US5872459A - Method of testing integrated circuits - Google Patents

Method of testing integrated circuits Download PDF

Info

Publication number
US5872459A
US5872459A US07/875,881 US87588192A US5872459A US 5872459 A US5872459 A US 5872459A US 87588192 A US87588192 A US 87588192A US 5872459 A US5872459 A US 5872459A
Authority
US
United States
Prior art keywords
test
test probe
probe
contact pads
another
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US07/875,881
Inventor
John Pasiecznik, Jr.
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DirecTV Group Inc
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Priority to US07/875,881 priority Critical patent/US5872459A/en
Assigned to HUGHES ELECTRONICS CORPORATION reassignment HUGHES ELECTRONICS CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: HE HOLDINGS INC., DBA HUGHES ELECTRONICS, FORMERLY KNOWN AS HUGHES AIRCRAFT COMPANY
Application granted granted Critical
Publication of US5872459A publication Critical patent/US5872459A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02General constructional details
    • G01R1/06Measuring leads; Measuring probes
    • G01R1/067Measuring probes
    • G01R1/073Multiple probes
    • G01R1/07307Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
    • G01R1/0735Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card arranged on a flexible frame or film

Definitions

  • the present invention relates to testing of integrated circuits and more particularly concerns improved test fixtures and probes that readily lend themselves to automated testing and efficient probe manufacture and use.
  • Integrated circuits or chips including conductive traces, electrical components, and active devices are fabricated in batches of large numbers of similar or identical circuits on a single wafer and then individually cut from the wafer for use. Because production techniques and processes are pushed to the limits of accuracy and repeatability, significant numbers are of circuits on a single wafer may be unacceptable or inoperable. Therefore it is desirable to test each circuit individually before it is separated from the other by severing the wafer into its many component circuits for its intended use.
  • Probe cards presently employed for testing of integrated circuits while still on the wafer employ a number of probe contact elements, commonly in the form of very small blades or needles that are mechanically and electrically fixed to a circuit board or the like and have leads that fan out to outer edges of the probe card for making connections between the probe card and testing circuitry.
  • the contact blades or needles of the probe card are moved into contact with specific areas, namely the pads of the integrated circuit or chip under test, and may be electrically connected so as to apply selected input signals and to read output signals from the device under test. In this manner the chips are tested on the wafer, before being connected for intended use, by applying operating signals and monitoring and evaluating resultant outputs.
  • Probe cards presently employed are bulky and complex, being difficult to store and handle. Mechanical contact needles and blades require precise alignment and positioning. They also require precise planarization. That is, the contact surfaces of the probe must all lie in the same plane.
  • An example of such a probe card employing a number of small, thin metal blades having needle like probe members fixed thereto is illustrated in U.S. Pat. No. 4,161,692 of Tarzwell for Probe Device For Integrated Circuit Wafers.
  • the individual probe blades or needles must be mounted individually, frequently by use of micro-manipulators to properly locate the closely packed small probe elements, which then may be soldered or otherwise fixed in place.
  • the probe may have from fifty to several hundred contacts, each of which must be precisely and individually positioned with respect to all others so that upon contact with the circuit chip all probe contacts will contact all pads of the chip under test. All of this means that the probe cards presently used are exceedingly expensive, require much maintenance, and are subject to many errors.
  • test probe described in the above-identified co-pending patent application of Kamensky et al employs photolithographically formed probe contacts and leads to eliminate many of these problems but fails to provide for a number of improvements that are available with the methods and apparatus described herein.
  • disclosure of such co-pending application is incorporated by this reference as though fully set forth herein.
  • a plurality of circuit chips of different configuration are tested by providing a plurality of test probes of which each is configured for testing an unique chip configuration. That is, each test probe is configured for testing one configuration of the circuit chips.
  • the probes are stored in a cassette.
  • a chip to be tested is positioned adjacent a test fixture, and a pick and place machine is employed to selectively extract a chosen test probe from the cassette and move it to the fixture to which it is detachably connected, both mechanically and electrically, to allow the test probe to contact the chip to be tested.
  • a test probe is formed of a flexible membrane having a pattern of electrically conductive traces formed on the membrane, a plurality of contact pads on selected ones of the traces, and connector pads on the membrane connected to the traces to facilitate rapid detachable electric connection to a test fixture.
  • the membrane probe may have a terminating resistor for terminating a high frequency transmission line or may have a buffer chip, to provide high impedance, low capacitance loading.
  • Multiple layers of a probe membrane may be employed to attain complex geometry of probe contact pads and trace patterns.
  • FIG. 1 is a perspective view of a membrane probe embodying principles of the present invention
  • FIG. 2 is a cross section of the probe of FIG. 1;
  • FIG. 3 is a sectional view of a test fixture and work table for testing integrated circuit chips of a wafer
  • FIG. 3a is an enlarged sectional detail of a portion of the test fixture of FIG. 3;
  • FIG. 4 is a pictorial view (with parts broken away) of a test fixture and work table for testing integrated circuit chips of a wafer, showing a modified elastomeric connecting annulus;
  • FIG. 4a is an enlarged sectional detail showing aspects of the connecting annulus of FIG. 4;
  • FIG. 5 is a simplified schematic illustration showing use of pick and place machines for handling test wafers and membrane probes
  • FIG. 6 is an enlarged pictorial illustration, partly exploded, of a detail of a test probe having a multi-level membrane, showing a probe contact pad and a terminating resistor;
  • FIG. 7 is a sectional view of a modified membrane probe having an active buffer chip.
  • FIG. 8 illustrates a multiple level probe membrane
  • FIGS. 1 and 2 illustrate a membrane probe embodying principles of the present invention.
  • This probe is an improved version of the diaphragm test probe disclosed in the above-identified co-pending patent application of Kamensky, Cliborn, and Gates, Jr.
  • the probe disclosed in the present application has a number of features in common with that of the earlier co-pending application, including a flexible diaphragm, conductive contact pads and an arrangement for applying pressure to one side of the flexible diaphragm to accomplish self planarizing contact of the probe pads against the pads of a die or chip under test.
  • the membrane probe disclosed herein has a number of significant improvements over the probe of the co-pending application, among which are the specific probe configuration and arrangement that adapt the probe for use in fully automatic wafer testing processes using conventional pick and place loading and cassette storage of both membrane probes and test wafers.
  • the probe is a low cost membrane probe that is readily attachable to and detachable from the test fixture so that the fixture itself does not have to be duplicated each time a new probe is built.
  • FIGS. 1 and 2 An exemplary membrane probe is illustrated in FIGS. 1 and 2 for purposes of explaining the present invention.
  • the probe is formed of an electrically non-conductive rigid or semi-rigid and self supporting substrate 10 in the configuration of a generally flat, thin disc having a central aperture 12 and clad on both sides with thin layers of a transparent flexible dielectric such as polyimide layers 14,16.
  • Outer layer 16 extends across central aperture 12 but inner layer 14 does not, being of an annular configuration with a central aperture coextensive with substrate aperture 12.
  • a pattern of traces 20,22 is formed on one side (an outer or lower side) of the substrate, upon polyimide layer 16.
  • the traces extend from trace end portions, disposed in a selected pattern at a central portion 26 of the membrane 16, within the boundaries of substrate aperture 12, to fan out in generally radial directions to a plurality of metallized vias (apertures) 30 that extend through the substrate and polyimide layers on each side.
  • the inner side of the probe which bears the polyimide layer 14, carries a plurality of relatively short, radially extending connector pads 32, each of which may be connected to one of the traces 20,22 by means one of the appropriately located metallized vias 30.
  • the inner end of each trace bears an axially projecting contact pad, such as pads 36,38, such contact pads being positioned in a configuration that will match the pads of a circuit die that is to be tested.
  • connector pads 32 may be formed directly on the substrate 10, omitting layer 14. In use of the probe, with the outer layer 16 facing downwardly, the contact pads 36,38 are the lowest points of the probe, so that only these pads will contact a chip to be tested.
  • Substrate 12 is formed preferably of a thin rigid photoceram material having a flat edge section 40 (FIG. 1) formed on one side thereof to enable handling and orientation by well known pick and place equipment, as will be described below.
  • the entire membrane probe is dimensioned, configured and arranged to be handled by known pick and place equipment which may be substantially identical to equipment arranged to handle the wafers to be tested.
  • the photoceram substrate 12 in the form of a solid, substantially rigid and self-supporting disc, is provided with a number of preformed holes to be used as the vias 30.
  • the photoceram disc may have the diameter of a standard wafer and may be either three inches or six inches in diameter, for example, having a thickness of about 30-40 mils.
  • a layer of the membrane 14,16 is applied to each side of the photoceram substrate by employing standard spinning techniques in which a small amount of polyimide is placed on the photoceram surface and the disc spun to centrifugally distribute the polyimide evenly and radially outwardly.
  • the spinning process is preferred because it yields a film that, although axially flexible in the central area 26, is radially taut so that the film is dimensionally stable in the plane of the film but may be flexed outwardly by gas pressure, as will be described below.
  • the traces and pads are formed on one side.
  • the pads are then formed on the other side and the aperture 12 is formed in the photoceram and also in the inner polyimide layer 14.
  • a metal such as a mixture of tungsten with a small amount of titanium, W(Ti)
  • W(Ti) titanium
  • the traces 20, which may be formed of copper, for example, are then electrolytically plated up on the pattern of sputtered on metal traces, at the same time metallizing the interior of the vias 30. Then the entire lower surface, except for those areas at the end of traces 20 that are to be covered by contact pads 36,38, is coated with a passivation layer (not shown), which may be of a polyimide, to effectively electrically insulate the conductive trace surfaces. Now, using photolithography, masking and applying resist, the contact pads 36,38 are plated up (to a height of 1 mil, for example) on the ends of traces 20. If deemed necessary or desirable the contact pads may be flash coated with a highly stable conductive material such as a nickel-gold flash coating.
  • connecting pads 32 which then may be copper plated to provide a plurality of connecting pads (about 1 mil high) that extend in closely spaced relation circumferentially around the periphery of the inner side of the membrane probe, as can be best seen in FIG. 1.
  • Each of these pads is positioned at a metallized via 30 so that each pad is electrically connected via such via to an associated one of the traces 20.
  • additional ground traces or ground strips may be formed on the surface of polyimide layer 14 or on an adjacent polyimide layer (not shown in FIGS. 1 and 2).
  • the aperture 12 is etched through the center of substrate 10 (and through the center of layer 14), resulting in the final probe configuration illustrated in FIGS. 1 and 2.
  • the result is a thin, relatively rigid, self-supporting disc having a flat edge 40 for orientation by automatic handling equipment and a thin, flexible, taut, transparent central area 26 to the outer side of which are affixed the projecting probe contact pads 36,38 in a selected pattern that matches the pattern of pads on the die to be tested.
  • the other side of the probe has an annular array of connecting pads 32, all lying in a single plane and a flat annular surface 39 (FIG. 1) between the connecting pads and aperture 12. Annular surface 39 is used for vacuum attachment of the probe, as will be described below.
  • the illustrated membrane probe may be used with many different types of testers. It is preferably used with application of a suitable pressure, such as a gas pressure, against the inner surface of the central portion 26 of the flexible transparent membrane.
  • a suitable pressure such as a gas pressure
  • the probe illustrated is specifically designed for use in a test fixture to which the probe may be readily mechanically and electrically connected and disconnected, either manually or by automatic machines. In the illustrated probe configuration, both electrical and mechanical connection of the probe to a test fixture are accomplished in coordination with the configuration of the inner surface of the probe.
  • This inner surface of the probe includes the co-planar connecting pads 32 that form a substantially circular array around the periphery of the inner side of the probe, and the flat annular inwardly facing surface 39 of polyimide layer 14 that extends radially between the connecting pads 32 and the boundary of the aperture 12 that extends through the substrate.
  • This flat annular surface is configured and arranged to enable vacuum attachment of the membrane to a vacuum chamber 70 of the fixture 50, shown in FIGS. 3 and 3a, as will be described below.
  • FIG. 3 Illustrated in FIG. 3 is a test fixture, generally indicated at 50, fixedly mounted to and above a support 52 that carries a movable work table 54 on which is mounted a test wafer 56 that is to be tested by a membrane probe 58.
  • the latter may be of the configuration illustrated in FIGS. 1 and 2.
  • the work table is movable in X,Y and Z, that is, in two perpendicular directions horizontally, and in one direction vertically by suitable manually controllable means (not shown).
  • a rigid mounting plate 57 is fixedly carried on support 52 and has a central aperture defined by a radially inwardly directed lip 59 which supports circumferential radially outwardly extending flanges 60 of a gas chamber housing 62.
  • Housing 62 is circular in horizontal section and includes an inner right circular cylindrical gas chamber 64 that is closed and sealed at its upper end by a clear, transparent glass window 68 held in place by a retainer ring 71.
  • Chamber housing 62 has a planar annular lower surface defining a peripheral seating area 66 that is congruent with the annular portion 39 of substrate 10 of probe 58, between the connector pads 32 and the boundary of aperture 12 of the wafer probe.
  • An annular recess 70 formed in the bottom surface 66 of the housing, is connected by a conduit 74 to a source of vacuum (not shown) so as to firmly affix the probe 58 to the bottom surface of housing 62 in a gas tight sealing relation when vacuum is applied through the conduit.
  • a source of vacuum not shown
