 2011-04-19 | Viasic, Inc. | Using selectable in-line inverters to reduce the number of inverters in a semiconductor design |
US20090210848A1 (en) * | 2002-06-19 | 2009-08-20 | Viasic, Inc. | Logic array devices having complex macro-cell architecture and methods facilitating use of same |
US7538580B2 (en) | 2002-06-19 | 2009-05-26 | Viasic, Inc. | Logic array devices having complex macro-cell architecture and methods facilitating use of same |
WO2004090981A1 (en) * | 2003-04-07 | 2004-10-21 | Philips Intellectual Property & Standards Gmbh | Electronic packaging structure with integrated distributed decoupling capacitors |
US20150093497A1 (en) * | 2003-11-28 | 2015-04-02 | Blackberry Limited | Multi-level thin film capacitor on a ceramic substrate and method of manufacturing the same |
US9305709B2 (en) * | 2003-11-28 | 2016-04-05 | Blackberry Limited | Method of forming a multi-level thin film capacitor |
US20080108201A1 (en) * | 2004-02-26 | 2008-05-08 | Triad Semiconductor, Inc. | Configurable Integrated Circuit Capacitor Array Using Via Mask Layers |
US7335966B2 (en) | 2004-02-26 | 2008-02-26 | Triad Semiconductor, Inc. | Configurable integrated circuit capacitor array using via mask layers |
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DE60132660T2 (en) | 2009-01-08 |
EP1273017B1 (en) | 2008-01-30 |
WO2001078093A3 (en) | 2002-03-28 |
ATE385341T1 (en) | 2008-02-15 |
EP1273017A2 (en) | 2003-01-08 |
WO2001078093A2 (en) | 2001-10-18 |
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AU2001252058A1 (en) | 2001-10-23 |
DE60132660D1 (en) | 2008-03-20 |
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