|Publication number||US6333209 B1|
|Application number||US 09/301,569|
|Publication date||25 Dec 2001|
|Filing date||29 Apr 1999|
|Priority date||29 Apr 1999|
|Publication number||09301569, 301569, US 6333209 B1, US 6333209B1, US-B1-6333209, US6333209 B1, US6333209B1|
|Inventors||Patrick A. Coico, James H. Covell, Lewis S. Goldmann, Kimberly A. Kelly|
|Original Assignee||International Business Machines Corporation|
|Export Citation||BiBTeX, EndNote, RefMan|
|Patent Citations (23), Referenced by (26), Classifications (29), Legal Events (5)|
|External Links: USPTO, USPTO Assignment, Espacenet|
The present invention relates to an improved method for producing a chip carrier, which method realizes a savings in time and expense. More particularly, the invention reduces the number of processing steps required to produce a chip carrier (i.e. a batch of carriers) by causing the curing of the encapsulant and/or underfill material to occur simultaneously with the joining of material to the carrier substrate.
The semiconductor device field is highly competitive relative to improvements in chip and carrier performance and to costs associated with their production. Methods for producing such chip carriers which reduced cost are thus constantly sought.
Ball Grid Arrays (BGA's) have become, in recent years, one of the dominant surface mount technologies for electrically interconnecting electronic chip carriers to circuit boards. In a BGA, an areal array of solder balls is attached to the underside of the chip carrier (or substrate) to allow subsequent high density, low impedance interconnection of the substrate to a circuit card.
Although there are several distinct classes of BGA interconnection configurations, two of the prior art classes are directly relevant to the invention. Thus, these two are discussed herein.
A first class of BGA is that which is intended to be used with an organic substrate chip carrier. Organic substrates are tolerant only of lower elevated temperature ranges. Typically with organic substrates the balls are made of a low melt solder such as eutectic lead-tin alloy. Eutectic balls are directly attached to the substrate metalization by reflow of the balls themselves in a reflow furnace. The art commonly refers to such ball arrays as a Plastic Ball Grid Array (PBGA) package.
The second prior art class of BGA is intended for use with a ceramic chip carrier (CBGA) package. In ceramic substrate packages, typically higher temperature melt balls are employed which then are secured to the substrate using a preform or paste. The preform or paste is reflown in a reflow furnace similar to the PBGA balls. In the CBGA package however, the balls themselves do not melt.
In both of these BGA packages an issue that must be considered by the manufacturer and satisfactorily remedied is the attachment of the chip to the carrier or substrate. The reason the attachment is an issue is that there is a thermal mismatch resulting in strain between the chip and the substrate. As one of skill in the art will appreciate, thermal cycling is a repeated process during the life of the product and if unchecked can shorten the life thereof. To help increase the service life of these products, an underfill or encapsulation material has been introduced under the chip around the surrounding joints. The underfill material preferably has properties tailored to absorb strain. Typical materials employed for this purpose are epoxies filled with silica. These types of compositions, while being quite effective for their intended purpose, take significant amounts of time to cure. In fact, cure times can be several hours long. In addition, the curing is undertaken at relatively high temperature. Thus, the processes currently used for preparing packages is expensive both from the standpoint of relatively slow production (time delay for curing) and the cost of providing elevated temperature for a long period of time relative to the number of products produced.
More recently, advances in epoxy resins have developed encapsulation/underfill material with cure rates that are much less time consuming than the earlier encapsulation/underfill materials. Such epoxies cure at temperatures of between about 150° C. to about 230° C. in between about 15 to about 30 minutes. Hysol 4526 is one such composition and is commercially available from Dexter Electronics, Industry California.
Even with faster curing epoxies such as the one identified, time is still lost due to a delay for curing in present processing and the art is in need of a less time consuming processing arrangement.
The invention is a novel method for manufacturing an electronic chip carrier package.