  • An angulated gas conduit 76 formed at and extending through one side of the housing 62, is adapted to be connected by means of a fitting 78 to a source of pressurized gas, such as air, which will apply a pressure within sealed chamber 64 in the order of two to four pounds per square inch, thereby causing flexible membrane layer 16 to flex outwardly.
  • a source of pressurized gas such as air
  • a printed circuit board 80 is fixedly secured to the fixture mounting plate 57 as by mechanical fasteners, clamps or adhesive (not shown).
  • Printed circuit board 80 has coaxial electrical cables 82,84 connecting circuit elements on the board 80 to test circuitry (not shown).
  • Leads on the printed circuit board 80 are connected to an elastomeric electrical connector 88 in the form of a wrap-around metal-on-elastomer or wrap-around MOE.
  • the wrap-around MOE comprises an annulus 90 of a suitable elastomer, such as a silicon sponge, that has a plurality of circumferentially spaced, closely positioned, narrow metal contacting strips 92 (FIG.
  • the circumferential spacing of the contact strips 92 on the MOE is the same as that of the connector pads 32 on the membrane probe.
  • the two sets of connecting strips and pads, the connector strips 92 of the MOE and the connector pads 32 of the probe, are positioned to mate with one another when the membrane probe is mechanically secured by the vacuum of annular recess 70 to the test fixture housing 60.
  • FIG. 4 An alternate configuration of the elastomeric probe connector or wrap-around MOE 88 is shown in FIG. 4.
  • the probe tester mounting plate 57, test fixture housing 60, glass window 68, and retainer 71 are the same as those illustrated in FIG. 3.
  • FIG. 4 shows these same parts in a pictorial view with parts broken away.
  • an elastomeric probe connector in the form of a single sided metal on elastomer or single sided MOE 104 is used instead of the wrap-around MOE of FIGS. 3 and 3a.
  • the single sided MOE is embedded in a multi-level printed circuit board 102 (see the enlarged detail of FIG. 4a).
  • the multi-level printed circuit board is formed of an upper layer of copper plate 106, an intermediate layer of Teflon 108, and a lowermost printed circuit board of polyimide or glass epoxy 110.
  • a pattern of ground traces or ground strips 112 is sandwiched between the copper and Teflon and a pattern of signal traces 114 is sandwiched between the Teflon and polyimide or glass epoxy.
  • the intermediate Teflon layer 108 is radially set back to provide a recess, defined between the outer layers 106 and 110, that receives the single sided MOE 104.
  • MOE 104 includes elongated electrically conductive pads 116 on its lower surface which contact the connector pads 32 of the membrane probe and also the signal leads 114 of the multi-level printed circuit board.
  • the MOE also includes elongated contact pads 118 on its upper surface which contact the ground traces or strips 112 of the printed circuit board, thereby electrically connecting the membrane probe to the test fixture. Suitable electrical connections in the form of vias (not shown) extending through the MOE connect the elongated pads 118 on its upper surface to associated connecting pads 32 on the membrane probe. As in the arrangement of FIG. 3, the signal leads 114 and ground leads 112 of the circuit board are coupled to testing circuitry by means of coaxial connecting cables 120,122.
  • test probe 58 and the work table 54.
  • the table temporarily but fixedly supports the wafer 56 which is to be tested.
  • the small rectangles indicated at 130 on the wafer 56 represent die pads of the chips that are to be tested.
  • the die pads define a pattern that is precisely matched by the contact pads of the wafer probe 58.
  • the contact pads may be made in a pattern and number sufficient to test a single group of die pads so that testing of all groups of die pads on a wafer will be achieved by testing one group at a time.
  • the number and pattern of probe contact pads may be the same as the number and pattern of die pads of several or all circuits on the wafer so that several or all chips can be contacted in one position of the membrane probe.
  • the metal-on-elastomer fixture connector affords a simple, rapid detachable electrical connection between the test fixture and connector pads on the membrane probe.
  • the latter is formed with its circular peripheral array of connector pads 32, which precisely match the circular peripheral array of connector pads 92 or 116 of the wrap-around or single sided MOE.
  • the resilient elasticity of the MOE ensures good electrical contact of all connector pads when the wafer is pressed upwardly against the fixture by means of the applied vacuum.
  • the MOE connector pads 92 and 116 may readily deflect individually relative to one another when contacted by the associated connector pads 32 of the membrane probe to assure good firm, but detachable, electrical connection of the membrane probe to the test fixture and to ensure planarity so that all connector pads will be in good electrical contact.
  • a cassette storage device 134 stores a plurality of test wafers (bearing dies to be tested) which may be selectively extracted by a conventional type of pick and place machine such as that schematically indicated at 136.
  • a test wafer, such as wafer 138 illustrated in FIG. 5, is extracted from storage cassette 134 and placed on the work table 54 of the test fixture.
  • a second cassette storage device 140 stores a number of different membrane probes, all of which have the same mechanical size and configuration but which differ from one another by different patterns of traces and contact pads.
  • a second pick and place machine 142 is arranged to extract a selected membrane probe from storage device 140 and position it on the test fixture 50 for connection in the manner illustrated in FIGS. 3 and 4.
  • FIG. 5 illustrates a membrane probe 144 being extracted from storage 140 by pick and place machine 142 to be positioned at and mechanically and electrically connected to the test fixture 50.
  • test fixture chamber 64 After the test probe has been positioned in contact with the elastomeric probe connector, vacuum is applied via conductor 74 to mechanically fix the probe to the fixture, and the test wafer is moved upwardly to or toward a very light contact with the wafer contact pads. Now the operator visually observes the contact pads, which are readily visible through the probe aperture 12 and the transparent membrane 16 upon which the contact pads are mounted. While the operator observes relative registration of the probe contact pads with the die pads, the table 54 and wafer 38 thereon are moved to precisely align the probe contact pads with the die pads of the wafer. The table then may be slightly raised an additional amount to a point where the pads are barely or almost contacting the die pads, and gas pressure then is applied to the test fixture chamber 64.
  • the applied gas pressure on the thin flexible polyimide film forces the probe contact pads into contact with the wafer die pads, providing a high contact pressure while the flexibility of the membrane that carries the contact pads provides a self planarization of the contact pads to ensure good firm electrical contact between each probe pad and its associated die pad.
  • a typical wafer may contain dozens or hundreds of groups of die pads, and the probe membrane may contain one or more groups of contact pads so that one or more chips on the wafer under test may be tested at a given time.
  • the gas pressure is released from the chamber 64 and the table is moved to enable visual registration of the probe contact pads with a second group of die pads, whereupon the test is accomplished again after pressurization of the wafer probe membrane chamber.
  • FIG. 6 Illustrated in FIG. 6 is a fragmentary partly exploded detail of an end portion of one of the transmission lines 20a, 150 of a multi-level membrane probe showing application of a terminating resistor. A passivation layer is also shown in this figure.
  • a trace 20a carrying a probe contact pad 36a is positioned on one side of the membrane probe comprising a photoceramic substrate (not shown in FIG. 6) between two polyimide layers.
  • a multi-level membrane so that a second flexible, transparent polyimide membrane 16a is formed on the outer side of the photoceram substrate, between the substrate and a first flexible transparent polyimide membrane 16b.
  • a ground strip or ground lead 150 is photolithographically formed on the outer surface of the second membrane 16a, as previously described herein with respect to first membrane 16 and traces 20. Although certain of the layers of FIG. 6 are shown exploded for clarity of illustration, it will be understood that all of the illustrated layers are in full contact with each other.
  • the combination of ground strip 150 and trace 20a forms an AC transmission line having a readily controlled predetermined impedance. Impedance of the line is controlled by selectively controlling the cross sectional width of the trace and ground strip, and the thickness of the dielectric membrane 16b that separates the trace and ground strip. For proper transmission of high frequency signals between the probe and the circuit under test it is necessary to terminate the transition line with an impedance that is the same as the impedance of the transmission line itself.
  • the terminating resistor must be physically located as close as possible to the circuit under test.
  • transmission line termination by appropriate resistance is not possible at a point close to the chip under test.
  • a thin film terminating resistor 152 of chromium or the like is formed to contact the trace 20a.
  • the terminating resistor is formed so as to be electrically connected to the trace 20 and to ground strip 150 by means of a metallized via 154 extending through the probe membrane 16b.
  • the terminating resistor is located immediately adjacent pad 36a.
  • Both of the membranes 16a and 16b, on which traces and ground strips are fixed, are on the same outer side of the photoceram substrate and all leads are passivated or covered with a very thin layer of non-conductive polyimide, such as the polyimide passivation layer 158, excepting only the connector pads and contact pads. With this arrangement the transmission line is effectively terminated at the contact pad 36a which will be precisely at the die to be tested.
  • the polyimide base layer 16a and passivation layer 158 may be typically about 0.2 mils thick, whereas the thickness of layer 16b is chosen in conjunction with cross sections of the trace 20a and ground strip 150 to obtain the selected characteristic impedance of transmission line 20a, 150. This thickness may be about 1 mil for a 50 ohm transmission line.
  • a photoceram substrate 160 has traces 162 formed thereon as previously described and including projecting contact pads 164 located at the unsupported center area 166 of the flexible transparent polyimide membrane which spans the substrate aperture 168.
  • traces 162 formed thereon as previously described and including projecting contact pads 164 located at the unsupported center area 166 of the flexible transparent polyimide membrane which spans the substrate aperture 168.
  • Radially outwardly of the photoceram wafer aperture 168 one or more wells 170 are formed in the wafer body.
  • active buffer chips such as chip 172, having an input connected to trace 162 and having a line driver output connected to an output trace portion 174 on the wafer.
  • the output trace 174 is connected to a membrane probe connector pad 176 by means of a metallized via 178.
  • Power leads (not shown) are also connected to the chip 172.
  • traces 20 and pads 36 may be located greatly enhances application and operation of the described membrane probes, even greater two dimensional freedom of probe pad location is achieved by employing multiple level membranes.
  • traces can be allowed to physically cross one another on different layers and single data busses may be arranged to connect to corresponding pads in plural groups of pads, thereby enabling testing of multiple dies with one touchdown.
  • a fragment of a membrane probe including a layer of photoceram clad on both sides with a polyimide membrane as previously described has its outer membrane 180 formed on its outer (lower) side with a plurality of patterns of contact pads generally indicated at 182a, 182b, 182c and 182d.
  • traces 184a and 184b On the inner (or upper) side 179 of membrane 180 are formed groups of traces, such as traces 184a and 184b.
  • the traces on the upper surface 179 may be formed directly on the membrane 180 or, as disclosed in connection with FIG. 6, may be formed on a second polyimide layer (not shown in FIG. 8) that is in direct face to face contact with layer 180.
  • the traces on the upper surface 179 are electrically connected to traces 186 and contact pads on the lower surface by means of vias, such as vias 188, extending through the membrane 180.
  • a single trace, such as trace 190, of a data bus may be connected to several pads, such as pads 190a, 190b, 190c and 190d, by means of connecting traces that cross each other (and cross other traces) on opposite sides of the non-conductive membrane 180.
  • pads on both sides of the membrane are connected to peripheral probe connector pads (not shown in FIG. 8) such as pads 32 of FIGS. 1 and 2 on the inner side of the photoceram.
  • the trace pattern and contact pad pattern of each probe are determined by the arrangement of die pads to be tested. Die pads of two of such chips are illustrated at 194 and 196 in FIG. 8.
  • the membrane probe may be made with two or more layers of mutually insulated dielectric film. With the arrangements of membrane probes illustrated herein probe pads may be located for connection to die pads at the interior of a chip for use in integrated circuit diagnostics.
  • the described membrane probe specifically enables very high probe contact density. For example, a three inch diameter membrane probe may be formed with up to 360 contact pads, whereas a six inch diameter membrane probe may be formed with more than 360 contact pads.
  • Using the metal-on-elastomer flexible connector to connect the membrane probe to the test fixture, and utilizing the vacuum clamping of the membrane probe greatly facilitate the use of such high density probes.
  • test probe and fixture and the method of testing described herein have a great many advantages. These advantages include the availability of densities of probe contact pads in the order of 360 contact pads or more on a single six inch probe, the ability to precisely control impedance of transmission lines for superior high frequency performance, the availability of thin film terminating resistors located immediately adjacent die pads for superior high frequency performance, and the soft contact provided by the probe contact pads which causes less damage to die pads than needle or blade contacts of prior probe cards. Further advantages include the visual clarity of the membrane which allows precise alignment of the probe contact pads to semiconductor pads and use and manufacture of probe pads of less than 1 mil in dimension. In addition, virtually unrestricted two dimensional freedom of probe contact locations is available using photolithographic definition techniques and multiple level membranes. This allows probe pads located in the interior of a die to be contacted by probe pads for use in diagnostics. Multiple groups of die pads can be tested in a single touchdown. Burn-in of a wafer circuit can be performed using the described membrane probe.
  • the temperature coefficient of resistance of the membrane can be matched to the temperature coefficient of resistance of a wafer under test so that testing over an extended range of temperatures is possible. Without such matching of temperature coefficients of resistance, a different expansion of the test probe membrane and the wafer would cause serious misalignment or require use of different probes at different temperatures.
  • the membrane probe test fixture which is a relatively high cost item, does not have to be duplicated for each different probe card since many different types of probe cards may be employed and readily attached to or detached from the fixture, which is adapted to fully automatic testing as described.
  • the quick disconnect connector element employing metal-on-elastomer technology firmly contacts the connector pads on the inner side of the membrane probe and facilitates rapid mechanical and electrical interengagement and disengagement of the membrane probe with the fixture.