Accordingly it is a purpose of the invention to build a reliable chip carrier.
It is another purpose of the invention to reduce processing time while maintaining quality of the chip carrier package.
Therefore, in one aspect, this invention comprises building an electronic chip carrier by electronically attaching a chip to a substrate and underfilling an area between said chip and said substrate with an encapsulant material. Curing of said encapsulant and/or underfill material is undertaken simultaneously with the reflowing of a conductor material of a eutectic or other low melt material preferably having a melting point of less than 220° C. The reflowing operation functions to electrically connect electrical elements to said substrate. By combining steps and employing fast curing silicon filled epoxies this invention greatly benefits the art.
The features of the invention believed to be novel and the elements characteristic of the invention are set forth with particularity in the appended claims. The drawings are for illustration purposes only and are not drawn to scale. Furthermore, like numbers represent like features in the drawings. The invention itself, however, both as to organization and method of operation, may best be understood by reference to the detailed description which follows taken in conjunction with the accompanying drawings in which:
FIG. 1 is a process flow of a prior art process illustrating both PBGA and CBGA constructions;
FIG. 2 is a process flow of the invention also illustrating both PBGA and CBGA constructions;
FIGS. 3A-3E are sequential schematic views of a PBGA chip carrier in various stages of construction;
FIGS. 4A-4F are sequential schematic views illustrating one processing embodiment for a CBGA chip carrier; and
FIGS. 5A-5B are sequential schematic views illustrating a second processing embodiment for a CBGA chip carrier.
The invention enhances profitability in the manufacture of chip carriers by reducing the cost of producing the same. Costs are reduced by reducing total processing time and therefore reducing the energy required and manpower or machine power required to complete the job.
The inventors of the present invention have developed a process by which a number of independent steps have been combined in a single operation in the invention. Furthermore, it should be understood that this invention is applicable to both underfill and/or encapsulant processes, and as such these terms may be used interchangeably to illustrate the inventive concept. Referring to FIGS. 1 and 2 simultaneously, one of skill in the art will appreciate that the invention avoids step E in the first process and rather combines the function of step E with a joining step in the second process. More specifically, the first process of FIG. 1 includes step E which has the function of curing the underfill material. As has been noted hereinbefore and as is appreciated by one of skill in the art, the curing step requires the application of elevated temperature to the composition in the range of about 150° C. to about 230° C. for an extended period of time. With older silica filled epoxy materials the period of time would generally extend for hours. With newer underfill materials the period has been shortened to less than an hour but still requires some time to cure during which time no other processes are undertaken and a “bottle neck” is created. In the first process, the chip is joined to the substrate material (A) and the unit is flux cleaned (B). Electrical testing (C) may then be conducted if desired prior to continuing assembly of the carrier. Underfill material is applied between the chip and the substrate (D) and it is then cured (E). After the curing step, the cap is attached (see step F). Preferably by employing a silicone elastomer to adhere the cap to the substrate and enclose the chip. The ball attach process is then begun. The particular process used is dependent upon the type of substrate material i.e. organic (PBGA) or ceramic (CBGA). The processes themselves are discussed further hereunder.
In FIG. 1 (and in FIG. 2 for clarity) the process steps are alphanumerically tagged with the first letter “G” corresponding to the ball attach step (G) and the second letter “C” or “P” indicating ceramic or plastic BGA types. The numbers, of course, are merely to distinguish the individual steps.
The individual steps of Ball Attach are easily recognizable to one of ordinary skill in the art. The invention is further concerned with the steps labeled GC-2 and GP-2. In the first process (FIG. 1) these steps are solely for solder join whether that be a reflowing of the Balls themselves (PBGA and organic substrate) or a reflowing of a solder preform or paste with high melt balls (CBGA and ceramic substrate). In the invention on the other hand, steps GC-2 and GP-2 include simultaneous conductor material joining and underfill curing. The reader will also note that the letter “E” in FIG. 2 has been moved in the process. Because E has been moved to coincide temporally with reflow of the joining material (i.e. made a part of GC-2&E or GP-2&E) a significant savings in time for completion of the construction of the chip carrier has been realized.