Abstract

A membrane probe (10, 12, 14, 16, 58, 144) for testing integrated circuits (56,138) while still on the wafer upon which they are manufactured includes a flexible visually clear and self planarizing membrane (26) having circuit traces (20) and ground shielding planes (14), terminating resistor (152) and active buffer chips (172) formed thereon. Probe contact pads (36,38) electroplated on areas of the traces, and connector pads (32) plated on the membrane facilitate rapid detachable connection to a test fixture (50). The probe has a configuration, dimension and structure like that of the wafer itself so that automated pick and place equipment (136,142) employed for handling the wafers (138) may also be used to handle the probes (144). An unique test fixture (50) is adapted to receive and detachably secure a selected probe to the fixture.
A metal-on-elastomer annulus (88,104) is employed in the test fixture to make electrical contact between contact pads (32) plated on the back side of the membrane probe and a printed circuit board that is used to route signals to the testing equipment.

Description

This is a division of application Ser. No. 07/606,676, filed Oct. 31, 1990, now U.S. Pat. No. 5,148,103.
This application is related to co-pending application Ser. No. 277,819, filed Nov. 30, 1988, invented by Albert Kamensky, James H. Cliborn and Louis E. Gates, Jr., for DIAPHRAGM TEST PROBE (Attorney Docket No. PD-87445) and assigned to the assignee of the present application.
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to testing of integrated circuits and more particularly concerns improved test fixtures and probes that readily lend themselves to automated testing and efficient probe manufacture and use.
2. Description of the Related Art
Integrated circuits or chips including conductive traces, electrical components, and active devices are fabricated in batches of large numbers of similar or identical circuits on a single wafer and then individually cut from the wafer for use. Because production techniques and processes are pushed to the limits of accuracy and repeatability, significant numbers are of circuits on a single wafer may be unacceptable or inoperable. Therefore it is desirable to test each circuit individually before it is separated from the other by severing the wafer into its many component circuits for its intended use.
Probe cards presently employed for testing of integrated circuits while still on the wafer employ a number of probe contact elements, commonly in the form of very small blades or needles that are mechanically and electrically fixed to a circuit board or the like and have leads that fan out to outer edges of the probe card for making connections between the probe card and testing circuitry. The contact blades or needles of the probe card are moved into contact with specific areas, namely the pads of the integrated circuit or chip under test, and may be electrically connected so as to apply selected input signals and to read output signals from the device under test. In this manner the chips are tested on the wafer, before being connected for intended use, by applying operating signals and monitoring and evaluating resultant outputs.
Probe cards presently employed are bulky and complex, being difficult to store and handle. Mechanical contact needles and blades require precise alignment and positioning. They also require precise planarization. That is, the contact surfaces of the probe must all lie in the same plane. An example of such a probe card employing a number of small, thin metal blades having needle like probe members fixed thereto is illustrated in U.S. Pat. No. 4,161,692 of Tarzwell for Probe Device For Integrated Circuit Wafers. In probe cards of this type the individual probe blades or needles must be mounted individually, frequently by use of micro-manipulators to properly locate the closely packed small probe elements, which then may be soldered or otherwise fixed in place. Final position adjustment in both X,Y, and Z, that is, in lateral position and elevation, is then accomplished for individual ones of the probe blades and needles by bending. For planarization, the probe card may be brought down upon a flat plate so as to ensure that all of the probe contacts will touch at the same time. These procedures are time consuming, tedious and expensive. Moreover, because the final positioning of contacts of prior probe cards is accomplished by bending of the metal blades or needles, the device is subject to errors caused by creep. That is, the parts, after bending, tend to "creep" or return to an original condition or position in which they existed prior to being stressed during the bending adjustment process. The creep occurs even when the probe card is on the shelf and not being used, so that, after a period of months or sometimes weeks on the shelf, the probe contacts may need to be readjusted. More frequent adjustment and probe maintenance may be required when the probes are used.
In use of such probe cards the contact between the probe card blades or needles and the circuit chip is frequently made by a scrubbing action, which tends to deflect the slender probe elements as much as several mils on each touchdown. This displacement, which occurs repetitively upon each test, further tends to change the desired positioning of the elements.
The probe may have from fifty to several hundred contacts, each of which must be precisely and individually positioned with respect to all others so that upon contact with the circuit chip all probe contacts will contact all pads of the chip under test. All of this means that the probe cards presently used are exceedingly expensive, require much maintenance, and are subject to many errors.
Other probes employing blades and needles are illustrated in U.S. Pat. No. 4,783,625 to Emory J. Harry et al, and U.S. Pat. No. 4,791,363 to John K. Logan. U.S. Patents to Gleason et al, U.S. Pat. No. 4,849,689 and Lockwood et al, U.S. Pat. No. 4,697,143 show cantilevered trapezoidal probes which may include detachable tip sections and circuit boards that mount probe conductors.
As integrated circuit speeds increase, so too do the difficulty and extent of the testing problems. Such problems are caused by cross talk between adjacent signal traces, signal loss and degradation due to capacitative loading of the circuit under test, and increased need for shielding and impedance matching of signal lines throughout the test fixture and test head. High frequency probe transmission lines must be properly terminated. Although high frequency hardware can be provided up to the test head itself, the physical connection between the test head and the integrated circuit pad, which relies upon exposed metallic blades or needles, provides poor high frequency performance and extremely fragile components. Thus the final part of the probe transmission line cannot be properly terminated.
It is often necessary to increase the density of probe contact pads and to provide test contact with chip pads that are located at the interior of the chip. This may require that leads to the probe contacts cross one another or that the blades or needles of the existing probe cards cross one another. Such a crossing of blades or needles is not physically possible with present configurations of test probes.
As size and spacing of integrated circuit chips decrease and density of chip contacts increases, it becomes ever more difficult to make mechanical blade or needle contacts as small and closely spaced as required for proper testing of modern integrated circuit chips. Moreover, the great bulk and complex configuration of prior art probe cards do not readily lend themselves to automated handling or simplified storage. Frequently the relatively costly test fixtures themselves must be changed whenever the probe card is changed for testing of a different chip configuration.
The test probe described in the above-identified co-pending patent application of Kamensky et al employs photolithographically formed probe contacts and leads to eliminate many of these problems but fails to provide for a number of improvements that are available with the methods and apparatus described herein. The disclosure of such co-pending application is incorporated by this reference as though fully set forth herein.
Accordingly, it is an object of the present invention to provide for testing of integrated circuit chips while avoiding or minimizing above-mentioned problems.
SUMMARY OF THE INVENTION
In carrying out principles of the present invention in accordance with a preferred embodiment of one feature thereof, a plurality of circuit chips of different configuration are tested by providing a plurality of test probes of which each is configured for testing an unique chip configuration. That is, each test probe is configured for testing one configuration of the circuit chips. The probes are stored in a cassette. A chip to be tested is positioned adjacent a test fixture, and a pick and place machine is employed to selectively extract a chosen test probe from the cassette and move it to the fixture to which it is detachably connected, both mechanically and electrically, to allow the test probe to contact the chip to be tested.
According to another feature of the invention, a test probe is formed of a flexible membrane having a pattern of electrically conductive traces formed on the membrane, a plurality of contact pads on selected ones of the traces, and connector pads on the membrane connected to the traces to facilitate rapid detachable electric connection to a test fixture.
According to other features of the invention, the membrane probe may have a terminating resistor for terminating a high frequency transmission line or may have a buffer chip, to provide high impedance, low capacitance loading. Multiple layers of a probe membrane may be employed to attain complex geometry of probe contact pads and trace patterns.
BRIEF DESCRIPTION OF THE DRAWINGS
In the accompanying drawings:
FIG. 1 is a perspective view of a membrane probe embodying principles of the present invention;
FIG. 2 is a cross section of the probe of FIG. 1;
FIG. 3 is a sectional view of a test fixture and work table for testing integrated circuit chips of a wafer;
FIG. 3a is an enlarged sectional detail of a portion of the test fixture of FIG. 3;
FIG. 4 is a pictorial view (with parts broken away) of a test fixture and work table for testing integrated circuit chips of a wafer, showing a modified elastomeric connecting annulus;
FIG. 4a is an enlarged sectional detail showing aspects of the connecting annulus of FIG. 4;
FIG. 5 is a simplified schematic illustration showing use of pick and place machines for handling test wafers and membrane probes;
FIG. 6 is an enlarged pictorial illustration, partly exploded, of a detail of a test probe having a multi-level membrane, showing a probe contact pad and a terminating resistor;
FIG. 7 is a sectional view of a modified membrane probe having an active buffer chip; and
FIG. 8 illustrates a multiple level probe membrane.
DESCRIPTION OF THE INVENTION
FIGS. 1 and 2 illustrate a membrane probe embodying principles of the present invention. This probe is an improved version of the diaphragm test probe disclosed in the above-identified co-pending patent application of Kamensky, Cliborn, and Gates, Jr. The probe disclosed in the present application has a number of features in common with that of the earlier co-pending application, including a flexible diaphragm, conductive contact pads and an arrangement for applying pressure to one side of the flexible diaphragm to accomplish self planarizing contact of the probe pads against the pads of a die or chip under test. The membrane probe disclosed herein has a number of significant improvements over the probe of the co-pending application, among which are the specific probe configuration and arrangement that adapt the probe for use in fully automatic wafer testing processes using conventional pick and place loading and cassette storage of both membrane probes and test wafers. In the design to be described herein the probe is a low cost membrane probe that is readily attachable to and detachable from the test fixture so that the fixture itself does not have to be duplicated each time a new probe is built.
An exemplary membrane probe is illustrated in FIGS. 1 and 2 for purposes of explaining the present invention. The probe is formed of an electrically non-conductive rigid or semi-rigid and self supporting substrate 10 in the configuration of a generally flat, thin disc having a central aperture 12 and clad on both sides with thin layers of a transparent flexible dielectric such as polyimide layers 14,16. Outer layer 16 extends across central aperture 12 but inner layer 14 does not, being of an annular configuration with a central aperture coextensive with substrate aperture 12. A pattern of traces 20,22 is formed on one side (an outer or lower side) of the substrate, upon polyimide layer 16. The traces extend from trace end portions, disposed in a selected pattern at a central portion 26 of the membrane 16, within the boundaries of substrate aperture 12, to fan out in generally radial directions to a plurality of metallized vias (apertures) 30 that extend through the substrate and polyimide layers on each side. The inner side of the probe, which bears the polyimide layer 14, carries a plurality of relatively short, radially extending connector pads 32, each of which may be connected to one of the traces 20,22 by means one of the appropriately located metallized vias 30. The inner end of each trace bears an axially projecting contact pad, such as pads 36,38, such contact pads being positioned in a configuration that will match the pads of a circuit die that is to be tested. Alternatively, connector pads 32 may be formed directly on the substrate 10, omitting layer 14. In use of the probe, with the outer layer 16 facing downwardly, the contact pads 36,38 are the lowest points of the probe, so that only these pads will contact a chip to be tested.
Substrate 12 is formed preferably of a thin rigid photoceram material having a flat edge section 40 (FIG. 1) formed on one side thereof to enable handling and orientation by well known pick and place equipment, as will be described below. The entire membrane probe is dimensioned, configured and arranged to be handled by known pick and place equipment which may be substantially identical to equipment arranged to handle the wafers to be tested.
In manufacture of the described membrane probe the photoceram substrate 12, in the form of a solid, substantially rigid and self-supporting disc, is provided with a number of preformed holes to be used as the vias 30. Preferably the photoceram disc may have the diameter of a standard wafer and may be either three inches or six inches in diameter, for example, having a thickness of about 30-40 mils. A layer of the membrane 14,16 is applied to each side of the photoceram substrate by employing standard spinning techniques in which a small amount of polyimide is placed on the photoceram surface and the disc spun to centrifugally distribute the polyimide evenly and radially outwardly. Several repetitions of this spinning process will build up the membrane thickness to provide a finished polyimide membrane of about 1 mil in thickness on each side of the photoceram substrate. The polyimide is highly transparent, as described in the above-identified co-pending application, to enable visual registration of the membrane probe contact pads 36,38 with appropriate pads on the wafer die being tested. Although the polyimide film may be applied in various ways, the spinning process is preferred because it yields a film that, although axially flexible in the central area 26, is radially taut so that the film is dimensionally stable in the plane of the film but may be flexed outwardly by gas pressure, as will be described below.
After application of the polyimide film to both sides, the traces and pads are formed on one side. The pads are then formed on the other side and the aperture 12 is formed in the photoceram and also in the inner polyimide layer 14. To perform these steps, after photolithographically applying resist in a suitable pattern to the outer polyimide layer 16, a metal such as a mixture of tungsten with a small amount of titanium, W(Ti), is sputtered over the entire surface including the resist and vias, and the resist (and portions of the sputtered metal) is then lifted to leave a pattern of thin, sputtered traces forming the pattern of traces 20 on the polyimide layer 16. The traces 20, which may be formed of copper, for example, are then electrolytically plated up on the pattern of sputtered on metal traces, at the same time metallizing the interior of the vias 30. Then the entire lower surface, except for those areas at the end of traces 20 that are to be covered by contact pads 36,38, is coated with a passivation layer (not shown), which may be of a polyimide, to effectively electrically insulate the conductive trace surfaces. Now, using photolithography, masking and applying resist, the contact pads 36,38 are plated up (to a height of 1 mil, for example) on the ends of traces 20. If deemed necessary or desirable the contact pads may be flash coated with a highly stable conductive material such as a nickel-gold flash coating.
Similarly, photolithography, employing suitable application of resist, development of the resist and removal of the undeveloped resist, is then employed to first sputter a thin metal coating on inner layer 14 in the desired pattern of connecting pads 32 which then may be copper plated to provide a plurality of connecting pads (about 1 mil high) that extend in closely spaced relation circumferentially around the periphery of the inner side of the membrane probe, as can be best seen in FIG. 1. Each of these pads is positioned at a metallized via 30 so that each pad is electrically connected via such via to an associated one of the traces 20. If deemed necessary or desirable when forming the connecting pads 32, additional ground traces or ground strips (not shown in FIGS. 1 and 2) may be formed on the surface of polyimide layer 14 or on an adjacent polyimide layer (not shown in FIGS. 1 and 2).
After forming the conductive traces on both sides of the membrane probe by suitable masking and application of resist, the aperture 12 is etched through the center of substrate 10 (and through the center of layer 14), resulting in the final probe configuration illustrated in FIGS. 1 and 2. The result is a thin, relatively rigid, self-supporting disc having a flat edge 40 for orientation by automatic handling equipment and a thin, flexible, taut, transparent central area 26 to the outer side of which are affixed the projecting probe contact pads 36,38 in a selected pattern that matches the pattern of pads on the die to be tested. The other side of the probe has an annular array of connecting pads 32, all lying in a single plane and a flat annular surface 39 (FIG. 1) between the connecting pads and aperture 12. Annular surface 39 is used for vacuum attachment of the probe, as will be described below.
The illustrated membrane probe may be used with many different types of testers. It is preferably used with application of a suitable pressure, such as a gas pressure, against the inner surface of the central portion 26 of the flexible transparent membrane. However, the probe illustrated is specifically designed for use in a test fixture to which the probe may be readily mechanically and electrically connected and disconnected, either manually or by automatic machines. In the illustrated probe configuration, both electrical and mechanical connection of the probe to a test fixture are accomplished in coordination with the configuration of the inner surface of the probe. This inner surface of the probe includes the co-planar connecting pads 32 that form a substantially circular array around the periphery of the inner side of the probe, and the flat annular inwardly facing surface 39 of polyimide layer 14 that extends radially between the connecting pads 32 and the boundary of the aperture 12 that extends through the substrate. This flat annular surface is configured and arranged to enable vacuum attachment of the membrane to a vacuum chamber 70 of the fixture 50, shown in FIGS. 3 and 3a, as will be described below.
Illustrated in FIG. 3 is a test fixture, generally indicated at 50, fixedly mounted to and above a support 52 that carries a movable work table 54 on which is mounted a test wafer 56 that is to be tested by a membrane probe 58. The latter may be of the configuration illustrated in FIGS. 1 and 2. The work table is movable in X,Y and Z, that is, in two perpendicular directions horizontally, and in one direction vertically by suitable manually controllable means (not shown).
As can be seen in FIG. 3, a rigid mounting plate 57 is fixedly carried on support 52 and has a central aperture defined by a radially inwardly directed lip 59 which supports circumferential radially outwardly extending flanges 60 of a gas chamber housing 62. Housing 62 is circular in horizontal section and includes an inner right circular cylindrical gas chamber 64 that is closed and sealed at its upper end by a clear, transparent glass window 68 held in place by a retainer ring 71. Chamber housing 62 has a planar annular lower surface defining a peripheral seating area 66 that is congruent with the annular portion 39 of substrate 10 of probe 58, between the connector pads 32 and the boundary of aperture 12 of the wafer probe.
An annular recess 70, formed in the bottom surface 66 of the housing, is connected by a conduit 74 to a source of vacuum (not shown) so as to firmly affix the probe 58 to the bottom surface of housing 62 in a gas tight sealing relation when vacuum is applied through the conduit. Thus the membrane probe is securely mechanically attached in a readily attachable and detachable fashion to the test fixture.
An angulated gas conduit 76, formed at and extending through one side of the housing 62, is adapted to be connected by means of a fitting 78 to a source of pressurized gas, such as air, which will apply a pressure within sealed chamber 64 in the order of two to four pounds per square inch, thereby causing flexible membrane layer 16 to flex outwardly.
For readily detachable and attachable electrical connection of the wafer probe to the test fixture, a printed circuit board 80 is fixedly secured to the fixture mounting plate 57 as by mechanical fasteners, clamps or adhesive (not shown). Printed circuit board 80 has coaxial electrical cables 82,84 connecting circuit elements on the board 80 to test circuitry (not shown). Leads on the printed circuit board 80 are connected to an elastomeric electrical connector 88 in the form of a wrap-around metal-on-elastomer or wrap-around MOE. The wrap-around MOE comprises an annulus 90 of a suitable elastomer, such as a silicon sponge, that has a plurality of circumferentially spaced, closely positioned, narrow metal contacting strips 92 (FIG. 3a) wrapped entirely around the elastomer. The circumferential spacing of the contact strips 92 on the MOE is the same as that of the connector pads 32 on the membrane probe. The two sets of connecting strips and pads, the connector strips 92 of the MOE and the connector pads 32 of the probe, are positioned to mate with one another when the membrane probe is mechanically secured by the vacuum of annular recess 70 to the test fixture housing 60.
An alternate configuration of the elastomeric probe connector or wrap-around MOE 88 is shown in FIG. 4. In FIG. 4 the probe tester mounting plate 57, test fixture housing 60, glass window 68, and retainer 71 are the same as those illustrated in FIG. 3. FIG. 4 shows these same parts in a pictorial view with parts broken away. However, in the arrangement of FIG. 4, an elastomeric probe connector in the form of a single sided metal on elastomer or single sided MOE 104 is used instead of the wrap-around MOE of FIGS. 3 and 3a. The single sided MOE is embedded in a multi-level printed circuit board 102 (see the enlarged detail of FIG. 4a). The multi-level printed circuit board is formed of an upper layer of copper plate 106, an intermediate layer of Teflon 108, and a lowermost printed circuit board of polyimide or glass epoxy 110. A pattern of ground traces or ground strips 112 is sandwiched between the copper and Teflon and a pattern of signal traces 114 is sandwiched between the Teflon and polyimide or glass epoxy. The intermediate Teflon layer 108 is radially set back to provide a recess, defined between the outer layers 106 and 110, that receives the single sided MOE 104. MOE 104 includes elongated electrically conductive pads 116 on its lower surface which contact the connector pads 32 of the membrane probe and also the signal leads 114 of the multi-level printed circuit board. The MOE also includes elongated contact pads 118 on its upper surface which contact the ground traces or strips 112 of the printed circuit board, thereby electrically connecting the membrane probe to the test fixture. Suitable electrical connections in the form of vias (not shown) extending through the MOE connect the elongated pads 118 on its upper surface to associated connecting pads 32 on the membrane probe. As in the arrangement of FIG. 3, the signal leads 114 and ground leads 112 of the circuit board are coupled to testing circuitry by means of coaxial connecting cables 120,122.
Also shown in the pictorial view of FIG. 4 are the test probe 58 and the work table 54. The table temporarily but fixedly supports the wafer 56 which is to be tested. The small rectangles indicated at 130 on the wafer 56 represent die pads of the chips that are to be tested. The die pads define a pattern that is precisely matched by the contact pads of the wafer probe 58. It will be readily understood that the contact pads may be made in a pattern and number sufficient to test a single group of die pads so that testing of all groups of die pads on a wafer will be achieved by testing one group at a time. Alternatively, the number and pattern of probe contact pads may be the same as the number and pattern of die pads of several or all circuits on the wafer so that several or all chips can be contacted in one position of the membrane probe.
In either the arrangement of FIG. 3 or FIG. 4 the metal-on-elastomer fixture connector affords a simple, rapid detachable electrical connection between the test fixture and connector pads on the membrane probe. The latter is formed with its circular peripheral array of connector pads 32, which precisely match the circular peripheral array of connector pads 92 or 116 of the wrap-around or single sided MOE. The resilient elasticity of the MOE ensures good electrical contact of all connector pads when the wafer is pressed upwardly against the fixture by means of the applied vacuum. Because of the resilient support and mounting of the MOE connector pads 92 and 116, they may readily deflect individually relative to one another when contacted by the associated connector pads 32 of the membrane probe to assure good firm, but detachable, electrical connection of the membrane probe to the test fixture and to ensure planarity so that all connector pads will be in good electrical contact.
The described arrangement of fixture and membrane probe readily lend themselves to automatic test operation in a system such as schematically depicted in FIG. 5. In such an automatic system a cassette storage device 134 stores a plurality of test wafers (bearing dies to be tested) which may be selectively extracted by a conventional type of pick and place machine such as that schematically indicated at 136. A test wafer, such as wafer 138 illustrated in FIG. 5, is extracted from storage cassette 134 and placed on the work table 54 of the test fixture.
Similarly, a second cassette storage device 140 stores a number of different membrane probes, all of which have the same mechanical size and configuration but which differ from one another by different patterns of traces and contact pads. A second pick and place machine 142, is arranged to extract a selected membrane probe from storage device 140 and position it on the test fixture 50 for connection in the manner illustrated in FIGS. 3 and 4. FIG. 5 illustrates a membrane probe 144 being extracted from storage 140 by pick and place machine 142 to be positioned at and mechanically and electrically connected to the test fixture 50. After the test probe has been positioned in contact with the elastomeric probe connector, vacuum is applied via conductor 74 to mechanically fix the probe to the fixture, and the test wafer is moved upwardly to or toward a very light contact with the wafer contact pads. Now the operator visually observes the contact pads, which are readily visible through the probe aperture 12 and the transparent membrane 16 upon which the contact pads are mounted. While the operator observes relative registration of the probe contact pads with the die pads, the table 54 and wafer 38 thereon are moved to precisely align the probe contact pads with the die pads of the wafer. The table then may be slightly raised an additional amount to a point where the pads are barely or almost contacting the die pads, and gas pressure then is applied to the test fixture chamber 64. The applied gas pressure on the thin flexible polyimide film forces the probe contact pads into contact with the wafer die pads, providing a high contact pressure while the flexibility of the membrane that carries the contact pads provides a self planarization of the contact pads to ensure good firm electrical contact between each probe pad and its associated die pad.
A typical wafer may contain dozens or hundreds of groups of die pads, and the probe membrane may contain one or more groups of contact pads so that one or more chips on the wafer under test may be tested at a given time. After completing a test on one chip or group of chips the gas pressure is released from the chamber 64 and the table is moved to enable visual registration of the probe contact pads with a second group of die pads, whereupon the test is accomplished again after pressurization of the wafer probe membrane chamber. It will be readily understood that the test procedure itself, after the appropriate contact is made between the test fixture and the wafer to be tested, can be carried out in an exceedingly short time, whereas the time required to properly position the test probe and wafer under test is considerably longer. The arrangements described herein greatly decrease the positioning and registration time and significantly facilitate visual registration so as to greatly increase the rate of testing.
Illustrated in FIG. 6 is a fragmentary partly exploded detail of an end portion of one of the transmission lines 20a, 150 of a multi-level membrane probe showing application of a terminating resistor. A passivation layer is also shown in this figure. In the arrangement illustrated in FIG. 6 a trace 20a carrying a probe contact pad 36a is positioned on one side of the membrane probe comprising a photoceramic substrate (not shown in FIG. 6) between two polyimide layers. In this case it is preferred to use a multi-level membrane so that a second flexible, transparent polyimide membrane 16a is formed on the outer side of the photoceram substrate, between the substrate and a first flexible transparent polyimide membrane 16b. A ground strip or ground lead 150 is photolithographically formed on the outer surface of the second membrane 16a, as previously described herein with respect to first membrane 16 and traces 20. Although certain of the layers of FIG. 6 are shown exploded for clarity of illustration, it will be understood that all of the illustrated layers are in full contact with each other. The combination of ground strip 150 and trace 20a forms an AC transmission line having a readily controlled predetermined impedance. Impedance of the line is controlled by selectively controlling the cross sectional width of the trace and ground strip, and the thickness of the dielectric membrane 16b that separates the trace and ground strip. For proper transmission of high frequency signals between the probe and the circuit under test it is necessary to terminate the transition line with an impedance that is the same as the impedance of the transmission line itself. Preferably the terminating resistor must be physically located as close as possible to the circuit under test. In prior arrangements, particularly those employing blades and needles, transmission line termination by appropriate resistance is not possible at a point close to the chip under test. In the arrangement described herein, however, and as particularly illustrated in FIG. 6, a thin film terminating resistor 152 of chromium or the like is formed to contact the trace 20a. The terminating resistor is formed so as to be electrically connected to the trace 20 and to ground strip 150 by means of a metallized via 154 extending through the probe membrane 16b. The terminating resistor is located immediately adjacent pad 36a. Both of the membranes 16a and 16b, on which traces and ground strips are fixed, are on the same outer side of the photoceram substrate and all leads are passivated or covered with a very thin layer of non-conductive polyimide, such as the polyimide passivation layer 158, excepting only the connector pads and contact pads. With this arrangement the transmission line is effectively terminated at the contact pad 36a which will be precisely at the die to be tested.
The polyimide base layer 16a and passivation layer 158 may be typically about 0.2 mils thick, whereas the thickness of layer 16b is chosen in conjunction with cross sections of the trace 20a and ground strip 150 to obtain the selected characteristic impedance of transmission line 20a, 150. This thickness may be about 1 mil for a 50 ohm transmission line.
The described arrangement lends itself to the construction of membrane probes of very low capacitance. Active buffer chips can be mounted on the photoceram substrate for even lower capacitance loading. Thus, as illustrated in FIG. 7, a photoceram substrate 160 has traces 162 formed thereon as previously described and including projecting contact pads 164 located at the unsupported center area 166 of the flexible transparent polyimide membrane which spans the substrate aperture 168. Radially outwardly of the photoceram wafer aperture 168 one or more wells 170 are formed in the wafer body. In these wells are mounted active buffer chips, such as chip 172, having an input connected to trace 162 and having a line driver output connected to an output trace portion 174 on the wafer. The output trace 174 is connected to a membrane probe connector pad 176 by means of a metallized via 178. Power leads (not shown) are also connected to the chip 172. With such an arrangement capacitance loading of under 2 pF is possible.
Although the very small dimension and high density with which the traces 20 and pads 36 may be located greatly enhances application and operation of the described membrane probes, even greater two dimensional freedom of probe pad location is achieved by employing multiple level membranes. With such multiple level membranes, traces can be allowed to physically cross one another on different layers and single data busses may be arranged to connect to corresponding pads in plural groups of pads, thereby enabling testing of multiple dies with one touchdown. For example, as illustrated in FIG. 8, a fragment of a membrane probe including a layer of photoceram clad on both sides with a polyimide membrane as previously described, has its outer membrane 180 formed on its outer (lower) side with a plurality of patterns of contact pads generally indicated at 182a, 182b, 182c and 182d. On the inner (or upper) side 179 of membrane 180 are formed groups of traces, such as traces 184a and 184b. The traces on the upper surface 179 may be formed directly on the membrane 180 or, as disclosed in connection with FIG. 6, may be formed on a second polyimide layer (not shown in FIG. 8) that is in direct face to face contact with layer 180. The traces on the upper surface 179 are electrically connected to traces 186 and contact pads on the lower surface by means of vias, such as vias 188, extending through the membrane 180. In this arrangement, for example, a single trace, such as trace 190, of a data bus may be connected to several pads, such as pads 190a, 190b, 190c and 190d, by means of connecting traces that cross each other (and cross other traces) on opposite sides of the non-conductive membrane 180. In the multiple level arrangement of FIG. 8 traces on both sides of the membrane are connected to peripheral probe connector pads (not shown in FIG. 8) such as pads 32 of FIGS. 1 and 2 on the inner side of the photoceram. This illustration is given only by way of example to show the simplicity with which a single line may be connected to corresponding pads on multiple chips of the wafer.
The trace pattern and contact pad pattern of each probe are determined by the arrangement of die pads to be tested. Die pads of two of such chips are illustrated at 194 and 196 in FIG. 8. For higher density of interconnecting traces the membrane probe may be made with two or more layers of mutually insulated dielectric film. With the arrangements of membrane probes illustrated herein probe pads may be located for connection to die pads at the interior of a chip for use in integrated circuit diagnostics. The described membrane probe specifically enables very high probe contact density. For example, a three inch diameter membrane probe may be formed with up to 360 contact pads, whereas a six inch diameter membrane probe may be formed with more than 360 contact pads. Using the metal-on-elastomer flexible connector to connect the membrane probe to the test fixture, and utilizing the vacuum clamping of the membrane probe greatly facilitate the use of such high density probes.
It will be readily appreciated that the test probe and fixture and the method of testing described herein have a great many advantages. These advantages include the availability of densities of probe contact pads in the order of 360 contact pads or more on a single six inch probe, the ability to precisely control impedance of transmission lines for superior high frequency performance, the availability of thin film terminating resistors located immediately adjacent die pads for superior high frequency performance, and the soft contact provided by the probe contact pads which causes less damage to die pads than needle or blade contacts of prior probe cards. Further advantages include the visual clarity of the membrane which allows precise alignment of the probe contact pads to semiconductor pads and use and manufacture of probe pads of less than 1 mil in dimension. In addition, virtually unrestricted two dimensional freedom of probe contact locations is available using photolithographic definition techniques and multiple level membranes. This allows probe pads located in the interior of a die to be contacted by probe pads for use in diagnostics. Multiple groups of die pads can be tested in a single touchdown. Burn-in of a wafer circuit can be performed using the described membrane probe.
The temperature coefficient of resistance of the membrane can be matched to the temperature coefficient of resistance of a wafer under test so that testing over an extended range of temperatures is possible. Without such matching of temperature coefficients of resistance, a different expansion of the test probe membrane and the wafer would cause serious misalignment or require use of different probes at different temperatures.
Manufacture of the probes described herein is much faster, more efficient, and less expensive since once the appropriate dies and masks for the photolithographic techniques employed have been manufactured it is relatively simple to manufacture a large number of membrane probes. This is to be distinguished from those probes employing needles and blades which must be individually adjusted on each probe. The self planarizing of the described flexible membrane probe provides a soft contact between the contact pads of the probe and the die pads, causing considerably decreased wear on the probe contacts which require only routine cleaning and need not be frequently adjusted and readjusted.
With the described membrane probe alignment accuracy of 1 to 2 microns is possible with a high accuracy probe station that enables precision X,Y motion of the wafer under test. Having such high accuracy alignment, it is feasible to make and employ probe pads of less than 1 mil.
The membrane probe test fixture, which is a relatively high cost item, does not have to be duplicated for each different probe card since many different types of probe cards may be employed and readily attached to or detached from the fixture, which is adapted to fully automatic testing as described. The quick disconnect connector element employing metal-on-elastomer technology firmly contacts the connector pads on the inner side of the membrane probe and facilitates rapid mechanical and electrical interengagement and disengagement of the membrane probe with the fixture.