Pictorially, the invention is illustrated in FIGS. 3A-3E, 4A-4F and 5A-5B. Referring to FIGS. 3A-3E (a PBGA carrier) first a chip 12 is mounted on an organic substrate or chip carrier 14 by a plurality of solder balls 16. This image relates to letters A-C in FIGS. 1 and 2.
FIG. 3B indicates the location of the underfill material by arrow 18 and corresponds to letter D in FIGS. 1 and 2. Steps E and F of FIG. 1 are displaced.
In FIG. 3C the device has been inverted and a solder material 20 is applied which will become the BGA upon reflow. This relates to GP-1 in FIGS. 1 and 2. FIG. 3D illustrates the conductive material balls reflowed to become the PBGA 22 and corresponds to letters GP-2 wherein it will also be understood that the underfill material 18 is cured. Thus, the step of E of the first process is combined with the step GP-2 in the second process.
FIG. 3E illustrates the completed carrier with the cap 24 having been attached in a conventional way.
Referring now to FIGS. 4A-4F a CBGA package is pictorially illustrated and related to the process of FIG. 2. Ceramic substrate 15 is distinct from the organic substrate 14 and thus is assigned a different numeral. Chip 12 and balls 16 however are identical to the previous F embodiment and the figure relates to letters A-C.
FIG. 4B illustrates the underfill location by arrow 18 and relates to letter D in the process flow of FIGS. 1 and 2. As in the FIG. 3 series, the FIG. 4 series now departs from the process flow of FIG. 1 and follows only FIG. 2.
FIG. 4C shows the application of a preform or paste 30 to substrate 15 which corresponds to GC-1.
FIG. 4D illustrates the condition of the preform 30 after reflow during which the underfill is cured. This corresponds to steps GC-2 and GC-3.
FIG. 4E places the high melt balls 36 of the CBGA, joins the balls and cleans corresponding to GC-4-GC-6.
FIG. 4F is an illustration of the cap 38 attachment of step F in FIG. 2. Caps are generally attached with a silicone elastomer such as Dow Corning's Sylgard™577. The material cures at a range of temperature related to the speed of cure. The cure temperature favored for the present invention is about 150° C. The silicone elastomer material is placed, as will be recognized by one of ordinary skill in the art, either on the substrate or on the cap. Pressure is then applied to join the substrate to the cap. In the FIG. 4 embodiment, the cap 38 is attached after the encapsulant/underfill cure. This procedure is preferred where the particular fill material is subject to off-gassing during curing. If the cap were placed first, the gasses would be trapped and could damage the product. Where off-gassing during curing is not an issue however, the process of FIGS. 5A and 5B may be preferred.
Referring to FIGS. 5A and 5B, it should be noted that the initial process of the embodiment is the same as already identified in FIGS. 4A-4D and therefore it will not be separately discussed. FIGS. 5A and 5B illustrate the process where the cap 38 is attached to the substrate prior to the BGA attachment. This sequence of events leads to a well protected chip during the fixturing commonly used for the high melt ball (36) attachment. It will be appreciated by one of skill in the art that silicone chips are extremely fragile and can be damaged in the fixturing process when not protected. Thus where the encapsulant/underfill material does not detrimentally off-gas during curing, this embodiment may be preferred.