Claims (17)

What is claimed is:
1. A method of testing a plurality of circuit chips formed on an integrated circuit processing wafer, each one of said plurality of circuit chips being of a certain configuration and each individually including a respective plurality of electrical test contact pads in a certain pattern, said method comprising steps of:
providing a test probe configured for testing a circuit chip of said certain configuration, configuring said test probe to include a substrate defining an aperture, providing a transparent taut membrane spanning said aperture, disposing plural electrical contact pads on a lower side of said membrane, disposing said plural electrical contact pads in a pattern matching said certain pattern, and electrical interface structure extending on said test probe from said electrical contact pads to an upper side of said test probe;
storing said test probe in a cassette;
providing a test fixture having electrical interface with a testing circuit;
using a pick and place machine to extract said test probe alone from said cassette, and moving said test probe alone to said test fixture;
simultaneously attaching said test probe to said test fixture both mechanically and electrically, using attachment of said test probe to said test fixture to interface said electrical contact pads with said testing circuit;
using a pick and place machine to position a processing wafer to be tested adjacent to said test fixture;
relatively moving said processing wafer and test fixture to cause said electrical contact pads of said test probe to electrically contact said electrical test contact pads of a circuit chip of said certain configuration, and using said test circuit to electrically test said circuit chip; and
relatively moving said processing wafer and test fixture to successively electrically contact and test each of said plurality of circuit chips on said processing wafer which are of said certain configuration.
2. The method of claim 1 wherein said step of providing a test probe configured for testing circuit chips of said certain configuration includes the steps of forming said electrical interface structure to include a pattern of electrically conductive traces on said transparent membrane, and forming said plurality of contact pads each on one of said conductive traces.
3. The method of claim 2 wherein said step of providing said test probe includes the steps of forming said substrate as a rigid disk-like body in size and shape like that of a processing wafer, forming said aperture in said substrate, forming said membrane on said substrate, spanning said aperture with said membrane, forming said pattern of conductive traces and said contact pads on a lower side of said membrane, and forming a plurality of test probe connector pads on an upper side of said substrate and in electrical connection with said electrical interface structure.
4. The method of claim 3 wherein said step of forming said substrate includes forming a flat on said substrate for automatic orientation of said test probe by said pick and place machine.
5. The method of claim 3 wherein said step of forming said substrate includes providing machine-readable identifying indicia on said substrate for automatic identification by said pick and place machine.
6. The method of claim 3 wherein said step of providing said test probe further includes the steps of forming said electrical interface structure to include a plurality of electrically conductive vias, each via extending from one of said pattern of traces to a portion of said electrical interface structure connecting individually with one of said plurality of probe connector pads.
7. The method of claim 3 wherein said step of providing said test probe includes the steps of photolithographically forming said traces, said contact pads, and said probe connector pads.
8. The method of claim 1 wherein said step of providing said test fixture includes the steps of forming a test fixture housing having a peripheral seating area shaped to receive said test probe, and providing electrical contact elements extending from said peripheral seating area and providing electrical interface with said testing circuit, and wherein said step of attaching said test probe to said test fixture comprises positioning a portion of said test probe at said seating area.
9. The method of claim 8 wherein said step of providing a test fixture also includes the step of securing to said seating area an elastomeric member having a plurality of said electrical contact elements, and configuring and arranging said plurality of electrical contact elements to contact said electrical contact pads of said probe.
10. The method of claim 1 additionally including the steps of testing other circuit chip on said fabrication wafer, which other circuit chip is of another configuration different than said certain configuration, and said circuit chip of said another configuration individually including a respective plurality of electrical test contact pads in another pattern, said method including steps of:
moving said test probe alone from said test fixture, and using a pick and place machine to insert said test probe alone into said cassette;
providing another test probe in said cassette, configuring said another test probe for testing a circuit chip of said another configuration, providing said another test probe with a respective substrate defining an aperture, providing a respective transparent membrane spanning said aperture, disposing plural respective electrical contact pads on said respective membrane of said another test probe on a lower side of said membrane, disposing said plural electrical contact pads of said another test probe on said respective membrane in a second pattern matching said another pattern, and respective electrical interface structure extending on said another test probe from said electrical contact pads to an upper side of said another test probe;
using said pick and place machine to extract said another test probe alone from said cassette, and moving said another test probe alone to said test fixture;
simultaneously attaching said another test probe to said test fixture both mechanically and electrically, and using attachment of said another test probe to said test fixture to interface said electrical contact pads of said another test probe with said testing circuit;
relatively moving said processing wafer and test fixture to cause said electrical contact pads of said another test probe to electrically contact said electrical test contact pads of a circuit chip of said other configuration, and using said test circuit to electrically test said circuit chip; and
relatively moving said processing wafer and test fixture to successively electrically contact and test each of said circuit chips on said processing wafer which are of said another configuration.
11. A method of testing a circuit chip formed on an integrated circuit processing wafer, the integrated circuit processing wafer having a size, shape, and edge section means for distinguishing rotational position of said processing wafer, said circuit chip including a plurality of electrical test contact pads in a certain pattern, said method comprising steps of:
providing a test probe configured for testing said circuit chip, providing a disk-like rigid substrate for said test probe, said substrate being configured in the same size and same shape, and with the same edge section means as said integrated circuit wafer so that said test probe can be handled and manipulated alone for rotational position by a pick and place machine configured to handle and rotationally manipulate integrated circuit processing wafers, and further configuring said test probe to define an aperture, attaching a transparent taut membrane to said test probe, using said membrane to span said aperture, disposing plural electrical contact pads on a lower side of said membrane in a pattern matching said certain pattern of said test contact pads, and providing electrical interface structure extending on said test probe from said electrical contact pads to an upper side of said test probe;
storing said test probe in a cassette;
using a pick and place machine to extract said test probe alone from said cassette, and moving said test probe alone to a test fixture;
attaching said test probe to said test fixture both mechanically and electrically, using attachment of said test probe to said test fixture to interface said electrical contact pads with a testing circuit;
relatively moving said processing wafer and test fixture to cause said electrical contact pads of said test probe to electrically contact said electrical test contact pads of said circuit chip, and using said test circuit to electrically test said circuit chip.
12. The method of claim 11 further including the steps of forming said electrical interface structure to include a pattern of electrically conductive traces on said transparent membrane, and forming said plurality of contact pads each on a respective one of said conductive traces.
13. The method of claim 12 further including the steps of forming a plurality of test probe connector pads on an upper side of said substrate and in electrical connection with said electrical interface structure.
14. The method of claim 13 wherein said step of providing said test probe further includes the steps of forming said electrical interface structure to include a plurality of electrically conductive vias, each via extending from one trace of said pattern of traces to a portion of said electrical interface structure connecting individually with one of said plurality of test probe connector pads.
15. The method of claim 11 wherein said step of providing said substrate includes forming said edge section means to include a flat on said substrate for automatic orientation of said test probe by said pick and place machine.
16. The method of claim 11 wherein said step of providing said test probe includes the steps of photolithographically forming said traces, said contact pads, and said probe connector pads.
17. The method of claim 11 additionally including the steps of testing another circuit chip on said processing wafer, which another circuit chip is of another configuration different than said circuit chip and includes a respective plurality of electrical test contact pads in another pattern, said method including steps of:
moving said test probe alone from said test fixture, and using a pick and place machine to insert said test probe alone into said cassette;
providing another test probe in a cassette, which said another test probe is configured to test said integrated circuit chip of said another configuration;
providing said another test probe with a respective disklike rigid substrate in the same size and same shape, and with the same edge section means as said integrated circuit wafer so that said another test probe alone can be handled and manipulated for rotational position by a pick and place machine configured to handle and rotationally manipulate integrated circuit processing wafers, and further configuring said another test probe to define a respective aperture, providing a respective transparent membrane on said another test probe, using said respective membrane to span said aperture, providing plural respective electrical contact pads carried on said respective membrane of said another test probe and disposed on a lower side of said respective membrane, said plural electrical contact pads of said another test probe being disposed on said respective membrane in a second pattern matching said pattern of test contact pads on said another integrated circuit chip, and respective electrical interface structure extending on said another test probe from said electrical contact pads to an upper side of said another test probe;
using said pick and place machine to extract said another test probe alone from said cassette, and moving said another test probe alone to said test fixture;
simultaneously attaching said another test probe to said test fixture both mechanically and electrically, and using attachment of said another test probe to said test fixture to interface said electrical contact pads of said another test probe with said testing circuit;
relatively moving said processing wafer and test fixture to cause said electrical contact pads of said another test probe to electrically contact said electrical test contact pads of said another circuit chip, and using said test circuit to electrically test said another circuit chip.
US07/875,881 1990-10-31 1992-04-29 Method of testing integrated circuits Expired - Lifetime US5872459A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US07/875,881 US5872459A (en) 1990-10-31 1992-04-29 Method of testing integrated circuits

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/606,676 US5148103A (en) 1990-10-31 1990-10-31 Apparatus for testing integrated circuits
US07/875,881 US5872459A (en) 1990-10-31 1992-04-29 Method of testing integrated circuits

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
US07/606,676 Division US5148103A (en) 1990-10-31 1990-10-31 Apparatus for testing integrated circuits

Publications (1)

Publication Number Publication Date
US5872459A true US5872459A (en) 1999-02-16

Family

ID=24428999

Family Applications (3)

Application Number Title Priority Date Filing Date
US07/606,676 Expired - Lifetime US5148103A (en) 1990-10-31 1990-10-31 Apparatus for testing integrated circuits
US07/875,881 Expired - Lifetime US5872459A (en) 1990-10-31 1992-04-29 Method of testing integrated circuits
US07/875,511 Expired - Lifetime US5313157A (en) 1990-10-31 1992-04-29 Probe for jesting an electrical circuit chip

Family Applications Before (1)

Application Number Title Priority Date Filing Date
US07/606,676 Expired - Lifetime US5148103A (en) 1990-10-31 1990-10-31 Apparatus for testing integrated circuits

Family Applications After (1)

Application Number Title Priority Date Filing Date
US07/875,511 Expired - Lifetime US5313157A (en) 1990-10-31 1992-04-29 Probe for jesting an electrical circuit chip

Country Status (4)

Country Link
US (3) US5148103A (en)
EP (1) EP0484141A3 (en)
JP (1) JPH04266043A (en)
IL (1) IL99591A (en)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6233184B1 (en) * 1998-11-13 2001-05-15 International Business Machines Corporation Structures for wafer level test and burn-in
US20020053734A1 (en) * 1993-11-16 2002-05-09 Formfactor, Inc. Probe card assembly and kit, and methods of making same
US6399958B1 (en) * 1998-12-09 2002-06-04 Advanced Micro Devices, Inc. Apparatus for visual inspection during device analysis
US6466008B1 (en) * 2000-10-06 2002-10-15 Hewlett-Packard Company Method for matching the lengths of signal traces
US20030199179A1 (en) * 1993-11-16 2003-10-23 Formfactor, Inc. Contact tip structure for microelectronic interconnection elements and method of making same
US20040055893A1 (en) * 2002-09-23 2004-03-25 Applied Materials, Inc. Wafer backside electrical contact for electrochemical deposition and electrochemical mechanical polishing
US20050001638A1 (en) * 2000-07-10 2005-01-06 Formfactor, Inc. Closed-grid bus architecture for wafer interconnect structure
US20060125498A1 (en) * 2004-12-15 2006-06-15 Chipmos Technologies (Bermuda) Ltd. Modularized probe card for high frequency probing
US20070018740A1 (en) * 2005-07-19 2007-01-25 Lctank Llc Flux linked LC tank circuits forming distributed clock networks
US20080196474A1 (en) * 2007-02-20 2008-08-21 Centipede Systems, Inc. Method and apparatus for aligning and/or leveling a test head
CN100424512C (en) * 2005-08-25 2008-10-08 南茂科技股份有限公司 Modular high frequency detection card
US8033838B2 (en) 1996-02-21 2011-10-11 Formfactor, Inc. Microelectronic contact structure
US20140239996A1 (en) * 2011-07-06 2014-08-28 Intel Corporation Test apparatus having a probe card and connector mechanism
US8994390B2 (en) 2011-07-06 2015-03-31 Celadon Systems, Inc. Test systems with a probe apparatus and index mechanism