While preferred embodiments have been shown and described, various modifications and substitutions may be made thereto without departing from the spirit and scope of the invention. Accordingly, it is to be understood that the present invention has been described by way of illustration and not limitation.
|Cited Patent||Filing date||Publication date||Applicant||Title|
|US3307134||2 Apr 1963||28 Feb 1967||Corning Glass Works||Encapsulated impedance element|
|US3810068||7 May 1973||7 May 1974||Corning Glass Works||Impedance element with magnesium reaction terminal contact and method|
|US4189083||15 Jun 1978||19 Feb 1980||Motorola, Inc.||Low temperature and low cost assembly process for nonlinear resistors|
|US5471027||22 Jul 1994||28 Nov 1995||International Business Machines Corporation||Method for forming chip carrier with a single protective encapsulant|
|US5496769||14 Apr 1994||5 Mar 1996||Commissariat A L'energie Atomique||Process for coating electronic components hybridized by bumps on a substrate|
|US5496775||8 Apr 1994||5 Mar 1996||Micron Semiconductor, Inc.||Semiconductor device having ball-bonded pads|
|US5533256||5 Jun 1995||9 Jul 1996||International Business Machines Corporation||Method for directly joining a chip to a heat sink|
|US5634268||7 Jun 1995||3 Jun 1997||International Business Machines Corporation||Method for making direct chip attach circuit card|
|US5729896||31 Oct 1996||24 Mar 1998||International Business Machines Corporation||Method for attaching a flip chip on flexible circuit carrier using chip with metallic cap on solder|
|US5930598 *||21 Jul 1998||27 Jul 1999||Motorola, Inc.||Microelectronic assembly including a decomposable encapsulant, and method for forming and reworking same|
|US5969461 *||8 Apr 1998||19 Oct 1999||Cts Corporation||Surface acoustic wave device package and method|
|US5985043 *||21 Jul 1997||16 Nov 1999||Miguel Albert Capote||Polymerizable fluxing agents and fluxing adhesive compositions therefrom|
|US5985456 *||9 Sep 1997||16 Nov 1999||Miguel Albert Capote||Carboxyl-containing polyunsaturated fluxing adhesive for attaching integrated circuits|
|US5998242 *||27 Oct 1997||7 Dec 1999||Lsi Logic Corporation||Vacuum assisted underfill process and apparatus for semiconductor package fabrication|
|US6008536 *||23 Jun 1997||28 Dec 1999||Lsi Logic Corporation||Grid array device package including advanced heat transfer mechanisms|
|US6059894 *||8 Apr 1998||9 May 2000||Hewlett-Packard Company||High temperature flip chip joining flux that obviates the cleaning process|
|US6117759 *||3 Jan 1997||12 Sep 2000||Motorola Inc.||Method for multiplexed joining of solder bumps to various substrates during assembly of an integrated circuit package|
|JPH022151A *||Title not available|
|JPH01201931A *||Title not available|
|JPH11204573A *||Title not available|
|JPS63293965A *||Title not available|
|WO1998048449A2 *||21 Apr 1998||29 Oct 1998||Flip Chip Technologies, L.L.C.||Flip chip and chip scale package|
|WO1999004430A1 *||21 Jul 1998||28 Jan 1999||Aguila Technologies, Inc.||Semiconductor flip-chip package and method for the fabrication thereof|
|Citing Patent||Filing date||Publication date||Applicant||Title|
|US6573122 *||26 Mar 2002||3 Jun 2003||International Rectifier Corporation||Wafer level insulation underfill for die attach|
|US6919224 *||30 Sep 2003||19 Jul 2005||Intel Corporation||Modified chip attach process and apparatus|
|US7115998||29 Aug 2002||3 Oct 2006||Micron Technology, Inc.||Multi-component integrated circuit contacts|