Families Citing this family (147)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5917707A (en) 1993-11-16 1999-06-29 Formfactor, Inc. Flexible contact structure with an electrically conductive shell
US5589781A (en) * 1990-09-20 1996-12-31 Higgins; H. Dan Die carrier apparatus
US5495179A (en) * 1991-06-04 1996-02-27 Micron Technology, Inc. Carrier having interchangeable substrate used for testing of semiconductor dies
US5304922A (en) * 1991-08-26 1994-04-19 Hughes Aircraft Company Electrical circuit with resilient gasket support for raised connection features
DE69216730T2 (en) * 1991-08-26 1997-08-07 Hughes Aircraft Co Rigid-flexible printed circuit boards with elevations as IC test probes
JP2606554Y2 (en) * 1992-01-17 2000-11-27 株式会社東京精密 Probing equipment
JP3307470B2 (en) * 1993-04-05 2002-07-24 三菱電機株式会社 Semiconductor inspection equipment
US5371654A (en) 1992-10-19 1994-12-06 International Business Machines Corporation Three dimensional high performance interconnection package
US20050062492A1 (en) * 2001-08-03 2005-03-24 Beaman Brian Samuel High density integrated circuit apparatus, test probe and methods of use thereof
JPH06140484A (en) * 1992-10-28 1994-05-20 Nippon Telegr & Teleph Corp <Ntt> Probe card
US6058497A (en) 1992-11-20 2000-05-02 Micron Technology, Inc. Testing and burn-in of IC chips using radio frequency transmission
US5983363A (en) * 1992-11-20 1999-11-09 Micron Communications, Inc. In-sheet transceiver testing
JPH06232233A (en) * 1992-12-23 1994-08-19 Honeywell Inc Testing device of nude die
US5395253A (en) * 1993-04-29 1995-03-07 Hughes Aircraft Company Membrane connector with stretch induced micro scrub
JP3290760B2 (en) * 1993-06-30 2002-06-10 川崎マイクロエレクトロニクス株式会社 Probe test apparatus and probe test method
US5412866A (en) * 1993-07-01 1995-05-09 Hughes Aircraft Company Method of making a cast elastomer/membrane test probe assembly
US5550482A (en) * 1993-07-20 1996-08-27 Tokyo Electron Kabushiki Kaisha Probe device
JP3133872B2 (en) * 1993-09-02 2001-02-13 富士通株式会社 Rotary probe, printed board and connection device
US5744974A (en) * 1993-09-17 1998-04-28 Xilinx, Inc. Test head interface with vacuum-activated interconnection components
US5469072A (en) * 1993-11-01 1995-11-21 Motorola, Inc. Integrated circuit test system
US6525555B1 (en) * 1993-11-16 2003-02-25 Formfactor, Inc. Wafer-level burn-in and test
US6624648B2 (en) 1993-11-16 2003-09-23 Formfactor, Inc. Probe card assembly
US6246247B1 (en) 1994-11-15 2001-06-12 Formfactor, Inc. Probe card assembly and kit, and methods of using same
US5455518A (en) * 1993-11-23 1995-10-03 Hughes Aircraft Company Test apparatus for integrated circuit die
KR0140034B1 (en) * 1993-12-16 1998-07-15 모리시다 요이치 Semiconductor wafer case, connection method and apparatus, and inspection method for semiconductor integrated circuit, probe card, and its manufacturing method
JP2828410B2 (en) * 1993-12-21 1998-11-25 松下電器産業株式会社 Probe card and semiconductor chip inspection method
US5583445A (en) * 1994-02-04 1996-12-10 Hughes Aircraft Company Opto-electronic membrane probe
US5416429A (en) * 1994-05-23 1995-05-16 Wentworth Laboratories, Inc. Probe assembly for testing integrated circuits
US5500604A (en) * 1994-07-15 1996-03-19 Hughes Aircraft Company Radial tensioning lamination fixture for membrane test probe
TW273635B (en) * 1994-09-01 1996-04-01 Aesop
US5508630A (en) * 1994-09-09 1996-04-16 Board Of Regents, University Of Texas Systems Probe having a power detector for use with microwave or millimeter wave device
EP0707214A3 (en) * 1994-10-14 1997-04-16 Hughes Aircraft Co Multiport membrane probe for full-wafer testing
JP3376731B2 (en) * 1994-11-09 2003-02-10 東京エレクトロン株式会社 High frequency printed circuit board and probe card using the same
EP1408337A3 (en) * 1994-11-15 2007-09-19 FormFactor, Inc. Probe card assembly
US5557212A (en) * 1994-11-18 1996-09-17 Isaac; George L. Semiconductor test socket and contacts
US5629630A (en) * 1995-02-27 1997-05-13 Motorola, Inc. Semiconductor wafer contact system and method for contacting a semiconductor wafer
US5773986A (en) * 1995-04-03 1998-06-30 Motorola, Inc Semiconductor wafer contact system and method for contacting a semiconductor wafer
US5532608A (en) * 1995-04-06 1996-07-02 International Business Machines Corporation Ceramic probe card and method for reducing leakage current
US5642054A (en) * 1995-08-08 1997-06-24 Hughes Aircraft Company Active circuit multi-port membrane probe for full wafer testing
US5600257A (en) * 1995-08-09 1997-02-04 International Business Machines Corporation Semiconductor wafer test and burn-in
JP3135825B2 (en) 1995-09-27 2001-02-19 株式会社東芝 Probe card and probing test method for semiconductor integrated circuit using the probe card
US6118286A (en) 1995-10-10 2000-09-12 Xilinx, Inc. Semiconductor device tester-to-handler Interface board with large test area
US5705932A (en) * 1995-10-10 1998-01-06 Xilinx, Inc. System for expanding space provided by test computer to test multiple integrated circuits simultaneously
US5945837A (en) * 1995-10-10 1999-08-31 Xilinx, Inc. Interface structure for an integrated circuit device tester
JP3096234B2 (en) * 1995-10-30 2000-10-10 日東電工株式会社 Method of manufacturing probe structure
US6483328B1 (en) * 1995-11-09 2002-11-19 Formfactor, Inc. Probe card for probing wafers with raised contact elements
US5917330A (en) * 1996-01-17 1999-06-29 Miley; David M. Probe ring having electrical components affixed thereto and related apparatus and processes
US5994152A (en) 1996-02-21 1999-11-30 Formfactor, Inc. Fabricating interconnects and tips using sacrificial substrates
US6236445B1 (en) 1996-02-22 2001-05-22 Hughes Electronics Corporation Method for making topographic projections
US5914613A (en) 1996-08-08 1999-06-22 Cascade Microtech, Inc. Membrane probing system with local contact scrub
US5707881A (en) * 1996-09-03 1998-01-13 Motorola, Inc. Test structure and method for performing burn-in testing of a semiconductor product wafer
US6603322B1 (en) 1996-12-12 2003-08-05 Ggb Industries, Inc. Probe card for high speed testing
US5949246A (en) * 1997-01-28 1999-09-07 International Business Machines Test head for applying signals in a burn-in test of an integrated circuit
US6201402B1 (en) 1997-04-08 2001-03-13 Celadon Systems, Inc. Probe tile and platform for large area wafer probing
US6586954B2 (en) * 1998-02-10 2003-07-01 Celadon Systems, Inc. Probe tile for probing semiconductor wafer
US6137299A (en) * 1997-06-27 2000-10-24 International Business Machines Corporation Method and apparatus for testing integrated circuit chips
WO1999004273A1 (en) * 1997-07-15 1999-01-28 Wentworth Laboratories, Inc. Probe station with multiple adjustable probe supports
US6181145B1 (en) * 1997-10-13 2001-01-30 Matsushita Electric Industrial Co., Ltd. Probe card
US6518779B1 (en) * 1997-10-20 2003-02-11 Matsushita Electrical Industrial Do., Ltd. Probe card
US5990695A (en) * 1998-01-16 1999-11-23 Packard Hughes Interconnect Co. Membrane test probe
US6119255A (en) 1998-01-21 2000-09-12 Micron Technology, Inc. Testing system for evaluating integrated circuits, a burn-in testing system, and a method for testing an integrated circuit
US5973394A (en) * 1998-01-23 1999-10-26 Kinetrix, Inc. Small contactor for test probes, chip packaging and the like
US6720501B1 (en) 1998-04-14 2004-04-13 Formfactor, Inc. PC board having clustered blind vias
US5992242A (en) * 1998-05-04 1999-11-30 Lsi Logic Corporation Silicon wafer or die strength test fixture using high pressure fluid
US6130546A (en) * 1998-05-11 2000-10-10 Lsi Logic Corporation Area array (flip chip) probe card
US6256882B1 (en) 1998-07-14 2001-07-10 Cascade Microtech, Inc. Membrane probing system
US6252414B1 (en) 1998-08-26 2001-06-26 International Business Machines Corporation Method and apparatus for testing circuits having different configurations with a single test fixture
US6441315B1 (en) * 1998-11-10 2002-08-27 Formfactor, Inc. Contact structures with blades having a wiping motion
US6420884B1 (en) * 1999-01-29 2002-07-16 Advantest Corp. Contact structure formed by photolithography process
JP2000180469A (en) * 1998-12-18 2000-06-30 Fujitsu Ltd Contactor for semiconductor device, tester using contactor for semiconductor device, testing method using contactor for semiconductor device and method for cleaning contactor for semiconductor device
JP3565086B2 (en) * 1999-04-16 2004-09-15 富士通株式会社 Probe card and method for testing semiconductor device
US6710609B2 (en) * 2002-07-15 2004-03-23 Nanonexus, Inc. Mosaic decal probe
US7382142B2 (en) 2000-05-23 2008-06-03 Nanonexus, Inc. High density interconnect system having rapid fabrication cycle
US7349223B2 (en) 2000-05-23 2008-03-25 Nanonexus, Inc. Enhanced compliant probe card systems having improved planarity
US6812718B1 (en) * 1999-05-27 2004-11-02 Nanonexus, Inc. Massively parallel interface for electronic circuits
US7247035B2 (en) * 2000-06-20 2007-07-24 Nanonexus, Inc. Enhanced stress metal spring contactor
US6578264B1 (en) 1999-06-04 2003-06-17 Cascade Microtech, Inc. Method for constructing a membrane probe using a depression
US6714121B1 (en) * 1999-08-09 2004-03-30 Micron Technology, Inc. RFID material tracking method and apparatus
US6262582B1 (en) 1999-10-15 2001-07-17 International Business Machines Corporation Mechanical fixture for holding electronic devices under test showing adjustments in multiple degrees of freedom
US6255834B1 (en) * 1999-10-21 2001-07-03 Dell Usa, L.P. Test fixture having a floating self-centering connector
US6838890B2 (en) * 2000-02-25 2005-01-04 Cascade Microtech, Inc. Membrane probing system
US7262611B2 (en) 2000-03-17 2007-08-28 Formfactor, Inc. Apparatuses and methods for planarizing a semiconductor contactor
US6734690B1 (en) * 2000-04-29 2004-05-11 Hewlett-Packard Development Company, L.P. Back pressure test fixture to allow probing of integrated circuit package signals
US7952373B2 (en) 2000-05-23 2011-05-31 Verigy (Singapore) Pte. Ltd. Construction structures and manufacturing processes for integrated circuit wafer probe card assemblies
US7579848B2 (en) 2000-05-23 2009-08-25 Nanonexus, Inc. High density interconnect system for IC packages and interconnect assemblies
US6515499B1 (en) * 2000-09-28 2003-02-04 Teradyne, Inc. Modular semiconductor tester interface assembly for high performance coaxial connections
US6441607B1 (en) * 2000-12-01 2002-08-27 N&K Technology, Inc. Apparatus for docking a floating test stage in a terrestrial base
DE10143173A1 (en) 2000-12-04 2002-06-06 Cascade Microtech Inc Wafer probe has contact finger array with impedance matching network suitable for wide band
US6856150B2 (en) * 2001-04-10 2005-02-15 Formfactor, Inc. Probe card with coplanar daughter card
US6729019B2 (en) * 2001-07-11 2004-05-04 Formfactor, Inc. Method of manufacturing a probe card
JP2004534957A (en) * 2001-07-11 2004-11-18 フォームファクター,インコーポレイテッド Method of manufacturing probe card
JP4798595B2 (en) * 2001-08-07 2011-10-19 東京エレクトロン株式会社 Probe card transfer device and probe card transfer method
AU2002327490A1 (en) 2001-08-21 2003-06-30 Cascade Microtech, Inc. Membrane probing system
US6867607B2 (en) * 2002-01-22 2005-03-15 Sychip, Inc. Membrane test method and apparatus for integrated circuit testing
US6965244B2 (en) * 2002-05-08 2005-11-15 Formfactor, Inc. High performance probe system
US6867608B2 (en) 2002-07-16 2005-03-15 Aehr Test Systems Assembly for electrically connecting a test component to a testing machine for testing electrical circuits on the test component
WO2004008163A2 (en) * 2002-07-16 2004-01-22 Aehr Test Systems Assembly for connecting a test device to an object to be tested
US20040012405A1 (en) * 2002-07-19 2004-01-22 Chipmos Technologies (Bermuda) Ltd. Probe card with full wafer contact configuration
US7102367B2 (en) * 2002-07-23 2006-09-05 Fujitsu Limited Probe card and testing method of semiconductor chip, capacitor and manufacturing method thereof
US7122760B2 (en) * 2002-11-25 2006-10-17 Formfactor, Inc. Using electric discharge machining to manufacture probes
US6945827B2 (en) * 2002-12-23 2005-09-20 Formfactor, Inc. Microelectronic contact structure
US20040177995A1 (en) * 2003-03-12 2004-09-16 Nexcleon, Inc. Structures for testing circuits and methods for fabricating the structures
US7057404B2 (en) 2003-05-23 2006-06-06 Sharp Laboratories Of America, Inc. Shielded probe for testing a device under test
US6853205B1 (en) * 2003-07-17 2005-02-08 Chipmos Technologies (Bermuda) Ltd. Probe card assembly
US7427868B2 (en) 2003-12-24 2008-09-23 Cascade Microtech, Inc. Active wafer probe
US20050162177A1 (en) * 2004-01-28 2005-07-28 Chou Arlen L. Multi-signal single beam probe
CN102253251B (en) * 2004-09-03 2014-04-02 塞莱敦体系股份有限公司 Replaceable probe apparatus for probing semiconductor wafer
US7420381B2 (en) 2004-09-13 2008-09-02 Cascade Microtech, Inc. Double sided probing structures
CN100360943C (en) * 2004-11-29 2008-01-09 华硕电脑股份有限公司 Detector capable of preventing overpressure
US7535247B2 (en) 2005-01-31 2009-05-19 Cascade Microtech, Inc. Interface for testing semiconductors
US7656172B2 (en) 2005-01-31 2010-02-02 Cascade Microtech, Inc. System for testing semiconductors
US7170277B2 (en) * 2005-04-12 2007-01-30 Texas Instruments Incorporated Shield for tester load boards
US7733106B2 (en) * 2005-09-19 2010-06-08 Formfactor, Inc. Apparatus and method of testing singulated dies
US20070089540A1 (en) * 2005-10-26 2007-04-26 Motorola, Inc. Method and apparatus to facilitate testing of printed semiconductor devices
WO2007086064A2 (en) * 2006-01-27 2007-08-02 Camtek Ltd Diced wafer adaptor and a method for transferring a diced wafer
US7562617B2 (en) * 2006-05-15 2009-07-21 Centipede Systems, Inc. Mounting apparatus
US7403028B2 (en) 2006-06-12 2008-07-22 Cascade Microtech, Inc. Test structure and probe for differential signals
US7764072B2 (en) 2006-06-12 2010-07-27 Cascade Microtech, Inc. Differential signal probing system
US7723999B2 (en) 2006-06-12 2010-05-25 Cascade Microtech, Inc. Calibration structures for differential signal probing
US8034526B2 (en) * 2006-09-07 2011-10-11 Ricoh Company Limited Method for manufacturing toner and toner
US7728609B2 (en) * 2007-05-25 2010-06-01 Celadon Systems, Inc. Replaceable probe apparatus for probing semiconductor wafer
US7876114B2 (en) 2007-08-08 2011-01-25 Cascade Microtech, Inc. Differential waveguide probe
US7888955B2 (en) * 2007-09-25 2011-02-15 Formfactor, Inc. Method and apparatus for testing devices using serially controlled resources
US7977959B2 (en) 2007-09-27 2011-07-12 Formfactor, Inc. Method and apparatus for testing devices using serially controlled intelligent switches
US20090164931A1 (en) * 2007-12-19 2009-06-25 Formfactor, Inc. Method and Apparatus for Managing Test Result Data Generated by a Semiconductor Test System
US20090224793A1 (en) * 2008-03-07 2009-09-10 Formfactor, Inc. Method And Apparatus For Designing A Custom Test System
US8122309B2 (en) * 2008-03-11 2012-02-21 Formfactor, Inc. Method and apparatus for processing failures during semiconductor device testing
US8095841B2 (en) * 2008-08-19 2012-01-10 Formfactor, Inc. Method and apparatus for testing semiconductor devices with autonomous expected value generation
US7944225B2 (en) 2008-09-26 2011-05-17 Formfactor, Inc. Method and apparatus for providing a tester integrated circuit for testing a semiconductor device under test
US7888957B2 (en) 2008-10-06 2011-02-15 Cascade Microtech, Inc. Probing apparatus with impedance optimized interface
US8410806B2 (en) 2008-11-21 2013-04-02 Cascade Microtech, Inc. Replaceable coupon for a probing apparatus
US8674715B2 (en) 2010-01-20 2014-03-18 Celadon Systems, Inc. Test apparatus having a probe core with a twist lock mechanism
US20140312475A1 (en) * 2013-04-19 2014-10-23 Lsi Corporation Die reuse in electrical circuits
TWI481876B (en) * 2013-12-13 2015-04-21 Mpi Corp Probe module (3)
CN111413519B (en) 2015-02-26 2023-11-07 沙朗特有限责任公司 Multi-integrated tip scanning probe microscope
EP3262425A1 (en) 2015-02-26 2018-01-03 Xallent, LLC Systems and methods for manufacturing nano-electro-mechanical-system probes
US9656420B2 (en) * 2015-04-30 2017-05-23 International Business Machines Corporation Bondline control fixture and method of affixing first and second components
JP6770798B2 (en) * 2015-11-20 2020-10-21 日本電子材料株式会社 Contact probe
US10254312B2 (en) * 2016-01-13 2019-04-09 Avago Technologies International Sales Pte. Limited Transmission line coupler for testing of integrated circuits
WO2017156245A1 (en) 2016-03-09 2017-09-14 Xallent, LLC Functional prober chip
US9934415B1 (en) 2017-04-20 2018-04-03 Xerox Corporation Handheld reader having transparent circuit board for alignment of multiple electrical contacts
KR102398973B1 (en) * 2017-07-21 2022-05-17 엔테그리스, 아이엔씨. Container for holding and transporting a reticle having a transparent window assembly
US10663484B2 (en) * 2018-02-14 2020-05-26 Xallent, LLC Multiple integrated tips scanning probe microscope with pre-alignment components
TWI681495B (en) * 2018-08-15 2020-01-01 致茂電子股份有限公司 Rotating buffer station for chip
US11275106B2 (en) * 2018-10-05 2022-03-15 Celadon Systems, Inc. High voltage probe card system
CN112002652B (en) * 2020-07-21 2023-10-20 中电科工程建设有限公司 Control method for electroplating process yield in chip manufacturing process
US11792933B2 (en) * 2021-07-29 2023-10-17 Fermi Research Alliance, Llc Connector interface assembly for enclosed vessels and associated systems and methods

Citations (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4161692A (en) * 1977-07-18 1979-07-17 Cerprobe Corporation Probe device for integrated circuit wafers
US4518914A (en) * 1981-08-03 1985-05-21 Japan Electronic Materials Corportion Testing apparatus of semiconductor wafers
JPS62169341A (en) * 1986-01-21 1987-07-25 Tokyo Electron Ltd Automatic replacing prober for probe card
EP0230348A2 (en) * 1986-01-07 1987-07-29 Hewlett-Packard Company Test probe
US4697143A (en) * 1984-04-30 1987-09-29 Cascade Microtech, Inc. Wafer probe
JPS62263647A (en) * 1986-05-12 1987-11-16 Tokyo Electron Ltd Prober for wafer
US4721198A (en) * 1985-11-13 1988-01-26 Ando Electric Co., Ltd. Probe card clamping and changing mechanism
EP0259163A2 (en) * 1986-09-05 1988-03-09 Tektronix, Inc. Semiconductor wafer probe
US4733172A (en) * 1986-03-08 1988-03-22 Trw Inc. Apparatus for testing I.C. chip
US4783625A (en) * 1986-08-21 1988-11-08 Tektronix, Inc. Wideband high impedance card mountable probe
US4786867A (en) * 1986-09-02 1988-11-22 Canon Kabushiki Kaisha Wafer prober
US4791363A (en) * 1987-09-28 1988-12-13 Logan John K Ceramic microstrip probe blade
EP0294939A2 (en) * 1987-06-09 1988-12-14 Tektronix Inc. Multiple lead probe for integrated circuits in wafer form
EP0304868A2 (en) * 1987-08-28 1989-03-01 Tektronix Inc. Multiple lead probe for integrated circuits in wafer form
US4820976A (en) * 1987-11-24 1989-04-11 Advanced Micro Devices, Inc. Test fixture capable of electrically testing an integrated circuit die having a planar array of contacts
US4849689A (en) * 1988-11-04 1989-07-18 Cascade Microtech, Inc. Microwave wafer probe having replaceable probe tip
WO1989011659A1 (en) * 1988-05-16 1989-11-30 Leedy Glen J Novel method of making, testing and test device for integrated circuits
US4922192A (en) * 1988-09-06 1990-05-01 Unisys Corporation Elastic membrane probe
US4928061A (en) * 1989-03-29 1990-05-22 International Business Machines Corporation Multi-layer printed circuit board
US4943767A (en) * 1986-08-21 1990-07-24 Tokyo Electron Limited Automatic wafer position aligning method for wafer prober
US4950982A (en) * 1987-11-30 1990-08-21 Tokyo Electron Limited Electric probing test machine
US4972143A (en) * 1988-11-30 1990-11-20 Hughes Aircraft Company Diaphragm test probe
US5027063A (en) * 1990-04-24 1991-06-25 John Fluke Mfg. Co., Inc. Vacuum-actuated test fixture for testing electronic components

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS499976A (en) * 1972-05-15 1974-01-29
JPS5339843Y2 (en) * 1974-07-29 1978-09-27
JPS5333504U (en) * 1976-08-26 1978-03-24
JPS5440082A (en) * 1977-09-05 1979-03-28 Toshiba Corp Semiconductor test device
JPS5599734A (en) * 1979-01-26 1980-07-30 Hitachi Ltd Pattern-sheet for characteristic test of semiconductor element
JPS5932740A (en) * 1981-10-30 1984-02-22 Matsushita Electric Works Ltd Bag frame construction of pit type kotatsu (foot warmer)
JPS593581U (en) * 1982-06-30 1984-01-11 宇呂電子工業株式会社 High frequency shielding metal case for cable television
EP0107323A1 (en) * 1982-09-14 1984-05-02 Accutest Corporation Connector apparatus
US4649339A (en) * 1984-04-25 1987-03-10 Honeywell Inc. Integrated circuit interface
JPH0666030B2 (en) * 1984-07-04 1994-08-24 工業技術院長 Photosensitive resin composition for screen plate making
US4891585A (en) * 1986-09-05 1990-01-02 Tektronix, Inc. Multiple lead probe for integrated circuits in wafer form
JPH0740578B2 (en) * 1987-05-30 1995-05-01 東京エレクトロン株式会社 Wafer prober
JP2703904B2 (en) * 1987-08-26 1998-01-26 日本電気株式会社 Probe substrate for semiconductor integrated circuit measurement
US5034685A (en) * 1988-05-16 1991-07-23 Leedy Glenn J Test device for testing integrated circuits
US5012187A (en) * 1989-11-03 1991-04-30 Motorola, Inc. Method for parallel testing of semiconductor devices
US5090118A (en) * 1990-07-31 1992-02-25 Texas Instruments Incorporated High performance test head and method of making

Patent Citations (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4161692A (en) * 1977-07-18 1979-07-17 Cerprobe Corporation Probe device for integrated circuit wafers
US4518914A (en) * 1981-08-03 1985-05-21 Japan Electronic Materials Corportion Testing apparatus of semiconductor wafers
US4697143A (en) * 1984-04-30 1987-09-29 Cascade Microtech, Inc. Wafer probe
US4721198A (en) * 1985-11-13 1988-01-26 Ando Electric Co., Ltd. Probe card clamping and changing mechanism
EP0230348A2 (en) * 1986-01-07 1987-07-29 Hewlett-Packard Company Test probe
JPS62169341A (en) * 1986-01-21 1987-07-25 Tokyo Electron Ltd Automatic replacing prober for probe card
US4733172A (en) * 1986-03-08 1988-03-22 Trw Inc. Apparatus for testing I.C. chip
JPS62263647A (en) * 1986-05-12 1987-11-16 Tokyo Electron Ltd Prober for wafer
US4943767A (en) * 1986-08-21 1990-07-24 Tokyo Electron Limited Automatic wafer position aligning method for wafer prober
US4783625A (en) * 1986-08-21 1988-11-08 Tektronix, Inc. Wideband high impedance card mountable probe
US4786867A (en) * 1986-09-02 1988-11-22 Canon Kabushiki Kaisha Wafer prober
EP0259163A2 (en) * 1986-09-05 1988-03-09 Tektronix, Inc. Semiconductor wafer probe
EP0294939A2 (en) * 1987-06-09 1988-12-14 Tektronix Inc. Multiple lead probe for integrated circuits in wafer form
EP0304868A2 (en) * 1987-08-28 1989-03-01 Tektronix Inc. Multiple lead probe for integrated circuits in wafer form
US4791363A (en) * 1987-09-28 1988-12-13 Logan John K Ceramic microstrip probe blade
US4820976A (en) * 1987-11-24 1989-04-11 Advanced Micro Devices, Inc. Test fixture capable of electrically testing an integrated circuit die having a planar array of contacts
US4950982A (en) * 1987-11-30 1990-08-21 Tokyo Electron Limited Electric probing test machine
WO1989011659A1 (en) * 1988-05-16 1989-11-30 Leedy Glen J Novel method of making, testing and test device for integrated circuits
US4922192A (en) * 1988-09-06 1990-05-01 Unisys Corporation Elastic membrane probe
US4849689A (en) * 1988-11-04 1989-07-18 Cascade Microtech, Inc. Microwave wafer probe having replaceable probe tip
US4972143A (en) * 1988-11-30 1990-11-20 Hughes Aircraft Company Diaphragm test probe
US4928061A (en) * 1989-03-29 1990-05-22 International Business Machines Corporation Multi-layer printed circuit board
US5027063A (en) * 1990-04-24 1991-06-25 John Fluke Mfg. Co., Inc. Vacuum-actuated test fixture for testing electronic components

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
1989 Proceedings 39th Electronic Components Conference, May 1989, pp. 71 77, Houston, US; J.A.Fulton et al., Electrical and Mechanical Properties of a Metal Filled Polymer Composite for Interconnection and Testing Applications . *
1989 Proceedings 39th Electronic Components Conference, May 1989, pp. 71-77, Houston, US; J.A.Fulton et al., "Electrical and Mechanical Properties of a Metal-Filled Polymer Composite for Interconnection and Testing Applications".
Patent Abstracts of Japan, vol. 12, No. 9 (E 572) 12 Jan. 1988, & JP A 62169341 (Tokyo Electron) 25 Jul. 1987, Abstract only. *
Patent Abstracts of Japan, vol. 12, No. 9 (E-572) 12 Jan. 1988, & JP -A-62169341 (Tokyo Electron) 25 Jul. 1987, Abstract only.

Cited By (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020053734A1 (en) * 1993-11-16 2002-05-09 Formfactor, Inc. Probe card assembly and kit, and methods of making same
US8373428B2 (en) 1993-11-16 2013-02-12 Formfactor, Inc. Probe card assembly and kit, and methods of making same
US20030199179A1 (en) * 1993-11-16 2003-10-23 Formfactor, Inc. Contact tip structure for microelectronic interconnection elements and method of making same
US8033838B2 (en) 1996-02-21 2011-10-11 Formfactor, Inc. Microelectronic contact structure
US6233184B1 (en) * 1998-11-13 2001-05-15 International Business Machines Corporation Structures for wafer level test and burn-in
US6399958B1 (en) * 1998-12-09 2002-06-04 Advanced Micro Devices, Inc. Apparatus for visual inspection during device analysis
US7508227B2 (en) * 2000-07-10 2009-03-24 Formfactor, Inc. Closed-grid bus architecture for wafer interconnect structure
US7960990B2 (en) 2000-07-10 2011-06-14 Formfactor, Inc. Closed-grid bus architecture for wafer interconnect structure
US7276922B2 (en) * 2000-07-10 2007-10-02 Formfactor, Inc. Closed-grid bus architecture for wafer interconnect structure
US20080024143A1 (en) * 2000-07-10 2008-01-31 Formfactor, Inc. Closed-grid bus architecture for wafer interconnect structure
US20050001638A1 (en) * 2000-07-10 2005-01-06 Formfactor, Inc. Closed-grid bus architecture for wafer interconnect structure
US20100264947A1 (en) * 2000-07-10 2010-10-21 Formfactor, Inc. Closed-grid bus architecture for wafer interconnect structure
US6466008B1 (en) * 2000-10-06 2002-10-15 Hewlett-Packard Company Method for matching the lengths of signal traces
US20040055893A1 (en) * 2002-09-23 2004-03-25 Applied Materials, Inc. Wafer backside electrical contact for electrochemical deposition and electrochemical mechanical polishing
US7088118B2 (en) * 2004-12-15 2006-08-08 Chipmos Technologies (Bermuda) Ltd. Modularized probe card for high frequency probing
US20060125498A1 (en) * 2004-12-15 2006-06-15 Chipmos Technologies (Bermuda) Ltd. Modularized probe card for high frequency probing
US20070018740A1 (en) * 2005-07-19 2007-01-25 Lctank Llc Flux linked LC tank circuits forming distributed clock networks
CN100424512C (en) * 2005-08-25 2008-10-08 南茂科技股份有限公司 Modular high frequency detection card
US20080196474A1 (en) * 2007-02-20 2008-08-21 Centipede Systems, Inc. Method and apparatus for aligning and/or leveling a test head
US20100243071A1 (en) * 2007-02-20 2010-09-30 Centipede Systems, Inc. Method and Apparatus for Aligning and/or Leveling a Test Head
US8348252B2 (en) 2007-02-20 2013-01-08 Centipede Systems, Inc. Method and apparatus for aligning and/or leveling a test head
US7764076B2 (en) 2007-02-20 2010-07-27 Centipede Systems, Inc. Method and apparatus for aligning and/or leveling a test head
US20140239996A1 (en) * 2011-07-06 2014-08-28 Intel Corporation Test apparatus having a probe card and connector mechanism
US8994390B2 (en) 2011-07-06 2015-03-31 Celadon Systems, Inc. Test systems with a probe apparatus and index mechanism
US9018966B2 (en) 2011-07-06 2015-04-28 Celadon Systems, Inc. Test apparatus having a probe card and connector mechanism
US9024651B2 (en) * 2011-07-06 2015-05-05 Celadon Systems, Inc. Test apparatus having a probe card and connector mechanism
US9726694B2 (en) 2011-07-06 2017-08-08 Celadon Systems, Inc. Test systems with a probe apparatus and index mechanism
US10145863B2 (en) 2011-07-06 2018-12-04 Celadon Systems, Inc. Test systems with a probe apparatus and index mechanism

Also Published As

Publication number Publication date
US5148103A (en) 1992-09-15
EP0484141A2 (en) 1992-05-06
JPH04266043A (en) 1992-09-22
EP0484141A3 (en) 1992-12-16
IL99591A0 (en) 1992-08-18
IL99591A (en) 1996-10-16
US5313157A (en) 1994-05-17

Similar Documents

Publication Publication Date Title
US5872459A (en) Method of testing integrated circuits
US5623214A (en) Multiport membrane probe for full-wafer testing
US5412866A (en) Method of making a cast elastomer/membrane test probe assembly
US5642054A (en) Active circuit multi-port membrane probe for full wafer testing
US4623839A (en) Probe device for testing an integrated circuit
US4912399A (en) Multiple lead probe for integrated circuits in wafer form
US4523144A (en) Complex probe card for testing a semiconductor wafer
US4518914A (en) Testing apparatus of semiconductor wafers
US5264787A (en) Rigid-flex circuits with raised features as IC test probes
US5461326A (en) Self leveling and self tensioning membrane test probe
US4980637A (en) Force delivery system for improved precision membrane probe
EP1411360A2 (en) Method and probe card for testing semiconductor system
US5629630A (en) Semiconductor wafer contact system and method for contacting a semiconductor wafer
JP2003506667A (en) Segment contactor
KR20090029806A (en) Sawing tile corners on probe card substrates
EP1155331A1 (en) Text probe interface assembly and manufacture method
EP0226995A2 (en) Multiple lead probe for integrated circuits
EP0298219A2 (en) Method and apparatus for testing unpackaged integrated circuits in a hybrid circuit environment
US4488111A (en) Coupling devices for operations such as testing
US5990695A (en) Membrane test probe
JPH10107100A (en) Probe card with connector
WO2001088555A2 (en) Low compliance tester interface
WO1998018015A1 (en) Apparatus for testing of printed circuit boards
US4973256A (en) Device under test interface board and test electronic card interconnection in semiconductor test system
IL106890A (en) Method and apparatus for testing integrated circuits

Legal Events

Date Code Title Description
AS Assignment

Owner name: HUGHES ELECTRONICS CORPORATION, CALIFORNIA

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:HE HOLDINGS INC., DBA HUGHES ELECTRONICS, FORMERLY KNOWN AS HUGHES AIRCRAFT COMPANY;REEL/FRAME:008927/0928

Effective date: 19971217

STCF Information on status: patent grant

Free format text: PATENTED CASE

FEPP Fee payment procedure

Free format text: PAYER NUMBER DE-ASSIGNED (ORIGINAL EVENT CODE: RMPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

Free format text: PAYOR NUMBER ASSIGNED (ORIGINAL EVENT CODE: ASPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

FPAY Fee payment

Year of fee payment: 4

REMI Maintenance fee reminder mailed
FPAY Fee payment

Year of fee payment: 8

FPAY Fee payment

Year of fee payment: 12