|US7304391||27 Jun 2005||4 Dec 2007||Intel Corporation||Modified chip attach process and apparatus|
|US7446028||31 Aug 2005||4 Nov 2008||Micron Technology, Inc.||Multi-component integrated circuit contacts|
|US7579213 *||31 Oct 2007||25 Aug 2009||Intel Corporation||Modified chip attach process|
|US7719120||26 Sep 2006||18 May 2010||Micron Technology, Inc.||Multi-component integrated circuit contacts|
|US7901982||13 Jul 2009||8 Mar 2011||Intel Corporation||Modified chip attach process|
|US7989229||10 Sep 2007||2 Aug 2011||International Business Machines Corporation||Tactile surface inspection during device fabrication or assembly|
|US8268715||23 Apr 2010||18 Sep 2012||Micron Technology, Inc.||Multi-component integrated circuit contacts|
|US8324737||7 Mar 2011||4 Dec 2012||Intel Corporation||Modified chip attach process|
|US9263426 *||9 Jan 2015||16 Feb 2016||Apple Inc.||PoP structure with electrically insulating material between packages|
|US9337162||13 Sep 2012||10 May 2016||Micron Technology, Inc.||Multi-component integrated circuit contacts|
|US20020146861 *||26 Mar 2002||10 Oct 2002||International Rectifier Corp.||Wafer level insulation underfill for die attach|
|US20040043675 *||29 Aug 2002||4 Mar 2004||Micron Technology, Inc.||Multi-component integrated circuit contacts|
|US20050070044 *||30 Sep 2003||31 Mar 2005||Intel Corporation||Modified chip attach process and apparatus|
|US20060001141 *||31 Aug 2005||5 Jan 2006||Micron Technology, Inc.||Multi-component integrated circuit contacts|
|US20060003496 *||27 Jun 2005||5 Jan 2006||Intel Corporation||Modified chip attach process and apparatus|
|US20070018321 *||26 Sep 2006||25 Jan 2007||Micron Technology, Inc.||Multi-component integrated circuit contacts|
|US20080057628 *||31 Oct 2007||6 Mar 2008||Intel Corporation||Modified chip attach process|
|US20090068770 *||10 Sep 2007||12 Mar 2009||International Business Machines Corporation||Tactile surface inspection during device fabrication or assembly|
|US20090275175 *||13 Jul 2009||5 Nov 2009||Sane Sandeep B||Modified chip attach process|
|US20100203721 *||12 Aug 2010||Hiatt William M||Multi-component integrated circuit contacts|
|US20110156254 *||30 Jun 2011||Sane Sandeep B||Modified chip attach process|
|US20150118795 *||9 Jan 2015||30 Apr 2015||Apple Inc.||PoP STRUCTURE WITH ELECTRICALLY INSULATING MATERIAL BETWEEN PACKAGES|
|DE102004055511B3 *||17 Nov 2004||9 Feb 2006||Danfoss Silicon Power Gmbh||Production process for a power semiconductor module forms solder layer between two partner layers then three hard fixing bridges and melts solder to give exact thickness|
|U.S. Classification||438/108, 438/126, 438/124, 257/E21.503|
|Cooperative Classification||H01L2924/15787, H01L2924/0132, H01L2224/29111, H01L2224/13111, H01L2924/0105, H01L2924/01006, H01L2924/3011, H01L24/28, H01L2224/73203, H01L2924/01005, H01L2924/01082, H01L2924/01033, H01L2224/16, H01L2224/83102, H01L2924/01322, H01L2924/16152, H01L2924/15311, H01L2924/01015, H01L21/563, H01L2224/92125, H01L2224/2919, H01L2924/1579|
|European Classification||H01L24/28, H01L21/56F|
|29 Apr 1999||AS||Assignment|
Owner name: INTERNATIONAL BUSINESS MACHINES CORPORATION, NEW Y
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:COICO, PATRICK A.;COVELL, JAMES H.;GOLDMANN, LEWIS S.;AND OTHERS;REEL/FRAME:009926/0792;SIGNING DATES FROM 19990427 TO 19990429
|24 Jan 2005||FPAY||Fee payment|
Year of fee payment: 4
|6 Jul 2009||REMI||Maintenance fee reminder mailed|
|25 Dec 2009||LAPS||Lapse for failure to pay maintenance fees|
|16 Feb 2010||FP||Expired due to failure to pay maintenance fee|
Effective date: 20091225